JP6711838B2 - 静電チャック表面の半径方向外側パッド設計 - Google Patents

静電チャック表面の半径方向外側パッド設計 Download PDF

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Publication number
JP6711838B2
JP6711838B2 JP2017541608A JP2017541608A JP6711838B2 JP 6711838 B2 JP6711838 B2 JP 6711838B2 JP 2017541608 A JP2017541608 A JP 2017541608A JP 2017541608 A JP2017541608 A JP 2017541608A JP 6711838 B2 JP6711838 B2 JP 6711838B2
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Prior art keywords
gas
electrostatic chuck
radially aligned
outer edge
wafer spacing
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Japanese (ja)
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JP2018505561A (ja
JP2018505561A5 (enExample
Inventor
ゴヴィンダ ラジ
ゴヴィンダ ラジ
ロバート ティー ヒラハラ
ロバート ティー ヒラハラ
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2017541608A 2015-02-06 2016-01-06 静電チャック表面の半径方向外側パッド設計 Active JP6711838B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/616,647 2015-02-06
US14/616,647 US20160230269A1 (en) 2015-02-06 2015-02-06 Radially outward pad design for electrostatic chuck surface
PCT/US2016/012362 WO2016126360A1 (en) 2015-02-06 2016-01-06 Radially outward pad design for electrostatic chuck surface

Publications (3)

Publication Number Publication Date
JP2018505561A JP2018505561A (ja) 2018-02-22
JP2018505561A5 JP2018505561A5 (enExample) 2019-02-14
JP6711838B2 true JP6711838B2 (ja) 2020-06-17

Family

ID=56564492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017541608A Active JP6711838B2 (ja) 2015-02-06 2016-01-06 静電チャック表面の半径方向外側パッド設計

Country Status (7)

Country Link
US (1) US20160230269A1 (enExample)
EP (1) EP3254307B1 (enExample)
JP (1) JP6711838B2 (enExample)
KR (1) KR102619126B1 (enExample)
CN (2) CN114686834A (enExample)
TW (1) TWI685916B (enExample)
WO (1) WO2016126360A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9646843B2 (en) * 2014-12-08 2017-05-09 Applied Materials, Inc. Tunable magnetic field to improve uniformity
KR102669903B1 (ko) * 2016-08-30 2024-05-28 주성엔지니어링(주) 기판 처리 장치
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
KR102359591B1 (ko) * 2017-06-16 2022-02-08 주성엔지니어링(주) 진공용 회전 전기 커넥터
JP7208168B2 (ja) 2017-06-16 2023-01-18 チュソン エンジニアリング カンパニー，リミテッド 基板処理装置及び真空回転電気コネクタ
CN108538776B (zh) * 2018-03-29 2021-11-16 北京北方华创微电子装备有限公司 静电卡盘及其制造方法
CN112166497B (zh) 2018-06-22 2021-12-21 应用材料公司 半导体晶片处理中最小化晶片背侧损伤的方法
JP7134826B2 (ja) * 2018-10-11 2022-09-12 東京エレクトロン株式会社 静電チャックの生産方法
CN110158029B (zh) * 2019-07-05 2020-07-17 北京北方华创微电子装备有限公司 掩膜结构和fcva设备
WO2022265882A1 (en) * 2021-06-14 2022-12-22 Lam Research Corporation Frontside and backside pressure monitoring for substrate movement prevention
KR20240042451A (ko) * 2021-08-13 2024-04-02 샤인 테크놀로지스 엘엘씨 이온 및 동위원소 생산과 같은 고진공 응용을 위한 자기 회전 장치
CN120420819A (zh) 2021-10-01 2025-08-05 阳光技术有限责任公司 用于离子收集的方法
CN120435767A (zh) * 2022-10-03 2025-08-05 提升材料德国有限公司 卷材涂布方法及具有集成静电吸附的通风冷却鼓

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646814A (en) * 1994-07-15 1997-07-08 Applied Materials, Inc. Multi-electrode electrostatic chuck
US5825607A (en) * 1996-05-08 1998-10-20 Applied Materials, Inc. Insulated wafer spacing mask for a substrate support chuck and method of fabricating same
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP3859937B2 (ja) * 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
KR100422444B1 (ko) * 2001-05-29 2004-03-12 삼성전자주식회사 정전 척에 설치되는 웨이퍼 공간 지지장치 및 그 제조방법
US6946403B2 (en) * 2003-10-28 2005-09-20 Axcelis Technologies, Inc. Method of making a MEMS electrostatic chuck
US7663860B2 (en) * 2003-12-05 2010-02-16 Tokyo Electron Limited Electrostatic chuck
US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
US8422193B2 (en) * 2006-12-19 2013-04-16 Axcelis Technologies, Inc. Annulus clamping and backside gas cooled electrostatic chuck
KR101526615B1 (ko) * 2007-03-12 2015-06-05 도쿄엘렉트론가부시키가이샤 처리 균일성 제어 방법, 플라즈마 처리 장치 및 기판 국소 변형 방법
US7576018B2 (en) * 2007-03-12 2009-08-18 Tokyo Electron Limited Method for flexing a substrate during processing
US7667944B2 (en) * 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
TWI475594B (zh) * 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
EP2321846A4 (en) * 2008-08-12 2012-03-14 Applied Materials Inc ELECTROSTATIC FODDER ASSEMBLY
US8861170B2 (en) * 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
NL2009189A (en) * 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
KR101784227B1 (ko) * 2013-03-15 2017-10-11 어플라이드 머티어리얼스, 인코포레이티드 정전 척의 수리 및 복원을 위한 방법 및 장치

Also Published As

Publication number Publication date
EP3254307B1 (en) 2022-03-02
TWI685916B (zh) 2020-02-21
JP2018505561A (ja) 2018-02-22
KR20170110712A (ko) 2017-10-11
WO2016126360A1 (en) 2016-08-11
KR102619126B1 (ko) 2023-12-27
TW201637122A (zh) 2016-10-16
CN114686834A (zh) 2022-07-01
EP3254307A1 (en) 2017-12-13
EP3254307A4 (en) 2018-08-15
CN107208261A (zh) 2017-09-26
US20160230269A1 (en) 2016-08-11

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