TWI685916B - 用於靜電夾盤表面之徑向向外的墊設計 - Google Patents

用於靜電夾盤表面之徑向向外的墊設計 Download PDF

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Publication number
TWI685916B
TWI685916B TW105100585A TW105100585A TWI685916B TW I685916 B TWI685916 B TW I685916B TW 105100585 A TW105100585 A TW 105100585A TW 105100585 A TW105100585 A TW 105100585A TW I685916 B TWI685916 B TW I685916B
Authority
TW
Taiwan
Prior art keywords
electrostatic chuck
outer edge
elongated features
chuck assembly
radially aligned
Prior art date
Application number
TW105100585A
Other languages
English (en)
Chinese (zh)
Other versions
TW201637122A (zh
Inventor
瑞吉高芬達
希拉哈拉羅伯Ｔ
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201637122A publication Critical patent/TW201637122A/zh
Application granted granted Critical
Publication of TWI685916B publication Critical patent/TWI685916B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW105100585A 2015-02-06 2016-01-08 用於靜電夾盤表面之徑向向外的墊設計 TWI685916B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/616,647 US20160230269A1 (en) 2015-02-06 2015-02-06 Radially outward pad design for electrostatic chuck surface
US14/616,647 2015-02-06

Publications (2)

Publication Number Publication Date
TW201637122A TW201637122A (zh) 2016-10-16
TWI685916B true TWI685916B (zh) 2020-02-21

Family

ID=56564492

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105100585A TWI685916B (zh) 2015-02-06 2016-01-08 用於靜電夾盤表面之徑向向外的墊設計

Country Status (7)

Country Link
US (1) US20160230269A1 (cg-RX-API-DMAC10.html)
EP (1) EP3254307B1 (cg-RX-API-DMAC10.html)
JP (1) JP6711838B2 (cg-RX-API-DMAC10.html)
KR (1) KR102619126B1 (cg-RX-API-DMAC10.html)
CN (2) CN114686834A (cg-RX-API-DMAC10.html)
TW (1) TWI685916B (cg-RX-API-DMAC10.html)
WO (1) WO2016126360A1 (cg-RX-API-DMAC10.html)

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US9646843B2 (en) * 2014-12-08 2017-05-09 Applied Materials, Inc. Tunable magnetic field to improve uniformity
KR102669903B1 (ko) 2016-08-30 2024-05-28 주성엔지니어링(주) 기판 처리 장치
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
KR102359591B1 (ko) * 2017-06-16 2022-02-08 주성엔지니어링(주) 진공용 회전 전기 커넥터
US11469130B2 (en) 2017-06-16 2022-10-11 Jusung Engineering Co., Ltd. Substrate processing apparatus and rotating electrical connector for vacuum
CN108538776B (zh) * 2018-03-29 2021-11-16 北京北方华创微电子装备有限公司 静电卡盘及其制造方法
JP7737799B2 (ja) * 2018-06-22 2025-09-11 アプライド マテリアルズ インコーポレイテッド 半導体ウェハ処理におけるウェハ裏面損傷を最小化する方法
JP7134826B2 (ja) * 2018-10-11 2022-09-12 東京エレクトロン株式会社 静電チャックの生産方法
CN110158029B (zh) * 2019-07-05 2020-07-17 北京北方华创微电子装备有限公司 掩膜结构和fcva设备
JP2024526539A (ja) * 2021-06-14 2024-07-19 ラム リサーチ コーポレーション 基板の移動を防止するための前面圧力および裏面圧力の監視
CN117836899A (zh) * 2021-08-13 2024-04-05 阳光技术有限责任公司 用于如离子和同位素生产等高真空应用的磁旋转装置
AU2022358410A1 (en) 2021-10-01 2024-04-11 Shine Technologies, Llc Ion production system with fibrous lattice for ion collection
JP2023176711A (ja) * 2022-05-31 2023-12-13 日本特殊陶業株式会社 基板保持部材
WO2024076562A1 (en) * 2022-10-03 2024-04-11 Applied Materials, Inc. Web coating method and vented cooling drum with integral electrostatic clamping
US12600682B2 (en) 2022-11-11 2026-04-14 Applied Materials, Inc. Monolithic substrate support having porous features and methods of forming the same

Citations (5)

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US20020181184A1 (en) * 2001-05-29 2002-12-05 Lee Sun-Young Wafer space supporting apparatus installed on electrostatic chuck and method for fabricating the same
US20050099758A1 (en) * 2003-10-28 2005-05-12 Kellerman Peter L. Method of making a mems electrostatic chuck
US20050207088A1 (en) * 2003-12-05 2005-09-22 Tokyo Electron Limited Electrostatic chuck
US20060002053A1 (en) * 2004-03-31 2006-01-05 Applied Materials, Inc. Detachable electrostatic chuck for supporting a substrate in a process chamber
TW201027661A (en) * 2008-08-12 2010-07-16 Applied Materials Inc Electrostatic chuck assembly

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US5825607A (en) * 1996-05-08 1998-10-20 Applied Materials, Inc. Insulated wafer spacing mask for a substrate support chuck and method of fabricating same
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP3859937B2 (ja) * 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
US8422193B2 (en) * 2006-12-19 2013-04-16 Axcelis Technologies, Inc. Annulus clamping and backside gas cooled electrostatic chuck
WO2008112673A2 (en) * 2007-03-12 2008-09-18 Tokyo Electron Limited Dynamic temperature backside gas control for improved within-substrate processing uniformity
US7576018B2 (en) * 2007-03-12 2009-08-18 Tokyo Electron Limited Method for flexing a substrate during processing
US7667944B2 (en) * 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
TWI475594B (zh) * 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
US8861170B2 (en) * 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
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KR101784227B1 (ko) * 2013-03-15 2017-10-11 어플라이드 머티어리얼스, 인코포레이티드 정전 척의 수리 및 복원을 위한 방법 및 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020181184A1 (en) * 2001-05-29 2002-12-05 Lee Sun-Young Wafer space supporting apparatus installed on electrostatic chuck and method for fabricating the same
US20050099758A1 (en) * 2003-10-28 2005-05-12 Kellerman Peter L. Method of making a mems electrostatic chuck
US20050207088A1 (en) * 2003-12-05 2005-09-22 Tokyo Electron Limited Electrostatic chuck
US20060002053A1 (en) * 2004-03-31 2006-01-05 Applied Materials, Inc. Detachable electrostatic chuck for supporting a substrate in a process chamber
TW201027661A (en) * 2008-08-12 2010-07-16 Applied Materials Inc Electrostatic chuck assembly

Also Published As

Publication number Publication date
US20160230269A1 (en) 2016-08-11
JP6711838B2 (ja) 2020-06-17
WO2016126360A1 (en) 2016-08-11
EP3254307A4 (en) 2018-08-15
CN107208261A (zh) 2017-09-26
KR20170110712A (ko) 2017-10-11
CN114686834A (zh) 2022-07-01
TW201637122A (zh) 2016-10-16
EP3254307A1 (en) 2017-12-13
EP3254307B1 (en) 2022-03-02
KR102619126B1 (ko) 2023-12-27
JP2018505561A (ja) 2018-02-22

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