TWI684250B - Packaging substrate, manufacturing method thereof and semiconductor device - Google Patents

Packaging substrate, manufacturing method thereof and semiconductor device Download PDF

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TWI684250B
TWI684250B TW104123491A TW104123491A TWI684250B TW I684250 B TWI684250 B TW I684250B TW 104123491 A TW104123491 A TW 104123491A TW 104123491 A TW104123491 A TW 104123491A TW I684250 B TWI684250 B TW I684250B
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layer
molded body
conductive layer
package substrate
conductor pattern
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TW201620084A (en
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中川宏史
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日商麥克賽爾控股股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

本發明提供封裝基板及其製造方法以及半導體裝置,在模制體埋設並保持有導電體圖案的封裝基板中,消除導電體圖案從模制體脫落或者產生位置偏移而能夠簡單地進行輸送時、半導體元件的安裝時的操作。導電體圖案(1)由下導電層(6)和上導電層(7)構成。俯視時的下導電層(6)和上導電層(7)的外形形狀形成為任意一方比另一方大。在模制體(2)的上下面的任意一方形成阻止導電體圖案(1)從模制體(2)脫落的阻隔層(11)。阻隔層(11)形成為對從模制體(2)露出的下導電層(6)或者上導電層(7)的一部分進行覆蓋。藉此,由阻隔層(11)阻擋導電體圖案(1),能夠阻止從模制體(2)脫落,從而能簡單地進行封裝基板的操作。 The present invention provides a package substrate, a method of manufacturing the same, and a semiconductor device. In a package substrate in which a molded body is embedded and holds a conductor pattern, when the conductor pattern is removed from the molded body or a positional deviation is generated, it can be easily transported 3. Operation during the mounting of semiconductor components. The conductor pattern (1) is composed of a lower conductive layer (6) and an upper conductive layer (7). The outer shapes of the lower conductive layer (6) and the upper conductive layer (7) in plan view are formed so that either one is larger than the other. A barrier layer (11) that prevents the conductor pattern (1) from coming off the molded body (2) is formed on any one of the upper and lower surfaces of the molded body (2). The barrier layer (11) is formed to cover a part of the lower conductive layer (6) or the upper conductive layer (7) exposed from the molded body (2). Thereby, the conductive pattern (1) is blocked by the barrier layer (11), and it can be prevented from falling off from the molded body (2), so that the operation of packaging the substrate can be easily performed.

Description

封裝基板及其製造方法以及半導體裝置 Packaging substrate, manufacturing method thereof and semiconductor device

本發明涉及導電體圖案埋設並保持於模制體的封裝基板及其製造方法、以及半導體裝置。導電體圖案從模制體的上下面露出。並且,半導體裝置在封裝基板上安裝半導體元件且由密封體密封。 The present invention relates to a package substrate in which a conductor pattern is embedded and held in a molded body, a manufacturing method thereof, and a semiconductor device. The conductor pattern is exposed from above and below the molded body. Furthermore, the semiconductor device mounts the semiconductor element on the package substrate and is sealed by the sealing body.

以封裝基板的輕型化為目的,專利文獻1中公開了一種導電體圖案埋設並保持於模制體的封裝基板,這是公知的。在該專利文獻1的電極封裝體中,具備導電圖案層、和以積層狀一體形成於該導電圖案層的電極層(以下,將一體形成的導電圖案層以及電極層稱作圖案電極層。)。圖案電極層被密封在板狀樹脂(模制體)內,在該板狀樹脂的一個面露出導電圖案層,並在另一個面露出電極層。在電極封裝體的製造中,首先在由不鏽鋼構成的金屬基板上形成與導電圖案層對應的抗蝕劑層,之後利用電鑄而形成導電圖案層。接著,在上述抗蝕劑層以及導電圖案層上,形成與電極層對應的抗蝕劑層,之後利用電鑄而積層形成電極層。再接下來,除去兩抗蝕劑層,以將圖案電極層埋設的方式塗敷樹脂並使之硬化,從而將其密封在板狀樹脂內。最後,切削板狀樹脂的表面,並且從圖案電極層以及板狀樹脂剝離而除去金屬基板,由此製造在上下面分別露出有導電圖案層和電極層的電極封裝體。 For the purpose of reducing the weight of the package substrate, Patent Document 1 discloses a package substrate in which a conductor pattern is embedded and held in a molded body, which is known. The electrode package of Patent Document 1 includes a conductive pattern layer and an electrode layer integrally formed on the conductive pattern layer in a layered manner (hereinafter, the integrally formed conductive pattern layer and electrode layer are referred to as a pattern electrode layer.) . The pattern electrode layer is sealed in a plate-shaped resin (molded body), the conductive pattern layer is exposed on one surface of the plate-shaped resin, and the electrode layer is exposed on the other surface. In the manufacture of the electrode package, first, a resist layer corresponding to the conductive pattern layer is formed on a metal substrate made of stainless steel, and then the conductive pattern layer is formed by electroforming. Next, a resist layer corresponding to the electrode layer is formed on the resist layer and the conductive pattern layer, and then the electrode layer is formed by lamination by electroforming. Next, the two resist layers are removed, and the resin is applied and hardened to embed the pattern electrode layer, thereby sealing it in the plate-shaped resin. Finally, the surface of the plate-shaped resin is cut and peeled from the patterned electrode layer and the plate-shaped resin to remove the metal substrate, thereby manufacturing an electrode package in which the conductive pattern layer and the electrode layer are exposed on the upper and lower surfaces, respectively.

若如專利文獻1的電極封裝體那樣,代替電鑄時使用的金屬 基板,而利用板狀樹脂來保持圖案電極層,則能夠使電極封裝體整體的重量輕型化,而能夠減少半導體裝置的製造商輸送電極封裝體時的成本。並且,在製造商方面,當使用電極封裝體來製造半導體裝置時,能夠省去除去金屬基板的手續,也能夠有助於半導體裝置的製造成本的減少。 If, like the electrode package of Patent Document 1, it replaces the metal used in electroforming The use of a plate-shaped resin to hold the patterned electrode layer on the substrate makes it possible to reduce the weight of the entire electrode package and reduce the cost of the semiconductor device manufacturer when transporting the electrode package. In addition, when manufacturing a semiconductor device using an electrode package, the manufacturer can eliminate the procedure of removing the metal substrate, and can also contribute to a reduction in the manufacturing cost of the semiconductor device.

專利文獻1:日本特開2005-244033號公報(第0014段,圖1) Patent Document 1: Japanese Patent Laid-Open No. 2005-244033 (Paragraph 0014, Fig. 1)

在專利文獻1的電極封裝中,由於用較薄的板狀樹脂來保持圖案電極層,所以例如在輸送時、半導體元件的安裝時,容易在電極封裝產生撓曲、扭轉等變形。並且,若在電極封裝產生變形,則有在圖案電極層與板狀樹脂之間的邊界面產生剝離的擔憂。並且,有圖案電極層從板狀樹脂脫落、或者產生位置偏移的擔憂。通過以不在電極封裝產生撓曲、扭轉的方式慎重地進行處理,能夠防止圖案電極層的脫落等,但這樣的話,輸送時、半導體元件的安裝時的操作變得繁瑣。 In the electrode package of Patent Document 1, since the patterned electrode layer is held by a thin plate-shaped resin, the electrode package is likely to be deformed such as deflection and twisting during transportation or mounting of a semiconductor element. Furthermore, if the electrode package is deformed, there is a possibility that peeling may occur at the boundary surface between the pattern electrode layer and the plate-shaped resin. Furthermore, there is a possibility that the patterned electrode layer may come off from the plate-shaped resin or may be displaced. Careful processing is carried out so as not to cause deflection or twisting of the electrode package, which can prevent the pattern electrode layer from falling off, etc. However, in this case, operations during transportation and mounting of semiconductor elements become cumbersome.

本發明的目的在於提供如下封裝基板及其製造方法、以及半導體裝置:在導電體圖案埋設並保持於模制體的封裝基板中,消除導電體圖案從模制體脫落、或者產生位置偏移的不良,從而能夠簡單地進行輸送時、半導體元件的安裝時的操作。 An object of the present invention is to provide a package substrate, a method for manufacturing the same, and a semiconductor device: in a package substrate in which a conductor pattern is embedded and held in a molded body, the conductor pattern is eliminated from the molded body or the positional deviation occurs Defects make it easy to carry out operations during transportation and when mounting semiconductor elements.

本發明將導電體圖案1以其上下面露出的狀態埋設並保持於模制體2的封裝基板作為對象。其特徵在於,導電體圖案1由下導電層6和積層形成在下導電層6上的上導電層7構成。俯視時的下導電層6和上導電層7的外形形狀形成為任意一方比另一方大。而且,在模制體2的上 面或者下面的任意一方,形成有阻止導電體圖案1從模制體2脫落的阻隔層11。 The present invention is directed to a package substrate in which the conductor pattern 1 is buried and held in the molded body 2 in a state where the upper and lower surfaces are exposed. It is characterized in that the conductor pattern 1 is composed of a lower conductive layer 6 and an upper conductive layer 7 laminated on the lower conductive layer 6. The outer shapes of the lower conductive layer 6 and the upper conductive layer 7 in plan view are formed so that either one is larger than the other. Moreover, on the molded body 2 A barrier layer 11 that prevents the conductive pattern 1 from falling off the molded body 2 is formed on either the surface or the lower surface.

阻隔層11形成為對從模制體2露出的導電體圖案1的下導電層6或者上導電層7的一部分進行覆蓋。 The barrier layer 11 is formed to cover a part of the lower conductive layer 6 or the upper conductive layer 7 of the conductor pattern 1 exposed from the molded body 2.

下導電層6的外形形狀形成為比上導電層7的外形形狀大,在模制體2的下面形成阻隔層11。 The outer shape of the lower conductive layer 6 is formed larger than the outer shape of the upper conductive layer 7, and the barrier layer 11 is formed on the lower surface of the molded body 2.

上導電層7的外形形狀形成為比下導電層6的外形形狀大,在模制體2的上面形成阻隔層11。 The outer shape of the upper conductive layer 7 is formed to be larger than the outer shape of the lower conductive layer 6, and the barrier layer 11 is formed on the upper surface of the molded body 2.

導電體圖案1由電鑄形成,用於形成下導電層6和上導電層7的下抗蝕體18以及上抗蝕體21兼作埋設並保持導電體圖案1的模制體2。 The conductor pattern 1 is formed by electroforming, and the lower resist 18 and the upper resist 21 for forming the lower conductive layer 6 and the upper conductive layer 7 also serve as the molded body 2 in which the conductor pattern 1 is buried and held.

阻隔層11由光硬化型的防焊油墨層26形成。 The barrier layer 11 is formed of a photo-curable solder resist ink layer 26.

並且,本發明是一種封裝基板的製造方法,在模制體2埋設並保持由下導電層6、和積層形成在下導電層6上的上導電層7構成的導電體圖案1,使導電體圖案1在模制體2的上下面露出,在模制體2的上面或者下面的任意一方,形成有阻止導電體圖案1從模制體2脫落的阻隔層11。其特徵在於,包括:一次電鑄步驟,在該步驟中,在平板狀的電鑄母模15的表面形成下抗蝕體18,並在未由下抗蝕體18覆蓋的電鑄母模15的表面形成下導電層6;二次電鑄步驟,在該步驟中,在下導電層6或者下導電層6與下抗蝕體18的表面形成上抗蝕體21,並在未由上抗蝕體21覆蓋的下導電層6或者下導電層6與下抗蝕體18的表面積層形成上導電層7;以及阻隔層形成步驟,在該步驟中,在埋設並保持導電體圖案1的模制體2的上面或者下面中任意一方形成阻隔層11。在阻隔層形成步驟中,在模制體2 的上面或者下面的任意一方形成光硬化型的防焊油墨層26,並通過光刻法以對從模制體2露出的下導電層6或者上導電層7的露出部的一部分進行覆蓋的方式形成阻隔層11。 In addition, the present invention is a method of manufacturing a package substrate in which a conductor pattern 1 composed of a lower conductive layer 6 and an upper conductive layer 7 laminated on the lower conductive layer 6 is buried and held in a molded body 2 to make the conductor pattern 1 is exposed on the upper and lower surfaces of the molded body 2, and either the upper surface or the lower surface of the molded body 2 is formed with a barrier layer 11 that prevents the conductive pattern 1 from falling off from the molded body 2. It is characterized by including an electroforming step in which the lower resist 18 is formed on the surface of the flat electroforming master mold 15 and the electroforming master mold 15 is not covered by the lower resist 18 Forming a lower conductive layer 6 on the surface; a secondary electroforming step in which an upper resist 21 is formed on the surface of the lower conductive layer 6 or the lower conductive layer 6 and the lower resist 18, The lower conductive layer 6 covered by the body 21 or the surface layer of the lower conductive layer 6 and the lower resist 18 forms an upper conductive layer 7; and a barrier layer forming step in which the molding of the conductor pattern 1 is buried and held The barrier layer 11 is formed on either the upper surface or the lower surface of the body 2. In the barrier layer forming step, in the molded body 2 Either the upper or lower surface of the photocurable solder resist ink layer 26 is formed, and a part of the exposed portion of the lower conductive layer 6 or the upper conductive layer 7 exposed from the molded body 2 is covered by photolithography The barrier layer 11 is formed.

在二次電鑄步驟之後進行模制步驟,形成埋設並保持導電體圖案1的模制體2。在模制步驟中,將在一次以及二次電鑄步驟中形成的下抗蝕體以及上抗蝕體18、21除去,並在除去下抗蝕體以及上抗蝕體18、21後的空間,填充軟化的模制樹脂22,使之硬化後形成模制體2。 After the secondary electroforming step, a molding step is performed to form a molded body 2 in which the conductor pattern 1 is buried and held. In the molding step, the lower resist and the upper resist 18, 21 formed in the primary and secondary electroforming steps are removed, and the space after removing the lower resist and the upper resist 18, 21 , The softened molding resin 22 is filled and hardened to form the molded body 2.

在俯視情況下,下導電層6的外形形狀形成為比上導電層7的外形形狀大,並在模制體2的下面形成阻隔層11。在模制步驟與阻隔層形成步驟之間,包括從導電體圖案1以及模制體2剝離並除去電鑄母模15的母模除去步驟。 In a plan view, the outer shape of the lower conductive layer 6 is formed larger than the outer shape of the upper conductive layer 7, and the barrier layer 11 is formed on the lower surface of the molded body 2. Between the molding step and the barrier layer forming step, a master mold removing step of peeling and removing the electroformed master mold 15 from the conductor pattern 1 and the molded body 2 is included.

在俯視情況下,上導電層7的外形形狀形成為比下導電層6的外形形狀大,並在模制體2的上面形成阻隔層11。包括在阻隔層形成步驟之後,從導電體圖案1以及模制體2剝離並除去電鑄母模15的母模除去步驟。 In the plan view, the outer shape of the upper conductive layer 7 is formed larger than the outer shape of the lower conductive layer 6, and the barrier layer 11 is formed on the upper surface of the molded body 2. After the barrier layer forming step, a master mold removing step of peeling and removing the electroformed master mold 15 from the conductor pattern 1 and the molded body 2 is included.

保留在一次以及二次電鑄步驟中形成的下抗蝕體以及上抗蝕體18、21,而兩抗蝕體18、21兼作埋設並保持導電體圖案1的模制體2。 The lower and upper resists 18, 21 formed in the primary and secondary electroforming steps remain, and the two resists 18, 21 also serve as the molded body 2 in which the conductor pattern 1 is buried and held.

並且,本發明是一種在上述的封裝基板構裝有半導體元件S的半導體裝置。導電體圖案1具備外部電極4,在將半導體元件S所具備的電極31和外部電極4電連接後,利用密封體30密封半導體元件S。 Furthermore, the present invention is a semiconductor device in which a semiconductor element S is mounted on the above-mentioned package substrate. The conductor pattern 1 includes an external electrode 4. After the electrode 31 included in the semiconductor element S and the external electrode 4 are electrically connected, the semiconductor element S is sealed with the sealing body 30.

在本發明的封裝基板中,導電體圖案1由下導電層6、和層疊形成在下導電層6上的上導電層7構成,俯視時的下導電層6和上導電 層7的外形形狀形成為任意一方比另一方大。並且,在模制體2的上面或者下面的任意一方,形成有阻止導電體圖案1從模制體2脫落的阻隔層11。這樣,若在模制體2的模制體2的上面或者下面的任意一方形成阻隔層11,則即使在當輸送時、半導體元件的構裝時封裝基板產生撓曲、扭轉等變形的情況下,也能夠利用阻隔層11阻止導電體圖案1從模制體2脫落。因此,可得到能夠消除導電體圖案1從模制體2脫落、或者產生位置偏移而能夠簡單地進行輸送時、半導體元件的安裝時的操作的封裝基板。並且,與設置阻隔層11相應地,提高相對於撓曲、扭轉等變形的抵抗力,從而能夠抑制封裝基板變形。 In the package substrate of the present invention, the conductor pattern 1 is composed of the lower conductive layer 6 and the upper conductive layer 7 laminated on the lower conductive layer 6, and the lower conductive layer 6 and the upper conductive in plan view The outer shape of the layer 7 is formed so that either one is larger than the other. In addition, on either the upper surface or the lower surface of the molded body 2, a barrier layer 11 that prevents the conductive pattern 1 from falling off from the molded body 2 is formed. In this way, if the barrier layer 11 is formed on either one of the upper surface or the lower surface of the molded body 2 of the molded body 2, even when the package substrate is deformed such as deflection, torsion, etc. during transportation or assembly of the semiconductor element It is also possible to use the barrier layer 11 to prevent the conductor pattern 1 from falling out of the molded body 2. Therefore, it is possible to obtain a package substrate that can eliminate the drop of the conductor pattern 1 from the molded body 2 or the positional deviation, and can easily perform the operation at the time of transportation or the mounting of the semiconductor element. In addition, according to the provision of the barrier layer 11, the resistance against deformation such as deflection and torsion is increased, so that the deformation of the package substrate can be suppressed.

若阻隔層11形成為對從模制體2露出的導電體圖案1的下導電層6或者上導電層7的一部分進行覆蓋,則由阻隔層11覆蓋了的部分的下導電層6或者上導電層7被阻隔層11阻擋,而能夠限制導電體圖案1向形成有阻隔層11的一面側移動。 If the barrier layer 11 is formed to cover a part of the lower conductive layer 6 or the upper conductive layer 7 of the conductor pattern 1 exposed from the molded body 2, the portion of the lower conductive layer 6 or the upper conductive covered by the barrier layer 11 The layer 7 is blocked by the barrier layer 11 and can restrict the movement of the conductor pattern 1 to the side where the barrier layer 11 is formed.

若下導電層6的外形形狀形成為比上導電層7的外形形狀大,並在模制體2的下面形成阻隔層11,則由阻隔層11限制導電體圖案1向下導電層6露出的下面側移動,而能夠阻止導電體圖案1從模制體2脫落。 If the outer shape of the lower conductive layer 6 is formed larger than the outer shape of the upper conductive layer 7 and the barrier layer 11 is formed on the lower surface of the molded body 2, the barrier layer 11 restricts the conductor pattern 1 from being exposed to the lower conductive layer 6 The lower side moves, and the conductor pattern 1 can be prevented from falling off from the molded body 2.

若上導電層7的外形形狀形成為比下導電層6的外形形狀大,並在模制體2的上面形成阻隔層11,則由阻隔層11限制導電體圖案1向上導電層7露出的上面側移動,而能夠阻止導電體圖案1從模制體2脫落。 If the outer shape of the upper conductive layer 7 is formed to be larger than the outer shape of the lower conductive layer 6, and the barrier layer 11 is formed on the upper surface of the molded body 2, the upper surface of the conductive pattern 1 exposed to the upper conductive layer 7 is restricted by the barrier layer 11 Side movement, the conductor pattern 1 can be prevented from falling off from the molded body 2.

若用於形成下導電層6以及上導電層7的下抗蝕體以及上抗 蝕體18、21兼作模制體2,則能夠將兩抗蝕體18、21用作埋設並保持導電體圖案1的模制體2。因此,能夠得到不需要另外使導電體圖案1埋設並保持於模制體2而具備阻隔層11的封裝基板,從而能夠減少封裝基板的製造成本。 If the lower resist and upper resist used to form the lower conductive layer 6 and the upper conductive layer 7 The etching bodies 18 and 21 also serve as the molded body 2, and the two resists 18 and 21 can be used as the molded body 2 in which the conductor pattern 1 is buried and held. Therefore, it is possible to obtain a package substrate provided with the barrier layer 11 without separately embedding and holding the conductor pattern 1 in the molded body 2, and it is possible to reduce the manufacturing cost of the package substrate.

若阻隔層11由光硬化型的防焊油墨層26形成,則能夠利用光刻法容易地形成所希望的圖案的阻隔層11,從而能夠進一步減少具備阻隔層11的封裝基板的製造成本。並且,由於與以酚醛樹脂為基礎聚合物的通用光阻相比,防焊油墨層26的構造強度高,所以能夠抑制裂縫、缺口等阻隔層11的破損,而能夠有效地阻止導電體圖案1從模制體2脫落、或者產生位置偏移。 If the barrier layer 11 is formed of a photocurable solder resist ink layer 26, the barrier layer 11 of a desired pattern can be easily formed by photolithography, and the manufacturing cost of a package substrate provided with the barrier layer 11 can be further reduced. Furthermore, since the solder resist ink layer 26 has a higher structural strength than a general-purpose photoresist based on a phenolic resin-based polymer, it is possible to suppress breakage of the barrier layer 11 such as cracks and notches, and to effectively prevent the conductor pattern 1 It falls off from the molded body 2 or shifts in position.

在本發明的製造方法中,包括一次電鑄步驟、二次電鑄步驟、以及阻隔層形成步驟,而形成封裝基板。並且,在阻隔層形成步驟中,在模制體2的上面或者下面的任意一方形成防焊油墨層26,並通過光刻法以對從模制體2露出的下導電層6或者上導電層7的露出部的一部分進行覆蓋的方式形成阻隔層11。這樣,能夠利用與一次以及二次電鑄步驟相同的設備進行曝光、顯影、乾燥等各處理,並且由於能夠容易地形成所希望的圖案的阻隔層11,所以能夠減少具備阻隔層11的封裝基板的製造成本。 The manufacturing method of the present invention includes a primary electroforming step, a secondary electroforming step, and a barrier layer forming step to form a package substrate. In addition, in the barrier layer forming step, the solder resist ink layer 26 is formed on either the upper or lower side of the molded body 2, and the lower conductive layer 6 or the upper conductive layer exposed from the molded body 2 is formed by photolithography The barrier layer 11 is formed so that a part of the exposed portion of 7 is covered. In this way, each process such as exposure, development, and drying can be performed using the same equipment as the primary and secondary electroforming steps, and since the barrier layer 11 of a desired pattern can be easily formed, the package substrate provided with the barrier layer 11 can be reduced Manufacturing costs.

在二次電鑄步驟之後的模制步驟中,將在一次以及二次電鑄步驟中形成的下抗蝕體以及上抗蝕體18、21除去,並在除去下抗蝕體18以及上抗蝕體21後的空間,填充軟化了的模制樹脂22,之後使之硬化而形成了埋設並保持導電體圖案1的模制體2。這樣,通過利用具備所希望的機械強度、材料特性的模制樹脂22來形成模制體2,能夠利用最適於封裝基 板的使用用途的模制體2來埋設並保持導電體圖案1。因此,在封裝基板需要耐熱性的情況下,通過例如在模制樹脂22使用聚對苯二甲酸丁二酯或者聚乙烯等,能夠得到耐熱性優異的封裝基板。並且,通過將模制樹脂22設為與對構裝於封裝基板的半導體元件S進行密封的密封體30與同一或者同系統的樹脂材料,能夠使模制體2與密封體30之間的固定狀態穩固,並且能夠使兩者2、30的熱膨脹率大致相同,從而能夠防止在模制體2與密封體30之間的邊界面產生剝離。 In the molding step after the secondary electroforming step, the lower resist and the upper resist 18, 21 formed in the primary and secondary electroforming steps are removed, and the lower resist 18 and the upper resist are removed The space after the etching body 21 is filled with the softened molding resin 22 and then hardened to form the molded body 2 in which the conductor pattern 1 is buried and held. In this way, by forming the molded body 2 using the molded resin 22 having desired mechanical strength and material characteristics, the most suitable encapsulation base can be used The molded body 2 for the use of the board embeds and holds the conductor pattern 1. Therefore, when heat resistance is required for the package substrate, for example, by using polybutylene terephthalate, polyethylene, or the like for the mold resin 22, a package substrate excellent in heat resistance can be obtained. In addition, by setting the molded resin 22 to the same or the same system resin material as the sealing body 30 that seals the semiconductor element S mounted on the package substrate, it is possible to fix the molding body 2 and the sealing body 30 The state is stable, and the thermal expansion coefficients of the two 2 and 30 can be made substantially the same, thereby preventing peeling at the boundary surface between the molded body 2 and the sealing body 30.

在俯視情況下,下導電層6的外形形狀形成為比上導電層7的外形形狀大,並在模制體2的下面形成有阻隔層11。並且,在模制步驟與阻隔層形成步驟之間包括從導電體圖案1以及模制體2剝離並除去電鑄母模15的母模除去步驟。這樣,由於導電體圖案1以及模制體2形成於電鑄母模15上,所以能夠使除去電鑄母模15後的下導電層6的露出面以及模制體2的下面成為平滑的一個面。因此,作為進行阻隔層形成步驟的前處理不需要進行研磨處理等,從而能夠減少封裝基板的製造成本。 In the plan view, the outer shape of the lower conductive layer 6 is formed larger than the outer shape of the upper conductive layer 7, and the barrier layer 11 is formed on the lower surface of the molded body 2. In addition, between the molding step and the barrier layer forming step, a master mold removing step of peeling and removing the electroformed master mold 15 from the conductor pattern 1 and the molded body 2 is included. In this way, since the conductive pattern 1 and the molded body 2 are formed on the electroformed master mold 15, the exposed surface of the lower conductive layer 6 and the lower surface of the molded body 2 after removing the electroformed master mold 15 can be smoothed surface. Therefore, it is not necessary to perform a polishing process or the like as a pre-processing for performing the barrier layer forming step, so that the manufacturing cost of the package substrate can be reduced.

在俯視情況下,上導電層7的外形形狀形成為比下導電層6的外形形狀大,並在模制體2的上面形成有阻隔層11。並且,包括在阻隔層形成步驟之後,從導電體圖案1以及模制體2剝離並除去電鑄母模15的母模除去步驟。這樣,由於在經由了阻隔層形成步驟後的最終步驟中剝離並除去電鑄母模15,所以在封裝基板的製造過程中,能夠在由電鑄母模15可靠地支承的狀態下製造導電體圖案1以及模制體2,從而能夠在穩定的狀態下製造封裝基板。 In the plan view, the outer shape of the upper conductive layer 7 is formed to be larger than the outer shape of the lower conductive layer 6, and the barrier layer 11 is formed on the upper surface of the molded body 2. In addition, after the barrier layer forming step, a master mold removing step of peeling and removing the electroformed master mold 15 from the conductor pattern 1 and the molded body 2 is included. In this way, since the electroforming master mold 15 is peeled off and removed in the final step after passing through the barrier layer forming step, during the manufacturing process of the package substrate, the electrical conductor can be manufactured while being reliably supported by the electroforming master mold 15 The pattern 1 and the molded body 2 can manufacture a package substrate in a stable state.

保留在一次以及二次電鑄步驟中形成的下抗蝕體18以及上 抗蝕體21,而兩抗蝕體18、21兼作埋設並保持導電體圖案1的模制體2。這樣,不需要另外形成模制體2,而能夠省略形成模制體2的步驟,從而相應地能夠進一步減少封裝基板的製造成本。 Retain the lower resist 18 and the upper formed in the primary and secondary electroforming steps The resist 21, and the two resists 18, 21 also serve as the molded body 2 in which the conductor pattern 1 is buried and held. In this way, it is not necessary to separately form the molded body 2, and the step of forming the molded body 2 can be omitted, and accordingly the manufacturing cost of the package substrate can be further reduced.

在上述的封裝基板安裝有半導體元件S的半導體裝置中,在將導電體圖案1所具備的外部電極4和半導體元件S所具備的電極31電連接之後,利用密封體30密封了半導體元件S。這樣,在外部電極4與電極31之間的連接作業、以及利用密封體30進行的密封作業時,假使封裝基板產生了撓曲、扭轉的變形,導電體圖案1也不會從模制體2脫落、或者產生位置偏移,從而能夠簡單地進行上述作業時的封裝基板的操作。並且,能夠減少半導體裝置的製造時的不良品形成率,而提高半導體裝置的生產率。 In the above-described semiconductor device on which the semiconductor element S is mounted on the package substrate, after the external electrode 4 included in the conductor pattern 1 and the electrode 31 included in the semiconductor element S are electrically connected, the semiconductor element S is sealed with the sealing body 30. In this way, during the connection operation between the external electrode 4 and the electrode 31 and the sealing operation by the sealing body 30, even if the package substrate is deformed by bending or twisting, the conductor pattern 1 will not be removed from the molded body 2 The detachment or positional deviation can easily perform the operation of the package substrate during the above-mentioned work. Furthermore, it is possible to reduce the defective product formation rate at the time of manufacturing the semiconductor device, and to improve the productivity of the semiconductor device.

1‧‧‧導電體圖案 1‧‧‧Conductor pattern

3‧‧‧模制體 3‧‧‧Molded body

4‧‧‧外部電極 4‧‧‧External electrode

6‧‧‧下導電層(第一電鑄層) 6‧‧‧Lower conductive layer (first electroformed layer)

7‧‧‧上導電層(第二電鑄層) 7‧‧‧ Upper conductive layer (second electroformed layer)

11‧‧‧阻隔層 11‧‧‧ Barrier layer

15‧‧‧電鑄母模 15‧‧‧Electric casting master

18‧‧‧下抗蝕體(第一抗蝕體) 18‧‧‧ Lower resist (first resist)

21‧‧‧上抗蝕體(第二抗蝕體) 21‧‧‧upper resist (second resist)

22‧‧‧模制樹脂 22‧‧‧Moulded resin

26‧‧‧防焊油墨層 26‧‧‧ Solder resist ink layer

30‧‧‧密封體 30‧‧‧sealing body

31‧‧‧電極 31‧‧‧electrode

S‧‧‧半導體元件 S‧‧‧Semiconductor components

W‧‧‧金屬線 W‧‧‧Metal wire

圖1係本發明的第一實施方式的封裝基板的縱剖側視圖。 FIG. 1 is a longitudinal sectional side view of a package substrate according to a first embodiment of the present invention.

圖2係第一實施方式的封裝基板的局部俯視圖。 2 is a partial plan view of the package substrate of the first embodiment.

圖3係表示第一實施方式的封裝基板的製造方法中的一次電鑄步驟的說明圖。 3 is an explanatory diagram showing a primary electroforming step in the method for manufacturing a package substrate of the first embodiment.

圖4係表示第一實施方式的封裝基板的製造方法中的二次電鑄步驟的說明圖。 4 is an explanatory diagram showing a secondary electroforming step in the method of manufacturing a package substrate of the first embodiment.

圖5係表示第一實施方式的封裝基板的製造方法中的模制步驟以及母模除去步驟的說明圖。 5 is an explanatory diagram showing a molding step and a master mold removal step in the method of manufacturing a package substrate of the first embodiment.

圖6係表示第一實施方式的封裝基板的製造步驟中的阻隔層形成步驟 的說明圖。 FIG. 6 shows a step of forming a barrier layer in the manufacturing step of the package substrate of the first embodiment Illustration.

圖7係第一實施方式的半導體裝置的縱剖側視圖。 7 is a longitudinal sectional side view of the semiconductor device of the first embodiment.

圖8係第一實施方式的半導體裝置的立體圖。 8 is a perspective view of the semiconductor device of the first embodiment.

圖9係表示第一實施方式的半導體裝置的製造方法的說明圖。 9 is an explanatory diagram showing the method of manufacturing the semiconductor device according to the first embodiment.

圖10係用於說明第一實施方式的半導體裝置的製造方法的局部俯視圖。 10 is a partial plan view for explaining the method of manufacturing the semiconductor device of the first embodiment.

圖11係本發明的第二實施方式的封裝基板的縱剖側視圖。 11 is a longitudinal sectional side view of a package substrate according to a second embodiment of the present invention.

圖12係表示第二實施方式的封裝基板的製造方法中的母模除去步驟以及阻隔層形成步驟的說明圖。 FIG. 12 is an explanatory diagram showing a master mold removing step and a barrier layer forming step in the method of manufacturing a package substrate according to the second embodiment.

圖13係本發明的第三實施方式的封裝基板的縱剖側視圖。 13 is a longitudinal side view of a package substrate according to a third embodiment of the present invention.

圖14係表示第三實施方式的封裝基板的製造方法中的一次電鑄步驟的說明圖。 14 is an explanatory diagram showing a primary electroforming step in the method of manufacturing a package substrate of the third embodiment.

圖15係表示第三實施方式的封裝基板的製造方法中的二次電鑄步驟的說明圖。 15 is an explanatory diagram showing a secondary electroforming step in the method of manufacturing a package substrate of the third embodiment.

圖16係表示第三實施方式的封裝基板的製造方法中的模制步驟、阻隔層形成步驟以及母模除去步驟的說明圖。 16 is an explanatory diagram showing a molding step, a barrier layer forming step, and a master mold removing step in the method of manufacturing a package substrate of the third embodiment.

圖17係本發明的第四實施方式的封裝基板的縱剖側視圖。 17 is a longitudinal sectional side view of a package substrate according to a fourth embodiment of the present invention.

圖18係表示第四實施方式的封裝基板的製造方法中的阻隔層形成步驟以及母模除去的說明圖。 FIG. 18 is an explanatory diagram showing the steps of forming the barrier layer and the removal of the master mold in the method of manufacturing the package substrate of the fourth embodiment.

(第一實施方式) (First embodiment)

圖1至圖10中表示本發明的封裝基板及其製造方法、以及半導體裝置 的第一實施方式。如圖1以及圖2所示,封裝基板的導電體圖案1埋設並保持於模制體2,導電體圖案1通過電鑄法形成,並且在模制體2的上下面露出。導電體圖案1利用供半導體元件S載置的安裝墊3、和配置於安裝墊3的兩側的六個外部電極4而作為一組單位圖案構成,在模制體2,矩陣狀地配置有多個單位圖案。 1 to 10 show the package substrate of the present invention, its manufacturing method, and semiconductor device The first embodiment. As shown in FIGS. 1 and 2, the conductive pattern 1 of the package substrate is buried and held in the molded body 2, and the conductive pattern 1 is formed by electroforming and exposed above and below the molded body 2. The conductor pattern 1 is composed of a mounting pad 3 on which the semiconductor element S is mounted, and six external electrodes 4 arranged on both sides of the mounting pad 3 as a set of unit patterns. The molded body 2 is arranged in a matrix Multiple unit patterns.

導電體圖案1由電鑄時在不銹鋼或者鋁等具有導電性的電鑄母模15上形成的第一電鑄層(下導電層)6、和在第一電鑄層6上積層形成的第二電鑄層(上導電層)7構成,第一電鑄層6的外形形狀形成為比第二電鑄層7的外形形狀大。第二電鑄層7由基層8、和試圖提升焊錫或者金屬線W的粘結性的表面層9構成。第一電鑄層6以及第二電鑄層7的基層8能夠由鎳、鎳-鈷合金或者銅形成。並且,第二電鑄層7的表面層9能夠由貴金屬形成,能夠由金或者金-鈀合金等形成。第二電鑄層7構成了安裝墊3以及外部電極4的、半導體元件S的構裝面側。 The conductor pattern 1 is composed of a first electroformed layer (lower conductive layer) 6 formed on a conductive electroforming master mold 15 such as stainless steel or aluminum during electroforming, and a first electroformed layer formed on the first electroformed layer 6 The second electroformed layer (upper conductive layer) 7 is configured, and the outer shape of the first electroformed layer 6 is formed to be larger than the outer shape of the second electroformed layer 7. The second electroformed layer 7 is composed of a base layer 8 and a surface layer 9 that attempts to improve the adhesion of solder or metal wires W. The base layer 8 of the first electroformed layer 6 and the second electroformed layer 7 can be formed of nickel, nickel-cobalt alloy, or copper. In addition, the surface layer 9 of the second electroformed layer 7 can be formed of a precious metal, and can be formed of gold, gold-palladium alloy, or the like. The second electroformed layer 7 constitutes the mounting surface of the semiconductor element S on the mounting pad 3 and the external electrode 4.

當在埋設並保持於模制體2的導電體圖案1與模制體2之間的邊界面產生剝離的情況下,導電體圖案1因第一電鑄層6被模制體2阻擋,而不會朝第二電鑄層7露出的上面側(朝向圖1看的上方)移動。但是,由於沒有限制導電體圖案1朝第一電鑄層6露出的下面側(朝向圖1看的下向)的移動的手段,所以有導電體圖案1從模制體2脫落、或者產生位置偏移的擔憂。這樣,為了阻止導電體圖案1從模制體2脫落、或者產生位置偏移,而在模制體2的下面形成了阻隔層11。 When peeling occurs at the boundary surface between the conductor pattern 1 embedded in the molded body 2 and the molded body 2, the conductive pattern 1 is blocked by the molded body 2 due to the first electroformed layer 6, and It does not move toward the upper surface side of the second electroformed layer 7 exposed (toward the upper side as viewed in FIG. 1 ). However, since there is no means for restricting the movement of the conductor pattern 1 toward the lower side of the exposed surface of the first electroformed layer 6 (downwardly as viewed in FIG. 1 ), the conductor pattern 1 falls off from the molded body 2 or there is a position Worry about deviation. In this way, in order to prevent the conductor pattern 1 from falling off from the molded body 2 or from being displaced, a barrier layer 11 is formed on the lower surface of the molded body 2.

阻隔層11形成為對從模制體2露出了的第一電鑄層6的一部分進行覆蓋。具體而言,在阻隔層11開口有使第一電鑄層6露出的窗12, 窗12形成為比構成安裝墊3以及外部電極4的第一電鑄層6的外形形狀小一圈。由此,導電體圖案1因第一電鑄層6的外緣部被阻隔層11的窗12的周緣部阻擋,而朝從模制體2分離(脫落)的方向的移動受到限制。阻隔層11使用光硬化型的防焊油墨層26而以光刻法形成。在與窗12相對的第一電鑄層6的表面,形成有試圖提升焊錫或者金屬線W的粘結性的表面層13。表面層13能夠由貴金屬形成,能夠由金或者金-鈀合金等形成。 The barrier layer 11 is formed to cover a part of the first electroformed layer 6 exposed from the molded body 2. Specifically, a window 12 exposing the first electroformed layer 6 is opened in the barrier layer 11, The window 12 is formed to be smaller than the outer shape of the first electroformed layer 6 constituting the mounting pad 3 and the external electrode 4. As a result, the outer edge of the first electroformed layer 6 is blocked by the peripheral edge of the window 12 of the barrier layer 11, and the movement of the conductive pattern 1 in the direction of separation (falling off) from the molded body 2 is restricted. The barrier layer 11 is formed by a photolithography method using a photo-curable solder resist ink layer 26. On the surface of the first electroformed layer 6 opposed to the window 12, a surface layer 13 that attempts to improve the adhesion of solder or metal wires W is formed. The surface layer 13 can be formed of a precious metal, and can be formed of gold, gold-palladium alloy, or the like.

圖3至圖6中表示本實施方式的封裝基板的製造方法。封裝基板經由圖3(a)~圖3(d)所示的一次電鑄步驟、圖4(a)~圖4(d)所示的二次電鑄步驟、圖5(a)~圖5(b)所示的模制步驟、圖5(c)所示的母模除去步驟以及圖6(a)~圖6(c)所示的阻隔層形成步驟而形成。封裝基板的製造使用具有導電性的平板狀的不銹鋼製的電鑄母模15來進行。 3 to 6 show a method of manufacturing the package substrate of this embodiment. The package substrate passes through the primary electroforming steps shown in FIGS. 3(a) to 3(d), the secondary electroforming steps shown in FIGS. 4(a) to 4(d), and FIGS. 5(a) to 5 It is formed by the molding process shown in (b), the master mold removal process shown in FIG. 5(c), and the barrier layer forming process shown in FIGS. 6(a) to 6(c). The manufacturing of the package substrate is performed using a conductive flat-plate stainless steel electroforming master mold 15.

在一次電鑄步驟中,如圖3(a)所示,在電鑄母模15的上面形成第一光阻層16,之後在該第一光阻層16的上面,載置且緊貼具有與第一電鑄層6對應的透光孔的第一圖案薄膜17。接下來,用紫外線光燈照射紫外線光來進行曝光,並進行顯影、乾燥的各處理,溶解除去未曝光部分,由此如圖3(b)所示地在電鑄母模15上形成與第一電鑄層6對應的第一抗蝕體(下抗蝕體)18。此外,第一光阻層16使用與規定的高度對照地利用熱壓將一片或多片鹼顯影、負顯的感光性抗蝕乾膜層壓而形成後的光阻層。例如,能夠使用將酚醛樹脂作為基礎聚合物的通用抗蝕劑。 In one electroforming step, as shown in FIG. 3(a), a first photoresist layer 16 is formed on the electroforming mother mold 15, and then on the first photoresist layer 16, it is placed and closely attached to the The first pattern film 17 of the light transmission hole corresponding to the first electroformed layer 6. Next, ultraviolet light is irradiated with an ultraviolet light lamp to perform exposure, and each process of development and drying is performed to dissolve and remove the unexposed portion, thereby forming the first and the third on the electroforming master mold 15 as shown in FIG. 3(b). A first resist (lower resist) 18 corresponding to an electroformed layer 6. In addition, as the first photoresist layer 16, a photoresist layer formed by laminating one or more alkali-developed and negatively developed photosensitive resist dry films by hot pressing against a predetermined height is used. For example, a general-purpose resist using phenol resin as a base polymer can be used.

接下來,如圖3(c)所示,通過利用電鑄法使作為電鑄金屬的鎳電沉積在除第一抗蝕體18以外的電鑄母模15上,來形成第一電鑄層6。在形成第一電鑄層6之後,透過對第一抗蝕體18以及第一電鑄層6的表 面進行研磨,由此如圖3(d)所示地使第一抗蝕體18以及第一電鑄層6的表面成為一個面。 Next, as shown in FIG. 3(c), a first electroformed layer is formed by electrodepositing nickel as an electroformed metal on the electroformed master mold 15 other than the first resist 18 by electroforming 6. After forming the first electroformed layer 6, the surface of the first resist 18 and the first electroformed layer 6 By polishing the surface, the surfaces of the first resist 18 and the first electroformed layer 6 become one surface as shown in FIG. 3(d).

在二次電鑄步驟中,如圖4(a)所示,在第一電鑄層6以及第一抗蝕體18的上面形成第二光阻層19,之後在該第二光阻層19的上面,載置且緊貼具有與第二電鑄層7對應的透光孔的第二圖案薄膜20,其中,第二電鑄層7的外形形狀比第一電鑄層6的外形形狀小。接下來,用紫外線光燈照射紫外線光來進行曝光,並進行顯影、乾燥的各處理,溶解除去未曝光部分,由此如圖4(b)所示地在第一電鑄層6以及第一抗蝕體18上形成與第二電鑄層7對應的第二抗蝕體(上抗蝕體)21。此外,第二光阻層19與第一光阻層16相同,使用與規定的高度對照地利用熱壓將一片或多片鹼顯影、負顯的感光性抗蝕乾膜層壓而形成後的光阻層。例如,能夠使用將酚醛樹脂作為基礎聚合物的通用抗蝕劑。 In the secondary electroforming step, as shown in FIG. 4(a), a second photoresist layer 19 is formed on the first electroformed layer 6 and the first resist 18, and then on the second photoresist layer 19 Above, the second pattern film 20 having light-transmitting holes corresponding to the second electroformed layer 7 is placed and closely adhered to, wherein the outer shape of the second electroformed layer 7 is smaller than that of the first electroformed layer 6 . Next, the ultraviolet light is irradiated with ultraviolet light to expose, and each process of development and drying is carried out to dissolve and remove the unexposed portion, thereby forming the first electroformed layer 6 and the first as shown in FIG. 4(b). A second resist (upper resist) 21 corresponding to the second electroformed layer 7 is formed on the resist 18. In addition, the second photoresist layer 19 is the same as the first photoresist layer 16, and is formed by laminating one or more alkali-developed and negatively-developed photosensitive resist dry films by hot pressing with a predetermined height. Photoresist layer. For example, a general-purpose resist using phenol resin as a base polymer can be used.

接下來,如圖4(c)所示,通過利用電鑄法使作為電鑄金屬的鎳電沉積在除第二抗蝕體21以外的第一電鑄層6上,來積層形成第二電鑄層7的基層8。之後,透過對第二抗蝕體21以及基層8的表面進行研磨,來如圖4(d)所示地使第二抗蝕體21以及第二電鑄層7的表面成為一個面。此外,在基層8的厚度尺寸比第二抗蝕體21的厚度尺寸小的情況下,也能夠省去研磨步驟。進行了研磨步驟後,透過使金電沉積在基層8上,來積層形成第二電鑄層7的表面層9(參照圖1)。 Next, as shown in FIG. 4(c), by electroforming nickel as an electroforming metal on the first electroforming layer 6 other than the second resist 21, a second electrode is formed by lamination The base layer 8 of the casting layer 7. Thereafter, by polishing the surfaces of the second resist 21 and the base layer 8, as shown in FIG. 4( d ), the surfaces of the second resist 21 and the second electroformed layer 7 become one surface. In addition, in the case where the thickness dimension of the base layer 8 is smaller than the thickness dimension of the second resist 21, the polishing step can also be omitted. After the polishing step, gold is electrodeposited on the base layer 8 to form a surface layer 9 of the second electroformed layer 7 (see FIG. 1 ).

在模制步驟中,如圖5(a)所示,將在一次以及二次電鑄步驟中形成的第一抗蝕體18和第二抗蝕體21溶解除去,並在除去兩者18、21後的空間填充由軟化的熱塑性的環氧樹脂構成的模制樹脂22,之後使之 硬化,從而如圖5(b)所示地形成模制體2。當填充模制樹脂22時,以與電鑄母模15對置的方式配置金屬模具而將除去兩抗蝕體18、21後的空間作為空腔,之後嚮導電體圖案1間填充模制樹脂22並使之硬化,但對此未圖示。在金屬模具的與模制樹脂22接觸的接觸面粘貼有鐵氟龍薄片。由此,當拆下金屬模具時,能夠防止在金屬模具附著模制樹脂22。並且,能夠使模制體2的上面與第二電鑄層7的上面形成為一個面,另外,能夠防止模制樹脂22在第二電鑄層7的上面硬化。假使在模制樹脂22附著於第二電鑄層7的上面的情況下,在硬化後研磨而除去模制體2以及第二電鑄層7的表面即可。 In the molding step, as shown in FIG. 5(a), the first resist 18 and the second resist 21 formed in the primary and secondary electroforming steps are dissolved and removed, and both are removed 18, The space after 21 is filled with molding resin 22 made of softened thermoplastic epoxy resin, and then made It is hardened to form the molded body 2 as shown in FIG. 5(b). When the molding resin 22 is filled, a metal mold is arranged so as to face the electroforming mother mold 15 and the space after removing both resists 18 and 21 is used as a cavity, and then the molding resin is filled between the conductor patterns 1 22 and harden it, but this is not shown. A Teflon sheet is attached to the contact surface of the metal mold that contacts the molding resin 22. Thereby, when the metal mold is removed, it is possible to prevent the mold resin 22 from adhering to the metal mold. In addition, the upper surface of the molded body 2 and the upper surface of the second electroformed layer 7 can be formed as one surface, and the molding resin 22 can be prevented from hardening on the upper surface of the second electroformed layer 7. If the molding resin 22 is attached to the upper surface of the second electroformed layer 7, the surface of the molded body 2 and the second electroformed layer 7 may be removed by grinding after hardening.

在母模除去步驟中,強制性地從導電體圖案1(第一電鑄層6)以及模制體2(模制樹脂22)剝離並除去電鑄母模15。由此,得到了圖5(c)所示的導電體圖案1埋設並保持於模制體2的封裝基板。 In the master mold removal step, the electroformed master mold 15 is forcibly peeled off from the conductor pattern 1 (first electroformed layer 6) and the molded body 2 (molded resin 22). Thereby, a package substrate in which the conductor pattern 1 shown in FIG. 5(c) is buried and held in the molded body 2 is obtained.

在阻隔層形成步驟中,如圖6(a)所示,將在母模除去步驟中得到的封裝基板上下反轉,在第一電鑄層6以及模制體2的上面形成防焊油墨層26,並且在該防焊油墨層26的上面載置並緊貼第三圖案薄膜27,該第三圖案薄膜27具有與外形形狀比第一電鑄層6的外形形狀小一圈的窗12對應的透光孔。接下來,用紫外線光燈照射紫外線光而進行曝光,並進行顯影、乾燥的各處理,溶解除去未曝光部分,由此如圖6(b)所示地在第一電鑄層6以及模制體2上形成阻隔層11,在該阻隔層11形成有窗12。此外,防焊油墨層26使用了通過與規定的高度對照地利用熱壓將一片或多片鹼顯影、負顯的感光性阻焊的乾膜層壓而形成後的防焊油墨層。最後,在與窗12相對的第一電鑄層6的露出面,通過無電鍍形成有由金構成 的表面層13,之後將其上下反轉,從而得到了具備圖6(c)所示的阻隔層11的封裝基板。 In the barrier layer forming step, as shown in FIG. 6(a), the packaging substrate obtained in the master mold removal step is turned upside down to form a solder resist ink layer on the first electroformed layer 6 and the molded body 2 26, and a third pattern film 27 is placed on and closely attached to the solder resist ink layer 26, and the third pattern film 27 has a window 12 corresponding to the outer shape of the first electroformed layer 6 which is slightly smaller than the outer shape Light hole. Next, the ultraviolet light is irradiated with an ultraviolet light to expose, and each process of development and drying is carried out to dissolve and remove the unexposed portion, thereby forming the first electroforming layer 6 and molding as shown in FIG. 6(b) A barrier layer 11 is formed on the body 2, and a window 12 is formed on the barrier layer 11. In addition, the solder resist ink layer 26 is a solder resist ink layer formed by laminating one or more alkali-developed dry films of photosensitive solder resist with negative development by hot pressing against a predetermined height. Finally, the exposed surface of the first electroformed layer 6 opposite to the window 12 is formed of gold by electroless plating The surface layer 13 is then inverted upside down to obtain a package substrate provided with the barrier layer 11 shown in FIG. 6(c).

圖7以及圖8中,表示在封裝基板安裝有半導體元件S的半導體裝置。如圖7所示,半導體裝置通過利用由環氧樹脂構成的密封體30對在封裝基板所具有的導電體圖案1的單位圖案上安裝的半導體元件S進行密封而成。將半導體元件S安裝於阻隔層11的相反面側的封裝基板表面,並將其粘合地固定在安裝墊3上,通過用金屬線W將形成於半導體元件S的上面的電極31和外部電極4電連接,來安裝於封裝基板。密封體30密封狀地對這些半導體元件S以及金屬線W等進行密封,半導體裝置整體形成為四邊形塊狀,從與底面側相對的窗12露出有形成於第一電鑄層6的表面的表面層13(參照圖8)。 7 and 8 show a semiconductor device in which a semiconductor element S is mounted on a package substrate. As shown in FIG. 7, the semiconductor device is formed by sealing the semiconductor element S mounted on the unit pattern of the conductor pattern 1 included in the package substrate with a sealing body 30 made of epoxy resin. The semiconductor element S is mounted on the surface of the package substrate on the opposite side of the barrier layer 11 and is adhesively fixed to the mounting pad 3, and the electrode 31 and the external electrode formed on the upper surface of the semiconductor element S are formed with a metal wire W 4 Electrically connected to be mounted on the package substrate. The sealing body 30 hermetically seals the semiconductor elements S, the metal wires W, and the like. The entire semiconductor device is formed in a quadrangular block shape, and the surface formed on the surface of the first electroformed layer 6 is exposed from the window 12 opposite to the bottom surface side. Layer 13 (refer to FIG. 8).

圖9以及圖10中表示本實施方式的半導體裝置的製造方法。如圖9(a)所示,將半導體元件S粘合安裝於安裝墊3上,之後如圖9(b)所示,使用由金構成的金屬線W而利用引線接合裝置將半導體元件S上的電極31和與其對應的外部電極4之間進行連結。此時,由於用表面層9提高了金屬線W的粘結性,所以能夠減少製造步驟時的不良品形成率。此外,電極31與外部電極4之間的連接並不限定於使用金屬線W的引線接合,能夠通過使用了焊錫等的倒裝晶片接合來進行電連接。 9 and 10 show a method of manufacturing the semiconductor device of this embodiment. As shown in FIG. 9(a), the semiconductor element S is bonded and mounted on the mounting pad 3, and then as shown in FIG. 9(b), the metal element W made of gold is used to mount the semiconductor element S on the semiconductor element S using a wire bonding device Electrode 31 and the corresponding external electrode 4 are connected. At this time, since the surface layer 9 improves the adhesiveness of the metal wire W, it is possible to reduce the defective product formation rate during the manufacturing process. In addition, the connection between the electrode 31 and the external electrode 4 is not limited to wire bonding using the metal wire W, and can be electrically connected by flip chip bonding using solder or the like.

接下來,如圖9(c)所示地用熱塑性環氧樹脂密封封裝基板上的半導體元件S的安裝部分,從而在封裝基板上形成密封體30。具體而言,將封裝基板作為母模,在封裝基板的上側安裝模制金屬模具(公模)而形成空腔,並向空腔內壓入軟化的熱塑性的環氧樹脂,並使之硬化。由 此,得到了多個半導體元件S由密封體30密封了的形態下的半導體裝置的集合體,其中,半導體元件S在封裝基板安裝有形成為矩陣狀的單位圖案。最後,通過沿如圖9(c)、圖10中一點鏈線所示的分割線進行切割,從而得到了圖7所示的半導體裝置。 Next, as shown in FIG. 9(c), the mounting portion of the semiconductor element S on the packaging substrate is sealed with a thermoplastic epoxy resin, thereby forming a sealing body 30 on the packaging substrate. Specifically, using the package substrate as a master mold, a mold metal mold (male mold) is mounted on the upper side of the package substrate to form a cavity, and the softened thermoplastic epoxy resin is pressed into the cavity and hardened. by In this way, an aggregate of semiconductor devices in a form in which a plurality of semiconductor elements S are sealed by the sealing body 30 is obtained, wherein the semiconductor elements S are mounted with a unit pattern formed in a matrix on the package substrate. Finally, the semiconductor device shown in FIG. 7 is obtained by cutting along a dividing line indicated by a chain line in FIG. 9(c) and FIG. 10.

如上述那樣,在本實施方式的封裝基板中,由於將阻隔層11形成為對從模制體2露出的第一電鑄層6的外緣部進行覆蓋,所以能夠利用窗12的周緣部的阻隔層11來阻擋第一電鑄層6而限制導電體圖案1的移動。 As described above, in the package substrate of the present embodiment, since the barrier layer 11 is formed to cover the outer edge portion of the first electroformed layer 6 exposed from the molded body 2, the peripheral edge portion of the window 12 can be used The barrier layer 11 blocks the first electroformed layer 6 and restricts the movement of the conductor pattern 1.

由於將第一電鑄層6的外形形狀形成為比第二電鑄層7的外形形狀大,且在模制體2的下面形成有阻隔層11,所以未由模制體2限制移動的導電體圖案1向第一電鑄層6露出的下面側的移動能夠由阻隔層11限制。因此,能夠利用阻隔層11阻止導電體圖案1從模制體2脫落。並且,在通過電鑄法形成第二電鑄層7時,亦可只使陰極側的電極的第一電鑄層6上的電鑄層增長,所以與形成具有比第一電鑄層6的外形形狀大的外形形狀的第二電鑄層7的情況相比,能夠減少形成第二電鑄層7時的陽極側的金屬電極的消耗量,並且能夠縮短電鑄時間,相應地能夠減少封裝基板的製造成本。 Since the outer shape of the first electroformed layer 6 is formed to be larger than the outer shape of the second electroformed layer 7, and the barrier layer 11 is formed on the lower surface of the molded body 2, the conductive body that is not restricted by the molded body 2 is moved The movement of the volume pattern 1 to the lower surface side where the first electroformed layer 6 is exposed can be restricted by the barrier layer 11. Therefore, the barrier layer 11 can prevent the conductor pattern 1 from falling off from the molded body 2. Furthermore, when the second electroformed layer 7 is formed by electroforming, only the electroformed layer on the first electroformed layer 6 of the electrode on the cathode side can be grown. Compared with the case of the second electroformed layer 7 having a large external shape, the consumption of the metal electrode on the anode side when forming the second electroformed layer 7 can be reduced, and the electroforming time can be shortened, and accordingly the package can be reduced. The manufacturing cost of the substrate.

並且,在本實施方式的封裝基板的製造方法中,在二次電鑄步驟之後的模制步驟中,除去在一次以及二次電鑄步驟中形成的第一抗蝕體18以及第二抗蝕體21,並在除去了兩抗蝕體18、21的空間,填充軟化的模制樹脂22,之後使之硬化,從而形成了埋設並保持導電體圖案1的模制體2。根據該製造方法,通過利用具備所希望的機械強度、材料特性的模 制樹脂22來形成模制體2,能夠利用最適於封裝基板的使用用途的模制體2來埋設並保持導電體圖案1。因此,在封裝基板需要耐熱性的情況下,通過例如在模制樹脂22使用聚對苯二甲酸丁二酯或者聚乙烯等,能夠得到耐熱性優異的封裝基板。並且,通過將模制樹脂22設為與對安裝於封裝基板的半導體元件S進行密封的密封體30同一或者相同系統的樹脂材料,能夠使模制體2與密封體30之間的固定狀態穩固,並且由於能夠使兩者2、30的熱膨脹率大致相同,所以能夠防止在模制體2與密封體30之間的邊界面產生剝離。 Further, in the method for manufacturing a package substrate of this embodiment, in the molding step after the secondary electroforming step, the first resist 18 and the second resist formed in the primary and secondary electroforming steps are removed The body 21 is filled with the softened molding resin 22 after removing the spaces of the two resists 18 and 21, and then hardened, thereby forming the molded body 2 in which the conductor pattern 1 is buried and held. According to this manufacturing method, by using a mold having desired mechanical strength and material properties The molded body 2 is formed by forming the resin 22, and the conductive body pattern 1 can be embedded and held by the molded body 2 most suitable for the use of the package substrate. Therefore, when heat resistance is required for the package substrate, for example, by using polybutylene terephthalate, polyethylene, or the like for the mold resin 22, a package substrate excellent in heat resistance can be obtained. In addition, by setting the molding resin 22 to the same or the same system of resin material as the sealing body 30 that seals the semiconductor element S mounted on the package substrate, the fixed state between the molding body 2 and the sealing body 30 can be stabilized In addition, since the thermal expansion coefficients of the two 2 and 30 can be made substantially the same, peeling can be prevented at the boundary surface between the molded body 2 and the sealing body 30.

並且,使第一電鑄層6的外形形狀形成比第二電鑄層7的外形形狀大,在模制步驟與阻隔層形成步驟之間,包括從導電體圖案1以及模制體2剝離並除去電鑄母模15的母模除去步驟。根據該製造方法,由於導電體圖案1以及模制體2形成在電鑄母模15上,所以能夠使除去電鑄母模15之後的第一電鑄層6的露出面以及模制體2的下面成為平滑的一個面。因此,作為進行阻隔層形成步驟的前處理,不需要進行研磨處理等,從而能夠減少封裝基板的製造成本。 Moreover, the outer shape of the first electroformed layer 6 is formed to be larger than the outer shape of the second electroformed layer 7, and between the molding step and the barrier layer forming step, it is peeled off from the conductor pattern 1 and the molded body 2 and The master mold removing step of removing the electroformed master mold 15. According to this manufacturing method, since the conductor pattern 1 and the molded body 2 are formed on the electroformed master mold 15, the exposed surface of the first electroformed layer 6 and the molded body 2 can be exposed after the electroformed master mold 15 is removed The following becomes a smooth face. Therefore, as a pre-treatment for performing the barrier layer forming step, it is not necessary to perform a polishing treatment or the like, and the manufacturing cost of the package substrate can be reduced.

(第二實施方式)圖11以及圖12中表示本發明的封裝基板的第二實施方式。在本實施方式中,省略了封裝基板的製造過程中的模制步驟這一點與第一實施方式不同。也就是說,如圖11所示,將用於形成第一電鑄層6以及第二電鑄層7的第一抗蝕體18和第二抗蝕體21用作埋設並保持導電體圖案1的模制體2。並且,在電鑄母模15的上面,如圖12(a)所示,為了實現後述的母模除去步驟中的剝離的容易化,預先積層有薄膜狀的鎳層15a和銅層15b。其它與第一實施方式相同,從而對相同的部件標 註相同的符號並省略其說明。 (Second Embodiment) FIGS. 11 and 12 show a second embodiment of the package substrate of the present invention. This embodiment is different from the first embodiment in that the molding step in the manufacturing process of the package substrate is omitted. That is, as shown in FIG. 11, the first resist 18 and the second resist 21 used to form the first electroformed layer 6 and the second electroformed layer 7 are used to bury and hold the conductor pattern 1的模体2。 The molded body 2. In addition, as shown in FIG. 12( a ), on the upper surface of the electroformed master mold 15, in order to facilitate the peeling in the master mold removal step described later, a thin-film nickel layer 15 a and a copper layer 15 b are laminated in advance. Others are the same as the first embodiment, so that the same components are marked Note the same symbols and omit their description.

本實施方式的封裝基板經由圖12(b)所示的母模除去步驟和圖12(c)~圖12(e)所示的阻隔層形成步驟而形成於圖4(a)~圖4(d)所示的二次電鑄步驟結束後的製造過程中的封裝基板(參照圖12(a))。在母模除去步驟中,在強制性地剝離除去電鑄母模15和預先形成在電鑄母模15上的鎳層15a之後,對銅層15b進行除去(蝕刻)。由此,得到了在由第一抗蝕體18和第二抗蝕體21構成的模制體2埋設並保持有圖12(b)所示的導電體圖案1的封裝基板。這樣,最後通過除去銅層15b,能夠使母模除去步驟中的電鑄母模15的剝離變得容易,並且能夠抑制兩抗蝕體18、21的破損。 The package substrate of this embodiment is formed in FIGS. 4(a) to 4(a) through a master mold removal step shown in FIG. 12(b) and a barrier layer forming step shown in FIGS. 12(c) to 12(e). d) The package substrate in the manufacturing process after the completion of the secondary electroforming step shown (see FIG. 12(a)). In the master mold removal step, after the electroforming master mold 15 and the nickel layer 15a previously formed on the electrocast master mold 15 are forcibly peeled off, the copper layer 15b is removed (etched). Thereby, a package substrate in which the conductor pattern 1 shown in FIG. 12(b) is buried and held in the molded body 2 composed of the first resist 18 and the second resist 21 is obtained. In this way, by finally removing the copper layer 15b, it is possible to facilitate the peeling of the electroformed master mold 15 in the master mold removal step, and it is possible to suppress breakage of both resists 18 and 21.

在阻隔層形成步驟中,如圖12(c)所示,將在母模除去步驟中得到的封裝基板上下反轉,在第一電鑄層6以及第一抗蝕體18的上面形成防焊油墨層26,並且在該防焊油墨層26的上面載置並緊貼第三圖案薄膜27,該第三圖案薄膜27具有與外形形狀比第一電鑄層6的外形形狀小一圈的窗12對應的透光孔。接下來,用紫外線光燈照射紫外線光而進行曝光,並進行顯影、乾燥的各處理,溶解除去未曝光部分,由此如圖12(d)所示地在第一電鑄層6以及第一抗蝕體18上形成阻隔層11,在該阻隔層11形成有窗12。最後,在與窗12相對的第一電鑄層6的表面,通過無電鍍形成由金構成的表面層13,並將其上下反轉,由此得到了具備圖12(e)所示的阻隔層11的封裝基板。在本實施方式的封裝基板安裝有半導體元件S的半導體裝置與第一實施方式相同,因此省略其說明。 In the barrier layer forming step, as shown in FIG. 12(c), the packaging substrate obtained in the master mold removing step is turned upside down to form a solder mask on the first electroformed layer 6 and the first resist 18 An ink layer 26, and a third pattern film 27 is placed on and closely attached to the solder resist ink layer 26, and the third pattern film 27 has a window that is one circle smaller than the outer shape of the first electroformed layer 6 12 corresponds to the light transmission hole. Next, the ultraviolet light is irradiated with an ultraviolet light to expose, and each process of development and drying is carried out to dissolve and remove the unexposed portion, thereby, as shown in FIG. 12(d), the first electroformed layer 6 and the first A barrier layer 11 is formed on the resist 18, and a window 12 is formed on the barrier layer 11. Finally, on the surface of the first electroformed layer 6 opposite to the window 12, a surface layer 13 made of gold was formed by electroless plating, and turned upside down, thereby obtaining a barrier as shown in FIG. 12(e) The package substrate of layer 11. The semiconductor device on which the semiconductor element S is mounted on the package substrate of this embodiment is the same as the first embodiment, and therefore its description is omitted.

如上述那樣,在本實施方式的封裝基板中,由於第一抗蝕體 18以及第二抗蝕體21兼作模制體2,所以能夠將兩抗蝕體18、21用作埋設並保持導電體圖案1的模制體2。因此,能夠得到不需要另外使導電體圖案1埋設並保持於模制體2而具備阻隔層11的封裝基板。並且,在本實施方式的封裝基板的製造方法中,保留在一次以及二次電鑄步驟中形成的第一抗蝕體18以及第二抗蝕體21,而兩抗蝕體18、21兼作埋設並保持導電體圖案1的模制體2,從而能夠省略形成模制體2的步驟,相應地能夠減少封裝基板的製造成本。 As described above, in the package substrate of this embodiment, the first resist Since the 18 and the second resist 21 also serve as the molded body 2, the two resists 18 and 21 can be used as the molded body 2 in which the conductor pattern 1 is buried and held. Therefore, it is possible to obtain a package substrate provided with the barrier layer 11 without separately embedding and holding the conductor pattern 1 in the molded body 2. Furthermore, in the method of manufacturing a package substrate of this embodiment, the first resist 18 and the second resist 21 formed in the primary and secondary electroforming steps are retained, and the two resists 18 and 21 also serve as embedding By holding the molded body 2 of the conductor pattern 1, the step of forming the molded body 2 can be omitted, and accordingly the manufacturing cost of the package substrate can be reduced.

在上述的第二實施方式中,第一光阻16以及第二光阻層、19使用了負顯的感光性抗蝕乾膜,但透過使用負顯的感光性阻焊的乾膜,能夠提高由第一抗蝕體18以及第二抗蝕體21構成的模制體2的構造強度,從而能夠有效地防止模制體2破損。 In the second embodiment described above, the negative photoresist dry film is used for the first photoresist 16 and the second photoresist layers 19, but it can be improved by using the dry film for negative photoresist soldering. The structural strength of the molded body 2 composed of the first resist 18 and the second resist 21 can effectively prevent the molded body 2 from being damaged.

在本實施方式中,由於經由研磨第二抗蝕體21以及第二電鑄層7的基層8的表面的步驟後積層形成表面層9,所以如圖11所示,表面層9以從模制體2的上面突出的狀態形成。此外,在將基層8的厚度尺寸形成為比第二抗蝕體21的厚度尺寸小而省去了研磨步驟的情況下,表面層9的上面能夠採取與模制體2的上面成為一個面、或者位於比模制體2的上面靠下側的形態。 In this embodiment, since the surface layer 9 is formed after the step of grinding the surface of the second resist 21 and the base layer 8 of the second electroformed layer 7, as shown in FIG. 11, the surface layer 9 is molded from The state in which the upper surface of the body 2 protrudes is formed. In addition, when the thickness dimension of the base layer 8 is formed to be smaller than the thickness dimension of the second resist 21 and the polishing step is omitted, the upper surface of the surface layer 9 can be taken as the same surface as the upper surface of the molded body 2, Alternatively, it may be located below the upper surface of the molded body 2.

(第三實施方式)圖13至圖16中表示本發明的封裝基板的第三實施方式。在本實施方式中,在第一電鑄層6和第二電鑄層7的外形形狀的大小關係相反形成的方面、以及相伴隨於此在成為外形形狀形成為較大的第二電鑄層7側的模制體2的上面形成有阻隔層11的方面與第一實施方式不同。構成導電體圖案1的第二電鑄層7的外形形狀形成為比第一 電鑄層6的外形形狀大,第一電鑄層6由基層8和表面層9構成。在與開口於阻隔層11的窗12相對的第二電鑄層7的表面,形成有表面層13。在本實施方式中,導電體圖案1的第一電鑄層6構成安裝墊3以及外部電極4的半導體元件S的構裝面側。其它與第一實施方式相同,從而對相同的部件標注相同的符號而省略其說明。 (Third Embodiment) FIGS. 13 to 16 show a third embodiment of the package substrate of the present invention. In the present embodiment, the second electroformed layer having a larger external shape is formed in that the size relationship between the outer shapes of the first electroformed layer 6 and the second electroformed layer 7 is oppositely formed, and concomitantly with this. The 7-side molded body 2 is different from the first embodiment in that the barrier layer 11 is formed on the upper surface. The outer shape of the second electroformed layer 7 constituting the conductor pattern 1 is formed The outer shape of the electroformed layer 6 is large, and the first electroformed layer 6 is composed of a base layer 8 and a surface layer 9. A surface layer 13 is formed on the surface of the second electroformed layer 7 opposed to the window 12 opening to the barrier layer 11. In the present embodiment, the first electroformed layer 6 of the conductor pattern 1 constitutes the mounting surface side of the semiconductor element S of the mounting pad 3 and the external electrode 4. Others are the same as in the first embodiment, so that the same components are denoted by the same symbols and their descriptions are omitted.

圖14至圖16中表示本實施方式的封裝基板的製造方法。封裝基板經由圖14(a)~圖14(d)所示的一次電鑄步驟、圖15(a)~圖15(d)所示的二次電鑄步驟、圖16(a)、圖16(b)所示的模制步驟、圖16(c)、圖16(d)所示的阻隔層形成步驟、以及圖16(e)所示的母模除去步驟而形成。在一次電鑄步驟中,如圖14(a)所示,在電鑄母模15的上面形成第一光阻16,之後在該第一光阻層16的上面載置並緊貼第一圖案薄膜17,該第一圖案薄膜17具有與第一電鑄層6對應的透光孔。接下來,用紫外線光燈照射紫外線光而進行曝光,並進行顯影、乾燥的各處理,溶解除去未曝光部分,由此如圖14(b)所示地在電鑄母模15上形成與第一電鑄層6對應的第一抗蝕體18。 14 to 16 show a method of manufacturing the package substrate of this embodiment. The package substrate passes through the primary electroforming steps shown in FIGS. 14(a) to 14(d), the secondary electroforming steps shown in FIGS. 15(a) to 15(d), FIGS. 16(a) and 16 It is formed by the molding step shown in (b), the barrier layer forming step shown in FIGS. 16(c) and 16(d), and the master mold removal step shown in FIG. 16(e). In one electroforming step, as shown in FIG. 14(a), the first photoresist 16 is formed on the top of the electroforming master mold 15, and then the first pattern is placed on the first photoresist layer 16 and closely adheres to the first pattern Film 17, the first pattern film 17 has a light transmission hole corresponding to the first electroformed layer 6. Next, ultraviolet light is irradiated with an ultraviolet light lamp to perform exposure, and each process of development and drying is carried out to dissolve and remove the unexposed part, thereby forming the first and third A first resist 18 corresponding to an electroformed layer 6.

接下來,如圖14(c)所示,使金電沉積在第一抗蝕體18以外的電鑄母模15上,而形成第一電鑄層6的表面層9,並且通過利用電鑄法使作為電鑄金屬的鎳電沉積在表面層9上,而積層形成基層8,從而形成第一電鑄層6(參照圖13)。在形成第一電鑄層6之後,通過研磨第一抗蝕體18以及第一電鑄層6(基層8)的表面,來如圖14(d)所示地使第一抗蝕體18以及第一電鑄層6的表面成為一個面。 Next, as shown in FIG. 14(c), gold is electrodeposited on the electroforming master mold 15 other than the first resist 18 to form the surface layer 9 of the first electroforming layer 6, and by using electroforming In this method, nickel, which is an electroformed metal, is electrodeposited on the surface layer 9, and the base layer 8 is laminated to form a first electroformed layer 6 (see FIG. 13). After forming the first electroformed layer 6, by grinding the surfaces of the first resist 18 and the first electroformed layer 6 (base layer 8), as shown in FIG. 14(d), the first resist 18 and The surface of the first electroformed layer 6 becomes one surface.

在二次電鑄步驟中,如圖15(a)所示,在第一電鑄層6以 及第一抗蝕體18的上面形成第二光阻層19,之後在該第二光阻層19的上面載置並緊貼第二圖案薄膜20,該第二圖案薄膜20具有與外形形狀比第一電鑄層6的外形形狀大的第二電鑄層7對應的透光孔。接下來,用紫外線光燈照射紫外線光而進行曝光,並進行顯影、乾燥的各處理,溶解除去未曝光部分,由此如圖15(b)所示地在第一抗蝕體18上形成與第二電鑄層7對應的第二抗蝕體21。 In the secondary electroforming step, as shown in FIG. 15(a), in the first electroforming layer 6 And a second photoresist layer 19 is formed on the top of the first resist 18, and then a second pattern film 20 is placed on the second photoresist layer 19 and closely adhered to the second pattern film 20 The second electroformed layer 7 having a large outer shape of the first electroformed layer 6 corresponds to the light transmission hole. Next, ultraviolet light is irradiated with an ultraviolet light lamp to perform exposure, and each process of development and drying is carried out to dissolve and remove the unexposed portion, thereby forming a layer on the first resist 18 as shown in FIG. 15(b). The second resist 21 corresponding to the second electroformed layer 7.

接下來,如圖15(c)所示,通過利用電鑄法使作為電鑄金屬的鎳電沉積在第二抗蝕體21以外的第一電鑄層6以及第一抗蝕體18上,來層疊形成第二電鑄層7。在形成第二電鑄層7之後,通過研磨第二抗蝕體21以及第二電鑄層7的表面,來如圖15(d)所示地使第二抗蝕體21以及第二電鑄層7的表面成為一個面。 Next, as shown in FIG. 15(c), nickel as an electroformed metal is electrodeposited on the first electroformed layer 6 and the first resist 18 other than the second resist 21 by using an electroforming method, To form the second electroformed layer 7. After forming the second electroformed layer 7, the surfaces of the second resist 21 and the second electroformed layer 7 are polished to make the second resist 21 and the second electroformed as shown in FIG. 15(d) The surface of the layer 7 becomes one surface.

在模制步驟中,如圖16(a)所示,將在一次以及二次電鑄步驟中形成的第一抗蝕體18和第二抗蝕體21溶解除去,並在除去兩者18、21後的空間填充由軟化的熱塑性的環氧樹脂構成的模制樹脂22,之後使之硬化,從而如圖16(b)所示地形成模制體2。 In the molding step, as shown in FIG. 16(a), the first resist 18 and the second resist 21 formed in the primary and secondary electroforming steps are dissolved and removed, and both are removed 18, The space after 21 is filled with a molded resin 22 made of a softened thermoplastic epoxy resin, and then hardened to form a molded body 2 as shown in FIG. 16(b).

在阻隔層形成步驟中,如圖16(c)所示,在第二電鑄層7以及模制體2的上面形成防焊油墨層26,之後在該防焊油墨層26的上面載置並緊貼第三圖案薄膜27,該第三圖案薄膜27具有與外形形狀比第二電鑄層7的外形形狀小一圈的窗12對應的透光孔。接下來,用紫外線光燈照射紫外線光而進行曝光,並進行顯影、乾燥的各處理,溶解除去未曝光部分,由此如圖16(d)所示地在第二電鑄層7以及模制體2上形成阻隔層11,在該阻隔層11形成有窗12。之後,在與窗12相對的第二電鑄層7的表面, 有透過無電鍍形成由金構成的表面層13。 In the barrier layer forming step, as shown in FIG. 16(c), a solder resist ink layer 26 is formed on the second electroformed layer 7 and the molded body 2, and then placed on the solder resist ink layer 26 and Adjacent to the third pattern film 27, the third pattern film 27 has a light transmission hole corresponding to the window 12 whose outer shape is smaller than that of the second electroformed layer 7 by one turn. Next, the ultraviolet light is irradiated with an ultraviolet light to expose, and each process of development and drying is carried out to dissolve and remove the unexposed portion, thereby forming the second electroformed layer 7 and molding as shown in FIG. 16(d) A barrier layer 11 is formed on the body 2, and a window 12 is formed on the barrier layer 11. After that, on the surface of the second electroformed layer 7 opposite to the window 12, The surface layer 13 made of gold is formed by electroless plating.

在母模除去步驟中,通過從導電體圖案1(第二電鑄層7)以及模制體2(模制樹脂22)強制地剝離並除去電鑄母模15,從而得到具備圖16(e)所示的阻隔層11的封裝基板。 In the master mold removal step, the electroformed master mold 15 is forcibly peeled off from the conductor pattern 1 (second electroformed layer 7) and the molded body 2 (molded resin 22) to remove ) Shows the packaging substrate of the barrier layer 11.

本實施方式的半導體裝置的製造中,使封裝基板的上下反轉,使第一電鑄層6位於上面,之後將半導體元件S安裝在安裝墊3上,並使用由金構成的金屬線W而利用引線接合裝置將電極31和與其對應的外部電極4之間連結。另外,用熱塑性環氧樹脂密封封裝基板上的半導體元件2的安裝部分,從而在封裝基板上形成密封體30。 In the manufacturing of the semiconductor device of the present embodiment, the packaging substrate is turned upside down, the first electroformed layer 6 is positioned on the top, and then the semiconductor element S is mounted on the mounting pad 3, and the metal wire W made of gold is used. The electrode 31 and the corresponding external electrode 4 are connected by a wire bonding device. In addition, the mounting portion of the semiconductor element 2 on the package substrate is sealed with a thermoplastic epoxy resin, thereby forming a sealing body 30 on the package substrate.

如上述那樣,在本實施方式的封裝基板中,由於將阻隔層11形成為對從模制體2露出的第二電鑄層7的外緣部進行覆蓋,所以能夠利用窗12的周緣部的阻隔層11來阻擋第二電鑄層7而限制導電體圖案1的移動。 As described above, in the package substrate of the present embodiment, since the barrier layer 11 is formed to cover the outer edge of the second electroformed layer 7 exposed from the molded body 2, the peripheral edge of the window 12 can be used The barrier layer 11 blocks the second electroformed layer 7 and restricts the movement of the conductor pattern 1.

由於將第二電鑄層7的外形形狀形成為比第一電鑄層6的外形形狀大,且在模制體2的上面形成有阻隔層11,所以未由模制體2限制移動的導電體圖案1向第二電鑄層7露出的上面側的移動能夠由阻隔層11限制,從而能夠由阻隔層11阻止導電體圖案1從模制體2脫落。 Since the outer shape of the second electroformed layer 7 is formed to be larger than the outer shape of the first electroformed layer 6, and the barrier layer 11 is formed on the upper surface of the molded body 2, the conductive body that is not restricted by the molded body 2 is moved The movement of the body pattern 1 to the upper surface side where the second electroformed layer 7 is exposed can be restricted by the barrier layer 11, so that the barrier layer 11 can prevent the conductor pattern 1 from falling out of the molded body 2.

並且,在本實施方式的封裝基板的製造方法中,包括在阻隔層形成步驟之後,從導電體圖案1以及模制體2剝離並除去電鑄母模15的母模除去步驟。根據該製造方法,由於在經由了阻隔層形成步驟後的最終步驟中剝離並除去電鑄母模15,所以在封裝基板的製造過程中,能夠在由電鑄母模15可靠地支承的狀態下製造導電體圖案1以及模制體2,從而能 夠以穩定的狀態製造封裝基板。 In addition, the method of manufacturing the package substrate of the present embodiment includes the step of removing the electroforming master mold 15 from the conductor pattern 1 and the molded body 2 after the barrier layer forming step and removing the electroforming master mold 15. According to this manufacturing method, since the electroforming master mold 15 is peeled off and removed in the final step after passing through the barrier layer forming step, it is possible to reliably support the electroforming master mold 15 in the state of manufacturing the package substrate The conductor pattern 1 and the molded body 2 are manufactured so that It is enough to manufacture a package substrate in a stable state.

(第四實施方式)圖17以及圖18中表示本發明的封裝基板的第四實施方式。在本實施方式中,在省略了封裝基板的製造過程中的模制步驟的方面與第三實施方式不同。也就是說,如圖18所示,將用於形成第一電鑄層6以及第二電鑄層7的第一抗蝕體18和第二抗蝕體21用作埋設並保持導電體圖案1的模制體2。並且,製造封裝基板的製造中,與第二實施方式相同,使用在上面積層有薄膜狀的鎳層15a和銅層15b的電鑄母模15。其它與第三實施方式相同,從而對相同的部件標注相同的符號並省略其說明。 (Fourth Embodiment) FIGS. 17 and 18 show a fourth embodiment of the package substrate of the present invention. This embodiment is different from the third embodiment in that the molding step in the manufacturing process of the package substrate is omitted. That is, as shown in FIG. 18, the first resist 18 and the second resist 21 used to form the first electroformed layer 6 and the second electroformed layer 7 are used to bury and hold the conductor pattern 1的模体2。 The molded body 2. In addition, in the manufacture of the package substrate, as in the second embodiment, the electroformed master mold 15 having the thin-film nickel layer 15 a and the copper layer 15 b on the upper area layer is used. Others are the same as the third embodiment, so that the same components are denoted by the same symbols and their descriptions are omitted.

本實施方式的封裝基板在圖15(a)~圖15(d)所示的二次電鑄步驟結束之後,經由圖18(a)、圖18(b)所示的阻隔層形成步驟和圖18(c)所示的母模除去步驟而形成。在阻隔層形成步驟中,如圖18(a)所示,在第二電鑄層7以及第二抗蝕體21的上面形成防焊油墨層26,之後在該防焊油墨層26的上面載置並緊貼第三圖案薄膜27,該第三圖案薄膜27具有與外形形狀比第二電鑄層7的外形形狀小一圈的窗12對應的透光孔。接下來,用紫外線光燈照射紫外線光而進行曝光,並進行顯影、乾燥的各處理,溶解除去未曝光部分,由此如圖18(b)所示地在第二電鑄層7以及第二抗蝕體21上形成阻隔層11,在該阻隔層11形成有窗12。之後,在與窗12相對的第二電鑄層7的表面,透過無電鍍形成由金構成的表面層13。 After the secondary electroforming steps shown in FIG. 15(a) to FIG. 15(d) are completed, the package substrate of this embodiment passes through the barrier layer forming steps and diagrams shown in FIGS. 18(a) and 18(b). It is formed by the master mold removal step shown in 18(c). In the barrier layer forming step, as shown in FIG. 18(a), a solder resist ink layer 26 is formed on the second electroformed layer 7 and the second resist 21, and then the solder resist ink layer 26 is loaded on The third pattern film 27 is placed close to the third pattern film 27, and the third pattern film 27 has a light transmission hole corresponding to the window 12 whose outer shape is smaller than that of the second electroformed layer 7 by one turn. Next, ultraviolet light is irradiated with an ultraviolet light lamp to perform exposure, and each process of development and drying is performed to dissolve and remove the unexposed portion, thereby forming the second electroformed layer 7 and the second as shown in FIG. 18(b) A barrier layer 11 is formed on the resist 21, and a window 12 is formed on the barrier layer 11. After that, a surface layer 13 made of gold is formed on the surface of the second electroformed layer 7 facing the window 12 through electroless plating.

在母模除去步驟中,在強制性地剝離除去電鑄母模15和預先形成在電鑄母模15上的鎳層15a之後,對銅層15b進行除去(蝕刻),由此得到了具備圖18(c)所示的阻隔層11的封裝基板。 In the master mold removal step, after the electroforming master mold 15 and the nickel layer 15a previously formed on the electrocast master mold 15 are forcibly peeled off, the copper layer 15b is removed (etched), thereby obtaining The package substrate of the barrier layer 11 shown in 18(c).

在上述的實施方式中,第一光阻層16以及第二光阻層19使用了負顯的感光性抗蝕乾膜,但與之前的第二實施方式相同,通過使用負顯的感光性阻焊的乾膜,能夠提高由第一抗蝕體18以及第二抗蝕體21構成的模制體2的構造強度,從而能夠有效地防止模制體2破損。 In the above-described embodiment, the negative photoresist dry film is used for the first photoresist layer 16 and the second photoresist layer 19, but it is the same as the previous second embodiment, by using the negative photoresist The soldered dry film can increase the structural strength of the molded body 2 composed of the first resist 18 and the second resist 21, and can effectively prevent the molded body 2 from being damaged.

在本實施方式的封裝基板安裝有半導體元件S的半導體裝置與第三實施方式相同,從而省略其說明。 The semiconductor device on which the semiconductor element S is mounted on the package substrate of this embodiment is the same as that of the third embodiment, and its description is omitted.

如上所述,在上述的各實施方式的封裝基板中,俯視時的構成導電體圖案1的第一電鑄層6和第二電鑄層7的外形形狀中一方形成為比另一方大,在模制體2的任一個外表面,形成有阻止導電體圖案1從模制體2脫落的阻隔層11,從而即使在當輸送時、半導體元件的安裝時封裝基板產生了撓曲、扭轉等變形的情況下,能夠由阻隔層11阻止導電體圖案1從模制體2脫落。因此,能夠得到如下封裝基板:消除導電體圖案1從模制體2脫落、或者產生位置偏移,而能夠簡單地進行輸送時、半導體元件的安裝時的操作。並且,與設置阻隔層11相應地,提高相對于撓曲、扭轉等變形的抵抗力,從而能夠抑制封裝基板變形。 As described above, in the package substrates of the above-described embodiments, one of the outer shapes of the first electroformed layer 6 and the second electroformed layer 7 constituting the conductor pattern 1 in plan view is formed larger than the other. On either outer surface of the molded body 2, a barrier layer 11 is formed to prevent the conductor pattern 1 from falling off from the molded body 2, so that the package substrate is deformed such as deflection, torsion, etc. even during transportation and mounting of the semiconductor element In the case of, the barrier layer 11 can prevent the conductor pattern 1 from falling out of the molded body 2. Therefore, it is possible to obtain a package substrate in which the conductor pattern 1 is eliminated from the molded body 2 or the positional deviation occurs, and the operation at the time of transportation or the mounting of the semiconductor element can be easily performed. In addition, according to the provision of the barrier layer 11, the resistance against deformation such as deflection and torsion is increased, so that the deformation of the package substrate can be suppressed.

由於由光硬化型的防焊油膜層26形成阻隔層11,所以能夠通過光刻法容易地形成所希望的圖案的阻隔層11,從而能夠進一步減少具備阻隔層11的封裝基板的製造成本。並且,由於與以酚醛樹脂作為基礎聚合物的通用光阻劑相比,防焊油墨層26的構造強度高,所以能夠抑制裂縫、缺口等阻隔層11的破損,而能夠有效地阻止導電體圖案1從模制體2脫落、或者產生位置偏移。 Since the barrier layer 11 is formed of the photocurable solder resist film layer 26, the barrier layer 11 of a desired pattern can be easily formed by photolithography, and the manufacturing cost of the package substrate provided with the barrier layer 11 can be further reduced. In addition, since the solder resist ink layer 26 has a higher structural strength than a general-purpose photoresist using a phenol resin as a base polymer, it is possible to suppress breakage of the barrier layer 11 such as cracks and notches, and to effectively prevent the conductor pattern 1 Drop off from the molded body 2, or a positional deviation occurs.

並且,在上述的各實施方式的封裝基板的製造方法中,包括 一次電鑄步驟、二次電鑄步驟以及阻隔層形成步驟,而形成具備阻隔層11的封裝基板。並且,在阻隔層形成步驟中,在模制體2的任一個外表面形成防焊油墨層26,並通過光刻法形成規定圖案的阻隔層11。根據該製造方法,能夠利用與一次以及二次電鑄阻隔相同的設備進行曝光、顯影、乾燥等各處理,並且能夠容易地形成規定圖案的阻隔層11,從而能夠減少具備阻隔層11的封裝基板的製造成本。 In addition, the method for manufacturing a package substrate of each of the above embodiments includes The primary electroforming step, the secondary electroforming step, and the barrier layer forming step form a package substrate provided with the barrier layer 11. In addition, in the barrier layer forming step, the solder resist ink layer 26 is formed on any outer surface of the molded body 2, and the barrier layer 11 of a predetermined pattern is formed by photolithography. According to this manufacturing method, each process such as exposure, development, and drying can be performed using the same equipment as the primary and secondary electroforming barriers, and the barrier layer 11 of a predetermined pattern can be easily formed, so that the package substrate provided with the barrier layer 11 can be reduced Manufacturing costs.

並且,在上述的各實施方式的封裝基板安裝有半導體元件S的半導體裝置中,在用金屬線W連接導電體圖案1所具備的外部電極4和半導體元件S所具備的電極31之後,由密封體30密封了半導體元件S以及金屬線W。根據該半導體裝置,在利用金屬線W進行的外部電極4與電極31的連接作業、以及利用密封體30進行的密封作業時,假使封裝基板產生了撓曲、扭轉的變形,導電體圖案1也不會從模制體2脫落、或者產生位置偏移,從而能夠簡單地進行上述作業時的封裝基板的操作。並且,能夠減少半導體裝置的製造時的不良品形成率,而能夠提高半導體裝置的生產率。 In addition, in the semiconductor device in which the semiconductor element S is mounted on the package substrate of each of the embodiments described above, the external electrode 4 included in the conductor pattern 1 and the electrode 31 included in the semiconductor element S are connected by the metal wire W, and then sealed The body 30 seals the semiconductor element S and the metal wire W. According to this semiconductor device, in the connection operation between the external electrode 4 and the electrode 31 by the metal wire W and the sealing operation by the sealing body 30, if the package substrate is deformed by bending or twisting, the conductor pattern 1 is also The package substrate during the above-mentioned operation can be easily performed without falling off from the molded body 2 or being displaced. In addition, it is possible to reduce the defective product formation rate at the time of manufacturing the semiconductor device, and to improve the productivity of the semiconductor device.

在上述的第一以及第三實施方式中,與第二以及第四實施方式相同,能夠使用積層形成有薄膜狀的鎳層15a和銅層15b的電鑄母模15來製造封裝基板。此時,能夠提高母模除去步驟時的電鑄母模15的剝離性。並且,在第二以及第四實施方式中,與第一以及第三實施方式相同,能夠使用不具備鎳層15a以及銅層15b的電鑄母模15來製造封裝基板。 In the first and third embodiments described above, similar to the second and fourth embodiments, the package substrate can be manufactured using the electroforming master mold 15 in which the thin-film nickel layer 15a and the copper layer 15b are laminated. In this case, the peelability of the electroformed master mold 15 during the master mold removal step can be improved. Furthermore, in the second and fourth embodiments, similar to the first and third embodiments, the package substrate can be manufactured using the electroformed master mold 15 that does not include the nickel layer 15a and the copper layer 15b.

在上述的各實施方式中,導電體圖案1通過電鑄而形成,但能夠通過蝕刻而形成。第一電鑄層6以及第二電鑄層7的外形形狀分別作 為一個平板狀的層而形成,但較小形成的一側的電鑄層的外形形狀也可以是四邊框狀、圓框狀、”

Figure 104123491-A0202-12-0025-19
”形狀、局部圓環狀、或者分割為多個,總之,若不以較大型成的一側的外形形狀突出,則能夠採用任意的形狀。導電體圖案1也可以在具備安裝墊3以及外部電極4以外,還具備片狀引線(tab lead)、引線腳(lead pin)等。構成第一電鑄層6和第二電鑄層7的金屬材料、構成模制樹脂22和密封體30的樹脂材料、構成第一光阻層16和第二光阻層19、以及防焊油墨層26的基礎聚合物的樹脂材料等不限定於上述實施方式中舉出的材料。並且,模制體2也可以使用防焊油墨,並且,除樹脂材料以外能夠由陶瓷等具有介電性的材料形成。窗12的開口形狀不限定於上述實施方式中舉出的形狀,能夠阻止導電體圖案1的脫落即可。半導體元件S也能夠構裝在封裝基板的形成有阻隔層11的一面側。 In the above embodiments, the conductor pattern 1 is formed by electroforming, but it can be formed by etching. The outer shapes of the first electroformed layer 6 and the second electroformed layer 7 are each formed as a flat plate-shaped layer, but the outer shape of the electroformed layer on the smaller side may be a four-frame shape or a round frame shape ,"
Figure 104123491-A0202-12-0025-19
"The shape, partial ring shape, or division into multiples. In short, any shape can be adopted without protruding from the outer shape of the larger side. The conductor pattern 1 may be provided with the mounting pad 3 and the outside. In addition to the electrode 4, tab leads, lead pins, etc. are provided. The metal material constituting the first electroformed layer 6 and the second electroformed layer 7, the mold resin 22 and the sealing body 30 The resin material, the resin material that constitutes the base polymer of the first photoresist layer 16 and the second photoresist layer 19, and the solder resist ink layer 26 are not limited to the materials mentioned in the above embodiment. Furthermore, the molded body 2 Solder resist ink can also be used, and it can be formed of a dielectric material such as ceramics other than the resin material. The opening shape of the window 12 is not limited to the shape mentioned in the above embodiment, and can prevent the conductor pattern 1 from coming off The semiconductor element S can also be mounted on the side of the package substrate on which the barrier layer 11 is formed.

1‧‧‧導電體圖案 1‧‧‧Conductor pattern

2‧‧‧模制體 2‧‧‧Molded body

3‧‧‧安裝墊 3‧‧‧Installation pad

4‧‧‧外部電極 4‧‧‧External electrode

6‧‧‧下導電層 6‧‧‧Lower conductive layer

7‧‧‧上導電層 7‧‧‧ Upper conductive layer

8‧‧‧基層 8‧‧‧ grassroots

9‧‧‧表面層 9‧‧‧Surface layer

11‧‧‧阻隔層 11‧‧‧ Barrier layer

12‧‧‧窗 12‧‧‧window

Claims (17)

一種封裝基板,導電體圖案(1)以其上下面露出的狀態埋設並保持於模制體(2)的封裝基板;其特徵在於:導電體圖案(1)具備安裝墊(3)及外部電極(4),且由下導電層(6)和積層形成在下導電層(6)上的上導電層(7)構成;俯視時的下導電層(6)和上導電層(7)的外形形狀形成為任意一方比另一方大;在模制體(2)的上面或者下面的任意一方,形成有阻止導電體圖案(1)從模制體(2)脫落的阻隔層(11);在自阻隔層(11)露出的封裝基板的表面形成有表面層(13)。 A packaging substrate in which a conductor pattern (1) is buried and held in a molded body (2) with its upper and lower surfaces exposed; characterized in that the conductor pattern (1) includes a mounting pad (3) and external electrodes (4), and is composed of a lower conductive layer (6) and an upper conductive layer (7) formed on the lower conductive layer (6); the outer shape of the lower conductive layer (6) and the upper conductive layer (7) when viewed from above Either one is larger than the other; on either side of the molded body (2), a barrier layer (11) is formed to prevent the conductor pattern (1) from falling off the molded body (2); A surface layer (13) is formed on the surface of the package substrate where the barrier layer (11) is exposed. 如申請專利範圍第1項所記載之封裝基板,其中,阻隔層(11)形成為對從模制體(2)露出的導電體圖案(1)的下導電層(6)或者上導電層(7)的一部分進行覆蓋。 The package substrate as described in item 1 of the patent application scope, wherein the barrier layer (11) is formed as a lower conductive layer (6) or an upper conductive layer (1) of the conductive pattern (1) exposed from the molded body (2) 7) Part of the coverage. 如申請專利範圍第1項所記載之封裝基板,其中,下導電層(6)的外形形狀形成為比上導電層(7)的外形形狀大,在模制體(2)的下面形成有阻隔層(11)。 The package substrate as described in item 1 of the patent application scope, wherein the outer shape of the lower conductive layer (6) is formed to be larger than the outer shape of the upper conductive layer (7), and a barrier is formed under the molded body (2) Floor (11). 如申請專利範圍第2項所記載之封裝基板,其中,下導電層(6)的外形形狀形成為比上導電層(7)的外形形狀大,在模制體(2)的下面形成有阻隔層(11)。 The package substrate as described in item 2 of the patent application scope, wherein the outer shape of the lower conductive layer (6) is formed to be larger than the outer shape of the upper conductive layer (7), and a barrier is formed under the molded body (2) Floor (11). 如申請專利範圍第1項所記載之封裝基板,其中,上導電層(7)的外形形狀形成為比下導電層(6)的外形形狀大, 在模制體(2)的上面形成有阻隔層(11)。 The package substrate as described in item 1 of the patent application scope, wherein the outer shape of the upper conductive layer (7) is formed larger than the outer shape of the lower conductive layer (6), A barrier layer (11) is formed on the molded body (2). 如申請專利範圍第2項所記載之封裝基板,其中,上導電層(7)的外形形狀形成為比下導電層(6)的外形形狀大,在模制體(2)的上面形成有阻隔層(11)。 The package substrate as described in item 2 of the patent application scope, wherein the outer shape of the upper conductive layer (7) is formed to be larger than the outer shape of the lower conductive layer (6), and a barrier is formed on the upper surface of the molded body (2) Floor (11). 如申請專利範圍第1至6項中任一項所記載之封裝基板,其特徵在,導電體圖案(1)由電鑄形成,用於形成下導電層(6)和上導電層(7)的下抗蝕體(18)以及上抗蝕體(21)兼作埋設並保持導電體圖案(1)的模制體(2)。 The package substrate as described in any one of items 1 to 6 of the patent application range, characterized in that the conductor pattern (1) is formed by electroforming to form a lower conductive layer (6) and an upper conductive layer (7) The lower resist (18) and the upper resist (21) also serve as a molded body (2) in which the conductor pattern (1) is buried and held. 如申請專利範圍第1至6項中任一項所記載之封裝基板,其特徵在於,阻隔層(11)由光硬化型的防焊油墨層(26)形成。 The package substrate as described in any one of claims 1 to 6, wherein the barrier layer (11) is formed of a photocurable solder resist ink layer (26). 如申請專利範圍第7項所記載之封裝基板,其特徵在於,阻隔層(11)由光硬化型的防焊油墨層(26)形成。 The package substrate as described in item 7 of the patent application range is characterized in that the barrier layer (11) is formed of a photocurable solder resist ink layer (26). 如申請專利範圍第1項所記載之封裝基板,其中,至少在自阻隔層(11)露出的安裝墊(3)的表面形成有表面層(13)。 The package substrate as described in item 1 of the patent application scope, wherein a surface layer (13) is formed on at least the surface of the mounting pad (3) exposed from the barrier layer (11). 一種封裝基板的製造方法,在模制體(2)埋設並保持具備安裝墊(3)及外部電極(4)且由下導電層(6)和積層形成在下導電層(6)上的上導電層(7)構成的導電體圖案(1),使導電體圖案(1)在模制體(2)的上下面露出,在模制體(2)的上面或者下面的任意一方,形成有阻止導電體圖案(1)從模制體(2)脫落的阻隔層(11),上述封裝基板的製造方法,其特徵在於,包括: 一次電鑄步驟,在該步驟中,在平板狀的電鑄母模(15)的表面形成下抗蝕體(18),並在未由下抗蝕體(18)覆蓋的電鑄母模(15)的表面形成下導電層(6);以及二次電鑄步驟,在該步驟中,在下導電層(6)或者下導電層(6)與下抗蝕體(18)的表面形成上抗蝕體(21),並在未由上抗蝕體(21)覆蓋的下導電層(6)或者下導電層(6)與下抗蝕體(18)的表面積層形成上導電層(7);以及阻隔層形成步驟,在該步驟中,在埋設並保持導電體圖案(1)的模制體(2)的上面或者下面的任意一方,形成阻隔層(11),在阻隔層形成步驟中,在模制體(2)的上面或者下面的任意一方形成光硬化型的防焊油墨層(26),並通過光刻法以對從模制體(2)露出的下導電層(6)或者上導電層(7)的露出部的一部分進行覆蓋的方式形成阻隔層(11),在自阻隔層(11)露出的封裝基板的表面形成表面層(13)。 A method for manufacturing a packaging substrate, in which a conductive body formed by a lower conductive layer (6) and a build-up layer formed on the lower conductive layer (6) is embedded and held in a molded body (2) with a mounting pad (3) and an external electrode (4) The conductor pattern (1) composed of the layer (7) exposes the conductor pattern (1) on the upper and lower surfaces of the molded body (2), and is formed on either side of the upper or lower surface of the molded body (2) The barrier layer (11) from which the conductor pattern (1) is detached from the molded body (2), and the method of manufacturing the package substrate described above, characterized in that it includes: An electroforming step, in which a lower resist (18) is formed on the surface of a flat electroforming master mold (15), and an electroforming master mold (not covered by the lower resist (18)) 15) The lower conductive layer (6) is formed on the surface; and a secondary electroforming step in which an upper resistance is formed on the surface of the lower conductive layer (6) or the lower conductive layer (6) and the lower resist (18) Etching body (21), and forming an upper conductive layer (7) on the lower conductive layer (6) or the lower conductive layer (6) and the surface area layer of the lower resist (18) not covered by the upper resist (21) And a barrier layer forming step in which a barrier layer (11) is formed on either side of the upper or lower surface of the molded body (2) in which the conductor pattern (1) is buried and held, in the barrier layer forming step , Forming a photo-curable solder resist ink layer (26) on either the upper or lower side of the molded body (2), and applying a photolithography method to the lower conductive layer (6) exposed from the molded body (2) Alternatively, a barrier layer (11) is formed so as to cover a part of the exposed portion of the upper conductive layer (7), and a surface layer (13) is formed on the surface of the package substrate exposed from the barrier layer (11). 如申請專利範圍第11項所記載之封裝基板之製造方法,其中,在二次電鑄步驟之後進行模制步驟,形成埋設並保持導電體圖案(1)的模制體(2),在模制步驟中,將在一次以及二次電鑄步驟中形成的下抗蝕體以及上抗蝕體(18、21)除去,並在除去下抗蝕體以及上抗蝕體(18、21)後的空間,填充軟化的模制樹脂(22),之後使之硬化後形成模制體(2)。 The method for manufacturing a package substrate as described in item 11 of the patent application scope, in which a molding step is performed after the secondary electroforming step to form a molded body (2) in which the conductor pattern (1) is buried and held, in the mold In the manufacturing process, the lower resist and the upper resist (18, 21) formed in the primary and secondary electroforming steps are removed, and after removing the lower resist and the upper resist (18, 21) The space is filled with softened molding resin (22) and then hardened to form a molded body (2). 如申請專利範圍第12項所記載之封裝基板之製造方法,其中,在俯視情況下,下導電層(6)的外形形狀形成為比上導電層(7)的外形形 狀大,並在模制體(2)的下面形成有阻隔層(11),在模制步驟與阻隔層形成步驟之間,包括從導電體圖案(1)以及模制體(2)剝離並除去電鑄母模(15)的母模除去步驟。 The method for manufacturing a package substrate as described in item 12 of the patent application scope, wherein, in a plan view, the outer shape of the lower conductive layer (6) is formed to be higher than that of the upper conductive layer (7) The shape is large, and a barrier layer (11) is formed under the molded body (2), between the molding step and the barrier layer forming step, including peeling off from the conductor pattern (1) and the molded body (2) and The step of removing the electroforming master (15). 如申請專利範圍第11或12項所記載之封裝基板之製造方法,其中,在俯視情況下,上導電層(7)的外形形狀形成為比下導電層(6)的外形形狀大,並在模制體(2)的上面形成有阻隔層(11),包括在阻隔層形成步驟之後,從導電體圖案(1)以及模制體(2)剝離並除去電鑄母模(15)的母模除去步驟。 The method for manufacturing a package substrate as described in item 11 or 12 of the patent application scope, in which the outer shape of the upper conductive layer (7) is formed to be larger than the outer shape of the lower conductive layer (6) when viewed from above A barrier layer (11) is formed on the molded body (2), including after the barrier layer forming step, peeling off and removing the mother of the electroforming master mold (15) from the conductor pattern (1) and the molded body (2) Mold removal step. 如申請專利範圍第11項所記載之封裝基板之製造方法,其中,保留在一次以及二次電鑄步驟中形成的下抗蝕體以及上抗蝕體(18、21),而兩抗蝕體(18、21)兼作埋設並保持導電體圖案(1)的模制體(2)。 The method for manufacturing a packaging substrate as described in item 11 of the patent application scope, in which the lower resist and the upper resist (18, 21) formed in the primary and secondary electroforming steps are retained, and the two resists (18, 21) Also serves as a molded body (2) to bury and hold the conductor pattern (1). 如申請專利範圍第11項所記載之封裝基板之製造方法,其中,至少在自阻隔層(11)露出的安裝墊(3)的表面形成表面層(13)。 The method for manufacturing a package substrate as described in item 11 of the patent application scope, wherein a surface layer (13) is formed on at least the surface of the mounting pad (3) exposed from the barrier layer (11). 一種半導體裝置,如申請專利範圍第1至10項中任一項所記載之封裝基板構裝有半導體元件(S),上述半導體裝置,其特徵在於,導電體圖案(1)具備外部電極(4),在將半導體元件(S)所具備的電極(31)和外部電極(4)電連接後,利用密封體(30)密封半導體元件(S)。 A semiconductor device comprising a semiconductor element (S) as described in any one of claims 1 to 10 of the patent application range. The semiconductor device is characterized in that the conductor pattern (1) is provided with an external electrode (4 ), after electrically connecting the electrode (31) and external electrode (4) included in the semiconductor element (S), the semiconductor element (S) is sealed with the sealing body (30).
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TW201025610A (en) * 2008-12-29 2010-07-01 Alpha & Omega Semiconductor True CSP power MOSFET based on bottom-source MOSFET

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