TWI677755B - 包含光反應性矽烷偶合劑之負型感光性樹脂組成物 - Google Patents

包含光反應性矽烷偶合劑之負型感光性樹脂組成物 Download PDF

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Publication number
TWI677755B
TWI677755B TW104119552A TW104119552A TWI677755B TW I677755 B TWI677755 B TW I677755B TW 104119552 A TW104119552 A TW 104119552A TW 104119552 A TW104119552 A TW 104119552A TW I677755 B TWI677755 B TW I677755B
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TW
Taiwan
Prior art keywords
resin composition
photosensitive resin
weight
parts
negative photosensitive
Prior art date
Application number
TW104119552A
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English (en)
Chinese (zh)
Other versions
TW201606432A (zh
Inventor
尹柱豹
Joo Pyo Yun
尹赫敏
Hyoc Min Youn
鄭鐘鎬
Jong Ho Jeong
李慈英
Ja Young Lee
韓承鎭
Seung Jin Han
朴珠亨
Ju Yeoung PARK
Original Assignee
南韓商東進世美肯有限公司
Dongjin Semichem Co., Ltd.
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Application filed by 南韓商東進世美肯有限公司, Dongjin Semichem Co., Ltd. filed Critical 南韓商東進世美肯有限公司
Publication of TW201606432A publication Critical patent/TW201606432A/zh
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Publication of TWI677755B publication Critical patent/TWI677755B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
TW104119552A 2014-06-18 2015-06-17 包含光反應性矽烷偶合劑之負型感光性樹脂組成物 TWI677755B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020140074503A KR102271238B1 (ko) 2014-06-18 2014-06-18 광반응성 실란 커플링제를 포함하는 네거티브 감광성 수지 조성물
KR10-2014-0074503 2014-06-18

Publications (2)

Publication Number Publication Date
TW201606432A TW201606432A (zh) 2016-02-16
TWI677755B true TWI677755B (zh) 2019-11-21

Family

ID=54935751

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104119552A TWI677755B (zh) 2014-06-18 2015-06-17 包含光反應性矽烷偶合劑之負型感光性樹脂組成物

Country Status (4)

Country Link
KR (1) KR102271238B1 (ko)
CN (1) CN106462070A (ko)
TW (1) TWI677755B (ko)
WO (1) WO2015194822A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6922849B2 (ja) * 2018-05-25 2021-08-18 信越化学工業株式会社 単量体、ポリマー、ネガ型レジスト組成物、フォトマスクブランク、及びレジストパターン形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007304544A (ja) * 2006-04-11 2007-11-22 Sekisui Chem Co Ltd 液晶配向用突起形成用ネガ型レジスト、液晶配向用突起、カラーフィルター、液晶表示素子及び液晶表示素子の製造方法
JP2012093395A (ja) * 2010-10-22 2012-05-17 Fujifilm Corp 光重合性組成物、カラーフィルタ、その製造方法、低屈折反率硬化膜、及び、固体撮像素子
WO2014069478A1 (ja) * 2012-10-31 2014-05-08 旭硝子株式会社 ネガ型感光性樹脂組成物、樹脂硬化膜、隔壁および光学素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4934353B2 (ja) * 2005-06-10 2012-05-16 ドンジン セミケム カンパニー リミテッド ネガティブ感光性樹脂組成物
KR100922844B1 (ko) 2007-12-13 2009-10-20 제일모직주식회사 절연막 형성용 감광성 수지 조성물
KR101396941B1 (ko) * 2008-11-07 2014-05-28 엘지디스플레이 주식회사 레지스트잉크 및 이를 이용한 패턴형성방법
CN101750895A (zh) * 2008-12-16 2010-06-23 华东理工大学 紫外纳米压印用含硅(甲基)丙烯酸酯型光固化压印胶及其应用
KR101318870B1 (ko) * 2009-12-31 2013-10-16 주식회사 삼양사 저온 경화형 음성 포토레지스트 조성물
KR20120021488A (ko) * 2010-08-03 2012-03-09 주식회사 동진쎄미켐 네가티브 감광성 수지 조성물
CN102023485B (zh) * 2010-11-12 2012-05-23 江南大学 采用光敏纳米二氧化硅对光致抗蚀材料进行改性制备的方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007304544A (ja) * 2006-04-11 2007-11-22 Sekisui Chem Co Ltd 液晶配向用突起形成用ネガ型レジスト、液晶配向用突起、カラーフィルター、液晶表示素子及び液晶表示素子の製造方法
JP2012093395A (ja) * 2010-10-22 2012-05-17 Fujifilm Corp 光重合性組成物、カラーフィルタ、その製造方法、低屈折反率硬化膜、及び、固体撮像素子
WO2014069478A1 (ja) * 2012-10-31 2014-05-08 旭硝子株式会社 ネガ型感光性樹脂組成物、樹脂硬化膜、隔壁および光学素子

Also Published As

Publication number Publication date
KR102271238B1 (ko) 2021-06-30
KR20150145104A (ko) 2015-12-29
TW201606432A (zh) 2016-02-16
CN106462070A (zh) 2017-02-22
WO2015194822A1 (ko) 2015-12-23

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