TWI677092B - 半導體裝置及半導體結構 - Google Patents

半導體裝置及半導體結構 Download PDF

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TWI677092B
TWI677092B TW106144828A TW106144828A TWI677092B TW I677092 B TWI677092 B TW I677092B TW 106144828 A TW106144828 A TW 106144828A TW 106144828 A TW106144828 A TW 106144828A TW I677092 B TWI677092 B TW I677092B
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gate
iii
compound layer
disposed
semiconductor device
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TW201929222A (zh
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維克 韋
Vivek Ningaraju
陳柏安
Po An Chen
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新唐科技股份有限公司
Nuvoton Technology Corporation
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Priority to CN201811486774.4A priority patent/CN110010680B/zh
Priority to US16/228,188 priority patent/US11342439B2/en
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Abstract

本發明實施例提供一種半導體裝置及半導體結構，上述半導體裝置包括基板、第一III-V族化合物層、第二III-V族化合物層、源極、汲極和閘極堆疊結構；第一III-V族化合物層設置於上述基板上；第二III-V族化合物層設置於第一III-V族化合物層上；源極和汲極設置於第二III-V族化合物層的相對側邊界上；閘極堆疊結構設置於第二III-V族化合物層上，閘極堆疊結構包括第一閘極和第二閘極，第一閘極設置於第二III-V族化合物層上；第二閘極設置於第一閘極上且與第一閘極電性絕緣，第二閘極電性耦接至源極。

Description

半導體裝置及半導體結構
本發明實施例係有關於一種半導體裝置及半導體結構，特別是有關於一種增強型高電子遷移率電晶體裝置及包括增強型高電子遷移率電晶體裝置的半導體結構。
高電子遷移率電晶體(high electron mobility transistor(HEMT))為一種場效電晶體，其利用兩種具不同能帶隙(band gap)的材料形成的接面做為載子通道。相較於習知的電晶體，氮化鎵(GaN)HEMT因具有優良的高頻性能，因而可操作於例如毫米波頻率(millimeter wave frequencies)的高頻範圍，所以可應用於例如手機(cell phones)、衛星電視接收器(satellite television receivers)、電壓轉換器(voltage converters)或雷達設備(radar equipment)等高頻電子產品。然而，目前的高電子遷移率電晶體的性能亟須進一步提昇。
因此，在此技術領域中，有需要一種高電子遷移率電晶體，以改善上述缺點。
本發明之一實施例係提供一種半導體裝置。上述半導體裝置包括一基板、一第一III-V族化合物層、一第二III-V族化合物層、一源極、一汲極和一閘極堆疊結構；上述第一III-V族化合物層設置於上述基板上；上述第二III-V族化合物層設置 於上述第一III-V族化合物層上；上述源極和上述汲極設置於上述第二III-V族化合物層的相對側邊界上；上述閘極堆疊結構設置於上述第二III-V族化合物層上，其中上述閘極堆疊結構包括一第一閘極和一第二閘極，上述第一閘極設置於上述第二III-V族化合物層上；上述第二閘極設置於上述第一閘極上且與上述第一閘極電性絕緣，其中上述第二閘極電性耦接至上述源極。
本發明之另一實施例係提供一種半導體結構。上述半導體結構包括一反相器、一半導體裝置和一接面場效電晶體，上述反相器設置於一基板上，其中上述反相器具有一輸入端和一輸出端；上述半導體裝置，包括一基板、一第一III-V族化合物層、一第二III-V族化合物層、一源極、一汲極和一閘極堆疊結構；上述第一III-V族化合物層設置於上述基板上；上述第二III-V族化合物層設置於上述第一III-V族化合物層上；上述源極物和上述汲極物設置於上述第二III-V族化合物層的相對側邊界上；上述閘極堆疊結構，設置於上述第二III-V族化合物層上，其中上述閘極堆疊結構包括一第一閘極和一第二閘極，上述第一閘極設置於上述第二III-V族化合物層上；上述第二閘極設置於上述第一閘極上且與上述第一閘極電性絕緣，其中上述第二閘極電性耦接至上述源極和上述反相器的上述輸出端；上述接面場效電晶體的一閘極和一汲極電性耦接至上述半導體裝置的上述源極，其中上述接面場效電晶體的一源極耦接至一接地端。
200‧‧‧基板
200A、200B、200C、200D‧‧‧主動區
201‧‧‧淺溝槽隔離物
301‧‧‧深溝槽隔離物
202‧‧‧緩衝層
204‧‧‧第一III-V族化合物層
205‧‧‧頂面
206‧‧‧第二III-V族化合物層
207‧‧‧側邊界
208‧‧‧二維電子氣薄層
210‧‧‧源極
212‧‧‧汲極
214‧‧‧第一閘極介電層
216‧‧‧第一閘極
218‧‧‧第二閘極介電層
220‧‧‧第二閘極
222‧‧‧閘極堆疊結構
224、226‧‧‧導線
230A、230B‧‧‧N型井區
230C‧‧‧P型井區
232、234‧‧‧閘極
236A、236B、236C‧‧‧P型重摻雜區
238A、238B、238C、238D‧‧‧N型重摻雜區
310‧‧‧P型金氧半導體場效電晶體
320‧‧‧N型金氧半導體場效電晶體
330‧‧‧接面場效電晶體
500‧‧‧半導體裝置
550‧‧‧反相器
600A、600B‧‧‧半導體結構
Vin‧‧‧輸入端
Vout‧‧‧輸出端
Vd‧‧‧汲極操作電壓
Vdd‧‧‧電源驅動電壓
GND‧‧‧接地端
第1圖顯示本發明一些實施例之半導體裝置之剖面示意圖。
第2A圖顯示本發明一些實施例之半導體裝置之剖面示意圖。
第2B圖顯示第2A圖的等效電路示意圖。
第2C圖顯示本發明一些實施例之半導體裝置之等效電路示意圖。
為了讓本發明之目的、特徵、及優點能更明顯易懂，下文特舉實施例，並配合所附圖示，做詳細之說明。本發明說明書提供不同的實施例來說明本發明不同實施方式的技術特徵。其中，實施例中的各元件之配置係為說明之用，並非用以限制本發明。且實施例中圖式標號之部分重複，係為了簡化說明，並非意指不同實施例之間的關聯性。
本發明實施例係提供一種半導體裝置，例如為一種增強型高電子遷移率電晶體(enhancement mode(E-mode)high electron mobility transistor(HEMT))。本發明實施例之半導體裝置利用快閃記憶體的閘極堆疊做為閘極結構，以提升高電子遷移率電晶體的臨界電壓(threshold voltage)做為增強型電晶體。
第1圖顯示本發明一些實施例之半導體裝置500之剖面示意圖。如第1圖所示，在本發明一些實施例中，半導體裝置500例如為一種增強型高電子遷移率電晶體(E-mode HEMT)。上述半導體裝置500包括一基板200、一第一III-V族化 合物層204、一第二III-V族化合物層206、一源極210、一汲極212和一閘極堆疊結構222。
在本發明一些實施例中，上述基板200可為矽基板，其可具有(111)結晶方向。在本發明其他實施例中，可利用鍺化矽(SiGe)、塊狀半導體(bulk semiconductor)、應變半導體(strained semiconductor)、化合物半導體(compound semiconductor)，或其他常用之半導體基板做為基板200。在本發明一些實施例中，可利用P型摻質摻雜基板200，而使基板200之摻雜濃度為約1014-1017/cm3。
如第1圖所示，本發明一些實施例之半導體裝置500可包括設置於基板200上方的一緩衝層202。緩衝層202可用於減少基板200與之後形成的III-V族化合物層之間因晶格錯位(dislocation)而造成的缺陷。在本發明一些實施例中，緩衝層202可包括例如由AlN晶核層形成的單一層結構或由一AlN晶核層和一AlGaN過渡層形成的之多層結構。
如第1圖所示，半導體裝置500的第一III-V族化合物層204係設置於基板200上，且第二III-V族化合物層206係設置於第一III-V族化合物層204上。在本發明一些實施例中，第一III-V族化合物層204的頂面205直接接觸第二III-V族化合物層206，且第二III-V族化合物層206覆蓋第一III-V族化合物層204的頂面205的一部分。
在本發明一些實施例中，第一III-V族化合物層204和第二III-V族化合物層206由週期表上第III-V族的元素所形成的化合物所構成，但彼此之間具有不同的組成。舉例來說， 第一III-V族化合物層204和第二III-V族化合物層206包括具有不同能帶隙(band gap)的氮化物層。舉例來說，第一III-V族化合物層204包括GaN層，而第二III-V族化合物層206包括AlxGa1-xN層，其中0<x
Figure TWI677092B_D0001
1。在本發明一些實施例中，第一III-V族化合物層204可為一未摻雜(undoped)III-V族化合物層，第二III-V族化合物層206可為一摻雜(doped)III-V族化合物層或一未摻雜(undoped)III-V族化合物層。在本實施例中，第一III-V族化合物層204可為未摻雜GaN層，第二III-V族化合物層206可為未摻雜AlxGa1-xN層。
由於第一III-V族化合物層204和第二III-V族化合物層206具有不同能帶隙(band gap)，因此在做為相對窄的能帶隙通道層(non-doped relatively narrow bandgap channel layer)之第一III-V族化合物層204及做為相對寬的能帶隙n型施子供給層(relatively wide bandgap n-type donor supply layer)之第二III-V族化合物層206的接面處(位置同第一III-V族化合物層204的頂面205)形成一異質接面(heterojunction)，其可以做為半導體裝置500的一通道區(channel region)。
在本發明一些實施例中，當第一III-V族化合物層204為GaN層時，可使用含鎵的前驅物以及含氮的前驅物，藉由有機金屬氣相磊晶法(metal organic vapor phase epitaxy；MOVPE)之磊晶成長製程成長第一III-V族化合物層204。舉例來說，含鎵的前驅物包括三甲基鎵(trimethylgallium；TMG)、三乙基鎵(triethylgallium；TEG)或其他合適的化學品。舉例來說，含氮的前驅物包含氨(ammonia；NH3)、叔丁胺 (tertiarybutylamine；TBAm)、苯肼(phenyl hydrazine)或其他合適的化學品。
在本發明一些實施例中，當第二III-V族化合物層206為AlxGa1-xN層時，可使用含鋁的前驅物、含鎵的前驅物以及含氮的前驅物，藉由有機金屬氣相磊晶法(MOVPE)磊晶之磊晶成長製程成長第二III-V族化合物層206。舉例來說，含鋁的前驅物包括三甲基鋁(trimethylaluminum；TMA)、三乙基鋁(triethylaluminum；TEA)或其他合適的化學品。舉例來說，含鎵的前驅物包括三甲基鎵(TMG)、三乙基鎵(TEG)或其他合適的化學品。舉例來說，含氮的前驅物包括氨(NH3)、叔丁胺(TBAm)、苯肼(phenyl hydrazine)或其他合適的化學品。
在本發明一些實施例中，形成於基板200上且彼此鄰接的第一III-V族化合物層204和第二III-V族化合物層206也會因為能帶差異(band gap discontinuity)與壓電效應(piezo-electric effect)所產生之極化方向，而沿著接近第一III-V族化合物層204和第二III-V族化合物層206的一界面上(或接面處，位置同第一III-V族化合物層204的頂面205)形成具有高移動傳導電子的二維電子氣(two-dimensional electron gas，2DEG)薄層208，二維電子氣薄層208係形成一載子通道。
在本發明一些實施例中，當半導體裝置500的第一III-V族化合物層204和第二III-V族化合物層206為氮化物層且閘極偏壓為0伏(V)時會形成二維電子氣薄層208，而上述半導體裝置500可為一空乏型元件(depletion mode device)，又可稱為常開(normally on)元件。
如第1圖所示，半導體裝置500的源極210和汲極212，設置於第二III-V族化合物層206的相對側邊界207上。並且，源極210和汲極分別接觸從於第二III-V族化合物層206暴露出來的第一III-V族化合物層204的頂面205的不同部分。換句話說，源極210接觸第一III-V族化合物層的一部分頂面205和第二III-V族化合物層206的一個側邊界207，而汲極212接觸第一III-V族化合物層204的另一部分頂面205和第二III-V族化合物層206的另一個側邊界207。在本發明一些實施例中，源極210和汲極212與二維電子氣薄層208電性連接。
在本發明一些其他實施例中，半導體裝置500的源極210和汲極212的底部可與二維電子氣薄層208的底部(即二維電子氣薄層208的虛線處)對齊。或者，半導體裝置500的源極210和汲極212的底部可與第二III-V族化合物層206的頂部對齊，而第二III-V族化合物層206的相對側邊界則與第一III-V族化合物層204耦接。
在本發明一些實施例中，源極210和汲極212包括一種或一種以上的導電材料。舉例來說，源極210和汲極212包括金屬，其係選自於由鈦、鋁、鎳與金所組成的群組。可利用物理氣相沈積法(physical vapor deposition，PVD)、化學氣相沉積法(chemical vapor deposition，CVD)、原子層沉積法(atomic layer deposition，ALD)、塗佈、濺鍍或其他適合的技術形成源極210和汲極212。
如第1圖所示，半導體裝置500的閘極堆疊結構222，設置於第二III-V族化合物層206的頂面上，位於源極210和汲極 212之間且與源極210和汲極212隔開。在本發明一些實施例中，閘極堆疊結構222包括從下而上依序堆疊的一第一閘極介電層214、一第一閘極216、一第二閘極介電層218和一第二閘極220。第一閘極216設置於第二III-V族化合物層206上，第二閘極220設置於第一閘極216上方且與第一閘極216電性絕緣，第一閘極介電層214設置於第一閘極216和第二III-V族化合物層206之間且與第一閘極216和第二III-V族化合物層206接觸，而第二閘極介電層218設置於第一閘極216和第二閘極220之間且與第一閘極216和第二閘極220接觸。另外，第二閘極220可藉由一導線224電性耦接至源極210，而汲極212可藉由一導線226電性耦接至一汲極操作電壓(Vd)(圖未顯示)。
在本發明一些實施例中，第一閘極216和第二閘極220可為相同或不同的材料。舉例來說，第一閘極216和第二閘極可包括一或多層導體材料，如多晶矽(polysilicon)、鋁、銅、鈦、鉭、鎢、鈷、鉬、氮化鉭、鎳矽化物(nickel silicide)、鈷矽化物(cobalt silicide)、氮化鈦、氮化鎢、TiAl、TiAlN、TaCN、TaC、TaSiN、金屬合金或其他適合的材料。在本實施例中，第一閘極216和第二閘極220可為多晶矽。
在本發明一些實施例中，第一閘極介電層214和第二閘極介電層218可為相同或不同的材料。舉例來說，第一閘極介電層214和第二閘極介電層218可包括一或多層介電材料，例如氧化矽、氮化矽、高介電常數介電材料或其他適合的介電材料。高介電常數介電材料例如可包括氧化鉿(HfO2)、氧化矽鉿(HfSiO)、氮氧化矽鉿(HfSiON)、氧化鉭鉿(HfTaO)、氧化鈦 鉿(HfTiO)、氧化鋯鉿(HfZrO)、氧化鋯(ZrO)、氧化鋁(Al2O3)、氧化鈦、二氧化鉿-氧化鋁(HfO2-Al2O3)合金、前述之組合或其他適合的高介電常數介電材料。在本實施例中，第一閘極介電層214和第二閘極介電層218可為氧化鋁(Al2O3)。
在本發明一些實施例中，半導體裝置500的閘極堆疊結構222可類似於快閃記憶體元件(flash memory device)的閘極堆疊結構。如第1圖所示，閘極堆疊結構222的第一閘極216可分別藉由第一閘極介電層214與第二III-V族化合物層206電性絕緣，且藉由第二閘極介電層218與第二閘極220電性絕緣。因此，第一閘極216為電性浮接(electrically floating)，且可視為一浮接閘極(floating gate，FG)。另外，位於第一閘極216的正上方且藉由第二閘極介電層218與第一閘極216隔開的第二閘極220可視為一控制閘極(control gate，CG)。另外，第一閘極介電層214可視為穿隧氧化層(tunnel oxide layer)，而第二閘極介電層218可視為阻擋氧化層(blocking oxide)。因此，施加在第一閘極216的電壓大體上可藉由第一閘極216和第二閘極220之間的電容耦合率(capacitor coupling ratio)決定。
在本發明一些實施例中，半導體裝置500可藉由將閘極堆疊結構222的第二閘極(控制閘極)220電性耦接至源極物210的方式形成增強型(E-mode)電晶體，例如為增強型高電子遷移率電晶體(E-mode HEMT)。以下利用公式說明當本發明實施例之半導體裝置500為開啟(turn-on)時，施加於閘極堆疊結構222的電壓(VG)和源極物210的電壓(VS)需滿足式(1)：
Figure TWI677092B_D0002
其中VG等同於為施加於閘極堆疊結構222的第一閘極(浮接閘極)216的電壓VFG，VS為施加於源極物210的電壓，Vt為半導體裝置500的臨界電壓(threshold voltage)。
另外，施加於閘極堆疊結構222的第二閘極220的電壓(VCG)係取決於耦合係數(coupling ratio)，如式(2)所示：VFG=αCGvCG+αDVD+αSvS+αBVB 式(2)
，其中αCG、αD、αS、αB分別為控制閘極耦合係數(CG coupling ratio)、汲極耦合係數(drain coupling ratio)、源極耦合係數(source coupling ratio)和基板耦合係數(bulk coupling ratio)，VFG、VCG、VD、VS、VB分別為施加於第一閘極(浮接閘極)216、第二閘極(控制閘極)220、汲極212、源極210和基板200的電壓。
在本發明一些實施例中，假設汲極耦合係數(αD)和源極耦合係數(αS)的數值為0，且施加於基板200的電壓(VB)為0伏特(V)，此時施加於閘極堆疊結構222的第一閘極216的電壓(VFG)係取決於施加於閘極堆疊結構222的第二閘極220的電壓(VCG)及控制閘極耦合係數(αCG)，意即式(2)會近似於VFG=αCGVCG。且將第二閘極(控制閘極)220電性耦接至源極210的條件(VCG=VS)代入式(1)會得到式(3)：
Figure TWI677092B_D0003
在本發明一些實施例中，假設半導體裝置500的控制閘極耦合係數(αCG)為10%，且半導體裝置500的臨界電壓(Vt)為-4V代入式(3)會得到：-0.9*VCG
Figure TWI677092B_D0004
-4，因而得知當本發明實施例之半導體裝置500為開啟(turn-on)時，VCG
Figure TWI677092B_D0005
4.4V。
依據前述條件，假設施加於第二閘極(控制閘極)220的電壓(VCG)為5V，則施加於第一閘極(浮接閘極)216的電壓(VFG)為0.5V，而施加於源極的電壓(VS)也為5V，則施加於第一閘極216(浮接閘極)的電壓和施加於源極的電壓的差值(VFG-VS)會小於半導體裝置的臨界電壓(Vt)(VFG-VS=-4.5(V)
Figure TWI677092B_D0006
-4(V))。此時半導體裝置500為關閉狀態(turn off state)。因此，可調整半導體裝置500的閘極堆疊結構222的耦合係數(coupling ratio)(例如控制閘極耦合係數(αCG))，且將第二閘極(控制閘極)220電性耦接至源極210，使半導體裝置500成為增強型(E-mode)電晶體，當電壓施加在閘極堆疊上產生適當的偏壓時，才會開啟增強型電晶體，此種配置的半導體裝置500也可視為增強型高電子遷移率電晶體(E-mode HEMT)。
第2A圖顯示本發明一些實施例之半導體結構600A之剖面示意圖，其包括第1圖的半導體裝置500。第2B圖顯示第2A圖的等效電路示意圖。在本發明一些實施例中，半導體結構600A包括形成於基板200上的一反相器550、一半導體裝置500(其結構同第1圖所示，且做為增強型電晶體)和一接面場效電晶體(junction field effect transistor，JFET)330。並且，基板200可為一P型基板，且可包括複數個主動區200A、200B、200C和200D，主動區200A、200B和200C之間利用複數個淺溝槽隔離物201彼此隔開，而主動區200C和200D之間利用深溝槽隔離物301彼此隔開。深溝槽隔離物301的深度係設計大於淺溝槽隔離物201的深度，以有效電性隔離半導體裝置500和接面場效電晶體330。在本發明一些實施例中，可利用P型摻質摻雜基板200， 而使基板200之摻雜濃度為約1014-1017/cm3。
如第2A、2B圖所示，半導體結構600A的反相器550可設置於基板200上且位於基板200的主動區200A和200B中。並且，反相器550具有一輸入端Vin和一輸出端Vout。在本發明一些實施例中，反相器550包括一P型金氧半導體場效電晶體310和一N型金氧半導體場效電晶體320。P型金氧半導體場效電晶體310可形成於基板200的主動區200A的一N型井區230A中，其可包括一閘極232和P型重摻雜區(P+ doped region)236A和236B。P型金氧半導體場效電晶體310的閘極232位於主動區200A中的基板200上方。P型金氧半導體場效電晶體310的P型重摻雜區236A和236B位於N型井區230上且設置於閘極232的相對兩側，且P型重摻雜區236A和236B可分別視為P型金氧半導體場效電晶體310的源極236A和汲極236B。在本發明一些實施例中，N型井區230A的摻雜濃度可為約1016-1019/cm3，P型重摻雜區236A和236B的摻雜濃度可為約1019-1021/cm3。
如第2A、2B圖所示，反相器550的N型金氧半導體場效電晶體320可形成於基板200的主動區200B的一P型井區230C中，其可包括一閘極234、N型重摻雜區(N+ doped region)238A和238B。N型金氧半導體場效電晶體320的閘極234位於主動區200B中的(P型)基板200上方。N型金氧半導體場效電晶體320的N型重摻雜區238A和238B位於P型井區230C上且設置於閘極234的相對兩側，且N型重摻雜區238A和238B可分別視為N型金氧半導體場效電晶體320的源極238A和汲極238B。在本發明一些實施例中，N型重摻雜區238A和238B的摻雜濃度 可為約1019-1021/cm3。
在本發明一些實施例中，P型金氧半導體場效電晶體310的閘極232電性耦接至N型金氧半導體電晶體320的閘極234且一起做為反相器550的輸入端Vin。並且，P型金氧半導體場效電晶體310的源極(P型重摻雜區)236A電性耦接至一電源驅動電壓Vdd。另外，P型金氧半導體場效電晶體310的汲極(P型重摻雜區)236B電性耦接至N型金氧半導體電晶體320的汲極(N型重摻雜區)238B且做為反相器550的輸出端Vout。而且，N型金氧半導體電晶體320的源極(N型重摻雜區)238A係電性耦接至接地端GND，並於第2A、2B圖中之基板200的底部利用接地符號及英文GND表示。
如第2A、2B圖所示，半導體結構600A的半導體裝置500(增強型電晶體)設置於基板200的主動區200D中。在本發明一些實施例中，做為增強型電晶體的半導體裝置500包括第一III-V族化合物層204、第二III-V族化合物層206、閘極堆疊結構222、源極210和汲極212。第一III-V族化合物層204設置於基板200上方且位於緩衝層202上。第二III-V族化合物層206設置於第一III-V族化合物層204上。源極210和汲極212設置於第二III-V族化合物層206的相對側邊界207上。閘極堆疊結構222設置於該第二III-V族化合物層206上且位於源極物210和汲極物212之間。閘極堆疊結構222包括從下而上依序堆疊的一第一閘極介電層214、一第一閘極216、一第二閘極介電層218和一第二閘極220。第一閘極216設置於第二III-V族化合物層206上，第二閘極220設置於第一閘極216上方且與第一閘極216電性絕 緣，第一閘極介電層214設置於第一閘極216和第二III-V族化合物層206之間且與第一閘極216和第二III-V族化合物層206接觸，而第二閘極介電層218設置於第一閘極216和第二閘極220之間且與第一閘極216和第二閘極220接觸。
在本發明一些實施例中，半導體結構600A的半導體裝置500的第二閘極220電性耦接至源極210和反相器550的輸出端Vout。半導體裝置500的汲極212電性耦接至一汲極操作電壓Vd。並且，半導體裝置500做為一增強型高電子遷移率電晶體。
如第2A、2B圖所示，半導體結構600A的接面電晶體330設置於基板200的主動區200C中。在本發明一些實施例中，接面場效電晶體330包括一N型井區230B、一P型摻雜區236C和N型摻雜區238C、238D。接面場效電晶體330的N型井區230B設置於基板200上，接面電晶體320的P型摻雜區236C、N型摻雜區238C、238D設置於N型井區230B上。並且，N型摻雜區238C、238D位於P型摻雜區236C的相對側且與P型摻雜區236C彼此隔開。
在本發明一些實施例中，接面場效電晶體330的P型摻雜區236C做為接面場效電晶體330的閘極，而N型摻雜區238C、238D分別做為接面場效電晶體330的汲極和源極。如第2A、2B圖所示，接面場效電晶體330的P型摻雜區236C(閘極)和N型摻雜區238C(汲極)一起電性耦接至半導體裝置500的源極210。另外，接面場效電晶體330的N型摻雜區238D(源極)係電性耦接至接地端GND，並於第2A、2B圖中之基板200的底部 利用接地符號及英文GND表示。
在本發明一些實施例中，接面場效電晶體330的N型井區230B與N型井區230A同時形成且具有相同或類似的摻雜濃度。另外，接面場效電晶體330的P型摻雜區236C(閘極)可與P型重摻雜區236A和236B同時形成且具有相同或類似的摻雜濃度。此外，N型摻雜區238C、238D(汲極和源極)可與N型重摻雜區238A和238B同時形成且具有相同或類似的摻雜濃度。
以下利用第2B圖說明半導體結構600A的作動方式。當對反相器550的輸入端Vin施加電壓”1”(意即邏輯1的電壓電位)時，反相器550的輸出端Vout係輸出電壓”0”(意即邏輯0的電壓電位)，半導體裝置閘極222和源極210及接面場效電晶體330的閘極236C都是”0”的電壓輸入。所以，此時半導體裝置500為開的狀態(on-state)，接面場效電晶體330也是導通狀態，電流就從半導體裝置500的汲極212流到接面場效電晶體330的源極238D。當對反相器550的輸入端Vin施加電壓”0”時，反相器550的輸出端Vout係輸出電壓”1”，半導體裝置500的閘極222和源極210及接面場效電晶體330的閘極236C都是”1”的電壓輸入。所以，此時半導體裝置500為關的狀態(off-state)，接面場效電晶體330也是被截止不導通的狀態，此時半導體裝置500和半導體裝置500沒有電流流通。如第2A、2B圖所示，在本發明一些實施例中，藉由半導體結構600A的反相器550、半導體裝置500和接面場效電晶體330的電性連接方式，可將半導體裝置500做為一增強型高電子遷移率電晶體。由於半導體裝置500的閘極 (閘極結構222的第二閘極220)電性耦接至源極210，當對閘極施加偏壓時，也會對源極施加相同的偏壓。對源極施加的上述偏壓可能會導致對基板200的漏電(leakage)。在本實施例中(例如依據前述對半導體裝置500的汲極耦合係數(αD)、源極耦合係數(αS)、施加於基板200的電壓(VB)、控制閘極耦合係數(αCG)和臨界電壓假設值)，對源極施加的偏壓低於5V時可忽略對基板200的漏電。當半導體結構600A的接面場效電晶體330的N型摻雜區238C(汲極)電性耦接至半導體裝置500的源極210時，接面場效電晶體330可用於夾止(pinch)和阻擋(block)流至半導體裝置500源極的電流。且當對半導體裝置500的源極210施加的偏壓為0V時，半導體裝置500為常開(normally on)狀態，而接面電晶體330也為常開(normally on)狀態。流至半導體裝置500源極的電流會被接面電晶體320傳導至接地端GND而不會影響元件性能，因而可降低漏電。
第2C圖顯示本發明實施例之半導體結構600B的等效電路示意圖。半導體結構600B與第2B圖所示之半導體結構600A相同或類似的元件在此不再重複敘述。半導體結構600B和半導體結構600A之間的不同處為：半導體結構600B不包括接面場效電晶體330。因此，半導體結構600B的半導體裝置500的源極210為直接電性耦接至接地端GND。相對於半導體結構600A，半導體結構600B的電路結構比較單純。如果當對閘極施加偏壓時，也會對源極施加相同的偏壓。當對源極施加的上述偏壓所導致對基板200的漏電(leakage)可忽略時，即可使用例如半導體結構600B的電路結構。
本發明實施例係提供一種半導體裝置及半導體結構。本發明實施例的半導體裝置例如為一種增強型高電子遷移率電晶體(E-mode HEMT)。本發明實施例之半導體裝置利用快閃記憶體的閘極堆疊(包括控制閘極和浮接閘極)做為閘極結構，且將半導體裝置的閘極結構和源極彼此電性耦接，以提升高電子遷移率電晶體的臨界電壓(threshold voltage)做為增強型電晶體。在本發明一些實施例中，半導體結構可由一反相器、一半導體裝置和一接面場效電晶體構成。上述半導體結構可將半導體裝置的源極耦接至接面場效電晶體的汲極，且一起電性耦接至一反相器的輸出端。藉由連接方式，可將半導體裝置做為增強型高電子遷移率電晶體，接面電晶體可用於夾止(pinch)和阻擋(block)流至半導體裝置源極的電流。且當對半導體裝置的源極施加的偏壓為0V時，半導體裝置為常開(normally on)狀態，而接面場效電晶體330也為常開(normally on)狀態。流至半導體裝置源極的電流會被接面電晶體傳導至接地端而不會影響元件性能，因而可降低半導體裝置的漏電。
雖然本發明已以實施例揭露於上，然其並非用以限定本發明，任何熟習此項技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。

Claims (10)

  1. 一種半導體裝置，包括：一基板；一第一III-V族化合物層，設置於該基板上；一第二III-V族化合物層，設置於該第一III-V族化合物層上；一源極和一汲極，設置於該第二III-V族化合物層的相對側邊界上；以及一閘極堆疊結構，設置於該第二III-V族化合物層上，其中該閘極堆疊結構包括：一第一閘極，設置於該第二III-V族化合物層上；以及一第二閘極，設置於該第一閘極上且與該第一閘極電性絕緣，其中該第二閘極電性耦接至該源極。
  2. 如申請專利範圍第1項所述之半導體裝置，更包括：一緩衝層，設置於該基板和該第一III-V族化合物層之間。
  3. 如申請專利範圍第1項所述之半導體裝置，更包括：一二維電子氣薄層，形成於該第一III-V族化合物層與該第二III-V族化合物層之間的一界面上。
  4. 如申請專利範圍第1項所述之半導體裝置，其中該第一III-V族化合物層包含GaN，該第二III-V族化合物層包含AlxGa1-xN，且0<x1。
  5. 如申請專利範圍第1項所述之半導體裝置，其中該閘極堆疊結構更包括：一第一閘極介電層，設置於該第一閘極和該第二III-V族化合物層之間；以及一第二閘極介電層，設置於該第一閘極和該第二閘極之間。
  6. 如申請專利範圍第5項所述之半導體裝置，其中該第一閘極藉由該第一閘極介電層與該第二III-V族化合物層電性絕緣，且藉由該第二閘極介電層與該第二閘極電性絕緣。
  7. 一種半導體結構，包括：一反相器，設置於一基板上，其中該反相器具有一輸入端和一輸出端；一半導體裝置，包括：一第一III-V族化合物層，設置於該基板上；一第二III-V族化合物層，設置於該第一III-V族化合物層上；一源極和一汲極，設置於該第二III-V族化合物層的相對側邊界上；以及一閘極堆疊結構，設置於該第二III-V族化合物層上，其中該閘極堆疊結構包括：一第一閘極，設置於該第二III-V族化合物層上；以及一第二閘極，設置於該第一閘極上且與該第一閘極電性絕緣，其中該第二閘極電性耦接至該源極和該反相器的該輸出端；以及一接面場效電晶體，其中：該接場效面電晶體的一閘極和一汲極電性耦接至該半導體裝置的一源極；其中該接面場效電晶體的一源極耦接至一接地端。
  8. 如申請專利範圍第7項所述之半導體結構，其中該反相器包括：一P型金氧半導體場效電晶體，其中：該P型金氧半導體場效電晶體的一源極電性耦接至一電源驅動電壓；一N型金氧半導體場效電晶體，其中：該N型金氧半導體場效電晶體的一閘極電性耦接至該P型金氧半導體場效電晶體的一閘極且做為該反相器的該輸入端；該N型金氧半導體場效電晶體的一汲極電性耦接至該P型金氧半導體場效電晶體的一汲極且做為該反相器的該輸出端；該N型金氧半導體場效電晶體的一源極電性耦接至該接地端。
  9. 如申請專利範圍第7項所述之半導體結構，其中該半導體裝置的該汲極電性耦接至一汲極操作電壓。
  10. 如申請專利範圍第7項所述之半導體結構，其中該基板的導電類型為P型，且該接面場效電晶體包括：一N型井區，設置於該基板上；一P型摻雜區，設置於該N型井區上；以及一對N型摻雜區，設置於該N型井區上，且位於該P型摻雜區的相對側。
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