TW200802815A - A novel P-channel flash memory device - Google Patents
A novel P-channel flash memory deviceInfo
- Publication number
- TW200802815A TW200802815A TW095122357A TW95122357A TW200802815A TW 200802815 A TW200802815 A TW 200802815A TW 095122357 A TW095122357 A TW 095122357A TW 95122357 A TW95122357 A TW 95122357A TW 200802815 A TW200802815 A TW 200802815A
- Authority
- TW
- Taiwan
- Prior art keywords
- novel
- memory device
- flash memory
- channel flash
- sige
- Prior art date
Links
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
A novel P-channel Flash device with SiGe or Ge surface channel is proposed to improve programming speed under BBHE operation. In addition, silicon cap layer is introduced optionally to improve the electrical characteristics of the interface between the tunneling oxide layer and SiGe or Ge layer. In addition to high speed application, this new device can also be programmed at low voltage to maintain the same programming speed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095122357A TWI299563B (en) | 2006-06-21 | 2006-06-21 | A novel p-channel flash memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095122357A TWI299563B (en) | 2006-06-21 | 2006-06-21 | A novel p-channel flash memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200802815A true TW200802815A (en) | 2008-01-01 |
TWI299563B TWI299563B (en) | 2008-08-01 |
Family
ID=44765489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095122357A TWI299563B (en) | 2006-06-21 | 2006-06-21 | A novel p-channel flash memory device |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI299563B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI677092B (en) * | 2017-12-20 | 2019-11-11 | 新唐科技股份有限公司 | Semiconductor device and semiconductor structure |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8817543B2 (en) * | 2012-07-11 | 2014-08-26 | Ememory Technology Inc. | Flash memory |
-
2006
- 2006-06-21 TW TW095122357A patent/TWI299563B/en active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI677092B (en) * | 2017-12-20 | 2019-11-11 | 新唐科技股份有限公司 | Semiconductor device and semiconductor structure |
US11342439B2 (en) | 2017-12-20 | 2022-05-24 | Nuvoton Technology Corporation | III-V field effect transistor and semiconductor structure |
Also Published As
Publication number | Publication date |
---|---|
TWI299563B (en) | 2008-08-01 |
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