TW200802815A - A novel P-channel flash memory device - Google Patents

A novel P-channel flash memory device

Info

Publication number
TW200802815A
TW200802815A TW095122357A TW95122357A TW200802815A TW 200802815 A TW200802815 A TW 200802815A TW 095122357 A TW095122357 A TW 095122357A TW 95122357 A TW95122357 A TW 95122357A TW 200802815 A TW200802815 A TW 200802815A
Authority
TW
Taiwan
Prior art keywords
novel
memory device
flash memory
channel flash
sige
Prior art date
Application number
TW095122357A
Other languages
Chinese (zh)
Other versions
TWI299563B (en
Inventor
Chi-Chao Wang
Kuei-Shu Changliao
Original Assignee
Nat Univ Tsing Hua
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Univ Tsing Hua filed Critical Nat Univ Tsing Hua
Priority to TW095122357A priority Critical patent/TWI299563B/en
Publication of TW200802815A publication Critical patent/TW200802815A/en
Application granted granted Critical
Publication of TWI299563B publication Critical patent/TWI299563B/en

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

A novel P-channel Flash device with SiGe or Ge surface channel is proposed to improve programming speed under BBHE operation. In addition, silicon cap layer is introduced optionally to improve the electrical characteristics of the interface between the tunneling oxide layer and SiGe or Ge layer. In addition to high speed application, this new device can also be programmed at low voltage to maintain the same programming speed.
TW095122357A 2006-06-21 2006-06-21 A novel p-channel flash memory device TWI299563B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095122357A TWI299563B (en) 2006-06-21 2006-06-21 A novel p-channel flash memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095122357A TWI299563B (en) 2006-06-21 2006-06-21 A novel p-channel flash memory device

Publications (2)

Publication Number Publication Date
TW200802815A true TW200802815A (en) 2008-01-01
TWI299563B TWI299563B (en) 2008-08-01

Family

ID=44765489

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122357A TWI299563B (en) 2006-06-21 2006-06-21 A novel p-channel flash memory device

Country Status (1)

Country Link
TW (1) TWI299563B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677092B (en) * 2017-12-20 2019-11-11 新唐科技股份有限公司 Semiconductor device and semiconductor structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8817543B2 (en) * 2012-07-11 2014-08-26 Ememory Technology Inc. Flash memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677092B (en) * 2017-12-20 2019-11-11 新唐科技股份有限公司 Semiconductor device and semiconductor structure
US11342439B2 (en) 2017-12-20 2022-05-24 Nuvoton Technology Corporation III-V field effect transistor and semiconductor structure

Also Published As

Publication number Publication date
TWI299563B (en) 2008-08-01

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