TWI676695B - 遮罩板及成膜方法 - Google Patents

遮罩板及成膜方法 Download PDF

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Publication number
TWI676695B
TWI676695B TW107118376A TW107118376A TWI676695B TW I676695 B TWI676695 B TW I676695B TW 107118376 A TW107118376 A TW 107118376A TW 107118376 A TW107118376 A TW 107118376A TW I676695 B TWI676695 B TW I676695B
Authority
TW
Taiwan
Prior art keywords
substrate
mask
plate
pattern
mask plate
Prior art date
Application number
TW107118376A
Other languages
English (en)
Chinese (zh)
Other versions
TW201912817A (zh
Inventor
三上瞬
Shun Mikami
中尾裕利
Hirotoshi Nakao
田宮慎太郎
Shintarou Tamiya
朝比奈伸一
Shinichi Asahina
Original Assignee
日商愛發科股份有限公司
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商愛發科股份有限公司, Ulvac, Inc. filed Critical 日商愛發科股份有限公司
Publication of TW201912817A publication Critical patent/TW201912817A/zh
Application granted granted Critical
Publication of TWI676695B publication Critical patent/TWI676695B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
TW107118376A 2017-09-01 2018-05-30 遮罩板及成膜方法 TWI676695B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017168211A JP6471200B1 (ja) 2017-09-01 2017-09-01 マスクプレート及び成膜方法
JP2017-168211 2017-09-01

Publications (2)

Publication Number Publication Date
TW201912817A TW201912817A (zh) 2019-04-01
TWI676695B true TWI676695B (zh) 2019-11-11

Family

ID=65356210

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107118376A TWI676695B (zh) 2017-09-01 2018-05-30 遮罩板及成膜方法

Country Status (4)

Country Link
JP (1) JP6471200B1 (ko)
KR (1) KR102132642B1 (ko)
CN (1) CN109423602B (ko)
TW (1) TWI676695B (ko)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002075639A (ja) * 2000-08-29 2002-03-15 Sony Corp パターン形成装置、パターン形成方法、有機電界発光素子ディスプレイの製造装置及び製造方法
JP2005302457A (ja) * 2004-04-09 2005-10-27 Toray Ind Inc 蒸着マスクおよびその製造方法並びに有機電界発光装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4506214B2 (ja) * 2003-03-13 2010-07-21 東レ株式会社 有機電界発光装置およびその製造方法
EP1802177A4 (en) * 2004-09-08 2010-04-14 Toray Industries ORGANIC ELECTROLUMINESCENCE ELEMENT AND METHOD OF MANUFACTURING THEREOF
JP4428285B2 (ja) * 2005-05-16 2010-03-10 セイコーエプソン株式会社 マスク保持構造、成膜方法、及び電気光学装置の製造方法
JP2010085588A (ja) * 2008-09-30 2010-04-15 Sony Corp 光学部品の製造方法および光学部品、並びに表示装置の製造方法および表示装置
WO2013039019A1 (ja) * 2011-09-14 2013-03-21 トヨタ自動車東日本株式会社 光電変換デバイス用電極及び光電変換デバイス
JP2013093278A (ja) 2011-10-27 2013-05-16 Hitachi High-Technologies Corp 有機elデバイス製造装置
JP5825139B2 (ja) * 2012-02-21 2015-12-02 大日本印刷株式会社 蒸着マスクの製造方法
JP5516816B1 (ja) * 2013-10-15 2014-06-11 大日本印刷株式会社 金属板、金属板の製造方法、および金属板を用いて蒸着マスクを製造する方法
CN103695842B (zh) * 2013-12-31 2015-12-09 信利半导体有限公司 一种掩膜板及其制作方法
KR20160035170A (ko) * 2014-09-22 2016-03-31 삼성디스플레이 주식회사 마스크 조립체 및 이를 이용한 증착 장치
CN106884139B (zh) * 2017-03-20 2022-04-26 京东方科技集团股份有限公司 一种蒸镀掩膜版、其制作方法、电磁蒸镀装置及蒸镀方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002075639A (ja) * 2000-08-29 2002-03-15 Sony Corp パターン形成装置、パターン形成方法、有機電界発光素子ディスプレイの製造装置及び製造方法
JP2005302457A (ja) * 2004-04-09 2005-10-27 Toray Ind Inc 蒸着マスクおよびその製造方法並びに有機電界発光装置の製造方法

Also Published As

Publication number Publication date
CN109423602B (zh) 2019-09-20
KR102132642B1 (ko) 2020-07-10
KR20190025510A (ko) 2019-03-11
CN109423602A (zh) 2019-03-05
JP2019044228A (ja) 2019-03-22
TW201912817A (zh) 2019-04-01
JP6471200B1 (ja) 2019-02-13

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