TWI674647B - Chip package array and chip package - Google Patents
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- TWI674647B TWI674647B TW106115539A TW106115539A TWI674647B TW I674647 B TWI674647 B TW I674647B TW 106115539 A TW106115539 A TW 106115539A TW 106115539 A TW106115539 A TW 106115539A TW I674647 B TWI674647 B TW I674647B
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Abstract
一種晶片封裝陣列,包括多個晶片封裝體。晶片封裝體適於陣列排列以形成該晶片封裝陣列。各晶片封裝體包括重佈線路結構、支撐結構、晶片以及封膠。支撐結構配置於重佈線路結構並具有開口。晶片配置於重佈線路結構並位於開口中。封膠位於開口與晶片之間,其中封膠填充於開口與晶片之間。晶片與支撐結構分別與重佈線路結構連接。一種晶片封裝體也提供於此。A chip package array includes a plurality of chip packages. The chip package is suitable for array arrangement to form the chip package array. Each chip package includes a redistribution circuit structure, a support structure, a chip, and a sealant. The supporting structure is disposed in the redistribution circuit structure and has an opening. The chip is disposed in the redistribution circuit structure and is located in the opening. The sealant is located between the opening and the wafer, and the sealant is filled between the opening and the wafer. The wafer and the support structure are respectively connected to the redistribution circuit structure. A chip package is also provided here.
Description
本發明是有關於一種晶片封裝結構,且特別是有關於一種晶片封裝陣列以及晶片封裝體。The present invention relates to a chip package structure, and more particularly, to a chip package array and a chip package.
在半導體產業中,積體電路(Integrated Circuits, IC)的生產,主要可分為三個階段:積體電路設計(IC design)、積體電路的製作(IC process)及積體電路的封裝(IC package)等。因此,裸晶片(die)係經由晶圓(wafer)製作、電路設計、光罩製作以及切割晶圓等步驟而完成,而裸晶片則經由打線接合(wire bonding)或覆晶接合(flip chip bonding)等方式,將裸晶片電性連接至承載器,例如導線架或介電層等,使得裸晶片之接合墊將可重佈線路至晶片之周緣或晶片之主動表面的下方。接著,再以封裝膠體(molding compound)包覆裸晶片,以保護裸晶片。In the semiconductor industry, the production of integrated circuits (ICs) can be divided into three stages: integrated circuit design (IC design), integrated circuit manufacturing (IC process), and integrated circuit packaging ( IC package) and so on. Therefore, the die is completed through wafer fabrication, circuit design, photomask fabrication, and wafer dicing, and the bare wafer is processed through wire bonding or flip chip bonding. ) And other methods to electrically connect the bare chip to a carrier, such as a lead frame or a dielectric layer, so that the bonding pads of the bare chip can be rerouted to the periphery of the chip or below the active surface of the chip. Then, the bare wafer is covered with a molding compound to protect the bare wafer.
本發明提供一種晶片封裝陣列,能提升結構強度且降低其製程的生產成本。The invention provides a chip package array, which can improve the structural strength and reduce the production cost of its manufacturing process.
本發明提供一種晶片封裝體,能提升結構強度且降低其製程的生產成本。The invention provides a chip package, which can improve the structural strength and reduce the production cost of its manufacturing process.
本發明另提出一種晶片封裝陣列,包括多個晶片封裝體。晶片封裝體適於陣列排列以形成該晶片封裝陣列。各晶片封裝體包括重佈線路結構、支撐結構、晶片以及封膠。支撐結構配置於重佈線路結構並具有開口。晶片配置於重佈線路結構並位於開口中。封膠位於開口與晶片之間,其中封膠填充於開口與晶片之間,晶片與支撐結構分別與重佈線路結構連接。The present invention further provides a chip package array including a plurality of chip packages. The chip package is suitable for array arrangement to form the chip package array. Each chip package includes a redistribution circuit structure, a support structure, a chip, and a sealant. The supporting structure is disposed in the redistribution circuit structure and has an opening. The chip is disposed in the redistribution circuit structure and is located in the opening. The sealant is located between the opening and the wafer, wherein the sealant is filled between the opening and the wafer, and the wafer and the support structure are respectively connected to the redistribution circuit structure.
本發明再提出一種晶片封裝體,包括重佈線路結構、支撐結構、晶片以及封膠。支撐結構配置於重佈線路結構並具有開口。晶片配置於重佈線路結構並位於開口中。封膠位於開口與晶片之間,其中封膠填充於開口與晶片之間,晶片與支撐結構分別與重佈線路結構連接。The present invention further provides a chip package, which includes a redistribution circuit structure, a support structure, a chip, and a sealant. The supporting structure is disposed in the redistribution circuit structure and has an opening. The chip is disposed in the redistribution circuit structure and is located in the opening. The sealant is located between the opening and the wafer, wherein the sealant is filled between the opening and the wafer, and the wafer and the support structure are respectively connected to the redistribution circuit structure.
基於上述,在本發明的晶片封裝製程中,由於晶片封裝陣列的各別晶片封裝體的外圍區域配置有支撐結構,因此,能改善封裝過程中發生的翹曲,並且能提升晶片封裝陣列的結構強度且降低其製程的生產成本,進而增加晶片封裝體的產量。除此之外,支撐結構的配置也可以改善各別晶片封裝體的整體結構強度。Based on the above, in the chip packaging process of the present invention, since a support structure is arranged in the peripheral region of each chip package body of the chip package array, warpage occurring during the packaging process can be improved, and the structure of the chip package array can be improved. The strength and the production cost of the manufacturing process are reduced, thereby increasing the output of the chip package. In addition, the configuration of the support structure can also improve the overall structural strength of each chip package.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.
請參考圖1A、圖2A及圖3A,其中圖1A及圖2A的結構的完整狀態如圖3A所示,意即圖3A的結構的局部呈現於圖1A及圖2A。在本實施例的晶體封裝製程中,提供支撐結構120及承載板110。支撐結構120配置於承載板110上。支撐結構120具有多個開口122。詳細而言,在本實施例中,支撐結構120為一個網狀結構,例如是一個網狀的加強支撐件。如此一來,藉由具有多個開口的支撐結構及承載板可改善封裝過程中發生的翹曲,特別是對於尺寸較大的扇出型晶圓級封裝(Fan-out wafer level package, FOWLP)或扇出型面板級封裝(Fan-out panel level package, FOPLP),其效果更加明顯。此外,藉由具有多個開口122的支撐結構120及承載板110能提升晶片封裝陣列50(見於圖3C)的結構強度且降低其製程的生產成本,進而增加晶片封裝體100(見於圖1F及圖2F)的產量。Please refer to FIG. 1A, FIG. 2A, and FIG. 3A. The complete state of the structure of FIG. 1A and FIG. 2A is shown in FIG. 3A, which means that a part of the structure of FIG. In the crystal packaging process of this embodiment, a support structure 120 and a carrier plate 110 are provided. The support structure 120 is disposed on the carrier plate 110. The support structure 120 has a plurality of openings 122. In detail, in this embodiment, the supporting structure 120 is a mesh structure, such as a mesh-shaped reinforcing support. In this way, the support structure and the carrier plate with multiple openings can improve the warping that occurs during the packaging process, especially for larger fan-out wafer level packages (FOWLP) Or Fan-out panel level package (FOPLP), the effect is more obvious. In addition, the support structure 120 and the carrier plate 110 having multiple openings 122 can improve the structural strength of the chip package array 50 (see FIG. 3C) and reduce the production cost of the process, thereby increasing the chip package 100 (see FIG. 1F and Figure 2F).
請參考圖1B、圖2B及圖3B,其中圖1B及圖2B的結構的完整狀態如圖3B所示,意即圖3B的結構的局部呈現於圖1B及圖2B。在上述步驟之後,配置多個晶片130在承載板110上,其中這些晶片130分別位於支撐結構120的多個開口122中。在本實施例中,一開口122中配置一晶片130,本發明不以此為限。在其他實施例中,一開口中可以配置多個晶片,其是利用堆疊的方式,配置於對應的開口中。在本實施例中,配置晶片130在承載板110上的步驟還包括,配置多個被動元件140在承載板110上,且位於晶片130與支撐結構120之間。舉例而言,可在每個開口122中配置一個或多個被動元件140,以符合電性需求。Please refer to FIG. 1B, FIG. 2B, and FIG. 3B. The complete state of the structure of FIG. 1B and FIG. 2B is shown in FIG. 3B, which means that a part of the structure of FIG. 3B is shown in FIG. 1B and FIG. 2B. After the above steps, a plurality of wafers 130 are disposed on the carrier plate 110, wherein the wafers 130 are respectively located in the plurality of openings 122 of the support structure 120. In this embodiment, a wafer 130 is disposed in an opening 122, but the present invention is not limited thereto. In other embodiments, a plurality of wafers can be arranged in an opening, which are arranged in a corresponding opening in a stacking manner. In this embodiment, the step of disposing the wafer 130 on the carrier plate 110 further includes disposing a plurality of passive elements 140 on the carrier plate 110 and located between the wafer 130 and the support structure 120. For example, one or more passive components 140 may be configured in each opening 122 to meet electrical requirements.
請參考圖1C及圖2C,在上述步驟之後,形成封膠150覆蓋支撐結構120與晶片130,支撐結構120與晶片130位於封膠150與承載板110之間,封膠150填充於開口122與晶片130之間。換句話說,在此步驟中,將封膠150填充在支撐結構120上並且完整地覆蓋住支撐結構120及晶片130,以使得支撐結構120中的每一個開口122皆充滿封膠150進而固定支撐結構120及晶片130。除此之外,封膠150也完整地覆蓋住被動元件140。Please refer to FIG. 1C and FIG. 2C. After the above steps, a sealant 150 is formed to cover the support structure 120 and the wafer 130. The support structure 120 and the wafer 130 are located between the sealant 150 and the carrier plate 110. The sealant 150 is filled in the opening 122 and Between the wafers 130. In other words, in this step, the sealant 150 is filled on the support structure 120 and completely covers the support structure 120 and the wafer 130 so that each opening 122 in the support structure 120 is filled with the sealant 150 to fix the support. Structure 120 and wafer 130. In addition, the sealant 150 also completely covers the passive element 140.
請參考圖1D及圖2D,在上述步驟之後,移除承載板110。由於封膠150充滿在每一個開口122,因此支撐結構120與晶片130藉由封膠150彼此固定連接而不會分離。此時,支撐結構120、晶片130、被動元件140與封膠150構成一第一參考平面P1,即支撐結構120、晶片130、被動元件140與封膠150共平面。Please refer to FIG. 1D and FIG. 2D. After the above steps, the carrier plate 110 is removed. Since the sealant 150 fills each of the openings 122, the support structure 120 and the chip 130 are fixedly connected to each other by the sealant 150 without separation. At this time, the support structure 120, the chip 130, the passive component 140 and the sealant 150 constitute a first reference plane P1, that is, the support structure 120, the wafer 130, the passive component 140 and the sealant 150 are coplanar.
請參考圖1E、圖2E及圖3C,其中圖1E及圖2E的結構的完整狀態如圖3C所示,意即圖3C的結構的局部呈現於圖1E及圖2E。在上述步驟之後,配置重佈線路結構160在支撐結構120上並且直接地連接晶片130,藉由重佈線路結構160的配置,可將原本配置在晶片130上的訊號扇出(fan-out)至重佈線路結構160的晶片130投影區外,進而增加晶片130的訊號配置的彈性。另外,重佈線路結構160的導電層部分可直接與晶片130上的接墊130a電性連接,而不需要額外再配置凸塊(bump)。換句話說,重佈線路結構160配置位於第一參考平面P1上並且直接地連接晶片130。此外,更可以配置多個焊球170在重佈線路結構160上,而重佈線路結構160位於晶片130與這些焊球170之間。至此,完成一晶片封裝陣列50,如圖3C所示,其包含多個尚未切割的晶片封裝體100。Please refer to FIG. 1E, FIG. 2E, and FIG. 3C. The complete state of the structure of FIG. 1E and FIG. 2E is shown in FIG. 3C, which means that a part of the structure of FIG. 3C is shown in FIG. 1E and FIG. 2E. After the above steps, the redistribution wiring structure 160 is arranged on the support structure 120 and directly connected to the chip 130. By the redistribution wiring structure 160 configuration, the signal originally arranged on the wafer 130 can be fan-out. To the outside of the projection area of the chip 130 of the redistribution circuit structure 160, the flexibility of the signal configuration of the chip 130 is increased. In addition, the conductive layer portion of the redistribution circuit structure 160 can be electrically connected directly to the pads 130 a on the chip 130 without the need for additional bumps. In other words, the redistribution wiring structure 160 is disposed on the first reference plane P1 and is directly connected to the chip 130. In addition, a plurality of solder balls 170 may be disposed on the redistribution circuit structure 160, and the redistribution circuit structure 160 is located between the wafer 130 and the solder balls 170. So far, a chip package array 50 is completed, as shown in FIG. 3C, which includes a plurality of chip packages 100 that have not been cut.
請參考圖1F及圖2F,在上述步驟之後,沿著多個開口122彼此之間的多個切割線L切割晶片封裝陣列50,以形成單一個晶片封裝體100,如圖1F及圖2F所繪示。換句話說,每個沿著切割線L切割支撐結構120所形成的晶片封裝體100中具有支撐結構120的一部分,而此支撐結構120對於單一個晶片封裝體100而言即為一個環狀的加強支撐件,其能提升晶片封裝體100的整體結構強度。更進一步來說,由於環狀的加強支撐件對齊於切割線L進行切割而形成,故加強支撐件會暴露於單一個晶片封裝體100的側面102,因此對於晶片封裝體100外圍區域來說,提供了較強的保護,同樣地,封膠150以及重佈線路結構160也對齊於切割線L被切割而使得封膠150的一部分以及重佈線路結構160的一部分暴露於單一個晶片封裝體100的側面102。Please refer to FIG. 1F and FIG. 2F. After the above steps, the chip package array 50 is cut along a plurality of cutting lines L between the plurality of openings 122 to form a single chip package 100, as shown in FIGS. 1F and 2F. Draw. In other words, each chip package 100 formed by cutting the support structure 120 along the cutting line L has a part of the support structure 120, and the support structure 120 is a ring shape for a single chip package 100. The reinforcing support can improve the overall structural strength of the chip package 100. Furthermore, since the ring-shaped reinforcing support is formed by being aligned with the cutting line L for cutting, the reinforcing support is exposed to the side 102 of a single chip package 100. Therefore, for the peripheral area of the chip package 100, Provides strong protection. Similarly, the sealant 150 and the redistribution circuit structure 160 are also aligned with the cutting line L to be cut so that part of the sealant 150 and the redistribution circuit structure 160 are exposed to a single chip package 100.的 侧 102。 The side 102.
請再參考圖1E、圖2E及圖3C,具體而言,在本實施例中,晶片封裝陣列50包括多個晶片封裝體100,且晶片封裝體100適於陣列排列以形成晶片封裝陣列50,如圖3C所呈現。各晶片封裝體100包括重佈線路結構160、支撐結構120、晶片130以及封膠150。支撐結構120配置於重佈線路結構160並具有開口122。晶片130配置於重佈線路結構160並位於開口122中。封膠150位於開口122與晶片130之間,其中封膠150填充於開口122與晶片130之間,晶片130與支撐結構120分別與重佈線路結構160直接地連接。換句話說,晶片封裝體100是由晶片封裝陣列50切割而成,因此重佈線路結構160、支撐結構120以及封膠150也被切割而形成於各晶片封裝體100中。由於晶片封裝陣列50的各別晶片封裝體100的外圍區域配置有支撐結構120,因此,能改善晶片封裝陣列50封裝過程中發生的翹曲,並且能提升晶片封裝陣列50的結構強度且降低其製程的生產成本,進而增加晶片封裝體100的產量。除此之外,支撐結構120的配置也可以改善各別晶片封裝體100的整體結構強度。Please refer to FIG. 1E, FIG. 2E and FIG. 3C again. Specifically, in this embodiment, the chip package array 50 includes a plurality of chip packages 100, and the chip packages 100 are suitable for array arrangement to form the chip package array 50 As shown in Figure 3C. Each chip package 100 includes a redistribution circuit structure 160, a support structure 120, a chip 130, and an encapsulant 150. The supporting structure 120 is disposed on the redistribution circuit structure 160 and has an opening 122. The chip 130 is disposed in the redistribution circuit structure 160 and is located in the opening 122. The sealant 150 is located between the opening 122 and the wafer 130, wherein the sealant 150 is filled between the opening 122 and the wafer 130, and the wafer 130 and the support structure 120 are directly connected to the redistribution circuit structure 160, respectively. In other words, the chip package 100 is cut from the chip package array 50, so the redistribution circuit structure 160, the support structure 120, and the sealant 150 are also cut to form each chip package 100. Since the support structure 120 is disposed in the peripheral area of each of the chip package arrays 100 of the chip package array 50, the warpage occurring during the package process of the chip package array 50 can be improved, and the structural strength of the chip package array 50 can be improved and its The production cost of the process further increases the output of the chip package 100. In addition, the configuration of the support structure 120 can also improve the overall structural strength of the respective chip packages 100.
請再參考圖1F及圖2F,具體而言,在本實施例中,晶片封裝體100包括重佈線路結構160、支撐結構120、晶片130以及封膠150。支撐結構120配置於重佈線路結構160並具有開口122。晶片130配置於重佈線路結構160並位於開口122中。封膠150位於開口122與晶片130之間,其中封膠150填充於開口122與晶片130之間,晶片130與支撐結構120分別與重佈線路結構160直接地連接。其中晶片封裝體100是由晶片封裝陣列50(如圖3C所繪示)切割而成,因此重佈線路結構160、支撐結構120以及封膠150也被切割而形成於各晶片封裝體100中。由於晶片封裝體100的外圍區域配置有支撐結構120,因此,能改善晶片封裝體100的整體結構強度。Please refer to FIG. 1F and FIG. 2F again. Specifically, in this embodiment, the chip package 100 includes a redistribution circuit structure 160, a support structure 120, a chip 130, and an encapsulant 150. The supporting structure 120 is disposed on the redistribution circuit structure 160 and has an opening 122. The chip 130 is disposed in the redistribution circuit structure 160 and is located in the opening 122. The sealant 150 is located between the opening 122 and the wafer 130, wherein the sealant 150 is filled between the opening 122 and the wafer 130, and the wafer 130 and the support structure 120 are directly connected to the redistribution circuit structure 160, respectively. The chip package 100 is cut from the chip package array 50 (shown in FIG. 3C). Therefore, the redistribution circuit structure 160, the support structure 120 and the sealant 150 are also cut to form the chip packages 100. Since the support structure 120 is disposed in the peripheral region of the chip package 100, the overall structural strength of the chip package 100 can be improved.
請參考圖4A及圖4B,本實施例的晶片封裝體100A類似於圖1F及圖2F的晶片封裝體100,惟兩者之間主要差異在於封膠150A的配置。在切割晶片封裝陣列50的步驟之前,移除封膠150的一部分以形成封膠150A進而使晶片130裸露。詳細而言,在圖2F的步驟之前,移除部分位於支撐結構120與晶片130上的封膠150,而保留位於支撐結構120與晶片130之間的封膠150A。本實施例的支撐結構120中遠離重佈線路結構160的一頂面124與晶片130遠離重佈線路結構160的一第一面132共面,即位於同一第二參考平面P2上。如此一來,晶片130可暴露於晶片封裝體100A外以接觸散熱導體,進而使晶片封裝體100A有更好的散熱性。Please refer to FIGS. 4A and 4B. The chip package 100A of this embodiment is similar to the chip package 100 of FIGS. 1F and 2F, but the main difference between the two is the configuration of the sealant 150A. Prior to the step of dicing the chip package array 50, a part of the sealant 150 is removed to form a sealant 150A to expose the wafer 130. In detail, before the step of FIG. 2F, a part of the sealant 150 located on the support structure 120 and the wafer 130 is removed, and the sealant 150A located between the support structure 120 and the wafer 130 is retained. A top surface 124 of the support structure 120 far from the redistribution circuit structure 160 in this embodiment and a first surface 132 of the wafer 130 far from the redistribution circuit structure 160 are coplanar, that is, located on the same second reference plane P2. In this way, the chip 130 can be exposed to the outside of the chip package 100A to contact the heat dissipation conductor, so that the chip package 100A has better heat dissipation.
請參考圖5,本實施例的晶片封裝體100B類似於圖2F的晶片封裝體100,惟兩者之間主要差異例如在於本實施例的開口122具有一內面126,內面126具有至少一凹槽128,且封膠150充滿凹槽128。如此一來,可藉由封膠150充滿在凹槽128中進而確保晶片封裝體100B的整體結構強度。除此之外,在另一實施例中,可進一步移除部份封膠150,而使晶片130裸露,類似於圖4A及圖4B所繪示。Please refer to FIG. 5. The chip package 100B of this embodiment is similar to the chip package 100 of FIG. 2F, but the main difference between the two is, for example, that the opening 122 of this embodiment has an inner surface 126, and the inner surface 126 has at least one The groove 128 is filled with the sealant 150. In this way, the overall structural strength of the chip package 100B can be ensured by filling the groove 128 with the sealant 150. In addition, in another embodiment, a part of the sealant 150 may be further removed, so that the chip 130 is exposed, similar to that shown in FIGS. 4A and 4B.
請參考圖6,本實施例的晶片封裝體100C類似於圖2F的晶片封裝體100,惟兩者之間主要差異例如在於本實施例的開口122具有一內面126C,且內面126C朝向遠離晶片130的方向傾斜,使得封膠150延伸至內面126C的上方。換句話說,由於內面126C的傾斜設計,可使得支撐結構120藉由封膠150的延伸而覆蓋,進而使支撐結構120與重佈線路結構160更緊密連接而不易脫落。如此一來,可藉由封膠150覆蓋內面126C進而確保晶片封裝體100C的整體結構強度。除此之外,在另一實施例中,可進一步移除部份封膠150,而使晶片130裸露,類似於圖4A及圖4B所繪示。Please refer to FIG. 6. The chip package 100C of this embodiment is similar to the chip package 100 of FIG. 2F, but the main difference between the two is that the opening 122 of this embodiment has an inner surface 126C, and the inner surface 126C faces away from The direction of the wafer 130 is inclined, so that the sealant 150 extends above the inner surface 126C. In other words, due to the inclined design of the inner surface 126C, the support structure 120 can be covered by the extension of the sealant 150, so that the support structure 120 and the redistribution circuit structure 160 are more closely connected and are not easy to fall off. In this way, the overall structural strength of the chip package 100C can be ensured by covering the inner surface 126C with the sealant 150. In addition, in another embodiment, a part of the sealant 150 may be further removed, so that the chip 130 is exposed, similar to that shown in FIGS. 4A and 4B.
綜上所述,在本發明的晶片封裝製程中,由於晶片封裝陣列的各別晶片封裝體的外圍區域配置有支撐結構(此時加強支撐件會於單一個晶片封裝體的側面上暴露出來),因此,能改善封裝過程中發生的翹曲,並且能提升晶片封裝陣列的結構強度且降低其製程的生產成本,進而增加晶片封裝體的產量。除此之外,支撐結構的配置也可以改善各別晶片封裝體的整體結構強度。In summary, in the wafer packaging process of the present invention, since the peripheral regions of the respective chip packages of the chip package array are configured with supporting structures (at this time, the reinforcing support members will be exposed on the sides of a single chip package) Therefore, the warpage occurring during the packaging process can be improved, and the structural strength of the chip packaging array can be improved, and the production cost of its manufacturing process can be reduced, thereby increasing the yield of the chip package. In addition, the configuration of the support structure can also improve the overall structural strength of each chip package.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.
50‧‧‧晶片封裝陣列50‧‧‧ Wafer Package Array
100、100A、100B、100C‧‧‧晶片封裝體100, 100A, 100B, 100C‧‧‧ Chip Packages
102‧‧‧側面102‧‧‧ side
110‧‧‧承載板110‧‧‧carrying plate
120‧‧‧支撐結構120‧‧‧ support structure
122‧‧‧開口122‧‧‧ opening
124‧‧‧頂面124‧‧‧Top
126、126C‧‧‧內面126, 126C‧‧‧ inside
128‧‧‧凹槽128‧‧‧ groove
130‧‧‧晶片130‧‧‧Chip
130a‧‧‧接墊130a‧‧‧ pad
132‧‧‧第一面132‧‧‧ the first side
140‧‧‧被動元件140‧‧‧Passive components
150、150A‧‧‧封膠150, 150A‧‧‧ Sealant
160‧‧‧重佈線路結構160‧‧‧ Redistribution line structure
170‧‧‧焊球170‧‧‧Solder Ball
P1‧‧‧第一參考平面P1‧‧‧first reference plane
P2‧‧‧第二參考平面P2‧‧‧Second reference plane
L‧‧‧切割線L‧‧‧ cutting line
圖1A至圖1F依序本發明的一實施例的晶片封裝製程的俯視示意圖。 圖2A至圖2F分別是圖1A至圖1F的結構沿圖1A的線A-A’的剖面示意圖。 圖3A是圖1A及圖2A的結構於完整狀態下的立體示意圖。 圖3B是圖1B及圖2B的結構於完整狀態下的立體示意圖。 圖3C是圖1E及圖2E的結構於完整狀態下的立體示意圖。 圖4A為本發明的另一實施例的晶片封裝體的俯視示意圖。 圖4B為本發明的另一實施例的晶片封裝體的剖面示意圖。 圖5為本發明的又一實施例的晶片封裝體的剖面示意圖。 圖6為本發明的再一實施例的晶片封裝體的剖面示意圖。1A to FIG. 1F are schematic top views of a chip packaging process according to an embodiment of the present invention in sequence. 2A to 2F are schematic cross-sectional views of the structure of FIGS. 1A to 1F along the line A-A 'of FIG. 1A, respectively. 3A is a schematic perspective view of the structure of FIGS. 1A and 2A in a complete state. 3B is a schematic perspective view of the structure of FIGS. 1B and 2B in a complete state. 3C is a schematic perspective view of the structure of FIG. 1E and FIG. 2E in a complete state. 4A is a schematic top view of a chip package according to another embodiment of the present invention. 4B is a schematic cross-sectional view of a chip package according to another embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a chip package according to another embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a chip package according to another embodiment of the present invention.
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