TWI673757B - 用於電漿處理的電弧偵測方法及設備，及包括此之電漿處理腔室 - Google Patents

用於電漿處理的電弧偵測方法及設備，及包括此之電漿處理腔室 Download PDF

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Publication number
TWI673757B
TWI673757B TW105139047A TW105139047A TWI673757B TW I673757 B TWI673757 B TW I673757B TW 105139047 A TW105139047 A TW 105139047A TW 105139047 A TW105139047 A TW 105139047A TW I673757 B TWI673757 B TW I673757B
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TW
Taiwan
Prior art keywords
detection circuit
processing chamber
arc
analog signal
plasma processing
Prior art date
Application number
TW105139047A
Other languages
English (en)
Chinese (zh)
Other versions
TW201730913A (zh
Inventor
林 張
榮平 王
建Ｊ 陳
麥可Ｓ 寇克斯
安德魯Ｖ 樂
Original Assignee
美商應用材料股份有限公司
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Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201730913A publication Critical patent/TW201730913A/zh
Application granted granted Critical
Publication of TWI673757B publication Critical patent/TWI673757B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32944—Arc detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW105139047A 2015-12-04 2016-11-28 用於電漿處理的電弧偵測方法及設備，及包括此之電漿處理腔室 TWI673757B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562263472P 2015-12-04 2015-12-04
US62/263,472 2015-12-04

Publications (2)

Publication Number Publication Date
TW201730913A TW201730913A (zh) 2017-09-01
TWI673757B true TWI673757B (zh) 2019-10-01

Family

ID=58797823

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105139047A TWI673757B (zh) 2015-12-04 2016-11-28 用於電漿處理的電弧偵測方法及設備，及包括此之電漿處理腔室

Country Status (6)

Country Link
US (1) US10580626B2 (https=)
JP (1) JP6814213B2 (https=)
KR (2) KR102107160B1 (https=)
CN (2) CN111508811A (https=)
TW (1) TWI673757B (https=)
WO (1) WO2017095586A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3035365A1 (en) * 2014-12-19 2016-06-22 TRUMPF Huettinger Sp. Z o. o. Method of detecting an arc occurring during the power supply of a plasma process, control unit for a plasma power supply, and plasma power supply
CN114355244B (zh) * 2021-12-29 2026-02-06 北京北方华创微电子装备有限公司 基座接地检测装置和方法
US12590361B2 (en) * 2022-06-28 2026-03-31 Applied Materials Inc. Methods and apparatus for processing a substrate
JP2024016522A (ja) * 2022-07-26 2024-02-07 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
CN115835467B (zh) * 2022-12-26 2024-03-08 武汉大学 一种基于主被动融合的等离子体三维定位系统及方法
CN119601446B (zh) * 2023-09-08 2026-01-09 中微半导体设备(上海)股份有限公司 一种等离子体处理腔室的电弧的检测方法及检测装置

Citations (4)

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US6894474B2 (en) * 2002-06-07 2005-05-17 Applied Materials, Inc. Non-intrusive plasma probe
TW200935984A (en) * 2007-11-30 2009-08-16 Panasonic Corp Plasma treatment apparatus and plasma treatment method
US20090308734A1 (en) * 2008-06-17 2009-12-17 Schneider Automation Inc. Apparatus and Method for Wafer Level Arc Detection
US20110040508A1 (en) * 2009-08-12 2011-02-17 Kang Lee Apparatus and method for detecting arcs

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WO2005015964A1 (ja) * 2003-08-07 2005-02-17 Hitachi Kokusai Electric Inc. 基板処理装置及び基板処理方法
WO2008100318A1 (en) * 2006-03-17 2008-08-21 Schneider Automation Inc. Current-based method and apparatus for detecting and classifying arcs
KR20080006750A (ko) * 2006-07-13 2008-01-17 삼성전자주식회사 반도체소자 제조용 플라즈마 도핑 시스템
US7795817B2 (en) * 2006-11-24 2010-09-14 Huettinger Elektronik Gmbh + Co. Kg Controlled plasma power supply
ATE547804T1 (de) * 2007-12-24 2012-03-15 Huettinger Electronic Sp Z O O Stromänderungsbegrenzungsvorrichtung
US8289029B2 (en) * 2008-02-14 2012-10-16 Mks Instruments, Inc. Application of wideband sampling for arc detection with a probabilistic model for quantitatively measuring arc events
JP2011022657A (ja) * 2009-07-13 2011-02-03 Fujitsu Ltd メモリシステムおよび情報処理装置
US8440061B2 (en) * 2009-07-20 2013-05-14 Lam Research Corporation System and method for plasma arc detection, isolation and prevention
US8502689B2 (en) * 2010-09-23 2013-08-06 Applied Materials, Inc. System and method for voltage-based plasma excursion detection
US8587321B2 (en) * 2010-09-24 2013-11-19 Applied Materials, Inc. System and method for current-based plasma excursion detection
KR101303040B1 (ko) * 2012-02-28 2013-09-03 주식회사 뉴파워 프라즈마 플라즈마 챔버의 아크 검출 방법 및 장치
KR20120127350A (ko) * 2012-08-29 2012-11-21 (주)쎄미시스코 플라즈마 모니터링 시스템
US9653269B2 (en) * 2013-08-14 2017-05-16 Applied Materials, Inc. Detecting arcing using processing chamber data
US10054631B2 (en) * 2015-09-21 2018-08-21 Advent Design Corporation Electrical arcing detector for arcing at series electrictrical connection

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6894474B2 (en) * 2002-06-07 2005-05-17 Applied Materials, Inc. Non-intrusive plasma probe
TW200935984A (en) * 2007-11-30 2009-08-16 Panasonic Corp Plasma treatment apparatus and plasma treatment method
US20090308734A1 (en) * 2008-06-17 2009-12-17 Schneider Automation Inc. Apparatus and Method for Wafer Level Arc Detection
TW201011118A (en) * 2008-06-17 2010-03-16 Square D Co Apparatus and method for wafer level ARC detection
US20110040508A1 (en) * 2009-08-12 2011-02-17 Kang Lee Apparatus and method for detecting arcs

Also Published As

Publication number Publication date
KR20200047767A (ko) 2020-05-07
KR20180081145A (ko) 2018-07-13
WO2017095586A1 (en) 2017-06-08
TW201730913A (zh) 2017-09-01
US10580626B2 (en) 2020-03-03
KR102370438B1 (ko) 2022-03-03
KR102107160B1 (ko) 2020-05-06
CN108292582B (zh) 2020-04-28
US20170162370A1 (en) 2017-06-08
CN108292582A (zh) 2018-07-17
JP6814213B2 (ja) 2021-01-13
JP2019504439A (ja) 2019-02-14
CN111508811A (zh) 2020-08-07

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