TWI666344B - Conductive ring, power supply device based on same, and electroplating fixture based on power supply device - Google Patents

Conductive ring, power supply device based on same, and electroplating fixture based on power supply device Download PDF

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TWI666344B
TWI666344B TW107129360A TW107129360A TWI666344B TW I666344 B TWI666344 B TW I666344B TW 107129360 A TW107129360 A TW 107129360A TW 107129360 A TW107129360 A TW 107129360A TW I666344 B TWI666344 B TW I666344B
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conductive ring
conductive
supply device
power supply
ring body
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TW107129360A
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TW202009333A (en
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何志剛
林振煜
吳學宇
姚吉豪
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台灣創智成功科技有限公司
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Abstract

本發明公開了一種導電環、基於其的供電裝置及基於供電裝置的電鍍治具,該導電環包括導電環本體,所述導電環本體為分段式結構分布,且由多個導電段組成;每相鄰兩個導電段之間的斷開口填充絕緣膠後通過該絕緣膠進行隔開;所述導電環本體的表面包裹有絕緣膠層;且所述導電環本體設置有至少一個電極和至少一個支撐腳。本發明導電環被均分為多段,且每段均可獨立進行電流控制,從而確保晶圓或印刷線路板整體電流分布密度的一致性和均勻性,保證其表面電鍍層質量;在傳統導電環本體上增設了鍍鎳層和鍍銀層,從而降低了導電阻抗,且增強了其傳遞電流的穩定性,進而減少了檢修和更換導電環本體的頻率,降低了檢修成本。 The invention discloses a conductive ring, a power supply device based on the same, and a plating fixture based on the power supply device. The conductive ring includes a conductive ring body, and the conductive ring body is a segmented structure distribution and is composed of multiple conductive segments; The opening between each adjacent two conductive segments is filled with insulating glue and separated by the insulating glue; the surface of the conductive ring body is covered with an insulating rubber layer; and the conductive ring body is provided with at least one electrode and at least One support foot. The conductive ring of the present invention is divided into multiple sections, and each section can independently perform current control, thereby ensuring the consistency and uniformity of the overall current distribution density of the wafer or printed circuit board, and ensuring the quality of the surface plating layer; A nickel plating layer and a silver plating layer are added on the body, thereby reducing the conductive impedance and enhancing the stability of the current transmission, thereby reducing the frequency of repairing and replacing the conductive ring body, and reducing the maintenance cost.

Description

導電環、基於其的供電裝置及基於供電裝置的電鍍治具 Conductive ring, power supply device based on same, and electroplating fixture based on power supply device

本發明係關於電鍍技術領域,尤其是關於一種導電環、基於其的供電裝置及基於供電裝置的電鍍治具。 The invention relates to the technical field of electroplating, and in particular to a conductive ring, a power supply device based on the same, and a plating fixture based on the power supply device.

在半導體元器件(如晶圓或印刷電路板等)生產過程中,需要對其表面進行電鍍處理,以晶圓為例,需將其放置於電鍍治具上,晶圓電鍍治具上設置有導電環,這些導電環與晶圓電鍍治具上的晶圓相接觸,因此,晶圓電鍍治具上的晶圓在電鍍工藝中可與外部電源相連,進而通過電鍍液的分解可在其表面形成所需鍍層。然而,在實際電鍍工藝過程中極易出現晶圓各不同區域鍍層厚度不一的情況,出現上述問題的主要原因為各區域內電流密度分度偏差,因而,如何保證晶圓各區域電流分布密度的一致性成為技術人員亟待解決的問題。 During the production of semiconductor components (such as wafers or printed circuit boards), the surface needs to be plated. Taking a wafer as an example, it needs to be placed on a plating fixture. The wafer plating fixture is provided with Conductive rings. These conductive rings are in contact with the wafer on the wafer plating fixture. Therefore, the wafer on the wafer plating fixture can be connected to an external power source during the plating process, and the surface of the wafer can be decomposed by the decomposition of the plating solution. Form the required plating. However, in the actual electroplating process, it is very easy to have different coating thicknesses in different regions of the wafer. The main reason for the above problem is the deviation of the current density index in each region. Therefore, how to ensure the current distribution density in each region of the wafer Consistency has become a problem that technicians need to solve urgently.

針對上述技術中存在的不足之處,本發明提供一種導電環、基於其的供電裝置及基於供電裝置的電鍍治具,在電鍍過程中對晶圓或印刷線路板等半導體元器件進行分區域電流控制,確保電流分布密度一致性較好的導電環。 In view of the shortcomings in the above technology, the present invention provides a conductive ring, a power supply device based on the same, and a plating fixture based on the power supply device. During the electroplating process, the semiconductor components such as wafers or printed circuit boards are divided into regional currents. Control to ensure a conductive ring with better current distribution density consistency.

為實現上述目的,本發明提供一種導電環,包括導電環本體,所述導電環本體為分段式結構分布,且由多個導電段組成;每相鄰兩 個導電段之間的斷開口填充絕緣膠後通過該絕緣膠進行隔開;所述導電環本體的表面包裹有絕緣膠層;且所述導電環本體設置有至少一個電極和至少一個支撐腳。 To achieve the above object, the present invention provides a conductive ring including a conductive ring body. The conductive ring body is distributed in a segmented structure and is composed of multiple conductive segments. The openings between the conductive sections are filled with insulating glue and separated by the insulating glue; the surface of the conductive ring body is covered with an insulating rubber layer; and the conductive ring body is provided with at least one electrode and at least one supporting leg.

其中,所述導電環本體的外表面從內向外依序設置有鍍鎳層和鍍銀層,且所述鍍銀層置於鍍鎳層與絕緣膠層之間。 Wherein, the outer surface of the conductive ring body is sequentially provided with a nickel plating layer and a silver plating layer from the inside to the outside, and the silver plating layer is disposed between the nickel plating layer and the insulating rubber layer.

其中,所述鍍鎳層的厚度為3~8μm,且所述鍍銀層的厚度為15~30μm;所述斷開口的尺寸為3~5mm。 The thickness of the nickel-plated layer is 3 to 8 μm, and the thickness of the silver-plated layer is 15 to 30 μm; and the size of the cutout is 3 to 5 mm.

其中,所述導電環本體由不銹鋼製成,且每個導電段上均設置有多個所述支撐腳,且沿其圓周方向均勻分布。 Wherein, the conductive ring body is made of stainless steel, and each of the conductive segments is provided with a plurality of the supporting legs, which are evenly distributed along a circumferential direction thereof.

為實現上述目的,本發明還提供一種基於導電環的供電裝置,包括多個高頻開關整流器和如上述所述的導電環,所述高頻開關整流器的數量與導電環的導電段數量相同;且每個高頻開關整流器的負極與對應的導電段相連通;每個高頻開關整流器的正極均連接至陽極板;該導電環連接半導體元器件,且該陽極板與半導體元器件之間為電鍍液;高頻開關整流器給這整個回路提供電壓電流,在高頻開關整流器的電壓電勢作用下,陽極板溶解出金屬陽離子到電鍍液中,電鍍液中的金屬離子隨著電力線的方嚮往半導體元器件移動,最終金屬陽離子在半導體元器件上得到電子析出形成金屬單質,既完成電鍍過程。 In order to achieve the above object, the present invention further provides a power supply device based on a conductive ring, including a plurality of high-frequency switching rectifiers and the conductive rings as described above, and the number of the high-frequency switching rectifiers is the same as the number of conductive segments of the conductive rings; And the negative pole of each high-frequency switching rectifier is connected to the corresponding conductive segment; the positive pole of each high-frequency switching rectifier is connected to the anode plate; the conductive ring is connected to the semiconductor component, and the anode plate and the semiconductor component are between Electroplating solution; the high-frequency switching rectifier provides voltage and current to the entire circuit. Under the action of the voltage potential of the high-frequency switching rectifier, the anode plate dissolves metal cations into the plating solution, and the metal ions in the plating solution follow the direction of the power line to the semiconductor. The components move, and finally metal cations are precipitated on the semiconductor components to form a metal element, which completes the electroplating process.

其中,每個高頻開關整流器包括依次相連接的防電磁干擾線路濾波器、整流器、濾波器、高頻變壓器、高頻濾波器、mos管、控制芯片和驅動器;所述交流電網依次經過防電磁干擾線路濾波器、整流器、濾波器、高頻變壓器、高頻濾波器、mos管、控制芯片和驅動器後得到穩定的輸出電流。 Wherein, each high-frequency switching rectifier includes an anti-electromagnetic interference line filter, a rectifier, a filter, a high-frequency transformer, a high-frequency filter, a mos tube, a control chip, and a driver connected in order; Stable output current is obtained after interference line filters, rectifiers, filters, high-frequency transformers, high-frequency filters, mos tubes, control chips and drivers.

為實現上述的目的,本發明還提供一種基於供電裝置的電鍍治具,包括治具本體、蓋板和如上述權利要求所述的供電裝置;所述治具本體上設置有與半導體元器件相適配的凹槽,所述供電裝置中的導電環本體設置於所述半導體元器件的下表面;所述蓋板上設置有彈性墊環和外形尺寸與所述凹槽相適配的凸台;所述蓋板對半導體元器件上表面進行壓緊時,凸台落入凹槽內後兩者形成一腔體,所述半導體元器件和導電環本體置於該腔體內,所述治具本體上還並排固定有多個導電銅鈎,且每個高頻開關整流器通過對應的導電銅鈎在通過對應的電纜連接至對應的導電段的電極上。 In order to achieve the above-mentioned object, the present invention also provides a plating fixture based on a power supply device, which includes a fixture body, a cover plate and the power supply device according to the preceding claim; the fixture body is provided with a semiconductor component. An adapted groove, wherein the conductive ring body in the power supply device is disposed on the lower surface of the semiconductor component; the cover plate is provided with an elastic cushion ring and a boss with an external dimension adapted to the groove ; When the cover plate presses on the upper surface of the semiconductor component, the two parts form a cavity after the boss falls into the groove, and the semiconductor component and the conductive ring body are placed in the cavity, and the jig A plurality of conductive copper hooks are also fixed side by side on the body, and each high-frequency switch rectifier is connected to an electrode of a corresponding conductive segment through a corresponding cable through a corresponding conductive copper hook.

其中,所述凹槽內設置有用於放置導電環本體的環形槽。 The groove is provided with an annular groove for placing a conductive ring body therein.

其中,所述凸臺上設置有外螺紋,所述凹槽內壁上設置有與外螺紋相適配的內螺紋,當蓋板通過內、外螺紋下旋時,蓋板對半導體元器件的壓力與下旋距離呈線性關係。 Wherein, the boss is provided with an external thread, and the inner wall of the groove is provided with an internal thread adapted to the external thread. When the cover plate is rotated down through the internal and external threads, the cover plate is There is a linear relationship between the pressure and the downspin distance.

與現有技術相比,本發明提供的導電環、基於其的供電裝置及基於供電裝置的電鍍治具,具有如下有益效果:1)導電環被均分為多段,且每段均可獨立進行電流控制,從而確保晶圓或印刷線路板整體電流分布密度的一致性和均勻性,保證其表面電鍍層質量;2)在傳統導電環本體上增設了鍍鎳層和鍍銀層,從而降低了導電阻抗,且增強了其傳遞電流的穩定性,進而減少了檢修和更換導電環本體的頻率,降低了檢修成本;3)通過高頻開關整流器對各分段導電環本體進行電流控制,在供電期間其可根據電流反饋進行實時調整,從而更容易保證晶圓或印刷線路板整體電流分布密度的一致性和均勻性; 4)凸台落入凹槽內後兩者形成一腔體,所述半導體元器件和導電環本體置於該腔體內,這種結構方式使得導電環本體的導電方式由傳統的點接觸、線接觸轉變為面接觸,大大提高了電流在晶圓或印刷線路板上分布的均勻性及電流密度,再者,晶圓或印刷線路板與導電環本體之間存在一定壓力,即使電鍍液發生震盪也不會導致接觸不良現象發生,另外,在彈性墊環的作用下,使得電鍍液與晶圓或印刷線路板的下表面隔絕,避免在電鍍工序中發生藥水交叉侵蝕現象,從而提高了晶圓或印刷線路板電鍍質量。 Compared with the prior art, the conductive ring provided by the present invention, the power supply device based on the same and the electroplating fixture based on the power supply device have the following beneficial effects: 1) The conductive ring is divided into multiple sections, and each section can independently conduct current. Control to ensure the consistency and uniformity of the overall current distribution density of the wafer or printed circuit board, and to ensure the quality of the surface plating layer; 2) the addition of a nickel plating layer and a silver plating layer on the traditional conductive ring body, thereby reducing the conductivity Impedance, and enhances the stability of its current transmission, thereby reducing the frequency of repairing and replacing the conductive ring body, reducing the maintenance cost; 3) current control of each segmented conductive ring body through a high-frequency switch rectifier, during power supply It can be adjusted in real time according to the current feedback, which makes it easier to ensure the consistency and uniformity of the current distribution density of the wafer or printed circuit board as a whole; 4) After the boss falls into the groove, the two form a cavity, and the semiconductor component and the conductive ring body are placed in the cavity. This structure makes the conductive method of the conductive ring body from the traditional point contact and line. The contact is changed into a surface contact, which greatly improves the uniformity and current density of the current distribution on the wafer or printed circuit board. Furthermore, there is a certain pressure between the wafer or printed circuit board and the conductive ring body, even if the plating solution oscillates. It will not cause poor contact. In addition, the elastic pad ring isolates the plating solution from the lower surface of the wafer or printed circuit board, avoiding the phenomenon of cross-erosion of chemicals during the plating process, thereby improving the wafer. Or printed circuit board plating quality.

1‧‧‧治具本體 1‧‧‧ Fixture body

2‧‧‧晶圓 2‧‧‧ wafer

3‧‧‧導電環本體 3‧‧‧Conductive ring body

4‧‧‧蓋板 4‧‧‧ cover

5‧‧‧彈性墊環 5‧‧‧ elastic cushion ring

6‧‧‧高頻開關整流器 6‧‧‧High Frequency Switch Rectifier

7‧‧‧凸台 7‧‧‧ Boss

8‧‧‧電纜 8‧‧‧cable

9‧‧‧導電銅鈎 9‧‧‧ conductive copper hook

10‧‧‧陽極板 10‧‧‧Anode plate

11‧‧‧凹槽 11‧‧‧ groove

31‧‧‧導電段 31‧‧‧Conductive section

32‧‧‧斷開口 32‧‧‧ Disconnect

33‧‧‧電極 33‧‧‧electrode

34‧‧‧支撐腳 34‧‧‧ support feet

圖1是本發明中之導電環的結構示意圖;圖2是本發明中之圖1中I處的局部放大圖;圖3是本發明中之供電裝置的原理圖;圖4是本發明中之電鍍治具的結構示意圖;圖5是本發明的電鍍治具中之治具本體的立體示意圖。 FIG. 1 is a schematic structural diagram of a conductive ring in the present invention; FIG. 2 is a partially enlarged view of I in FIG. 1 in the present invention; FIG. 3 is a schematic diagram of a power supply device in the present invention; Schematic diagram of the structure of the electroplating jig; FIG. 5 is a schematic perspective view of the jig body in the electroplating jig of the present invention.

為了更清楚地表述本發明,下面結合附圖對本發明作進一步地描述。 In order to express the present invention more clearly, the present invention is further described below with reference to the accompanying drawings.

請參閱圖1-2,本發明提供的導電環,包括導電環本體3,所述導電環本體為分段式結構分布,且由多個導電段31組成;每相鄰兩個導電段之間的斷開口32填充絕緣膠後通過該絕緣膠進行隔開;所述導電環本 體的表面包裹有絕緣膠層;且所述導電環本體設置有至少一個電極33和至少一個支撐腳34。 Please refer to FIGS. 1-2. The conductive ring provided by the present invention includes a conductive ring body 3, which is distributed in a segmented structure and is composed of multiple conductive segments 31; between each adjacent two conductive segments The disconnection opening 32 is filled with insulating glue and separated by the insulating glue; The surface of the body is wrapped with an insulating glue layer; and the conductive ring body is provided with at least one electrode 33 and at least one support leg 34.

在本實施例子中,所述導電環本體31的外表面從內向外依序設置有鍍鎳層和鍍銀層,且所述鍍銀層置於鍍鎳層與絕緣膠層之間。 In this embodiment, a nickel plating layer and a silver plating layer are sequentially disposed on the outer surface of the conductive ring body 31 from the inside to the outside, and the silver plating layer is disposed between the nickel plating layer and the insulating rubber layer.

在本實施例子中,所述鍍鎳層的厚度為3~8μm,且所述鍍銀層的厚度為15~30μm;所述斷開口的尺寸為3~5mm。所述導電環本體由不銹鋼製成,且每個導電段上均設置有多個所述支撐腳,且沿其圓周方向均勻分布。採用上述技術方案的導電環,其被均分為多段,且每段均可獨立進行電流控制,從而確保晶圓或印刷線路板整體電流分布密度的一致性和均勻性,保證其表面電鍍層質量。 In this embodiment, the thickness of the nickel plating layer is 3 to 8 μm, and the thickness of the silver plating layer is 15 to 30 μm; and the size of the cutout is 3 to 5 mm. The conductive ring body is made of stainless steel, and each of the conductive segments is provided with a plurality of the supporting legs and is evenly distributed along its circumferential direction. The conductive ring adopting the above technical solution is evenly divided into multiple segments, and each segment can independently perform current control, thereby ensuring the consistency and uniformity of the overall current distribution density of the wafer or printed circuit board, and ensuring the quality of its surface plating layer. .

作為上述導電環本體3的進一步優化,為了提高導電環本體3的抗蝕性,其可以由不銹鋼製成,且在其表面電鍍有鍍鎳層和鍍銀層,從內向外依序設置,從而降低了導電阻抗,且增強了其傳遞電流的穩定性,進而減少了檢修和更換導電環本體3的頻率,降低了檢修成本。鍍鎳層的厚度優選為3~8μm;鍍銀層的厚度優選為15~30μm。 As a further optimization of the conductive ring body 3, in order to improve the corrosion resistance of the conductive ring body 3, it can be made of stainless steel, and its surface is plated with a nickel plating layer and a silver plating layer, which are sequentially arranged from the inside to the outside, so that The conductive impedance is reduced, and the stability of the current transmission is enhanced, thereby reducing the frequency of repairing and replacing the conductive ring body 3, and reducing the repair cost. The thickness of the nickel plating layer is preferably 3 to 8 μm; the thickness of the silver plating layer is preferably 15 to 30 μm.

請進一步參閱圖3,本發明還提供一種基於導電環的供電裝置,包括多個高頻開關整流器6和上述的導電環,所述高頻開關整流器的數量與導電環的導電段31數量相同;且每個高頻開關整流器與對應的導電段相連通。每個高頻開關整流器的正極均連接至陽極板10;該導電環連接半導體元器件,且該陽極板與半導體元器件之間為電鍍液;高頻開關整流器給這整個回路提供電壓電流,在高頻開關整流器的電壓電勢作用下,陽極板溶解出金屬陽離子到電鍍液中,電鍍液中的金屬離子隨著電力線的方嚮往半導體元器件移動,最終金屬陽離子在半導體元器件上得到電子析出形成金屬單質,既完成電鍍過程。這裡的半導體元器件即為晶圓。 Please refer to FIG. 3 further, the present invention further provides a power supply device based on a conductive ring, which includes a plurality of high-frequency switching rectifiers 6 and the above-mentioned conductive rings, the number of the high-frequency switching rectifiers is the same as the number of conductive segments 31 of the conductive ring; And each high-frequency switching rectifier is in communication with a corresponding conductive segment. The positive electrode of each high-frequency switching rectifier is connected to the anode plate 10; the conductive ring is connected to the semiconductor components, and the plating solution is between the anode plate and the semiconductor components; the high-frequency switching rectifier provides voltage and current to the entire circuit. Under the action of the voltage potential of the high-frequency switching rectifier, the anode plate dissolves metal cations into the plating solution, and the metal ions in the plating solution move toward the semiconductor components with the direction of the power line. Finally, the metal cations are precipitated on the semiconductor components and formed. Metal simple substance, both complete the plating process. The semiconductor components here are wafers.

每個高頻開關整流器包括依次相連接的防電磁干擾線路濾波器、整流器、濾波器、高頻變壓器、高頻濾波器、mos管、控制芯片和驅動器;所述交流電網依次經過防電磁干擾線路濾波器、整流器、濾波器、高頻變壓器、高頻濾波器、mos管、控制芯片和驅動器後得到穩定的輸出電流。圖3示出了本發明中電鍍供電裝置的原理圖,導電環本體3的四個分段均分別與四個高頻開關整流器進行獨立連接。高頻開關整流器將交流電網經防電磁干擾線路濾波器,直接整流、濾波,經變換器將直流電壓變換成數十或數百kHz的高頻方波,經高頻變壓器隔離、降壓,再經高頻濾波輸出直流電壓。經取樣、比較、放大及控制、驅動電路,控制變換器中功率管的占空比,得到穩定的輸出電流。高頻開關整流器具有恆電流限壓模式。當電鍍工藝參數(如零件面積、溫度、濃度、酸鹼度)發生改變時,其輸出電流自動恒定在設定值不發生改變,確保晶圓整體電流分布密度的一致性和均勻性,保證其表面電鍍層質量。這裡的高頻開關整流器電流是10A,電壓是15V;是目前市面上可以買到的。 Each high-frequency switching rectifier includes an anti-electromagnetic interference line filter, a rectifier, a filter, a high-frequency transformer, a high-frequency filter, a mos tube, a control chip, and a driver connected in sequence; the AC power grid passes through the anti-electromagnetic interference line in order. Filters, rectifiers, filters, high-frequency transformers, high-frequency filters, mos tubes, control chips and drivers get stable output current. FIG. 3 shows a schematic diagram of the electroplating power supply device in the present invention. The four segments of the conductive ring body 3 are independently connected to four high-frequency switch rectifiers, respectively. The high-frequency switching rectifier directly rectifies and filters the AC power grid through an electromagnetic interference-prevention line filter. The converter converts the DC voltage into a high-frequency square wave of tens or hundreds of kHz, and then isolates and steps down the voltage through a high-frequency transformer. Outputs DC voltage after high-frequency filtering. After sampling, comparing, amplifying, controlling, and driving the circuit, the duty cycle of the power tube in the converter is controlled to obtain a stable output current. The high frequency switching rectifier has a constant current voltage limiting mode. When the plating process parameters (such as part area, temperature, concentration, and pH) change, the output current is automatically constant at the set value without changing, ensuring the consistency and uniformity of the overall current distribution density of the wafer, and ensuring its surface plating layer. quality. The high-frequency switching rectifier here has a current of 10A and a voltage of 15V; it is currently available on the market.

請參閱圖4-5,本發明還提供一種基於供電裝置的電鍍治具,包括治具本體1、蓋板4和所述的供電裝置;所述治具本體上設置有與半導體元器件相適配的凹槽11,所述供電裝置中的導電環本體設置於所述半導體元器件的下表面;所述蓋板4上設置有彈性墊環5和外形尺寸與所述凹槽相適配的凸台7;半導體元器件為晶圓或印刷線路板,圖中示出的半導體元器件為晶圓2;所述蓋板對半導體元器件上表面進行壓緊時,凸台落入凹槽內後兩者形成一腔體,所述半導體元器件和導電環本體置於該腔體內,多個導電銅鈎並排固定在治具本體上,且每個高頻開關整流器通過對應的導電銅鈎9通過電纜連接至對應的導電段的電極上。在治具本體上進行開線 槽,相應地,在線槽內布置與各段導電環本體相接通的電纜8,出於現階段產品布局的合理性考慮,導電環本體被分隔為4段,與之相應地,高頻開關整流器的數量設置為4,當然,也可以根據實際情況將導電環本體分隔為6段、8段等。 Please refer to FIGS. 4-5. The present invention also provides a plating fixture based on a power supply device, which includes a fixture body 1, a cover plate 4, and the power supply device; the fixture body is provided with a component suitable for semiconductor components. A groove 11 is provided, and the conductive ring body in the power supply device is disposed on the lower surface of the semiconductor component; the cover plate 4 is provided with an elastic cushion ring 5 and an outer dimension matching the groove Boss 7; the semiconductor component is a wafer or a printed circuit board, and the semiconductor component shown in the figure is wafer 2. When the cover plate presses the upper surface of the semiconductor component, the boss falls into the groove The latter two form a cavity, the semiconductor component and the conductive ring body are placed in the cavity, a plurality of conductive copper hooks are fixed side by side on the fixture body, and each high-frequency switch rectifier passes a corresponding conductive copper hook 9 Connect to the electrode of the corresponding conductive segment through a cable. Open the wire on the fixture body Correspondingly, a cable 8 connected to each section of the conductive ring body is arranged in the line slot. In consideration of the rationality of the current product layout, the conductive ring body is divided into 4 sections. Accordingly, the high-frequency switch The number of rectifiers is set to 4, of course, the conductive ring body can also be divided into 6 segments, 8 segments, etc. according to the actual situation.

如此一來,使得導電環本體3的導電方式由傳統的點接觸、線接觸轉變為面接觸,大大提高了電流在晶圓2上分布的均勻性及電流密度,再者,晶圓2與導電環本體3之間存在一定壓力,即使電鍍液發生震盪也不會導致接觸不良現象發生,另外,在彈性墊環5的作用下,使得電鍍液與晶圓2的下表面隔絕,避免在電鍍工序中發生藥水交叉侵蝕現象,從而提高了晶圓2的電鍍質量。 In this way, the conductive manner of the conductive ring body 3 is changed from the traditional point contact and line contact to the surface contact, which greatly improves the uniformity and current density of the current distribution on the wafer 2. Furthermore, the wafer 2 and the conductive There is a certain pressure between the ring bodies 3, and even if the electroplating solution oscillates, it will not cause poor contact. In addition, under the action of the elastic cushion ring 5, the electroplating solution is isolated from the lower surface of the wafer 2 to avoid the plating process. The phenomenon of chemical cross-corrosion occurs in the medium, thereby improving the plating quality of the wafer 2.

在本實施例中,所述凹槽內設置有用於放置導電環本體的環形槽。為了避免了電鍍治具在長期使用過程中導電環本體3發生纏結現象,還可以在凹槽內設置有環形槽用來放置導電環本體3,其形狀與導電環本體3相適配,從而避免了其在壓緊晶圓2的過程中導電環本體3發生翻轉,進而導致晶圓2表面電流分布不均勻的問題。 In this embodiment, an annular groove for placing a conductive ring body is provided in the groove. In order to avoid the entanglement of the conductive ring body 3 during the long-term use of the electroplating jig, a ring groove may be provided in the groove for placing the conductive ring body 3, and its shape is adapted to the conductive ring body 3, thereby The problem that the conductive ring body 3 is turned over during the process of pressing the wafer 2 is avoided, thereby causing the problem of uneven current distribution on the surface of the wafer 2.

在本實施例中,所述凸臺上設置有外螺紋,所述凹槽內壁上設置有與外螺紋相適配的內螺紋,當蓋板通過內、外螺紋下旋時,蓋板對半導體元器件的壓力與下旋距離呈線性關係。當蓋板4通過螺紋下旋時,蓋板4對晶圓2的壓力與下旋距離呈線性關係,便於對壓力進行調整,除此以外,與晶圓2相接觸的導電環本體3不存在受力不均問題,從而保證了晶圓2各區域的導電性一致性,且晶圓2四周的密封性也一致。在本實施例中僅以晶圓為例進行了說明,所述內容也可適用於印刷電路板。 In this embodiment, the boss is provided with an external thread, and the inner wall of the groove is provided with an internal thread adapted to the external thread. When the cover plate is rotated down through the internal and external threads, the cover plate The pressure of semiconductor components is linearly related to the downspin distance. When the cover plate 4 is screwed down by the thread, the pressure of the cover plate 4 on the wafer 2 and the downward rotation distance are linear, which is convenient for adjusting the pressure. In addition, the conductive ring body 3 in contact with the wafer 2 does not exist. The problem of uneven force ensures the conductivity of each region of the wafer 2 is uniform, and the seal around the wafer 2 is also consistent. In this embodiment, only the wafer is used as an example for description, and the content can also be applied to a printed circuit board.

以上公開的僅為本發明的幾個具體實施例,但是本發明並非局限於此,任何本領域的技術人員能思之的變化都應落入本發明的保護範圍。 The above disclosure is only a few specific embodiments of the present invention, but the present invention is not limited thereto, and any change that can be thought by those skilled in the art should fall into the protection scope of the present invention.

Claims (9)

一種導電環,其特徵在於:包括導電環本體,所述導電環本體為分段式結構分布,且由多個導電段組成;每相鄰兩個導電段之間的斷開口填充絕緣膠後通過該絕緣膠進行隔開;所述導電環本體的表面包裹有絕緣膠層;且所述導電環本體設置有至少一個電極和至少一個支撐腳。A conductive ring is characterized in that it comprises a conductive ring body which is distributed in a segmented structure and is composed of a plurality of conductive segments; the opening between each adjacent two conductive segments is filled with insulating glue and passed through The insulating glue is separated; the surface of the conductive ring body is covered with an insulating glue layer; and the conductive ring body is provided with at least one electrode and at least one supporting leg. 如請求項1所述的導電環,其中所述導電環本體的外表面從內向外依序設置有鍍鎳層和鍍銀層,且所述鍍銀層置於鍍鎳層與絕緣膠層之間。The conductive ring according to claim 1, wherein the outer surface of the conductive ring body is sequentially provided with a nickel plating layer and a silver plating layer, and the silver plating layer is disposed between the nickel plating layer and the insulating rubber layer. between. 如請求項2所述的導電環,其中所述鍍鎳層的厚度為3~8μm,且所述鍍銀層的厚度為15~30μm;所述斷開口的尺寸為3~5mm。The conductive ring according to claim 2, wherein the thickness of the nickel plating layer is 3 to 8 μm, and the thickness of the silver plating layer is 15 to 30 μm; and the size of the cutout is 3 to 5 mm. 如請求項1所述的導電環,其中所述導電環本體由不銹鋼製成,且每個導電段上均設置有多個所述支撐腳,且沿其圓周方向均勻分布。The conductive ring according to claim 1, wherein the conductive ring body is made of stainless steel, and each of the conductive segments is provided with a plurality of the support legs and is evenly distributed along its circumferential direction. 一種基於導電環的供電裝置,其特徵在於:包括多個高頻開關整流器和如請求項1至4中任一項所述的導電環,所述高頻開關整流器的數量與導電環的導電段數量相同;且每個高頻開關整流器的負極與對應的導電段相連通;每個高頻開關整流器的正極均連接至陽極板;該導電環連接半導體元器件,且該陽極板與半導體元器件之間為電鍍液;高頻開關整流器給這整個回路提供電壓電流,在高頻開關整流器的電壓電勢作用下,陽極板溶解出金屬陽離子到電鍍液中,電鍍液中的金屬離子隨著電力線的方嚮往半導體元器件移動,最終金屬陽離子在半導體元器件上得到電子析出形成金屬單質,既完成電鍍過程。A power supply device based on a conductive ring, comprising: a plurality of high-frequency switching rectifiers and the conductive ring according to any one of claims 1 to 4, the number of the high-frequency switching rectifiers and a conductive segment of the conductive ring The number is the same; and the negative electrode of each high-frequency switching rectifier is connected to the corresponding conductive segment; the positive electrode of each high-frequency switching rectifier is connected to the anode plate; the conductive ring is connected to the semiconductor component, and the anode plate and the semiconductor component The electroplating solution is provided between the high-frequency switching rectifiers. The high-frequency switching rectifiers provide voltage and current to the entire circuit. Under the action of the voltage potential of the high-frequency switching rectifiers, the anode plate dissolves metal cations into the electroplating solution. The direction moves toward the semiconductor component, and finally metal cations are precipitated on the semiconductor component to form a metal element, which completes the electroplating process. 如請求項5所述的基於導電環的供電裝置,其中每個高頻開關整流器包括依次相連接的防電磁干擾線路濾波器、整流器、濾波器、高頻變壓器、高頻濾波器、mos管、控制芯片和驅動器;所述交流電網依次經過防電磁干擾線路濾波器、整流器、濾波器、高頻變壓器、高頻濾波器、mos管、控制芯片和驅動器後得到穩定的輸出電流。The conductive ring-based power supply device according to claim 5, wherein each high-frequency switching rectifier includes an anti-electromagnetic interference line filter, a rectifier, a filter, a high-frequency transformer, a high-frequency filter, a mos tube, A control chip and a driver; the AC power grid obtains a stable output current after passing through an electromagnetic interference prevention line filter, a rectifier, a filter, a high-frequency transformer, a high-frequency filter, a mos tube, a control chip, and a driver. 一種基於供電裝置的電鍍治具,其特徵在於:包括治具本體、蓋板和如請求項5所述的供電裝置;所述治具本體上設置有與半導體元器件相適配的凹槽,所述供電裝置中的導電環本體設置於所述半導體元器件的下表面;所述蓋板上設置有彈性墊環和外形尺寸與所述凹槽相適配的凸台;所述蓋板對半導體元器件上表面進行壓緊時,凸台落入凹槽內後兩者形成一腔體,所述半導體元器件和導電環本體置於該腔體內,所述治具本體上還並排固定有多個導電銅鈎,且每個高頻開關整流器通過對應的導電銅鈎在通過對應的電纜連接至對應的導電段的電極上。An electroplating jig based on a power supply device, comprising: a jig body, a cover plate and the power supply device according to claim 5; the jig body is provided with a groove adapted to a semiconductor component, The conductive ring body in the power supply device is disposed on the lower surface of the semiconductor component; the cover plate is provided with an elastic backing ring and a boss with an external dimension matching the groove; the cover plate is opposite When the upper surface of the semiconductor component is compacted, the convex part falls into the groove to form a cavity. The semiconductor component and the conductive ring body are placed in the cavity. The fixture body is also fixed side by side. Multiple conductive copper hooks, and each high-frequency switch rectifier is connected to an electrode of a corresponding conductive segment through a corresponding cable through a corresponding conductive copper hook. 如請求項7所述的基於供電裝置的電鍍治具,其中所述凹槽內設置有用於放置導電環本體的環形槽。The electroplating jig based on the power supply device according to claim 7, wherein the groove is provided with an annular groove for placing a conductive ring body. 如請求項7所述的基於供電裝置的電鍍治具,其中所述凸臺上設置有外螺紋,所述凹槽內壁上設置有與外螺紋相適配的內螺紋,當蓋板通過內、外螺紋下旋時,蓋板對半導體元器件的壓力與下旋距離呈線性關係。The electroplating fixture based on the power supply device according to claim 7, wherein the boss is provided with an external thread, and the inner wall of the groove is provided with an internal thread adapted to the external thread. 3. When the external thread is turned down, the pressure of the cover plate on the semiconductor components and the distance of the down-rotation have a linear relationship.
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