TWI664305B - Three dimension revolution and rotation deposition turntable structure - Google Patents

Three dimension revolution and rotation deposition turntable structure Download PDF

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TWI664305B
TWI664305B TW107140205A TW107140205A TWI664305B TW I664305 B TWI664305 B TW I664305B TW 107140205 A TW107140205 A TW 107140205A TW 107140205 A TW107140205 A TW 107140205A TW I664305 B TWI664305 B TW I664305B
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angle
rotation
plate
plating pot
rotating
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TW107140205A
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TW202018108A (en
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陳家璧
薛文皓
羅世欣
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聚昌科技股份有限公司
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Abstract

本發明為一種3D蒸鍍之公自轉鍍鍋結構,其包括:公轉底盤;公轉頂盤藉由支撐件環繞運行於公轉底盤;鍍鍋自轉模組,具有懸臂結合於公轉頂盤;又其齒輪盤結合於懸臂之底側;及其自轉鍍盤結合於懸臂且環繞運行於圓形環繞軌道;以及複數個晶圓載盤,藉由轉軸固設於自轉鍍盤上,又藉由外環狀齒牙與齒輪盤轉動結合。The invention is a 3D vapor-deposited male auto-rotating plating pot structure, which includes: a rotary base; a rotary top plate running around the rotary base by supporting members; a plating pot auto-rotating module having a cantilever coupled to the rotary top plate; The disk is coupled to the bottom side of the cantilever; and its self-rotating plating disk is combined to the cantilever and runs in a circular orbit; and a plurality of wafer carriers are fixed on the self-rotating plating disk by a rotating shaft, and the outer ring teeth The teeth are combined with the rotation of the gear plate.

Description

3D蒸鍍之公自轉鍍鍋結構3D Evaporation of Male Rotary Plating Pot Structure

本發明為一種3D蒸鍍之公自轉鍍鍋結構,特別為一種應用半導體晶圓片蒸鍍之3D蒸鍍之公自轉鍍鍋結構。The invention is a 3D vapor-deposited male auto-rotation plating pot structure, particularly a 3D vapor-deposited male auto-rotation plating pot structure.

中華民國專利公告第00470215號(以下簡稱215號專利),揭露了一種公自轉式晶圓承載器之固定結構,其主要揭露了公轉架及可旋轉的晶圓承載器P13,然而其存在著下列問題: 一、 僅僅只有2旋轉軸P110,P120之旋轉,蒸鍍時晶圓片無法自轉,將產生方向性造成陰影以致膜厚不一致的問題。 二、 晶圓承載器P13必須藉由軸桿AP131之驅動而旋轉,而軸桿AP131再加上必須隨之旋轉的驅動單元,將使的設備的體積增加。 三、 整個晶圓承載器P13必須藉由滾輪P112支撐,且滾輪P112兩側的配種完全不成比例,將造成旋轉結構不穩定及容易損壞。The Republic of China Patent Bulletin No. 00470215 (hereinafter referred to as the 215 patent) discloses a fixed structure of a revolving wafer carrier. It mainly discloses a revolving rack and a rotatable wafer carrier P13. However, the following exist: Questions: 1. Only the rotation of P110, P120 with 2 rotation axes, the wafer cannot rotate during evaporation, and the directivity will cause shadows and the film thickness will be inconsistent. 2. The wafer carrier P13 must be rotated by the drive of the shaft AP131, and the shaft AP131 plus the drive unit that must rotate with it will increase the volume of the equipment. 3. The entire wafer carrier P13 must be supported by the roller P112, and the matching on both sides of the roller P112 is completely disproportionate, which will cause the rotation structure to be unstable and easily damaged.

中華民國專利公告第M316262號(以下簡稱262號專利),揭露了一種真空蒸鍍機的被鍍物承載裝置,其雖然揭露了3旋轉軸旋轉P120,P120,P130之旋轉架、可旋轉的承載盤及可旋轉的旋轉體,然而其存在著下列的問題: 一、 所有承載盤P14都藉由第一支桿P12提供懸吊支撐,將使得驅動軸B1要承受所有的結構支撐力,加上驅動軸B1還要經常性的旋轉,因此容易產生高故障率。 二、 承載盤P14僅以第一支桿P12採用懸吊支撐,使得承載盤P14旋轉時,容易搖晃抖動,因此影響鍍膜品質。 三、 旋轉體P15藉由突桿P152被延伸桿P131撥動而轉動,這樣的結構行為,將容易使旋轉體P15上的晶圓片被過度震動,除了容易造成晶圓片的損傷外,也容易讓晶圓片在突然震動的情況下而墜落。 四、 旋轉體P15轉動時,將使晶圓片由上面直接跳躍式翻轉至下面,並非線性轉動,因此將嚴重影響鍍膜均勻性。The Republic of China Patent Bulletin No. M316262 (hereinafter referred to as the 262 patent), discloses a to-be-plated bearing device of a vacuum evaporation machine. Although it discloses a rotating frame with 3 rotation axes rotating P120, P120, and P130, and a rotatable bearing Disk and rotatable rotating body, however, it has the following problems: 1. All load-bearing disks P14 provide suspension support by the first support rod P12, which will cause the drive shaft B1 to bear all structural support forces, plus The drive shaft B1 also rotates frequently, so it is easy to produce a high failure rate. 2. The carrier plate P14 is suspended by only the first support rod P12, which makes the carrier plate P14 easy to shake when it rotates, thus affecting the coating quality. 3. The rotating body P15 is rotated by the extension rod P131 being turned by the protruding rod P152. Such a structural behavior will easily cause the wafer on the rotating body P15 to be excessively shaken. In addition to easily causing damage to the wafer, It is easy for the wafer to fall under sudden vibration. 4. When the rotating body P15 is rotated, the wafer will be flipped directly from the top to the bottom and rotated non-linearly, so the uniformity of the coating will be seriously affected.

此外、隨著半導體製程技術的不斷提升,目前製作在晶圓片上的電子元件,有許多已經具有更複雜的三維(3D)結構,因為三維結構將從不同角度都會產生許多不同的陰影,而上述的蒸鍍機,無法有效克服三維電子元件421蒸鍍製程上陰影的問題,也就是階梯覆蓋不佳的問題。In addition, with the continuous improvement of semiconductor process technology, many of the electronic components currently fabricated on wafers already have more complex three-dimensional (3D) structures, because three-dimensional structures will produce many different shadows from different angles, and the above The evaporation machine cannot effectively overcome the problem of shadows on the three-dimensional electronic component 421 evaporation process, that is, the problem of poor step coverage.

本發明為一種3D蒸鍍之公自轉鍍鍋結構,其主要係要解決鍍鍋對晶圓片進行蒸鍍時,鍍鍋結構支撐不穩、無法提供線性運作、蒸鍍角設計不佳導致鍍膜厚度均勻性不佳、階梯覆蓋(Step Coverage)差、及鍍膜結構不一致的問題。The invention is a 3D evaporation public auto-rotation plating pot structure, which mainly solves the problem of unstable support of the plating pot structure, unable to provide linear operation, and poor design of the evaporation angle when the wafer is vaporized by the plating pot Problems such as poor thickness uniformity, poor step coverage, and inconsistent coating structure.

本發明提供一種3D蒸鍍之公自轉鍍鍋結構,其包括:一公轉底盤,其為一圓形環繞軌道;一公轉頂盤,其具有複數個支撐件,每一支撐件底部藉由一公轉轉輪,環繞運行於公轉底盤;複數個鍍鍋自轉模組,每一鍍鍋自轉模組包括:一懸臂,其以一傾斜角結合於公轉頂盤;一齒輪盤,其結合於懸臂之底側,齒輪盤形成有一內環狀齒牙;及一自轉鍍盤,其藉由一轉軸結合於懸臂,又自轉鍍盤之端部,係環繞線性運轉於公轉底盤;以及複數個晶圓載盤,每一晶圓載盤藉由一轉軸固設於一自轉鍍盤上,又藉由每一晶圓載盤之一外環狀齒牙與內環狀齒牙產生線性平穩轉動結合。The invention provides a 3D vapor-deposited male self-rotating plating pot structure, which includes: a revolution base plate, which is a circular orbit; a revolution top plate, which has a plurality of support members, and the bottom of each support member is rotated by a revolution A runner runs around the revolution chassis; a plurality of plating pan rotation modules, each of the plating pan rotation modules includes: a cantilever, which is coupled to the revolution top disc at an inclined angle; a gear disc, which is coupled to the bottom of the cantilever On the side, the gear plate is formed with an inner ring tooth; and a self-rotating plating plate, which is coupled to a cantilever through a rotating shaft, and the end of the self-rotating plating plate is linearly running on a revolution chassis; and a plurality of wafer carrier plates, Each wafer carrier is fixed on a self-rotating plating plate by a rotating shaft, and a linear and smooth rotation combination is generated by an outer ring tooth and an inner ring tooth of each wafer carrier.

藉由本發明之實施,至少可以達成下列之進步功效: 一、 可以提升鍍鍋對晶圓片進行蒸鍍時,因蒸鍍角設計導致鍍膜厚度均勻性更佳。 二、 所有公轉及自轉都能以線性平穩的方式運作,且晶圓載盤可線性自轉。 三、 藉由晶圓載盤線性平穩自轉,可提升階梯覆蓋狀態及使鍍膜結構一致。 四、 藉由上下支撐,提供穩固的結構支撐。With the implementation of the present invention, at least the following improved effects can be achieved: 1. When a wafer can be lifted to vaporize a wafer, the uniformity of the thickness of the coating is better due to the design of the evaporation angle. 2. All revolutions and rotations can be operated in a linear and stable manner, and the wafer carrier can be rotated linearly. 3. The linear and smooth rotation of the wafer carrier can improve the step coverage and make the coating structure consistent. Fourth, by providing up and down support, provide solid structural support.

為了使任何熟習相關技藝者了解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易的理解本發明相關之目的及優點,因此將在實施方式中詳細敘述本發明之詳細特徵以及優點。In order to allow any person skilled in the art to understand and implement the technical content of the present invention, and according to the content disclosed in this specification, the scope of patent applications and the drawings, any person skilled in the art can easily understand the related purposes and advantages of the present invention. Therefore, detailed features and advantages of the present invention will be described in detail in the embodiments.

如第2圖至第4圖所示,本實施例為一種3D蒸鍍之公自轉鍍鍋結構100,其包括:一公轉底盤10;一公轉頂盤20;複數個鍍鍋自轉模組30;以及複數個晶圓載盤40。As shown in FIGS. 2 to 4, this embodiment is a 3D vapor-deposited male auto-rotating plating pot structure 100, which includes: a revolution base 10, a revolution top plate 20, and a plurality of plating pot rotation modules 30; And a plurality of wafer carriers 40.

公轉底盤10,作為整個公自轉鍍鍋結構100之底部支撐,又為了能達成旋轉之功效,公轉底盤10可以為一圓形環繞軌道。The revolving chassis 10 is used as the bottom support of the entire revolving plating structure 100. In order to achieve the effect of rotation, the revolving chassis 10 may be a circular orbit.

公轉頂盤20,其具有複數個支撐件210使公轉頂盤20能架設在公轉底盤10上。又為了使公轉頂盤20有效的旋轉,因此在每一支撐件210底部可以設置一公轉轉輪220。藉由公轉轉輪220可以使公轉頂盤20順暢的環繞運行於公轉底盤10上。The orbiting top plate 20 has a plurality of supporting members 210 so that the orbiting top plate 20 can be mounted on the orbiting bottom plate 10. In order to effectively rotate the revolving top plate 20, a revolving wheel 220 may be provided at the bottom of each support member 210. The revolving wheel 220 can smoothly run the revolving top disc 20 on the revolving chassis 10.

為了使公轉頂盤20能以最簡單又最穩固的方式設置於公轉底盤10上,因此複數個支撐件210可以為三個支撐件210,又每一支撐件210彼此係以等間距方式排列,藉此可以形成三足鼎立之結構。In order to enable the orbiting top plate 20 to be arranged on the orbiting bottom plate 10 in the simplest and most stable manner, the plurality of supporting members 210 may be three supporting members 210, and each supporting member 210 is arranged at an equal interval from each other. This can form a three-legged structure.

又為了使3D蒸鍍之公自轉鍍鍋結構100能規律的運轉,因此公轉底盤10與公轉頂盤20彼此係為相互平行之結構,而且公轉底盤10與公轉頂盤20均以水平狀態設置。In order to make the 3D vapor-deposited self-rotating plating pot structure 100 operate regularly, the orbiting chassis 10 and the orbiting pan 20 are mutually parallel structures, and both the orbiting chassis 10 and the orbiting pan 20 are arranged horizontally.

如第5圖所示,複數個鍍鍋自轉模組30,每一鍍鍋自轉模組30包括: 一懸臂310;一齒輪盤320;及一自轉鍍盤330。上述之複數個鍍鍋自轉模組30,係可以為三個鍍鍋自轉模組30,且彼此以等間距相互對稱之方式排列。As shown in FIG. 5, a plurality of plating pot rotation modules 30 each include: a cantilever 310; a gear plate 320; and a rotation plating plate 330. The above-mentioned plurality of plating pan rotation modules 30 can be three plating pan rotation modules 30 and are arranged at equal intervals and symmetrical to each other.

如第6圖所示,懸臂310,係以一傾斜角結合於公轉頂盤20。懸臂310主要用以支撐齒輪盤320及自轉鍍盤330。為了因應蒸鍍時,不同的產品有不同傾斜角的需求,因此懸臂310係可設計成藉由一角度調整器50與公轉頂盤20結合。As shown in FIG. 6, the cantilever 310 is coupled to the orbiting top plate 20 at an inclined angle. The cantilever 310 is mainly used to support the gear plate 320 and the rotation plating plate 330. In order to respond to the requirements of different tilt angles of different products during evaporation, the cantilever 310 can be designed to be combined with the orbit top plate 20 through an angle adjuster 50.

上述之角度調整器50,可以包括一第一角度調整單元510及一第二角度調整單元520,藉由第一角度調整單元510及第二角度調整單元520的使用,可以對蒸鍍角θ產生不同角度的微調。The above-mentioned angle adjuster 50 may include a first angle adjustment unit 510 and a second angle adjustment unit 520. By using the first angle adjustment unit 510 and the second angle adjustment unit 520, the evaporation angle θ can be generated. Fine-tuning at different angles.

本實施例係將自轉鍍盤330與公轉頂盤20所形的18度夾角定義為一基準角度X。上述之第一角度調整單元510之調整角度可以為基準角度之+3、+1、-1或-3度。又第二角度調整單元520之調整角度可以為基準角度之+2、0、或-2度。In this embodiment, an 18-degree included angle formed by the self-rotating plating plate 330 and the orbiting top plate 20 is defined as a reference angle X. The adjustment angle of the first angle adjustment unit 510 may be +3, +1, -1, or -3 degrees of the reference angle. The adjustment angle of the second angle adjustment unit 520 may be +2, 0, or -2 degrees of the reference angle.

齒輪盤320,其係固定結合於懸臂310之底側,齒輪盤320內具有一圓形開口321,又圓形開口321形成有一內環狀齒牙322。齒輪盤320主要用以提供晶圓載盤40旋轉時之施力點。The gear plate 320 is fixedly coupled to the bottom side of the cantilever 310. The gear plate 320 has a circular opening 321 therein, and the circular opening 321 is formed with an inner annular tooth 322. The gear plate 320 is mainly used to provide a force point when the wafer carrier 40 rotates.

自轉鍍盤330,其為圓形盤狀結構。自轉鍍盤330之圓心係藉由一轉軸60結合於懸臂310,又自轉鍍盤330之端部,係環繞線性運轉於公轉底盤10上,此時公轉底盤10也分擔了公自轉鍍鍋結構100所需要的結構支撐力,將使得公自轉鍍鍋結構100在運作時能更為平穩。The self-rotating plating plate 330 is a circular plate-like structure. The center of the rotation plating plate 330 is coupled to the cantilever 310 through a rotating shaft 60, and the end of the rotation plating plate 330 runs linearly on the revolution chassis 10. At this time, the revolution chassis 10 also shares the revolution plating structure 100 The required structural support force will make the self-rotating plating pot structure 100 more stable during operation.

藉由上述之結構,當公轉頂盤20旋轉時,將帶動自轉鍍盤330移動。又自轉鍍盤330移動時,因為與公轉底盤10產生交互作用,所以在轉軸60的支撐下,自轉鍍盤330因此產生旋轉動作。With the above structure, when the revolving top plate 20 rotates, the self-rotating plating plate 330 will be driven to move. When the self-rotating plating plate 330 moves, it interacts with the orbiting chassis 10, so the self-rotating plating plate 330 rotates under the support of the rotating shaft 60.

複數個晶圓載盤40,每一晶圓載盤40用以承載待蒸鍍之晶圓片420或物件,又每一晶圓載盤40係藉由一轉軸60固設於自轉鍍盤330上。設置時、每一晶圓載盤40可以等間距的排列方式設置於自轉鍍盤330之同一個同心圓上,又藉由每一晶圓載盤40之一外環狀齒牙410與內環狀齒牙322產生線性平穩轉動式結合。A plurality of wafer carriers 40, each wafer carrier 40 is used to carry a wafer 420 or an object to be evaporated, and each wafer carrier 40 is fixed on the autorotation plate 330 by a rotating shaft 60. At the time of setting, each wafer carrier 40 can be arranged on the same concentric circle of the auto-rotation plating plate 330 in an equidistant arrangement, and one outer ring tooth 410 and an inner ring tooth of each wafer carrier 40 The teeth 322 produce a linear and smooth rotation type joint.

藉由上述之結構,將使自轉鍍盤330旋轉時帶動每一晶圓載盤40移動。又晶圓載盤40移動時,晶圓載盤40之外環狀齒牙410將與內環狀齒牙322產生交互作用,因此在轉軸60的支撐下,將使得晶圓載盤40產生線性旋轉動作。With the above-mentioned structure, each of the wafer carriers 40 is moved when the self-rotating plating plate 330 is rotated. When the wafer carrier 40 moves, the outer ring teeth 410 of the wafer carrier 40 and the inner ring teeth 322 interact with each other. Therefore, under the support of the rotating shaft 60, the wafer carrier 40 will be caused to rotate linearly.

本實施例係利用3個軸心,使鍍鍋進行公轉及自轉,藉此使晶圓片420與蒸鍍源70間產生更多位置及角度的變化,進而提升蒸鍍的均勻性、達成較佳的階梯覆蓋(Step Coverage)以及使鍍膜結構比較一致。This embodiment uses three axes to revolve and rotate the plating pot, thereby causing more position and angle changes between the wafer 420 and the evaporation source 70, thereby improving the uniformity of the evaporation and achieving a relatively Good Step Coverage and consistent coating structure.

如第7圖及第8圖所示,關於第1軸910,其為公轉底盤10與公轉頂盤20中心點所形成的軸線;關於第2軸920,係指自轉鍍盤330其轉軸60之中心線;關於第3軸930,其係為晶圓載盤40其轉軸60之中心線。As shown in FIGS. 7 and 8, the first axis 910 is an axis formed by the center points of the revolution chassis 10 and the revolution top disc 20; and the second axis 920 refers to the axis of the rotation plate 60 of the rotation plating plate 330. Centerline; regarding the third axis 930, it is the centerline of the wafer carrier 40 and its rotation axis 60.

運作時,在馬達的驅動下,公自轉鍍鍋結構100沿著第1軸910進行公轉,此時自轉鍍盤330及晶圓載盤40也將隨著公轉;在自轉鍍盤33公轉的同時,自轉鍍盤33也會沿著第2軸920進行自轉;又自轉鍍盤330自轉時也將帶動晶圓載盤40沿著第3軸930自轉。During operation, driven by a motor, the orbiting plating pot structure 100 revolves along the first axis 910. At this time, the orbiting plating plate 330 and the wafer tray 40 will also revolve; while the orbiting plating plate 33 orbits, The rotation plating plate 33 will also rotate along the second axis 920; when the rotation plating plate 330 rotates, the wafer carrier 40 will also be rotated along the third axis 930.

由於上述的公、自轉都是以線性方式進行,晶圓載盤40自轉時又搭配自轉鍍盤330自轉,可以讓晶圓片420與蒸鍍源70的角度出現多樣的變化,除了可以改善晶圓片420中心與邊緣的蒸鍍角θ差異,使三維電子元件421蒸鍍的均勻性及階梯覆蓋(Step Coverage) 提升外,也能以動態的方式克服三維電子元件421因為立體圖案結構產生陰影,同時能增加鍍膜的均勻性進而使鍍膜結構更為一致。Since the above-mentioned revolution and rotation are performed in a linear manner, the wafer carrier 40 rotates with the rotation of the plating plate 330, which can cause various changes in the angle of the wafer 420 and the evaporation source 70, in addition to improving the wafer The vapor deposition angle θ difference between the center and the edge of the sheet 420 improves the uniformity of vapor deposition and step coverage of the three-dimensional electronic component 421, and can also dynamically overcome the shadow of the three-dimensional electronic component 421 due to the three-dimensional pattern structure. At the same time, the uniformity of the coating can be increased to make the coating structure more consistent.

當蒸鍍角θ不同,鍍膜厚度將使鍍膜的結構產生差異,因此在蒸鍍角θ度的設計,係可大於或等於70度,又有關蒸鍍角θ度的定義,係指晶圓載盤40表面與一蒸鍍角射線940所形成之夾角,又蒸鍍角射線940係蒸鍍源70與晶圓載盤40之一載盤邊緣所形成的直線。When the evaporation angle θ is different, the thickness of the coating film will make a difference in the structure of the coating. Therefore, the design of the evaporation angle θ degree can be greater than or equal to 70 degrees, and the definition of the evaporation angle θ degree refers to the wafer carrier. The angle formed by the surface 40 and an evaporation angle ray 940 is a straight line formed by the evaporation source 70 and the edge of one of the wafer carriers 40.

為了達成較佳的階梯覆蓋,任一晶圓載盤40其最大之蒸鍍角θ度與最小之蒸鍍角θ度之角度差,係可設計成大於或等於10度。有關上述的蒸鍍角θ又依照不同產品的需求,可以藉由第一角度調整單元510或第二角度調整單元520進行微調。In order to achieve better step coverage, the difference in angle between the maximum evaporation angle θ degree and the minimum evaporation angle θ degree of any wafer carrier 40 may be designed to be greater than or equal to 10 degrees. The above-mentioned evaporation angle θ can be fine-tuned by the first angle adjustment unit 510 or the second angle adjustment unit 520 according to the requirements of different products.

惟上述各實施例係用以說明本發明之特點,其目的在使熟習該技術者能瞭解本發明之內容並據以實施,而非限定本創作之專利範圍,故凡其他未脫離本發明所揭示之精神而完成之等效修飾或修改,仍應包含在以下所述之申請專利範圍中。However, the above embodiments are used to explain the characteristics of the present invention, and the purpose is to enable those skilled in the art to understand the content of the present invention and implement it based on it, rather than to limit the scope of the patent for this creation. Equivalent modifications or modifications made by the spirit of disclosure should still be included in the scope of patent application described below.

B1‧‧‧驅動軸B1‧‧‧Drive shaft

P112‧‧‧滾輪 P112‧‧‧roller

P12‧‧‧第一支桿 P12‧‧‧First pole

P120,P120‧‧‧旋轉軸 P120, P120‧‧‧rotation axis

P130‧‧‧旋轉軸 P130‧‧‧Rotary shaft

P13‧‧‧晶圓承載器 P13‧‧‧Wafer Carrier

AP131‧‧‧軸桿 AP131‧‧‧Shaft

P131‧‧‧延伸桿 P131‧‧‧Extension rod

P14‧‧‧承載盤 P14‧‧‧carriage tray

P15‧‧‧旋轉體 P15‧‧‧Rotating body

P152‧‧‧突桿 P152‧‧‧Stud

100‧‧‧3D蒸鍍之公自轉鍍鍋結構 Structure of 100‧‧‧3D vapor-deposited male self-rotating plating pot

10‧‧‧公轉底盤 10‧‧‧ revolution chassis

20‧‧‧公轉頂盤 20‧‧‧revolving top plate

210‧‧‧支撐件 210‧‧‧ support

220‧‧‧公轉轉輪 220‧‧‧Rotary runner

30‧‧‧鍍鍋自轉模組 30‧‧‧Plating pan rotation module

310‧‧‧懸臂 310‧‧‧ cantilever

320‧‧‧齒輪盤 320‧‧‧Gear plate

321‧‧‧圓形開口 321‧‧‧round opening

322‧‧‧內環狀齒牙 322‧‧‧Internal ring tooth

330‧‧‧自轉鍍盤 330‧‧‧rotating plate

40‧‧‧晶圓載盤 40‧‧‧ Wafer Carrier

410‧‧‧外環狀齒牙 410‧‧‧ Outer annular teeth

420‧‧‧晶圓片 420‧‧‧wafer

421‧‧‧三維電子元件 421‧‧‧Three-dimensional electronic components

50‧‧‧角度調整器 50‧‧‧Angle Adjuster

510‧‧‧第一角度調整單元 510‧‧‧First angle adjustment unit

520‧‧‧第二角度調整單元 520‧‧‧Second Angle Adjustment Unit

60‧‧‧轉軸 60‧‧‧rotation shaft

70‧‧‧蒸鍍源 70‧‧‧ evaporation source

910‧‧‧第1軸 910‧‧‧ 1st axis

920‧‧‧第2軸 920‧‧‧ 2nd axis

930‧‧‧第3軸 930‧‧‧3rd axis

940‧‧‧蒸鍍角射線 940‧‧‧Evaporation angle rays

θ‧‧‧蒸鍍角 θ‧‧‧ evaporation angle

X‧‧‧基準角度 X‧‧‧ reference angle

[第1圖]為習知之一種公自轉式晶圓承載器之固定結構圖; [第2圖] 為習知之一種真空蒸鍍機的被鍍物承載裝置圖; [第3圖]為一種具有本發明3D蒸鍍之公自轉鍍鍋結構之蒸鍍機實施例圖; [第4圖]為本發明之一種3D蒸鍍之公自轉鍍鍋結構實施例圖; [第5圖]為本發明之一種鍍鍋自轉模組實施例圖; [第6圖]為本發明之一種角度調整器運作及局部放大實施例圖; [第7圖]為本發明之第1軸、第2軸、及第3軸位置實施例圖;以及 [第8圖]為三維電子元件在晶圓載盤及自轉鍍盤上之位置關係實施例圖。[Fig. 1] is a fixed structure diagram of a conventional self-rotating wafer carrier; [Fig. 2] is a diagram of a conventional vacuum evaporation machine's object-bearing device; [Fig. 3] is a Embodiment diagram of a 3D vapor deposition male auto-rotation pot structure of the present invention; [FIG. 4] is a diagram of a 3D vapor deposition male auto-rotation pot structure example of the present invention; [FIG. 5] is the present invention [Figure 6] is a diagram of an embodiment of an angle adjuster operation and a partially enlarged embodiment of the present invention; [Figure 7] is a first axis, a second axis, and The third axis position embodiment diagram; and [FIG. 8] is an embodiment position diagram of a three-dimensional electronic component on a wafer carrier and a spin plate.

Claims (10)

一種3D蒸鍍之公自轉鍍鍋結構,其包括: 一公轉底盤,其為一圓形環繞軌道; 一公轉頂盤,其具有複數個支撐件,每一該支撐件底部藉由一公轉轉輪,環繞運行於該公轉底盤; 複數個鍍鍋自轉模組,每一該鍍鍋自轉模組包括: 一懸臂,其以一傾斜角結合於該公轉頂盤; 一齒輪盤,其結合於該懸臂底側,該齒輪盤形成有一內環狀齒牙;及 一自轉鍍盤,其藉由一轉軸結合於該懸臂,又該自轉鍍盤之端部,係環繞線性運轉於該公轉底盤;以及 複數個晶圓載盤,每一該晶圓載盤藉由一轉軸固設於一該自轉鍍盤上,又藉由每一該晶圓載盤之一外環狀齒牙與該內環狀齒牙,產生線性平穩轉動結合。A 3D vapor-deposited male self-rotating plating pot structure, comprising: a revolution base plate, which is a circular orbit; a revolution top plate, which has a plurality of support members, and a bottom of each support member is provided with a revolution wheel. , Which runs on the orbit chassis; a plurality of plated pan rotation modules, each of which includes: a cantilever, which is coupled to the orbit top plate at an inclined angle; a gear plate, which is coupled to the cantilever On the bottom side, the gear plate is formed with an inner ring tooth; and a self-rotating plated plate, which is coupled to the cantilever by a rotating shaft, and an end portion of the self-rotating plated plate runs linearly around the orbiting plate; and a plurality of Wafer carriers, each of which is fixed on a self-rotating plated plate by a rotating shaft, and is produced by an outer ring tooth and an inner ring tooth of each wafer carrier Linear smooth rotation combined. 如申請專利範圍第1項所述之公自轉鍍鍋結構,其中該懸臂係藉由一角度調整器與該公轉頂盤結合。According to the public auto-rotation plating pot structure described in item 1 of the patent application scope, wherein the cantilever is combined with the orbital top plate through an angle adjuster. 如申請專利範圍第2項所述之公自轉鍍鍋結構,其中該角度調整器包括一第一角度調整單元及一第二角度調整單元,又將該自轉鍍盤與該公轉頂盤所形的18度夾角定義為一基準角度。According to the structure of a male autorotation plating pot described in item 2 of the scope of patent application, wherein the angle adjuster includes a first angle adjustment unit and a second angle adjustment unit, and the autorotation plate and the orbit top plate are shaped An angle of 18 degrees is defined as a reference angle. 如申請專利範圍第3項所述之公自轉鍍鍋結構,其中該第一角度調整單元之調整角度為該基準角度之+3、+1、-1或-3度。According to the public auto-rotation plating pot structure described in item 3 of the scope of patent application, wherein the adjustment angle of the first angle adjustment unit is +3, +1, -1, or -3 degrees of the reference angle. 如申請專利範圍第3項所述之公自轉鍍鍋結構,其中該第二角度調整單元之調整角度為該基準角度之+2、0、或-2度。According to the public auto-rotation plating pot structure described in item 3 of the scope of patent application, wherein the adjustment angle of the second angle adjustment unit is +2, 0, or -2 degrees of the reference angle. 如申請專利範圍第1項所述之公自轉鍍鍋結構,其中蒸鍍角度係大於或等於70度,又該蒸鍍角度係晶圓載盤表面與一蒸鍍角射線所形成之夾角,又該蒸鍍角射線係蒸鍍源與該晶圓載盤之一載盤邊緣所形成的直線。According to the public auto-rotation plating pot structure described in item 1 of the patent application scope, wherein the evaporation angle is greater than or equal to 70 degrees, and the evaporation angle is the angle formed by the surface of the wafer carrier and an evaporation angle ray, and the The evaporation angle ray is a straight line formed by the evaporation source and an edge of one of the wafer carriers. 如申請專利範圍第6項所述之公自轉鍍鍋結構,其中最大之該蒸鍍角度與最小之該蒸鍍角度之角度差係大於或等於10度。According to the structure of the male auto-rotation plating pot described in item 6 of the scope of patent application, the angle difference between the largest evaporation angle and the smallest evaporation angle is greater than or equal to 10 degrees. 如申請專利範圍第1項所述之公自轉鍍鍋結構,其中該公轉底盤與該公轉頂盤係相互平行且呈水平狀態設置。According to the structure of a male auto-rotating plating pot as described in item 1 of the scope of patent application, wherein the orbiting base and the orbiting top plate are arranged in parallel with each other and in a horizontal state. 如申請專利範圍第1項所述之公自轉鍍鍋結構,其中該複數個支撐件為三個支撐件,且彼此以等間距方式排列。According to the public auto-rotation plating pot structure described in item 1 of the patent application scope, wherein the plurality of support members are three support members and are arranged at an equal interval from each other. 如申請專利範圍第1項所述之公自轉鍍鍋結構,其中該複數個鍍鍋自轉模組係為三個鍍鍋自轉模組,且彼此以等間距方式排列。According to the public rotation plating pot structure described in item 1 of the scope of patent application, wherein the plurality of plating pot rotation modules are three plating pot rotation modules, and are arranged at equal intervals from each other.
TW107140205A 2018-11-13 2018-11-13 Three dimension revolution and rotation deposition turntable structure TWI664305B (en)

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Publication number Priority date Publication date Assignee Title
CN115110038A (en) * 2022-06-29 2022-09-27 北海惠科半导体科技有限公司 Evaporation coating device and coating method

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TW470215U (en) * 2001-01-03 2001-12-21 Mosel Vitelic Inc Fixing structure of planetary-rotation type wafer carrier
TWM316262U (en) * 2007-01-29 2007-08-01 Highlight Optoelectronics Inc The loading device for plated article of Vacuum Evaporator
US20120145080A1 (en) * 2010-12-13 2012-06-14 Youngkyou Park Substrate support unit, and apparatus and method for depositing thin layer using the same
TWM509808U (en) * 2015-04-10 2015-10-01 Junsun Tech Co Ltd Angled-adjustable coating apparatus

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Publication number Priority date Publication date Assignee Title
TW470215U (en) * 2001-01-03 2001-12-21 Mosel Vitelic Inc Fixing structure of planetary-rotation type wafer carrier
TWM316262U (en) * 2007-01-29 2007-08-01 Highlight Optoelectronics Inc The loading device for plated article of Vacuum Evaporator
US20120145080A1 (en) * 2010-12-13 2012-06-14 Youngkyou Park Substrate support unit, and apparatus and method for depositing thin layer using the same
TWM509808U (en) * 2015-04-10 2015-10-01 Junsun Tech Co Ltd Angled-adjustable coating apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115110038A (en) * 2022-06-29 2022-09-27 北海惠科半导体科技有限公司 Evaporation coating device and coating method
CN115110038B (en) * 2022-06-29 2024-01-12 北海惠科半导体科技有限公司 Evaporation coating device and coating method

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