TW202018108A - Three dimension revolution and rotation deposition turntable structure - Google Patents

Abstract

This invention relates to a three dimension revolution and rotation deposition turntable structure, which comprises: a revolution chassis; a revolution top plate running around the revolution chassis by the support member; rotation turntable modules coupled to the revolution top plate by cantilevers and their gear plates coupled to the bottom sides of the cantilevers; rotating plates combined with a cantilevers and running the around revolution chassis; and a plurality of wafer carriers fixed on the rotating plates by rotating shafts and combined with the gear plates by the outer annular gear.

Description

Structure of 3D evaporation plating male rotation plating pot

The present invention is a 3D vaporization public rotation plating pot structure, in particular a 3D vaporization public rotation plating pot structure using semiconductor wafer evaporation.

Republic of China Patent Announcement No. 00470215 (hereinafter referred to as Patent No. 215), discloses a fixed structure of a self-rotating wafer carrier, which mainly discloses a revolving frame and a rotatable wafer carrier P13, however, there are the following Questions: 1. There are only two rotation axes P110 and P120, and the wafers cannot rotate during evaporation, which will cause the problem of directivity causing shadows and inconsistent film thickness. 2. The wafer carrier P13 must be rotated by the shaft AP131, and the shaft AP131 plus the drive unit that must rotate with it will increase the volume of the equipment. 3. The entire wafer carrier P13 must be supported by the roller P112, and the two sides of the roller P112 are completely disproportionate, which will cause the rotating structure to be unstable and easily damaged.

Republic of China Patent Announcement No. M316262 (hereinafter referred to as Patent No. 262), which discloses a plated object carrying device of a vacuum evaporation machine, although it discloses a three-axis rotary shaft rotating P120, P120, P130 rotating frame, rotatable bearing The disk and the rotatable rotating body, however, have the following problems: 1. All bearing disks P14 are provided with suspension support by the first supporting rod P12, which will make the drive shaft B1 bear all the structural support forces, plus The drive shaft B1 also rotates frequently, so it is prone to a high failure rate. 2. The bearing plate P14 is only suspended and supported by the first supporting rod P12, so that when the bearing plate P14 rotates, it is easy to shake and jitter, thus affecting the coating quality. 3. The rotating body P15 is rotated by the protruding rod P152 being pulled by the extension rod P131. Such a structural behavior will easily cause the wafer on the rotating body P15 to be excessively vibrated. In addition to easily causing damage to the wafer, It is easy for the wafer to fall under sudden vibration. 4. When the rotating body P15 rotates, it will make the wafer jump from the top to the bottom directly and rotate non-linearly, so it will seriously affect the uniformity of the coating.

In addition, with the continuous improvement of semiconductor process technology, many electronic components currently fabricated on wafers already have more complex three-dimensional (3D) structures, because three-dimensional structures will produce many different shadows from different angles. The vapor deposition machine cannot effectively overcome the shadow problem on the vapor deposition process of the three-dimensional electronic component 421, that is, the problem of poor step coverage.

The present invention is a 3D vapor deposition public rotation plating pot structure, which mainly aims to solve the problem that when the plating pot performs vapor deposition on the wafer, the plating pot structure is not stable, cannot provide linear operation, and the design of the evaporation angle is poor, resulting in coating Poor thickness uniformity, poor step coverage, and inconsistent coating structure.

The invention provides a 3D vaporization male rotation plating pot structure, which includes: a revolution bottom plate, which is a circular surrounding track; a revolution top plate, which has a plurality of support pieces, and the bottom of each support piece is rotated by a revolution The runner runs around the revolution chassis; a plurality of plating pan rotation modules, each plating pan rotation module includes: a cantilever, which is coupled to the revolving top plate at an inclined angle; and a gear plate, which is coupled to the bottom of the cantilever On the side, the gear plate is formed with an inner ring-shaped tooth; and a rotation plating plate, which is coupled to the cantilever by a rotating shaft, and the end of the rotation plating plate, runs linearly around the revolution chassis; and a plurality of wafer carrier plates, Each wafer carrier is fixed on a self-rotating plating disc by a rotating shaft, and a linear and stable rotation combination is generated by an outer ring tooth and an inner ring tooth of each wafer carrier.

Through the implementation of the present invention, at least the following improved effects can be achieved: 1. It can increase the thickness of the coating film due to the design of the evaporation angle when the plating pot is used for vapor deposition of the wafer. 2. All revolutions and rotations can operate in a linear and stable manner, and the wafer carrier can rotate linearly. 3. The linear and smooth rotation of the wafer carrier can improve the step coverage and make the coating structure consistent. Fourth, by supporting up and down, provide a solid structural support.

In order to let any person skilled in the art understand the technical content of the present invention and implement it accordingly, and according to the content, patent application scope and drawings disclosed in this specification, any person skilled in the art can easily understand the purpose and advantages related to the present invention Therefore, the detailed features and advantages of the present invention will be described in detail in the embodiments.

As shown in FIGS. 2 to 4, this embodiment is a 3D vaporized male rotation plating pot structure 100, which includes: a revolution bottom plate 10; a revolution top plate 20; a plurality of plating pot rotation modules 30; And a plurality of wafer carriers 40.

The revolving chassis 10 serves as the bottom support of the entire rotatable pan-plating pan structure 100, and in order to achieve the rotation effect, the revolving chassis 10 may be a circular orbit.

The revolving top plate 20 has a plurality of support members 210 so that the revolving top plate 20 can be erected on the revolving bottom plate 10. In order to effectively rotate the revolving top plate 20, a revolving revolver 220 may be provided at the bottom of each supporting member 210. The revolving top wheel 20 can make the revolving top plate 20 smoothly run on the revolving bottom plate 10.

In order to allow the revolving top plate 20 to be installed on the revolving bottom plate 10 in the simplest and most stable manner, the plurality of support members 210 can be three support members 210, and each support member 210 is arranged at equal intervals from each other. This can form a three-legged structure.

In addition, in order to enable the 3D vapor deposition revolution rotation pan structure 100 to operate regularly, the revolution chassis 10 and the revolution top tray 20 are parallel to each other, and the revolution chassis 10 and the revolution top tray 20 are both arranged in a horizontal state.

As shown in FIG. 5, a plurality of plating pan rotation modules 30, each plating pan rotation module 30 includes: a cantilever 310; a gear plate 320; and a rotation plating plate 330. The plurality of plating pan rotation modules 30 described above may be three plating pan rotation modules 30, and are arranged in a symmetrical manner with each other at equal intervals.

As shown in FIG. 6, the cantilever 310 is coupled to the revolving top plate 20 at an inclined angle. The cantilever 310 is mainly used to support the gear plate 320 and the rotation plating plate 330. In order to meet the requirements of different products with different inclination angles during vapor deposition, the cantilever 310 can be designed to be combined with the revolution top plate 20 by an angle adjuster 50.

The above-mentioned angle adjuster 50 may include a first angle adjusting unit 510 and a second angle adjusting unit 520. By using the first angle adjusting unit 510 and the second angle adjusting unit 520, the vapor deposition angle θ can be generated Fine-tuning from different angles.

In this embodiment, the 18-degree angle formed by the rotation plating plate 330 and the revolution top plate 20 is defined as a reference angle X. The adjustment angle of the aforementioned first angle adjustment unit 510 may be +3, +1, -1, or -3 degrees of the reference angle. In addition, the adjustment angle of the second angle adjustment unit 520 may be +2, 0, or -2 degrees of the reference angle.

The gear plate 320 is fixedly coupled to the bottom side of the cantilever 310. The gear plate 320 has a circular opening 321, and the circular opening 321 is formed with an inner ring tooth 322. The gear plate 320 is mainly used to provide a force application point when the wafer carrier 40 rotates.

The rotation plating plate 330 is a circular plate-like structure. The center of the rotation plating plate 330 is coupled to the cantilever 310 by a rotating shaft 60, and the end of the rotation plating plate 330 runs linearly on the revolving chassis 10. At this time, the revolving chassis 10 also shares the structure of the rotatable plating pan 100 The required structural support force will make the male-rotary plating pot structure 100 more stable during operation.

With the above structure, when the revolving top plate 20 rotates, the rotation plating plate 330 will be driven to move. When the auto-rotation plate 330 moves, because of the interaction with the revolution chassis 10, the auto-rotation plate 330 is rotated by the support of the rotating shaft 60.

A plurality of wafer carriers 40, each wafer carrier 40 is used to carry the wafer 420 or object to be vapor deposited, and each wafer carrier 40 is fixed on the auto-rotation plate 330 by a rotating shaft 60. During installation, each wafer carrier 40 can be arranged on the same concentric circle of the autorotation plate 330 in an equidistant arrangement, and by means of an outer ring tooth 410 and an inner ring tooth of each wafer carrier 40 Teeth 322 produce a linear and smooth rotation.

With the above structure, each wafer carrier 40 will be moved when the auto-rotation plate 330 is rotated. When the wafer carrier 40 moves, the outer ring teeth 410 of the wafer carrier 40 will interact with the inner ring teeth 322, so under the support of the rotating shaft 60, the wafer carrier 40 will be linearly rotated.

In this embodiment, three axes are used to revolve and rotate the plating pot, thereby generating more position and angle changes between the wafer 420 and the evaporation source 70, thereby improving the uniformity of evaporation and achieving Good step coverage (Step Coverage) and make the coating structure more consistent.

As shown in FIGS. 7 and 8, the first axis 910 is the axis formed by the center points of the revolution chassis 10 and the revolution top disc 20; and the second axis 920 refers to the rotation axis 60 of the rotation plating plate 330 Centerline; regarding the third axis 930, it is the centerline of the rotating shaft 60 of the wafer carrier 40.

During operation, under the drive of the motor, the autorotation and plating pot structure 100 revolves along the first axis 910. At this time, the autorotation plating plate 330 and the wafer carrier 40 will also revolve along with it; while the autorotation plating plate 33 revolves, The rotation plating plate 33 will also rotate along the second axis 920; when the rotation plating plate 330 rotates, it will also drive the wafer carrier 40 to rotate along the third axis 930.

Since the above-mentioned male and female rotations are performed in a linear manner, the wafer carrier 40 rotates with the rotation of the rotation plating plate 330, which can cause various changes in the angle of the wafer 420 and the evaporation source 70, in addition to improving the wafer The difference in the vapor deposition angle θ between the center and the edge of the sheet 420 improves the uniformity and step coverage of the vapor deposition of the three-dimensional electronic component 421, and can also overcome the shadow of the three-dimensional electronic component 421 due to the three-dimensional pattern structure in a dynamic manner. At the same time, it can increase the uniformity of the coating and make the coating structure more consistent.

When the vapor deposition angle θ is different, the thickness of the coating will make the structure of the coating film different. Therefore, the design of the vapor deposition angle θ degree can be greater than or equal to 70 degrees, and the definition of the vapor deposition angle θ degree refers to the wafer carrier The angle formed by the surface of 40 and an evaporation angle ray 940, and the evaporation angle 940 is a straight line formed by the evaporation source 70 and the edge of one of the wafer carriers 40.

In order to achieve better step coverage, the difference between the maximum vapor deposition angle θ degrees and the minimum vapor deposition angle θ degrees of any wafer carrier 40 can be designed to be greater than or equal to 10 degrees. Regarding the above-mentioned vapor deposition angle θ according to the needs of different products, the first angle adjustment unit 510 or the second angle adjustment unit 520 can be used for fine adjustment.

However, the above embodiments are used to illustrate the characteristics of the present invention, and its purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly, rather than limiting the scope of the patent of this creation, so any other The equivalent modification or modification done by the spirit of disclosure should still be included in the scope of the patent application described below.

B1: Drive shaft P112: Roller P12: First supporting rod P120, P120: Rotating axis P130: Rotating axis P13: Wafer carrier AP131: Shaft P131: Extension rod P14: Carrier plate P15: Rotating body P152: Protruding rod 100 : 3D vaporization of the public rotation plating pot structure 10: revolution chassis 20: revolution top plate 210: support 220: revolution runner 30: plating pot rotation module 310: cantilever 320: gear plate 321: circular opening 322: inner Ring tooth 330: Rotary plating plate 40: Wafer carrier 410: Outer ring tooth 420: Wafer 421: Three-dimensional electronic component 50: Angle adjuster 510: First angle adjustment unit 520: Second angle adjustment unit 60: Rotation axis 70: Vapor deposition source 910: 1st axis 920: 2nd axis 930: 3rd axis 940: Vapor deposition angle θ: Vapor deposition angle X: Reference angle

[Picture 1] is a fixed structure diagram of a conventional self-rotating wafer carrier; [Picture 2] is a diagram of a conventional object carrier device of a vacuum evaporation machine; [Picture 3] is a kind of The embodiment of the present invention is a 3D vapor deposition male rotation plating pot structure of the embodiment of the evaporation machine; [Figure 4] is a 3D vapor deposition male rotation plating pot structure embodiment of the invention; [Figure 5] is the invention A diagram of an embodiment of a plating pan rotation module; [Figure 6] is a diagram of an embodiment of the operation and partial enlargement of an angle adjuster of the present invention; [Figure 7] is the first axis, second axis, and Embodiment diagram of the third axis position; and [Figure 8] is an embodiment diagram of the positional relationship of the three-dimensional electronic components on the wafer carrier plate and the spin plating plate.

100: 3D vapor deposition male rotation plating pot structure

10: Revolving chassis

20: Revolving top plate

210: support

220: revolution runner

30: Rotating module for plating pan

310: cantilever

320: gear plate

321: round opening

322: Internal ring teeth

330: Rotating plated plate

40: Wafer carrier

410: outer ring teeth

420: Wafer

60: shaft

Claims (10)

A 3D vapor deposition male autorotation pan structure, which includes: a revolution bottom plate, which is a circular surrounding track; a revolution top plate, which has a plurality of support members, each of which is supported by a revolution runner at the bottom , Orbiting around the revolving chassis; a plurality of plating pan rotation modules, each of the plating pan rotation modules includes: a cantilever, which is coupled to the revolving top plate at an oblique angle; a gear plate, which is coupled to the cantilever On the bottom side, the gear plate is formed with an inner ring-shaped tooth; and a rotation plating plate, which is coupled to the cantilever by a rotating shaft, and the end of the rotation plating plate is linearly running around the revolution chassis; and a plurality of Each wafer carrier, each wafer carrier is fixed on a self-rotating platen by a rotating shaft, and is generated by an outer ring tooth and an inner ring tooth of each wafer carrier Linear and smooth rotation combined. The structure of the revolution rotation plating pot as described in item 1 of the patent application scope, wherein the cantilever is combined with the revolution top plate by an angle adjuster. The structure of a public rotation plating pot as described in item 2 of the patent application scope, wherein the angle adjuster includes a first angle adjustment unit and a second angle adjustment unit, and the rotation plating plate and the revolution top plate are formed The included angle of 18 degrees is defined as a reference angle. The structure of the public rotation plating pot described in item 3 of the patent application scope, wherein the adjustment angle of the first angle adjustment unit is +3, +1, -1, or -3 degrees of the reference angle. The structure of the public rotation plating pot described in item 3 of the patent application scope, wherein the adjustment angle of the second angle adjustment unit is +2, 0, or -2 degrees of the reference angle. The structure of the public rotation plating pot described in item 1 of the patent application scope, wherein the evaporation angle is greater than or equal to 70 degrees, and the evaporation angle is the angle formed by the surface of the wafer carrier and an evaporation angle ray, and the The vapor deposition angle ray is a straight line formed by the vapor deposition source and the edge of one of the wafer carriers. According to the structure of the public rotation plating pot described in Item 6 of the patent application scope, wherein the difference between the largest vapor deposition angle and the smallest vapor deposition angle is greater than or equal to 10 degrees. The structure of the public rotation plating pot as described in item 1 of the scope of the patent application, wherein the revolving bottom plate and the revolving top plate are arranged parallel to each other and in a horizontal state. The structure of the public rotation plating pot as described in item 1 of the scope of the patent application, wherein the plurality of support members are three support members, and are arranged at equal intervals with each other. The structure of the public rotation plating pot as described in Item 1 of the patent application range, wherein the plurality of plating pot rotation modules are three plating pot rotation modules, and are arranged at equal intervals with each other.

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