TWI664045B - 貼合方法及基板裝置、微流道裝置及其貼合方法 - Google Patents

貼合方法及基板裝置、微流道裝置及其貼合方法 Download PDF

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TWI664045B
TWI664045B TW106137720A TW106137720A TWI664045B TW I664045 B TWI664045 B TW I664045B TW 106137720 A TW106137720 A TW 106137720A TW 106137720 A TW106137720 A TW 106137720A TW I664045 B TWI664045 B TW I664045B
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substrate
substrates
modified
bonding method
contact surface
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TW201918314A (zh
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楊松益
王保權
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綠點高新科技股份有限公司
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Priority to US16/176,348 priority patent/US10940472B2/en
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Abstract

一種貼合方法，包含下列步驟：提供兩個基板，每個基板包括一個接觸面，至少一個基板的接觸面具有一個功能區；使每個基板的接觸面於能量源處理下進行表面改質而轉變為一個改質面；使該等改質面彼此接觸而讓該等基板接合在一起；及以雷射光束照射該等基板於該功能區邊緣的部分，而使該等基板經雷射光照射的部分熔接在一起。本發明貼合方法所製得的基板裝置不易因外力彎折而發生基板分離且能避免水氣侵入。

Description

貼合方法及基板裝置、微流道裝置及其貼合方法
本發明是有關於一種貼合方法及基板裝置，特別是指一種基板表面經改質過的貼合方法及基板裝置。
參閱圖1與圖2，現有一種應用於製備生物檢測用之微流道裝置(microchannel device)的貼合方法包含下列步驟：(a)先提供兩個材料為環烯烴聚合物(cyclo-olefin polymer,COP)的基板11；(b)使每個基板11的其中一面經真空紫外線(vacuum ultraviolet；簡稱VUV)照射進行表面改質後，轉變為改質面111；(c)通過改質面111的彼此接觸並經熱壓步驟後，使兩個基板11接合在一起而得到一個基板裝置1。
步驟(b)中的表面改質，是於原本為疏水性的面上形成多個如醚基、酮基或羧基等親水性官能基，步驟(c)則是通過親水性官能基間所產生的吸引力而使兩個基板11能接合在一起。然而，前 述貼合方法所得到的基板裝置1在經外力彎折後，兩個已接合在一起的基板11仍會發生分離情形；此外，基板裝置1在經長時間使用後，水氣也易從兩個基板11的接合處進入基板裝置1中，導致形成在兩個改質面111上的親水性官能基所產生的吸引力會因接觸到水氣而逐漸消失，最終造成兩個基板11發生分離情形。
因此，如何改良現有應用於製備微流道裝置的貼合方法，使所製得的基板裝置不易因外力彎折而發生基板分離且能避免水氣侵入，成為目前致力研究的目標。
因此，本發明的第一目的，即在提供一種貼合方法。
於是，本發明貼合方法包含下列步驟：提供兩個基板，每個基板包括一個接觸面，至少一個基板的接觸面具有一個功能區；使每個基板的接觸面於能量源處理下進行表面改質而轉變為一個改質面；使該等改質面彼此接觸而讓該等基板接合在一起；及以雷射光束切割該等基板於該功能區邊緣的部分，而使該等基板經雷射光切割的部分熔接在一起而形成一體，且該等基板於該功能區內的部分與該等基板於該功能區外的部分分離。
因此，本發明的第二目的，即在提供一種基板裝置。
於是，本發明基板裝置包含一個下層基板及一個上層基板。
該下層基板，其上表面形成一個具有多個親水性官能基的改質面，該上表面較接近周緣處具有一個帶狀熔接區。
該上層基板，其下表面形成一個具有多個親水性官能基的改質面，該下表面較接近周緣處具有一個帶狀熔接區，且透過該下表面的改質面與該下層基板上表面的改質面彼此接合。
該下層基板的熔接區及該上層基板的熔接區是經由雷射光切割產生熔融而彼此熔接，且該上、下層基板邊緣形成一體並具有雷射切割痕跡。
因此，本發明的第三目的，即在提供一種貼合方法。
於是，本發明貼合方法包含下列步驟：提供兩個基板；以能量源照射各個基板的一個表面至少部分區域，使該區域表面進行表面改質而轉變為一個改質面；使該兩個基板的改質面彼此接觸，以接合該兩個基板；及以雷射光束切割該等基板的部分區域，而使該等基板經雷射光切割的部分熔接在一起而該等基板被切割的邊緣形成一體。
因此，本發明的第四目的，即在提供一種微流道裝置的 貼合方法。
於是，本發明微流道裝置的貼合方法包含下列步驟：提供兩個基板，其分別具有一個接觸面，該兩個基板其中至少一者的接觸面包括至少一個凹槽，作為該微流道裝置的一個流體通道的至少一部分；以能量源照射各個基板的接觸面至少部分區域，使該區域表面進行表面改質而轉變為一個改質面；使該兩個基板的改質面彼此接觸，以接合該兩個基板；及以雷射光束切割該等基板的部分區域，而使該等基板經雷射光切割的部分熔接在一起而該等基板被切割的邊緣形成一體。
因此，本發明的第五目的，即在提供一種微流道裝置。
於是，本發明微流道裝置包含一個第一基板及一個第二基板。
該第一基板具有一個經過表面改質的第一接觸面，該第一接觸面包括至少一個凹槽，作為該微流道裝置的一個流體通道的至少一部分。
該第二基板具有一個經過表面改質的第二接觸面，且該第二接觸面接合於該第一基板的第一接觸面。其中，該第一基板及第二基板中的部分區域是經雷射光切割而相互熔接，且該第一、第二基板邊緣形成一體並具有雷射切割痕跡。
本發明的功效在於：由於本發明貼合方法在該等基板接合在一起後，還需以雷射光束照射該等基板於該功能區邊緣的部分，而使該等基板經雷射光切割的部分會熔接在一起，因此，由本發明貼合方法所得基板裝置的該等基板分別會具有經由雷射光切割產生熔融而彼此熔接的熔接區，進而使該等基板不易因外力彎折而發生分離，且能防止水氣從該等基板的接合處進入裝置中，進而能避免水氣侵入。
S1‧‧‧提供步驟
S2‧‧‧表面改質步驟
S3‧‧‧接合步驟
S4‧‧‧熔接步驟
23‧‧‧基板
231‧‧‧接觸面
232‧‧‧改質面
233‧‧‧功能區
234‧‧‧凹槽
237‧‧‧切割焊道
236‧‧‧熔接區
3‧‧‧基板裝置
331‧‧‧改質面
31,32,33‧‧‧基板
332‧‧‧凹槽
333‧‧‧流體通道
4‧‧‧能量源
5‧‧‧雷射光束
61‧‧‧孔洞
7‧‧‧測試台
62‧‧‧測試棒
本發明的其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中：圖1是一立體分解圖，說明現有貼合方法所製得的基板裝置；圖2是一立體組合圖，說明現有貼合方法所製得的基板裝置；圖3是一步驟流程圖，說明本發明第一實施例的貼合方法的各個步驟；圖4是一俯視示意圖，說明本發明第一實施例的貼合方法的提供步驟S1；圖5是一側視示意圖，說明本發明第一實施例的貼合方法的表面改質步驟S2，其中，能量源是以紫外線為例；圖6是一立體示意圖，說明本發明第一實施例的貼合方法的接合 步驟S3；圖7是一側視示意圖，說明本發明第一實施例的貼合方法的接合步驟S3；圖8是一立體示意圖，說明本發明第一實施例的貼合方法的熔接步驟S4；圖9是一立體示意圖，說明本發明第一實施例的貼合方法的熔接步驟S4；圖10是一立體示意圖，說明本發明第一實施例的貼合方法所製得的基板裝置；圖11是一沿著圖10的線X-X方向進行剖面的剖面示意圖，說明本發明第一實施例的貼合方法所製得的基板裝置；圖12是一立體示意圖，說明本發明第二實施例的貼合方法的提供步驟S1；圖13是一立體示意圖，說明本發明第二實施例的貼合方法的熔接步驟S4；圖14是一立體示意圖，說明本發明第二實施例的貼合方法的熔接步驟S4；圖15是一沿著圖10的線X-X方向進行剖面的剖面示意圖，說明本發明第二實施例的貼合方法所製得的基板裝置；圖16是一俯視示意圖，說明本發明第三實施例的貼合方法的提 供步驟S1；圖17是一沿著圖10的線X-X方向進行剖面的剖面示意圖，說明本發明第三實施例的貼合方法所製得的基板裝置；及圖18是一立體示意圖，說明推力測試的測試方法。
在本發明被詳細描述前，應當注意在以下的說明內容中，類似的元件是以相同的編號來表示。
<第一實施例>
本發明貼合方法的第一實施例用於製備一個基板裝置。該基板裝置為生物檢測用的微流道裝置。參閱圖3，本發明第一實施例的貼合方法包含下列步驟：一個提供步驟S1、一個表面改質步驟S2、一個接合步驟S3及一個熔接步驟S4。
參閱圖4，提供步驟S1為提供兩個材料皆為疏水性聚合物的基板23，每個基板23包括一個接觸面231。其中一個基板23的接觸面231具有一個功能區233，及一個位於功能區233內且作為氣體或生物液體等流體通道[即微流道(microchannel)]的凹槽234，功能區233的範圍涵蓋整個接觸面231(即，功能區233的面積會等於接觸面231的面積)。
需特別說明的是，在本第一實施例中，凹槽234的數量 並無特別限制，基板23也可以包括兩個以上的凹槽234。此外，疏水性聚合物例如但不限於是聚甲基丙烯酸甲酯(polymethylmethacrylate,PMMA)、聚碳酸酯(polycarbonate,PC)、聚苯乙烯(polystyrene,PS)、環烯烴聚合物(COP)、聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)或前述的組合。
參閱圖5，表面改質步驟S2為使每個基板23的接觸面231進行表面改質。表面改質方法為使原本屬於疏水性的接觸面231於能量源4處理下，使接觸面231上產生多個親水性官能基(如酮基、醚基或羧基等)而轉變為一個屬於親水性的改質面232(見圖6)。
需特別說明的是，在本第一實施例中，能量源4為紫外線或電漿。紫外線例如但不限於是真空紫外線(VUV，波長範圍為100~200nm)、中紫外線(MUV，波長範圍為200~300nm)或近紫外線(NUV，波長範圍為300~400nm)。電漿例如但不限於是氧氣電漿，且接觸面231經能量源4處理的時間範圍為25~185秒。此外，更具體說明的是，當以紫外線作為能量源4時，使接觸面231於能量源4處理下進行表面改質的方法是以紫外線直接照射接觸面231而進行表面改質；當以氧氣電漿作為能量源4時，使接觸面231於能量源4處理下進行表面改質的方法是於接觸面231所處的環境中通入氧氣並同時施加高頻電磁波，而環境中的氧氣會因與電子撞擊而變成氧氣電漿，接觸面231即會暴露於氧氣電漿下而進行表面 改質。
參閱圖6，接合步驟S3為先使兩個基板23的改質面232彼此接觸，參閱圖7，接著再進行熱壓，使兩個基板23會因改質面232上的親水性官能基間所產生的吸引力而接合在一起。
需特別說明的是，在本第一實施例中，熱壓的溫度範圍為80~130℃，熱壓的壓力範圍為20~35kg/cm2，熱壓的時間範圍為2~4分鐘。
參閱圖8，熔接步驟S4為以雷射光束5照射兩個基板23於功能區233邊緣的部分，而使兩個基板23經雷射光束5照射的部分熔接在一起後，製得基板裝置3(即微流道裝置，見圖10)。在本第一實施例中，由於功能區233的面積等於改質面232(相當於提供步驟S1中的接觸面231)的面積，因此雷射光束5是沿著兩個基板23的邊緣進行照射，並分別在兩個基板23的周緣處形成一個矩形封閉的帶狀熔接區236，而使兩個基板23的邊緣部分熔接在一起。此外，本實施例中雷射光束5是實際照射於兩個基板23側邊最外緣略往內退縮一距離處，但於其他實施例中，亦可進一步令雷射光束5往外照射到兩個基板23側邊最外緣處，而都包含於本發明態樣中。
參閱圖9，針對熔接步驟S4更詳細說明的是，雷射光束5的焦距是設定在兩個基板23接合處的下層基板23的上表面，雷射光束5於通過上層基板23而照射到下層基板23上表面後，下層基板 23於雷射光束5照射且位於兩個基板23之接合處的部分(即圖9中的虛線圓圈部分)會先將雷射光的能量轉換為熱能而熔融，且熱能會由下層基板23經過兩個基板23的接合處傳導至上層基板23，而使上層基板23對應於該接合處的下表面也產生熔融，藉此使兩個基板23在經雷射光束5照射且位於接合處的部分(相當於圖8的熔接區236部分)發生熔融及重組，並於兩個基板23冷卻後，其經雷射光束5照射且位於接合處的部分即會熔接在一起。
需特別說明的是，較佳地，本實施例中，雷射光束5的種類為紅外線雷射，波長為1064μm，雷射光束5的功率範圍為10~50W。
針對步驟S1至S3更具體說明的是，步驟S2中所使用的能量源與處理時間，及步驟S3中進行熱壓的條件(溫度、時間、壓力)均可依照基板23的材料進行調整，以達到更佳接合效果。下表1整理不同的基板材料，其較佳的能量源、處理時間及熱壓條件。
參閱圖10與11，為由本第一實施例的貼合方法所製得的基板裝置3(即微流道裝置)。基板裝置3主要包含上下兩層材料為疏水性聚合物的基板33。
每個基板33包括一個與另一個基板33接觸且具有多個親水性官能基的改質面331。其中一個基板33的改質面331具有一個作為氣體或生物液體等流體通道(即微流道)的凹槽332。兩個基板33是通過改質面331彼此接觸並藉由親水性官能基間所產生的吸引力而接合在一起。需特別說明的是，在本第一實施例中，凹槽332的數量並無特別限制，基板33的改質面331也可以包括兩個以上的凹槽332。再者，下層基板33上表面較接近周緣處及對應的上層基板33下表面較接近周緣處各具有一個帶狀熔接區236，下層基板33的熔接區236及上層基板33的熔接區236是經由雷射光照射產生熔融而彼此熔接。
由於帶狀熔接區236環繞兩個基板33的改質面331，即兩個基板33的接合處同樣也會被熔接區236所環繞及封閉，因此水氣並無法從兩個基板33的接合處直接進入裝置中，所以本第一實施例所製得的基板裝置3能避免水氣侵入；此外，由於透過帶狀熔接 區236將兩個基板33周緣進一步熔接為一體，所以本第一實施例所製得的基板裝置3在受到外力彎折時，兩個基板33不易分離。
<第二實施例>
本發明貼合方法的第二實施例與第一實施例類似，其差別在於，參閱圖12，本第二實施例的貼合方法在提供步驟S1中，功能區233僅涵蓋部分接觸面231(即，功能區233的面積會小於接觸面231的面積)，例如圖12於虛線內的範圍即為功能區233的範圍；此外，參閱圖13，在熔接步驟S4中，由於功能區233的面積小於改質面232(即提供步驟S1中的接觸面231)的面積，因此雷射光束5是沿著圖12中的虛線(即功能區邊緣)照射兩個基板23。而本第二實施例的雷射光束5，除了會使兩個基板23於功能區233邊緣的部分發生熔接外，同時也會對兩個基板23於功能區233邊緣的部分進行雷射切割，所以在經雷射光束5照射後，兩個基板23於功能區233內的部分會與兩個基板23於功能區233外的部分分離，而兩個基板23於功能區233內的部分即為基板裝置3(見圖10)。
參閱圖14，針對熔接步驟S4更詳細說明的是，雷射光束5會對兩個基板23進行雷射切割，而產生一個切割焊道237，因而兩個基板23於功能區233內的部分會與兩個基板23於功能區233外的部分分離(見圖13)，同時，位於切割焊道237兩側且位於兩個基板23接合處的部分會發生熔融及重組，並於冷卻後，其位於切割焊 道237兩側且位於兩個基板23接合處的部分即會熔接在一起。
需特別說明的是，在本第二實施例中，雷射光束5的波長是依據基板23的厚度進行調整，當基板23越厚，所需雷射光束5的功率需越高。較佳地，本實施例中，雷射光束5的種類為二氧化碳雷射，波長範圍為9.4~10.6μm，雷射光束5的功率範圍為10~100W。
參閱圖15，由本第二實施例的貼合方法所製得的基板裝置3會與由第一實施例的貼合方法所製得的基板裝置大致相同，主要差異為兩個基板33最側邊外緣交界處不存在圖11所示之交界線，而皆由雷射光束5所熔接為一體。
<第三實施例>
本發明貼合方法的第三實施例與第一實施例類似，其差別在於，參閱圖16，本第三實施例的貼合方法在提供步驟S1中，每個基板23的接觸面231包括一個凹槽234，並在接合步驟S3中，於兩個基板23接合後，兩個凹槽234會共同界定出一個流體通道(即微流道)。
需特別說明的是，在本第三實施例中，每個基板23的凹槽234的數量並無特別限制，每個基板23也可以包括兩個以上的凹槽234，且於兩個基板23接合後，所有凹槽234會共同界定出二個以上的流體通道235；此外，位於不同基板23的凹槽234，其形狀 及位置也可以不互相對應，於此情況下，位於每個基板23且不互相對應的凹槽234各自作為流體通道235。
參閱圖17，由本第三實施例的貼合方法所製得的基板裝置3，與第一實施例的基板裝置相似，其差別在於，本第三實施例的基板裝置3中，每個基板33的改質面331具有一個彼此形狀及位置相對應的凹槽332，兩個凹槽332共同界定出一個流體通道333。
特別再說明的是，本發明貼合方法並不只限於應用在製備生物檢測裝置(如微流道裝置)，也可應用在製備如光電等其它領域的基板裝置。
<比較例>
比較例的貼合方法與第一實施例類似，其差別在於，比較例的貼合方法不包含熔接步驟S4。
<基板裝置的老化測試>
測試方法
A.超音波老化測試：
[比較例]
參閱圖18，將一個15mm×15mm且材料為PMMA的基板31(經VUV表面改質)與另一個15mm×25mm且材料為PMMA並具有一個直徑為2mm孔洞61的基板32(經VUV表面改質)，先利用比較例的貼合方法(不包含熔接步驟S4)製得一個基板裝置3。將 所得基板裝置3利用超音波震盪器於25℃下進行超音波震盪60分鐘後，再將其置於測試台7上，並利用一個直徑為0.15mm的測試棒62通過孔洞61對基板31施加推力(速度為每次下壓0.01mm)，並記錄兩個基板31,32開始分離時所施加的推力(gf)。
[實施例]
參閱圖18，將一個15mm×15mm且材料為PMMA的基板31(經VUV表面改質)與另一個15mm×25mm且材料為PMMA並具有一個直徑為2mm孔洞61的基板32(經VUV表面改質)，先利用第一實施例的貼合方法(包含熔接步驟S4)製得一個基板裝置3，將所得基板裝置3利用超音波震盪器於25℃下進行超音波震盪60分鐘後，再將其置於測試台7上，並利用一個直徑為0.15mm的測試棒62通過孔洞61對基板31施加推力(速度為每次下壓0.01mm)，並記錄兩個基板31,32開始分離時所施加的推力(gf)。
前述經超音波老化測試方法前後的基板裝置3所測得推力測試的結果整理於下表2中。
B.水煮老化測試：
與超音波老化測試方法類似，將經由第一實施例與比較例的貼合方法所得的基板裝置3分別水煮30分鐘(溫度為98℃)後，靜置12小時，接著進行推力測試。
前述經水煮老化測試方法前後的基板裝置3所測得推力 測試的結果整理於下表2中。
結果與討論
先說明的是，當使基板裝置中的兩個基板開始分離時所施加的推力越高，表示基板裝置的抗彎折強度也就越高。
由表2結果可知，不論是於老化前或是經超音波震動或水煮後，第一實施例的推力(即抗彎折強度)皆為比較例的三倍以上，特別是在經超音波震動或水煮後，第一實施例的推力更是比較例的七倍以上。由前述說明可知，相較於未經熔接步驟S4的比較例，有經熔接步驟S4的第一實施例確實能大幅提升所製得基板裝置的抗彎折強度，因而能使基板裝置不易因外力彎折而發生基板分離；此外，第一實施例的基板裝置於水煮後，依舊能維持高抗彎折強度，說明有經熔接步驟S4的第一實施例，其所製得的基板裝置確實能避免水氣從兩個基板的接合處進入裝置中，因而能避免水氣侵入。
綜上所述，本發明貼合方法於兩個基板接合在一起後，還需以雷射光束照射兩個基板於該功能區邊緣的部分，而使兩個基 板經雷射光照射的部分會熔接在一起，因此，由本發明貼合方法所得基板裝置的兩個基板分別會具有經由雷射照射產生熔融而彼此熔接的熔接區，進而能使兩個基板不易因外力彎折而發生分離，且能防止水氣從兩個基板的接合處進入裝置中，進而能避免水氣侵入，故確實能達成本發明的目的。
惟以上所述者，僅為本發明的實施例而已，當不能以此限定本發明實施的範圍，凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾，皆仍屬本發明專利涵蓋的範圍內。

Claims (10)

  1. 一種貼合方法，包含下列步驟：提供兩個基板，每個基板包括一個接觸面，至少一個基板的接觸面具有一個功能區；使每個基板的接觸面於能量源處理下進行表面改質而轉變為一個改質面；使該等改質面彼此接觸而讓該等基板接合在一起；及以雷射光束切割該等基板於該功能區邊緣的部分，而使該等基板經雷射光切割的部分熔接在一起而形成一體，且該等基板於該功能區內的部分與該等基板於該功能區外的部分分離。
  2. 如請求項1所述的貼合方法，其中，該兩個基板其中至少一者的接觸面包括至少一個凹槽，而於該等基板接合後作為一個流體通道的至少一部分。
  3. 如請求項1所述的貼合方法，其中，該能量源為紫外線或電漿。
  4. 如請求項1所述的貼合方法，其中，每個基板的材料為疏水性聚合物。
  5. 一種基板裝置，包含：一個下層基板，其上表面形成一個具有多個親水性官能基的改質面，該上表面較接近周緣處具有一個帶狀熔接區；及一個上層基板，其下表面形成一個具有多個親水性官能基的改質面，該下表面較接近周緣處具有一個帶狀熔接區，且透過該下表面的改質面與該下層基板上表面的改質面彼此接合，其中，該下層基板的熔接區及該上層基板的熔接區是經由雷射光切割產生熔融而彼此熔接，且該上、下層基板邊緣形成一體並具有雷射切割痕跡。
  6. 如請求項5所述的基板裝置，其中，該下層基板及該上層基板其中至少一者的改質面具有一個凹槽，以供作為一個流體通道的至少一部分。
  7. 如請求項5所述的基板裝置，其中，該下層基板及該上層基板的材料為疏水性聚合物。
  8. 一種貼合方法，包含下列步驟：提供兩個基板；以能量源照射各個基板的一個表面至少部分區域，使該區域表面進行表面改質而轉變為一個改質面；使該兩個基板的改質面彼此接觸，以接合該兩個基板；及以雷射光束切割該等基板的部分區域，而使該等基板經雷射光切割的部分熔接在一起而該等基板被切割的邊緣形成一體。
  9. 一種微流道裝置的貼合方法，包含下列步驟：提供兩個基板，其分別具有一個接觸面，該兩個基板其中至少一者的接觸面包括至少一個凹槽，作為該微流道裝置的一個流體通道的至少一部分；以能量源照射各個基板的接觸面至少部分區域，使該區域表面進行表面改質而轉變為一個改質面；使該兩個基板的改質面彼此接觸，以接合該兩個基板；及以雷射光束切割該等基板的部分區域，而使該等基板經雷射光切割的部分熔接在一起而該等基板被切割的邊緣形成一體。
  10. 一種微流道裝置，包含：一個第一基板，具有一個經過表面改質的第一接觸面，該第一接觸面包括至少一個凹槽，作為該微流道裝置的一個流體通道的至少一部分；及一個第二基板，具有一個經過表面改質的第二接觸面，且該第二接觸面接合於該第一基板的第一接觸面，其中，該第一基板及第二基板中的部分區域是經雷射光切割而相互熔接，且該第一、第二基板邊緣形成一體並具有雷射切割痕跡。
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