TWI662864B - 電漿處理腔室、基板支撐物及其製造方法 - Google Patents
電漿處理腔室、基板支撐物及其製造方法 Download PDFInfo
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Abstract
藉由使用套管在孔隙之內側覆蓋導電表面，可以消除電漿處理腔室之構件中之孔隙中之寄生電漿。在腔室構件中(例如：上電極或基板支撐物)之孔隙可以是氣孔、上升銷孔、氦通道、導管、和/或充氣部。
Description
本發明係關於電漿處理腔室中之寄生電漿的防止。
隨著各相繼之半導體技術世代，晶圓直徑有增加之傾向而電晶體尺寸則減少，導致基板處理中需要更高之準確度與可重複性。在真空腔室中慣常地使用電漿來處理半導體基板材料(例如：矽晶圓)。電漿處理技術包含濺鍍沉積(sputter deposition)、電漿輔助化學氣相沉積(plasma-enhanced chemical vapor deposition,PECVD)、光阻剝除(resist strip)、與電漿蝕刻(plasma etch)。
在電漿處理腔室中，在處理之基板附近之製程氣體被激發為電漿。然而，在電漿處理腔室中之其他位置(例如：氣孔、導管、上升銷孔、充氣部、或其類似物)之氣體，在某些條件下也可能被激發為多餘的電漿。這類多餘的電漿稱之為寄生電漿。因為很多原因，寄生電漿會出現在電漿處理腔室中，例如：腔室構件之幾何形狀、電漿處理配方所使用之氣體壓力與氣體化學、射頻(RF)電源之供應等等。寄生電漿在電漿處理過程中會造成各種問題，例如：粒子污染、處理期間之空間與時間之不一致、和/或腔室構件之過早失效。因此減少電漿處理腔室中之寄生電漿為必要的。
在此說明電漿處理腔室之構件，包含：一非金屬材料之第一分層，該第一分層具有第一與第二相對表面，第一表面暴露在電漿處理腔室中之電漿，而第二表面未暴露在電漿處理腔室中之電漿；一導電性材料之第二分層，該第二分層結合至第一分層之第二表面；一孔隙空間，延伸通過整個第一與第二分層；一管狀套管，排列於第二分層中之孔隙空間之內表面，如此第二分層就不會暴露在孔隙空間中，並且可防止孔隙空間中之寄生電漿；其中管狀套管之一端與第一分層和第二分層之接觸面共平面，而管狀套管之另一端與第二分層之下表面共平面。
在此說明用來消除寄生電漿之電漿處理腔室之構件與方法。此方法與構件不限制於特定類型之電漿處理腔室或特定電漿處理技術。電漿處理腔室可以依賴各種機構以產生電漿，例如：電感耦合(變壓器耦合)、螺旋、電子迴旋共振、電容耦合(平行板)。舉例來說，在變壓器耦合式電漿(TCPTM)處理腔室中或在電子迴旋共振(ECR)處理腔室中，可以產生高密度電漿。可自Lam Research Corporation,Fremont,Calif.購得變壓器耦合式電漿處理腔室，其中射頻能量被電感耦合到腔室中。共同擁有之美國專利第5,948,704號揭示可提供高密度電漿之高流量電漿處理腔室之範例，其公開內容在此引用以作為參考。共同擁有之美國專利第4,340,462；4,948,458；5,200,232；及5,820,723號揭示平行板電漿處理腔室、電子迴旋共振(ECR)電漿處理腔室、及變壓器耦合式電漿(TCPTM)處理腔室，其公開內容在此引用以作為參考。
舉例來說，在平行板電漿處理腔室中(例如：共同擁有之美國專利第6,090,304號所描述之雙頻電漿蝕刻腔室，其公開內容在此引用以作為參考)可以產生電漿。包含上噴淋頭電極與基板支撐物之雙頻電容耦合式電漿處理腔室為較佳的平行板電漿處理腔室。為了闡明，將參考平行板形式之電漿處理腔室來說明在此之實施例。
圖1闡明用於電漿蝕刻之平行板電漿處理腔室。電漿處理腔室100包含腔室110、入口負載閘112、及非必需的出口負載閘114，共同擁有之美國專利第6,824,627號說明更多細節，其公開內容在此全部引用以作為參考。
負載閘112與114(如果具備)包含傳送裝置，以將基板(例如：晶圓)從晶圓供應器162傳送通過腔室110、再離開到晶圓貯藏器164。負載閘幫浦176可以在負載閘112與114中提供所需之真空壓力。
真空幫浦172(例如：渦輪泵)適合用來維持腔室110中之所需壓力。在電漿蝕刻期間，控制腔室壓力，並最好保持在足以維持電漿之水準。太高之腔室壓力會不利地促使蝕刻停止，而太低之腔室壓力會導致電漿消滅。在一個中密度電漿處理腔室中(例如：平行板電漿處理腔室)，腔室壓力維持在低於約200 mTorr之壓力為較佳的(例如：低於100 mTorr，如20到50 mTorr)(在此的「約」代表±10%)。
真空幫浦172會連接到腔室110之壁上之出口，並且可以藉由閥173來調節，以控制腔室中之壓力。更好地，當蝕刻氣體流入腔室110時，真空幫浦能將腔室110中之壓力維持在少於200 mTorr。
腔室110包含含有上電極125(例如：噴淋頭電極)之上電極組件120、及基板支撐物150。上電極組件120架置在上外殼130中。藉由機構132可以垂直地移動上外殼130，以調整上電極125與基板支撐物150之間之間隔。
製程氣體源170可以連接到外殼130，以將包含一或多種氣體之製程氣體傳送到上電極組件120。在更好的電漿處理腔室中，上電極組件包含氣體分配系統，用來將製程氣體傳送到鄰近基板之表面之區域。共同擁有之美國專利第6,333,272；6,230,651；6,013,155；及5,824,605號揭示可包含一或多個導氣環、噴嘴、和/或噴淋頭(例如：噴淋頭電極)之氣體分配系統，其公開內容在此引用以作為參考。
上電極125最好包含噴淋頭電極(含有用來分配製程氣體通過之氣孔(未顯示))。氣孔可以具有0.02到0.2英吋之直徑。噴淋頭電極可以包含一或多個垂直地分隔開之隔板，能促進所需之製程氣體之分配。上電極與基板支撐物可以由任何合適的材料所組成，例如：石墨、矽、碳化矽、鋁(例如：陽極極化之鋁)、或其混合物。熱傳送液體源174可以連接到上電極組件120，而另一熱傳送液體源可以連接到基板支撐物150。
基板支撐物150可以有一或多個內嵌夾持電極，用來靜電地夾持基板於基板支撐物150之上表面155(支撐表面)上。藉由射頻源(RF source)與伴隨之電路系統(未顯示)(例如：RF匹配電路系統)可以供電給基板支撐物150。基板支撐物150最好為溫度控制的，並且可選擇性地包含加熱裝置(未顯示)。共同擁有之美國專利第6,847,014與7,161,121號揭示加熱裝置之範例，在此引用以作為參考。基板支撐物150可以在支撐表面155上支撐半導體基板(例如：平面面板、或200mm或300mm之晶圓)。
基板支撐物150最好包含通道於其中，用來在支撐表面155上所支撐之基板下方供給熱傳送氣體(例如：氦)，以在其電漿處理期間控制基板溫度。舉例來說，氦氣背側冷卻作用可以將晶圓保持在足夠低的溫度以防止基板上之光阻之燃燒。共同擁有之美國專利第6,140,612號揭示藉由將加壓氣體導引到基板與基板支撐物表面之間之空間來控制基板之溫度之方法，其公開內容在此引用以作為參考。
基板支撐物150可以包含上升銷孔(未顯示)，透過上升銷孔，上升銷可藉由合適之機構而垂直地作用，並將基板舉起而離開支撐表面155，以運輸基板進或出腔室110。上升銷孔可以具有約0.08英吋之直徑。共同擁有之美國專利第5,885,423與5,796,066號揭示上升銷孔之詳細說明，其公開內容在此引用以作為參考。
上電極125與基板支撐物150中之孔隙空間(例如：氣孔、氦通道、上升銷孔)會容易有寄生電漿。舉例來說，在特定條件下(例如：氣體壓力、RF負載、RF頻率等等)，如果孔隙空間延伸橫跨在RF頻率下具有不同相對介電常數之材料之多個層別，在該等層別之間會出現過量的RF電壓。這樣過量的RF電壓(例如：20V以上)足夠在孔隙空間中造成寄生電漿。普遍使用在上電極125與基板支撐物150中之導電性材料可以包含鋁、鋼、石墨、與摻雜矽。當RF電源供應至處理腔室100以在其中產生電漿時，孔隙空間(例如：氣孔)之暴露的導電內表面可以集中電場並在它們鄰近處增強寄生電漿。藉由Paschen方程式來得出在平行板中之氣體之DC崩潰電壓VB(作為壓力p與間隔距離d之函數)。Paschen方程式：
其中A和B為藉由氣體之特性(例如：溫度、氣體成份和游離電位)所決定之常數，而γ為與平行板之材料相關之參數。AC崩潰電壓可以小至VB的十分之一，尤其是在暴露到氣體與集中電場之導電表面之附近地區。
圖2係橫剖面圖，顯示在電漿處理腔室之構件200(例如：上電極或基板支撐物)中之孔隙空間210。構件200包含非金屬材料(例如：陶瓷或無摻雜矽)之分層220、與導電性材料(例如：鋁)之分層230。分層220具有暴露到電漿處理腔室中之電漿260之表面220a，與未暴露到電漿260之表面220b。使用合適的技術(例如：使用如矽膠之黏著劑)，可以將分層230結合到表面220b。各孔隙空間210延伸通過整個分層220與整個分層230，並對電漿處理腔室之內部開放。分層220之厚度與分層230之厚度最好個別為從0.5到5mm。孔隙空間210之直徑可以為約0.02到約0.08英吋。分層220，舉例來說，可以由氧化鋁、氮化鋁、無摻雜矽、氮化矽、氧化矽、氮氧化矽、和/或氧化釔所組成。分層230，舉例來說，可以由金屬、石墨、和/或摻雜矽所組成。分層230具有暴露在孔隙空間210之內側之導電表面235。在孔隙空間210之內側會出現寄生電漿250，而造成其內之侵蝕與腐蝕。構件200可以附接(例如：結合、支撐、固定、和/或黏附)到基底290。藉由將液體流經基底內之內嵌流體通道290a，舉例來說，基底可以為溫度控制的。基底也可以具有至少一充氣部290b與孔隙空間210成流體連通。可以將RF電源供應到基底290以產生電漿260。分層220可以具有內嵌於其中之至少一靜電夾盤(ESC)電極220c。最好至少有一加熱器240(例如：薄膜加熱器)與分層230熱接觸(例如：附接到分層230之下表面或內嵌於分層230)。更好地，在無線射頻下呈現於電漿處理腔室中之分層230之導電性材料之相對介電常數，大於在無線射頻下之分層220之非金屬材料之相對介電常數至少20倍。在這個範例中，其中30 Torr之氦氣填滿孔隙空間210；分層220之厚度大概為0.1英吋；分層230藉著厚度大概為0.03英吋之黏著層而結合到分層220；構件承受27MHz、2500W之RF功率；及電漿260具有大概60Ω之阻抗，大概15.5V之RF電位會在分層230與表面220a之間成長，其會超過在孔隙空間210中之氦氣之崩潰電壓並在其內造成寄生電漿250。
在一實施例中，如圖3所顯示，管狀套管300排列在孔隙空間210之內表面。套管300最好由介電常數低於分層230之介電常數之材料所組成，例如：塑膠(例如：聚二醚酮)或陶瓷(例如：氧化鋁)。更好地，在分層220中之孔隙空間210之部分具有與通過套管300之通道一樣之橫剖面形狀(例如：圓形、多邊形、或其他合適形狀)。孔隙空間210可為圓筒或棱柱形狀。具體來說，如果孔隙空間210為圓筒形狀，管狀套管300具有與分層220中之孔隙空間210之內徑相等之內徑。套管300之徑向厚度必須足夠以抑制在孔隙空間210中之寄生電漿，最好為至少0.01英吋。更好地，套管300由與分層220相同之材料所組成，並且不直接暴露到電漿260。套管300最好有一端與分層230之上表面共平面，而套管300之另一端最好與分層230之下表面共平面，如此分層230之導電表面235才能整個被套管300覆蓋(即沒有導電表面暴露在孔隙空間210中)。更好地，套管300沒有延伸至基底290中。
套管300可以為獨立的套管，藉由任何合適之方法(例如：黏著、壓合、或其類似方法)固定到構件200上。然而，套管300在其外表面上可以具有與層疊物200中之螺紋相匹配之螺紋。套管300也可以為塗膜之形式，藉由任何合適塗膜方法而塗覆在孔隙空間210之內表面上。舉例來說，CVD與電漿噴塗。
在另一實施例中，如圖4所顯示，管狀套管400除了具有上凸緣410外，套管400與套管300皆相同。凸緣410最好具有與分層230之上表面共平面之上表面。在將分層220結合到分層230之前，可以將套管400固定在孔隙空間210中。
圖5顯示另一實施例。管狀套管500除了具有下凸緣510外，套管500與套管300皆相同。在這個情況下，凸緣具有與分層230之下表面共平面之下表面。在將基底290與分層230接合之前，套管500可以固定在孔隙空間210中。
在此描述之套管，也可以使用在電漿處理腔室中容易有寄生電漿之凹穴、孔洞、導管、孔隙、充氣部、和/或其他空間。套管可以作成符合這些空間之內導電表面之形狀。舉例來說，基板支撐物150在上升銷孔和/或氦通道中可以具有套管。
儘管已參照特定實施例來詳細說明用來減少寄生電漿之套管與其內具有套管之電漿暴露層板，熟悉本技藝者將明瞭，在不離開隨附之申請專利範圍內，可進行各種變化與修改，並可使用等效物。
100．．．電漿處理腔室
110．．．腔室
112．．．入口負載閘
114．．．出口負載閘
120．．．上電極組件
125．．．上電極
130．．．外殼
132．．．機構
150．．．基板支撐物
155．．．基板支撐物之上表面(支撐表面)
162．．．晶圓供應器
164．．．晶圓貯藏器
170．．．製程氣體源
172．．．真空幫浦
173．．．閥
174．．．熱傳送液體源
176．．．負載閘幫浦
200．．．構件
210．．．孔隙空間
220、230．．．分層
220a、220b．．．表面
220c．．．靜電夾盤電極
235．．．導電表面
240．．．加熱器
250．．．寄生電漿
260．．．電漿
290．．．基底
290a．．．內嵌流體通道
290b．．．充氣部
300、400、500．．．套管
410、510．．．凸緣
圖1係顯示一示範性電漿處理腔室之略圖。
圖2係橫剖面圖，顯示電漿處理腔室之構件，該構件具有孔隙空間。
圖3係橫剖面圖，顯示根據第一實施例之電漿處理腔室之構件，該構件具有孔隙空間且有一套管排列於其內表面。
圖4係橫剖面圖，顯示根據第二實施例之電漿處理腔室之構件，該構件具有孔隙空間且有一套管排列於其內表面。
圖5係橫剖面圖，顯示根據第三實施例之電漿處理腔室之構件，該構件具有孔隙空間且有一套管排列於其內表面。
Claims (15)
- 一種電漿處理腔室之基板支撐物，包含：一非金屬材料之第一分層，該第一分層具有上與下表面，該上表面用以在該電漿處理腔室中於基板處理期間將一基板支撐於其上；一導電性材料之第二分層，該第二分層結合至該第一分層之該下表面；一孔隙空間，延伸通過整個該第一分層與該第二分層，並對該電漿處理腔室之內部開放，且在該孔隙空間中可防止寄生電漿；一管狀套管，設置在該第二分層中之該孔隙空間之內，如此該第二分層不會暴露在該孔隙空間中；其中該管狀套管之一端與該第一分層和該第二分層之接觸面共平面，而該管狀套管之另一端與該第二分層之下表面共平面，且該管狀套管具有暴露的內表面，該內表面之內徑等於該第一分層中之該孔隙空間之內徑，其中該管狀套管具有向外延伸之上凸緣或向外延伸之下凸緣，其容納在該第二分層中之相配凹部中；其中至少一靜電夾盤電極係內嵌於該第一分層中；其中該第二分層具有從0.5到5mm之厚度，且至少一薄膜加熱器係附接於該第二分層之下表面；及一基底，附接於該第二分層之下表面，其中該基底包含內嵌流體通道，且配置成在該基板支撐物裝設於該電漿處理腔室中時，於處理基板期間受RF電力供應。
- 如申請專利範圍第1項之電漿處理腔室之基板支撐物，其中該管狀套管由與該第一分層相同之材料所組成；該管狀套管由介電常數低於該第二分層之介電常數之材料所組成；或該管狀套管由塑膠或陶瓷所組成。
- 如申請專利範圍第1項之電漿處理腔室之基板支撐物，其中藉由黏著劑、固定器、和/或在該管狀套管之外表面上之螺紋，使該管狀套管固定在該孔隙空間之內部表面上。
- 如申請專利範圍第1項之電漿處理腔室之基板支撐物，其中該第一分層由氧化鋁、氮化鋁、無摻雜矽、氮化矽、氧化矽、氮氧化矽、和/或氧化釔所組成；而其中該第二分層由金屬、石墨、和/或摻雜矽所組成。
- 如申請專利範圍第1項之電漿處理腔室之基板支撐物，其中該管狀套管具有至少0.01英吋之壁厚度。
- 如申請專利範圍第1項之電漿處理腔室之基板支撐物，其中在無線射頻下呈現於該電漿處理腔室中之該導電性材料之相對介電常數，為在該無線射頻下之該非金屬材料之相對介電常數之至少20倍。
- 如申請專利範圍第1項之電漿處理腔室之基板支撐物，其中該孔隙空間為氣孔、上升銷孔、氦通道、導管、和/或充氣部。
- 如申請專利範圍第1項之電漿處理腔室之基板支撐物，其中該第二分層藉由黏著劑而結合到該第一分層的該下表面。
- 如申請專利範圍第1項之電漿處理腔室之基板支撐物，其中該孔隙空間之該內徑為從0.02到0.08英寸。
- 如申請專利範圍第1項之電漿處理腔室之基板支撐物，其中該基底具有與該孔隙空間流體相通之至少一充氣部。
- 如申請專利範圍第10項之電漿處理腔室之基板支撐物，其中該基底結合、支撐、固定、和/或黏附到該第二分層。
- 一種電漿處理腔室之基板支撐物，包含：一非金屬材料之第一分層，該第一分層具有上與下表面，該上表面用以在該電漿處理腔室中於基板處理期間將一基板支撐於其上；一導電性材料之第二分層，該第二分層結合至該第一分層之該下表面；一孔隙空間，延伸通過整個該第一分層與該第二分層，並對該電漿處理腔室之內部開放，且在該孔隙空間中可防止寄生電漿；一管狀套管，設置在該第二分層中之該孔隙空間之內，如此該第二分層不會暴露在該孔隙空間中；其中該管狀套管之一端與該第一分層和該第二分層之接觸面共平面，而該管狀套管之另一端與該第二分層之下表面共平面，且該管狀套管具有暴露的內表面，該內表面之內徑等於該第一分層中之該孔隙空間之內徑；其中至少一靜電夾盤電極係內嵌於該第一分層中；其中該第二分層具有附接於該第二分層之下表面的至少一薄膜加熱器，且其中該管狀套管具有向外延伸之上凸緣或向外延伸之下凸緣，其容納在該第二分層中之相配凹部中；及一基底，附接於該第二分層之下表面，其中該基底包含內嵌流體通道，且配置成在該基板支撐物裝設於該電漿處理腔室中時，於處理基板期間受RF電力供應，其中該管狀套管的該另一端不延伸到該基底中。
- 一種電漿處理腔室，包含：一腔室，包含一上電極組件及如申請專利範圍第1項所述之基板支撐物，該上電極組件包含一上電極；一真空幫浦，設置於該腔室內；及一入口負載閘。
- 一種如申請專利範圍第1項所述之基板支撐物之製造方法，包含：用該管狀套管排列於該第二分層中之該孔隙空間之內部表面，如此該第二分層就不會暴露在該孔隙空間中，並可防止該孔隙空間中之寄生電漿；及使該第二分層與該第一分層之下表面結合。
- 如申請專利範圍第14項之製造方法，更包含將該基底附接到該第二分層。
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| US9184028B2 (en) | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
| US8869742B2 (en) * | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
| JP6527524B2 (ja) * | 2014-02-07 | 2019-06-05 | インテグリス・インコーポレーテッド | 静電チャックおよびその作製方法 |
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| US9793096B2 (en) | 2014-09-12 | 2017-10-17 | Lam Research Corporation | Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity |
| KR102477302B1 (ko) | 2015-10-05 | 2022-12-13 | 주성엔지니어링(주) | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
| JP2018536768A (ja) * | 2015-12-09 | 2018-12-13 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 基板上のスパッタ堆積用に構成されたシステム、スパッタ堆積チャンバ用のシールド装置、およびスパッタ堆積チャンバ内に電気シールドを設ける方法 |
| EP3184073B1 (de) * | 2015-12-22 | 2019-05-29 | Intensiv SA | Werkzeug zur behandlung von interdentalflächen |
| US20180016678A1 (en) | 2016-07-15 | 2018-01-18 | Applied Materials, Inc. | Multi-layer coating with diffusion barrier layer and erosion resistant layer |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US20190088518A1 (en) * | 2017-09-20 | 2019-03-21 | Applied Materials, Inc. | Substrate support with cooled and conducting pins |
| US10904996B2 (en) | 2017-09-20 | 2021-01-26 | Applied Materials, Inc. | Substrate support with electrically floating power supply |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| US11078568B2 (en) * | 2019-01-08 | 2021-08-03 | Applied Materials, Inc. | Pumping apparatus and method for substrate processing chambers |
| JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| KR102640172B1 (ko) | 2019-07-03 | 2024-02-23 | 삼성전자주식회사 | 기판 처리 장치 및 이의 구동 방법 |
| US11462388B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Plasma processing assembly using pulsed-voltage and radio-frequency power |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US11984306B2 (en) | 2021-06-09 | 2024-05-14 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| KR102548570B1 (ko) * | 2021-07-22 | 2023-06-29 | 피에스케이 주식회사 | 기판 처리 장치 및 도어 어셈블리 구동 방법 |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1407613A (zh) * | 2001-09-05 | 2003-04-02 | 周星工程有限公司 | 防止电弧产生的静电卡盘 |
| CN1941318A (zh) * | 2005-09-30 | 2007-04-04 | 东京毅力科创株式会社 | 基板载置机构以及基板处理装置 |
| TW200822281A (en) * | 2006-08-29 | 2008-05-16 | Lam Res Corp | Method of tuning thermal conductivity of electrostatic chuck support assembly |
| TW200921838A (en) * | 2007-07-31 | 2009-05-16 | Applied Materials Inc | Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing |
| TW200949980A (en) * | 2008-03-28 | 2009-12-01 | Tokyo Electron Ltd | Electrostatic chuck and manufacturing method thereof |
| TW201004485A (en) * | 2008-07-04 | 2010-01-16 | Au Optronics Corp | Protection apparatus for preventing arcing and assembling method thereof |
Family Cites Families (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4340462A (en) | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
| DE3316837C2 (de) | 1983-05-07 | 1986-06-26 | Dornier System Gmbh, 7990 Friedrichshafen | Einrichtung zur Erzeugung von Stoßwellen mittels einer Funkenstrecke für die berührungsfreie Zertrümmerung von Konkrementen in Körpern von Lebewesen |
| KR0129663B1 (ko) * | 1988-01-20 | 1998-04-06 | 고다까 토시오 | 에칭 장치 및 방법 |
| US5129359A (en) * | 1988-11-15 | 1992-07-14 | Canon Kabushiki Kaisha | Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate |
| US4948458A (en) | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| US5200232A (en) | 1990-12-11 | 1993-04-06 | Lam Research Corporation | Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors |
| US5800618A (en) * | 1992-11-12 | 1998-09-01 | Ngk Insulators, Ltd. | Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof |
| DE4301189C2 (de) | 1993-01-19 | 2000-12-14 | Leybold Ag | Vorrichtung zum Beschichten von Substraten |
| JPH07249586A (ja) * | 1993-12-22 | 1995-09-26 | Tokyo Electron Ltd | 処理装置及びその製造方法並びに被処理体の処理方法 |
| US5680013A (en) * | 1994-03-15 | 1997-10-21 | Applied Materials, Inc. | Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces |
| US5748663A (en) | 1994-06-08 | 1998-05-05 | Qsource, Inc. | Retangular discharge gas laser |
| US5886863A (en) * | 1995-05-09 | 1999-03-23 | Kyocera Corporation | Wafer support member |
| US6140612A (en) | 1995-06-07 | 2000-10-31 | Lam Research Corporation | Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck |
| US5824605A (en) | 1995-07-31 | 1998-10-20 | Lam Research Corporation | Gas dispersion window for plasma apparatus and method of use thereof |
| US5885423A (en) | 1996-03-29 | 1999-03-23 | Lam Research Corporation | Cammed nut for ceramics fastening |
| US5796066A (en) | 1996-03-29 | 1998-08-18 | Lam Research Corporation | Cable actuated drive assembly for vacuum chamber |
| US6108189A (en) | 1996-04-26 | 2000-08-22 | Applied Materials, Inc. | Electrostatic chuck having improved gas conduits |
| US5820723A (en) | 1996-06-05 | 1998-10-13 | Lam Research Corporation | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| US5948704A (en) | 1996-06-05 | 1999-09-07 | Lam Research Corporation | High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| US6013155A (en) | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
| US6090304A (en) | 1997-08-28 | 2000-07-18 | Lam Research Corporation | Methods for selective plasma etch |
| US6073577A (en) * | 1998-06-30 | 2000-06-13 | Lam Research Corporation | Electrode for plasma processes and method for manufacture and use thereof |
| US6178919B1 (en) | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
| US6230651B1 (en) | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
| US6263829B1 (en) | 1999-01-22 | 2001-07-24 | Applied Materials, Inc. | Process chamber having improved gas distributor and method of manufacture |
| DE19950922A1 (de) | 1999-10-21 | 2001-04-26 | Beru Ag | Zündkerze |
| US6606234B1 (en) | 2000-09-05 | 2003-08-12 | Saint-Gobain Ceramics & Plastics, Inc. | Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow |
| JP2002110679A (ja) | 2000-09-29 | 2002-04-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US6333272B1 (en) | 2000-10-06 | 2001-12-25 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| US6391787B1 (en) | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
| US6581275B2 (en) | 2001-01-22 | 2003-06-24 | Applied Materials Inc. | Fabricating an electrostatic chuck having plasma resistant gas conduits |
| US7161121B1 (en) | 2001-04-30 | 2007-01-09 | Lam Research Corporation | Electrostatic chuck having radial temperature control capability |
| US6847014B1 (en) | 2001-04-30 | 2005-01-25 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
| US6974523B2 (en) | 2001-05-16 | 2005-12-13 | Lam Research Corporation | Hollow anode plasma reactor and method |
| US20040003828A1 (en) | 2002-03-21 | 2004-01-08 | Jackson David P. | Precision surface treatments using dense fluids and a plasma |
| US6921724B2 (en) * | 2002-04-02 | 2005-07-26 | Lam Research Corporation | Variable temperature processes for tunable electrostatic chuck |
| JP2005019606A (ja) * | 2003-06-25 | 2005-01-20 | Anelva Corp | プラズマ処理装置におけるガスシャワーヘッドまたはターゲットプレートを電極に固定する装置 |
| KR100505035B1 (ko) * | 2003-11-17 | 2005-07-29 | 삼성전자주식회사 | 기판을 지지하기 위한 정전척 |
| US7244311B2 (en) * | 2004-10-13 | 2007-07-17 | Lam Research Corporation | Heat transfer system for improved semiconductor processing uniformity |
| JP4687534B2 (ja) | 2005-09-30 | 2011-05-25 | 東京エレクトロン株式会社 | 基板の載置機構及び基板処理装置 |
| US20070119371A1 (en) * | 2005-11-04 | 2007-05-31 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
| ATE425548T1 (de) | 2005-12-22 | 2009-03-15 | Applied Materials Gmbh & Co Kg | Zerstäubungsvorrichtung mit einer rohrkathode und verfahren zum betreiben dieser zerstäubungsvorrichtung |
| US7638003B2 (en) * | 2006-01-12 | 2009-12-29 | Asm Japan K.K. | Semiconductor processing apparatus with lift pin structure |
| US20080254220A1 (en) * | 2006-01-20 | 2008-10-16 | Tokyo Electron Limited | Plasma processing apparatus |
| US7699957B2 (en) | 2006-03-03 | 2010-04-20 | Advanced Display Process Engineering Co., Ltd. | Plasma processing apparatus |
| KR101020160B1 (ko) * | 2006-03-03 | 2011-03-09 | 엘아이지에이디피 주식회사 | 플라즈마 처리장치 |
| US20070264443A1 (en) | 2006-05-09 | 2007-11-15 | Applied Materials, Inc. | Apparatus and method for avoidance of parasitic plasma in plasma source gas supply conduits |
| JP5160112B2 (ja) * | 2007-03-19 | 2013-03-13 | 東京エレクトロン株式会社 | 処理装置内構造体、プラズマ処理装置内構造体及びプラズマ処理装置 |
| US20100101728A1 (en) * | 2007-03-29 | 2010-04-29 | Tokyo Electron Limited | Plasma process apparatus |
| US7667944B2 (en) | 2007-06-29 | 2010-02-23 | Praxair Technology, Inc. | Polyceramic e-chuck |
| CN102737949B (zh) * | 2007-07-20 | 2016-09-07 | 应用材料公司 | 等离子体工艺设备中用于至射频驱动电极的气体传递的射频扼流器 |
| US7848076B2 (en) | 2007-07-31 | 2010-12-07 | Applied Materials, Inc. | Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing |
| JP5174582B2 (ja) * | 2007-08-30 | 2013-04-03 | 日本碍子株式会社 | 接合構造体 |
| JP2009060011A (ja) * | 2007-09-03 | 2009-03-19 | Tokyo Electron Ltd | 基板載置台、基板処理装置、及び温度制御方法 |
| WO2009065016A1 (en) * | 2007-11-16 | 2009-05-22 | Applied Materials, Inc. | Rpsc and rf feedthrough |
| US20100314599A1 (en) | 2007-11-16 | 2010-12-16 | Ulvac, Inc. | Chalcogenide film and method of manufacturing same |
| JP5584517B2 (ja) * | 2010-05-12 | 2014-09-03 | 東京エレクトロン株式会社 | プラズマ処理装置及び半導体装置の製造方法 |
-
2010
- 2010-07-27 US US12/844,527 patent/US9728429B2/en active Active
-
2011
- 2011-07-07 TW TW100124043A patent/TWI662864B/zh active
- 2011-07-18 CN CN201180036642.1A patent/CN103026799B/zh active Active
- 2011-07-18 SG SG2013004346A patent/SG187142A1/en unknown
- 2011-07-18 JP JP2013521760A patent/JP5815703B2/ja active Active
- 2011-07-18 SG SG10201505834VA patent/SG10201505834VA/en unknown
- 2011-07-18 KR KR1020137002011A patent/KR101854937B1/ko active IP Right Grant
- 2011-07-18 WO PCT/US2011/001270 patent/WO2012018368A2/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1407613A (zh) * | 2001-09-05 | 2003-04-02 | 周星工程有限公司 | 防止电弧产生的静电卡盘 |
| CN1941318A (zh) * | 2005-09-30 | 2007-04-04 | 东京毅力科创株式会社 | 基板载置机构以及基板处理装置 |
| TW200822281A (en) * | 2006-08-29 | 2008-05-16 | Lam Res Corp | Method of tuning thermal conductivity of electrostatic chuck support assembly |
| TW200921838A (en) * | 2007-07-31 | 2009-05-16 | Applied Materials Inc | Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing |
| TW200949980A (en) * | 2008-03-28 | 2009-12-01 | Tokyo Electron Ltd | Electrostatic chuck and manufacturing method thereof |
| TW201004485A (en) * | 2008-07-04 | 2010-01-16 | Au Optronics Corp | Protection apparatus for preventing arcing and assembling method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| SG187142A1 (en) | 2013-02-28 |
| JP5815703B2 (ja) | 2015-11-17 |
| WO2012018368A2 (en) | 2012-02-09 |
| US9728429B2 (en) | 2017-08-08 |
| JP2013538417A (ja) | 2013-10-10 |
| KR101854937B1 (ko) | 2018-05-04 |
| US20120024449A1 (en) | 2012-02-02 |
| WO2012018368A3 (en) | 2012-04-05 |
| WO2012018368A9 (en) | 2012-07-19 |
| SG10201505834VA (en) | 2015-09-29 |
| CN103026799A (zh) | 2013-04-03 |
| KR20130132384A (ko) | 2013-12-04 |
| TW201220961A (en) | 2012-05-16 |
| CN103026799B (zh) | 2016-03-30 |
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