TWI662598B - Semiconductor device and manufacturing method of semiconductor device - Google Patents

Abstract

The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device. The subject is to form a high-impedance range that can withstand heat treatment at 200 ° C or higher. The solution is a method for manufacturing a semiconductor device (10). The method includes: irradiating hydrogen (H) ions on a p-type semiconductor substrate (12) on which a semiconductor element is formed, and a hydrogen density of 2 × 10 ¹⁵ cm ⁻³ or more and 2 × 10 ^In the range of ¹⁷ cm ^-3 or less, the formation resistance is higher than that of the p-type semiconductor substrate (12) before ion irradiation, and the high resistance range (30) is higher than that formed by heating at a temperature of 200 ° C to 400 ° C. Those with a p-type semiconductor substrate (12) in the impedance range (30).

Description

Semiconductor device and manufacturing method of semiconductor device

[0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.

[0002] In recent years, CMOS technology has improved, and SoCs (System on a Chip) that mix analog circuits with digital circuits have been used for various purposes. A high impedance range is formed in a semiconductor substrate in such a way as to be mixed in a wafer in order to improve the characteristics of an analog circuit. For example, when the energy is changed by accelerating from the back surface of the element range, and when ion irradiation is performed a plurality of times, a high impedance range is formed to reduce interference (for example, refer to Patent Document 1). [Prior Art Document] [Patent Document] [0003] [Patent Document 1] Japanese Patent Laid-Open No. 2015-119039

[Problems to be Solved by the Invention] [0004] In the above literature, it is reported that when a high resistance range formed by ion irradiation is added to a heat treatment at 200 ° C or higher, a significant decrease in the resistivity occurs, In addition, it is described that it is preferable to use a heat treatment at 200 ° C or lower for the purpose of stabilization of the resistivity. However, in the manufacturing process of the semiconductor device, there is a process after performing a heat treatment at 200 ° C or higher. In this case, it is impossible to maintain a high resistivity obtained by ion irradiation. [0005] One of the exemplified objects of one aspect of the present invention is to provide a technician who forms a high impedance range that can withstand heat treatment at 200 ° C or higher. [Means for Solving the Problem] [0006] A method for manufacturing a semiconductor device according to one aspect of the present invention includes irradiating hydrogen (H) ions on a p-type semiconductor substrate on which a semiconductor element is formed, and the hydrogen density is 2 × 10 ¹⁵ cm ^-3 or more, 2 × 10 ¹⁷ cm ^-3 or less, the formation impedance is higher than that of the p-type semiconductor substrate before ion irradiation, and the high resistance range is formed by heating at a temperature of 200 ° C to 400 ° C. High-impedance p-type semiconductor substrate. [0007] Another aspect of the present invention is a semiconductor device. This device includes a p-type semiconductor substrate, a semiconductor element provided on the p-type semiconductor substrate, and a high impedance range provided in the p-type semiconductor substrate. The high impedance range means that the hydrogen density is in the range of 2 × 10 ¹⁵ cm ^-3 or more and 2 × 10 ¹⁷ cm ^-3 or less, and the resistivity is in a range higher than that of the p-type semiconductor substrate. [0008] However, a configuration in which any combination of the above constituent elements or the constituent elements or expressions of the present invention are replaced with each other among methods, devices, systems, etc. is also effective as a form of the present invention. [Effects of the Invention] [0009] According to the present invention, a high impedance range capable of withstanding heat treatment at 200 ° C or higher can be formed.

[0011] Hereinafter, aspects of the present invention will be described in detail. However, the constitutions described below are examples and are not intended to limit the scope of the present invention. In addition, in the description of the drawings, the same elements are denoted by the same reference numerals, and overlapping descriptions are suitably omitted. In the following description, the thickness or size of a semiconductor substrate or other layer is a structure for convenience of explanation in each cross-sectional view referred to, and it is not necessarily a display of actual size or ratio. 1 is a cross-sectional view schematically showing a structure of a semiconductor device 10 according to an embodiment. The semiconductor device 10 is an integrated circuit (IC) of a system LSI or a single-chip system. The semiconductor device 10 includes a semiconductor substrate 12 and a wiring layer 18. [0013] The semiconductor substrate 12 is a low-resistance semiconductor substrate having an impedance of 100 Ω ･ cm or less, and a semiconductor substrate having an impedance of approximately 1 to 100 Ω ･ cm. The semiconductor substrate 12 is, for example, a p-type silicon (Si) wafer manufactured by the Chakrasky (CZ) method. The wafers produced by the CZ method are compared with high-impedance wafers produced by the suspension zone melting (FZ) method or the like, and have a low impedance ratio and are inexpensive. In one embodiment, the resistivity of the semiconductor substrate 12 is 4Ω ･ cm, and the p-type carrier concentration is 3.4 × 10 ¹⁵ cm ^-3 . [0014] The main surface 14 of the semiconductor substrate 12 is provided with a first element range 22 and a second element range 24. For example, the first element range 22 is provided with a first semiconductor element 26 for a digital circuit, and the second element range 24 is provided with a second semiconductor element 28 for an analog circuit. The first semiconductor element 26 and the second semiconductor element 28 are, for example, a transistor or a diode. Impurity diffusion layers are formed in each of the first element range 22 and the second element range 24 to form a well type range, a source / drain range, a contact range, and the like for forming a semiconductor element. [0015] In this specification, a direction orthogonal to the main surface 14 of the semiconductor substrate 12 is referred to as a vertical direction or a depth direction. In the semiconductor substrate 12, a direction toward the main surface 14 is referred to as an upward direction or an upper side, and a direction toward the back surface 16 opposite to the main surface 14 is referred to as a lower direction or a lower side. It should be noted that a direction parallel to the main surface 14 is referred to as a horizontal direction or a horizontal direction. [0016] The internal system of the semiconductor substrate 12 is provided with a high impedance range 30. The high impedance range 30 is a range in which the resistivity is higher than that of the main body portion of the semiconductor substrate 12. The high impedance range 30 has a resistivity of 100 Ω ･ cm or more, for example, a resistivity of 500 Ω ･ cm or more, and preferably 1 kΩ ･ cm or more. The high-impedance range 30 includes a groove-type high-impedance range 32 and a flat-type high-impedance range 34. [0017] The groove-type high-impedance range 32 is provided in a separation range 20 between the first element range 22 and the second element range 24, and has a depth from the main surface 14 of the semiconductor substrate 12 toward the back surface 16 to a depth. To form. The depth of the groove-type high-impedance range 32 is more than 20 μm, and it is preferably about 50 μm to 200 μm. The groove-type high-impedance range 32 is formed so as to reach a position deeper than the impurity diffusion layer formed in the first element range 22 or the second element range 24. The notch type high impedance range 32 has, for example, a function of blocking the interference from the digital circuit toward the analog circuit and improving the characteristics of the analog circuit. [0018] The planar high-impedance range 34 extends in the second element range 24 and extends in the horizontal direction. The planar high-impedance range 34 is a self-separating range 20, extends across the second element range 24, and extends in the horizontal direction. The high-impedance range 34 may be provided in a continuous high-impedance range continuous with the recessed high-impedance range 32. The planar high impedance range 34 is formed directly below the analog circuit, and contributes to the improvement of the characteristics of the analog circuit. [0019] In the illustrated example, both the grooved high-impedance range 32 and the planar high-impedance range 34 are formed inside the semiconductor substrate 12. However, in the modified example, only the grooved high-impedance range is provided. Either the range 32 or the planar high-impedance range 34 may be used. [0020] The high-impedance range 30 is formed by irradiating hydrogen (H) ions on the main portion of the semiconductor substrate 12 of the low-resistance substrate. When the wafer is subjected to ion irradiation, the ions reach a depth corresponding to the acceleration energy of the ions. At this time, lattice defects are formed in the vicinity of the range including the reach, and the regularity (periodic) of the crystals is in a state of confusion. In such a range where there are many lattice defects, the carrier (electron or hole) becomes easily scattered, which hinders the movement of the carrier. As a result, in a range where local lattice defects are generated by ion irradiation, the resistivity increases compared to before irradiation. [0021] The position or range of the depth direction in which the resistivity increases by ion irradiation can be adjusted by appropriately selecting the acceleration energy or irradiation amount of ion irradiation. For example, a person who adjusts the acceleration energy of ions during ion irradiation can adjust the depth position where a high impedance range is formed. In addition, those accelerating energy by selective ion irradiation can adjust the depth position forming a high impedance range, the range in the depth direction (half width), or the diffusion width in the horizontal direction. Furthermore, a person who performs ion irradiation multiple times while changing acceleration energy can spread in the depth direction to form a thicker high-impedance range. [0022] In this embodiment, hydrogen (H) ions are irradiated with an acceleration energy of 1 MeV or more and 100 MeV or less. For example, monovalent hydrogen ions ( ¹ H ⁺ ) are irradiated with acceleration energies of 4 MeV, 8 MeV, and 17 MeV. As a device for irradiating an ion beam having such an acceleration energy, a device using a cyclotron method or a van der Graaff method is used. By using such an irradiation condition, in a silicon wafer, ions can be reached from the vicinity of the main surface 14 of the semiconductor substrate 12 to a position having a depth of 100 μm or more. [0023] The resistivity in a high impedance range formed by ion irradiation depends on the density (defect density) of the lattice defects generated. According to the findings of the present inventors, it is understood that if the defect density is 1 × 10 ¹⁷ cm ^-3 or more, it is possible to obtain the resistivity of 1 kΩ ･ cm or more optimally. Such a defect density is achieved when the acceleration energy of the irradiated ions is 4 MeV to 17 MeV, and the irradiation amount (quantity) of the hydrogen ions can be realized as 1 × 10 ¹³ cm ^-2 or more. [0024] Forming a high-impedance range by doing this means that when the heat treatment is added, the resistivity decreases. According to the inventors' opinion, the resistivity decreases when the semiconductor substrate 12 heated by the ion is heated to 200 ° C or higher, and the resistivity is reduced when the semiconductor substrate 12 is heated to 300 ° C or higher than 400 ° C. It is significantly reduced. This is considered to be caused by the heat treatment, the lattice defects are recovered, and the defect density is decreased. Accordingly, in the case where a high impedance range is formed by ion irradiation, it may be better to add a heat treatment at 200 ° C or higher in subsequent processes. [0025] On the other hand, in order to position the high-impedance range 30 at the target separation range 20 or the second element range 24, it is before the wafer is diced, that is, a stage ahead of the process after semiconductor processing. It is necessary to perform ion irradiation. In the post-process, wafer bonding or wire bonding is performed, which is called a heat treatment of resin sealing, and in these processes, the semiconductor substrate 12 can be heated to a temperature of about 200 ° C to 300 ° C. For this reason, the resistivity in the high-impedance range is lowered by the heat treatment in the subsequent process, and the desired resistivity (for example, 500 Ω500cm or more) may not be maintained. [0026] Therefore, in this embodiment, a person who activates hydrogen that is driven into the semiconductor substrate 12 via ion irradiation through heat treatment can also act as a resistivity that maintains a high impedance range even after the heat treatment. When hydrogen is activated by heat treatment, the concentration of the n-type carrier increases through donorization. However, the majority of the carriers of the p-type semiconductor substrate 12 (p-type carriers) are neutralized, and the conductivity decreases. For example, as a result of activation via hydrogen, the semiconductor substrate 12 can be neutralized to increase the resistivity as an n-type carrier concentration that can obtain the same level as the p-type carrier concentration of the semiconductor substrate 12. [0027] FIG. 2 is a graph showing an example of changes in resistivity through helium (He) ion irradiation and heat treatment in a comparative example. In the comparative example, instead of hydrogen ion ( ¹ H ⁺ ), helium ion ( ³ He ²⁺ ) was used. The acceleration energy is 23 MeV, the quantity is 1.0 × 10 ¹³ cm ^-2 , and the irradiation target is a p-type silicon substrate of about 4Ω ･ cm. FIG. 2 shows the resistivity distribution in the depth direction of the substrate before ion irradiation, after ion irradiation (before heat treatment), and after heat treatment (200 ° C, 250 ° C, 300 ° C). As shown in the figure, before the heat treatment, a high impedance range of about 1 to 2 kΩ ･ cm can be formed up to a depth of about 60 μm, and after the heat treatment at 200 ° C., a high impedance range with a similar impedance distribution can be maintained. However, after the heat treatment at 250 ° C, the resistivity in the high-impedance range is less than 1 kΩ 而 cm, and in some cases it is less than 500Ω ･ cm, and after the heat treatment at 300 ° C, the resistivity in the high-resistance range becomes insufficient. 100Ω ･ cm. In the case of ion irradiation using helium in this way, it is understood that the resistivity in the high-impedance range decreases through a heat treatment in excess of 200 ° C, and the resistivity significantly decreases in a heat treatment above 300 ° C. [0028] FIG. 3 is a graph showing an example of changes in resistivity through hydrogen (H) ion irradiation and heat treatment according to the embodiment. This embodiment is irradiated with hydrogen ions ( ¹ H ⁺ ), the acceleration energy is 8 MeV, the quantity is 1.0 × 10 ¹⁴ cm ^-2 , and the irradiation target is a p-type silicon substrate of about 4Ω ･ cm. Fig. 3 shows the resistivity distribution in the depth direction of the substrate before ion irradiation, after ion irradiation (before heat treatment), and after heat treatment (250 ° C, 400 ° C). As shown in the figure, before the heat treatment, a high impedance range of 1 kΩ ･ cm or more can be formed up to a depth of about 110 μm, and after the heat treatment at 250 ° C., the high impedance range with the same impedance ratio distribution can be maintained. In addition, after a heat treatment at 400 ° C, a high impedance range of 1 kΩ ･ cm or more can be maintained in a depth of 10 μm to 80 μm. In this way, a person using hydrogen ions can maintain a high impedance range of 500 Ω ･ cm or more, ideally 1 kΩ ･ cm or more, even when a heat treatment exceeding 200 ° C or a heat treatment over 300 ° C is added. [0029] FIG. 4 is a graph showing an example of a change in resistivity through hydrogen (H) ion irradiation and heat treatment according to another embodiment. In this embodiment, the hydrogen ion ( ¹ H ⁺ ) is irradiated in the same manner as in FIG. 3, the acceleration energy is 8 MeV, and the irradiation target is a p-type silicon substrate of about 4Ω ･ cm. This embodiment uses a quantity different from that in FIG. 3, and is a high quantity of 2.6 × 10 ^-14 cm ⁻² as compared with the above-mentioned embodiment. FIG. 4 shows the resistivity distribution in the depth direction of the substrate before ion irradiation, after ion irradiation (before heat treatment), and after heat treatment (200 ° C, 300 ° C, 400 ° C). As shown in the figure, before the heat treatment, a high impedance range of 1 kΩ ･ cm or more can be formed to a depth of about 45 μm, and after the heat treatment at 200 ° C., the high impedance range with a similar impedance ratio distribution can be maintained. However, after a heat treatment at 300 ° C, the resistivity at a depth of about 10 to 30 μm becomes less than 1 kΩ ･ cm, and after a heat treatment at 400 ° C, the middle resistance becomes less than 100 Ω ･ cm. This is considered to be due to the fact that when the amount of hydrogen ions is increased, hydrogen is donated excessively, the conductivity type is reversed from p-type to n-type, and resistance is increased by the increase in the concentration of the n-type carrier that becomes the majority carrier. The rate is down. [0030] From the above comparative examples and examples, in order to maintain a high resistivity (500 Ω ･ cm or more) after the heat treatment exceeding 200 ° C, it can be said that the amount of hydrogen ions and the heat treatment must be appropriately controlled. Temperature person. [0031] FIG. 5 is a graph showing the activation rate of hydrogen through heat treatment, and shows the relationship between temperature and activation rate. As shown in the figure, the activation rate of hydrogen in the range of 200 ° C to 400 ° C is low, and the increase of the activation rate by temperature rise is also slow. On the other hand, when it exceeds 400 ° C., the increase rate of the activation rate by temperature rise becomes large, and the value of the activation rate also exceeds 10%. Accordingly, by using a heat treatment in which the increase in the activation rate through a temperature rise is gradually in the range of 200 ° C to 400 ° C, even if there is an individual difference in the temperature of the heat treatment of the subsequent process, the heat treatment can be suppressed. Significant change in resistivity at different temperatures. [0032] FIG. 6 is a graph schematically showing a change in the carrier concentration through heat treatment, and for three different hydrogen densities, it schematically shows the value of the n-type carrier concentration that is donorized through heat treatment. The A-series hydrogen density is 5 × 10 ¹⁶ cm ^-3 , and corresponds to the embodiment of FIG. 3 (energy: 8 MeV, quantity: 1.0 × 10 ¹⁴ cm ^-2 ). The B-system hydrogen density is 1.3 × 10 ¹⁷ cm ^-3 , and corresponds to the embodiment of FIG. 4 (energy: 8 MeV, quantity: 2.6 × 10 ¹⁴ cm ^-2 ). The C-system hydrogen density is 5 × 10 ¹⁵ cm ^-3 , and the D-system hydrogen density is 2.5 × 10 ¹⁶ cm ^-3 . However, the dotted line in the graph shows the p-type carrier concentration in the semiconductor substrate, and it is 3.4 × 10 ¹⁵ cm ^-3 . [0033] In the case of A, at 200 ° C, the n-type carrier concentration becomes about 1.0 × 10 ¹⁵ cm ^-3 , and at 330 ° C, it becomes 3.4 × 10 ¹⁵ cm ^{-3 the} same as the p-type carrier concentration of the substrate. The degree was about 6.0 × 10 ¹⁵ cm ^-3 at 400 ° C. As a result, in the range of 250 ° C to 400 ° C, where the resistivity reduction through the recovery of the lattice defect becomes noticeable, the p-type carrier concentration and the n-type carrier concentration become the same, and the substrate can be neutralized with high impedance. Rate. As a result, as shown in FIG. 3, even if heat treatment is performed at 200 ° C. to 400 ° C., a high impedance of 1 kΩ ･ cm or more can be maintained. [0034] In the case of B, at 200 ° C, the n-type carrier concentration becomes about 2.6 × 10 ¹⁵ cm ^-3 , and at 230 ° C, it becomes 3.4 × 10 ¹⁵ cm ^{-3 which} is the same as the p-type carrier concentration of the substrate. The degree is about 6.8 × 10 ¹⁵ cm ⁻³ which is twice the concentration of the p-type carrier of the substrate at about 300 ° C., and about 1.0 × 10 ¹⁶ cm ⁻³ or more at 350 ° C. or higher. As a result, as shown in FIG. 4, when the heat treatment is performed at a temperature higher than 300 ° C., the resistivity decreases through the n-type inversion of the substrate, and when the heat treatment is performed at 400 ° C., the resistivity decreases further. [0035] In the case of C, the hydrogen density is 0.1 times that of A. The carrier concentration due to the donorization of hydrogen is reduced, and the p-type carrier of the substrate is not reached even if a heat treatment above 400 ° C is added. Concentration (3.4 × 10 ¹⁵ cm ^-3 ). As a result, it is considered that the neutralization system of the substrate is not generated even if the heat treatment is added at 200 ° C. to 400 ° C., and only the decrease in the resistivity through the decrease in the defect density is considered. The same is true for D. The hydrogen density is 0.5 times that of A. Even if the heat treatment at 200 ° C to 400 ° C is added, the p-type carrier concentration (3.4 × 10 ¹⁵ cm ^-3 ) of the substrate is not reached. Neutralization of the substrate occurs, and only a decrease in resistivity through reduction in defect density occurs. [0036] FIG. 7 is a graph showing an example of the relationship between the hydrogen density and the change in resistivity through heat treatment, and shows the change in resistivity for conditions A, B, C, and D specified in FIG. 6. As shown in the figure, in the case of A (hydrogen density: 5 × 10 ¹⁶ cm ^-3 ), a high impedance of 1 kΩ ･ cm or higher can be maintained in the range of 200 ° C to 400 ° C. In the case of B (hydrogen density: 1.3 × 10 ¹⁷ cm ^-3 ), a high impedance of 500 Ω ･ cm or higher can be maintained in a range of 200 ° C to 300 ° C, but the resistivity becomes 200 Ω ･ cm at 350 ° C or higher. the following. In the case of C (hydrogen density: 5 × 10 ¹⁵ cm ^-3 ), a high resistance of 1 kΩ ℃ cm or higher can be maintained in a 200 ° C heat treatment, but when the heat treatment exceeds 200 ° C, the resistivity decreases significantly, and at 250 ° C After heat treatment at a temperature higher than or equal to 10 ° C, the temperature becomes 10 Ω ･ cm or less. This is considered to be because the hydrogen density is low and the concentration of the n-type carrier is insufficient for neutralization. In the case of D (hydrogen density: 2.5 × 10 ¹⁶ cm ^-3 ), a high impedance of 500 Ω ･ cm or higher can be maintained in a range of 200 ° C to 230 ° C, but the resistivity becomes 200 Ω at 250 ° C or higher. cm or less. [0037] From the above research, in order to maintain a high resistivity even after the heat treatment, it is necessary to achieve an n-type carrier concentration in the temperature range of 200 ° C. to 400 ° C. to the same degree as the p-type carrier concentration of the semiconductor substrate 12. The activation rate of hydrogen through the heat treatment at 200 ° C to 400 ° C is about 2% to 10%, and the hydrogen density of the semiconductor substrate 12 may be about 10 to 50 times the p-type carrier concentration. Generally speaking, the p-type carrier concentration of a low-resistance (1 ~ 100Ω ･ cm) p-type silicon substrate is from 10 ¹⁴ to 10 ¹⁶ cm ^-3 . For example, 5 × 10 ¹⁵ cm ^-3 or more 2 × A hydrogen density of 10 ^-17 cm ^-3 or less is sufficient. For example, when the p-type carrier concentration is 3.4 × 10 ¹⁵ cm ^-3 , a hydrogen density of 3.4 × 10 ¹⁶ cm ^-3 or more and 1.7 × 10 ^-17 cm ^-3 or less is preferred. [0038] However, when the conductivity type of at least a part of the high-impedance range 30 is inverted to an n-type, the formation of a pn junction in the high-impedance range has an effect on the operation of circuit elements formed on the semiconductor substrate 12. Yu. In order to suppress such an influence, the concentration of the n-type carrier through the activation of hydrogen does not exceed the concentration of the p-type carrier of the semiconductor substrate 12, and the value of the hydrogen density may be controlled. That is, the conductive type in the high impedance range 30 is a p-type ground, and the hydrogen density and the heat treatment temperature can be controlled. [0039] FIG. 8 is a graph showing an example of the relationship between the amount of hydrogen ion irradiation and the hydrogen density. The acceleration energy of hydrogen ions is shown as 4MeV, 8MeV, and 17MeV. As shown, the amount of hydrogen ions is proportional to the hydrogen density after irradiation. In addition, the lower the irradiation energy, the higher the hydrogen density obtained. This is because when the acceleration energy is low, the depth range of the hydrogen ion implantation is limited, and the hydrogen injection amount per unit area is increased. From the chart, for the purpose of achieving a hydrogen density of 5 × 10 ¹⁵ cm ^-3 or more and 2 × 10 ^-17 cm ^-3 or less, for 4MeV, such as 1 × 10 ^-13 cm ^-2 or more 2 × 10 ^-14 cm ^-2 or less and 8 MeV, such as 1 × 10 ^-13 cm ^-2 or more 4 × 10 ^-14 cm ^-2 or less, 17 MeV, such as 3.6 × 10 ^-13 cm ^-2 or more 1 × 10 ^-15 cm ^-2 or less is sufficient. However, if ion irradiation is performed in such an amount, a defect density of 1 × 10 ¹⁷ cm ^-3 or more can be obtained, and a high resistivity of 500Ω ･ cm or more can be achieved in a state before heat treatment. . [0040] Next, a method for manufacturing the semiconductor device 10 according to this embodiment will be described. FIG. 9 is a flowchart schematically showing a manufacturing method of the semiconductor device 10. First, elements are formed on the p-type semiconductor substrate 12 through various processes (S10), a wiring layer is formed on the semiconductor substrate 12, and a protective film (S14) is formed to protect the formed elements or wiring. The process of S10 ~ S14 is a process called "pre-engineering" in semiconductor processing, and it can perform high temperature processing above 400 ° C such as thermal oxidation, thermal diffusion, CVD, and annealing. Next, the semiconductor substrate 12 is irradiated with hydrogen ions to form a high impedance range 30 (S16), and then the back surface of the semiconductor substrate 12 is polished (S18). The projects of S16 and S18 are the so-called "intermediate projects" or "PPP (Post Passivation Process)" projects. [0041] Next, a process including heat treatment (S20) is performed to complete the semiconductor integrated circuit. The processes after S20 include, for example, a process of dicing a wafer and singulating the wafer, a process of bonding the singulated wafer to a mounting substrate, and a process of bonding the mounting substrate to the wafer by wire bonding. Resin and wafer sealing process. For example, in a wafer bonding process, a wire bonding process, and a resin sealing process, a heat treatment of about 200 ° C. to 300 ° C. is performed. In an embodiment, the maximum temperature of the heat treatment is about 260 ° C. However, an annealing process may be performed in which the semiconductor device 10 is additionally heated by bonding and sealing. In this annealing treatment, when the high impedance range 30 is heated at a specific temperature of 200 ° C. to 400 ° C., the resistivity of the high impedance range 30 may be stabilized. This annealing treatment is sufficient if it is performed for a relatively short time of 10 minutes or less, but it may also be 5 minutes or less, 1 minute or less, or 30 seconds or less. [0042] The present invention has been described based on the embodiments. The present invention is not limited to the above-mentioned embodiments, but various design changes can be made. It is understood by those skilled in the art that various modifications can be made, or such modifications are also included in the scope of the present invention. [0043] In the above-mentioned embodiment, those having a high impedance range of 30 are formed by irradiating only hydrogen ions. In the modification, a high impedance range may be formed when irradiated with ions other than hydrogen. For example, the hydrogen density in the above-mentioned numerical range may be achieved by irradiation with hydrogen ions, and the defect density may be achieved in the above-mentioned numerical range by irradiation with ion species other than hydrogen. In a modification, when combined with hydrogen ion and helium ion irradiation, a high impedance range capable of maintaining high impedance (500 Ω 阻抗 cm or more) can be formed even if heat treatment is performed at 200 ° C or higher.

[0044]

10‧‧‧Semiconductor device

12‧‧‧ semiconductor substrate

14‧‧‧ main face

16‧‧‧ back

18‧‧‧ wiring layer

20‧‧‧ separation range

22‧‧‧The first component range

24‧‧‧ 2nd component range

26‧‧‧The first semiconductor element

28‧‧‧Second semiconductor element

30‧‧‧High impedance range

32‧‧‧ Notch type high impedance range

34‧‧‧Planar high impedance range

1 is a cross-sectional view schematically showing a structure of a semiconductor device according to an embodiment. FIG. 2 is a graph showing an example of a change in resistivity through helium (He) ion irradiation and heat treatment in a comparative example. FIG. 3 is a graph showing an example of changes in resistivity through hydrogen (H) ion irradiation and heat treatment in the examples. FIG. 4 is a graph showing an example of changes in resistivity by irradiation with hydrogen (H) ions and heat treatment in another example. FIG. 5 is a graph showing the activation rate of hydrogen through heat treatment. FIG. 6 is a graph schematically showing a change in the concentration of a carrier through heat treatment. FIG. 7 is a graph showing an example of the relationship between the hydrogen density and the change in resistivity through heat treatment. FIG. 8 is a graph showing an example of the relationship between the amount of hydrogen ion irradiation and the hydrogen density. FIG. 9 is a flowchart schematically showing a method of manufacturing a semiconductor device.

Claims (7)

A method for manufacturing a semiconductor device, comprising: irradiating hydrogen (H) ions on a p-type semiconductor substrate on which a semiconductor element is formed, and a hydrogen density of 5 × 10 ¹⁵ cm ^-3 or more and 2 × 10 ¹⁷ cm ^-3 or less In the range, the formation resistivity is higher than that of the aforementioned p-type semiconductor substrate before ion irradiation, and the p-type semiconductor substrate having the aforementioned high resistance range is formed by heating at a temperature of 200 ° C to 400 ° C; The resistivity of the p-type semiconductor substrate before irradiation is 100 Ωcm or less, and the resistivity of the aforementioned high impedance range after the heating is 500 Ωcm or more. A method for manufacturing a semiconductor device, comprising: irradiating hydrogen (H) ions on a p-type semiconductor substrate on which a semiconductor element is formed, and a hydrogen density of 5 × 10 ¹ 5cm ^-3 or more and 2 × 10 ¹⁷ cm ^-3 or less The range of formation impedance is higher than that of the aforementioned p-type semiconductor substrate before ion irradiation, and the p-type semiconductor substrate having the aforementioned high impedance range is formed by heating at a temperature of 200 ° C to 400 ° C; The impedance range is formed by a defect density of 1 × 10 ¹⁷ cm ^-3 or more. For example, the method for manufacturing a semiconductor device according to item 1 or 2 of the scope of patent application, wherein the p-type semiconductor substrate having the aforementioned high impedance range is heated at a temperature of 200 ° C to 300 ° C. A method for manufacturing a semiconductor device, comprising: irradiating hydrogen (H) ions on a p-type semiconductor substrate on which a semiconductor element is formed, and a hydrogen density of 5 × 10 ¹⁵ cm ^-3 or more and 2 × 10 ¹⁷ cm ^-3 or less The range of formation impedance is higher than that of the aforementioned p-type semiconductor substrate before ion irradiation, and the p-type semiconductor substrate with the aforementioned high-resistance range is formed by heating at a temperature of 200 ° C to 400 ° C; The impedance range is formed by irradiation of hydrogen ions with an irradiation energy of 4 MeV or more and 17 MeV or less, and a quantity of 2 × 10 ¹³ cm ^-2 or more and 2 × 10 ¹⁴ cm ^-2 or less. For example, the method for manufacturing a semiconductor device according to item 1 or item 4 of the scope of patent application, wherein the heating time is 10 minutes or less. A method for manufacturing a semiconductor device, comprising: irradiating hydrogen (H) ions on a p-type semiconductor substrate on which a semiconductor element is formed, and a hydrogen density of 5 × 10 ¹⁵ cm ^-3 or more and 2 × 10 ¹⁷ cm ^-3 or less The range of formation impedance is higher than that of the aforementioned p-type semiconductor substrate before ion irradiation, and the p-type semiconductor substrate with the aforementioned high-resistance range is formed by heating at a temperature of 200 ° C to 400 ° C; The impedance range is a value obtained by forming the hydrogen density at a value that is 10 times or more and 50 times or less the carrier concentration of the p-type semiconductor substrate before the ion irradiation. A method for manufacturing a semiconductor device, comprising: irradiating hydrogen (H) ions on a p-type semiconductor substrate on which a semiconductor element is formed, and a hydrogen density of 5 × 10 ¹⁵ cm ^-3 or more and 2 × 10 ¹⁷ cm ^-3 or less The range of formation impedance is higher than that of the aforementioned p-type semiconductor substrate before ion irradiation, and the p-type semiconductor substrate with the aforementioned high-resistance range is formed by heating at a temperature of 200 ° C to 400 ° C; The impedance range is the p-type conductivity type after heating.