TW201834029A - Semiconductor device and manufacturing method of semiconductor device which can form a high-resistance region capable of withstanding heat treatment above 200 degree Celsius - Google Patents

Abstract

The invention relates to a semiconductor device and manufacturing method of semiconductor device. It can form a high-resistance region capable of withstanding heat treatment above 200 degree Celsius. The manufacturing method of semiconductor device 10 comprises steps of irradiating a p-type semiconductor substrate 12 formed with the semiconductor element by hydrogen (H) ions, where the hydrogen density is in a range of above 2x10.supra.15cm.supra.-3 and below 2x10.supra.17cm.supra.-3 to form a high-resistance region 30 having the resistivity higher than that of the p-type semiconductor substrate 12 before ion irradiation, and heating at temperature of above 200 degree Celsius and below 400 degree Celsius to form the p-type semiconductor substrate 12 having the high-resistance region 30.

Description

Semiconductor device and method of manufacturing the same

[0001] The present invention relates to a semiconductor device and a method of manufacturing the same.

[0002] In recent years, CMOS technology has been upgraded, and SoC (System on a Chip), which mixes analog circuits and digital circuits, has been used for various purposes. In such a manner that it is mixed in the wafer, a high impedance range is formed in the semiconductor substrate for the purpose of improving the characteristics of the analog circuit. For example, when the energy is changed from the back surface of the element range, and the ion irradiation is performed plural times, a high impedance range for the disturbance reduction is formed (for example, refer to Patent Document 1). [Prior Art Document] [Patent Document] [0003] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2015-119039

[Problem to be Solved by the Invention] [0004] In the above-mentioned literature, it is reported that when a high-impedance range formed by ion irradiation is applied and a heat treatment of 200 ° C or more is added, a significant drop in the impedance ratio occurs. It is described that it is preferable to add a heat treatment of 200 ° C or less for the purpose of setting the stability of the resistivity. However, in the manufacturing process of a semiconductor device, it is performed after heat treatment with a temperature of 200 ° C or higher, and in this case, the high impedance ratio obtained by ion irradiation cannot be maintained. [0005] One of the exemplary objects of a certain aspect of the present invention provides a technique for forming a high impedance range capable of withstanding heat treatment of 200 ° C or higher. [Means for Solving the Problem] [0006] A method of manufacturing a semiconductor device according to another aspect of the present invention includes: irradiating hydrogen (H) ions to a p-type semiconductor substrate on which a semiconductor element is formed, and having a hydrogen density of 2 × 10 ¹⁵ In the range of cm ^-3 or more and 2 × 10 ¹⁷ cm ^-3 or less, the impedance ratio is higher than the high-impedance range of the p-type semiconductor substrate before ion irradiation, and is formed by heating at a temperature of 200 ° C or more and 400 ° C or less. A p-type semiconductor substrate with a high impedance range. Another aspect of the present invention is a semiconductor device. This device includes a p-type semiconductor substrate, a semiconductor element provided on the p-type semiconductor substrate, and a high-impedance range provided in the p-type semiconductor substrate. In the high-impedance range, the hydrogen density is in the range of 2 × 10 ¹⁵ cm ^-3 or more and 2 × 10 ¹⁷ cm ^-3 or less, and the impedance ratio is higher than that of the p-type semiconductor substrate. However, any combination of the above-described constituent elements or the constituent elements or expressions of the present invention may be replaced by a method, an apparatus, a system, etc., and is also effective as an aspect of the present invention. [Effect of the Invention] According to the present invention, a high-impedance range capable of withstanding heat treatment of 200 ° C or more can be formed.

[0011] Hereinafter, the mode for carrying out the invention will be described in detail. However, the configurations described below are illustrative and are not intended to limit the scope of the invention. In the description of the drawings, the same components are denoted by the same reference numerals, and the description thereof will be omitted as appropriate. In the following description, the thickness or size of the semiconductor substrate or other layers is a convenient description for the respective cross-sectional views, and is not necessarily the actual size or ratio. 1 is a cross-sectional view schematically showing a structure of a semiconductor device 10 according to an embodiment. The semiconductor device 10 is an integrated circuit (IC) of a system LSI or a single wafer system. The semiconductor device 10 includes a semiconductor substrate 12 and a wiring layer 18. [0013] The semiconductor substrate 12 is a semiconductor substrate having a low-impedance semiconductor substrate having an impedance of 100 Ω·cm or less and an impedance ratio of about 1 to 100 Ω·cm. The semiconductor substrate 12 is, for example, a p-type germanium (Si) wafer produced by a Czochralski (CZ) method. The wafer produced by the CZ method is low in impedance and low in cost compared with a high-impedance wafer produced by a floating zone melting (FZ) method or the like. In one embodiment, the semiconductor substrate 12 has an impedance ratio of 4 Ω·cm and a p-type carrier concentration of 3.4×10 ¹⁵ cm ⁻³ . [0014] The first element range 22 and the second element range 24 are provided on the main surface 14 of the semiconductor substrate 12. For example, the first semiconductor element 26 for the digital circuit is provided for the first element range 22, and the second semiconductor element 28 for the analog circuit is provided for the second element range 24. The first semiconductor element 26 and the second semiconductor element 28 are, for example, a transistor or a diode. Each of the first element range 22 and the second element range 24 is provided with an impurity diffusion layer for forming a well type range, a source/drain range, and a contact range of the semiconductor element. [0015] In the present specification, a direction orthogonal to the principal surface 14 of the semiconductor substrate 12 is referred to as an up-and-down direction or a depth direction. Further, in the inside of the semiconductor substrate 12, a direction in which the direction toward the main surface 14 is referred to as an upper direction or an upper side, and a direction toward the back surface 16 opposite to the main surface 14 is referred to as a lower direction or a lower side. In addition, there is a direction parallel to the main surface 14, which is referred to as a horizontal direction or a horizontal direction. [0016] A high impedance range 30 is provided for the internal structure of the semiconductor substrate 12. The high impedance range 30-system impedance ratio is higher than the body portion of the semiconductor substrate 12. The high-impedance range 30 has an impedance ratio of 100 Ω·cm or more, and has an impedance ratio of 500 Ω·cm or more, and is preferably 1 kΩ·cm or more. The high impedance range 30 includes: a recess type high impedance range 32 and a planar high impedance range 34. [0017] The groove-type high-impedance range 32 is provided in a separation range 20 between the first element range 22 and the second element range 24, and has a depth from the main surface 14 of the semiconductor substrate 12 toward the back surface 16 Formed. The depth of the groove type high impedance range 32 is 20 μm or more, and is preferably about 50 μm to 200 μm. The groove-type high-impedance range 32 is formed to reach a position deeper than the impurity diffusion layer formed in the first element range 22 or the second element range 24. The groove type high impedance range 32 is, for example, a function of blocking the interference of the analog circuit toward the analog circuit and improving the characteristics of the analog circuit. [0018] The planar high impedance range 34 is in the second element range 24 and extends in the horizontal direction. The planar high-impedance range 34 is provided from the separation range 20, extends over the second element range 24, and extends in the horizontal direction, and is formed to have a high impedance range continuous with the groove-type high-impedance range 32. The planar high impedance range 34 is formed directly below the analog circuit and contributes to the enhancement of the characteristics of the analog circuit. [0019] In the illustrated example, both the groove type high impedance range 32 and the planar high impedance range 34 are formed inside the semiconductor substrate 12, but in the modified example, only the groove type high impedance is provided. One of the range 32 and the planar high impedance range 34 is also possible. [0020] The high impedance range 30 is formed by irradiating hydrogen (H) ions to the main portion of the semiconductor substrate 12 of the low-resistance substrate. When ionizing the wafer, the ions reach the depth of the acceleration energy of the corresponding ions. At this time, in the vicinity of the range including the arrival, lattice defects are formed, and the regularity (periodicity) of the crystal becomes a state of confusion. In such a range of lattice defects, the carrier (electrons or holes) is easily scattered and hinders the movement of the carrier. As a result, in the range in which localized lattice defects are generated by ion irradiation, the impedance ratio is increased before the irradiation. [0021] The position or range in the depth direction in which the impedance ratio is increased by ion irradiation can be adjusted by appropriately selecting the acceleration energy or the irradiation amount of the ion irradiation. For example, by adjusting the acceleration energy of the ions when the ions are irradiated, the depth position at which the high impedance range is formed can be adjusted. Further, the acceleration energy irradiated by the selected ions can be adjusted to form a depth position in the high impedance range, a range in the depth direction (half width), or a diffusion width in the lateral direction. Further, by performing the ion irradiation for a plurality of times while changing the acceleration energy, a thicker high impedance range can be formed throughout the depth direction. [0022] In the present embodiment, hydrogen (H) ions are irradiated with an acceleration energy of 1 MeV or more and 100 MeV or less. For example, a monovalent hydrogen ion ( ¹ H ⁺ ) is irradiated with an acceleration energy of 4 MeV, 8 MeV, and 17 MeV. As a means for irradiating the ion beam of such an acceleration energy, a device of a cyclotron method or a Van de Graaff method is used. When such an irradiation condition is used, ions can be brought from the vicinity of the main surface 14 of the semiconductor substrate 12 to a position having a depth of 100 μm or more in the germanium wafer. [0023] The impedance ratio in the high impedance range formed by ion irradiation depends on the density (defect density) of the generated lattice defects. According to the findings of the present inventors, it has been found that if the defect density is 1 × 10 ¹⁷ cm ^-3 or more, an impedance ratio of 1 kΩ·cm or more can be optimally obtained. When the acceleration energy of the irradiation density is 4 MeV to 17 MeV, the irradiation amount (amount) of hydrogen ions can be made 1×10 ¹³ cm ⁻² or more. [0024] The high impedance range is formed by doing so, and it is understood that the impedance ratio is lowered when heat treatment is applied. According to the findings of the inventors, when the semiconductor substrate 12 after ion irradiation is heated to 200 ° C or higher, the decrease in the impedance ratio is seen, and when the semiconductor substrate 12 is heated to 300 ° C or more or 400 ° C or more, the resistivity is lowered. Then it drops significantly. This is considered to be because the loss of the lattice defect and the decrease in the defect density are caused by the heat treatment. Accordingly, in the case where a high-impedance range is formed by ion irradiation, it may be preferable to add a heat treatment of 200 ° C or more in a subsequent process. [0025] On the other hand, in order to position the high-impedance range 30 at a position like the target separation range 20 or the second element range 24, before the wafer is cut, that is, before the semiconductor processing is performed, Ion irradiation must be performed. In the post-engineering, wafer bonding or wire bonding is performed, which is called heat treatment of resin sealing, and in these processes, the semiconductor substrate 12 can be heated to a temperature of about 200 ° C to 300 ° C. For this reason, the impedance ratio in the high impedance range is lowered by the heat treatment in the subsequent process, and the desired impedance ratio (for example, 500 Ω·cm or more) cannot be maintained. Therefore, in the present embodiment, the hydrogen-activated person who is driven into the semiconductor substrate 12 by ion irradiation by the heat treatment can maintain the impedance ratio in the high impedance range even after the heat treatment. When the hydrogen is activated by the heat treatment, the concentration of the n-type carrier increases due to the donorization, and the majority of the carrier (p-type carrier) of the p-type semiconductor substrate 12 is neutralized, and the electrical conductivity is lowered. For example, by the activation of hydrogen, the n-type carrier concentration which is the same as the p-type carrier concentration of the semiconductor substrate 12 can be obtained, and the semiconductor substrate 12 can be made neutralized to increase the resistivity. 2 is a graph showing an example of a change in impedance ratio by cerium (He) ion irradiation and heat treatment according to a comparative example. In the comparative example, not hydrogen ions ( ¹ H ⁺ ) but strontium ions ( ³ He ²⁺ ) were used. The acceleration energy system was 23 MeV, and the amount was 1.0 × 10 ¹³ cm ^-2 , and the irradiation target was a p-type ruthenium substrate of about 4 Ω·cm. 2 is a graph showing the impedance ratio distribution in the depth direction of the substrate after ion irradiation (before heat treatment) and after heat treatment (200 ° C, 250 ° C, 300 ° C) before ion irradiation. As shown in the figure, a high impedance range of about 1 to 2 kΩ·cm can be formed up to a depth of about 60 μm before heat treatment, and a high impedance range of a slightly similar impedance ratio distribution can be maintained after heat treatment at 200 °C. However, in the heat treatment at 250 ° C, the impedance ratio in the high-impedance range is less than 1 kΩ·cm, and in part, it is less than 500 Ω·cm, and in the heat treatment after 300 ° C, the impedance ratio in the high-impedance range becomes insufficient. 100Ω・cm. In the case where ion irradiation is performed using ruthenium as described above, it is understood that the impedance ratio in the high impedance range is lowered by heat treatment exceeding 200 ° C, and the impedance ratio is remarkably lowered by heat treatment at 300 ° C or higher. 3 is a graph showing an example of changes in impedance ratios by hydrogen (H) ion irradiation and heat treatment according to the relevant examples. In the present embodiment, hydrogen ions ( ¹ H ⁺ ) were irradiated, the acceleration energy system was 8 MeV, and the amount was 1.0 × 10 ¹⁴ cm ^-2 , and the irradiation target was a p-type germanium substrate of about 4 Ω·cm. Fig. 3 is a graph showing the impedance ratio distribution in the depth direction of the substrate after ion irradiation (before heat treatment) and after heat treatment (250 °C, 400 °C) before ion irradiation. As shown in the figure, a high impedance range of 1 kΩ·cm or more can be formed up to a depth of about 110 μm before heat treatment, and a high impedance range of a slightly similar impedance ratio distribution can be maintained after heat treatment at 250 °C. In addition, after heat treatment at 400 ° C, a high impedance range of 1 kΩ·cm or more can be maintained at a depth of 10 μm to 80 μm. In the case where hydrogen ions are used, even when heat treatment at 200 ° C or heat treatment at 300 ° C or higher is applied, a high impedance range of 500 Ω·cm or more, preferably 1 kΩ·cm or more can be maintained. 4 is a graph showing an example of changes in impedance ratios by hydrogen (H) ion irradiation and heat treatment according to another embodiment. In this embodiment, similarly to FIG. 3 hydrogen ion irradiation ⁽¹ H ^+), 8 MeV acceleration energy system, the object is irradiated lines of about 4Ω · cm p-type silicon substrate. This embodiment uses a different amount from that of Fig. 3, and is a higher amount of 2.6 × 10 ^-14 cm ^-2 than the above embodiment. 4 is a graph showing the impedance ratio distribution in the depth direction of the substrate after ion irradiation (before heat treatment) and after heat treatment (200 ° C, 300 ° C, 400 ° C) before ion irradiation. As shown in the figure, a high impedance range of 1 kΩ·cm or more can be formed up to a depth of about 45 μm before heat treatment, and a high impedance range of a slightly similar impedance ratio distribution can be maintained after heat treatment at 200 °C. However, in the heat treatment at 300 ° C, the resistivity at a depth of 10 to 30 μm is less than 1 kΩ·cm, and after heat treatment at 400 ° C, it is less than 100 Ω·cm. This is because the reason is that when the amount of hydrogen ions is increased, hydrogen is excessively applied, and the conductivity type is inverted from p-type to n-type, and the impedance is increased by the concentration of the n-type carrier which becomes a majority of carriers. The rate is down. [0030] From the above comparative examples and examples, in order to maintain a high resistivity (500 Ω·cm or more) after heat treatment exceeding 200 ° C, it is necessary to appropriately control the amount of hydrogen ions and heat treatment. Temperature. [0031] FIG. 5 is a graph showing the activation rate of hydrogen by heat treatment, and shows the relationship between temperature and activation rate. As shown in the figure, the activation rate of hydrogen in the range of 200 ° C to 400 ° C is low, and the increase in the activation rate via the temperature rise is also slow. On the other hand, when it exceeds 400 ° C, the rate of increase in the activation rate via the temperature rise becomes large, and the value of the activation rate also exceeds 10%. In the heat treatment using a range of 200° C. to 400° C. which is a gentle increase in the activation rate by the temperature increase, even if there is an individual difference in the temperature of the heat treatment in the subsequent work, the treatment can be suppressed. Significant changes in the impedance ratio of different temperatures. 6 is a graph schematically showing changes in carrier concentration via heat treatment, and for different three hydrogen densities, the value of the n-type carrier concentration which is subjected to physicalization by heat treatment is schematically shown. The A system has a hydrogen density of 5 × 10 ¹⁶ cm ^-3 and corresponds to the embodiment of Fig. 3 (energy: 8 MeV, amount: 1.0 × 10 ¹⁴ cm ^-2 ). The B system has a hydrogen density of 1.3 × 10 ¹⁷ cm ^-3 and corresponds to the embodiment of Fig. 4 (energy: 8 MeV, amount: 2.6 × 10 ¹⁴ cm ^-2 ). The hydrogen density of the C system is 5 × 10 ¹⁵ cm ^-3 , and the hydrogen density of the D system is 2.5 × 10 ¹⁶ cm ^-3 . However, the dotted line in the graph shows the p-type carrier concentration in the semiconductor substrate, which is 3.4 × 10 ¹⁵ cm ^-3 . In the case of A, the concentration of the n-type carrier becomes about 1.0×10 ¹⁵ cm ⁻³ at 200° C., and at the level of 330° C., it is the same as the concentration of the p-type carrier of the substrate of 3.4×10 ¹⁵ cm ^{−3 .} The degree is about 6.0 × 10 ¹⁵ cm ^-3 at 400 °C. As a result, the decrease in the resistivity through the recovery of the lattice defect becomes a significant range of 250 ° C to 400 ° C, and the p-type carrier concentration and the n-type carrier concentration are the same, and the substrate can be neutralized with high impedance. Rate. As a result, as shown in FIG. 3, even if heat treatment is applied at 200 ° C to 400 ° C, high impedance of 1 kΩ·cm or more can be maintained. [0034] In the case of B, the concentration of the n-type carrier is about 2.6×10 ¹⁵ cm ⁻³ at 200° C., and the concentration of the p-type carrier of the substrate is 3.4×10 ¹⁵ cm ⁻³ at the level of 230° C. The degree is about 6.8 × 10 ¹⁵ cm ^-3 which is twice the concentration of the p-type carrier of the substrate, and is 1.0 × 10 ¹⁶ cm ^-3 or more at 350 °C or higher. As a result, as shown in FIG. 4, when the heat treatment at 300 ° C or higher is performed, the impedance ratio is lowered by the n-type inversion of the substrate, and when the heat treatment is performed at 400 ° C, the impedance ratio of the substrate is further lowered. [0035] In the case of C, the hydrogen density is 0.1 times that of A, and the carrier concentration due to the hydrogenation of the hydrogen is reduced, and even if a heat treatment of 400 ° C or more is added, the p-type carrier of the substrate is not obtained. Concentration (3.4 × 10 ¹⁵ cm ^-3 ). As a result, it is considered that even if heat treatment is applied at 200 ° C to 400 ° C, the neutralization of the substrate is not generated, and only the decrease in the resistivity due to the decrease in the defect density occurs. In the case of D, the hydrogen density is 0.5 times that of A, and even if the heat treatment at 200 ° C to 400 ° C is added, the p-type carrier concentration of the substrate (3.4 × 10 ¹⁵ cm ^-3 ) is not obtained, and it is considered that The substrate is neutralized, and only a decrease in the impedance ratio due to the reduction in defect density occurs. 7 is a graph showing an example of the relationship between the hydrogen density and the change in the resistivity through heat treatment, and shows the change in the impedance ratio for the conditions A, B, C, and D set in FIG. 6. As shown in the figure, in the case of A (hydrogen density: 5 × 10 ¹⁶ cm ^-3 ), it is possible to maintain a high resistance of 1 kΩ·cm or more in the range of 200 ° C to 400 ° C. In the case of B (hydrogen density: 1.3 × 10 ¹⁷ cm ^-3 ), a high impedance of 500 Ω·cm or more can be maintained in the range of 200 ° C to 300 ° C. However, at 350 ° C or higher, the impedance ratio becomes 200 Ω·cm. the following. In the case of C (hydrogen density: 5 × 10 ¹⁵ cm ^-3 ), high resistance of 1 kΩ·cm or more can be maintained in the heat treatment at 200 ° C, but when the heat treatment exceeds 200 ° C, the impedance ratio is remarkably lowered, and at 250 After heat treatment at a temperature above °C, it is 10 Ω·cm or less. This is considered to be due to the fact that the hydrogen density is small and the concentration of the n-type carrier which is neutralized is insufficient. In the case of D (hydrogen density: 2.5 × 10 ¹⁶ cm ^-3 ), the high impedance of 500 Ω·cm or more can be maintained in the range of 200 ° C to 230 ° C. However, the impedance ratio is 200 Ω at 250 ° C or higher. Below cm. From the above studies, it is necessary to achieve an n-type carrier concentration which is the same as the p-type carrier concentration of the semiconductor substrate 12 in a temperature range of 200 ° C to 400 ° C even after heat treatment. The activation rate of hydrogen by heat treatment at 200 ° C to 400 ° C is about 2% to 10%, and the hydrogen density of 10 to 50 times the p-type carrier concentration of the semiconductor substrate 12 can be achieved. In general, the p-type carrier concentration of a low-impedance (1 to 100 Ω·cm) p-type germanium substrate is from 10 ¹⁴ to 10 ¹⁶ cm ^-3 , for example, 5 × 10 ¹⁵ cm ^-3 or more and 2 × can be realized. The hydrogen density of 10 ^-17 cm ^-3 or less can be used. For example, when the concentration of the p-type carrier is 3.4 × 10 ¹⁵ cm ^-3 , the hydrogen density of 3.4 × 10 ¹⁶ cm ^-3 or more and 1.7 × 10 ^-17 cm ^-3 or less is preferable. [0038] However, when at least a part of the conductivity type of the high-impedance range 30 is inverted to the n-type, the pn junction is formed in the high-impedance range, which affects the operation of the circuit elements formed on the semiconductor substrate 12. Hey. In order to suppress such an influence, the concentration of the n-type carrier activated by hydrogen may not exceed the p-type carrier concentration of the semiconductor substrate 12, and the value of the hydrogen density may be controlled. That is, the conductivity type of the high-impedance range 30 is such that the p-type ground is maintained, and the hydrogen density and the heat treatment temperature can be controlled. 8 is a graph showing an example of the relationship between the amount of hydrogen ion irradiation and the hydrogen density, and is shown for the case where the acceleration energy of hydrogen ions is 4 MeV, 8 MeV, and 17 MeV. As shown, the amount of hydrogen ions is proportional to the hydrogen density after irradiation. In addition, the lower the irradiation energy, the higher the hydrogen density obtained. When the acceleration energy is low, the range of the depth direction in which the hydrogen ions are implanted is limited, and the amount of hydrogen injection per unit area is increased. From the graph, in order to achieve a hydrogen density of 5 × 10 ¹⁵ cm ^-3 or more and 2 × 10 ^-17 cm ^-3 or less, for a case of 4 MeV, for example, as 1 × 10 ^-13 cm ^-2 or more and 2 × 10 ^-14 cm ^-2 or less, and in the case of 8 MeV, as 1 × 10 ^-13 cm ^-2 or more, 4 × 10 ^-14 cm ^-2 or less, and 17 MeV, as 3.6 × 10 ^-13 cm ^-2 or more and 1 × 10 ^-15 Cm ^-2 or less. However, when ion irradiation is performed in an amount of such an amount, a defect density of 1 × 10 ¹⁷ cm ^-3 or more can be obtained, and in a state before heat treatment, a high resistivity of 500 Ω·cm or more can be achieved. . [0040] Next, a method of manufacturing the semiconductor device 10 of the present embodiment will be described. FIG. 9 is a flow chart showing a method of manufacturing the semiconductor device 10 in a schematic manner. First, a device is formed on the p-type semiconductor substrate 12 (S10) through various processes, and a wiring layer is formed on the semiconductor substrate 12, and a protective film for protecting the formed element or wiring is formed (S14). The engineering of S10~S14 is a project called "pre-engineering" in semiconductor processing, and can perform high-temperature processing of 400 °C or higher, such as thermal oxidation, thermal diffusion, CVD, and annealing. Next, hydrogen ions are irradiated onto the semiconductor substrate 12 to form a high-impedance range 30 (S16), and the back surface of the semiconductor substrate 12 is polished (S18). The engineering of S16 and S18 is a so-called "intermediate project" or a project called "PPP (Post Passive Process)". [0041] Next, the process (S20) after the heat treatment is performed is completed as a semiconductor integrated circuit. In the post-S20 engineering, for example, the process of dicing a wafer for dicing, bonding the diced wafer to the mounting substrate, and bonding the mounting substrate to the wafer by wire bonding to The process of sealing the wafer with resin, and the like. For example, in the wafer bonding process, the wire bonding process, and the resin sealing process, heat treatment is performed at a temperature of about 200 ° C to 300 ° C. In one embodiment, the maximum temperature of the heat treatment is about 260 ° C. However, an annealing treatment for separately heating the semiconductor device 10 in conjunction with the bonding or sealing process may be performed. In the annealing treatment, when the high-impedance range 30 is heated at a specific temperature of 200 ° C or more and 400 ° C or less, the impedance ratio of the high-impedance range 30 may be stabilized. This annealing treatment is sufficient for a short period of time of 10 minutes or less, and may be 5 minutes or less, 1 minute or less, or 30 seconds or less. [0042] The present invention has been described above based on the embodiments. The present invention is not limited to the above-described embodiments, and various design changes can be made. However, it is understood by those skilled in the art that various modifications can be made, or such modifications are also included in the scope of the present invention. [0043] In the above embodiment, it is assumed that only the hydrogen ions are irradiated to form the high impedance range 30. In the modified example, a high impedance range may be formed by combining ions other than hydrogen. For example, the hydrogen density in the above numerical range can be achieved by hydrogen ion irradiation, and the defect density of the above numerical value can be realized by irradiating an ion species other than hydrogen. In a certain modification, when the irradiation of the hydrogen ions and the cerium ions is combined, even if heat treatment at 200 ° C or higher is performed, a high impedance range capable of maintaining high impedance (500 Ω·cm or more) can be formed.

[0044]

10‧‧‧Semiconductor device

12‧‧‧Semiconductor substrate

14‧‧‧Main face

16‧‧‧Back

18‧‧‧Wiring layer

20‧‧‧Separation range

22‧‧‧1st component range

24‧‧‧2nd component range

26‧‧‧1st semiconductor component

28‧‧‧2nd semiconductor component

30‧‧‧High impedance range

32‧‧‧ Groove type high impedance range

34‧‧‧Flat type high impedance range

1 is a cross-sectional view schematically showing a structure of a semiconductor device according to an embodiment. Fig. 2 is a graph showing an example of changes in impedance ratio by cerium (He) ion irradiation and heat treatment according to a comparative example. Fig. 3 is a graph showing an example of changes in impedance ratio by hydrogen (H) ion irradiation and heat treatment according to the relevant examples. Fig. 4 is a graph showing an example of changes in impedance ratios by hydrogen (H) ion irradiation and heat treatment according to another embodiment. Fig. 5 is a graph showing the activation rate of hydrogen via heat treatment. Fig. 6 is a graph schematically showing changes in carrier concentration via heat treatment. Fig. 7 is a graph showing an example of the relationship between the hydrogen density and the change in the resistivity through heat treatment. Fig. 8 is a graph showing an example of the relationship between the amount of hydrogen ion irradiation and the hydrogen density. 9 is a flow chart showing a method of manufacturing a semiconductor device in a schematic manner.

Claims (9)

A method of manufacturing a semiconductor device, comprising: irradiating hydrogen (H) ions on a p-type semiconductor substrate on which a semiconductor element is formed, and having a hydrogen density of 5 × 10 ¹⁵ cm ^-3 or more and 2 × 10 ¹⁷ cm ^-3 or less In the range, the impedance ratio is higher than the high-impedance range of the p-type semiconductor substrate before ion irradiation, and the p-type semiconductor substrate having the high-impedance range formed by heating at a temperature of 200 ° C or higher and 400 ° C or lower. The method of manufacturing a semiconductor device according to the first aspect of the invention, wherein the high-impedance range is formed by forming a defect density of 1 × 10 ¹⁷ cm ^-3 or more. The method of manufacturing a semiconductor device according to the first or second aspect of the invention, wherein the p-type semiconductor substrate having the high-impedance range is heated at a temperature of 200 ° C or more and 300 ° C or less. The method of manufacturing a semiconductor device according to the first or second aspect of the invention, wherein the high-impedance range is 4 MeV or more and 17 MeV or less, and the quantity is 2 × 10 ¹³ cm ^-2 or more and 2 × 10 ¹⁴ A hydrogen ion of cm ^-2 or less is irradiated and formed. The method of manufacturing a semiconductor device according to the first or second aspect of the invention, wherein the heating time is 10 minutes or shorter. The method of manufacturing a semiconductor device according to the first or second aspect of the invention, wherein the impedance ratio of the p-type semiconductor substrate before the ion irradiation is 100 Ωcm or less, and the impedance ratio of the high-impedance range after the heating is 500Ωcm or more. The method of manufacturing a semiconductor device according to the first aspect of the invention, wherein the high-impedance range is such that the hydrogen density is 10 times or more and 50 times or less the carrier concentration of the p-type semiconductor substrate before the ion irradiation. The land is formed. The method of manufacturing a semiconductor device according to the first or second aspect of the invention, wherein the high-impedance range is such that the conductive type after heating is p-type. A semiconductor device comprising: a p-type semiconductor substrate; and a semiconductor element provided on the p-type semiconductor substrate; and a high-impedance range provided in the p-type semiconductor substrate; wherein the high-impedance range is hydrogen density In the range of 5 × 10 ¹⁵ cm ^-3 or more and 2 × 10 ¹⁷ cm ^-3 or less, the impedance ratio is higher than that of the p-type semiconductor substrate.