TWI661463B - Heater power supply mechanism and platform temperature control method - Google Patents

Heater power supply mechanism and platform temperature control method Download PDF

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TWI661463B
TWI661463B TW104114658A TW104114658A TWI661463B TW I661463 B TWI661463 B TW I661463B TW 104114658 A TW104114658 A TW 104114658A TW 104114658 A TW104114658 A TW 104114658A TW I661463 B TWI661463 B TW I661463B
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heater
terminals
wiring
heaters
platform
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TW104114658A
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TW201608603A (en
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喜多川大
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Abstract

本發明之課題係對於平台溫度以各區域進行控制之際，對於區域構成進行可變控制。 The subject of the present invention is to control the structure of the area variably when the platform temperature is controlled in each area.

係提供一種加熱器供電機構，係將載置基板之平台以複數加熱器來區域化，而可對各區域進行溫度控制者；具有：複數組加熱器用端子，係以一組加熱器用端子為一區段，以區段單位來連接於該複數加熱器之中一者；加熱器配線；以及配線構造，係使用該加熱器配線將該複數組加熱器用端子之間之至少一者以區段單位來連繋。 Provides a heater power supply mechanism. The platform on which the substrate is placed is regionalized by a plurality of heaters, and the temperature can be controlled in each area. It has: a plurality of heater terminals. A section is connected to one of the plurality of heaters in section units; a heater wiring; and a wiring structure in which at least one of the plurality of heater terminals is used in the section unit using the heater wiring. To connect.

Description

加熱器供電機構及平台溫度控制方法 Heater power supply mechanism and platform temperature control method

本發明係關於一種加熱器供電機構及平台溫度控制方法。 The invention relates to a heater power supply mechanism and a platform temperature control method.

半導體晶圓(以下稱為「晶圓」)以蝕刻等進行微細加工之半導體製造裝置中，載置晶圓之平台的溫度會對於蝕刻速率等程序結果造成影響。是以，有人提議於平台內部埋設加熱器，將加熱器予以加熱來控制平台溫度。例如，專利文獻1中揭示了一種裝置，為了改善伴隨靜電夾頭之單元化所致表面溫度不均一性，乃藉由外部電阻使得靜電夾頭之發熱量均一化來控制靜電夾頭之溫度。 In a semiconductor manufacturing device in which a semiconductor wafer (hereinafter referred to as a "wafer") is micro-processed by etching or the like, the temperature of the stage on which the wafer is placed affects the program results such as the etching rate. Therefore, it has been proposed to embed a heater inside the platform and heat the heater to control the temperature of the platform. For example, Patent Document 1 discloses a device for controlling the temperature of the electrostatic chuck by using an external resistor to uniformize the amount of heat generated by the electrostatic chuck in order to improve the non-uniformity of the surface temperature caused by the unitization of the electrostatic chuck.

靜電夾頭之溫度控制，係於內部埋入複數加熱器，將平台按照各加熱器而區域化，以各區域來控制平台溫度亦即進行所謂「多區域控制」，則可提高平台上之晶圓溫度的面內均一性。 The temperature control of the electrostatic chuck is embedded with a plurality of heaters inside, and the platform is regionalized according to each heater. The temperature of the platform is controlled by each area, that is, the so-called "multi-zone control" can improve the crystal on the platform In-plane uniformity of circle temperature.

先前技術文獻 Prior art literature

專利文獻1 日本特開2003-51433號公報 Patent Document 1 JP 2003-51433

另一方面，所生成之電漿分布會隨著電漿處理裝置之特性、程序條件等而改變。是以，為了提高平台內之面內均一性，以因應於所生成之電漿分布來可變控制區域構成為佳。 On the other hand, the generated plasma distribution will change depending on the characteristics of plasma processing equipment, program conditions, and so on. Therefore, in order to improve the in-plane uniformity within the platform, it is better to control the composition of the area variably in accordance with the generated plasma distribution.

例如，當平台內側之電漿分布具均一性，而外側則容易變得不均一之情況，可藉由以內側區域寬廣、外側區域狹窄的方式控制區域構成(各區域之配置)以提高平台內之面內均一性。相反地，當平台外側之電漿分布具均 一性，而內側容易變得不均一之情況，則以外側區域寬廣、內側區域狹窄的方式來改變區域構成為佳。 For example, when the plasma distribution on the inside of the platform is uniform and the outside is likely to become uneven, the area configuration (configuration of each area) can be controlled to increase the inside of the platform by widening the inside area and narrowing the outside area. In-plane uniformity. Conversely, when the plasma distribution on the outside of the platform is uniform If the inner side tends to become uneven, it is better to change the region configuration such that the outer region is wide and the inner region is narrow.

但是，以往為了改變區域構成，必須改變埋入於靜電夾頭內部之複數加熱器的配置。從而，必須重新製作在因應於所希望之區域構成的位置處形成了複數加熱器之陶瓷燒結體。 However, conventionally, in order to change the area structure, it is necessary to change the arrangement of a plurality of heaters embedded in the electrostatic chuck. Therefore, a ceramic sintered body in which a plurality of heaters are formed at positions corresponding to a desired area configuration must be newly produced.

針對上述課題，一觀點之目的在於：對於依照各區域來控制平台溫度之際的區域構成進行可變控制。 In view of the above-mentioned problems, an object of the viewpoint is to perform variable control on the area configuration when the platform temperature is controlled in accordance with each area.

為了解決上述課題，依據一態樣係提供一種加熱器供電機構，係將載置基板之平台以複數加熱器來區域化，而可對各區域進行溫度控制者；具有：複數組加熱器用端子，係以一組加熱器用端子為一區段，以區段單位來連接於該複數加熱器之中一者；加熱器配線；以及配線構造，係使用該加熱器配線將該複數組加熱器用端子之間之至少一者以區段單位來連繋。 In order to solve the above-mentioned problems, a heater power supply mechanism is provided according to one aspect. The platform on which the substrate is placed is regionalized by a plurality of heaters, and the temperature can be controlled in each area. A group of heater terminals is used as a section, and one of the plurality of heaters is connected in sections; a heater wiring; and a wiring structure, which uses the heater wiring to connect the plurality of heater terminals. At least one of them is connected in a section unit.

依據一態樣，可對於依照各區域來控制平台溫度之際的區域構成進行可變控制。 According to one aspect, the area configuration when the platform temperature is controlled in accordance with each area can be variably controlled.

1‧‧‧電漿處理裝置 1‧‧‧ Plasma treatment device

10‧‧‧腔室 10‧‧‧ chamber

12‧‧‧平台 12‧‧‧ platform

13‧‧‧保持板 13‧‧‧ holding plate

28‧‧‧排氣裝置 28‧‧‧Exhaust

38‧‧‧淋灑頭 38‧‧‧ shower head

40‧‧‧靜電夾頭 40‧‧‧Static chuck

44‧‧‧交流電源 44‧‧‧AC Power

75‧‧‧加熱器 75‧‧‧heater

77‧‧‧加熱器濾波器 77‧‧‧heater filter

91‧‧‧供電部蓋體 91‧‧‧ cover of power supply department

93‧‧‧配線構造 93‧‧‧Wiring Structure

93a‧‧‧C狀構件 93a‧‧‧C-shaped member

100‧‧‧加熱器供電機構 100‧‧‧ heater power supply mechanism

S1~S8‧‧‧加熱器用端子 S1 ~ S8‧‧‧heater terminal

L‧‧‧加熱器配線 L‧‧‧ heater wiring

圖1係一實施形態之電漿處理裝置之縱截面圖。 FIG. 1 is a longitudinal sectional view of a plasma processing apparatus according to an embodiment.

圖2係顯示一實施形態之加熱器供電機構一例之圖。 Fig. 2 is a diagram showing an example of a heater power supply mechanism according to an embodiment.

圖3係顯示一實施形態之加熱器用端子以及供電部蓋體構造一例之圖。 FIG. 3 is a diagram showing an example of a heater terminal and a cover structure of a power supply unit according to an embodiment.

圖4係顯示一實施形態之加熱器供電機構之配線構造之詳細。 FIG. 4 shows the details of the wiring structure of the heater power supply mechanism according to an embodiment.

圖5係顯示一實施形態之區域構成之適中化一例之圖。 FIG. 5 is a diagram showing an example of a moderation of a region configuration in an embodiment.

圖6係顯示一實施形態之平台溫度控制方法一例之流程圖。 FIG. 6 is a flowchart showing an example of a platform temperature control method according to an embodiment.

圖7係顯示一實施形態之各裝置之區域構成一例之表。 FIG. 7 is a table showing an example of a region configuration of each device according to an embodiment.

以下，針對實施本發明之形態參見圖式來說明。此外，本說明書以及圖式中，針對實質相同構成係賦予相同符號而省略重複說明。 Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In this specification and the drawings, the same reference numerals are assigned to substantially the same components, and redundant descriptions are omitted.

〔電漿處理裝置之全體構成〕 [Overall Structure of Plasma Processing Device]

首先，針對本發明之一實施形態之電漿處理裝置1之全體構成，參見圖1來說明。圖1係顯示本發明之一實施形態之電漿處理裝置之縱截面。本實施形態中，在電漿處理裝置1之一例方面舉出了電容耦合型電漿蝕刻裝置。電漿處理裝置1具有例如表面經耐酸鋁處理(陽極氧化處理)過的鋁所構成之圓筒形腔室(處理容器)10。腔室10為接地，於內部處理室對晶圓W進行蝕刻等電漿處理。 First, the overall configuration of a plasma processing apparatus 1 according to an embodiment of the present invention will be described with reference to FIG. 1. FIG. 1 is a longitudinal section showing a plasma processing apparatus according to an embodiment of the present invention. In this embodiment, a capacitive coupling type plasma etching apparatus is mentioned as an example of the plasma processing apparatus 1. The plasma processing apparatus 1 has, for example, a cylindrical chamber (processing container) 10 made of aluminum whose surface is treated with an acid-resistant aluminum (anodized). The chamber 10 is grounded, and plasma processing such as etching is performed on the wafer W in the internal processing chamber.

於腔室10之內部設有載置晶圓W之平台12。平台12具有靜電夾頭40與保持靜電夾頭40之保持板13。保持板13係由樹脂等絕緣性構件所構成。於保持板13之下面設有加熱器配線等配線構造93。保持板13係經由絕緣性之保持部14而被支撐部15所支撐著。藉此，平台固定於腔室10之內部。 A stage 12 on which the wafer W is placed is provided inside the chamber 10. The platform 12 includes an electrostatic chuck 40 and a holding plate 13 that holds the electrostatic chuck 40. The holding plate 13 is made of an insulating member such as resin. A wiring structure 93 such as a heater wiring is provided below the holding plate 13. The holding plate 13 is supported by the supporting portion 15 via an insulating holding portion 14. Thereby, the platform is fixed inside the chamber 10.

於平台12之上面設有以靜電吸附力來保持晶圓W之靜電夾頭40。靜電夾頭40乃將由導電膜所構成之電極40a夾入一對絕緣層40b(或是絕緣片)之間者，直流電壓源42經由開關43而連接於電極40a。靜電夾頭40係藉由來自直流電壓源42之電壓而以庫倫力將晶圓W吸附保持於靜電夾頭上。於靜電夾頭40之周緣部配置有例如由矽、石英所構成之聚焦環18，以提高蝕刻之面內均一性。 An electrostatic chuck 40 for holding the wafer W with an electrostatic attraction force is provided on the platform 12. The electrostatic chuck 40 sandwiches an electrode 40 a made of a conductive film between a pair of insulating layers 40 b (or insulating sheets), and a DC voltage source 42 is connected to the electrode 40 a via a switch 43. The electrostatic chuck 40 adsorbs and holds the wafer W on the electrostatic chuck with a Coulomb force by a voltage from the DC voltage source 42. A focus ring 18 made of, for example, silicon or quartz is disposed on a peripheral edge portion of the electrostatic chuck 40 to improve in-plane uniformity of etching.

用以激發電漿之第1高頻電源31係經由匹配器33而連接於平台12，另用以將離子拉引至晶圓W側之第2高頻電源32則經由匹配器34而連接於平台12。例如，第1高頻電源31係將適合在腔室10內生成電漿之頻率、例如60MHz之高頻電力施加於平台12。第2高頻電源32係將適合將電漿中離子拉引至平台12上之晶圓W的較低頻率、例如0.8MHz之高頻電力施加於平台12。如此一來平台12將載置晶圓W並發揮下部電極之機能。 The first high-frequency power source 31 for exciting the plasma is connected to the platform 12 via a matcher 33, and the second high-frequency power source 32 for drawing ions to the W side of the wafer is connected to the matcher 34 via Platform 12. For example, the first high-frequency power source 31 applies a high-frequency power at a frequency suitable for generating plasma in the chamber 10, for example, 60 MHz, to the platform 12. The second high-frequency power source 32 applies low-frequency power, such as 0.8 MHz, of high-frequency power suitable for drawing the ions in the plasma to the wafer W on the platform 12. In this way, the platform 12 will mount the wafer W and function as a lower electrode.

於靜電夾頭40中埋入有加熱器75a、75b、75c、75d、75e(以下也總稱為「加熱器75」)。加熱器75可取代埋入靜電夾頭40內而改為貼附於靜電夾頭40之內面。加熱器75之個數只要為複數即可，可為任意數量。 Heaters 75a, 75b, 75c, 75d, and 75e (hereinafter collectively referred to as "heaters 75") are embedded in the electrostatic chuck 40. The heater 75 may be embedded in the electrostatic chuck 40 instead of being buried in the electrostatic chuck 40. The number of the heaters 75 may be plural and may be any number.

加熱器75係經由配線構造93所形成的配線而和供電部蓋體構造76連接。供電部蓋體構造76係連接於加熱器濾波器77a、77b、77c、77d、77e、77f(以下也總稱為「加熱器濾波器77」)。加熱器濾波器77係由例如線圈所形成，藉由將第1高頻電源31以及第2高頻電源32所施加的高頻電力去除以保護交流電源44。 The heater 75 is connected to the power supply unit cover structure 76 via wiring formed by the wiring structure 93. The power supply unit cover structure 76 is connected to the heater filters 77a, 77b, 77c, 77d, 77e, and 77f (hereinafter also collectively referred to as "heater filters 77"). The heater filter 77 is formed of, for example, a coil, and protects the AC power source 44 by removing high-frequency power applied from the first high-frequency power source 31 and the second high-frequency power source 32.

此外，供電部蓋體構造76以及加熱器濾波器77基於說明之方便起見係配至於圖1所示位置處，但不限於此，也可以同心圓狀來配置加熱器濾波器77。藉由相關構成，加熱器75會經由供電部蓋體構造76以及加熱器濾波器77而連接於交流電源44。藉此，加熱器75從交流電源44被供給電流。針對以此方式對加熱器75進行供電之加熱器供電機構100之詳細將於後述。依據相關構成，平台12係以複數加熱器75來區域化，可針對平台12之各區域進行溫度控制。使用複數加熱器75對各區域進行溫度控制，則可提高平台12上之晶圓溫度的面內均一性。此外，平台12之溫度控制係基於來自控制部48之指令來進行。控制部48具有未圖示之CPU、ROM、RAM，依照於RAM等所記憶之配方所設定之順序或是記憶於表之數據來控制蝕刻處理、溫度控制處理。此外，控制部48之機能可使用軟體來動作而實現，也可使用硬體來動作而實現。 In addition, the power supply unit cover structure 76 and the heater filter 77 are arranged at positions shown in FIG. 1 for convenience of description, but the present invention is not limited to this, and the heater filters 77 may be arranged concentrically. With this configuration, the heater 75 is connected to the AC power source 44 via the power supply unit cover structure 76 and the heater filter 77. Thereby, the heater 75 is supplied with electric current from the AC power source 44. Details of the heater power supply mechanism 100 that supplies power to the heater 75 in this manner will be described later. According to the related structure, the platform 12 is regionalized by a plurality of heaters 75, and the temperature of each area of the platform 12 can be controlled. By using a plurality of heaters 75 to control the temperature of each region, the in-plane uniformity of the wafer temperature on the stage 12 can be improved. The temperature control of the platform 12 is performed based on a command from the control unit 48. The control unit 48 includes a CPU, ROM, and RAM (not shown), and controls the etching process and the temperature control process in accordance with a sequence set by a recipe stored in the RAM or the like or data stored in a table. The function of the control unit 48 may be implemented by using software to operate or may be implemented by using hardware.

於腔室10之天花板部，淋灑頭38係做為接地電位之上部電極而設置其該處。藉此，來自第1高頻電源31之高頻電力以電容方式施加於平台12與淋灑頭38之間。 On the ceiling portion of the chamber 10, a shower head 38 is provided as an upper electrode of the ground potential. Thereby, the high-frequency power from the first high-frequency power source 31 is applied between the platform 12 and the shower head 38 in a capacitive manner.

天花板部之淋灑頭38具有：具多數氣體通氣孔56a之電極板56、以及將電極板56以可裝卸方式加以支撐之電極支撐體58。氣體供給源62係經由氣體供給配管64而從氣體導入口60a對淋灑頭38內供給氣體。氣體係從多數氣體通氣孔56a導入腔室10內。於腔室10之周圍配置著以環狀或是同心圓狀延伸之磁石66，藉由磁力對於在上部電極以及下部電極間之電漿生成空間所生成之電漿進行控制。 The shower head 38 of the ceiling portion includes an electrode plate 56 having a large number of gas vent holes 56a, and an electrode support body 58 that supports the electrode plate 56 in a detachable manner. The gas supply source 62 supplies gas into the shower head 38 from the gas introduction port 60 a through the gas supply pipe 64. The gas system is introduced into the chamber 10 from most gas vent holes 56a. A magnet 66 extending in a ring shape or a concentric circle is arranged around the chamber 10, and the plasma generated in the plasma generation space between the upper electrode and the lower electrode is controlled by magnetic force.

於腔室10之側壁與支撐部15之間形成有排氣流路20。排氣流路20上安裝著環狀擋板22。於排氣流路20之底部設有排氣管26(形成排氣口24)，排氣管26則連接於排氣裝置28。排氣裝置28係由渦輪分子泵、乾式泵等真空泵 所構成，將腔室10內之處理空間減壓至既定真空度。於腔室10之側壁安裝著對於晶圓W之搬出入口進行開閉之搬送用閘閥30。 An exhaust flow path 20 is formed between the side wall of the chamber 10 and the support portion 15. An annular baffle 22 is attached to the exhaust flow path 20. An exhaust pipe 26 (an exhaust port 24 is formed) is provided at the bottom of the exhaust flow path 20, and the exhaust pipe 26 is connected to an exhaust device 28. The exhaust device 28 is a vacuum pump such as a turbo molecular pump and a dry pump. This structure decompresses the processing space in the chamber 10 to a predetermined vacuum degree. On the side wall of the chamber 10, a transfer gate valve 30 for opening and closing the loading / unloading entrance of the wafer W is attached.

於相關構成之電漿處理裝置1進行蝕刻等處理之際，首先，晶圓W在被保持於未圖示之搬送臂上的狀態下，從開口著的閘閥30搬入腔室10內。晶圓W係於靜電夾頭40之上方以未圖示之推動銷所保持，一旦推動銷下降則被載置於靜電夾頭40上。閘閥30係在搬入晶圓W後關閉。腔室10內之壓力係藉由排氣裝置28減壓至設定值。氣體從淋灑頭38以淋灑狀導入腔室10內。既定功率之高頻電力施加於平台12。此外，對靜電夾頭40之電極40a施加來自直流電壓源42之電壓，則晶圓W被靜電吸附於靜電夾頭40上。所導入之氣體以高頻電力來電離、解離而生成電漿，藉由電漿之作用來對晶圓W進行蝕刻等處理。 When the plasma processing apparatus 1 of the related structure performs processing such as etching, first, the wafer W is carried into the chamber 10 from the open gate valve 30 while being held on a transfer arm (not shown). The wafer W is held above the electrostatic chuck 40 by a push pin (not shown), and once the push pin is lowered, it is placed on the electrostatic chuck 40. The gate valve 30 is closed after the wafer W is carried in. The pressure in the chamber 10 is reduced to a set value by the exhaust device 28. The gas is introduced into the chamber 10 from the shower head 38 in a shower shape. High-frequency power of a predetermined power is applied to the platform 12. In addition, when a voltage from the DC voltage source 42 is applied to the electrode 40 a of the electrostatic chuck 40, the wafer W is electrostatically attracted to the electrostatic chuck 40. The introduced gas is ionized and dissociated with high-frequency power to generate a plasma, and the wafer W is subjected to processes such as etching by the action of the plasma.

電漿蝕刻結束後，晶圓W被保持於搬送臂上而搬出至腔室10之外部。藉由反覆此處理來連續地對晶圓W進行電漿處理。以上，針對本實施形態之電漿處理裝置1之全體構成做了說明。 After the plasma etching is completed, the wafer W is held on the transfer arm and is carried out of the chamber 10. The wafer W is continuously plasma-processed by repeating this process. The overall configuration of the plasma processing apparatus 1 according to this embodiment has been described above.

〔加熱器供電機構〕 [Heating power supply mechanism]

其次，針對本實施形態之加熱器供電機構100之構成，參見圖2來說明。圖2係顯示一實施形態之加熱器供電機構100之一例。圖2(a)係從上面側觀看加熱器供電機構100之立體圖，圖2(b)係從下面側觀看加熱器供電機構100之立體圖。 Next, the configuration of the heater power supply mechanism 100 according to this embodiment will be described with reference to FIG. 2. FIG. 2 shows an example of a heater power supply mechanism 100 according to an embodiment. FIG. 2 (a) is a perspective view of the heater power supply mechanism 100 viewed from the upper side, and FIG. 2 (b) is a perspective view of the heater power supply mechanism 100 viewed from the lower side.

加熱器供電機構100具有：複數組加熱器用端子S1~S8(以下也總稱為「加熱器用端子S」)、複數加熱器配線L、以及具有C狀構件93a之配線構造93。複數組加熱器用端子S1~S8係由導電性構件所構成，在C狀構件93a之上部隔離配置著。加熱器配線L係將加熱器用端子S間之至少一者加以連接。C狀構件93a係由樹脂所形成，設置於保持板13之下面。 The heater power supply mechanism 100 includes a plurality of heater terminals S1 to S8 (hereinafter also collectively referred to as "heater terminals S"), a plurality of heater wirings L, and a wiring structure 93 having a C-shaped member 93a. The terminals S1 to S8 for a plurality of heaters are made of a conductive member, and are arranged above the C-shaped member 93a. The heater wiring L connects at least one of the heater terminals S. The C-shaped member 93 a is made of resin and is provided below the holding plate 13.

於C狀構件93a之上面，如圖2(a)所示般，以二個端子為1組而配置8組的加熱器用端子S1~S8。C狀構件93a之上面成為配線構造93之第1層，加熱器配線L爬在上面2條溝槽中，將所希望之加熱器用端子S間做連結。藉此，在C狀構件93a之上面，8組加熱器用端子S1~S8當中的2組以上之加熱器用端子 S係以區段(segment)單位來並連。圖2(a)中，加熱器用端子S1~S4係以加熱器配線L來連接著。 On the upper surface of the C-shaped member 93a, as shown in FIG. 2 (a), eight groups of heater terminals S1 to S8 are arranged with two terminals as a group. The upper surface of the C-shaped member 93a becomes the first layer of the wiring structure 93. The heater wiring L climbs in the two upper grooves and connects the desired heater terminal S. Thereby, above the C-shaped member 93a, two or more heater terminals among the eight heater terminals S1 to S8 are used. S is connected in segments. In FIG. 2 (a), the heater terminals S1 to S4 are connected by a heater wiring L.

此處，所謂「區段」意指為了對一個加熱器75供給電流所必要之加熱器用端子之最小單位。此外，所謂「區域」意指當平台12以複數加熱器75進行溫度控制之際，控制在相同溫度帶之領域。 Here, the “segment” means a minimum unit of a heater terminal necessary for supplying a current to one heater 75. In addition, the "zone" means a zone controlled in the same temperature zone when the platform 12 is controlled by a plurality of heaters 75.

例如，所謂加熱器用端子S1、S2間以區段單位來連接，意指一組(二個)加熱器用端子S1之一者與一組(二個)加熱器用端子S2之一者做連接，而一組加熱器用端子S1之另一者與一組加熱器用端子S2之另一者做連接。藉此，連接於一組加熱器用端子S1之加熱器75與連接於一組加熱器用端子S2之加熱器75係做為同一區域而被控制在相同溫度帶。如此一來，本實施形態可藉由配線構造93來可變控制區域構成。 For example, the so-called heater terminals S1 and S2 are connected in units of sections, which means that one of a group (two) of heater terminals S1 is connected to one of a group (two) of heater terminals S2, and The other one of the heater terminal S1 is connected to the other of the heater terminal S2. Thereby, the heater 75 connected to a group of heater terminals S1 and the heater 75 connected to a group of heater terminals S2 are controlled in the same temperature zone as the same area. In this way, in this embodiment, the wiring structure 93 can be used to variably control the area configuration.

本實施形態之加熱器用端子S1~S8係以二個加熱器用端子做為一區段而設置8組，但加熱器用端子S之組數不限於此，只要為2組以上即可，可設置任意組。 The heater terminals S1 to S8 in this embodiment are provided with two groups of heater terminals as a section, but the number of groups of the heater terminals S is not limited to this, as long as it is two or more, it can be set arbitrarily. group.

圖3(a)係圖2(a)之A-A截面，顯示一區段之加熱器用端子S3及其附近之截面。二個加熱器用端子S3係和插口(jack)端子103嵌合，而嵌入於絕緣性構件之固定盒102。固定盒102係藉由螺絲104而固定於C狀構件93a。二個加熱器用端子S3之上部係貫通固定盒102而露出於固定盒102之上部，和埋設於靜電夾頭(ESC：Electrostatic Chuck)40之加熱器75連接。 Fig. 3 (a) is a cross section A-A of Fig. 2 (a), showing a section of the heater terminal S3 and its vicinity in a section. The two heater terminals S3 are fitted into a jack terminal 103 and are embedded in a fixing box 102 of an insulating member. The fixing box 102 is fixed to the C-shaped member 93a by a screw 104. The upper portion of the two heater terminals S3 penetrates the fixed box 102 and is exposed at the upper portion of the fixed box 102, and is connected to a heater 75 embedded in an electrostatic chuck (ESC: Electrostatic Chuck) 40.

如圖2(b)所示般，於C狀構件93a之下面，一組供電部蓋體91係隔離設置複數組。C狀構件93a之下面成為配線構造93之第2層，加熱器配線L爬在下面2條溝槽中，配置於上面而貫通C狀構件93a之加熱器用端子S之其中一端部與配置於下面之供電部蓋體91之一者係以區段單位做連接。藉此，因著爬在配線構造之第1層與第2層之加熱器配線L，加熱器用端子S1~S4得連接於供電部蓋體91。 As shown in FIG. 2 (b), under the C-shaped member 93a, a plurality of power supply part covers 91 are separated and provided with a plurality of arrays. The lower surface of the C-shaped member 93a becomes the second layer of the wiring structure 93. The heater wiring L climbs in the two lower grooves and is arranged on the upper side to penetrate one of the heater terminals S of the C-shaped member 93a and the lower portion. One of the power supply section covers 91 is connected in sections. This allows the heater terminals S1 to S4 to be connected to the power supply unit cover 91 due to the heater wiring L climbing on the first and second layers of the wiring structure.

圖2(a)中，加熱器用端子S1~S4係以加熱器配線L做連接，但利用加熱器配線L之加熱器用端子S間之連接只要8組加熱器用端子S1~S8間至少一者連接著即可。藉此，於C狀構件93a之上面，8組加熱器用端子S1~S8當中的2組以上之加熱器用端子S係以區段單位來並連。 In Figure 2 (a), the heater terminals S1 to S4 are connected by the heater wiring L. However, the connection between the heater terminals S using the heater wiring L is only required to connect at least one of the eight heater terminals S1 to S8. Just click it. Thereby, on the C-shaped member 93a, two or more sets of heater terminals S among the eight sets of heater terminals S1 to S8 are connected in parallel in sections.

本實施形態之配線構造93，一組加熱器用端子S係連接於一個加熱器75或是複數加熱器75。從而，若複數組加熱器用端子S藉由加熱器配線L來連接，則待經由該複數組加熱器用端子S而連接之所有的加熱器75將會構成被控制在相同溫度帶之同一區域。亦即，隨著加熱器配線L是否以區段單位來連接加熱器用端子間，並連之加熱器75將會改變，被控制在相同溫度帶之同一區域之構成會改變。從而，依據本實施形態之配線構造93，8組加熱器用端子S1~S8間以區段單位藉著加熱器配線L來連繫，則可對平台12之區域構成做可變控制。 In the wiring structure 93 of this embodiment, a group of heater terminals S are connected to one heater 75 or a plurality of heaters 75. Therefore, if the multiple heater heater terminal S is connected through the heater wiring L, all the heaters 75 to be connected through the multiple heater heater terminal S will constitute the same area controlled in the same temperature zone. That is, as the heater wiring L is connected between the heater terminals in units of sections, and the connected heaters 75 will change, the composition of the same area controlled in the same temperature zone will change. Therefore, according to the wiring structure 93 of this embodiment, the eight sets of heater terminals S1 to S8 are connected by the heater wiring L in units of sections, so that the area configuration of the platform 12 can be variably controlled.

圖3(b)為圖2(b)之B-B截面，顯示二個插座90以及供電部蓋體構件91之截面以及加熱器配線L之一部分。供電部蓋體91係藉由固定構件94而被支撐於C狀構件93a之下面。插座90係由導電性構件所構成，供電部蓋體91係藉由絕緣性構件所構成。供電部蓋體91係覆蓋插座90。 Fig. 3 (b) is a B-B cross section of Fig. 2 (b), showing a cross section of the two sockets 90 and the cover member 91 of the power supply section and a part of the heater wiring L. The power supply section cover 91 is supported below the C-shaped member 93a by a fixing member 94. The socket 90 is made of a conductive member, and the power supply section cover 91 is made of an insulating member. The power supply unit cover 91 covers the socket 90.

圖2(a)以及圖2(b)中係利用保持板13下之空間，在第1層處加熱器用端子S3間係以加熱器配線L來連接，在第2層處加熱器用端子以及加熱器濾波器77間係以加熱器配線L來連接。圖3(b)係顯示將二個加熱器用端子S3之下端部S3a與插座90之上端部90a做連接之加熱器配線L之一部分。插座90中插入有圖1所示加熱器濾波器77之插頭76。 In FIG. 2 (a) and FIG. 2 (b), the space under the holding plate 13 is used, and the heater terminal S3 is connected by the heater wiring L at the first layer, and the heater terminal and the heating at the second layer The filter 77 is connected by a heater wiring L. FIG. 3 (b) shows a part of the heater wiring L connecting the lower end portion S3a of the two heater terminals S3 and the upper end portion 90a of the socket 90. A plug 76 of the heater filter 77 shown in FIG. 1 is inserted into the socket 90.

藉此，加熱器用端子S側(第1層側)之加熱器75與插座側(第2層側)之加熱器濾波器77係經由加熱器配線L而連接，形成來自交流電源44之電流流往加熱器75之供電線路。 Thereby, the heater 75 on the heater terminal S side (first layer side) and the heater filter 77 on the socket side (second layer side) are connected via the heater wiring L to form a current flow from the AC power source 44 Power supply line to heater 75.

圖4係顯示本實施形態之加熱器供電機構100之配線構造93之詳細。圖4所示C狀構件93a之俯視圖中，加熱器配線L將加熱器用端子S1、S2間、加熱器用端子S2、S3間、加熱器用端子S3、S4間以區段單位來連接。 FIG. 4 shows the details of the wiring structure 93 of the heater power supply mechanism 100 according to this embodiment. In a plan view of the C-shaped member 93a shown in FIG. 4, the heater wiring L connects the heater terminals S1, S2, the heater terminals S2, S3, and the heater terminals S3, S4 in units of sections.

圖4(b)係圖4(a)所示C狀構件93a以虛線包圍之配線構造93之側視圖。配線構造93係於保持板13下的空間使用了加熱器配線L之加熱器用端子S間的連接構造。配線構造93能以樹脂之盒體99來覆蓋。 FIG. 4 (b) is a side view of the wiring structure 93 surrounded by a dotted line with the C-shaped member 93a shown in FIG. 4 (a). The wiring structure 93 is a connection structure between heater terminals S using heater wiring L in a space under the holding plate 13. The wiring structure 93 can be covered with a resin case 99.

配線構造93成為二層構造，如前述般，第1層中加熱器配線L係將複數組加熱器用端子S間之至少一者以區段單位來連繫者。圖4(b)所示例，第1層之加熱器配線L係將加熱器用端子S1~S4間以區段單位來連繋。第2層之加 熱器配線L係將加熱器用端子S連繫於加熱器濾波器77。圖4(b)所示例，第2層之加熱器配線L係連繫加熱器用端子S4與加熱器用端子S4之附近之加熱器濾波器77。藉此，來自交流電源44之電流被供給至分別連接於加熱器用端子S1、S2、S3、S4的複數加熱器75處。藉著以加熱器配線L來並連之複數加熱器75而受到溫度控制之區域會構成同一區域。依據相關構成，按照本實施形態之加熱器供電機構100，由於8組加熱器用端子S1~S8間之至少一者係使用加熱器配線L以區段單位連繋，可對平台12之區域構成進行可變控制。 The wiring structure 93 has a two-layer structure. As described above, the heater wiring L in the first layer connects at least one of the plurality of heater-use terminals S in a segment unit. In the example shown in FIG. 4 (b), the heater wiring L of the first layer connects the heater terminals S1 to S4 in sections. Addition of layer 2 The heater wiring L connects the heater terminal S to the heater filter 77. In the example shown in FIG. 4 (b), the heater wiring L of the second layer is connected to the heater filter 77 near the heater terminal S4 and the heater terminal S4. Thereby, the current from the AC power source 44 is supplied to the plurality of heaters 75 connected to the heater terminals S1, S2, S3, and S4, respectively. The areas controlled by the plurality of heaters 75 connected in parallel by the heater wiring L constitute the same area. According to the related structure, according to the heater power supply mechanism 100 according to this embodiment, since at least one of the eight heater terminals S1 to S8 is connected by the heater wiring L in section units, the area configuration of the platform 12 can be changed. Variable control.

此外，上述實施形態中，配線構造93係將在C狀構件93a隔離設置之8組加熱器用端子S間之至少一者以加熱器配線L做連繋。但是，設置配線構造93之加熱器用端子S的構件不限於C狀構件93a，也可為例如以環狀、環狀之一部分呈現開口之形狀或是扇狀所構成之構件。此情況之環狀可為橢圓也可為正圓。 In addition, in the above-mentioned embodiment, the wiring structure 93 is such that at least one of the eight sets of heater terminals S provided separately from the C-shaped member 93a is connected with the heater wiring L. However, the member for providing the heater terminal S of the wiring structure 93 is not limited to the C-shaped member 93a, but may be a member having a ring-shaped or ring-shaped portion that has an opening shape or a fan shape. The ring in this case may be an ellipse or a perfect circle.

〔區域構成之適中化〕 [Moderation of regional composition]

其次，針對本實施形態之區域構成之適中化，參見圖5來說明。圖5係顯示一實施形態之區域構成之適中化一例。圖5(a)係顯示電漿處理裝置1為圖1之電容耦合型電漿(CCP(Capacitively Coupled Plasma)裝置之時的區域構成一例。圖5(b)係顯示電漿處理裝置1為使用輻線狹縫天線之CVD(Chemical Vapor Deposition)裝置之時的區域構成一例。 Next, the moderation of the area structure in this embodiment will be described with reference to FIG. 5. FIG. 5 shows an example of the moderation of the area structure of an embodiment. Fig. 5 (a) shows an example of the area configuration when the plasma processing device 1 is a capacitively coupled plasma (CCP) device of Fig. 1. Fig. 5 (b) shows that the plasma processing device 1 is used. An example of the area configuration at the time of a CVD (Chemical Vapor Deposition) device for a radial slot antenna.

於腔室10內所生成之電漿分布會隨電漿處理裝置1之特性、程序條件等而改變。是以，本實施形態之加熱器供電機構100係進行配線構造93中加熱器配線L之替換連繋，適中化成為符合所生成之電漿分布的區域構成。 The plasma distribution generated in the chamber 10 will change depending on the characteristics of the plasma processing apparatus 1 and the program conditions. Therefore, the heater power supply mechanism 100 of the present embodiment performs the replacement connection of the heater wiring L in the wiring structure 93, and is moderately formed into a region structure conforming to the generated plasma distribution.

例如，CCP裝置之情況，平台內側之電漿分布具均一性，而外側容易變成不均一。於此情況，係以內側區域寬廣、外側區域狹窄的方式來控制區域構成(各區域之配置)。 For example, in the case of a CCP device, the plasma distribution on the inside of the platform is uniform, while the outside is likely to become uneven. In this case, the region configuration (arrangement of each region) is controlled so that the inner region is wide and the outer region is narrow.

具體而言，如圖5(a-1)所示般，加熱器配線L係連接加熱器用端子S5、S6。在圖5(a-2)之中間(Middle)之圓所示供電部蓋體91連接圖5(a-3)之加熱器濾波器77b。藉此，加熱器用端子S5、S6與加熱器濾波器77b受到連，連接於加熱器用端子S5、S6之複數加熱器75被控制在同一溫度帶。 Specifically, as shown in FIG. 5 (a-1), the heater wiring L is connected to the heater terminals S5 and S6. The power supply part cover 91 shown in the middle circle of FIG. 5 (a-2) is connected to the heater filter 77b of FIG. 5 (a-3). Thereby, the heater terminals S5 and S6 are connected to the heater filter 77b, and the plurality of heaters 75 connected to the heater terminals S5 and S6 are controlled to the same temperature zone.

圖5(a-2)之邊緣(Edge)之圓所示供電部蓋體係連接圖5(a-3)之加熱器濾波器77c。藉此，加熱器用端子S7與加熱器濾波器77c受到連接。加熱器用端子S8在圖5(a-2)之最邊緣(V.Edge)之圓所示供電部蓋體91係連接圖5(a-3)之加熱器濾波器77d。藉此，加熱器用端子S8與加熱器濾波器77d受到連接。 The power supply part cover system shown by the circle of the edge of Fig. 5 (a-2) is connected to the heater filter 77c of Fig. 5 (a-3). Thereby, the heater terminal S7 and the heater filter 77c are connected. The heater terminal S8 is connected to the heater filter 77d of FIG. 5 (a-3) at the power supply section cover 91 shown in the circle at the outermost edge (V.Edge) of FIG. 5 (a-2). Thereby, the heater terminal S8 and the heater filter 77d are connected.

藉此，最邊緣(最外周區域)以及邊緣區域相較於中間區域來得狹窄。 As a result, the outermost region (the outermost peripheral region) and the outer region are narrower than the middle region.

另一方面，如圖5(a-1)所示般，加熱器配線L係連接加熱器用端子S1~S4。圖5(a-2)之中央(Center)之圓所示供電部蓋體係連接圖5(a-3)之加熱器濾波器77a。藉此，連接於加熱器用端子S1~S4之複數加熱器75被控制在同一溫度帶。 On the other hand, as shown in FIG. 5 (a-1), the heater wiring L is connected to the heater terminals S1 to S4. The power supply unit cover system shown in the circle at the center of Fig. 5 (a-2) is connected to the heater filter 77a of Fig. 5 (a-3). Accordingly, the plurality of heaters 75 connected to the heater terminals S1 to S4 are controlled to the same temperature range.

如此般在圖5(a)之CCP裝置之情況，可控制成為內周側之中央區域寬廣、外周側之邊緣、最邊緣區域狹窄、中間區域較邊緣區域以及最邊緣區域來得寬廣之區域構成。藉此，可提高平台12之溫度均一性。此外，當於聚焦環18配置有加熱器之情況，係於聚焦環(F/R)18之加熱器連接加熱器濾波器77e。 As such, in the case of the CCP device of FIG. 5 (a), it is possible to control the composition of a wide central area on the inner peripheral side, an outer peripheral side edge, a narrowest outermost area, and a wider middle area than the outermost and outermost areas. Thereby, the temperature uniformity of the platform 12 can be improved. When a heater is provided in the focus ring 18, a heater connected to the focus ring (F / R) 18 is connected to a heater filter 77e.

當使用圖5(b)之輻線狹縫天線之CVD裝置之情況，平台12之外側的電漿分布具均一性，而內側容易成為不均一。於此情況，以外側區域寬廣、內側區域狹窄的方式來可變控制區域構成為佳。 When the CVD device of the radial slot antenna of FIG. 5 (b) is used, the plasma distribution on the outer side of the platform 12 is uniform, and the inner side tends to be non-uniform. In this case, it is preferable to variably control the region configuration such that the outer region is wide and the inner region is narrow.

是以，於此情況，如圖5(b-1)所示般，加熱器配線L係連接加熱器用端子S7、S8。此外，加熱器配線L係連接加熱器用端子S5、S6。藉此，連接於加熱器用端子S7、S8之複數加熱器75(對應於最邊緣區域)被控制在同一溫度帶，連接於加熱器用端子S5、S6之複數加熱器75(對應於邊緣區域)被控制在同一溫度帶。 Therefore, in this case, as shown in FIG. 5 (b-1), the heater wiring L is connected to the heater terminals S7 and S8. The heater wiring L is connected to the heater terminals S5 and S6. Thereby, the plural heaters 75 (corresponding to the outermost region) connected to the heater terminals S7 and S8 are controlled in the same temperature zone, and the plural heaters 75 (corresponding to the marginal region) connected to the heater terminals S5 and S6 are controlled. Controlled in the same temperature zone.

此外，加熱器配線L係連接加熱器用端子S2~S4。藉此，連接於加熱器用端子S2~S4之複數加熱器75(對應於中間區域)被控制在同一溫度帶。此外，並無並連於加熱器用端子S1之加熱器用端子，連接於加熱器用端子S1之加熱器75係對應於中央區域。 The heater wiring L is connected to the heater terminals S2 to S4. Thereby, the plurality of heaters 75 (corresponding to the middle region) connected to the heater terminals S2 to S4 are controlled in the same temperature zone. In addition, there is no heater terminal connected in parallel to the heater terminal S1, and the heater 75 connected to the heater terminal S1 corresponds to the central region.

如此般使用圖5(b)之輻線狹縫天線之CVD裝置之情況，可控制成為內周側之中央區域為狹窄、中間~最邊緣區域為寬廣之區域構成。藉此，可提高 平台12之溫度均一性。 In the case of the CVD apparatus using the radial slot antenna shown in FIG. 5 (b) as described above, it is possible to control a configuration in which the central region on the inner peripheral side is narrow and the middle to outermost regions are wide. This can improve The temperature uniformity of the platform 12.

此外，關於朝圖5(b-2)以及圖5(b-3)所示加熱器濾波器77之連接由於和朝圖5(a-2)以及圖5(a-3)所示加熱器濾波器77之連接同樣，故省略說明。 The connection to the heater filter 77 shown in FIGS. 5 (b-2) and 5 (b-3) is due to the connection to the heater shown in FIGS. 5 (a-2) and 5 (a-3). The connection of the filter 77 is the same, so the description is omitted.

〔平台溫度控制方法〕 [Platform temperature control method]

其次，針對本實施形態之平台溫度控制方法，參見圖6以及圖7來說明。圖6係顯示一實施形態之平台溫度控制方法一例之流程圖。圖7係顯示一實施形態之各裝置的區域構成一例之表。例如，如圖5(a)所說明般，當電漿處理裝置1為CCP裝置之情況，並連之加熱器用端子S在中央區域為加熱器用端子S1~S4、在中間區域為加熱器用端子S5，S6一事係事先設定於表中。此外，並無並連於邊緣區域之加熱器用端子S7以及最邊緣區域之加熱器用端子S8的加熱器用端子。 Next, the platform temperature control method of this embodiment will be described with reference to FIGS. 6 and 7. FIG. 6 is a flowchart showing an example of a platform temperature control method according to an embodiment. FIG. 7 is a table showing an example of a region configuration of each device according to an embodiment. For example, as illustrated in Fig. 5 (a), when the plasma processing apparatus 1 is a CCP apparatus, the heater terminals S connected in parallel are heater terminals S1 to S4 in the central region and heater terminals S5 in the middle region , S6 is set in the table in advance. In addition, there are no heater terminals connected in parallel to the heater terminal S7 of the edge region and the heater terminal S8 of the outermost region.

圖7中，舉出3種電漿處理裝置為例來例示區域構成，但於其他電漿處理裝置也可因應於其裝置之電漿分布特性來決定區域構成而記憶於表中。此外，電漿處理裝置1之種類(特性)為晶圓受到電漿處理之條件的一例。在晶圓受到電漿處理之條件的其他例方面，可舉出程序條件(氣體種類、氣體流量、溫度、壓力、高頻電力之功率等)。因應於此等例所舉出之「晶圓受到電漿處理之條件」將適中化之區域構成事先記憶於表中，基於該表如圖6之流程圖所示般來可變控制區域構成。表係記憶於RAM等記憶部。 In FIG. 7, three types of plasma processing apparatuses are taken as examples to illustrate the region configuration. However, other plasma processing apparatuses may also determine the region configuration in accordance with the plasma distribution characteristics of the apparatus and store them in the table. The type (characteristics) of the plasma processing apparatus 1 is an example of conditions under which a wafer is subjected to plasma processing. As other examples of the conditions under which the wafer is subjected to plasma processing, program conditions (gas type, gas flow rate, temperature, pressure, power of high-frequency power, etc.) can be mentioned. In response to the "conditions under which the wafer is subjected to plasma processing" cited in these examples, the moderated area structure is stored in advance in a table, and based on this table, the area structure is variably controlled as shown in the flowchart of FIG. 6. The watch is stored in a memory such as RAM.

一旦開始圖6之處理，則控制部48會判定為電漿處理裝置1之組裝時或是維修時(步驟S10)。當為電漿處理裝置1之組裝或是維修時之情況，控制部48會基於在RAM等記憶體中所記憶之表來決定加熱器用端子S間之連接部位以成為因應於裝置之區域構成(步驟S12)。控制部48係以使用加熱器配線L將加熱器用端子S間以區段單位做連繋的方式進行控制(步驟S14)。 When the process of FIG. 6 is started, the control unit 48 determines whether the plasma processing apparatus 1 is being assembled or repaired (step S10). In the case of assembly or maintenance of the plasma processing apparatus 1, the control unit 48 determines a connection portion between the heater terminals S based on a table stored in a memory such as a RAM, so as to form a region structure corresponding to the apparatus ( Step S12). The control unit 48 performs control so that the heater terminals S are connected in units of sections using the heater wiring L (step S14).

使用加熱器配線L之加熱器用端子S間的連接以在連繫加熱器用端子S間的加熱器配線L設置切換機構而藉由開關的開啟與關閉來自動連接為佳。 It is preferable that the connection between the heater terminals S using the heater wiring L is provided with a switching mechanism in the heater wiring L connected between the heater terminals S, and that the automatic connection is performed by turning the switch on and off.

以上，依據本實施形態之加熱器供電機構100，藉由對配線構造93內之加熱器配線L做替換連繋，可將相同平台12控制成為不同區域構成。例如， 當連接於加熱器用端子S間的二個加熱器75配置在周向之情況，依據本實施形態，藉由控制加熱器用端子S間的連接，可在周向上可變控制區域寬度。亦即，可在周向上控制區域構成。 As described above, according to the heater power supply mechanism 100 of the present embodiment, the same platform 12 can be controlled to form a different area by replacing the heater wiring L in the wiring structure 93. E.g, When the two heaters 75 connected between the heater terminals S are arranged in the circumferential direction, according to this embodiment, the width of the control region can be changed in the circumferential direction by controlling the connection between the heater terminals S. That is, the area can be controlled in the circumferential direction.

另一方面，當連接於加熱器用端子S間之二個加熱器75以徑向配置之情況，依據本實施形態，可藉由控制加熱器用端子S間之連接而於徑向上可變控制區域寬度。亦即，可在徑向上控制區域構成。 On the other hand, when the two heaters 75 connected between the heater terminals S are arranged radially, according to this embodiment, the width of the control region can be changed in the radial direction by controlling the connection between the heater terminals S. . That is, the area configuration can be controlled in the radial direction.

以上，雖依據上述實施形態說明了加熱器供電機構以及平台溫度控制方法，但本發明不限於上述實施形態，可在本發明之範圍內做各種變形以及改良。此外，上述實施形態以及變形例可在不致矛盾的範圍內進行組合。 Although the heater power supply mechanism and the platform temperature control method have been described based on the above embodiments, the present invention is not limited to the above embodiments, and various modifications and improvements can be made within the scope of the present invention. In addition, the above-mentioned embodiments and modifications can be combined within a range that does not contradict each other.

例如，本發明之加熱器供電機構不僅是適用於電容耦合型電漿(CCP：Capacitively Coupled Plasma)裝置，也可適用於其他電漿處理裝置。在其他電漿處理裝置方面也可為使用感應耦合型電漿(ICP：Inductively Coupled Plasma)、輻線狹縫天線之CVD(Chemical Vapor Deposition)裝置、螺旋波激發型電漿(HWP：Helicon Wave Plasma)裝置、電子迴旋共振電漿(ECR：Electron Cyclotron Resonance Plasma)裝置等。 For example, the heater power supply mechanism of the present invention is applicable not only to a capacitively coupled plasma (CCP) device, but also to other plasma processing devices. In other plasma processing equipment, it can also be an Inductively Coupled Plasma (ICP), a CVD (Chemical Vapor Deposition) device with a radial slot antenna, and a Helicon Wave Plasma (HWP) ) Device, electronic cyclotron resonance plasma (ECR: Electron Cyclotron Resonance Plasma) device, etc.

此外，以本發明之電漿處理裝置所處理之基板不限於晶圓，也可為例如平板顯示器(Flat Panel Display)用之大型基板、EL元件或是太陽電池用之基板。 In addition, the substrate processed by the plasma processing apparatus of the present invention is not limited to a wafer, and may be, for example, a large substrate for a flat panel display, an EL element, or a substrate for a solar cell.

Claims (6)

一種加熱器供電機構，係將載置基板之平台以複數加熱器來區域化，而可對各區域進行溫度控制者；具有：複數組加熱器用端子，係以一組加熱器用端子為一區段，以區段單位來連接於該複數加熱器之中一者；加熱器配線；第一配線構造，係使用該加熱器配線將該複數組加熱器用端子之間之至少一者以區段單位來連繋；以及第二配線構造，係使用該加熱器配線來將該複数組加熱器用端子之間之至少一者連接於濾波器。A heater power supply mechanism, which uses a plurality of heaters to regionalize the platform on which the substrate is placed, and can control the temperature of each area; it has: a plurality of heater terminals, which consists of a group of heater terminals. Connected to one of the plurality of heaters in section units; heater wiring; a first wiring structure that uses the heater wiring to connect at least one of the plurality of heater terminals with the section unit Connection; and a second wiring structure that uses the heater wiring to connect at least one of the plurality of heater terminals to a filter. 如申請專利範圍第1項之加熱器供電機構，其中使用該第一配線構造內之該加熱器配線的該複數組加熱器用端子間之連接係以區段單位來替換連繋。For example, the heater power supply mechanism of the scope of application for a patent, wherein the connection between the terminals of the plurality of array heaters using the heater wiring in the first wiring structure is replaced by a section unit. 如申請專利範圍第1或2項之加熱器供電機構，其中該第一配線構造及該第二配線構造係將在以環狀、環狀之一部分呈開口之形狀或是扇狀所構成之構件處所隔離設置之複數組加熱器用端子間之至少一者使用該加熱器配線來做連繋。For example, the heater power supply mechanism of the first or second patent application scope, wherein the first wiring structure and the second wiring structure are members formed in a ring shape or a ring shape, or a fan shape. At least one of the terminals for a plurality of heaters provided separately from the space is connected using the heater wiring. 如申請專利範圍第1或2項之加熱器供電機構，其中該第一配線構造及該第二配線構造係設置在將該平台之靜電夾頭加以保持之保持板下的空間處。For example, the heater power supply mechanism according to item 1 or 2 of the patent application scope, wherein the first wiring structure and the second wiring structure are disposed at a space under a holding plate that holds the electrostatic chuck of the platform. 一種平台溫度控制方法，係使用加熱器供電機構來進行控制，該加熱器供電機構係將載置基板之平台以複數加熱器來區域化，而可對各區域進行溫度控制者；該加熱器供電機構具有複數組加熱器用端子，係以一組加熱器用端子為一區段，以區段單位來連接於該複數加熱器之中一者；該平台溫度控制方法包含下述製程：決定該複數組加熱器用端子間之連接部位之製程；將該決定之複數組加熱器用端子間之連接部位使用加熱器配線而以區段單位做連繋，藉以控制該平台之區域構成之製程；以及使用該加熱器配線來將該複数組加熱器用端子之間之至少一者連接於濾波器之製程。A platform temperature control method uses a heater power supply mechanism to perform control. The heater power supply mechanism is to regionalize a platform on which a substrate is placed with a plurality of heaters, and can control the temperature of each area. The mechanism has a plurality of heater terminals, which uses a group of heater terminals as a section, and is connected to one of the plurality of heaters in units of sections. The platform temperature control method includes the following processes: determining the plurality of heaters Manufacturing process of the connection part between the terminals for heaters; the process of controlling the composition of the area of the platform by using the wiring of the heater to connect the determined connection part of the plurality of terminals for the heaters with the heater unit; and using the heater The process of wiring to connect at least one of the terminals for the plurality of heaters to the filter. 如申請專利範圍第5項之平台溫度控制方法，其中決定該連接部位之製程係基於事先記憶於記憶部之因應於基板所受電漿處理之條件的區域構成，來決定該複數組加熱器用端子間之連接部位；控制該區域構成之製程係將該決定之複數組加熱器用端子間之連接部位使用加熱器配線來以區段單位做替換連繋來可變控制該平台之區域構成。For example, the method for controlling the temperature of a platform according to item 5 of the patent application, in which the process of determining the connection part is based on the area structure previously stored in the memory part in accordance with the conditions of the plasma treatment on the substrate to determine the inter-heater terminal range. The connection part; the process of controlling the area configuration is to use the heater wiring to replace the connection part between the heater terminals of the determined multiple array heaters in units of sections to variably control the area configuration of the platform.
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