TWI731463B - Method for manufacturing a lateral spoiler high uniformity inductively coupled plasma etcher and a structure thereof - Google Patents

Abstract

The present invention provides a method for manufacturing a lateral spoiler high uniformity inductively coupled plasma etcher and a structure thereof, wherein the method comprises: providing a first chamber; providing a second chamber formed above the first chamber and connected to the first chamber; providing at least one first air inlet disposed on the top of the second reaction chamber; providing at least one second air inlet disposed at the periphery of the second reaction chamber and located at the top of the first reaction chamber; and providing a plurality of third air inlets formed on the sidewall of the first reaction chamber and above the top surface of the wafer. By the implementation of the invention, the gas shunting effect can be improved, and the gas shunt can be effectively adjusted to achieve the effect of changing the etch rate distribution on the wafer surface and increased the surrounding concentration.

Description

Manufacturing method and structure of lateral turbulent high-uniformity inductively coupled plasma etching machine

The present invention is a method for manufacturing a laterally turbulent high-uniformity inductively coupled plasma etcher and its structure, especially a method for manufacturing a laterally turbulent high-uniformity inductively coupled plasma etcher used in semiconductor manufacturing process And its structure.

Whether it is semiconductor, optoelectronic industry, or power electronic components, the use of plasma etching process production has been widely used. In response to different process requirements, various process parameters for adjusting uniformity must be provided. It is a common practice to use the upper process to split the gas at the intake position to adjust the uniformity of the etching rate, especially the capacitive radio frequency plasma etcher with a chamber gap of less than 20 mm (mm). Capacitive Coupled Plasma, CCP), its effect is very obvious.

However, for the Inductive Couple Plasma Etcher (ICP), the use of gas splitting has no effect. This is because ICPs all use wide gaps with gaps greater than 140 millimeters (mm). The gases will be mixed together before they reach the wafer. In the past, inductively coupled plasma etchers used gas splitting methods. , Does not have much effect.

As shown in Figures 1 and 2, the conventional inductively coupled plasma etcher uses a first air inlet to provide the main gas for plasma reaction and a second air inlet to assist in raising the plasma reaction zone. The peripheral concentration of the gas reactant, but such a design is often because the gas sent from the second air inlet is easily drawn directly by the exhaust port, so the effect of increasing the concentration of the surrounding gas reactant cannot be achieved as expected.

The present invention is a manufacturing method and structure of a laterally turbulent high-uniformity inductively coupled plasma etching machine. It mainly solves how to increase the uniformity of etching and the peripheral concentration of gas reactants by adjusting the gas shunt. In order to achieve the best etching effect.

The present invention provides a method for manufacturing a laterally turbulent high-uniformity inductively coupled plasma etching machine, which includes: providing a first cavity with a first reaction chamber; providing a first coil surrounded by On the periphery of the first cavity; a second cavity is provided, which has a second reaction chamber, the second cavity system is formed below the first cavity, and the second reaction chamber is connected to the first reaction chamber Provide a second coil, which is arranged around the periphery of the second cavity; set at least one first air inlet, which is formed on the top surface of the first reaction chamber, and the first air inlet enters a first The gas flow forms a gas reactant gas mass in the plasma reaction zone of the first reaction chamber and the second reaction chamber to cover a wafer; at least one second air inlet is provided, which is formed in the first reaction chamber The periphery of the second cavity is located on the top surface of the second cavity, and the second air inlet is used to input a second air flow to pass through the edge area of the gas reactant mass; a plurality of third air inlets are provided, which are formed in the second On the side wall of the reaction chamber and higher than the top surface of the wafer, a third gas flow is input to the third air inlet to cause the second gas flow to generate turbulence to increase the gas at the edge of the gas reactant gas mass The concentration of reactant molecules; at least one air outlet is provided, which communicates with the second reaction chamber and is formed at a position below the wafer.

The present invention also provides a side turbulent high uniformity inductively coupled plasma etching machine structure, which includes: a first cavity with a first reaction chamber; a first coil, which is arranged around the first cavity The periphery of a cavity; a second cavity having a second reaction chamber, the second cavity system is formed below the first cavity, and the second reaction chamber is communicated with the first reaction chamber; The second coil is arranged around the periphery of the second cavity; at least one first air inlet is formed on the top surface of the first reaction chamber; at least one second air inlet is formed on the top surface of the first reaction chamber The periphery and the position on the top surface of the second cavity; a plurality of third air inlets formed on the side wall of the second reaction cavity and higher than the top surface of a wafer; and at least one air outlet, which is The second reaction chamber is communicated and formed at a position under the wafer.

Through the implementation of the present invention, at least the following advanced effects can be achieved: 1. The distribution of the etching rate on the wafer surface can be changed effectively by adjusting the gas shunt. 2. It can improve the poor gas splitting effect of the wide gap reaction chamber in the past. 3. It can effectively increase the surrounding concentration of gas reactants.

In order to enable anyone who is familiar with the relevant art to understand the technical content of the present invention and implement it accordingly, and according to the content disclosed in this specification, the scope of patent application and the drawings, anyone who is familiar with the relevant art can easily understand the purpose and advantages of the present invention. Therefore, the detailed features and advantages of the present invention will be described in detail in the embodiments.

As shown in FIG. 3, this embodiment first provides a method S100 for manufacturing a laterally turbulent high-uniformity inductively coupled plasma etching machine, which includes: providing a first cavity S10; providing a first coil S20; providing A second cavity S30; a second coil S40; at least one first air inlet S50; at least one second air inlet S60; a plurality of third air inlets S70; and at least one air outlet S80.

As shown in FIG. 4, this embodiment also provides a side-turbulent high-uniformity inductively coupled plasma etching machine structure 100, which includes: a first cavity 10; a first coil 20; and a second cavity Body 30; a second coil 40; at least one first air inlet Qin1; at least one second air inlet Qin2; a plurality of third air inlets Qin3; and at least one air outlet 80.

As shown in FIGS. 3 to 6, a first cavity S10 is provided. The first cavity 10 has a first reaction chamber 110, and the first reaction chamber 110 is a chamber capable of performing an etching reaction.

A first coil S20 is provided, the first coil 20 is arranged around the periphery of the first cavity 10, and the first coil 20 is used to provide the first reaction chamber 110 with the electromagnetic wave energy required for the plasma reaction.

A second cavity S30 is provided. The second cavity 30 has a second reaction chamber 310. The second cavity 30 is formed under the first cavity 10, and the second reaction chamber 310 is connected to the first reaction chamber. The chamber 110 is connected. Similarly, the second reaction chamber 310 can also be a chamber that can perform etching reaction.

A second coil S40 is provided. The second coil 40 is arranged around the periphery of the second cavity 30. Similarly, the second coil 40 is used to provide the second reaction chamber 310 with the electromagnetic wave energy required for the plasma reaction .

At least one first air inlet S50 is provided, and the first air inlet S50 is formed on the top surface of the first reaction chamber 110, that is, the first air inlet S50 can enter from the top surface of the first reaction chamber 110 gas. In addition, the first air flow AF1 from the first air inlet Qin1 enters the plasma reaction zone PS of the first reaction chamber 110 and the second reaction chamber 310, and is supplied with energy through the first coil 20 and the second coil 40, and then forms a gas The reactant air mass AR0 is also a plasma mass (plasma cloud), and the gas reactant air mass AR0 is used to cover a wafer 910 to perform an etching process on the wafer 910.

At least one second air inlet S60 is provided. The second air inlet Qin2 is formed on the periphery of the first reaction chamber 110 and is located on the top surface of the second cavity 30, and is entered by the second air inlet Qin2 The second air flow AF2 is used to pass through the edge area of the gas reactant air mass AR0.

A plurality of third air inlets S70 are provided. The third air inlet Qin3 is formed on the side wall of the second reaction chamber 30 and is higher than the top surface of the wafer 910, and the third air inlet Qin3 enters The third air flow AF3 is used to cause the second air flow AF2 to generate turbulence, so as to increase the stagnation time of the second air flow AF2, thereby increasing the concentration of gas reactant molecules at the edge of the gas reactant air mass AR0. In order to effectively generate turbulence in the second air flow AF2, the injection angle θ between the third air inlet Qin3 and the horizontal plane is between 0 and 60 degrees.

Since 1% of the gas molecules in the plasma in the plasma reaction zone PS are dissociated into ions and electrons, the other 99% are neutral molecules. These neutral particles (radicals) have an excited state and high activity. Participate in the change of the etching rate, so the third air flow AF3 causes the second air flow AF2 to generate turbulence, which can effectively control the distribution of these neutral particles to change the uniformity of the etching rate.

At least one air outlet S80 is provided, and the air outlet 80 communicates with the second reaction chamber 310 and is formed at a position below the wafer 910. The air outlet 80 is mainly used to remove the exhaust gas after the reaction in the second reaction chamber 310.

As shown in FIG. 7, in order to effectively make the air intake between the first air inlet Qin1, the second air inlet Qin2, the third air inlet Qin3, and the air outlet 80 achieve the best ratio and the best Therefore, a gas flow rate proportional controller 920 may be further provided or provided to control at least one first air inlet Qin1, at least one second air inlet Qin2, a plurality of third air inlets Qin3, and air outlets The gas flow rate and flow rate between 80.

As shown in Figure 8, it is the second reaction chamber 310 with a radius of 0.1 meters (the horizontal axis is the arc length representing the horizontal distance, and the unit is meters m, and the horizontal coordinate is 0 for the second reaction chamber. 310 in the center position of the wafer 910), to simulate the air intake of different air inlets, where the first characteristic curve L1 is at the first air inlet Qin1 where the air inlet volume is 0 unit, and the second air inlet Qin2 The characteristic curve under the condition that the intake air quantity is 300 units and the intake air quantity of the third intake port Qin3 is 0 unit; and the second characteristic curve L2 is the intake air quantity of the first intake port Qin1 is 0 unit, the first The characteristic curve under the condition that the air intake of the second air inlet Qin2 is 0 unit and the air intake of the third air inlet Qin3 is 300 units; by comparing the first characteristic curve L1 and the second characteristic curve L2, It can be clearly known that in the concentration of molecular weight distribution (the vertical axis represents the percentage of molecular weight concentration), when the third air inlet Qin3 provides intake air, the uniformity of the second characteristic curve L2 is obviously better than that of the first characteristic curve L1 .

As shown in Figure 9, it also takes the second reaction chamber 310 with a radius of 0.1 meters (the horizontal axis is the arc length representing the horizontal distance, and the unit is meters m, and the horizontal coordinate is 0 for the second reaction chamber. The center position of the wafer 910 in 310), the simulation of different air inlets is performed, where the third characteristic curve L3 is at the first air inlet Qin1 where the air inlet volume is 0 unit, and the second air inlet Qin2 The characteristic curve under the condition that the intake air volume is 100 units and the intake air volume of the third intake port Qin3 is 0 unit; and the second characteristic curve L4 is the air intake volume of the first intake port Qin1 is 0 unit, the first The characteristic curve under the condition that the air intake of the second air intake Qin2 is 200 units and the air intake of the third air intake Qin3 is 0 units; and the second characteristic curve L5 is the air intake of the first air intake Qin1 The characteristic curve under the condition that the quantity is 0 unit, the intake quantity of the second intake port Qin2 is 100 units, and the intake quantity of the third intake port Qin3 is 100 units; by the third characteristic curve L3, the fourth characteristic Comparing the curve L4 and the fourth characteristic curve L5, we can clearly know that in the concentration of the molecular weight distribution (the vertical axis represents the percentage of molecular weight concentration), when the second air inlet Qin2 and the third air inlet Qin3 provide simultaneous At the time of gas, the molecular weight concentration at the outer edge of the first reaction chamber 110 has been significantly increased.

However, the above-mentioned embodiments are used to illustrate the characteristics of the present invention, and their purpose is to enable those who are familiar with the technology to understand the content of the present invention and implement them accordingly, rather than limiting the scope of the invention. Therefore, everything else does not depart from the present invention. The equivalent modification or modification completed by the spirit of the disclosure should still be included in the scope of patent application described below.

S100.............. The manufacturing method of lateral turbulent high-uniformity inductively coupled plasma etching machine S10...............Provide a first cavity S20............... Provide a first coil S30............... Provide a second cavity S40............... Provide a second coil S50...............Set at least one first air inlet S60...............Set at least one second air inlet S70...............Set multiple third air inlets S80...............Set at least one air outlet 100...... Side turbulent high-uniformity inductively coupled plasma etching machine structure 10................. The first cavity 110................ First reaction chamber 20................. First coil 30.......Second cavity 310................Second reaction chamber 40................. Second coil Qin1.............. First air inlet Qin2.............. The second air inlet Qin3.............. The third air inlet 80................. Outlet 910................ Wafer 920......Gas flow proportional controller PS...Plasma reaction zone AR0.............. Gas reactant mass AF1...............First airflow AF2...............Second airflow AF3...............The third airflow θ.................. Spray angle L1................. First characteristic curve L2................. Second characteristic curve L3......The third characteristic curve L4................. Fourth characteristic curve L5................. Fifth characteristic curve

[Figure 1] is an embodiment diagram of a conventional first air inlet with a second air inlet for air intake; [Figure 2] is the air flow simulation state diagram of Figure 1; [Figure 3] is an embodiment diagram of the manufacturing method of a laterally turbulent high-uniformity inductively coupled plasma etching machine; [Figure 4] is a diagram of an embodiment diagram of a side-turbulent high-uniformity inductively coupled plasma etching machine; [Figure 5] is an embodiment diagram of the airflow state of air intake using three sets of air inlets; [Figure 6] is the air flow simulation state diagram of Figure 5; [Figure 7] is a diagram of an embodiment of the architecture of three groups of air inlets using a gas flow proportional controller; [Figure 8] is a characteristic curve diagram of the half-side uniformity simulation of the first reaction chamber; and [Figure 9] is a characteristic curve diagram of the first reaction chamber for half-edge concentration simulation.

S100.............. The manufacturing method of lateral turbulent high-uniformity inductively coupled plasma etching machine S10...............Provide a first cavity S20............... Provide a first coil S30............... Provide a second cavity S40............... Provide a second coil S50...............Set at least one first air inlet S60...............Set at least one second air inlet S70...............Set multiple third air inlets S80...............Set at least one air outlet

Claims (3)

A method for manufacturing a laterally turbulent high-uniformity inductively coupled plasma etching machine includes: providing a first cavity with a first reaction chamber; providing a first coil, which is arranged around the first cavity The periphery of a cavity; a second cavity is provided, which has a second reaction chamber, the second cavity system is formed below the first cavity, and the second reaction chamber and the first reaction chamber The chambers are connected; a second coil is provided around the periphery of the second cavity; at least one first air inlet is provided, which is formed on the top surface of the first reaction chamber, and the first air inlet A first gas flow is input into the port to form a gas reactant gas mass in the plasma reaction zone of the first reaction chamber and the second reaction chamber to cover a wafer; at least one second air inlet is provided, It is formed on the periphery of the first reaction chamber and is located on the top surface of the second cavity, and the second air inlet is fed with a second gas flow for passing through the edge area of the gas reactant mass; A third air inlet formed on the side wall of the second reaction chamber and higher than the top surface of the wafer, and the third air inlet inputs a third air flow to make the first The two gas streams generate turbulence to increase the concentration of gas reactant molecules at the edge of the gas reactant gas mass; and at least one gas outlet is provided, which communicates with the second reaction chamber and is formed at a position below the wafer. In the manufacturing method described in item 1 of the scope of patent application, the injection angle of the third air inlets is between 0 and 60 degrees. As the manufacturing method described in item 1 of the scope of patent application, it further provides A gas flow ratio controller for controlling the ratio and flow rate of the gas flow among the at least one first air inlet, the at least one second air inlet, the plurality of third air inlets, and the air outlet .

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