TWI660527B - Light-emitting device and manufacturing method thereof - Google Patents

Light-emitting device and manufacturing method thereof Download PDF

Info

Publication number
TWI660527B
TWI660527B TW107108679A TW107108679A TWI660527B TW I660527 B TWI660527 B TW I660527B TW 107108679 A TW107108679 A TW 107108679A TW 107108679 A TW107108679 A TW 107108679A TW I660527 B TWI660527 B TW I660527B
Authority
TW
Taiwan
Prior art keywords
light
emitting diode
diode element
transparent substrate
led die
Prior art date
Application number
TW107108679A
Other languages
Chinese (zh)
Other versions
TW201820663A (en
Inventor
謝明勳
Original Assignee
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Publication of TW201820663A publication Critical patent/TW201820663A/en
Application granted granted Critical
Publication of TWI660527B publication Critical patent/TWI660527B/en

Links

Landscapes

  • Led Device Packages (AREA)

Abstract

本發明係揭露一種發光二極體元件之形成方法包含:提供一透明基底;提供一LED晶粒固定於該透明基底上,其中該LED晶粒包含兩個電極;提供一第二基底;以及連接該透明基底及該第二基底以將該LED晶粒置於該透明基底及該第二基底之間,使該LED晶粒被該透明基底及該第二基底包覆;其中,兩個電極引腳位於該透明基底及該第二基底之間,且該LED晶粒之兩個電極以非打線連接製程的方式分別電性連接於該兩個電極引腳。The invention discloses a method for forming a light-emitting diode element, including: providing a transparent substrate; providing an LED die fixed on the transparent substrate, wherein the LED die includes two electrodes; providing a second substrate; and connecting The transparent substrate and the second substrate are used to place the LED die between the transparent substrate and the second substrate, so that the LED die is covered by the transparent substrate and the second substrate; wherein two electrodes lead The pins are located between the transparent substrate and the second substrate, and the two electrodes of the LED die are electrically connected to the two electrode pins in a non-wired connection process.

Description

發光二極體元件及其製造方法Light emitting diode element and manufacturing method thereof

本發明係關於一種封裝體之發光二極體元件及其製造方法 The invention relates to a light-emitting diode element of a package and a manufacturing method thereof.

發光二極體(Light-Emitting Diode;LED)具有耗能低、低發熱、操作壽命長、防震、體積小、反應速度快以及輸出的光波長穩定等良好光電特性,因此適用於各種照明用途。隨著發光二極體朝向高功率發展,LED整體元件之操作溫度將隨之升高,傳統封裝如圖1A所示因散熱不佳容易造成在高功率應用時之發光效率下降。又如圖1B所示之LED元件係將LED晶粒101設置於一散熱器(heat sink)102上後,再經由金屬線104a、104b打線(bonding)電連接至兩電極接腳103a、103b,此種設計仰賴散熱器102散熱,以及金屬打線之製程,造成相當之成本。又以上之設計在水平方向之光場不佳,往往需再增設光學元件於LED元件上以改善水平方向之光場均勻性,造成成本支出及應用上體積或厚度之問題。 Light-Emitting Diode (LED) has good photoelectric characteristics such as low energy consumption, low heat generation, long operating life, shock resistance, small size, fast response speed and stable output light wavelength, so it is suitable for various lighting applications. As the light emitting diode develops toward high power, the operating temperature of the overall LED component will increase accordingly. As shown in FIG. 1A, the traditional package is liable to cause poor luminous efficiency in high power applications due to poor heat dissipation. As shown in FIG. 1B, the LED element is provided with the LED die 101 on a heat sink 102 and then electrically connected to the two electrode pins 103a and 103b through metal wires 104a and 104b. This design relies on the heat dissipation of the heat sink 102 and the metal wiring process, which results in considerable costs. In addition, the above design has a poor light field in the horizontal direction, and it is often necessary to add an optical element to the LED element to improve the uniformity of the light field in the horizontal direction, which causes problems in cost and volume or thickness in application.

本發明係揭露一種光源設備包含一載體,具有一表面,該表面具有x軸以及與該x軸垂直的y軸;一第一發光二極體元件設置在該表面上,該第一發光二極體元件包含一第一主出光面,以及一第一LED晶粒,具有兩個電極以及一第一表面,且該兩個電極設置於該第一表面上,其中,該第一主出光面大致垂直於該表面;一第二發光二極體元件設置在該表面上;一第三發光二極體元 件設置在該表面上;以及一第四發光二極體元件設置在該表面上,其中,該第一發光二極體元件與該第二發光二極體元件在x軸的方向上重疊,該第三發光二極體元件以及該第四發光二極體元件在x軸的方向上重疊,以及該第一發光二極體元件,該第二發光二極體元件,該第三發光二極體元件以及該第四發光二極體元件在該y軸的方向上彼此不重疊。 The present invention discloses a light source device including a carrier having a surface having an x-axis and a y-axis perpendicular to the x-axis; a first light-emitting diode element is disposed on the surface, and the first light-emitting diode The body element includes a first main light emitting surface, and a first LED die, having two electrodes and a first surface, and the two electrodes are disposed on the first surface, wherein the first main light emitting surface is roughly Perpendicular to the surface; a second light-emitting diode element is disposed on the surface; a third light-emitting diode element And a fourth light emitting diode element is provided on the surface, wherein the first light emitting diode element and the second light emitting diode element overlap in the x-axis direction, and The third light-emitting diode element and the fourth light-emitting diode element overlap in the x-axis direction, and the first light-emitting diode element, the second light-emitting diode element, and the third light-emitting diode The element and the fourth light-emitting diode element do not overlap each other in the direction of the y-axis.

為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。 In order to make the above and other objects, features, and advantages of the present invention more comprehensible, preferred embodiments are described below in detail with reference to the accompanying drawings, as follows.

101‧‧‧LED晶粒 101‧‧‧LED die

102‧‧‧散熱器 102‧‧‧ Radiator

103a,103b‧‧‧電極接腳 103a, 103b‧‧‧ electrode pins

104a,104b‧‧‧金屬線 104a, 104b‧‧‧ metal wire

20,200‧‧‧發光二極體元件 20,200‧‧‧light-emitting diode element

201‧‧‧LED晶粒 201‧‧‧LED die

201a,201b‧‧‧電極 201a, 201b‧‧‧electrode

202a‧‧‧透明基底 202a‧‧‧ transparent substrate

203a、203b‧‧‧電極引腳 203a, 203b‧‧‧ electrode pins

204a,204b‧‧‧金屬線 204a, 204b ‧‧‧ metal wire

30,300‧‧‧發光二極體元件 30,300‧‧‧light-emitting diode element

301‧‧‧LED晶粒 301‧‧‧LED die

301a,301b‧‧‧電極 301a, 301b‧‧‧ electrode

302a‧‧‧透明基底 302a‧‧‧Transparent substrate

303a、303b‧‧‧電極引腳 303a, 303b‧‧‧ electrode pins

304a,304b‧‧‧金屬線 304a, 304b‧‧‧ metal wire

307‧‧‧螢光粉層 307‧‧‧Fluorescent powder layer

308‧‧‧封裝材料 308‧‧‧Packaging material

315‧‧‧凹槽 315‧‧‧groove

40,400‧‧‧發光二極體元件 40,400‧‧‧light-emitting diode element

401‧‧‧LED晶粒 401‧‧‧LED die

401a,401b‧‧‧電極 401a, 401b‧‧‧ electrode

402a‧‧‧第一透明基底 402a‧‧‧First transparent substrate

402b‧‧‧第二透明基底 402b‧‧‧Second transparent substrate

403a,403b‧‧‧電極引腳 403a, 403b‧‧‧ electrode pins

405‧‧‧封裝材料 405‧‧‧Packaging material

501‧‧‧LED晶粒 501‧‧‧LED die

502a‧‧‧透明基底 502a‧‧‧Transparent substrate

503a,503b‧‧‧電極引腳 503a, 503b‧‧‧ electrode pins

509‧‧‧自散熱層 509‧‧‧Self-radiating layer

509X,509Y‧‧‧條紋圖案 509X, 509Y‧‧‧ stripe pattern

510‧‧‧絕緣層 510‧‧‧ Insulation

60‧‧‧發光二極體元件 60‧‧‧light-emitting diode element

601‧‧‧藍光晶粒 601‧‧‧Blue Light Grain

601’‧‧‧紅光LED晶粒 601’‧‧‧Red LED die

611,611a,611b‧‧‧光學元件 611, 611a, 611b ‧‧‧ Optical Elements

70,700‧‧‧發光二極體元件 70,700‧‧‧light-emitting diode element

701‧‧‧LED晶粒 701‧‧‧LED die

701a,701b‧‧‧電極 701a, 701b‧‧‧ electrode

702a‧‧‧透明基底層 702a‧‧‧ transparent base layer

703a,703b‧‧‧電極引腳 703a, 703b ‧‧‧ electrode pins

708‧‧‧封裝材料 708‧‧‧Packaging material

709‧‧‧自散熱層 709‧‧‧Self-dissipating layer

712‧‧‧基板 712‧‧‧ substrate

720‧‧‧載體 720‧‧‧ carrier

721‧‧‧基座 721‧‧‧ base

722a,722b‧‧‧外部電源接腳 722a, 722b‧‧‧ external power pin

722a’,722b’‧‧‧電源供應墊 722a ’, 722b’‧‧‧ power supply pad

723‧‧‧凹槽 723‧‧‧groove

800‧‧‧發光二極體元件 800‧‧‧light-emitting diode element

821‧‧‧照明面 821‧‧‧illuminated surface

831‧‧‧光學元件 831‧‧‧optical element

900‧‧‧背光模組 900‧‧‧ backlight module

920‧‧‧載體 920‧‧‧ carrier

923‧‧‧凹槽 923‧‧‧Groove

930‧‧‧光場情形 930‧‧‧Light field situation

第1A圖所示為傳統發光二極體之封裝。 Figure 1A shows the package of a conventional light emitting diode.

第1B圖所示為傳統具散熱設計之發光二極體元件。 Figure 1B shows a conventional light emitting diode device with a heat dissipation design.

第2圖所示為本發明之發光二極體元件之第一實施例。 FIG. 2 shows a first embodiment of the light emitting diode device of the present invention.

第3圖所示為本發明之發光二極體元件之第二實施例。 FIG. 3 shows a second embodiment of the light-emitting diode element of the present invention.

第4圖所示為本發明之發光二極體元件之第三實施例。 FIG. 4 shows a third embodiment of the light-emitting diode element of the present invention.

第5圖所示為本發明之發光二極體元件之第四實施例。 FIG. 5 shows a fourth embodiment of the light-emitting diode element of the present invention.

第6圖所示為本發明之發光二極體元件之第五實施例。 FIG. 6 shows a fifth embodiment of the light-emitting diode element of the present invention.

第7圖所示為本發明之發光二極體元件之第六實施例。 FIG. 7 shows a sixth embodiment of the light-emitting diode element of the present invention.

第8圖所示為一習知之背光模組。 FIG. 8 shows a conventional backlight module.

第9圖所示為本發明之第七實施例,說明使用本發明實施例之發光二極體元件構成背光模組之情形。 FIG. 9 shows a seventh embodiment of the present invention, and illustrates a case where a backlight module is constituted by using the light emitting diode element of the embodiment of the present invention.

圖2為本發明之發光二極體元件之第一實施例,其形成方法包含:如圖2(a)所示,提供一透明基底202a包含一透明材料,如玻璃、藍寶石(Al2O3)、CVD鑽石、及氮化鋁(AlN);形成複數組電極引腳203於透明基底上,每一組電 極引腳203分別包含兩電極引腳203a、203b;提供複數個LED晶粒201透過一黏接材料黏接於透明基底202a上,其中,每一LED晶粒201具有兩個電極201a、201b,並與其對應之兩電極引腳203a、203b隔開一距離,其情形如圖2(b)所示;提供複數組金屬線204,每一組金屬線204分別包含兩金屬線204a,204b對應地連接每一LED晶粒201之兩電極201a、201b至電極引腳203a、203b;然後,如圖2(c)所示,切割透明基底202a以形成多個發光二極體元件20;最後,如圖2(d)所示,以一封裝材料205,例如環氧樹脂(Epoxy)或矽膠(silicone)包覆每一發光二極體元件20,封裝材料205內可選擇性地散佈有螢光粉(圖未示)。其中,前述切割之步驟亦可於封裝材料205包覆發光二極體元件之後進行。另外,亦可選擇性地先形成複數之凹槽(圖未示)於透明基底202a上,每一凹槽對應於每一LED晶粒201設置之位置,並使LED晶粒201置放於凹槽內。 FIG. 2 is a first embodiment of a light emitting diode device according to the present invention, and a method for forming the same includes: as shown in FIG. 2 (a), providing a transparent substrate 202a including a transparent material, such as glass, sapphire (Al2O3), CVD Diamond, and aluminum nitride (AlN); forming a plurality of electrode pins 203 on a transparent substrate The electrode pin 203 includes two electrode pins 203a and 203b, respectively. A plurality of LED dies 201 are provided to be adhered to the transparent substrate 202a through an adhesive material, wherein each LED dies 201 has two electrodes 201a and 201b. It is separated from its corresponding two electrode pins 203a, 203b by a distance, as shown in Figure 2 (b); a complex array of metal wires 204 is provided, and each group of metal wires 204 includes two metal wires 204a and 204b respectively. Connect the two electrodes 201a, 201b of each LED die 201 to the electrode pins 203a, 203b; then, as shown in FIG. 2 (c), cut the transparent substrate 202a to form a plurality of light-emitting diode elements 20; finally, as shown in FIG. As shown in FIG. 2 (d), each light-emitting diode element 20 is covered with a packaging material 205, such as epoxy or silicone. The packaging material 205 can be selectively dispersed with fluorescent powder. (Not shown). The aforementioned cutting step may also be performed after the light-emitting diode element is covered by the encapsulating material 205. In addition, a plurality of grooves (not shown) may be selectively formed on the transparent substrate 202a first. Each groove corresponds to the position where each LED die 201 is set, and the LED die 201 is placed in the recess. Inside the slot.

圖2(d)為依本發明第一實施例所形成之發光二極體元件200,包含一透明基底202a包含一透明材料,如玻璃、藍寶石(Al2O3)、CVD鑽石、及氮化鋁(AlN);一組電極引腳203於透明基底202a上,包含兩電極引腳203a,203b;一LED晶粒201置於透明基底202a上,LED晶粒201與兩電極引腳203a,203b隔開一距離,且LED晶粒201具有兩個電極201a,201b;一組金屬線204,包含兩金屬線204a,204b對應地連接LED晶粒201之兩電極201a,201b至電極引腳203a,203b;及一封裝材料205,例如環氧樹脂(Epoxy)或矽膠(silicone)封裝於元件20外圍,即封裝材料205封裝於透明基底202a、LED晶粒201、兩電極引腳203a,203b及兩金屬線204a,204b外圍,並露出部份之兩電極引腳203a,203b。此封裝材料205內可選擇性地散佈有螢光粉(圖未示)。另外,此透明基底202a對於LED晶粒201亦可選擇性地包含一供LED晶粒201置放之凹槽(圖未示),使LED晶粒201置放於其中。 FIG. 2 (d) is a light-emitting diode device 200 formed according to the first embodiment of the present invention, including a transparent substrate 202a including a transparent material such as glass, sapphire (Al2O3), CVD diamond, and aluminum nitride (AlN ); A set of electrode pins 203 on a transparent substrate 202a, including two electrode pins 203a, 203b; an LED die 201 is placed on the transparent substrate 202a, the LED die 201 is separated from the two electrode pins 203a, 203b by one Distance, and the LED die 201 has two electrodes 201a, 201b; a set of metal wires 204 including two metal wires 204a, 204b correspondingly connect the two electrodes 201a, 201b of the LED die 201 to the electrode pins 203a, 203b; and A packaging material 205, such as epoxy or silicon, is packaged on the periphery of the component 20, that is, the packaging material 205 is packaged on the transparent substrate 202a, the LED die 201, the two electrode pins 203a, 203b, and the two metal wires 204a. , 204b, and two electrode pins 203a, 203b are exposed. Fluorescent powder (not shown) can be selectively dispersed in the packaging material 205. In addition, the transparent substrate 202a may optionally include a recess (not shown) for the LED die 201 to be placed therein, so that the LED die 201 is placed therein.

本發明之發光二極體元件之第二實施例如圖3所示,本實施例為第一實施例之變化。本實施例發光二極體元件之形成方法包括:如圖3(a)所示,提供一透明基底302a包含一透明材料,如玻璃、藍寶石(Al2O3)、CVD鑽石、及氮化鋁(AlN);形成複數個凹槽315;形成複數組電極引腳303於透明基底上,每一組電極引腳303分別包含兩電極引腳303a、303b;在透明基底302a上形成一螢光粉層307且塗佈於凹槽315及其側壁,其中,螢光粉層307可為混合螢光粉於一如環氧樹脂(Epoxy)或矽膠(silicone)之封裝材料中;提供複數個LED晶粒301透過一黏接材料黏接於透明基底302a上,其中,每一LED晶粒301具有兩個電極301a、301b,並與其對應之兩電極引腳303a、303b隔開一距離,其情形如圖3(b)所示;提供複數組金屬線304,每一組金屬線304分別包含兩金屬線304a,304b對應地連接每一LED晶粒301之兩電極301a、301b至電極引腳303a、303b;然後,如圖3(c)所示,切割透明基底302a以形成多個發光二極體元件30,最後,如圖3(d)所示,以一封裝材料308包覆LED晶粒301、凹槽315、及/或透明基板302a上,由於透明基底302a以及LED晶粒301之間已先設有螢光粉層307,因此於本發明之一實施例中,更可選擇一含有與螢光粉層307相同之螢光粉之封裝材料308覆蓋於LED晶粒301曝露之部份,使LED晶粒301完全為包含螢光粉之封裝材料308所包覆。於本實施例,封裝材料308係完整覆蓋凹槽315之開口。與上述第一實施例不同,如此封裝材料308大致平整貼附於透明基底302a上並覆蓋LED晶粒301,有利於元件之薄化或後續若欲於其上施加光學元件之便利。其中,前述切割之步驟亦可於封裝材料308包覆發光二極體元件之後進行。 A second embodiment of the light-emitting diode element of the present invention is shown in FIG. 3, and this embodiment is a variation of the first embodiment. The method for forming a light-emitting diode device in this embodiment includes: as shown in FIG. 3 (a), providing a transparent substrate 302a including a transparent material, such as glass, sapphire (Al2O3), CVD diamond, and aluminum nitride (AlN). Forming a plurality of grooves 315; forming a plurality of electrode pins 303 on a transparent substrate, each group of electrode pins 303 respectively including two electrode pins 303a, 303b; forming a phosphor layer 307 on the transparent substrate 302a, and Coated on the groove 315 and its side wall, wherein the phosphor layer 307 may be a mixture of phosphor in a packaging material such as epoxy or silicone; a plurality of LED dies 301 are provided for transmission An adhesive material is adhered to the transparent substrate 302a, wherein each LED die 301 has two electrodes 301a, 301b, and is separated from its corresponding two electrode pins 303a, 303b by a distance, as shown in Figure 3 ( b); provide a plurality of metal lines 304, each group of metal lines 304 respectively includes two metal lines 304a, 304b correspondingly connect the two electrodes 301a, 301b of each LED die 301 to the electrode pins 303a, 303b; then As shown in FIG. 3 (c), the transparent substrate 302a is cut to form a plurality of light emitting diodes. Finally, as shown in FIG. 3 (d), the body element 30 is covered with a packaging material 308 on the LED die 301, the groove 315, and / or the transparent substrate 302a. The phosphor layer 307 has been provided first. Therefore, in one embodiment of the present invention, a packaging material 308 containing the same phosphor powder as the phosphor layer 307 can be selected to cover the exposed portion of the LED die 301. , So that the LED die 301 is completely covered by the encapsulating material 308 containing phosphor. In this embodiment, the packaging material 308 completely covers the opening of the groove 315. Different from the first embodiment described above, the packaging material 308 is substantially flat and adhered to the transparent substrate 302a and covers the LED die 301, which is beneficial to the thinning of the device or the convenience of applying an optical device on it. Wherein, the aforementioned cutting step may also be performed after the light-emitting diode element is covered by the encapsulating material 308.

因此,依本第二實施例可形成一發光二極體元件300包含:一透明基底302a包含一透明材料,如玻璃、藍寶石(Al2O3)、CVD鑽石、及氮化鋁(AlN),透明基底302a具有一凹槽315;一螢光粉層307在透明基底302a上且塗佈於凹槽315及其側壁;一組電極引腳303於透明基底302a上,包含兩電極引腳303a,303b; 一LED晶粒301置於透明基底302a上且位於凹槽315中,LED晶粒301與兩電極引腳303a,303b隔開一距離,且LED晶粒301具有兩個電極301a,301b;一組金屬線304,包含兩金屬線304a,304b對應地連接LED晶粒301之兩電極301a,301b至電極引腳303a,303b;及一封裝材料308包覆LED晶粒301、凹槽315、及/或透明基板302a上。封裝材料308例如為環氧樹脂(Epoxy)或矽膠(silicone)。此封裝材料308內可選擇性地散佈有螢光粉(圖未示),此螢光粉可與螢光粉層307中之螢光粉相同。 Therefore, according to the second embodiment, a light emitting diode device 300 can be formed. A transparent substrate 302a includes a transparent material, such as glass, sapphire (Al2O3), CVD diamond, and aluminum nitride (AlN). The transparent substrate 302a It has a groove 315; a phosphor layer 307 on the transparent substrate 302a and is coated on the groove 315 and its side wall; a set of electrode pins 303 on the transparent substrate 302a includes two electrode pins 303a, 303b; An LED die 301 is placed on the transparent substrate 302a and located in the groove 315. The LED die 301 is separated from the two electrode pins 303a and 303b by a distance, and the LED die 301 has two electrodes 301a and 301b; The metal line 304 includes two metal lines 304a, 304b correspondingly connecting the two electrodes 301a, 301b of the LED die 301 to the electrode pins 303a, 303b; and a packaging material 308 covering the LED die 301, the groove 315, and / Or on a transparent substrate 302a. The packaging material 308 is, for example, epoxy or silicon. A fluorescent powder (not shown) can be selectively dispersed in the packaging material 308, and the fluorescent powder can be the same as the fluorescent powder in the fluorescent powder layer 307.

本發明之發光二極體元件之第三實施例如圖4所示。本實施例之發光二極體元件之形成方法包含:如圖4(a)所示,提供一第一透明基底402a包含一透明材料,此透明材料可以為如玻璃、藍寶石(Al2O3)、CVD鑽石、及氮化鋁(AlN);提供複數個LED晶粒401並將其固定於第一透明基底402a上,每一LED晶粒401具有兩個電極401a,401b;如圖4(b)所示,提供一第二透明基底402b包含一透明材料,此透明材料之選擇可如上述第一透明基底402a,且可與第一透明基底402a相同或不同;形成複數組電極引腳403於第二透明基底402b上,每一組電極引腳403分別包含兩電極引腳403a,403b;接著,如圖4(c)所示,將第一透明基底402a與第二透明基底402b對位接合,使每一LED晶粒401之兩個電極401a,401b分別與兩電極引腳403b,403a接觸;切割接合之第一透明基底402a與第二透明基底402b以形成多個發光二極體元件40,最後,如圖4(d)所示,以一封裝材料405,例如環氧樹脂(Epoxy)或矽膠(silicone)封裝於每一元件40外圍,即封裝材料405包覆接合之第一透明基底402a與第二透明基底402b,並露出部份之兩電極引腳403a,403b,此環氧樹脂或矽膠內可選擇性地散佈有螢光粉(圖未示)。另外,此第一透明基底402a對於每一LED晶粒401亦可選擇性地先形成一供LED晶粒401置放之凹槽(圖未示),使LED晶粒401置放於其中。 A third embodiment of the light emitting diode device of the present invention is shown in FIG. 4. The method for forming the light-emitting diode element of this embodiment includes: as shown in FIG. 4 (a), providing a first transparent substrate 402a including a transparent material, which can be, for example, glass, sapphire (Al2O3), CVD diamond And aluminum nitride (AlN); provide a plurality of LED die 401 and fix it on the first transparent substrate 402a, each LED die 401 has two electrodes 401a, 401b; as shown in Figure 4 (b) Provide a second transparent substrate 402b including a transparent material, the selection of this transparent material may be the same as the first transparent substrate 402a, and may be the same as or different from the first transparent substrate 402a; forming a plurality of array electrode pins 403 on the second transparent On the substrate 402b, each group of electrode pins 403 includes two electrode pins 403a and 403b, respectively. Next, as shown in FIG. 4 (c), the first transparent substrate 402a and the second transparent substrate 402b are aligned and bonded, so that each The two electrodes 401a, 401b of an LED die 401 are in contact with the two electrode pins 403b, 403a, respectively; the first transparent substrate 402a and the second transparent substrate 402b are cut and bonded to form a plurality of light emitting diode elements 40. Finally, As shown in FIG. 4 (d), a packaging material 405, such as An epoxy resin or silicone is packaged on the periphery of each element 40. That is, the packaging material 405 covers the first transparent substrate 402a and the second transparent substrate 402b, and exposes two electrode pins 403a, 403b. Fluorescent powder can be selectively dispersed in this epoxy resin or silicone (not shown). In addition, the first transparent substrate 402a can also selectively form a recess (not shown) for the LED die 401 for each LED die 401, so that the LED die 401 is placed therein.

因此,依本第三實施例可形成一發光二極體元件400包含:一第一透明基底402a包含一透明材料,如玻璃、藍寶石(Al2O3)、CVD鑽石、及氮化鋁(AlN);一第二透明基底402b包含一透明材料,如玻璃、藍寶石(Al2O3)、CVD鑽石、及氮化鋁(AlN),第二透明基底402b連接於第一透明基底402a;一組電極引腳403包含兩電極引腳403a,403b,介於該第一透明基底與該第二透明基底之間;及一LED晶粒401具有兩個電極401a,401b,置於第一透明基底402a與第二透明基底402b之間,其中,LED晶粒401之兩個電極401a,401b對應地連接於兩電極引腳403a,403b。 Therefore, according to the third embodiment, a light-emitting diode element 400 can be formed. A first transparent substrate 402a includes a transparent material, such as glass, sapphire (Al2O3), CVD diamond, and aluminum nitride (AlN). The second transparent substrate 402b includes a transparent material, such as glass, sapphire (Al2O3), CVD diamond, and aluminum nitride (AlN). The second transparent substrate 402b is connected to the first transparent substrate 402a. A set of electrode pins 403 includes two Electrode pins 403a and 403b are interposed between the first transparent substrate and the second transparent substrate; and an LED die 401 has two electrodes 401a and 401b placed on the first transparent substrate 402a and the second transparent substrate 402b. Among them, the two electrodes 401a, 401b of the LED die 401 are correspondingly connected to the two electrode pins 403a, 403b.

本發明之發光二極體元件之第四實施例如圖5所示,包含一「自散熱」(”self-heat dissipating”)之設計。本實施例可以前述第一至第三實施例中之任一為基礎,結合本實施例之自散熱層結構以提高發光二極體元件之散熱效率。本實施例之發光二極體元件之形成方法包含:如圖5(a)所示,提供一透明基底502a包含一透明材料,透明基底502a可以例如是前述各實施例中之透明基底202a、透明基底302a、第一透明基底402a、及第二透明基底402b中之任一,於透明基底502a上形成一自散熱層509包含一透明高導熱材料(例如熱導率Thermal Conductivity>100W/mK),此材料可兼具有高熱輻射之特性。自散熱層509形成於透明基底502a上可提高發光元件之散熱效率。自散熱層509可以為導電材料,例如為薄金屬或合金或含碳之導電材料。薄金屬或合金可選用錫(Sn)、鋁(Al)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、錫(Pb)、銅(Cu)、鎳(Ni)、或上述金屬之合金。含碳之導電材料可為包含碳組成接近或等於100%之導電材料,例如石墨烯(Graphene)。於一實施例中,自散熱層509包含非導電材料,例如含碳之非導電材料可為碳組成接近或等於100%之非導電材料,例如鑽石或類鑽碳(Diamond-like Carbon;DLC)。此自散熱層509可以為整層形成於透明基底502a上,或如圖5(a)所示,以例如微影蝕刻方法,形成複數之條紋圖案509Y,或如圖 5(b)所示,形成網狀圖案,包括複數之縱向條紋圖案509Y及複數之橫向條紋圖案509X。以第一或第二實施例中之任一為例,則如同圖5(c)所示,一樣形成電極引腳503a,503b於透明基底502a上,並如前述所示,依序完成各步驟如圖5(d)所示。須注意的是,當自散熱層509為導電材料時,為避免短路,可形成一絕緣層510於透明基底502a與LED晶粒501之間,以電性隔絕自散熱層509與LED晶粒501。相對於傳統封裝技術在導線架(lead frame)、金屬打線、固晶材料等方向思索解決散熱問題,但其效果未必良好。本發明自散熱層結構結合於前述各實施例之透明基底上,提供發光二極體元件較大之散熱面積及良好之散熱機制(與空氣接觸之傳導及對流),具有極佳之散熱效益。另外,當自散熱層為導電材料且形成如圖5(a)之複數之條紋圖案509Y時,部份之線條紋圖案509Y亦可選擇性地與電極引腳503a,503b相接觸,提供另一經由電極引腳503a,503b散熱之散熱路徑;當自散熱層為非導電材料時,例如鑽石,因無須考量短路問題,則不論自散熱層之圖形,自散熱層自亦可選擇性地與電極引腳503a,503b相接觸。 A fourth embodiment of the light-emitting diode element of the present invention is shown in FIG. 5 and includes a “self-heat dissipating” design. This embodiment may be based on any one of the first to third embodiments described above, and combined with the self-heat dissipation layer structure of this embodiment to improve the heat dissipation efficiency of the light emitting diode element. The method for forming a light-emitting diode element in this embodiment includes: as shown in FIG. 5 (a), providing a transparent substrate 502a including a transparent material. The transparent substrate 502a may be, for example, the transparent substrate 202a, the transparent substrate in the foregoing embodiments. Any one of the substrate 302a, the first transparent substrate 402a, and the second transparent substrate 402b, forming a self-radiating layer 509 on the transparent substrate 502a including a transparent and highly thermally conductive material (for example, Thermal Conductivity> 100W / mK), This material can have the characteristics of high heat radiation. Forming the self-heat dissipation layer 509 on the transparent substrate 502a can improve the heat dissipation efficiency of the light emitting element. The self-radiating layer 509 may be a conductive material, such as a thin metal or alloy or a carbon-containing conductive material. Thin metals or alloys can be selected from tin (Sn), aluminum (Al), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), tin (Pb), copper (Cu) , Nickel (Ni), or an alloy of the above metals. The carbon-containing conductive material may be a conductive material containing a carbon composition close to or equal to 100%, such as Graphene. In one embodiment, the self-heat dissipation layer 509 includes a non-conductive material. For example, the non-conductive material containing carbon may be a non-conductive material with a carbon composition close to or equal to 100%, such as diamond or diamond-like carbon (DLC). . The self-radiating layer 509 may be formed on the transparent substrate 502a as a whole, or a plurality of stripe patterns 509Y may be formed by, for example, a lithographic etching method as shown in FIG. 5 (a), or as shown in FIG. As shown in 5 (b), a mesh pattern is formed, including a plurality of vertical stripe patterns 509Y and a plurality of horizontal stripe patterns 509X. Taking any of the first or second embodiments as an example, as shown in FIG. 5 (c), the electrode pins 503a and 503b are formed on the transparent substrate 502a, and the steps are sequentially completed as shown in the foregoing. As shown in Figure 5 (d). It should be noted that when the self-heat dissipation layer 509 is a conductive material, in order to avoid short circuit, an insulating layer 510 may be formed between the transparent substrate 502a and the LED die 501 to electrically isolate the self-heat dissipation layer 509 and the LED die 501. . Compared with the traditional packaging technology, thinking about solving the heat dissipation problem in the direction of lead frame, metal wire bonding, solid crystal materials, etc., but its effect may not be good. The self-heating layer structure of the present invention is combined with the transparent substrates of the foregoing embodiments to provide a large heat dissipation area of the light emitting diode element and a good heat dissipation mechanism (conduction and convection in contact with air), which has excellent heat dissipation benefits. In addition, when the self-radiating layer is a conductive material and forms a plurality of stripe patterns 509Y as shown in FIG. 5 (a), some of the line stripe patterns 509Y can also selectively contact the electrode pins 503a and 503b, providing another Heat dissipation path for heat dissipation through electrode pins 503a, 503b; when the self-heat-dissipating layer is a non-conductive material, such as diamond, there is no need to consider the short-circuit problem, regardless of the pattern of the self-heat-dissipating layer, the self-heat-dissipating layer can also selectively communicate with the electrode The pins 503a and 503b are in contact.

本發明第五實施例如圖6所示,並可結合應用於前述第一至第四實施例中。如圖6(a)所示前述各實施例均可將各發光二極體元件中之LED晶粒數目調整至包括兩個或兩個以上之LED晶粒,例如同時設置藍光LED晶粒601與紅光LED晶粒601’於一發光二極體元件中,其中藍光LED晶粒601的部份可以如前述第二實施例中,在透明基底602a、602b分別形成凹槽(圖未示)並塗佈黃色螢光粉(圖未示),以達成暖白光之發光二極體元件60。另外,如圖6(b)所示,亦可以在發光二極體元件600(為一發光二極體元件,例如前述第二或第三實施例之側視圖)之透明基底外圍再設置光學元件611,包括光學元件611a或光學元件611b中任一或兩者,其中光學元件611a及611b包含半球體夾置發光二極體元件600之相對側,增加發光二極體元件600之出光效率。 A fifth embodiment of the present invention is shown in FIG. 6 and can be applied in combination with the foregoing first to fourth embodiments. As shown in FIG. 6 (a), in the foregoing embodiments, the number of LED dies in each light-emitting diode element can be adjusted to include two or more LED dies. For example, the blue LED dies 601 and The red LED chip 601 'is in a light-emitting diode device, and a part of the blue LED chip 601 can be formed in the transparent substrates 602a and 602b (not shown in the figure) respectively as in the aforementioned second embodiment, and The yellow phosphor (not shown) is coated to achieve a light emitting diode element 60 with warm white light. In addition, as shown in FIG. 6 (b), an optical element may also be provided on the periphery of the transparent substrate of the light emitting diode element 600 (which is a light emitting diode element, such as the side view of the aforementioned second or third embodiment). 611 includes any one or both of an optical element 611a or an optical element 611b, where the optical elements 611a and 611b include opposite sides of a light-emitting diode element 600 sandwiched by a hemisphere to increase the light-emitting efficiency of the light-emitting diode element 600.

本發明第六實施例如圖7所示,本實施例之發光二極體元件之形成方法包含:如圖7(a)所示,提供一透明基底702a包含一透明材料,此透明材料之選擇可如第一實施例中透明基底202a所述;如圖7(b)左方所示,在透明基底702a上形成一自散熱層709,包含一透明高導熱材料,並可兼具有高熱輻射之特性。基於避免短路之考量,本實施例之自散熱層為非導電材料,例如含碳之非導電材料可為碳組成接近或等於100%之非導電材料,例如鑽石或類鑽碳(Diamond-like Carbon)。然後在透明基底702a上形成複數組電極引腳703於自散熱層709上,每一組電極引腳703分別包含兩電極引腳703a,703b;此複數組電極引腳703可由例如以蒸鍍等方法形成之一金屬層,再以微影蝕刻方法,形成複數組電極引腳703;接著,如圖7(b)右方所示,提供複數個LED晶粒701設置於一基板712上,基板712於一實施例係為一藍膜(blue tape)。將透明基底702a與基板712對位接合,使每一LED晶粒701的兩個電極701a,701b分別與兩電極引腳703b,703a接觸並固定於透明基底702a上,並使LED晶粒701與基板712分離,其中,基板712如為藍膜(blue tape),可加熱藍膜使其黏性降低而與LED晶粒701分離,其結果如圖7(c)所示;然後切割與LED晶粒701接合之透明基底702a以形成多個發光二極體元件70,如圖7(d)左方所示,最後以一封裝材料708,例如環氧樹脂(Epoxy)或矽膠(silicone)封裝於每一元件70外圍,形成如圖7(d)右方所示之發光二極體元件700,此環氧樹脂或矽膠內亦可選擇性地散佈有螢光粉(圖未示)。另外,此透明基底702a對於每一LED晶粒701亦可選擇性地先形成一供LED晶粒701置放之凹槽(圖未示),使LED晶粒701置放於其中,甚至如圖3之第二實施例,亦可使上述螢光粉佈於凹槽中且使LED晶粒701置放於凹槽中且位於螢光粉上。 A sixth embodiment of the present invention is shown in FIG. 7. The method for forming a light-emitting diode element in this embodiment includes: as shown in FIG. 7 (a), providing a transparent substrate 702a including a transparent material. The choice of this transparent material may be As described in the transparent substrate 202a in the first embodiment; as shown in the left side of FIG. 7 (b), a self-heat-dissipating layer 709 is formed on the transparent substrate 702a, which contains a transparent and highly thermally conductive material and can also have high heat radiation. characteristic. Based on the consideration of avoiding short circuit, the self-radiating layer in this embodiment is a non-conductive material. For example, the non-conductive material containing carbon may be a non-conductive material with a carbon composition close to or equal to 100%, such as diamond or diamond-like carbon. ). Then, a plurality of electrode pins 703 are formed on the transparent substrate 702a on the self-radiating layer 709. Each group of electrode pins 703 includes two electrode pins 703a and 703b, respectively. A metal layer is formed by a method, and then a plurality of electrode pins 703 are formed by a lithography etching method. Then, as shown in the right side of FIG. 7 (b), a plurality of LED dies 701 are provided on a substrate 712. 712 is a blue tape in one embodiment. The transparent substrate 702a and the substrate 712 are bonded to each other, so that the two electrodes 701a, 701b of each LED die 701 are in contact with the two electrode pins 703b, 703a and fixed on the transparent substrate 702a, and the LED die 701 and The substrate 712 is separated. If the substrate 712 is a blue tape, the blue film can be heated to reduce its viscosity and be separated from the LED die 701. The result is shown in FIG. 7 (c); The transparent substrate 702a bonded to the particles 701 to form a plurality of light emitting diode elements 70, as shown in the left side of FIG. 7 (d), and finally encapsulated in a packaging material 708, such as epoxy or silicone. A light emitting diode element 700 is formed on the periphery of each element 70 as shown in the right side of FIG. 7 (d). A fluorescent powder (not shown) can also be selectively dispersed in the epoxy resin or the silicone. In addition, the transparent substrate 702a can also selectively form a recess (not shown) for the LED die 701 for each LED die 701, so that the LED die 701 is placed therein, even as shown in FIG. In the second embodiment of 3, the above phosphor powder can also be placed in the groove and the LED die 701 can be placed in the groove and located on the phosphor.

如圖7(e)所示,本實施例之發光二極體元件700可與一載體(carrier)720相配合使用。此載體720包含一基座(base)721,及兩外部電源接腳722a,722b固定於基座721,其中基座721包含有一凹槽(socket)723可供本實施例 之發光二極體元件700插入固定。兩外部電源接腳722a,722b分別各自有一延伸部設置於凹槽723中,形成兩電源供應墊(power supply pad)722a’,722b’,當發光二極體元件700插入凹槽723中時,其兩電極引腳703a,703b分別與兩電源供應墊722a’,722b’相接觸,故而外部電源可由兩外部電源接腳722a,722b經由兩電源供應墊722a’,722b’而供應給發光二極體元件700。除此之外,基座721亦可設計成一散熱器(heat sink)包含一高導熱材料,故而如同圖5之第四實施例所提及,除了自散熱層709於透明基底702a上,可提供良好之散熱路徑外,由於自散熱層709與兩電極引腳703a,703b接觸,又兩電極引腳703a,703b與兩電源供應墊722a’,722b’接觸,又兩電源供應墊722a’,722b’設於凹槽723中並與基座721接觸,故當基座721設計成一散熱器時,以上將形成另一散熱路徑,有助於散熱。而設計上,亦可使自熱散層709插於凹槽723中時直接與基座721接觸形成一散熱路徑。 As shown in FIG. 7 (e), the light-emitting diode element 700 of this embodiment can be used in conjunction with a carrier 720. The carrier 720 includes a base 721 and two external power pins 722a and 722b fixed to the base 721. The base 721 includes a socket 723 for this embodiment. The light emitting diode element 700 is inserted and fixed. The two external power pins 722a and 722b respectively have an extension portion disposed in the groove 723 to form two power supply pads 722a 'and 722b'. When the light emitting diode element 700 is inserted into the groove 723, The two electrode pins 703a, 703b are in contact with the two power supply pads 722a ', 722b', respectively, so the external power can be supplied to the light emitting diodes by the two external power supply pins 722a, 722b through the two power supply pads 722a ', 722b'.体 Element700. In addition, the base 721 can also be designed as a heat sink containing a highly thermally conductive material, so as mentioned in the fourth embodiment of FIG. 5, in addition to the self-heat dissipation layer 709 on the transparent substrate 702a, it can provide In addition to a good heat dissipation path, since the self-heat dissipation layer 709 is in contact with the two electrode pins 703a, 703b, and the two electrode pins 703a, 703b are in contact with the two power supply pads 722a ', 722b', and the two power supply pads 722a ', 722b 'It is set in the groove 723 and is in contact with the base 721, so when the base 721 is designed as a heat sink, the above will form another heat dissipation path, which is helpful for heat dissipation. In design, the self-heat dissipating layer 709 can also directly contact the base 721 to form a heat dissipation path when inserted in the groove 723.

本實施例之發光二極體元件700具有垂直及插拔式之特徵,故除了上述優點外,由於此垂直之特徵,即發光二極體元件700插於凹槽723時LED晶粒701係與載體720上表面S垂直,提供發光二極體元件700較大之散熱面積及良好之散熱機制(與空氣接觸之傳導及對流),特別是自散熱層709設置於透明基底702a上所帶來之散熱效益。以一般之LED晶粒而言,其發光二極體係由p型與n型半導體層間夾置主動層(active layer)堆疊構成,主要發光面即一垂直於p型半導體層、主動層、及n型半導體層堆疊方向之平面;或以出光量來看,一般LED晶粒之側面出光量約小於總出光量之20%,故主要發光面之出光量約大於總出光量之80%,或若為雙面出光則為約大於總出光量之40%,即主要發光面之出光量至少約大於一發光二極體總出光量之30%。故以本實施例而言,LED晶粒701之主要發光面(垂直於p型半導體層、主動層、及n型半導體層堆疊方向之平面,或出光量至少約大於一發光二極體總出光量之30%之平面)即大致垂直於載體720上 表面S,而與周遭空氣有較大之接觸面積,有助於散熱。而插拔式之設計省去打線(bonding)之製程成本並使修繕具有彈性。 The light-emitting diode element 700 of this embodiment has vertical and plug-in characteristics, so in addition to the above-mentioned advantages, due to this vertical feature, that is, when the light-emitting diode element 700 is inserted into the groove 723, the LED die 701 is connected with The upper surface S of the carrier 720 is vertical, which provides a large heat dissipation area of the light emitting diode element 700 and a good heat dissipation mechanism (conduction and convection in contact with air), especially brought by the heat dissipation layer 709 provided on the transparent substrate 702a. Thermal benefits. In terms of general LED die, the light emitting diode system is composed of an active layer stack sandwiched between p-type and n-type semiconductor layers. The main light-emitting surface is a vertical to the p-type semiconductor layer, the active layer, and n. Plane of the direction of stacking of semiconductor-type semiconductor layers; or in terms of light output, the light output from the side of a general LED die is less than 20% of the total light output, so the light output of the main light emitting surface is greater than 80% of the total light output, or if For double-sided light output, it is greater than about 40% of the total light output, that is, the light output of the main light emitting surface is at least about 30% of the total light output of a light emitting diode. Therefore, in this embodiment, the main light-emitting surface of the LED die 701 (a plane perpendicular to the stacking direction of the p-type semiconductor layer, the active layer, and the n-type semiconductor layer), or the amount of light output is at least approximately greater than the total output of a light-emitting diode. 30% of the amount of light) is roughly perpendicular to the carrier 720 The surface S has a large contact area with the surrounding air, which helps to dissipate heat. The plug-in design eliminates the cost of bonding and makes the repair flexible.

因此,如圖7(d)右方所示,依本第六實施例可形成一發光二極體元件700包含:一透明基底702a包含一透明材料,如玻璃、藍寶石(Al2O3)、CVD鑽石、及氮化鋁(AlN);一自散熱層709包括一透明高導熱材料於透明基底702a上;一組電極引腳703於自散熱層709上,電極引腳703包含兩電極引腳703a,703b;一LED晶粒701置於透明基底702a上且位於自散熱層709上,LED晶粒701具有兩個電極701a,701b對應地連接至電極引腳703b,703a;及一封裝材料708,例如環氧樹脂(Epoxy)或矽膠(silicone)封裝於元件70外圍,封裝材料708包覆LED晶粒701及/或透明基板702a。 Therefore, as shown in the right side of FIG. 7 (d), a light emitting diode element 700 according to the sixth embodiment may include: a transparent substrate 702a including a transparent material, such as glass, sapphire (Al2O3), CVD diamond, And aluminum nitride (AlN); a self-radiating layer 709 includes a transparent and highly thermally conductive material on a transparent substrate 702a; a set of electrode pins 703 on the self-radiating layer 709, and the electrode pins 703 include two electrode pins 703a, 703b An LED die 701 is placed on the transparent substrate 702a and is located on the self-radiating layer 709, the LED die 701 has two electrodes 701a, 701b correspondingly connected to the electrode pins 703b, 703a; and a packaging material 708, such as a ring An epoxy resin or silicone is packaged on the periphery of the element 70, and the packaging material 708 covers the LED die 701 and / or the transparent substrate 702a.

而相對於傳統之光源設備,本發明之垂直設計可有效改善水平方向之光場並減少應用上體積或厚度之問題。以應用於顯示設備之背光模組(Backlight)為例,圖8所示為一習知之背光模組。因為使用一般習知之發光二極體元件800,其封裝往往使光場偏於垂直出光,即在垂直方向(如圖中實線箭頭方向)有相對較多之出光。而為使照明面821有較均勻之光分佈,則須仰賴另行增設如圖所示之光學元件831以調整光場,使部份出光轉為水平方向(如圖中虛線箭頭),而造成背光模組整體厚度h因光學元件831而變厚,且體積增加。相對地,當本發明之發光二極體元件應用於光源設備時,如圖9之本發明第七實施例所示,上述圖7之發光二極體元件700應用於如背光模組(Backlight)900時,因為透明基底及垂直狀態之設計,故在水平方向有良好出光。在圖9中每一發光二極體元件700垂直插入固定於載體(carrier)920上之一凹槽923,且其光場如圖中光場情形930所示,由於透明基底及垂直狀態設計,故在水平方向有良好出光,不需再增設任何光學元件即可在水平方向有均勻之光分佈。故而背光模組整體厚度大致僅為h’之晶粒之大小等級。載體(carrier)920之設計大致為如圖7(e)之載體 (carrier)720所示,值得注意的是,載體(carrier)920上發光二極體元件700之配置可以交錯之方式配置,如以一個二維之笛卡兒座標系(two-dimensional Cartesian coordinate system)來說明,載體(carrier)920上凹槽923所在之平面S可以一虛擬之x座標及y座標來說明其上任一點之位置,即(xi,yj),其中i,j為實數。如圖所示之x1,x2,x3…及y1,y2,y3…等可標示出其上各發光二極體元件700之位置,則如圖所示,x1(及x3)上之兩個發光二極體元件與x2上之兩個發光二極體元件位在交錯之y軸位置(即x1(及x3)上之兩個發光二極體元件在y1及y3,而x2上之兩個發光二極體元件在y2及y4),或換句話說,有三個發光二極體元件分別大致位在(x1,y1),(x2,y2),(x3,y1)之位置,而大致在(x2,y1)之位置上並沒有配置發光二極體元件,因為如圖所示,(x2,y1)之位置可由大致位在(x2,y2)之位置之發光二極體元件所發出之光將其補足,如此之配置可進一步讓水平方向之光分佈更均勻。 Compared with the traditional light source equipment, the vertical design of the present invention can effectively improve the light field in the horizontal direction and reduce the problem of volume or thickness in the application. Taking a backlight module (Backlight) applied to a display device as an example, FIG. 8 shows a conventional backlight module. Because the conventionally used light emitting diode element 800 is used, its package tends to bias the light field to vertical light, that is, there is relatively more light emitted in the vertical direction (the direction of the solid arrow in the figure). In order to make the lighting surface 821 have a more uniform light distribution, it is necessary to rely on the addition of an optical element 831 as shown in the figure to adjust the light field, so that part of the light is turned to the horizontal direction (as shown by the dotted arrow in the figure), resulting in a backlight. The overall thickness h of the module becomes thicker due to the optical element 831, and the volume increases. In contrast, when the light-emitting diode element of the present invention is applied to a light source device, as shown in the seventh embodiment of the present invention, the light-emitting diode element 700 of FIG. 7 is applied to, for example, a backlight module. At 900 hours, due to the design of the transparent substrate and vertical state, there is good light output in the horizontal direction. In FIG. 9, each light-emitting diode element 700 is vertically inserted into a groove 923 fixed on a carrier 920, and its light field is shown in the light field situation 930 in the figure. Due to the transparent substrate and vertical state design, Therefore, there is good light output in the horizontal direction, and no additional optical element is needed to have a uniform light distribution in the horizontal direction. Therefore, the overall thickness of the backlight module is roughly only the size of the crystal grains of h '. The design of the carrier 920 is roughly the carrier shown in Figure 7 (e) (carrier) 720, it is worth noting that the arrangement of the light-emitting diode elements 700 on the carrier 920 can be arranged in a staggered manner, such as a two-dimensional Cartesian coordinate system ), The plane S where the groove 923 on the carrier 920 is located can be a virtual x-coordinate and y-coordinate to describe the position of any point on it, namely (xi, yj), where i, j are real numbers. As shown in the figure, x1, x2, x3 ..., and y1, y2, y3, etc. can indicate the positions of the light-emitting diode elements 700 thereon. As shown in the figure, two light-emitting diodes on x1 (and x3) emit light. The diode element and the two light-emitting diode elements on x2 are located at the staggered y-axis position (that is, the two light-emitting diode elements on x1 (and x3) are on y1 and y3, and the two light-emitting diodes on x2 are light-emitting The diode elements are at y2 and y4), or in other words, there are three light-emitting diode elements at approximately (x1, y1), (x2, y2), (x3, y1), and approximately ( x2, y1) is not equipped with a light-emitting diode element, because as shown in the figure, the position of (x2, y1) can be emitted by the light-emitting diode element roughly located at (x2, y2) Complementing it, such a configuration can further make the light distribution in the horizontal direction more uniform.

因此,依本第七實施例可形成一光源設備,例如為一背光模組(Backlight)900包含:一第一發光二極體元件;一第二發光二極體元件;一第三發光二極體元件,一載體920具有一第一表面S,第一發光二極體元件、第二發光二極體元件、及一第三發光二極體元件均設於第一表面S上且其配置係以一交錯之方式配置,第一表面S以一二維之笛卡兒座標系(two-dimensional Cartesian coordinate system)包含一虛擬之x座標及y座標(xi,yj),其中i,j為實數以表示其上任一點之位置,第一、第二、及第三發光二極體元件分別大致在(x1,y1),(x2,y2),(x3,y1)之位置,而大致在(x2,y1)之位置上並沒有配置發光二極體元件。 Therefore, according to the seventh embodiment, a light source device can be formed, for example, a backlight module (Backlight) 900 includes: a first light emitting diode element; a second light emitting diode element; a third light emitting diode A carrier element 920 has a first surface S, the first light-emitting diode element, the second light-emitting diode element, and a third light-emitting diode element are all disposed on the first surface S and their arrangement is Arranged in a staggered manner, the first surface S includes a virtual x-coordinate and y-coordinate (xi, yj) in a two-dimensional Cartesian coordinate system, where i, j are real numbers To indicate the position of any point on it, the first, second, and third light-emitting diode elements are respectively approximately at (x1, y1), (x2, y2), (x3, y1), and approximately at (x2 , y1) is not provided with a light emitting diode element.

於上述各不同實施例中,具有相同功用之元件於各實施例雖具有不同之圖示標號,其具有之物理、化學、或電學等特性,除非於各別實施例有特別限定,應認為具有相同或類似相關特性,而勿須於各實施例一一贅述。 In the above-mentioned different embodiments, although the components having the same function have different icon numbers in each embodiment, they have physical, chemical, or electrical characteristics. The same or similar related features need not be described in detail in each embodiment.

上述實施例僅為例示性說明本發明之原理及其功效,而非用於限制本發明。任何本發明所屬技術領域中具有通常知識者均可在不違背本發明之 技術原理及精神的情況下,對上述實施例進行修改及變化。因此本發明之權利保護範圍如後述之申請專利範圍所列。 The above-mentioned embodiments are merely illustrative for explaining the principle of the present invention and its effects, and are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field to which the present invention pertains can do so without departing from the invention. In the case of technical principles and spirits, the above embodiments are modified and changed. Therefore, the scope of protection of the rights of the present invention is listed in the scope of patent application described below.

Claims (10)

一種光源設備包含: 一載體,具有一表面,該表面具有x軸以及與該x軸垂直的y軸; 一第一發光二極體元件設置在該表面上,該第一發光二極體元件包含:  一第一主出光面,以及  一第一LED晶粒,具有兩個電極以及一第一表面,且該兩個電極設置於該第一表面上,其中,該第一主出光面大致垂直於該表面; 一第二發光二極體元件設置在該表面上; 一第三發光二極體元件設置在該表面上;以及 一第四發光二極體元件設置在該表面上, 其中,該第一發光二極體元件與該第二發光二極體元件在x軸的方向上重疊, 該第三發光二極體元件以及該第四發光二極體元件在x軸的方向上重疊,以及 該第一發光二極體元件,該第二發光二極體元件,該第三發光二極體元件以及該第四發光二極體元件在該y軸的方向上彼此不重疊。A light source device includes: a carrier having a surface having an x-axis and a y-axis perpendicular to the x-axis; a first light-emitting diode element is disposed on the surface, and the first light-emitting diode element includes : A first main light emitting surface and a first LED die having two electrodes and a first surface, and the two electrodes are disposed on the first surface, wherein the first main light emitting surface is substantially perpendicular to The surface; a second light-emitting diode element is disposed on the surface; a third light-emitting diode element is disposed on the surface; and a fourth light-emitting diode element is disposed on the surface, wherein the first A light-emitting diode element and the second light-emitting diode element overlap in the x-axis direction, the third light-emitting diode element and the fourth light-emitting diode element overlap in the x-axis direction, and the The first light-emitting diode element, the second light-emitting diode element, the third light-emitting diode element, and the fourth light-emitting diode element do not overlap each other in the direction of the y-axis. 如申請專利範圍第1項所述之發光模組,更包含一第一封裝材料,覆蓋該第一發光二極體元件。The light-emitting module described in item 1 of the patent application scope further includes a first packaging material covering the first light-emitting diode element. 如申請專利範圍第2項所述之發光模組,其中,該第一封裝材料包含螢光粉。The light-emitting module according to item 2 of the scope of patent application, wherein the first packaging material includes a fluorescent powder. 如申請專利範圍第1項所述之發光二極體元件之發光模組,其中,該第二發光二極體元件包含一第二主出光面且該第二主出光面大致垂直於該表面。The light-emitting module of the light-emitting diode element according to item 1 of the patent application scope, wherein the second light-emitting diode element includes a second main light-emitting surface and the second main light-emitting surface is substantially perpendicular to the surface. 如申請專利範圍第1項所述之發光模組,其中,該載體包含一基座,及兩外部電源接腳固定於該基座上。The light-emitting module according to item 1 of the scope of patent application, wherein the carrier includes a base and two external power pins are fixed on the base. 如申請專利範圍第5項所述之發光模組,其中,該基座包含一凹槽,以提供該第一發光二極體元件插入。The light-emitting module according to item 5 of the patent application scope, wherein the base includes a groove to provide insertion of the first light-emitting diode element. 如申請專利範圍第1項所述之發光模組,其中,該第一發光二極體元件更包含兩電極引腳分別與該兩個電極接觸。The light-emitting module according to item 1 of the patent application scope, wherein the first light-emitting diode element further includes two electrode pins in contact with the two electrodes, respectively. 如申請專利範圍第1項所述之發光模組,其中,該第一發光二極體元件更包含一透明基底,該第一LED晶粒形成在該透明基底之上。The light-emitting module according to item 1 of the patent application scope, wherein the first light-emitting diode element further includes a transparent substrate, and the first LED die is formed on the transparent substrate. 如申請專利範圍第8項所述之發光模組,其中,該第一發光二極體元件更包含一散熱層於該透明基底上。The light emitting module according to item 8 of the scope of patent application, wherein the first light emitting diode element further includes a heat dissipation layer on the transparent substrate. 如申請專利範圍第8項所述之發光模組,其中,該第一發光二極體元件包含一螢光粉,該透明基底具有一凹槽且該螢光粉位於凹槽內。The light-emitting module according to item 8 of the scope of patent application, wherein the first light-emitting diode element includes a fluorescent powder, the transparent substrate has a groove, and the fluorescent powder is located in the groove.
TW107108679A 2013-02-08 2013-08-22 Light-emitting device and manufacturing method thereof TWI660527B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
??102105539 2013-02-08
TW102105539 2013-02-08

Publications (2)

Publication Number Publication Date
TW201820663A TW201820663A (en) 2018-06-01
TWI660527B true TWI660527B (en) 2019-05-21

Family

ID=63258064

Family Applications (2)

Application Number Title Priority Date Filing Date
TW107108679A TWI660527B (en) 2013-02-08 2013-08-22 Light-emitting device and manufacturing method thereof
TW108112324A TWI756532B (en) 2013-02-08 2013-08-22 Light-emitting device and manufacturing method thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW108112324A TWI756532B (en) 2013-02-08 2013-08-22 Light-emitting device and manufacturing method thereof

Country Status (1)

Country Link
TW (2) TWI660527B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060157724A1 (en) * 2004-12-21 2006-07-20 Yusuke Fujita Light-emitting diode, backlight device and method of manufacturing the light-emitting diode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI301729B (en) * 2005-12-02 2008-10-01 Au Optronics Corp Dual emission display
TWM391158U (en) * 2010-03-09 2010-10-21 Ledgend Tech Inc Three-dimensional light source display device
KR101039994B1 (en) * 2010-05-24 2011-06-09 엘지이노텍 주식회사 Light emitting device and light unit having thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060157724A1 (en) * 2004-12-21 2006-07-20 Yusuke Fujita Light-emitting diode, backlight device and method of manufacturing the light-emitting diode

Also Published As

Publication number Publication date
TW201820663A (en) 2018-06-01
TWI756532B (en) 2022-03-01
TW201926747A (en) 2019-07-01

Similar Documents

Publication Publication Date Title
US7473933B2 (en) High power LED package with universal bonding pads and interconnect arrangement
CN103560127B (en) Optical device and method for manufacturing same
US8445928B2 (en) Light-emitting diode light source module
US20050247944A1 (en) Semiconductor light emitting device with flexible substrate
TWI645580B (en) Light emitting diode crystal grain and display using the same
TW200522395A (en) Power surface mount light emitting die package
US9293663B1 (en) Light-emitting unit and semiconductor light-emitting device
JP2015144147A (en) LED module
TWI532221B (en) Light emitting unit and light emitting module
US20100084673A1 (en) Light-emitting semiconductor packaging structure without wire bonding
US10680140B2 (en) Light-emitting device and manufacturing method thereof
JP6210720B2 (en) LED package
TWI660527B (en) Light-emitting device and manufacturing method thereof
KR101166066B1 (en) Light Emitting Diode Package
TW201532316A (en) Package structure and manufacturing method thereof
US9559273B2 (en) Light-emitting package structure and method of fabricating the same
US10825974B2 (en) Light-emitting diode package and method of manufacture
TW201336114A (en) Semiconductor package and method of forming same
KR101437930B1 (en) Light emitting device and method of manufacturing the same
GB2551154B (en) Light-emitting diode package and method of manufacture
TWI658614B (en) Light emitting diode module package structure having thermal-electric separated function
TWI544664B (en) Light-emitting package structure and method of fabricating the same
TW201123545A (en) Light-emitting diode package structure and method making of the same
KR20120069999A (en) Light emitting diode package
TW201733033A (en) Integrated circuit chip packaging device and lead frame