TWI659121B - 半導體製造方法 - Google Patents
半導體製造方法 Download PDFInfo
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- TWI659121B TWI659121B TW104126087A TW104126087A TWI659121B TW I659121 B TWI659121 B TW I659121B TW 104126087 A TW104126087 A TW 104126087A TW 104126087 A TW104126087 A TW 104126087A TW I659121 B TWI659121 B TW I659121B
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- Prior art keywords
- layer
- oxidation
- coating
- semiconductor
- contact angle
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims description 39
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- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 claims abstract description 33
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- 238000000354 decomposition reaction Methods 0.000 claims description 27
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims description 5
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- 239000007787 solid Substances 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910005542 GaSb Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- LUOAKMRNTDPSOF-UHFFFAOYSA-N [SiH4].[C]=O Chemical compound [SiH4].[C]=O LUOAKMRNTDPSOF-UHFFFAOYSA-N 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
- C23C8/16—Oxidising using oxygen-containing compounds, e.g. water, carbon dioxide
- C23C8/18—Oxidising of ferrous surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma & Fusion (AREA)
- Formation Of Insulating Films (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/464,748 | 2014-08-21 | ||
| US14/464,748 US9340880B2 (en) | 2009-10-27 | 2014-08-21 | Semiconductor fabrication process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201612350A TW201612350A (en) | 2016-04-01 |
| TWI659121B true TWI659121B (zh) | 2019-05-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104126087A TWI659121B (zh) | 2014-08-21 | 2015-08-11 | 半導體製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2988327A1 (enExample) |
| JP (1) | JP2016046533A (enExample) |
| KR (1) | KR20160028358A (enExample) |
| CN (1) | CN105390371A (enExample) |
| SG (1) | SG10201506024WA (enExample) |
| TW (1) | TWI659121B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3954804A1 (de) | 2020-08-14 | 2022-02-16 | Siltronic AG | Vorrichtung und verfahren zum abscheiden einer schicht aus halbleitermaterial auf einer substratscheibe |
| WO2024162361A1 (ja) * | 2023-02-03 | 2024-08-08 | ジーエルサイエンス株式会社 | 保護膜とその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050130416A1 (en) * | 2001-12-03 | 2005-06-16 | Akira Fujisawa | Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4560589A (en) * | 1982-09-22 | 1985-12-24 | Shin-Etsu Chemical Co., Ltd. | Method for providing a coating layer of silicon carbide on substrate surface |
| JP4166346B2 (ja) * | 1997-10-27 | 2008-10-15 | 日本碍子株式会社 | 耐蝕性部材、耐蝕性部材の製造方法および腐食性物質の加熱装置 |
| US6444326B1 (en) | 1999-03-05 | 2002-09-03 | Restek Corporation | Surface modification of solid supports through the thermal decomposition and functionalization of silanes |
| US9612215B2 (en) * | 2004-07-22 | 2017-04-04 | Toyo Tanso Co., Ltd. | Susceptor |
| WO2009032488A1 (en) * | 2007-08-28 | 2009-03-12 | International Business Machines Corporation | Improved low k porous sicoh dielectric and integration with post film formation treatment |
| CN101318821A (zh) * | 2007-11-30 | 2008-12-10 | 中国人民解放军国防科学技术大学 | 一种含铪的SiC陶瓷先驱体的制备方法 |
| JP5735522B2 (ja) * | 2009-10-27 | 2015-06-17 | シルコテック コーポレイション | 化学気相成長コーティング、物品、及び方法 |
| KR101512579B1 (ko) * | 2010-10-05 | 2015-04-15 | 실코텍 코포레이션 | 내마모성 코팅, 물건 및 방법 |
| CN102120822B (zh) * | 2011-04-02 | 2012-05-02 | 中国人民解放军国防科学技术大学 | 一种常压合成聚碳硅烷的方法 |
-
2015
- 2015-07-31 SG SG10201506024WA patent/SG10201506024WA/en unknown
- 2015-08-04 EP EP15179688.5A patent/EP2988327A1/en not_active Withdrawn
- 2015-08-11 TW TW104126087A patent/TWI659121B/zh active
- 2015-08-19 KR KR1020150116889A patent/KR20160028358A/ko not_active Withdrawn
- 2015-08-20 JP JP2015162941A patent/JP2016046533A/ja active Pending
- 2015-08-21 CN CN201510520640.XA patent/CN105390371A/zh active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050130416A1 (en) * | 2001-12-03 | 2005-06-16 | Akira Fujisawa | Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2988327A1 (en) | 2016-02-24 |
| KR20160028358A (ko) | 2016-03-11 |
| TW201612350A (en) | 2016-04-01 |
| CN105390371A (zh) | 2016-03-09 |
| SG10201506024WA (en) | 2016-03-30 |
| JP2016046533A (ja) | 2016-04-04 |
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