SG10201506024WA - Semiconductor fabrication process - Google Patents

Semiconductor fabrication process

Info

Publication number
SG10201506024WA
SG10201506024WA SG10201506024WA SG10201506024WA SG10201506024WA SG 10201506024W A SG10201506024W A SG 10201506024WA SG 10201506024W A SG10201506024W A SG 10201506024WA SG 10201506024W A SG10201506024W A SG 10201506024WA SG 10201506024W A SG10201506024W A SG 10201506024WA
Authority
SG
Singapore
Prior art keywords
fabrication process
semiconductor fabrication
semiconductor
fabrication
Prior art date
Application number
SG10201506024WA
Other languages
English (en)
Inventor
B Mattzela James
Original Assignee
Silcotek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/464,748 external-priority patent/US9340880B2/en
Application filed by Silcotek Corp filed Critical Silcotek Corp
Publication of SG10201506024WA publication Critical patent/SG10201506024WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C23C8/16—Oxidising using oxygen-containing compounds, e.g. water, carbon dioxide
    • C23C8/18—Oxidising of ferrous surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
SG10201506024WA 2014-08-21 2015-07-31 Semiconductor fabrication process SG10201506024WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/464,748 US9340880B2 (en) 2009-10-27 2014-08-21 Semiconductor fabrication process

Publications (1)

Publication Number Publication Date
SG10201506024WA true SG10201506024WA (en) 2016-03-30

Family

ID=53776472

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201506024WA SG10201506024WA (en) 2014-08-21 2015-07-31 Semiconductor fabrication process

Country Status (6)

Country Link
EP (1) EP2988327A1 (enExample)
JP (1) JP2016046533A (enExample)
KR (1) KR20160028358A (enExample)
CN (1) CN105390371A (enExample)
SG (1) SG10201506024WA (enExample)
TW (1) TWI659121B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3954804A1 (de) 2020-08-14 2022-02-16 Siltronic AG Vorrichtung und verfahren zum abscheiden einer schicht aus halbleitermaterial auf einer substratscheibe
WO2024162361A1 (ja) * 2023-02-03 2024-08-08 ジーエルサイエンス株式会社 保護膜とその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4560589A (en) * 1982-09-22 1985-12-24 Shin-Etsu Chemical Co., Ltd. Method for providing a coating layer of silicon carbide on substrate surface
JP4166346B2 (ja) * 1997-10-27 2008-10-15 日本碍子株式会社 耐蝕性部材、耐蝕性部材の製造方法および腐食性物質の加熱装置
US6444326B1 (en) 1999-03-05 2002-09-03 Restek Corporation Surface modification of solid supports through the thermal decomposition and functionalization of silanes
AU2002349757A1 (en) * 2001-12-03 2003-06-23 Nippon Sheet Glass Company, Limited Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate
EP1790757B1 (en) * 2004-07-22 2013-08-14 Toyo Tanso Co., Ltd. Susceptor
WO2009032488A1 (en) * 2007-08-28 2009-03-12 International Business Machines Corporation Improved low k porous sicoh dielectric and integration with post film formation treatment
CN101318821A (zh) * 2007-11-30 2008-12-10 中国人民解放军国防科学技术大学 一种含铪的SiC陶瓷先驱体的制备方法
US9777368B2 (en) * 2009-10-27 2017-10-03 Silcotek Corp. Chemical vapor deposition coating, article, and method
KR101854162B1 (ko) * 2010-10-05 2018-06-20 실코텍 코포레이션 내마모성 코팅, 물건 및 방법
CN102120822B (zh) * 2011-04-02 2012-05-02 中国人民解放军国防科学技术大学 一种常压合成聚碳硅烷的方法

Also Published As

Publication number Publication date
KR20160028358A (ko) 2016-03-11
EP2988327A1 (en) 2016-02-24
TW201612350A (en) 2016-04-01
JP2016046533A (ja) 2016-04-04
CN105390371A (zh) 2016-03-09
TWI659121B (zh) 2019-05-11

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