TWI654334B - 阻隔板與噴淋頭組件及對應的製造方法 - Google Patents
阻隔板與噴淋頭組件及對應的製造方法Info
- Publication number
- TWI654334B TWI654334B TW106111973A TW106111973A TWI654334B TW I654334 B TWI654334 B TW I654334B TW 106111973 A TW106111973 A TW 106111973A TW 106111973 A TW106111973 A TW 106111973A TW I654334 B TWI654334 B TW I654334B
- Authority
- TW
- Taiwan
- Prior art keywords
- ring
- barrier
- plate
- shower head
- top plate
- Prior art date
Links
Classifications
-
- H10P72/74—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H10P14/6336—
-
- H10P50/242—
-
- H10P72/04—
-
- H10P72/72—
-
- H10P72/7606—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
- B23K20/122—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding using a non-consumable tool, e.g. friction stir welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
- B23K20/122—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding using a non-consumable tool, e.g. friction stir welding
- B23K20/127—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding using a non-consumable tool, e.g. friction stir welding friction stir welding involving a mechanical connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/327—Arrangements for generating the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/097,600 | 2016-04-13 | ||
| US15/097,600 US10483092B2 (en) | 2016-04-13 | 2016-04-13 | Baffle plate and showerhead assemblies and corresponding manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201802292A TW201802292A (zh) | 2018-01-16 |
| TWI654334B true TWI654334B (zh) | 2019-03-21 |
Family
ID=60039549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106111973A TWI654334B (zh) | 2016-04-13 | 2017-04-11 | 阻隔板與噴淋頭組件及對應的製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10483092B2 (enExample) |
| JP (1) | JP6909034B2 (enExample) |
| KR (1) | KR102055040B1 (enExample) |
| CN (2) | CN107385415B (enExample) |
| TW (1) | TWI654334B (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10741365B2 (en) * | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
| US10266947B2 (en) * | 2016-08-23 | 2019-04-23 | Lam Research Corporation | Rotary friction welded blank for PECVD heated showerhead |
| KR20200045785A (ko) * | 2018-10-23 | 2020-05-06 | 안범모 | 반도체 제조 공정용 또는 디스플레이 제조 공정용 프로세스 유체가 통과하는 접합부품 |
| GB201819455D0 (en) * | 2018-11-29 | 2019-01-16 | Johnson Matthey Plc | Apparatus and method for coating substrates with washcoats |
| GB201819454D0 (en) | 2018-11-29 | 2019-01-16 | Johnson Matthey Plc | Apparatus and method for coating substrates with washcoats |
| JP7224175B2 (ja) * | 2018-12-26 | 2023-02-17 | 東京エレクトロン株式会社 | 成膜装置及び方法 |
| TWI901065B (zh) | 2019-03-15 | 2025-10-11 | 美商蘭姆研究公司 | 半導體製造應用中的摩擦攪拌銲接 |
| WO2020257095A1 (en) * | 2019-06-18 | 2020-12-24 | Lam Research Corporation | Reduced diameter carrier ring hardware for substrate processing systems |
| WO2021042116A1 (en) | 2019-08-23 | 2021-03-04 | Lam Research Corporation | Thermally controlled chandelier showerhead |
| CN119980191A (zh) | 2019-08-28 | 2025-05-13 | 朗姆研究公司 | 金属沉积 |
| WO2021081123A1 (en) * | 2019-10-24 | 2021-04-29 | Lam Research Corporation | Semiconductor equipment module fabrication with additive manufacturing |
| CN115298350A (zh) * | 2020-03-19 | 2022-11-04 | 朗姆研究公司 | 喷头清扫环 |
| WO2021247627A1 (en) * | 2020-06-03 | 2021-12-09 | Lam Research Corporation | Monobloc pedestal for efficient heat transfer |
| JP7680476B2 (ja) * | 2020-06-23 | 2025-05-20 | ラム リサーチ コーポレーション | 自動シャワーヘッド傾斜調整 |
| US12415229B2 (en) | 2020-07-29 | 2025-09-16 | Blue Origin Manufacturing, LLC | Friction stir welding systems and methods |
| JP2023544486A (ja) * | 2020-10-09 | 2023-10-24 | ラム リサーチ コーポレーション | フェイスレスシャワーヘッド |
| USD1066275S1 (en) * | 2022-04-04 | 2025-03-11 | Applied Materials, Inc. | Baffle for anti-rotation process kit for substrate processing chamber |
| TW202402387A (zh) * | 2022-04-06 | 2024-01-16 | 荷蘭商Asm Ip私人控股有限公司 | 氣體遞送總成及包括氣體遞送總成之反應器系統 |
| USD1107669S1 (en) * | 2022-05-02 | 2025-12-30 | Lam Research Corporation | Processing chamber purge plate |
| CN115464459A (zh) * | 2022-09-22 | 2022-12-13 | 重庆镪正科技有限公司 | 一种具有粉尘收集机构的智能碳滑板毛坯加工机 |
| KR20250093504A (ko) * | 2022-10-25 | 2025-06-24 | 램 리써치 코포레이션 | 기판 프로세싱 시스템의 샤워헤드를 위한 컵형 배플판 |
| USD1076837S1 (en) * | 2023-01-19 | 2025-05-27 | Lam Research Corporation | Baffle |
| US12246392B2 (en) | 2023-03-30 | 2025-03-11 | Blue Origin Manufacturing, LLC | Deposition head for friction stir additive manufacturing devices and methods |
| US12140109B2 (en) | 2023-03-30 | 2024-11-12 | Blue Origin, Llc | Transpiration-cooled systems having permeable and non-permeable portions |
| US12172229B2 (en) * | 2023-03-30 | 2024-12-24 | Blue Origin, Llc | Friction stir additive manufacturing devices and methods for forming in-situ rivets |
| US12383975B2 (en) | 2023-08-03 | 2025-08-12 | Blue Origin Manufacturing, LLC | Friction stir additive manufacturing formed parts and structures with integrated passages |
| US12303994B2 (en) | 2023-08-03 | 2025-05-20 | Blue Origin Manufacturing, LLC | Friction stir additive manufacturing formed parts and structures with integrated passages |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3831860A (en) | 1972-12-18 | 1974-08-27 | Wrightway Mfg Co | Low flow volume shower head |
| US5397060A (en) | 1994-01-21 | 1995-03-14 | Afa Products, Inc. | Foam-spray-off trigger sprayer |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2950063A (en) * | 1953-12-21 | 1960-08-23 | Jr Glenn Q Ripley | Aerating shower head |
| US5451435A (en) * | 1990-06-18 | 1995-09-19 | At&T Corp. | Method for forming dielectric |
| US5549822A (en) * | 1995-01-13 | 1996-08-27 | Ferguson; George E. | Shower filter apparatus |
| SG45121A1 (en) * | 1995-10-28 | 1998-01-16 | Inst Of Microelectronics | Apparatus for dispensing fluid in an array pattern |
| JP2000077337A (ja) * | 1998-08-31 | 2000-03-14 | Toshiba Corp | ガス処理装置およびガス処理方法 |
| US6415736B1 (en) * | 1999-06-30 | 2002-07-09 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| US6123775A (en) * | 1999-06-30 | 2000-09-26 | Lam Research Corporation | Reaction chamber component having improved temperature uniformity |
| KR100406176B1 (ko) | 2000-06-19 | 2003-11-19 | 주식회사 하이닉스반도체 | 샤워헤드 및 이를 이용한 액체 원료 공급 장치 |
| KR100400044B1 (ko) * | 2001-07-16 | 2003-09-29 | 삼성전자주식회사 | 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드 |
| KR20060089002A (ko) * | 2005-02-03 | 2006-08-08 | 삼성전자주식회사 | 반도체 제조장치의 샤워헤드 |
| US7432513B2 (en) * | 2005-10-21 | 2008-10-07 | Asml Netherlands B.V. | Gas shower, lithographic apparatus and use of a gas shower |
| JP4522980B2 (ja) | 2005-11-15 | 2010-08-11 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US7682946B2 (en) * | 2005-11-04 | 2010-03-23 | Applied Materials, Inc. | Apparatus and process for plasma-enhanced atomic layer deposition |
| US7476291B2 (en) * | 2006-09-28 | 2009-01-13 | Lam Research Corporation | High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation |
| US8673080B2 (en) * | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
| US9441296B2 (en) * | 2011-03-04 | 2016-09-13 | Novellus Systems, Inc. | Hybrid ceramic showerhead |
| JP5678116B2 (ja) * | 2013-03-19 | 2015-02-25 | 東京エレクトロン株式会社 | 蓋部品、処理ガス拡散供給装置、及び基板処理装置 |
| US9290843B2 (en) | 2014-02-11 | 2016-03-22 | Lam Research Corporation | Ball screw showerhead module adjuster assembly for showerhead module of semiconductor substrate processing apparatus |
| US10741365B2 (en) * | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
| US10378107B2 (en) * | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
-
2016
- 2016-04-13 US US15/097,600 patent/US10483092B2/en active Active
-
2017
- 2017-04-11 TW TW106111973A patent/TWI654334B/zh active
- 2017-04-12 JP JP2017078797A patent/JP6909034B2/ja active Active
- 2017-04-12 KR KR1020170047208A patent/KR102055040B1/ko active Active
- 2017-04-13 CN CN201710239093.7A patent/CN107385415B/zh active Active
- 2017-04-13 CN CN202110947160.7A patent/CN113862642B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3831860A (en) | 1972-12-18 | 1974-08-27 | Wrightway Mfg Co | Low flow volume shower head |
| US5397060A (en) | 1994-01-21 | 1995-03-14 | Afa Products, Inc. | Foam-spray-off trigger sprayer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017199898A (ja) | 2017-11-02 |
| US10483092B2 (en) | 2019-11-19 |
| CN113862642A (zh) | 2021-12-31 |
| TW201802292A (zh) | 2018-01-16 |
| CN107385415A (zh) | 2017-11-24 |
| KR102055040B1 (ko) | 2019-12-11 |
| JP6909034B2 (ja) | 2021-07-28 |
| CN107385415B (zh) | 2021-09-07 |
| US20170301515A1 (en) | 2017-10-19 |
| CN113862642B (zh) | 2024-08-30 |
| KR20170117333A (ko) | 2017-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI654334B (zh) | 阻隔板與噴淋頭組件及對應的製造方法 | |
| JP7395644B2 (ja) | 基板処理システムにおける再循環を低減するためのカラー、円錐形シャワーヘッド、および/または、トッププレート | |
| TWI783960B (zh) | 具有改良的處理均勻性之基板支撐件 | |
| CN110383454A (zh) | 底部边缘环和中部边缘环 | |
| US10157755B2 (en) | Purge and pumping structures arranged beneath substrate plane to reduce defects | |
| US12509772B2 (en) | Split showerhead cooling plate | |
| KR20190112167A (ko) | 아킹 (arcing) 을 감소시키기 위한 헬륨 플러그 설계 | |
| US10096471B2 (en) | Partial net shape and partial near net shape silicon carbide chemical vapor deposition | |
| TWI823977B (zh) | 預防半導體基板處理中基座上的沉積 | |
| TWI899195B (zh) | 使用對照式雷射感測器的原位晶圓厚度及間隙監測 | |
| US10460978B2 (en) | Boltless substrate support assembly | |
| US20180294197A1 (en) | System design for in-line particle and contamination metrology for showerhead and electrode parts | |
| TWI897938B (zh) | 電漿排除區域環、電漿排除區域組件及基板處理系統 | |
| US12480210B2 (en) | Reduced diameter carrier ring hardware for substrate processing systems | |
| TWI912325B (zh) | 冷卻組件、基板處理組件及系統 | |
| KR102892196B1 (ko) | 기판 프로세싱 시스템을 위한 유전체 윈도우를 갖는 허니콤 (honeycomb) 주입기 | |
| KR102916789B1 (ko) | 기판 프로세싱 시스템들을 위한 감소된 직경 캐리어 링 하드웨어 | |
| TWI760111B (zh) | 底部和中間邊緣環 | |
| JP2025520150A (ja) | 真空断熱された加熱リアクタ構成 | |
| WO2025212331A1 (en) | Two-piece cooling plate for a showerhead of a substrate processing system | |
| KR20240121874A (ko) | 자체시일링 가스 도관들 및/또는 잔류물로 인한 클로깅 감소를 갖는 정전 척들 |