TWI653104B - Substrate processing device and gap cleaning method - Google Patents

Abstract

A substrate processing apparatus includes: a substrate holding unit for holding a substrate in a horizontal posture; an outer cylindrical body having an outer peripheral surface and an opposing portion opposed to a central portion of the upper surface of the substrate, and facing up and down The counter member extends around the outer periphery of the main body, has an inner peripheral surface forming a cylindrical gap with the outer peripheral surface of the main body, and faces the upper surface of the substrate. The cleaning liquid is spit. An outlet opening on the outer peripheral surface of the body to discharge the cleaning liquid toward the radial outer side of the body; a cleaning liquid supply unit for supplying the cleaning liquid to the cleaning liquid discharge outlet; a rotating unit, It relatively rotates the facing member and the body around a rotation axis passing through a central portion of the upper surface of the substrate; and a washing control unit that controls the washing liquid supply unit and the rotating unit to wash the cylindrical gap And the washing control unit executes a rotation step and a washing liquid discharge step, and the rotation step controls the rotation unit to relatively rotate the facing member and the body Step, the step of discharging the cleaning liquid, based synchronization with the rotation step of controlling the cleaning fluid supply means and the discharge port of the cleaning liquid discharged from the above step cleaning solution.

Description

Substrate processing device and gap cleaning method

The present invention relates to a substrate processing method for processing the upper surface of a substrate using a processing fluid, and a gap cleaning method for cleaning a gap between a body facing the upper surface of the substrate and an opposing member. The substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, substrates for optical magnetic disks, and optical Cover substrate, ceramic substrate, solar cell substrate, etc.

In the manufacturing steps of a semiconductor device or a liquid crystal display device, a substrate processing device for processing a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used. A single-chip type substrate processing apparatus that processes substrates one by one includes, for example, a rotary chuck that holds and rotates a substrate horizontally, and a processing liquid supply unit that supplies a processing liquid to a substrate held by the rotary chuck. A blocking member facing the substrate held by the rotary chuck from above; and a central axis nozzle housed in a central opening formed in a central portion of the blocking member. The blocking member is a member that is close to the upper surface of the substrate and used to block the upper surface from the space around it.

When the substrate is processed by this substrate processing apparatus, for example, the processing liquid from the processing liquid supply unit is supplied to the substrate in a state where the blocking member and the central axis nozzle are retracted to a retreat position above the substrate. On top. Companion As the processing liquid is supplied to the upper surface of the substrate, a processing liquid mist is generated above the substrate. The processing liquid mist may enter the cylindrical gap and adhere to the inner peripheral surface of the blocking member or the outer peripheral surface of the central axis nozzle. Therefore, the cylindrical gap needs to be cleaned.

Japanese Patent Application Laid-Open No. 2010-56218 describes a method of supplying a cleaning liquid from a cleaning liquid nozzle to a lower surface of a blocking member to clean a lower surface of the blocking plate.

It is conceivable that Japanese Patent Application Laid-Open No. 2010-56218 discloses cleaning of the tubular gap by blowing the washing liquid from the washing liquid nozzle toward the tubular gap from below. However, the gap between the cylindrical gaps is usually narrow, so it is difficult to make the washing liquid blown from below pass through the cylindrical gaps well. Therefore, the cylindrical gap cannot be cleaned well.

Therefore, it is desired to have a method for cleaning the cylindrical gap between the outer peripheral surface of the body (center axis nozzle) and the inner peripheral surface of the opposing member (blocking member).

Therefore, an object of the present invention is to provide a substrate processing apparatus and a gap cleaning method that can clean a cylindrical gap that is well defined between the outer peripheral surface of the body and the inner peripheral surface of the opposing member.

The present invention provides a substrate processing apparatus comprising: a substrate holding unit for holding a substrate in a horizontal posture; an outer cylindrical body having an outer peripheral surface and an opposing portion facing the central portion of the upper surface of the substrate And the counter member extends around the outer periphery of the body, has an inner peripheral surface forming a cylindrical gap with the outer peripheral surface of the body, and faces the upper surface of the substrate; The cleaning liquid discharge opening is opened on the outer peripheral surface of the main body, and is used to spit toward the inner peripheral surface. A cleaning liquid is supplied; a cleaning liquid supply unit is configured to supply the cleaning liquid to the cleaning liquid discharge port; and a rotating unit is configured to rotate the facing member and the body around a rotation axis passing through a central portion of the upper surface of the substrate. Relative rotation; and a washing control unit that controls the washing liquid supply unit and the rotation unit to wash the cylindrical gap; and the washing control unit performs a rotation step and a washing liquid discharge step, the rotation The step is a step of controlling the rotation unit to relatively rotate the facing member and the body. The cleaning liquid discharge step is synchronized with the rotation step, and controls the cleaning liquid supply unit to discharge from the cleaning liquid discharge port. Steps of washing liquid.

According to this configuration, while the opposing member is relatively rotated with the main body, the cleaning solution is ejected toward the inner peripheral surface of the opposing member from the cleaning liquid discharge port formed on the outer peripheral surface of the main body. Since the inner peripheral surface of the opposing member rotates relative to the outer peripheral surface of the main body, the cleaning liquid discharged from the cleaning liquid discharge port is pulled by the rotation of the internal peripheral surface, while rotating while flowing downward. That is, a downward spiral flow is formed in the cylindrical gap. Therefore, centrifugal force and gravity act on the cleaning liquid flowing in the cylindrical gap, and the physical force can remove the contaminating substances attached to the inner peripheral surface and / or the outer peripheral surface. Thereby, the cylindrical gap can be washed well.

In an embodiment of the present invention, the cleaning liquid supply unit includes a cleaning liquid pipe for the cleaning liquid to flow through and is inserted into the body, and the downstream end of the cleaning liquid pipe is connected to The outer peripheral surface of the body is opened to form the cleaning liquid discharge port.

According to this configuration, the cleaning liquid supply unit includes a cleaning liquid pipe that is inserted into the main body. That is, the cleaning liquid can be supplied to the cleaning liquid discharge port formed on the outer peripheral surface of the main body through the inside of the main body. This makes it possible to easily realize a configuration in which the cleaning liquid is discharged from the cleaning liquid discharge port formed on the outer peripheral surface of the body toward the inner peripheral surface of the facing member.

In addition, the cleaning liquid piping may also include a vertical pipe that extends linearly in the vertical direction; and a connection pipe that connects the lower end of the vertical pipe and the cleaning liquid discharge port.

According to this configuration, the cleaning liquid pipe includes a vertical pipe and a connection pipe connecting the cleaning liquid discharge port formed on the outer peripheral surface of the main body and the lower end of the vertical pipe. This makes it possible to easily realize a configuration in which the cleaning liquid pipe is inserted into the main body, and the cleaning liquid is discharged from the cleaning liquid discharge port formed on the outer peripheral surface of the main body toward the inner peripheral surface of the facing member.

The cleaning liquid discharge port may include an inclined discharge port that discharges the cleaning liquid diagonally downward. According to this configuration, since the cleaning liquid is discharged obliquely downward from the cleaning liquid discharge port, it is possible to suppress an increase in the processing liquid supplied to the cylindrical gap. Thereby, a swirling flow facing downward can be formed well.

The apparatus may further include a gas supply unit that supplies gas to the cylindrical gap from a position higher than a position where the washing fluid is discharged from the washing fluid discharge port in the cylindrical gap. In this case, the cleaning control unit may control the gas supply unit to synchronize with the rotation step and the cleaning liquid discharge step, and further perform a gas supply step of supplying gas to the cylindrical gap.

According to this configuration, since the gas is supplied from a position higher than the supply position of the cleaning liquid supplied from the cleaning liquid discharge port in the cylindrical gap, the rise of the cleaning liquid supplied to the cylindrical gap can be suppressed. Thereby, a downward swirling flow can be formed more favorably.

The device may further include a processing fluid pipe for circulating a processing fluid to be supplied on the substrate and inserted into the main body. In this case, the opening of the downstream end of the processing fluid piping may form a processing fluid discharge. mouth.

According to this structure, the system is used for the main body of a nozzle for discharging a processing fluid. Therefore, the cylindrical gap between the outer peripheral surface of the nozzle and the inner peripheral surface of the facing member can be washed well.

The substrate processing apparatus may further include a cleaning liquid blowing unit that blows a cleaning liquid toward the facing portion of the main body from below. In this case, the washing control unit may also control the washing liquid blowing unit, synchronize with the rotation step and the washing liquid discharge step, and then blow the washing liquid toward the facing portion to wash the washing liquid. Step of washing the opposite portion of the opposite portion.

According to this configuration, the cleaning of the cylindrical gap and the washing step of the facing portion (the washing of the facing portion of the body) can be performed simultaneously. Therefore, compared with the case where the cylindrical gap is cleaned and the opposite part of the body is cleaned at different timings, the body can be cleaned in a short time.

In addition, the present invention provides a gap cleaning method, which is used to clean a cylindrical gap that is partitioned between the outer peripheral surface of the body and the inner peripheral surface of the opposing member. The opposing part extends up and down, the opposing member surrounds the outer periphery of the main body and faces the upper surface of the substrate. The gap cleaning method performs the following steps: opening on the outer peripheral surface of the main body, A step of preparing a cleaning liquid discharge port for discharging the cleaning liquid toward the cylindrical gap; a rotation step of relatively rotating the facing member and the body; and a synchronization step with the rotation step to discharge from the cleaning liquid discharge port The washing liquid discharge step of the washing liquid.

According to this method, while the opposing member and the main body are relatively rotated, the cleaning solution is ejected toward the inner peripheral surface of the opposing member from the cleaning solution discharge port formed on the outer peripheral surface of the main body. Since the inner peripheral surface of the opposing member rotates relative to the outer peripheral surface of the main body, The cleaning liquid discharged from the cleaning liquid discharge port is pulled by the rotation of the inner peripheral surface, while rotating while flowing downward. That is, a downward spiral flow is formed in the cylindrical gap. Therefore, centrifugal force and gravity act on the cleaning liquid flowing in the cylindrical gap, and the physical force can remove the contaminated substances attached to the inner peripheral surface and / or the outer peripheral surface. Thereby, the cylindrical gap can be washed well.

The method may further include a gas supply step for supplying gas to the cylindrical gap from a position higher than a position where the cleaning fluid is discharged from the cleaning fluid discharge port in the cylindrical gap.

According to this method, since the gas is supplied from a position higher than the supply position of the cleaning liquid supplied from the cleaning liquid discharge port in the cylindrical gap, the rise of the cleaning liquid supplied to the cylindrical gap can be suppressed. Thereby, a downward swirling flow can be formed more favorably.

The method may further include a facing portion washing step, which is synchronized with the rotating step and the washing liquid discharge step, and blows the washing liquid toward the facing portion to wash the facing portion.

According to this method, the cleaning of the cylindrical gap and the washing of the facing portion (the washing of the facing portion of the body) can be performed simultaneously. Therefore, compared with the case where the cylindrical gap is cleaned and the opposite part of the body is cleaned at different timings, the body can be cleaned in a short time.

The above and other objects, features, and effects of the present invention will be self-evident by referring to the description of the attached drawings and the embodiments described below.

1‧‧‧ substrate processing device

2‧‧‧ processing unit

3‧‧‧control device

4‧‧‧ cabin

5‧‧‧ Rotating Chuck

6‧‧‧medicine supply unit

7‧‧‧ Opposing member

8‧‧‧ Nozzle

8a‧‧‧ lower end

9‧‧‧ clamping member

10‧‧‧washing liquid supply unit

11‧‧‧ below unit

12‧‧‧ cup body

12a‧‧‧upper end

13‧‧‧ partition

14‧‧‧FFU (Fan Filter Unit)

15‧‧‧ exhaust pipe

16‧‧‧Rotary motor

17‧‧‧rotation axis

18‧‧‧ Turntable

19‧‧‧ liquid medicine nozzle

20‧‧‧medicine piping

21‧‧‧Medicine valve

22‧‧‧ Nozzle moving unit

23‧‧‧ Interrupter

23a‧‧‧ Opposite side of substrate

24‧‧‧Rotary shaft

24a‧‧‧Inner peripheral surface

25‧‧‧through hole

25a‧‧‧Inner peripheral surface

25b‧‧‧ tapered surface

26‧‧‧ support arm

27‧‧‧ Interruption plate rotation unit

28‧‧‧ Opposing member lifting unit

29‧‧‧ cylindrical gap

29a‧‧‧connection position

29b‧‧‧connection position

30‧‧‧Ambient gas outlet

31‧‧‧ Ontology

31a‧‧‧outer surface

31b‧‧‧ opposite

32‧‧‧washing liquid spit out

33‧‧‧Processing liquid piping

34‧‧‧ Central Gas Piping

35‧‧‧ treatment liquid discharge outlet

36‧‧‧Central gas outlet

37‧‧‧Flushing valve

38‧‧‧Flushing liquid supply piping

39‧‧‧ Central Gas Valve

40‧‧‧Central gas supply piping

41‧‧‧Ambient gas piping

42‧‧‧Ambient gas valve

43‧‧‧The first flow regulating valve

44‧‧‧washing liquid pipe

45‧‧‧Piping up and down

45a‧‧‧ bottom

46‧‧‧ connecting piping

46a‧‧‧ downstream

47‧‧‧Cleaning liquid upper valve

48‧‧‧ Cleaning liquid supply piping

48a‧‧‧ divergence

50‧‧‧ suction pipe

51‧‧‧ Suction valve

52‧‧‧ Nozzle below

53‧‧‧ Washing liquid piping

54‧‧‧wash liquid lower valve

55‧‧‧Second flow regulating valve

56‧‧‧Drive parts storage space

57‧‧‧ with access

58‧‧‧gas seal

70‧‧‧ liquid film

80‧‧‧ liquid film

202‧‧‧processing unit

205‧‧‧Rotary Chuck

207‧‧‧ Opposing member

218‧‧‧Turntable

223‧‧‧ Interrupter

223a‧‧‧ Opposite side of substrate

223b‧‧‧ 锷

223c‧‧‧rotating chuck abutment

225‧‧‧through hole

225a‧‧‧Inner peripheral surface

226‧‧‧Support arm

229‧‧‧ flange support

230‧‧‧Cylinder

231‧‧‧ Opposite member support

232‧‧‧ Engagement Department

233‧‧‧Support

234‧‧‧ flange

235‧‧‧The first uneven portion

236‧‧‧ support body

237‧‧‧Connection Department

238‧‧‧Second uneven portion

240‧‧‧ Maze

241‧‧‧arm support shaft

242‧‧‧arm swing unit

243‧‧‧ protrusion

244‧‧‧hole

245‧‧‧arm lifting unit

250‧‧‧Gas supply channel

251‧‧‧The first runner

252‧‧‧The first branch

253‧‧‧Second runner

254‧‧‧ 2nd branch

255‧‧‧Gas injection port

A0, A1‧‧‧‧Axis of rotation

A2‧‧‧Swing axis

A3‧‧‧center axis

C‧‧‧ Wafer Carrying Box

CR‧‧‧ substrate transfer robot

H‧‧‧ Robot

IR‧‧‧ transfer robot

LP‧‧‧load port

R‧‧‧ swirl

W‧‧‧ substrate

W1 ~ W3‧‧‧Interval

FIG. 1 is an internal layout of a substrate processing apparatus for explaining an embodiment of the present invention. Schematic top view of the bureau.

FIG. 2 is a schematic sectional view for explaining a configuration example of a processing unit provided in the substrate processing apparatus.

Fig. 3 is a longitudinal sectional view of an opposing member provided in the processing unit.

FIG. 4 is a bottom view of the facing member.

Fig. 5 is a cross-sectional view for explaining the liquid flow of the cleaning liquid discharged from the cleaning liquid discharge port.

Fig. 6 is a longitudinal sectional view for explaining the liquid flow of the cleaning liquid discharged from the cleaning liquid discharge port.

FIG. 7 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus.

FIG. 8 is a flowchart for explaining a substrate processing example of the substrate processing apparatus.

FIG. 9 is a schematic sectional view for explaining a step of the medicinal solution shown in FIG. 8.

FIG. 10 is a schematic sectional view for explaining the rinsing step shown in FIG. 8.

FIG. 11 is a schematic sectional view for explaining the spin-drying step shown in FIG. 8.

FIG. 12 is a flowchart for explaining a nozzle cleaning step shown in FIG. 8.

FIG. 13 is a schematic sectional view for explaining the above-mentioned nozzle cleaning step.

FIG. 14 is a schematic cross-sectional view illustrating a configuration example of a processing unit according to another embodiment of the present invention.

FIG. 15 is an enlarged cross-sectional view of an opposing member included in the processing unit.

FIG. 1 is a schematic plan view for explaining the internal layout of a substrate processing apparatus 1 for performing a substrate processing method according to a first embodiment of the present invention. The substrate processing apparatus 1 is a single-chip processing type in which each substrate W such as a silicon wafer is processed one by one. Of the device. In this embodiment, the substrate W is a disc-shaped substrate. The substrate processing apparatus 1 includes: a plurality of processing units 2 that process a substrate W with a processing liquid; a loading port LP for mounting a wafer carrying box C that houses a plurality of substrates W processed by the processing unit 2; a transfer robot IR And CR, which transfers the substrate W between the loading port LP and the processing unit 2; and a control device (cleaning control unit) 3, which controls the substrate processing device 1. The transfer robot IR transfers the substrate W between the wafer carrier C and the substrate transfer robot CR. The substrate transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plural processing units 2 have the same configuration, for example.

FIG. 2 is a schematic sectional view for explaining a configuration example of the processing unit 2.

The processing unit 2 includes: a box-shaped cabin 4; a rotary chuck (substrate holding unit) 5 which holds a piece of the substrate W in a horizontal posture within the cabin 4 and makes the substrate W pass through a vertical portion of the center of the substrate W The rotation axis A1 rotates; the medicinal solution supply unit 6 is configured to supply the medicinal solution toward the substrate W held by the rotary chuck 5; the opposing member 7 faces the substrate W held by the rotary chuck 5 Nozzle 8 having a processing fluid discharge port (treatment liquid discharge port 35 and central gas discharge port 36) facing the central portion of the upper surface of the substrate W held by the rotary chuck 5, and inserted vertically into the opposing member The central part of 7; a washing liquid supply unit 10 for supplying washing liquid from the inside of the nozzle 8 toward the washing liquid discharge outlet (inclined discharge outlet) 32 formed in the nozzle 8; the lower unit (wash liquid blowing Unit) 11 for blowing and cleaning the processing fluid discharge port (the processing liquid discharge port 35 and the central gas discharge port 36) from the lower side toward the nozzle 8 without the substrate W being held in the rotating chuck 5. Liquid; and a cylindrical cup body 12 that surrounds the rotating chuck 5.

The cabin 4 includes a box-shaped partition wall 13 that accommodates the rotating chuck 5 and a nozzle, and an FFU (fan filter unit) 14 that serves as an air supply unit from the partition wall 13 The upper part conveys clean air (air filtered by a filter) into the partition wall 13; and an exhaust pipe 15 that exhausts the gas in the cabin 4 from the lower part of the partition wall 13. The FFU 14 is arranged above the partition wall 13 and is mounted on the top wall of the partition wall 13. The FFU 14 delivers clean air downward from the top wall of the partition wall 13 into the cabin 4. The exhaust pipe 15 is connected to the bottom of the cup body 12, and the gas in the cabin 4 is led out to the exhaust processing equipment provided in the factory where the substrate processing apparatus 1 is installed. Therefore, a downflow (downflow) flowing downward in the cabin 4 is formed by the FFU 14 and the exhaust pipe 15. The processing of the substrate W is performed in a state where a downflow is formed in the cabin 4.

As the rotary chuck 5, a chuck of a clamping type that holds the substrate W in a horizontal direction and holds the substrate W horizontally is used. Specifically, the rotary chuck 5 includes: a rotary motor 16; a rotary shaft 17 which is integrated with a drive shaft of the rotary motor 16; and a disk-shaped rotary table 18 which is mounted on the rotary shaft 17 substantially horizontally. On the top.

A plurality of (3 or more. For example, six) clamping members 9 are arranged on the upper surface of the turntable 18 and its peripheral edge portion. The plurality of clamping members 9 are attached to the upper peripheral portion of the turntable 18, and are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W.

The rotary chuck 5 is not limited to a clamp type. For example, it is also possible to hold the substrate W in a horizontal posture by sucking the back surface of the substrate W in a vacuum, and in this state, rotate about the vertical axis of rotation so that A vacuum suction type (vacuum chuck) in which the substrate W held by the spin chuck 5 rotates.

The medicinal solution supply unit 6 includes a medicinal solution nozzle 19, a medicinal solution pipe 20 connected to the medicinal solution nozzle 19, a medicinal solution valve 21 interposed on the medicinal solution pipe 20, and a nozzle moving unit 22 that makes the medicinal solution nozzle 19 moves. The chemical liquid nozzle 19 is, for example, a straight tube nozzle that discharges liquid in a continuous flow state. The medicinal solution from the medicinal solution supply source is supplied to the medicine 液 管管 20。 Liquid pipe 20. In this embodiment, a sulfuric acid / hydrogen peroxide mixture (SPM) at a high temperature (for example, about 170 ° C. to about 180 ° C.) is supplied to the chemical liquid pipe 20 as the chemical liquid. The SPM heated to the high temperature by the reaction heat of sulfuric acid and hydrogen peroxide is supplied to the chemical solution pipe 20.

When the liquid medicine valve 21 is opened, the high-temperature SPM supplied from the liquid medicine pipe 20 to the liquid medicine nozzle 19 is discharged downward from the liquid medicine nozzle 19. In addition, when the chemical liquid valve 21 is closed, the discharge of the high-temperature SPM from the chemical liquid nozzle 19 is stopped. The nozzle moving unit 22 is a processing position where the chemical liquid nozzle 19 is supplied to the substrate W at a high temperature SPM discharged from the chemical liquid nozzle 19, and the chemical liquid nozzle 19 is retracted to one side of the rotary chuck 5 in a plan view Move between their retreat positions.

FIG. 3 is a longitudinal sectional view of the facing member 7. FIG. 4 is a bottom view of the facing member 7. The facing member 7 will be described with reference to FIGS. 2 to 4.

The opposing member 7 includes a blocking plate 23 and a rotation shaft 24 rotatably provided on the blocking plate 23. The blocking plate 23 has a disk shape having a diameter substantially the same as or larger than that of the substrate W. The blocking plate 23 has a substrate facing surface 23a having a circular shape on the lower surface thereof facing the entire area of the upper surface of the substrate W. A cylindrical through hole 25 is formed in the central portion of the substrate facing surface 23a and penetrates the blocking plate 23 up and down. The through holes 25 are defined by a cylindrical inner peripheral surface 25a. A tapered surface 25b is formed at the lower end portion of the inner peripheral surface 25a and expands outward as it goes downward.

The rotation shaft 24 is provided so as to be rotatable about a rotation axis A0 (an axis that coincides with the rotation axis A1 of the substrate W) that extends vertically through the center of the interrupter plate 23. The rotation shaft 24 is cylindrical. The inner peripheral surface 24a of the rotation shaft 24 is formed as a cylindrical surface centered on the rotation axis A0. The internal space of the rotating shaft 24 communicates with the through hole 25 of the blocking plate 23. The inner peripheral surface 24a and the inner peripheral surface 25a of the rotation shaft 24 are in a shape Made on the same circumferential surface. The rotation shaft 24 is rotatably supported by a support arm 26 that extends horizontally above the blocking plate 23.

A blocking plate rotating unit (rotating unit) 27 including an electric motor or the like is coupled to the blocking plate 23. The shutter rotation unit 27 rotates the shutter 23 and the rotation shaft 24 about the rotation axis A0 with respect to the support arm 26. The various drive components constituting the shutter rotation unit 27 are accommodated in a drive component accommodation space 56 provided inside the rotation shaft 17 and / or inside the support arm 26.

An opposing member elevating unit 28 including an electric motor, a ball screw, and the like is coupled to the support arm 26. The opposing member elevating unit 28 raises and lowers the opposing member 7 (blocking plate 23 and rotation shaft 24) and the nozzle 8 together with the support arm 26 in the vertical direction.

The opposing member elevating unit 28 brings the opposing member 7 and the nozzle 8 closer to the approaching position of the substrate opposing surface 23 a of the blocking plate 23 to the upper position of the substrate W held by the rotary chuck 5 (see FIG. 11). , Lift up and down between the retracted position (refer to Figure 9) set above the approach position. The opposing member elevating unit 28 may be, for example, at four positions (approach position, lower intermediate position (ie, nozzle washing position. See FIG. 13), upper intermediate position (ie, washing position. See FIG. 10), And retreat position), hold the shutter 23. The lower intermediate position is a predetermined position between the approach position and the retreat position. The upper intermediate position is a predetermined position between the lower intermediate position and the retreat position.

The nozzle 8 extends in a vertical direction along a rotation axis A1 which is a vertical axis passing through the center of the blocking plate 23 and the substrate W. In this embodiment, the nozzle 8 functions as a central axis nozzle. The nozzle 8 is arranged above the rotary chuck 5. The nozzle 8 is supported by a support arm 26. The nozzle 8 cannot be rotated relative to the support arm 26. The nozzle 8 is raised and lowered together with the blocking plate 23, the rotation shaft 24, and the support arm 26. The nozzle 8 is inserted into the internal space of the rotating shaft 24. The lower surface of the nozzle 8 is arranged at substantially the same height as the substrate facing surface 23a of the blocking plate 23 or above the substrate facing surface 23a. The nozzle 8 is surrounded by a cylindrical cylindrical gap 29 formed around the nozzle 8. The gap size of the cylindrical gap 29 is, for example, about 3 mm, and it functions as a flow path through which an inert gas flows. The lower end of the cylindrical gap 29 is opened in a ring shape around the nozzle 8 to form a surrounding gas outlet 30.

The nozzle 8 includes a cylindrical body 31 extending in the vertical direction. The main body 31 has a cylindrical outer peripheral surface 31 a and an opposing surface (opposing portion) 31 b which is provided at the lower end portion of the main body 31 and faces the central portion of the upper surface of the substrate W. A cleaning liquid discharge port 32 is formed on the outer peripheral surface 31a of the main body 31 at a predetermined position in the circumferential direction in the middle of the upper and lower directions of the main body 31 (a distance W1 (for example, about 50 mm) from the lower end of the main body 31). The washing liquid discharge port 32 discharges the washing liquid from the inside to the outside in a plan view. As shown in FIG. 3, the formation position of the cleaning liquid discharge port 32 is located lower than the connection position 29 a of the connecting passage 57 of the cylindrical gap 29.

A processing liquid pipe (processing fluid pipe) 33 and a gas pipe (processing fluid pipe) 34 are inserted into the body 31. The treatment liquid pipe 33 and the central gas pipe 34 extend in the vertical direction. An opening provided at the downstream end of the processing liquid pipe 33 forms a processing liquid discharge outlet (processing fluid discharge outlet) 35. An opening provided at the downstream end of the central gas pipe 34 forms a central gas discharge port (processing fluid discharge port) 36. The treatment liquid discharge port 35 and the central gas discharge port 36 are arranged at the same height as the lower end surface of the main body 31. That is, the lower ends of the processing liquid piping 33 and the central gas piping 34 are opened at the facing surface 31 b of the main body 31, and a processing liquid discharge port 35 and a central gas discharge port 36 are formed respectively.

The processing liquid pipe 33 is connected to the flushing via the flushing liquid valve 37 液 生产 管 38。 Liquid supply pipe 38. When the flushing liquid valve 37 is opened, the flushing liquid (processing fluid) is discharged downward from the processing liquid discharge port 35. The rinse liquid supplied to the treatment liquid pipe 33 is, for example, deionized water (DIW), but is not limited to DIW. It may also be carbonated water, electrolytic ion water, hydrogen water, ozone water, and a dilution concentration (for example, about 10 ppm to 100 ppm). Either of hydrochloric acid water.

The central gas pipe 34 is connected to a central gas supply pipe 40 provided with a central gas valve 39. When the central gas valve 39 is opened, the gas (processing fluid) is discharged downward from the central gas discharge port 36. Examples of the gas supplied to the central gas pipe 34 and the gas supplied to the cylindrical gap 29 are inert gases. The inert gas is, for example, any of nitrogen and clean air.

The cylindrical gap 29 is defined as a gap between the outer peripheral surface 31 a of the main body 31 and the inner peripheral surfaces 25 a and 24 a of the opposing member 7 (the blocking plate 23 and the rotation shaft 24). The cylindrical gap 29 surrounds the outer peripheral surface 31 a of the main body 31. The cylindrical gap 29 is located at a predetermined position above the cleaning liquid discharge port 32 and is connected to the surrounding gas pipe 41. A peripheral gas valve 41 for opening and closing the peripheral gas pipe 41 and a first flow adjusting valve 43 for adjusting the opening degree of the peripheral gas pipe 41 and adjusting the gas flow rate supplied to the cylindrical gap 29 are provided in the peripheral gas pipe 41. Although not shown, the first flow regulating valve 43 includes a valve body having a valve seat inside, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between the open position and the closed position. The same applies to other flow regulating valves. In this embodiment, a gas supply unit is constituted by the surrounding gas piping 41, the surrounding gas valve 42, and the first flow adjustment valve 43.

When the surrounding gas valve 42 is opened, the gas flows through the cylindrical gap 29 at a flow rate corresponding to the opening degree of the first flow adjustment valve 43, and the gas is discharged downward from the surrounding gas discharge port 30. Gas to be supplied to the surrounding gas pipe 41 and to be supplied in a cylindrical shape An example of the gas in the gap 29 is an inert gas. The inert gas is, for example, any of nitrogen and clean air.

The cylindrical gap 29 is in communication with the drive-part storage space 56 via the communication passage 57. An air seal 58 such as a labyrinth is interposed in the connecting passage 57 so that the ambient gas of the drive part housing space 56 does not flow out into the cabin 4 through the connecting passage 57 (the ambient gas of the drive part housing space 56 and the The ambient gas in the cabin 4 is blocked).

The cleaning liquid supply unit 10 includes: a cleaning liquid pipe 44 which is inserted into the body 31; a cleaning liquid supply pipe 48 which is connected to the cleaning liquid pipe 44; and a cleaning liquid upper valve 47 which is used to open and close The cleaning liquid supply pipe 48 and a second flow rate adjusting valve 55 adjust the opening degree of the cleaning liquid supply pipe 48 to adjust the flow rate of the cleaning liquid supplied to the cleaning liquid pipe 44. The cleaning liquid pipe 44 includes a vertical pipe 45 extending vertically in the vertical direction, and a connecting pipe 46 connecting the lower end 45 a of the vertical pipe 45 and the cleaning liquid discharge port 32. The cleaning liquid pipe 44 does not open at the lower end surface of the main body 31. The connection pipe 46 is a straight pipe and is inclined at a predetermined angle (for example, about 30 °) with respect to the vertical direction. Therefore, the cleaning liquid discharge port 32 discharges the cleaning liquid at an obliquely downward direction inclined by about 30 ° with respect to the vertical direction. The downstream end of the connection pipe 46 (the downstream end of the washing liquid pipe) 46 a does not protrude radially outward from the outer peripheral surface 31 a of the main body 31. That is, the cleaning liquid discharge port 32 is provided on the same surface as the outer peripheral surface 31a. The vertical pipe 45 and the connection pipe 46 may be different members or may be integrally formed.

When the washing liquid upper valve 47 is opened, the washing liquid is discharged obliquely downward from the washing liquid discharge port 32. The cleaning liquid supplied to the cleaning liquid pipe 44 is, for example, water. The water is, for example, deionized water (DIW), but is not limited to DIW, and may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water at a diluted concentration (for example, about 10 ppm to 100 ppm). The same applies to the cleaning liquid supplied to the lower nozzle 52.

At the branched position 48a between the cleaning liquid supply pipe 48 and the base end of the cleaning liquid pipe 44 and the cleaning liquid upper valve 47, a branch connection suction pipe 50 is used to suck the cleaning liquid inside the cleaning liquid pipe 44 One end. A suction valve 51 for opening and closing the suction pipe 50 is provided in the suction pipe 50. The other end of the suction pipe 50 is connected to a suction device (not shown). The suction device is often set to be in an activated state, for example. When the suction valve 51 is opened, the inside of the lower part of the diverging position 48a of the cleaning liquid supply pipe 48 is exhausted, and the inside of the downstream part is sucked for cleaning. liquid.

FIG. 5 is a cross-sectional view for explaining the liquid flow of the cleaning liquid discharged from the cleaning liquid discharge port 32. FIG. FIG. 6 is a longitudinal sectional view for explaining the liquid flow of the cleaning liquid discharged from the cleaning liquid discharge port 32. FIG. As shown in FIG. 5, the cleaning liquid discharge port 32 extends from the inside to the outside along the radial direction of the body 31 of the nozzle 8.

When the nozzle 8 is cleaned, the shutter rotation unit 27 (see FIG. 2) rotates the shutter 23 and the rotation shaft 24 and opens the cleaning liquid upper valve 47 (see FIG. 2). Thereby, as shown in FIG. 5 and FIG. 6, while the opposing member 7 is rotated relative to the body 31 of the nozzle 8, the cleaning liquid discharge outlet 32 formed on the outer peripheral surface 31 a of the body 31 is directed toward the rotation shaft 24. The cleaning liquid is discharged from the inner peripheral surface 24a. Since the inner peripheral surface 24a rotates with respect to the outer peripheral surface 31a, the washing liquid discharged from the washing liquid discharge port 32 is pulled by the rotation of the inner peripheral surface 24a, and turns while flowing downward. That is, a downward swirling flow R is formed in the cylindrical gap 29.

The cleaning liquid discharge port 32 discharges the cleaning liquid diagonally downward. Since the cleaning liquid is discharged obliquely downward from the cleaning liquid discharge port 32, it is possible to suppress an increase in the cleaning liquid supplied to the cylindrical gap 29. As a result, a downward swirling flow R can be favorably formed in the cylindrical gap 29.

The lower unit 11 includes: a lower nozzle 52, which spit out and cleans A cleaning liquid piping 53 which guides the cleaning liquid toward the lower nozzle 52; and a cleaning liquid lower valve 54 which is interposed in the cleaning liquid piping 53. When the cleaning liquid lower valve 54 is opened, the cleaning liquid is supplied from the cleaning liquid lower pipe 53 to the lower nozzle 52. As a result, the cleaning liquid is discharged upward from the lower nozzle 52. The cleaning liquid supplied to the lower nozzle 52 is, for example, water.

As shown in FIG. 2, the cup body 12 is disposed outside the substrate W held in the rotation chuck 5 (a direction separated from the rotation axis A1). The cup body 12 surrounds the rotating table 18. When the processing liquid (medicine solution or rinsing liquid) is supplied to the substrate W while the substrate W is rotated by the rotary chuck 5, the processing liquid supplied to the substrate W is shaken off around the substrate W. When the processing liquid is supplied to the substrate W, the upper end portion 12 a of the cup body 12 opened upward is disposed above the turntable 18. Therefore, the processing liquid discharged around the substrate W is picked up by the cup body 12. In addition, the processing liquid received by the cup body 12 is sent to a recovery device or a waste liquid device (not shown).

FIG. 7 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1.

The control device 3 is configured using, for example, a microcomputer. The control device 3 includes a computation unit such as a CPU, a memory unit such as a fixed memory element, a hard disk drive, and an input / output unit. The memory unit stores programs executed by the arithmetic unit.

The control device 3 controls the operations of the rotary motor 16, the nozzle moving unit 22, the shutter rotating unit 27, and the opposing member elevating unit 28 according to a predetermined program. The control device 3 controls the chemical liquid valve 21, the flushing liquid valve 37, the central gas valve 39, the surrounding gas valve 42, the first flow adjustment valve 43, the cleaning liquid upper valve 47, the suction valve 51, and the cleaning liquid lower valve. 54. Opening and closing operations of the second flow control valve 55 and the like.

FIG. 8 is a flowchart for explaining a substrate processing example of the substrate processing apparatus 1. FIG. 9 is a schematic sectional view for explaining the step (S2) of the medicinal solution. Figure 10 is used to say A schematic cross-sectional view of the rinse step (S3). FIG. 11 is a schematic sectional view for explaining a spin drying step (S4).

Hereinafter, examples of substrate processing will be described with reference to FIGS. 2, 7 and 8. And it is suitable to refer to FIG. 9 to FIG. 11. This substrate processing example is a photoresist removal process for removing the photoresist formed on the substrate W.

When the substrate W is subjected to photoresist removal processing by the processing unit 2, the substrate W after the ion implantation treatment at a high dose is carried into the interior of the cabin 4 (step S1). Before the substrate W is carried in, the surrounding gas valve 42 is opened, and an inert gas from the surrounding gas pipe 41 is supplied to the cylindrical gap 29. At this time, the supply flow rate (that is, the discharge flow rate from the surrounding gas discharge port 30) is adjusted to a small flow rate (about 10 (liters / minute)) by adjustment of the first flow rate adjustment valve 43. It is assumed that the substrate W carried in is a processor that has not been subjected to ashing of the photoresist.

Specifically, the control device 3 causes the substrate transfer robot CR holding the substrate W in a state where the opposing member 7 and the nozzle 8 are retracted to the retracted position and the chemical liquid nozzle 19 is retracted from above the rotary chuck 5 (see FIG. 1) A robot H (see FIG. 1) enters the inside of the cabin 4, and transfers the substrate W to the rotary chuck 5 with the surface of the substrate W (photoresist forming surface) facing upward. Then, the control device 3 starts to rotate the substrate W by the rotation motor 16. Then, the substrate W is raised to a predetermined liquid processing speed (in the range of 1 to 500 rpm, for example, about 10 rpm), and maintained at the liquid processing speed.

If the rotation speed of the substrate W reaches the liquid processing speed, the control device 3 then performs a step of supplying a high-temperature SPM chemical solution to the substrate W (step S2). In the medicinal solution step (S2), the SPM discharged from the medicinal solution nozzle 19 is deposited on the central portion of the upper surface of the substrate W.

Specifically, the control device 3 controls the nozzle moving unit 22 to move the chemical liquid nozzle 19 from the original position to the center position. Thereby, the chemical | medical solution nozzle 19 is arrange | positioned above the center part of the board | substrate W.

After the chemical liquid nozzle 19 is disposed above the substrate W, the control device 3 opens the chemical liquid valve 21. Thereby, a high-temperature (for example, about 170 ° C. to about 180 ° C.) SPM is discharged from the discharge port of the chemical liquid nozzle 19, and the liquid is deposited on the central portion of the upper surface of the substrate W. The SPM deposited on the upper surface of the substrate W receives centrifugal force generated by the rotation of the substrate W and flows outward along the upper surface of the substrate W. Thereby, as shown in FIG. 9, the entire upper surface of the substrate W is covered by the SPM liquid film 70. Thereby, the photoresist is removed from the surface of the substrate W with a high-temperature SPM.

In this chemical liquid step (S2), a large amount of SPM mist is generated around the upper surface of the substrate W by the supply of the high-temperature SPM to the substrate W, and this SPM mist will float above the substrate W. In the medicinal solution step (S2), although the opposing member 7 and the nozzle 8 are located at the retreat position (for example, the substrate facing surface 23a of the blocking plate 23 is separated from the upper surface of the turntable 18 by a predetermined interval W2 (see FIG. 9). The interval W2 is, for example, about 150 mm), and a small flow rate (for example, about 10 (liters / minute)) of inert gas is discharged from the surrounding gas discharge port 30, but due to the SPM in the chemical solution step (S2) The amount of mist generated is large, so it is still possible for the SPM mist to enter the cylindrical gap 29 from the surrounding gas outlet 30. In this case, the SPM mist may adhere to the inner peripheral surface 25 a of the blocking plate 23, the inner peripheral surface 24 a of the rotation shaft 24, or the outer peripheral surface 31 a of the main body 31. It can be speculated that the SPM mist will enter the depth of the cylindrical gap 29. In addition, the SPM mist may adhere to the lower end portion (opposing portion) 8a of the nozzle 8. The chemical liquid mist (SPM mist, etc.) adhering to these nozzles 8 becomes dust particles and causes the substrate to be contaminated.

After a predetermined period of treatment of the medicinal solution has begun since the discharge of SPM, Step of administering liquid medicine (S2). Specifically, the control device 3 closes the liquid medicine valve 21 to stop the discharge of the high-temperature SPM from the liquid medicine nozzle 19, and then controls the nozzle moving unit 22 to retreat the liquid medicine nozzle 19 to the retreat position.

Next, a washing step of supplying a washing liquid onto the upper surface of the substrate W is performed (step S3). Specifically, the control device 3 controls the opposing member elevating unit 28 and, as shown in FIG. 10, arranges the opposing member 7 and the nozzle 8 at an upper intermediate position. This upper intermediate position is, for example, a position where the substrate facing surface 23a of the blocking plate 23 is separated from the upper surface of the turntable 18 upward by about 60 mm.

Then, the control device 3 opens the flushing liquid valve 37. Thereby, as shown in FIG. 10, the rinse liquid is discharged from the processing liquid discharge port 35 of the nozzle 8 toward the upper center portion of the substrate W. The rinsing liquid discharged from the processing liquid discharge port 35 is deposited on the central portion of the upper surface of the substrate W and receives centrifugal force generated by the rotation of the substrate W, and flows toward the peripheral edge portion of the substrate W on the upper surface of the substrate W. Then, the SPM on the substrate W is pushed toward the outside by the rinsing liquid, and is discharged toward the periphery of the substrate W. Therefore, the SPM liquid film 70 on the substrate W is covered with the rinsing liquid on the entire surface of the substrate W The liquid film 80 is replaced. That is, the SPM is rinsed with a rinse solution. Then, if a predetermined time has passed since the flushing liquid valve 37 was opened, the control device 3 closes the flushing liquid valve 37 to stop the flushing liquid from being discharged from the processing liquid discharge port 35.

Next, a spin-drying step of drying the substrate W is performed (step S4). Specifically, the control device 3 controls the opposing member elevating unit 28 to lower the opposing member 7 and arranges the opposing member 7 at an approach position. This approaching position is, for example, a position where the substrate facing surface 23a of the blocking plate 23 is separated from the upper surface of the turntable 18 upward by about 1.5 mm, and when the opposing member 7 is located at the proximity position, the blocking plate 23 lifts the substrate W Cut off from the space around it.

In addition, the control device 3 controls the rotation motor 16 to accelerate the substrate W to a drying rotation speed (for example, several thousand rpm) which is larger than the rotation speed of the chemical solution step (S2) and the washing step (S3), and uses this drying rotation speed to The substrate W rotates. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W. In this manner, the liquid is removed from the substrate W, and the substrate W is further dried.

Further, in the spin-drying step (S4), the control device 3 controls the shutter rotation unit 27 to rotate the shutter 23 and the rotation shaft 24 at high speed in the same direction and at substantially the same speed as the substrate W.

In the spin drying step (S4), the control device 3 adjusts the first flow adjustment valve 43 so that the flow rate of the inert gas supplied from the surrounding gas pipe 41 to the cylindrical gap 29 is increased to a large flow rate (for example, about 150 (liters) /Minute)). As a result, a stable airflow of an inert gas flowing from the central portion of the substrate W to the peripheral portion is generated in the gap between the upper surface of the substrate W and the substrate facing surface 23a of the blocking plate 23, and further, The ambient gas is interrupted from its surroundings.

Then, if a predetermined time elapses after the high-speed rotation of the substrate W is started, the control device 3 controls the rotation motor 16 to stop the rotation of the substrate W driven by the rotary chuck 5 and controls the interruption plate rotation unit 27 to cause the interruption plate 23 and The rotation of the rotary shaft 24 is stopped. In addition, the control device 3 adjusts the first flow rate adjustment valve 43 so that the flow rate of the inert gas supplied from the surrounding gas pipe 41 to the cylindrical gap 29 is reduced to a small flow rate (for example, about 10 (liters / minute)).

Next, the substrate W is carried out from the cabin 4 (step S5). Before the substrate W is carried out, the control device 3 controls the opposing member elevating unit 28 to raise the opposing member 7 and the nozzle 8 to the retreat position.

Next, the control device 3 causes the robot H of the substrate transfer robot CR Enter the cabin 4. Then, the control device 3 causes the robot H of the substrate transfer robot CR to hold the substrate W on the rotary chuck 5. Then, the control device 3 retracts the robot hand H of the substrate transfer robot CR from inside the cabin 4. Thereby, the processed substrate W is carried out from the cabin 4.

In addition, in the above substrate processing example, after the high-temperature SPM is supplied to the substrate W in the chemical solution step (S2), H ₂ O _{2 may be} supplied to the upper surface of the substrate W. In this case, the SPM on the substrate W is replaced by H ₂ O _2. Soon, the entire upper surface of the substrate W is covered by a liquid film of H ₂ O ₂ .

In the substrate processing example described above, the second chemical liquid step of supplying the chemical liquid onto the upper surface of the substrate W may be performed after the rinsing step (S3). In this case, it is preferable that the chemical solution used in the second chemical solution step is a chemical solution different from the chemical solution used in the chemical solution step (S2). When a high-temperature SPM is used as the chemical solution in the chemical solution step (S2), hydrofluoric acid and SC1 (a mixed solution containing NH ₄ OH and H ₂ O ₂ ) can be used as the chemical solution in the second chemical solution step. In the case where the second chemical liquid step is performed, the second cleaning step of rinsing the chemical liquid on the substrate W with the cleaning liquid is then performed.

However, in the chemical liquid step (S2), a large amount of chemical liquid mist (SPM mist, etc.) generated around the upper surface of the substrate W may adhere not only to the lower end portion 8a of the nozzle 8, but also to the outer periphery of the body 31. Surface 31a, the inner peripheral surface 24a of the rotation shaft 24, or the inner peripheral surface 25a of the blocking plate 23. The chemical liquid mist (SPM mist, etc.) adhering to these nozzles 8 becomes dust particles and causes the substrate to be contaminated. In the spin-drying step (S4), dust particles adhering to the inner peripheral surface 24a or the outer peripheral surface 31a of the main body 31 due to a large flow of inert gas flowing through the cylindrical gap 29 may be discharged from the surrounding gas discharge port 30 . For example, in the spin-drying step (S4), if the dust particles are discharged onto the substrate W, the substrate W after the chemical solution treatment will be contaminated.

In order to clean the chemical liquid mist adhering to the outer surface of the body 31 of the nozzle 8 (the outer peripheral surface 31a or the facing surface 31b), a countermeasure for blowing the cleaning liquid to the nozzle 8 from below (the countermeasure described below) may be considered. Washing step). However, in this countermeasure, only a portion near the surrounding gas outlet 30 in the cylindrical gap 29 can be cleaned. As described above, since the chemical liquid mist (SPM mist, etc.) enters the depth of the cylindrical gap 29, the entire area of the cylindrical gap 29 needs to be cleaned well.

Therefore, in this substrate processing example, the nozzle cleaning step of the cleaning nozzle 8 is prepared (step S6. It is shown by a dotted line in FIG. 8). The nozzle cleaning step (S6) is not a step that is performed every time in the execution of the substrate processing example, but is performed in a substrate processing every predetermined time or every predetermined number of pieces. That is, after the substrate W is unloaded, when it is not the time for nozzle cleaning, a new substrate process is started for the next substrate W. On the other hand, after the substrate W is unloaded, if the timing for nozzle cleaning is reached, a nozzle cleaning step is performed (S6).

In the nozzle washing step (S6), the cylindrical gap 29 is washed with a washing liquid, and the lower end portion 8a of the nozzle 8 (that is, the treatment liquid discharge outlet 35 and the central gas are discharged by the washing liquid). The area of the outlet 36) is washed (the facing portion washing step).

Fig. 12 is a flowchart for explaining the nozzle cleaning step (S6) shown in Fig. 8. FIG. 13 is a schematic sectional view for explaining the nozzle cleaning step (S6).

From the beginning of the nozzle washing step (S6), the surrounding gas valve 42 is in an open state. At this time, the supply flow rate of the inert gas from the surrounding gas pipe 41 to the cylindrical gap 29 is adjusted to a small flow rate (for example, about 10 (liters / minute)).

In the nozzle cleaning step (S6), the control device 3 controls the opposing member elevating unit 28 to lower the opposing member 7 and the nozzle 8 and is arranged at a lower intermediate position (step T1). This lower middle position is, for example, the facing surface 31b of the body 31 of the nozzle 8. A position separated by an interval W3 (refer to FIG. 13) upward from the upper surface of the turntable 18. The interval W3 is, for example, about 10 mm.

After arranging the opposing member 7 and the nozzle 8 at the lower middle position, the control device 3 controls the shutter rotation unit 27 to rotate the shutter 23 at a nozzle cleaning speed (for example, about 800 rpm) (T2: rotation step) . Accordingly, the blocking plate 23 and the rotation shaft 24 are relatively rotated with respect to the nozzle 8. In addition, at the same time as the rotation of the blocking plate 23 and the rotation shaft 24 is started, the control device 3 controls the rotation motor 16 to keep the rotation stage 18 at a predetermined low rotation speed (for example, about 100 rpm).

When the rotation speed of the blocking plate 23 reaches the nozzle washing speed, the control device 3 opens the washing liquid upper valve 47 (see FIG. 2) and the washing liquid lower valve 54 (see FIG. 2) (step T3).

By opening the washing liquid upper valve 47, the washing liquid is discharged obliquely downward from the washing liquid discharge port 32 (washing liquid discharge step). The discharge flow rate of the cleaning liquid discharged from the cleaning liquid discharge port 32 is, for example, about 800 (liters / minute). Thereby, as shown in FIG. 5 and FIG. 6, while the opposing member 7 is rotated relative to the body 31 of the nozzle 8, the cleaning liquid discharge outlet 32 formed on the outer peripheral surface 31 a of the body 31 is turned toward the rotation shaft 24. The inner peripheral surface 24a spit out the cleaning solution. As a result, a downward swirling flow R is formed in the cylindrical gap 29.

In addition, in synchronization with the discharge of the washing liquid from the washing liquid discharge port 32, an inert gas is supplied from a position higher than the supply position of the washing liquid from the washing liquid discharge port 32 in the cylindrical gap 29 ( Gas supply step). Thereby, since the rising of the washing | cleaning liquid supplied to the cylindrical gap 29 can be suppressed, the downward swirling flow R can be formed more favorable.

In addition, by opening the cleaning liquid lower valve 54, the nozzle 52 from the lower surface toward the lead The cleaning liquid is discharged vertically, whereby the cleaning liquid is blown to the lower end portion (opposite portion) 8a of the nozzle 8, and the lower end portion 8a is washed (opposite portion washing step). At this time, the discharge flow rate of the cleaning liquid from the lower nozzle 52 is such that the cleaning liquid blown upward from the lower nozzle 52 reaches the lower end portion of the nozzle 8 disposed at the lower intermediate position (the position shown in FIG. 12). The flow rate of 8a is, for example, about 1500 (liters / minute).

The discharge of the washing liquid from the washing liquid discharge port 32 and the lower nozzle 52 is continued until a predetermined washing period (for example, about 30 seconds) elapses (step T4).

When the washing period has elapsed since the discharge of the washing liquid (YES in step T4), the control device 3 closes the washing liquid upper valve 47 and the washing liquid lower valve 54 (step T5). Thereby, the discharge of the washing liquid from the washing liquid discharge port 32 and the discharge of the washing liquid from the lower nozzle 52 are stopped.

After closing the washing liquid upper valve 47, the control device 3 opens the suction valve 51. As a result, the cleaning liquid in the downstream portion of the branched position 48a in the cleaning liquid supply pipe 48 is sucked (step T6). After the SPM is attracted to the front end surface (lower end surface) of the SPM, the control device 3 closes the suction valve 51 after retracting to the predetermined position.

In addition, the control device 3 controls the shutter rotation unit 27 to stop the rotation of the shutter 23 and the rotation shaft 24 after closing the washing liquid upper valve 47 and the washing liquid lower valve 54 (step T7), and controls The opposing member elevating unit 28 raises the opposing member 7 and the nozzle 8 to the retracted position (step T8). Thereby, the nozzle washing step is ended (S6).

As described above, according to this embodiment, while the main body 31 of the counter member 7 and the nozzle 8 are relatively rotated, the cleaning liquid discharge port 32 formed on the outer peripheral surface 31 a of the main body 31 faces the inner peripheral surface 24 a of the counter member 7. Spit out the cleaning solution. Since the inner peripheral surface 24a rotates with respect to the outer peripheral surface 31a, the washing liquid discharged from the washing liquid discharge port 32 is pulled by the rotation of the inner peripheral surface 24a and flows downward while rotating. That is, in A swirl is generated in the cylindrical gap 29. Therefore, centrifugal force and gravity act on the cleaning liquid flowing in the cylindrical gap 29, and by such physical force, the adhesion to the inner peripheral surface 25a, the inner peripheral surface 24a, and / or the outer peripheral surface 31a can be removed. Pollutants. Thereby, the cylindrical gap 29 can be washed well.

In addition, the cleaning liquid supply unit 10 includes a cleaning liquid pipe 44 inserted into the inside of the main body 31. The cleaning liquid pipe 44 includes a vertical pipe 45 and a connection pipe 46 extending diagonally downward from the upper end of the vertical pipe 45. This makes it possible to easily realize a configuration in which the cleaning liquid pipe 44 is inserted into the body 31 and the cleaning liquid is discharged from the cleaning liquid discharge port 32 formed on the outer peripheral surface 31a toward the inner peripheral surface 24a.

Since the facing member 7 is rotatable, it is necessary to arrange the cleaning liquid pipe 44 so as not to interfere with the facing member 7. In this embodiment, since the cleaning liquid pipe 44 is inserted into the main body 31, the interference liquid is not disturbed, and the cleaning liquid can be supplied to the cleaning liquid discharge port 32 satisfactorily.

In addition, as described above, a labyrinth is provided in the connecting passage 57 (refer to FIG. 2) so as to block the ambient gas in the drive component housing space 56 (refer to FIG. 2) and the ambient gas in the cabin 4 (refer to FIG. 2). Waiting gas seal 58 (see FIG. 2). If liquid such as cleaning liquid is supplied to the driving component storage space 56, it may affect the driving components in the driving component storage space 56. Therefore, it is desirable that the liquid such as cleaning liquid does not enter the connecting channel 57 from the cylindrical gap 29. . Since the cleaning liquid discharge port 32 is disposed below the connection position 29 a of the connecting passage 57 of the cylindrical gap 29, it is difficult for the cleaning liquid to enter the connecting passage 57. In particular, in the present embodiment, the cleaning liquid is discharged obliquely downward from the cleaning liquid discharge port 32, and in synchronization with the discharge of the cleaning liquid from the cleaning liquid discharge port 32, it is from above in the cylindrical gap 29 Since the inert gas is supplied, the rise of the cleaning liquid supplied to the cylindrical gap 29 can be reliably suppressed. Thereby, the downward swirling flow R can be formed favorably.

In addition, in the present embodiment, the cleaning of the cylindrical gap 29 (the discharge of the cleaning liquid from the cleaning liquid discharge port 32) and the cleaning of the lower end portion 8a of the nozzle 8 (the opposite portion cleaning step) are performed simultaneously. ). Thereby, compared with the case where the cleaning of the cylindrical gap 29 and the cleaning of the lower end portion 8a of the nozzle 8 are performed at different times, the cleaning of the nozzle 8 can be performed in a short time.

FIG. 14 is a schematic cross-sectional view illustrating a configuration example of a processing unit 202 according to another embodiment of the present invention.

In the embodiment shown in FIG. 14, the same components as those in the case of FIGS. 1 to 13 are given the same parts as those in the above-mentioned embodiment (the embodiments shown in FIGS. 1 to 13), and description thereof is omitted. The main difference between the processing unit 202 and the processing unit 2 of the above-mentioned embodiment is that in the processing liquid processing, the facing member 207 is rotatably supported by the rotary chuck 205 as a unit. That is, the opposing member 207 is a driven-type opposing member (interrupting member) that rotates with the rotation chuck 205.

The processing unit 202 includes: a cabin 4; a rotary chuck (substrate holding unit) 205, which holds a piece of the substrate W in the cabin 4 in a horizontal posture, and makes the substrate W wrap around a vertical axis of rotation A1 passing through the center of the substrate W Rotate; medicinal solution supply unit 6; facing member 207 facing above the substrate W held by the rotating chuck 205; nozzle 8, which is inserted up and down in the central portion of the facing member 207; cleaning liquid supply Unit 10; lower unit 11; and cup body 12.

The rotary chuck 205 is the same as the rotary chuck 5, and a clamping chuck that holds the substrate W in a horizontal direction and holds the substrate W horizontally is used. The rotation chuck 205 includes a rotation motor 16, a rotation shaft 17, and a disk-shaped rotation stage 218, which is mounted on the upper end of the rotation shaft 17 substantially horizontally. A plurality of (3 or more. For example, 6) clamps are arranged on the circumference of the rotation table 218 with the rotation axis A1 as the center. Component 9. A plurality of (3 or more) opposing member support portions 231 for supporting the opposing member 207 from below are arranged on the circumference of the rotation table 218 with the rotation axis A1 as the center. The distance between the opposing member support portion 231 and the rotation axis A1 is set larger than the distance between the clamping member 9 and the rotation axis A1.

In addition, the rotary chuck 205 is not limited to a clamping type. For example, the substrate W can be held in a horizontal posture by vacuum-adsorbing the back surface of the substrate W, and in this state, it can be rotated about a vertical axis of rotation. A vacuum suction type (vacuum chuck) for rotating the substrate W held by the spin chuck 205.

FIG. 15 is an enlarged cross-sectional view of the facing member 207 included in the processing unit 202. The facing member 207 will be described with reference to FIGS. 14 and 15.

The opposing member 207 includes: a blocking plate 223; an engaging portion 232, which is movably mounted on the blocking plate 223; and a supporting portion 233, which is mounted on the front end of the supporting arm 226 and is engaged with the engaging portion 232. Combined to support the blocking plate 223 from above.

The blocking plate 223 has a disc shape having a larger diameter than the substrate W. The blocking plate 223 has a circular substrate facing surface 223a with a lower surface thereof facing the entire upper surface of the substrate W, a ring-shaped crotch portion 223b protruding downward from a peripheral edge portion of the substrate facing surface 223a, and The rotary chuck abutting portion 223c protruding slightly inward from the peripheral edge of the substrate facing surface 223a. A through hole 225 is formed in the central portion of the substrate facing surface 223a to penetrate the facing member 207 vertically. The through holes 225 are defined by a cylindrical inner peripheral surface 225a. A tapered surface may be formed at the lower end portion of the inner peripheral surface 225a as it expands outward as it goes downward.

The engaging portion 232 is connected to the upper surface of the blocking plate 223, has a cylindrical portion 230 fixed in a state surrounding the periphery of the through hole 225, a flange portion 234 extending radially outward from the upper end of the cylindrical portion 230, and is formed The first unevenness on the flange portion 234 Department 235. The flange portion 234 is located higher than the flange support portion 229 to be described later of the support portion 233, and the outer periphery of the flange portion 234 has a larger diameter than the inner periphery of the flange support portion 229.

The first concavo-convex portion 235 is provided by alternately arranging a ring-shaped concave portion and a ring-shaped convex portion concentrically. In other words, the first uneven portion 235 is comb-shaped in cross section.

The support portion 233 includes, for example, a substantially circular plate-shaped support portion body 236; a horizontal flange support portion 229 centered on the central axis A3; and a connection portion 237 connecting the support portion body 236 and the flange support portion 229; and The second uneven portion 238 is formed below the flange portion 234. The support body 236 is fixed to the front end of the support arm 226.

The second uneven portion 238 is opposed to the first uneven portion 235 of the engaging portion 232. The second concave-convex portion 238 is provided by concentrically-arranging a circular-shaped concave portion and a circular-shaped convex portion alternately. In other words, the second uneven portion 238 is comb-shaped in cross section. In a state where the support arm 226 is in the lower position (a state where the blocking plate 223 is supported by the rotary chuck 205), the first concave-convex portion 235 and the second concave-convex portion 238 are engaged with each other with a slight gap, and the The uneven portion 238 and the first uneven portion 235 define a labyrinth 240.

The support arm 226 is supported by an arm support shaft 241 that extends substantially vertically on the side of the rotary chuck 205. An arm swinging unit 242 composed of a motor or the like is coupled to the arm support shaft 241. An arm elevating unit 245 including a servo motor, a ball screw mechanism, and the like is coupled to the arm supporting shaft 241.

With the arm swing unit 242, the support arm 226 can be swung in the horizontal plane with the vertical swing axis A2 set on the side of the rotary chuck 205 as the center. By this swing, the opposing member 207 can be rotated about the swing axis A2.

The nozzle 8 is the same as that in the embodiment shown in FIGS. 1 to 13 and is surrounded by a cylindrical gap formed around the nozzle 8. This cylindrical gap has the same configuration as the cylindrical gap 29 of the above-mentioned embodiment, and therefore the same reference numerals are assigned, and detailed descriptions of the cylindrical gap are omitted. In this embodiment, the nozzle 8 has a basic form as a scanning nozzle which can change the supply position of the processing fluid on the substrate W.

With the arm lifting unit 245, the support arm 226 can be raised and lowered between the lower position (the position shown in FIG. 15) and the upper position (the position shown in FIG. 14), thereby blocking the opposing member 207. The plate 223 is in a processing position (position shown in FIG. 15) close to the upper surface of the substrate W held by the rotary chuck 205, and a retreat position (position shown in FIG. 14) that is largely retracted above the rotary chuck 205 ).

Specifically, in a state where the support arm 226 is in the upper position, the flange support portion 229 and the flange portion 234 of the support portion 233 are engaged to support the engagement portion 232, the blocking plate 223, and the nozzle 8 on the support. Department 233. That is, the blocking plate 223 is suspended by the support arm 226.

In a state where the support arm 226 is in the upper position, the projection 243 protruding above the flange support portion 229 is engaged with the hole 244 formed in the flange portion 234 at intervals in the circumferential direction, thereby blocking the shutter. 223 is positioned on the support portion 233 in the circumferential direction.

When the arm elevating unit 245 lowers the support arm 226 from the upper position, the blocking plate 223 also descends from the retreat position. Then, when the rotating chuck contact portion 223c of the blocking plate 223 abuts against the opposing member support portion 231, the blocking plate 223 and the nozzle 8 are supported by the opposing member support portion 231. Then, when the arm lifting unit 245 lowers the support arm 226, the engagement between the flange support portion 229 of the support portion 233 and the flange portion 234 is blocked. When released, the engaging portion 232, the blocking plate 223, and the nozzle 8 are detached from the support portion 233, and are supported by the rotating chuck 205. In this state, the blocking plate 223 is rotated with the rotation of the rotary chuck 205 (the rotary table 218).

When processing the substrate W held on the rotary chuck 205, the control device 3 controls the arm swinging unit 242, swings the support arm 226 about the arm support shaft 241, and arranges the facing member 207 above the rotary chuck 205 . In this state, the arm lifting unit 245 lowers the support arm 226. After the engaging portion 232, the blocking plate 223, and the nozzle 8 are transferred to the rotary chuck 205, the support arm 226 is stopped from descending in the lower position. Thereby, the blocking plate 223 is arrange | positioned at a processing position (position shown in FIG. 15). In this state, the blocking plate 223 rotates with the rotation of the rotary chuck 205 (the rotary table 218). That is, in a state where the substrate W is held in the rotary chuck 205 and the support arm 226 is arranged in the lower position, the rotary table 218, the substrate W and The blocking plate 223 rotates around the rotation axis A1.

In this state, that is, the state where the blocking plate 223 is disposed at the processing position (the position shown in FIG. 15) (the state where the support arm 226 is at the lower position), the first uneven portion 235 and the second uneven portion 238 are not in contact with each other. And close to each other. The first concave-convex portion 235 and the second concave-convex portion 238, which are comb-shaped in cross section, are meshed with each other with a slight gap therebetween, and thereby a maze 240 is defined between the support portion 233 and the engagement portion 232. The labyrinth 240 communicates with the cylindrical gap 29. During the processing of the substrate W, when the blocking plate 223 is rotated with the rotation of the spin chuck 205, the first uneven portion 235 is rotated, but the second uneven portion 238 is not rotated.

The maze 240 is connected to a gas supply channel 250 for supplying a gas (for example, an inert gas such as nitrogen) to the maze 240. The gas supply channel 250 includes: a first flow channel 251 extending from the support arm 226 to the support portion body 236; a circular ring The first branch pipe 252 is connected to the first flow path 251; a plurality of gas injection ports 255 are opened below the support body 236; the second branch pipe 254 is connected to each gas jet Port 255; and one or plural second flow passages 253, which connect the first branch pipe 252 and the second branch pipe 254. The first flow path 251 of the gas supply path 250 is supplied with a gas from a gas supply source. An example of the gas supplied to the first flow path 251 is an inert gas. The inert gas is, for example, any of nitrogen and clean air. The gas supplied to the gas supply channel 250 is discharged from the gas injection port 255 toward the maze 240. The gas discharged from the gas injection port 255 is supplied to the labyrinth 240 and then to the cylindrical gap 29. In other words, a downward gas flow of the gas is formed in the cylindrical gap 29 by the discharge of the gas from the gas injection port 255. In addition, the discharge of the gas from the gas injection port 255 may function as a gas seal in the maze 240 to prevent the entry of ambient gas from the cylindrical gap 29 side.

The cleaning liquid discharge port 32 (refer to FIG. 3 and the like) is arranged below the connection position 29 b of the labyrinth of the cylindrical gap 29.

In this embodiment, as in the case of the embodiment shown in Figs. 1 to 13, a nozzle cleaning step is performed (S6. See Figs. 8 and 12).

In this embodiment, by performing the nozzle cleaning step (S6), in addition to the effects described in the embodiment shown in Figs. 1 to 13, the following effects can be obtained.

That is, it is not desirable that liquid such as a cleaning liquid is supplied into the maze 240. Since the cleaning liquid discharge port 32 (see FIG. 3 and the like) is disposed below the connection position 29 b of the labyrinth of the cylindrical gap 29, the cleaning liquid discharged from the cleaning liquid discharge port 32 is difficult to enter the maze 240. In particular, the cleaning liquid is discharged diagonally downward from the cleaning liquid discharge port 32, and is synchronized with the discharge of the cleaning liquid from the cleaning liquid discharge port 32, Since the inert gas is supplied from above to the cylindrical gap 29, it is possible to reliably suppress the rise of the cleaning liquid supplied to the cylindrical gap 29. Thereby, entry of the washing liquid into the maze 240 can be reliably prevented.

The two embodiments of the present invention have been described above, but the present invention may be implemented in other forms.

For example, in the medicinal solution step (S2), as in the case of the above embodiment, in the case of using SPM as the medicinal solution, in order to remove the photoresist formed on the upper surface (surface) of the substrate W well, a substrate facing A method in which a lower temperature SPM is supplied on the upper surface of the W and the upper surface of the substrate W is heated by an infrared heater or the like. In this case, a large amount of SPM mist is also generated around the upper surface of the substrate W in the chemical solution step (S2). This SPM mist may enter the cylindrical gap 29 from the surrounding gas discharge port 30, so use a nozzle to clean it. The cleaning of the nozzle 8 in step (S6) can effectively respond.

In the chemical solution step (S2), a chemical solution other than SPM may be used as the chemical solution. Specifically, the chemical solution may also be H ₂ O ₂ , sulfuric acid, IPA (isopropanol), hydrofluoric acid, SC1 (a mixed solution containing NH ₄ OH and H ₂ O ₂ ), and SC2 (containing HCl and H ₂ O ₂ mixed solution), ammonium fluoride, buffered hydrofluoric acid (mixed solution of hydrofluoric acid and ammonium fluoride), FFOM (liquid containing HF and O ₃ ), AOM (liquid containing NH ₄ OH and O ₃ ), HOM (liquid containing H ₂ SO ₄ and O ₃ ), etc.

In addition, although the case where the main body 31 of the nozzle 8 is columnar (cylindrical) was demonstrated in each said embodiment, the main body 31 may be cylindrical. That is, the processing fluid pipe (the processing liquid pipe 33 or the gas pipe 34) and the cleaning liquid pipe 44 may be inserted into the cylindrical body.

In addition, in each of the embodiments described above, the case where the body 31 of the nozzle 8 is an outer cylinder is described, but the outer peripheral surface of the body may not be a cylindrical surface, but It can be constituted by a polygonal cylindrical surface centered on the rotation axis A0. In this case, a substantially cylindrical cylindrical gap 29 is formed between the inner peripheral surfaces 25 a and 24 a of the facing member 7 and the outer peripheral surface 31 a of the main body 31. Similarly, the inner peripheral surfaces 25a and 24a of the facing member 7 may be constituted by polygonal cylindrical surfaces. However, in order to realize the smooth flow of the swirling flow R, the inner peripheral surfaces 25a and 24a are preferably cylindrical surfaces.

In addition, although the case where the connecting passage 57 communicates with the cylindrical gap 29 and the drive-part accommodation space 56 has been described, the connecting passage 57 may be a communicating with the cylindrical gap 29 and other spaces. Specifically, the connecting passage 57 may communicate the cylindrical gap 29 and the inside of the cabin 4.

In addition, the cleaning solution used for the nozzle 8 is not limited to water such as deionized water (DIW), and a cleaning solution (for example, SC1 (a mixed solution containing NH ₄ OH and H ₂ O ₂ ) may also be used. )).

In addition, in the nozzle cleaning step (S6), as a method of relatively rotating the nozzle 8 and the facing member 7 (rotating shaft 24), the nozzle 8 can be rotated while the facing member 7 is stationary, and the facing Both the member 7 and the nozzle 8 rotate in opposite directions.

In each of the above embodiments, the center axis nozzle provided with the processing liquid pipe 33 (processing fluid pipe) and the central gas pipe 34 (processing fluid pipe) is described as an example of the nozzle 8. The processing fluid piping may also include one or more processing liquid piping, but does not include gas piping, or it may also include one or more gas piping, but does not include processing liquid piping.

In addition, in the nozzle cleaning step (S6), the rotation of the rotary shaft 24 and the blocking plate 23 may be performed without rotating the rotary table 18 to make it stand still.

In addition, in the nozzle cleaning step (S6), the ambient gas may be stopped. The piping 41 is supplied to the inert gas in the cylindrical gap 29.

In addition, the cleaning of the cylindrical gap 29 (the discharge of the cleaning liquid from the cleaning liquid discharge port 32) and the cleaning of the lower end portion 8a of the nozzle 8 (the cleaning liquid from the lower unit 11) can be performed at different timings. Of blowing).

In addition, the discharge direction of the washing liquid from the washing liquid discharge port 32 is not limited to the obliquely downward direction, and may be a horizontal direction. In this case, as in the above embodiment, it is desirable that a downflow of an inert gas is formed in the nozzle cleaning step (S6).

In addition, the processing fluid pipe may not be inserted into the main body 31. That is, the body 31 may not be the body of the nozzle 8.

In addition, the washing liquid pipe 44 may not include a vertical pipe 45 and a connecting pipe 46 connecting the lower end of the vertical pipe 45 and the washing liquid discharge port 32, but the bending of the washing liquid pipe 44 and The downstream end is connected to the cleaning liquid discharge port 32.

In addition, the cleaning liquid supply unit may supply the cleaning liquid to the cleaning liquid discharge port 32 by a method in which the cleaning liquid pipe 44 is inserted into the inside of the main body 31.

In addition, in each of the above embodiments, the case where the substrate processing apparatus 1 is an apparatus for processing a disc-shaped substrate W has been described. However, the substrate processing apparatus 1 may be a polygonal substrate for processing a glass substrate for a liquid crystal display device. Device of substrate.

Although the embodiments of the present invention have been described in detail, they are only specific examples used for understanding the technical content of the present invention, and the present invention should not be construed as being limited to these specific examples, the scope of the present invention It can only be limited by the scope of additional patent applications.

This application is related to Japanese Patent Application No. 2016-28311 filed with the Japan Patent Office on February 17, 2016, and to the Japanese National Patent Office on January 25, 2017. Corresponding to Japanese Patent Application No. 2017-11643 filed by the Treasury, all the disclosures of these applications are cited and incorporated into this specification.

Claims (10)

A substrate processing apparatus includes: a substrate holding unit for holding a substrate in a horizontal posture; an outer cylindrical body having an outer peripheral surface and an opposite portion facing the central portion of the upper surface of the substrate, and facing Extending in the up-down direction; the opposing member surrounds the outer periphery of the main body, has an inner peripheral surface forming a cylindrical gap with the outer peripheral surface of the main body, and faces the upper surface of the substrate; A discharge port is opened on the outer peripheral surface of the body, and is used to discharge the washing liquid toward the radial outer side of the body; a washing liquid supply unit is used to supply the washing liquid to the washing liquid discharge port; a rotating unit , Which rotates the facing member and the body relatively around an axis of rotation passing through a central portion of the upper surface of the substrate; and a washing control unit, which controls the washing liquid supply unit and the rotating unit, and cleans the cylindrical gap ; The washing control unit executes a rotation step and a washing liquid discharge step, and the rotation step controls the rotation unit to relatively rotate the facing member and the body, The step of cleaning fluid discharge line is synchronized with the rotation step of controlling the cleaning liquid supply means and discharging the cleaning liquid discharge port from said cleaning liquid. For example, the substrate processing apparatus of claim 1, wherein the cleaning liquid supply unit includes a cleaning liquid pipe through which the cleaning liquid flows and is inserted into the body, and a downstream end of the cleaning liquid pipe is connected to the above. The outer peripheral surface of the body is opened to form the cleaning liquid discharge port. The substrate processing apparatus according to claim 2, wherein the cleaning liquid piping includes: a vertical pipe, which extends linearly in the vertical direction; and a connection pipe, which connects the lower end of the vertical pipe and the cleaning liquid discharge outlet. . The substrate processing apparatus according to claim 1 or 2, wherein the cleaning solution discharge port includes an inclined discharge port that discharges the cleaning solution diagonally downward. For example, the substrate processing apparatus of claim 1 or 2 further includes a gas supply unit, which is located at a position higher than a position where the cleaning liquid is discharged from the cleaning liquid discharge port in the cylindrical gap. The cylindrical gap is supplied with gas, and the cleaning control unit further executes a gas supply step, which controls the gas supply unit to supply gas to the cylindrical gap in synchronization with the rotation step and the washing liquid discharge step. The substrate processing apparatus according to claim 1, further comprising a processing fluid pipe for circulating a processing fluid to be supplied on the substrate and inserted into the body, and an opening at a downstream end of the processing fluid pipe is provided. A treatment fluid discharge port is formed. For example, the substrate processing apparatus of claim 1 further includes a washing liquid blowing unit that blows a washing liquid toward the facing portion of the body from below, and the washing control unit further performs a facing portion cleaning step, It controls the washing liquid blowing unit in synchronization with the rotation step and the washing liquid discharge step, and blows washing liquid toward the facing portion to wash the facing portion. A gap cleaning method is used to clean a cylindrical gap which is divided between an outer peripheral surface of a body and an inner peripheral surface of an opposing member. The main body has an opposing portion facing the central portion of the upper surface of the substrate and Extending up and down, the opposing member surrounds the outer periphery of the main body and faces the upper surface of the substrate. The gap cleaning method performs the following steps: an opening is formed on the outer peripheral surface of the main body, and is prepared to face the cylinder A step of spouting the cleaning liquid from the cleaning solution; a step of rotating the facing member and the body relative to each other; and a step of synchronizing the rotation of the cleaning member with the cleaning solution from the cleaning liquid Liquid exhalation step. For example, the gap cleaning method of claim 8 further includes a gas supply step for removing the cleaning liquid from a position above the position where the cleaning liquid is discharged from the cleaning liquid discharge port in the cylindrical gap. The cylindrical gap supplies gas. For example, the gap cleaning method according to claim 8 or 9, further comprising an opposite portion washing step, which is synchronized with the rotation step and the cleaning liquid discharge step, and blows the cleaning liquid toward the opposite portion to be washed. The opposite part.