TW201736009A - Substrate processing apparatus and gap washing method - Google Patents

Substrate processing apparatus and gap washing method Download PDF

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TW201736009A
TW201736009A TW106104899A TW106104899A TW201736009A TW 201736009 A TW201736009 A TW 201736009A TW 106104899 A TW106104899 A TW 106104899A TW 106104899 A TW106104899 A TW 106104899A TW 201736009 A TW201736009 A TW 201736009A
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substrate
cleaning liquid
cleaning
discharge port
liquid
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TW106104899A
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Chinese (zh)
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TWI653104B (en
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森岡利仁
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斯庫林集團股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

A substrate processing apparatus includes a washing liquid supply unit which supplies a washing liquid to a washing liquid discharge port which is open in the outer circumferential surface of a body, a rotation unit which relatively rotates the opposing member and the body around a rotational axis passing through the central portion of the upper surface of the substrate and a washing control unit which controls the washing liquid supply unit and the rotation unit so as to wash the cylindrical gap, where the washing control unit performs a rotation step of controlling the rotation unit so as to relatively rotate the opposing member and the body and a washing liquid discharging step of controlling the washing liquid supply unit so as to discharge a washing liquid from the washing liquid discharge port simultaneously with the rotation step.

Description

基板處理裝置及間隙洗淨方法 Substrate processing device and gap cleaning method

本發明係關於一種使用處理流體對基板之上面進行處理之基板處理方法、及對與基板之上面對向之本體與對向構件之間的間隙進行洗淨之間隙洗淨方法。作為處理對象之基板,例如包含有半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、FED(Field Emission Display)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板、太陽電池用基板等。 The present invention relates to a substrate processing method for processing an upper surface of a substrate using a processing fluid, and a gap cleaning method for cleaning a gap between the body and the opposing member facing the substrate. The substrate to be processed includes, for example, a semiconductor wafer, a liquid crystal display device substrate, a plasma display substrate, an FED (Field Emission Display) substrate, a disk substrate, a disk substrate, a magnet disk substrate, and a light. A cover substrate, a ceramic substrate, a solar cell substrate, or the like.

於半導體裝置或液晶顯示裝置等之製造步驟中,使用有用以處理半導體晶圓或液晶顯示裝置用玻璃基板等基板之基板處理裝置。各一片地處理基板之單片處理式之基板處理裝置,例如包含:旋轉夾頭,其水平地保持基板且使之旋轉;處理液供給單元,其對被保持於旋轉夾頭之基板供給處理液;遮斷構件,其自上方與被保持於旋轉夾頭之基板對向;及中心軸噴嘴,其被收容於形成在遮斷構件之中央部之中央開口。遮斷構件係接近基板之上面而用以將該上面自其周圍之空間遮斷之構件。 In a manufacturing process of a semiconductor device or a liquid crystal display device, a substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used. The single-chip processing type substrate processing apparatus for processing a substrate one by one includes, for example, a rotary chuck that horizontally holds and rotates the substrate, and a processing liquid supply unit that supplies the processing liquid to the substrate held by the rotary chuck The blocking member is opposed to the substrate held by the rotary chuck from above; and the central axis nozzle is housed in a central opening formed in a central portion of the blocking member. The interrupting member is a member that is close to the upper surface of the substrate to interrupt the space from the periphery thereof.

於以此基板處理裝置對基板進行處理之情況下,例如,於使遮斷構件及中心軸噴嘴朝遠離基板之上方之退避位置退避之狀態下,將來自處理液供給單元之處理液供給於基板之上面。伴 隨此處理液之朝基板上面之供給,於基板之上方產生處理液霧氣,此處理液霧氣有可能會進入筒狀間隙,而附著於遮斷構件之內周面或中心軸噴嘴之外周面。因此需要進行筒狀間隙之洗淨。 When the substrate processing is performed by the substrate processing apparatus, for example, the processing liquid from the processing liquid supply unit is supplied to the substrate while the blocking member and the central axis nozzle are retracted away from the retracted position above the substrate. Above. Accompany With the supply of the treatment liquid onto the substrate, a treatment liquid mist is generated above the substrate, and the treatment liquid mist may enter the cylindrical gap and adhere to the inner circumferential surface of the interruption member or the outer circumferential surface of the central shaft nozzle. Therefore, it is necessary to wash the cylindrical gap.

於日本專利特開2010-56218號公報記載有一種方法,其朝遮斷構件之下面供給來自洗淨液噴嘴之洗淨液,以洗淨遮斷板之下面。 Japanese Laid-Open Patent Publication No. 2010-56218 discloses a method of supplying a cleaning liquid from a cleaning liquid nozzle to the lower surface of a shutoff member to wash the lower surface of the shutoff plate.

可考慮日本專利特開2010-56218號公報記載之、藉由自下方將來自洗淨液噴嘴之洗淨液朝筒狀間隙吹吐,而進行筒狀間隙之洗淨。然而,筒狀間隙之間隔通常較狹窄,因此要使自下方吹吐之洗淨液良好地穿過筒狀間隙,較為困能。因而,並不能良好地洗淨筒狀間隙。 The cleaning of the cylindrical gap is performed by blowing the cleaning liquid from the cleaning liquid nozzle into the cylindrical gap from below, as described in Japanese Laid-Open Patent Publication No. 2010-56218. However, since the interval between the cylindrical gaps is generally narrow, it is difficult to make the washing liquid from the lower blowing well pass through the cylindrical gap well. Therefore, the cylindrical gap cannot be cleaned well.

因此,期望能有方法可良好地洗淨被區劃於本體(中心軸噴嘴)之外周面與對向構件(遮斷構件)之內周面之間的筒狀間隙。 Therefore, it is desirable to have a method in which the cylindrical gap partitioned between the outer peripheral surface of the body (the central axis nozzle) and the inner peripheral surface of the opposing member (the blocking member) can be satisfactorily cleaned.

因此,本發明之目的,在於提供一種可良好地洗淨被區劃於本體之外周面與對向構件之內周面之間的筒狀間隙之、基板處理裝置及間隙洗淨方法。 Accordingly, an object of the present invention is to provide a substrate processing apparatus and a gap cleaning method capable of satisfactorily cleaning a cylindrical gap partitioned between an outer circumferential surface of a main body and an inner circumferential surface of a facing member.

本發明提供一種基板處理裝置,其包含:基板保持單元,其用於以水平姿勢保持基板;外廓筒狀之本體,其具有外周面、及與上述基板之上面中央部對向之對向部,且朝上下方向延伸;對向構件,其係圍繞於上述本體之外周,具有在與上述本體之上述外周面之間形成筒狀間隙之內周面,且與上述基板之上面對向;洗淨液吐出口,其於上述本體之上述外周面開口,用以朝上述內周面吐 出洗淨液;洗淨液供給單元,其用以朝上述洗淨液吐出口供給洗淨液;旋轉單元,其使上述對向構件及上述本體,繞通過上述基板之上面中央部之旋轉軸線相對旋轉;及洗淨控制單元,其控制上述洗淨液供給單元及上述旋轉單元,而洗淨上述筒狀間隙;且上述洗淨控制單元,係執行旋轉步驟及洗淨液吐出步驟,該旋轉步驟係控制上述旋轉單元而使上述對向構件及上述本體相對旋轉之步驟,該洗淨液吐出步驟,係與上述旋轉步驟同步,控制上述洗淨液供給單元而自上述洗淨液吐出口吐出洗淨液之步驟。 The present invention provides a substrate processing apparatus including: a substrate holding unit for holding a substrate in a horizontal posture; and an outer cylindrical body having an outer peripheral surface and a facing portion opposite to an upper central portion of the substrate And extending in an up-and-down direction; the opposite member surrounds the outer circumference of the body, and has an inner peripheral surface formed with a cylindrical gap between the outer peripheral surface of the main body and facing the substrate; a washing liquid discharge port that is opened on the outer peripheral surface of the main body for spitting toward the inner peripheral surface a cleaning liquid supply unit for supplying a cleaning liquid to the cleaning liquid discharge port; and a rotating unit for winding the opposite member and the main body around a rotation axis of a central portion of the upper surface of the substrate a relative rotation; and a cleaning control unit that controls the cleaning liquid supply unit and the rotating unit to wash the cylindrical gap; and the cleaning control unit performs a rotation step and a cleaning liquid discharge step, the rotation The step of controlling the rotating unit to relatively rotate the opposing member and the main body, the cleaning liquid discharging step is controlling the cleaning liquid supply unit to be discharged from the cleaning liquid discharge port in synchronization with the rotating step The step of the cleaning solution.

根據此構成,一面使對向構件與本體相對旋轉,一面自形成於本體之外周面之洗淨液吐出口朝對向構件之內周面吐出洗淨液。由於對向構件之內周面相對於本體之外周面而旋轉,因此自洗淨液吐出口吐出之洗淨液,被內周面之旋轉牽引,一面迴旋一面流向下方。亦即,於筒狀間隙形成有朝向下方之旋流。因此,於流動於筒狀間隙之洗淨液上作用有離心力及重力,藉由此等之物理上之力,可除去附著於內周面及/或外周面之汙染物質。藉此,可良好地洗淨筒狀間隙。 According to this configuration, the cleaning liquid is discharged from the washing liquid discharge port formed on the outer peripheral surface of the main body toward the inner peripheral surface of the opposing member while the opposing member and the main body are relatively rotated. Since the inner peripheral surface of the opposing member rotates with respect to the outer peripheral surface of the main body, the washing liquid discharged from the washing liquid discharge port is pulled by the rotation of the inner peripheral surface, and flows downward while swirling. That is, a swirling flow directed downward is formed in the cylindrical gap. Therefore, centrifugal force and gravity act on the washing liquid flowing through the cylindrical gap, and by this physical force, the contaminant adhering to the inner peripheral surface and/or the outer peripheral surface can be removed. Thereby, the cylindrical gap can be well cleaned.

於本發明之一實施形態中,上述洗淨液供給單元,包含用以供洗淨液流通且插通於上述本體之內部之洗淨液配管,且上述洗淨液配管之下游端,係在上述本體之上述外周面開口而形成上述洗淨液吐出口。 In one embodiment of the present invention, the cleaning liquid supply unit includes a cleaning liquid pipe through which the cleaning liquid flows and is inserted into the main body, and the downstream end of the cleaning liquid pipe is attached to The outer peripheral surface of the main body is opened to form the cleaning liquid discharge port.

根據此構成,洗淨液供給單元包含插通於本體之內部之洗淨液配管。亦即,可通過本體之內部將洗淨液供給於形成在本體之外周面之洗淨液吐出口。藉此,可容易實現自形成於本體之外周面之洗淨液吐出口朝對向構件之內周面吐出洗淨液之構成。 According to this configuration, the cleaning liquid supply unit includes the cleaning liquid pipe that is inserted into the inside of the main body. That is, the cleaning liquid can be supplied to the washing liquid discharge port formed on the outer peripheral surface of the main body through the inside of the main body. Thereby, it is possible to easily form a structure in which the washing liquid is discharged from the washing liquid discharge port formed on the outer peripheral surface of the main body toward the inner peripheral surface of the opposing member.

此外,上述洗淨液配管,也可包含:上下方向配管,其於上下方向直線狀延伸;及連接配管,其連接上述上下方向配管之下端與上述洗淨液吐出口。 Further, the cleaning liquid pipe may include a vertical pipe extending linearly in the vertical direction, and a connection pipe connecting the lower end of the vertical pipe and the cleaning liquid discharge port.

根據此構成,洗淨液配管包含上下方向配管、及連接形成於本體之外周面之洗淨液吐出口與上下方向配管之下端的連接配管。藉此,可容易實現一面使洗淨液配管插通於本體之內部,一面自形成於本體之外周面之洗淨液吐出口朝對向構件之內周面吐出洗淨液之構成。 According to this configuration, the cleaning liquid pipe includes a vertical pipe, and a connecting pipe that connects the cleaning liquid discharge port formed on the outer circumferential surface of the main body and the lower end of the vertical pipe. By this means, the cleaning liquid pipe can be easily inserted into the inside of the main body, and the washing liquid is discharged from the washing liquid discharge port formed on the outer peripheral surface of the main body toward the inner peripheral surface of the opposing member.

上述洗淨液吐出口,也可包含朝斜下方吐出洗淨液之傾斜吐出口。根據此構成,由於自洗淨液吐出口朝斜下方吐出洗淨液,因此可抑制供給於筒狀間隙之處理液之上昇。藉此,可良好地形成朝向下方之旋流。 The washing liquid discharge port may include an inclined discharge port that discharges the washing liquid obliquely downward. According to this configuration, since the cleaning liquid is discharged obliquely downward from the washing liquid discharge port, the increase in the processing liquid supplied to the cylindrical gap can be suppressed. Thereby, the swirling flow toward the lower side can be formed favorably.

上述裝置也可進而包含氣體供給單元,其自相較於從該筒狀間隙中之上述洗淨液吐出口吐出洗淨液之位置靠上方的部位,對上述筒狀間隙供給氣體。該情況下,上述洗淨控制單元,也可控制上述氣體供給單元,與上述旋轉步驟及上述洗淨液吐出步驟同步,進而執行朝上述筒狀間隙供給氣體之氣體供給步驟。 The apparatus may further include a gas supply unit that supplies gas to the cylindrical gap from a position above the position at which the cleaning liquid is discharged from the cleaning liquid discharge port in the cylindrical gap. In this case, the cleaning control unit may control the gas supply unit to perform a gas supply step of supplying a gas to the cylindrical gap in synchronization with the rotation step and the cleaning liquid discharge step.

根據此構成,自較在筒狀間隙中供給有來自洗淨液吐出口之洗淨液之供給位置靠上方的部位供給氣體,因此,可抑制供給於筒狀間隙之洗淨液之上昇。藉此,可更進一步良好地形成朝向下方之旋流。 According to this configuration, since the gas is supplied from a portion above the supply position at which the cleaning liquid from the cleaning liquid discharge port is supplied in the cylindrical gap, the increase in the cleaning liquid supplied to the cylindrical gap can be suppressed. Thereby, the swirling flow toward the lower side can be formed more favorably.

上述裝置也可進而包含用以使應被供給於基板之上面之處理流體流通且插通於上述本體之內部之處理流體配管。該情況下,上述處理流體配管之下游端之開口,也可形成處理流體吐出 口。 The apparatus may further include a processing fluid pipe for circulating a processing fluid to be supplied to the upper surface of the substrate and inserted into the inside of the body. In this case, the opening of the downstream end of the treatment fluid pipe can also form a treatment fluid to be discharged. mouth.

根據此構成,本體係用以吐出處理流體之噴嘴之本體。因此,可良好地洗淨該噴嘴之外周面與對向構件之內周面之間的筒狀間隙。 According to this configuration, the system is for discharging the body of the nozzle for treating the fluid. Therefore, the cylindrical gap between the outer circumferential surface of the nozzle and the inner circumferential surface of the opposing member can be favorably cleaned.

上述基板處理裝置,也可還包含自下方朝上述本體之上述對向部吹吐洗淨液之洗淨液吹吐單元。該情況下,上述洗淨控制單元,也可控制上述洗淨液吹吐單元,與上述旋轉步驟及上述洗淨液吐出步驟同步,進而執行朝上述對向部吹吐洗淨液而洗淨該對向部之對向部洗淨步驟。 The substrate processing apparatus may further include a cleaning liquid blowing unit that blows the cleaning liquid toward the opposite portion of the main body from below. In this case, the cleaning control unit may control the cleaning liquid blowing unit to perform the cleaning step and the cleaning liquid discharging step, and further perform cleaning by blowing the cleaning liquid toward the opposing portion. The cleaning step of the opposite portion of the opposite portion.

根據此構成,可同步進行筒狀間隙之洗淨、與對向部洗淨步驟(本體之對向部之洗淨)。藉此,與分別以不同之時序進行筒狀間隙之洗淨、及本體之對向部之洗淨之情況比較,可以短時間進行本體之洗淨。 According to this configuration, the washing of the cylindrical gap and the washing step of the opposing portion (washing of the opposing portion of the main body) can be performed simultaneously. Thereby, the body can be washed in a short time as compared with the case where the cylindrical gap is washed at a different timing and the opposite portion of the body is washed.

此外,本發明提供一種間隙洗淨方法,係用以洗淨被區劃於本體之外周面與對向構件之內周面之間的筒狀間隙者,該本體具有與基板之上面中央部對向之對向部且上下延伸,該對向構件係圍繞於上述本體之外周且與上述基板之上面對向,該間隙洗淨方法,係執行以下之步驟:在上述本體之上述外周面開口,準備用以朝上述筒狀間隙吐出洗淨液之洗淨液吐出口之步驟;使上述對向構件及上述本體相對旋轉之旋轉步驟;及與上述旋轉步驟同步而自上述洗淨液吐出口吐出洗淨液之洗淨液吐出步驟。 Further, the present invention provides a gap cleaning method for cleaning a cylindrical gap between a peripheral surface of the body and an inner peripheral surface of the opposing member, the body having a central portion opposite to the upper surface of the substrate The opposing portion extends up and down, and the opposing member surrounds the outer circumference of the body and faces the substrate. The gap cleaning method performs the following steps: opening the outer peripheral surface of the body, a step of preparing a cleaning liquid discharge port for discharging the cleaning liquid toward the cylindrical gap; a rotating step of relatively rotating the opposite member and the main body; and discharging the cleaning liquid discharge port in synchronization with the rotating step The cleaning solution of the washing liquid is discharged.

根據此方法,一面使對向構件及本體相對旋轉,一面自形成於本體之外周面之洗淨液吐出口朝對向構件之內周面吐出洗淨液。由於對向構件之內周面相對於本體之外周面而旋轉,因此 自洗淨液吐出口吐出之洗淨液,被內周面之旋轉牽引,一面旋迴一面流向下方。亦即,於圓筒狀間隙形成有朝向下方之旋流。因此,於流動於圓筒狀間隙之洗淨液上作用有離心力及重力,藉由此等之物理上之力,可除去附著於內周面及/或外周面之汙染物質。藉此,可良好地洗淨圓筒狀間隙。 According to this method, the cleaning liquid is discharged from the washing liquid discharge port formed on the outer peripheral surface of the main body toward the inner peripheral surface of the opposing member while the opposing member and the main body are relatively rotated. Since the inner circumferential surface of the opposing member rotates relative to the outer circumferential surface of the body, The washing liquid spouted from the washing liquid outlet is pulled by the inner peripheral surface and flows downward while rotating. That is, a swirling flow directed downward is formed in the cylindrical gap. Therefore, centrifugal force and gravity act on the washing liquid flowing through the cylindrical gap, and by this physical force, the contaminant adhering to the inner peripheral surface and/or the outer peripheral surface can be removed. Thereby, the cylindrical gap can be favorably washed.

上述方法也可進而包含氣體供給步驟,其自相較於從該筒狀間隙中之上述洗淨液吐出口吐出洗淨液之位置靠上方的部位,對上述筒狀間隙供給氣體。 The above method may further include a gas supply step of supplying gas to the cylindrical gap from a portion above the position at which the cleaning liquid is discharged from the cleaning liquid discharge port in the cylindrical gap.

根據此方法,自較在筒狀間隙中供給有來自洗淨液吐出口之洗淨液之供給位置靠上方的部位供給氣體,因此可抑制供給於筒狀間隙之洗淨液之上昇。藉此,可更進一步良好地形成朝向下方之旋流。 According to this method, since the gas is supplied from a portion above the supply position at which the cleaning liquid from the cleaning liquid discharge port is supplied in the cylindrical gap, the increase in the cleaning liquid supplied to the cylindrical gap can be suppressed. Thereby, the swirling flow toward the lower side can be formed more favorably.

上述方法也可進而包含對向部洗淨步驟,其與上述旋轉步驟及上述洗淨液吐出步驟同步,朝上述對向部吹吐洗淨液而洗淨該對向部。 The above method may further include a step of cleaning the opposing portion, which, in synchronization with the rotating step and the washing liquid discharging step, blows the washing liquid toward the opposing portion to wash the opposing portion.

根據此方法,可同步進行筒狀間隙之洗淨、與對向部洗淨步驟(本體之對向部之洗淨)。藉此,與分別以不同之時序進行筒狀間隙之洗淨、及本體之對向部之洗淨之情況比較,可以短時間進行本體之洗淨。 According to this method, the washing of the cylindrical gap and the washing step of the opposing portion (washing of the opposing portion of the main body) can be performed simultaneously. Thereby, the body can be washed in a short time as compared with the case where the cylindrical gap is washed at a different timing and the opposite portion of the body is washed.

本發明之上述或其他之目的、特徵及功效,藉由參照所附圖式及以下陳述之實施形態之說明,自可明瞭。 The above and other objects, features, and advantages of the present invention will be apparent from the description and appended claims

1‧‧‧基板處理裝置 1‧‧‧Substrate processing unit

2‧‧‧處理單元 2‧‧‧Processing unit

3‧‧‧控制裝置 3‧‧‧Control device

4‧‧‧艙體 4‧‧‧ cabin

5‧‧‧旋轉夾頭 5‧‧‧Rotary chuck

6‧‧‧藥液供給單元 6‧‧‧Drug supply unit

7‧‧‧對向構件 7‧‧‧ opposite components

8‧‧‧噴嘴 8‧‧‧ nozzle

8a‧‧‧下端部 8a‧‧‧Bottom

9‧‧‧夾持構件 9‧‧‧Clamping members

10‧‧‧洗淨液供給單元 10‧‧‧cleaning liquid supply unit

11‧‧‧下面單元 11‧‧‧Under unit

12‧‧‧杯體 12‧‧‧ cup body

12a‧‧‧上端部 12a‧‧‧Upper

13‧‧‧間隔壁 13‧‧‧ partition wall

14‧‧‧FFU(風扇過濾器單元) 14‧‧‧FFU (Fan Filter Unit)

15‧‧‧排氣管 15‧‧‧Exhaust pipe

16‧‧‧旋轉馬達 16‧‧‧Rotary motor

17‧‧‧旋轉軸 17‧‧‧Rotary axis

18‧‧‧旋轉台 18‧‧‧Rotating table

19‧‧‧藥液噴嘴 19‧‧‧Drug nozzle

20‧‧‧藥液配管 20‧‧‧Pharmaceutical piping

21‧‧‧藥液閥 21‧‧‧Drug valve

22‧‧‧噴嘴移動單元 22‧‧‧Nozzle mobile unit

23‧‧‧遮斷板 23‧‧‧ 断板

23a‧‧‧基板對向面 23a‧‧‧Substrate opposite

24‧‧‧旋轉軸 24‧‧‧Rotary axis

24a‧‧‧內周面 24a‧‧‧ inner circumference

25‧‧‧貫通孔 25‧‧‧through holes

25a‧‧‧內周面 25a‧‧‧ inner circumference

25b‧‧‧錐形面 25b‧‧‧Conical surface

26‧‧‧支撐臂 26‧‧‧Support arm

27‧‧‧遮斷板旋轉單元 27‧‧‧Shutter Rotating Unit

28‧‧‧對向構件昇降單元 28‧‧‧ opposite component lifting unit

29‧‧‧筒狀間隙 29‧‧‧Cylinder gap

29a‧‧‧連接位置 29a‧‧‧ Connection location

29b‧‧‧連接位置 29b‧‧‧ Connection location

30‧‧‧周圍氣體吐出口 30‧‧‧ surrounding gas discharge

31‧‧‧本體 31‧‧‧Ontology

31a‧‧‧外周面 31a‧‧‧Outer surface

31b‧‧‧對向面 31b‧‧‧ opposite

32‧‧‧洗淨液吐出口 32‧‧‧Clean liquid discharge

33‧‧‧處理液配管 33‧‧‧Processing liquid piping

34‧‧‧中央氣體配管 34‧‧‧Central gas piping

35‧‧‧處理液吐出口 35‧‧‧Processing fluid discharge

36‧‧‧中央氣體吐出口 36‧‧‧Central gas discharge

37‧‧‧沖洗液閥 37‧‧‧ rinse valve

38‧‧‧沖洗液供給配管 38‧‧‧ flushing fluid supply piping

39‧‧‧中央氣體閥 39‧‧‧Central gas valve

40‧‧‧中央氣體供給配管 40‧‧‧Central gas supply piping

41‧‧‧周圍氣體配管 41‧‧‧ surrounding gas piping

42‧‧‧周圍氣體閥 42‧‧‧ surrounding gas valve

43‧‧‧第1流量調整閥 43‧‧‧1st flow adjustment valve

44‧‧‧洗淨液配管 44‧‧‧cleaning liquid piping

45‧‧‧上下方向配管 45‧‧‧Up and down piping

45a‧‧‧下端 45a‧‧‧Bottom

46‧‧‧連接配管 46‧‧‧Connecting piping

46a‧‧‧下游端 46a‧‧‧ downstream end

47‧‧‧洗淨液上閥 47‧‧‧Clean liquid upper valve

48‧‧‧洗淨液供給配管 48‧‧‧Clean liquid supply piping

48a‧‧‧分歧位置 48a‧‧ ‧Different positions

50‧‧‧吸引配管 50‧‧‧Attraction piping

51‧‧‧吸引閥 51‧‧‧Attraction valve

52‧‧‧下面噴嘴 52‧‧‧ below nozzle

53‧‧‧洗淨液下配管 53‧‧‧Under the cleaning liquid piping

54‧‧‧洗淨液下閥 54‧‧‧Clean liquid lower valve

55‧‧‧第2流量調整閥 55‧‧‧2nd flow adjustment valve

56‧‧‧驅動零件收容空間 56‧‧‧Drive parts containment space

57‧‧‧連通道 57‧‧‧Connected channel

58‧‧‧氣封 58‧‧‧ gas seal

70‧‧‧液膜 70‧‧‧ liquid film

80‧‧‧液膜 80‧‧‧ liquid film

202‧‧‧處理單元 202‧‧‧Processing unit

205‧‧‧旋轉夾頭 205‧‧‧Rotary chuck

207‧‧‧對向構件 207‧‧‧ opposite components

218‧‧‧旋轉台 218‧‧‧Rotating table

223‧‧‧遮斷板 223‧‧‧ 断板

223a‧‧‧基板對向面 223a‧‧‧substrate facing

223b‧‧‧鍔部 223b‧‧‧锷

223c‧‧‧旋轉夾頭抵接部 223c‧‧‧Rotating chuck abutment

225‧‧‧貫通孔 225‧‧‧through holes

225a‧‧‧內周面 225a‧‧‧ inner circumference

226‧‧‧支撐臂 226‧‧‧Support arm

229‧‧‧凸緣支撐部 229‧‧‧Flange support

230‧‧‧圓筒部 230‧‧‧Cylinder

231‧‧‧對向構件支撐部 231‧‧‧ opposite member support

232‧‧‧卡合部 232‧‧‧With the Ministry

233‧‧‧支撐部 233‧‧‧Support

234‧‧‧凸緣部 234‧‧‧Flange

235‧‧‧第1凹凸部 235‧‧‧1st concave and convex part

236‧‧‧支撐部本體 236‧‧‧Support body

237‧‧‧連接部 237‧‧‧Connecting Department

238‧‧‧第2凹凸部 238‧‧‧2nd concave and convex part

240‧‧‧迷宮 240‧‧‧ Maze

241‧‧‧臂支撐軸 241‧‧‧arm support shaft

242‧‧‧臂擺動單元 242‧‧‧arm swing unit

243‧‧‧突起 243‧‧‧ Protrusion

244‧‧‧孔 244‧‧‧ hole

245‧‧‧臂昇降單元 245‧‧‧arm lifting unit

250‧‧‧氣體供給道 250‧‧‧ gas supply road

251‧‧‧第1流道 251‧‧‧1st runner

252‧‧‧第1分歧管 252‧‧‧1st manifold

253‧‧‧第2流道 253‧‧‧2nd runner

254‧‧‧第2分歧管 254‧‧‧2nd manifold

255‧‧‧氣體噴射口 255‧‧‧ gas jet

A0、A1‧‧‧旋轉軸線 A0, A1‧‧‧ rotation axis

A2‧‧‧擺動軸線 A2‧‧‧ Swing axis

A3‧‧‧中心軸線 A3‧‧‧ central axis

C‧‧‧晶圓承載盒 C‧‧‧ wafer carrier

CR‧‧‧基板搬送機器人 CR‧‧‧Substrate transfer robot

H‧‧‧機械手 H‧‧‧Robot

IR‧‧‧搬送機器人 IR‧‧‧Transfer robot

LP‧‧‧載入埠 LP‧‧‧Loading

R‧‧‧旋流 R‧‧‧ swirl

W‧‧‧基板 W‧‧‧Substrate

W1~W3‧‧‧間隔 W1~W3‧‧‧ interval

圖1為用以說明本發明之一實施形態之基板處理裝置之內部佈 局之圖解性俯視圖。 1 is a view showing the internal cloth of a substrate processing apparatus according to an embodiment of the present invention; Graphical top view of the bureau.

圖2為用以說明上述基板處理裝置所具備之處理單元之構成例之圖解性剖視圖。 FIG. 2 is a schematic cross-sectional view for explaining a configuration example of a processing unit included in the substrate processing apparatus.

圖3為上述處理單元所具備之對向構件之縱剖視圖。 Fig. 3 is a vertical cross-sectional view of the opposing member provided in the processing unit.

圖4為上述對向構件之仰視圖。 Figure 4 is a bottom plan view of the opposing member.

圖5為用以說明自洗淨液吐出口吐出之洗淨液之液流之橫剖視圖。 Fig. 5 is a transverse cross-sectional view for explaining a flow of a washing liquid discharged from a washing liquid discharge port.

圖6為用以說明自洗淨液吐出口吐出之洗淨液之液流之縱剖視圖。 Fig. 6 is a vertical cross-sectional view showing the flow of the washing liquid discharged from the washing liquid discharge port.

圖7為用以說明上述基板處理裝置之主要部分之電性構成之方塊圖。 Fig. 7 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus.

圖8為用以說明上述基板處理裝置之基板處理例之流程圖。 8 is a flow chart for explaining an example of substrate processing of the substrate processing apparatus.

圖9為用以說明圖8所示之藥液步驟之圖解性剖視圖。 Figure 9 is a schematic cross-sectional view for explaining the steps of the liquid medicine shown in Figure 8.

圖10為用以說明圖8所示之沖洗步驟之圖解性剖視圖。 Figure 10 is a schematic cross-sectional view for explaining the rinsing step shown in Figure 8.

圖11為用以說明圖8所示之旋轉乾燥步驟之圖解性剖視圖。 Figure 11 is a schematic cross-sectional view for explaining the spin drying step shown in Figure 8.

圖12為用以說明圖8所示之噴嘴洗淨步驟之流程圖。 Figure 12 is a flow chart for explaining the nozzle cleaning step shown in Figure 8.

圖13為用以說明上述噴嘴洗淨步驟之圖解性剖視圖。 Figure 13 is a schematic cross-sectional view for explaining the above nozzle cleaning step.

圖14為用以說明本發明之其他實施形態之處理單元之構成例之圖解性剖視圖。 Fig. 14 is a schematic cross-sectional view showing a configuration example of a processing unit according to another embodiment of the present invention.

圖15為放大顯示上述處理單元所包含之對向構件之剖視圖。 Fig. 15 is a cross-sectional view showing, in an enlarged manner, an opposing member included in the processing unit.

圖1為用以說明用來執行本發明之第一實施形態之基板處理方法之基板處理裝置1之內部佈局之圖解性俯視圖。基板處理裝置1係對矽晶圓等基板W各一片地進行處理之單片處理式 之裝置。於本實施形態中,基板W係圓板狀之基板。基板處理裝置1包含:複數之處理單元2,其以處理液處理基板W;載入埠LP,其供載置收容由處理單元2處理之複數片基板W之晶圓承載盒C;搬送機器人IR及CR,其於載入埠LP與處理單元2之間搬送基板W;及控制裝置(洗淨控制單元)3,其控制基板處理裝置1。搬送機器人IR,係於晶圓承載盒C與基板搬送機器人CR之間搬送基板W。基板搬送機器人CR,係於搬送機器人IR與處理單元2之間搬送基板W。複數之處理單元2,例如具有相同之構成。 1 is a schematic plan view for explaining an internal layout of a substrate processing apparatus 1 for performing a substrate processing method according to a first embodiment of the present invention. The substrate processing apparatus 1 is a one-piece processing method for processing each of the substrates W such as a silicon wafer. Device. In the present embodiment, the substrate W is a disk-shaped substrate. The substrate processing apparatus 1 includes a plurality of processing units 2 that process the substrate W with a processing liquid, and a loading cassette LP for mounting a wafer carrier cassette C that accommodates a plurality of substrates W processed by the processing unit 2; And CR, which transfers the substrate W between the loading cassette LP and the processing unit 2, and a control device (washing control unit) 3 that controls the substrate processing apparatus 1. The transport robot IR transports the substrate W between the wafer cassette C and the substrate transfer robot CR. The substrate transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have, for example, the same configuration.

圖2為用以說明處理單元2之構成例之圖解性剖視圖。 FIG. 2 is a schematic cross-sectional view for explaining a configuration example of the processing unit 2.

處理單元2包含:箱形之艙體4;旋轉夾頭(基板保持單元)5,其於艙體4內以水平姿勢保持一片基板W,且使基板W繞通過基板W之中心之鉛垂之旋轉軸線A1旋轉;藥液供給單元6,其用以朝保持於旋轉夾頭5之基板W之上面供給藥液;對向構件7,其與保持在旋轉夾頭5之基板W之上面對向;噴嘴8,其具有與保持在旋轉夾頭5之基板W之上面中央部對向之處理流體吐出口(處理液吐出口35及中央氣體吐出口36),且上下插通於對向構件7之中央部;洗淨液供給單元10,其用以自噴嘴8之內部朝形成於噴嘴8之洗淨液吐出口(傾斜吐出口)32供給洗淨液;下面單元(洗淨液吹吐單元)11,其於基板W未被保持在旋轉夾頭5之狀態下,用以自下側朝噴嘴8之處理流體吐出口(處理液吐出口35及中央氣體吐出口36)吹吐洗淨液;及筒狀之杯體12,其圍繞於旋轉夾頭5。 The processing unit 2 includes: a box-shaped pod 4; a rotating chuck (substrate holding unit) 5 that holds a substrate W in a horizontal posture in the pod 4 and causes the substrate W to be wound around the center of the substrate W. The rotation axis A1 is rotated; the chemical supply unit 6 is for supplying the liquid medicine to the substrate W held on the rotary chuck 5; the opposite member 7 is opposed to the substrate W held by the rotary chuck 5 The nozzle 8 has a processing fluid discharge port (a processing liquid discharge port 35 and a center gas discharge port 36) opposed to a central portion of the upper surface of the substrate W held by the rotary chuck 5, and is vertically inserted into the opposite member. a central portion of the cleaning liquid supply unit 10 for supplying the cleaning liquid from the inside of the nozzle 8 toward the washing liquid discharge port (inclined discharge port) 32 formed in the nozzle 8; the lower unit (washing liquid blowing) The unit 11 is configured to blow the treatment fluid discharge port (the treatment liquid discharge port 35 and the central gas discharge port 36) from the lower side toward the nozzle 8 while the substrate W is not held by the rotary chuck 5. a liquid; and a cylindrical cup 12 surrounding the rotating collet 5.

艙體4包含:箱狀之間隔壁13,其收容旋轉夾頭5及噴嘴;FFU(風扇過濾器單元)14,其作為送風單元而自間隔壁13 之上部朝間隔壁13內輸送清潔空氣(藉由過濾器過濾後之空氣);及排氣管15,其將艙體4內之氣體自間隔壁13之下部排出。FFU14係配置於間隔壁13之上方,且被安裝於間隔壁13之頂壁。FFU14係自間隔壁13之頂壁向下朝艙體4內輸送清潔空氣。排氣管15連接於杯體12之底部,且將艙體4內之氣體朝設置於設置有基板處理裝置1之工廠之排氣處理設備導出。因此,藉由FFU14及排氣管15,形成有朝下方流動於艙體4內之降流(下降氣流)。基板W之處理,係於艙體4內形成有降流之狀態下而進行。 The cabin 4 includes a box-shaped partition wall 13 that houses the rotary chuck 5 and the nozzle, and an FFU (Fan Filter Unit) 14 that serves as a blower unit from the partition wall 13 The upper portion conveys clean air (air filtered by the filter) into the partition wall 13; and an exhaust pipe 15 that discharges the gas in the cabin 4 from the lower portion of the partition wall 13. The FFU 14 is disposed above the partition wall 13 and is mounted on the top wall of the partition wall 13. The FFU 14 delivers clean air from the top wall of the partition wall 13 downwardly into the cabin 4. The exhaust pipe 15 is connected to the bottom of the cup body 12, and the gas in the cabin 4 is led out to an exhaust gas treatment device provided in a factory in which the substrate processing apparatus 1 is installed. Therefore, the FFU 14 and the exhaust pipe 15 are formed with a downflow (downflow) that flows downward in the cabin 4. The processing of the substrate W is performed in a state in which a downflow is formed in the chamber 4.

作為旋轉夾頭5,係採用於水平方向夾持基板W而水平保持基板W之夾持式之夾頭。具體而言,旋轉夾頭5包含:旋轉馬達16;旋轉軸17,其係與此旋轉馬達16之驅動軸設為一體;及圓板狀之旋轉台18,其大致水平地安裝於旋轉軸17之上端。 As the rotary chuck 5, a chuck in which a substrate W is sandwiched in a horizontal direction and a substrate W is horizontally held is used. Specifically, the rotary chuck 5 includes a rotary motor 16 , a rotary shaft 17 that is integral with the drive shaft of the rotary motor 16 , and a disk-shaped rotary table 18 that is mounted substantially horizontally on the rotary shaft 17 . Upper end.

於旋轉台18之上面且其周緣部配置有複數個(3個以上。例如6個)之夾持構件9。複數個夾持構件9,係於旋轉台18之上面周緣部,且在與基板W之外周形狀對應之圓周上隔開適當之間隔而配置。 A plurality of (three or more, for example, six) holding members 9 are disposed on the upper surface of the turntable 18 and on the peripheral portion thereof. The plurality of holding members 9 are attached to the upper peripheral portion of the turntable 18, and are disposed at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W.

作為旋轉夾頭5,不限於夾持式者,例如,也可採用藉由真空吸附基板W之背面,以水平之姿勢保持基板W,並且於此狀態下繞鉛垂之旋轉軸旋轉,藉以使被保持於旋轉夾頭5之基板W旋轉之真空吸附式者(真空吸盤)。 The rotary chuck 5 is not limited to the clamp type. For example, it is also possible to hold the substrate W in a horizontal posture by vacuum-adsorbing the back surface of the substrate W, and in this state, rotate about a vertical rotation axis, thereby making it possible to rotate the substrate W in a horizontal position. The vacuum suction type (vacuum suction cup) held by the substrate W held by the rotary chuck 5 is rotated.

藥液供給單元6包含:藥液噴嘴19;藥液配管20,其連接於藥液噴嘴19;藥液閥21,其介設於藥液配管20;及噴嘴移動單元22,其使藥液噴嘴19移動。藥液噴嘴19例如為以連續流之狀態吐出液體之直管式噴嘴。來自藥液供給源之藥液被供給至藥 液配管20。於本實施形態中,朝藥液配管20供給有高溫(例如,約170℃~約180℃)之硫酸/過氧化氫混合液(sulfuric acid/hydrogen peroxide mixture:SPM)作為藥液。藉由硫酸與過氧化氫之反應熱,昇溫至上述高溫之SPM,被供給於藥液配管20。 The chemical solution supply unit 6 includes a chemical liquid nozzle 19, a chemical liquid pipe 20 connected to the chemical liquid nozzle 19, a chemical liquid valve 21 interposed to the chemical liquid pipe 20, and a nozzle moving unit 22 for making the chemical liquid nozzle 19 moves. The chemical liquid nozzle 19 is, for example, a straight tube nozzle that discharges liquid in a state of continuous flow. The liquid medicine from the supply of the liquid medicine is supplied to the medicine Liquid piping 20. In the present embodiment, a sulfuric acid/hydrogen peroxide mixture (SPM) having a high temperature (for example, about 170 ° C to about 180 ° C) is supplied to the chemical liquid pipe 20 as a chemical liquid. The heat of reaction with sulfuric acid and hydrogen peroxide is raised to the above-mentioned high temperature SPM, and is supplied to the chemical liquid pipe 20.

若開啟藥液閥21,則自藥液配管20供給於藥液噴嘴19之高溫之SPM,自藥液噴嘴19朝下方吐出。此外,若關閉藥液閥21,則停止來自藥液噴嘴19之高溫之SPM之吐出。噴嘴移動單元22,係使藥液噴嘴19,在自藥液噴嘴19吐出之高溫之SPM被供給於基板W之上面的處理位置、與俯視時藥液噴嘴19退避至旋轉夾頭5之一側之退避位置之間移動。 When the chemical liquid valve 21 is opened, the high-temperature SPM supplied from the chemical liquid pipe 20 to the chemical liquid nozzle 19 is discharged downward from the chemical liquid nozzle 19. Further, when the chemical liquid valve 21 is closed, the discharge of the high temperature SPM from the chemical liquid nozzle 19 is stopped. The nozzle moving unit 22 is configured such that the high-temperature SPM discharged from the chemical liquid nozzle 19 is supplied to the upper surface of the substrate W, and the chemical liquid nozzle 19 is retracted to one side of the rotary chuck 5 in a plan view. Move between the retracted positions.

圖3為對向構件7之縱剖視圖。圖4為對向構件7之仰視圖。參照圖2~圖4,說明對向構件7。 3 is a longitudinal sectional view of the opposing member 7. 4 is a bottom view of the opposing member 7. The opposing member 7 will be described with reference to Figs. 2 to 4 .

對向構件7包含遮斷板23、及可一體旋轉地設置於遮斷板23之旋轉軸24。遮斷板23係具有與基板W大致相同直徑或其以上之直徑之圓板狀。遮斷板23係具有在其下面與基板W之上面全域對向之圓形之基板對向面23a。於基板對向面23a之中央部形成有上下貫通遮斷板23之圓筒狀之貫通孔25。貫通孔25係藉由圓筒狀之內周面25a所區劃。於內周面25a之下端部形成有隨著朝下方而朝外側展開之錐形面25b。 The opposing member 7 includes a blocking plate 23 and a rotating shaft 24 that is rotatably provided integrally with the blocking plate 23. The blocking plate 23 has a disk shape having a diameter substantially equal to or larger than the substrate W. The shutter 23 has a substrate opposing surface 23a that is circularly opposed to the entire upper surface of the substrate W. A cylindrical through hole 25 penetrating the shutter 23 up and down is formed in a central portion of the opposing surface 23a of the substrate. The through hole 25 is partitioned by a cylindrical inner peripheral surface 25a. A tapered surface 25b that expands outward as it goes downward is formed at an end portion of the inner peripheral surface 25a.

旋轉軸24係被設置為可繞通過遮斷板23之中心而鉛垂地延伸之旋轉軸線A0(與基板W之旋轉軸線A1一致之軸線)旋轉。旋轉軸24係圓筒狀。旋轉軸24之內周面24a,係被形成為以旋轉軸線A0為中心之圓筒面。旋轉軸24之內部空間,係與遮斷板23之貫通孔25連通。旋轉軸24之內周面24a與內周面25a,係形 成於相同之圓周面。旋轉軸24係可相對旋轉地被支撐於支撐臂26,該支撐臂26係在遮斷板23之上方水平地延伸。 The rotary shaft 24 is provided to be rotatable about a rotation axis A0 (an axis coincident with the rotation axis A1 of the substrate W) which is vertically extended through the center of the shutter 23. The rotating shaft 24 is cylindrical. The inner circumferential surface 24a of the rotary shaft 24 is formed as a cylindrical surface centered on the rotation axis A0. The internal space of the rotating shaft 24 communicates with the through hole 25 of the blocking plate 23. The inner circumferential surface 24a and the inner circumferential surface 25a of the rotating shaft 24 are shaped In the same circumferential surface. The rotating shaft 24 is rotatably supported by a support arm 26 that extends horizontally above the blocking plate 23.

於遮斷板23結合有包含電動馬達等之構成之遮斷板旋轉單元(旋轉單元)27。遮斷板旋轉單元27,係使遮斷板23及旋轉軸24相對於支撐臂26而繞旋轉軸線A0旋轉。構成遮斷板旋轉單元27之各種之驅動零件,係被收容於設置在旋轉軸17之內部及/或支撐臂26之內部之驅動零件收容空間56。 A blocking plate rotating unit (rotating unit) 27 including an electric motor or the like is coupled to the blocking plate 23. The blocking plate rotating unit 27 rotates the blocking plate 23 and the rotating shaft 24 with respect to the support arm 26 about the rotation axis A0. The various driving components constituting the blocking plate rotating unit 27 are housed in a driving component housing space 56 provided inside the rotating shaft 17 and/or inside the support arm 26.

於支撐臂26結合有包含電動馬達、滾珠螺桿等之構成之對向構件昇降單元28。對向構件昇降單元28,係使對向構件7(遮斷板23及旋轉軸24)及噴嘴8與支撐臂26一同沿鉛垂方向昇降。 An opposing member lifting unit 28 including an electric motor, a ball screw, and the like is coupled to the support arm 26. The opposing member lifting unit 28 moves the opposing member 7 (the blocking plate 23 and the rotating shaft 24) and the nozzle 8 together with the supporting arm 26 in the vertical direction.

對向構件昇降單元28,係使對向構件7及噴嘴8,在遮斷板23之基板對向面23a接近於被保持在旋轉夾頭5之基板W之上面之接近位置(參照圖11)、與設置於接近位置之上方之退避位置(參照圖9)之間進行昇降。對向構件昇降單元28,例如可於4個位置(接近位置、下側中間位置(亦即,噴嘴洗淨位置。參照圖13)、上側中間位置(亦即,沖洗位置。參照圖10)、及退避位置),保持遮斷板23。下側中間位置係接近位置與退避位置之間之預定位置。上側中間位置係下側中間位置與退避位置之間之預定位置。 In the opposing member lifting and lowering unit 28, the opposing member 7 and the nozzle 8 are brought close to the substrate facing surface 23a of the blocking plate 23 at a position close to the upper surface of the substrate W held by the rotary chuck 5 (refer to FIG. 11). The vehicle is raised and lowered between the retracted position (see FIG. 9) disposed above the approaching position. The opposing member lifting unit 28 can be, for example, at four positions (a close position, a lower intermediate position (that is, a nozzle cleaning position. See FIG. 13), an upper intermediate position (that is, a flushing position. See FIG. 10), And the retracted position), the shutter 23 is held. The lower intermediate position is a predetermined position between the approach position and the retracted position. The upper intermediate position is a predetermined position between the lower intermediate position and the retracted position.

噴嘴8係沿通過遮斷板23及基板W之中心之鉛垂之軸線即旋轉軸線A1而朝上下方向延伸。於本實施形態中,噴嘴8係擔負作為中心軸噴嘴之功能。噴嘴8係配置於旋轉夾頭5之上方。噴嘴8係藉由支撐臂26所支撐。噴嘴8不能相對於支撐臂26進行旋轉。噴嘴8係與遮斷板23、旋轉軸24及支撐臂26一同昇降。 噴嘴8係插通於旋轉軸24之內部空間。噴嘴8之下面,係配置在與遮斷板23之基板對向面23a大致相同之高度或較基板對向面23a靠上方。噴嘴8係由形成於噴嘴8之周圍之圓筒狀之筒狀間隙29所包圍。筒狀間隙29之間隙尺寸例如約為3mm,且擔負作為供惰性氣體流通之流道之功能。筒狀間隙29之下端,係呈圍繞噴嘴8之環狀進行開口,而形成周圍氣體吐出口30。 The nozzle 8 extends in the vertical direction along the axis of rotation A1 which is the vertical axis passing through the center of the shutter 23 and the substrate W. In the present embodiment, the nozzle 8 functions as a central axis nozzle. The nozzle 8 is disposed above the rotary chuck 5. The nozzle 8 is supported by a support arm 26. The nozzle 8 cannot rotate relative to the support arm 26. The nozzle 8 is lifted and lowered together with the shutter 23, the rotating shaft 24, and the support arm 26. The nozzle 8 is inserted into the internal space of the rotating shaft 24. The lower surface of the nozzle 8 is disposed at substantially the same height as the substrate facing surface 23a of the blocking plate 23 or above the substrate facing surface 23a. The nozzle 8 is surrounded by a cylindrical tubular gap 29 formed around the nozzle 8. The gap size of the cylindrical gap 29 is, for example, about 3 mm, and functions as a flow path through which an inert gas flows. The lower end of the cylindrical gap 29 is opened in a ring shape around the nozzle 8, and a peripheral gas discharge port 30 is formed.

噴嘴8包含上下方向延伸之圓柱狀之本體31。本體31具有圓筒狀之外周面31a、及設置於本體31之下端部且與基板W之上面中央部對向之對向面(對向部)31b。於本體31之外周面31a,且於本體31之上下方向之途中部(與本體31之下端相距間隔W1(例如約50mm))所預先設定之圓周方向位置形成有洗淨液吐出口32。洗淨液吐出口32在俯視時自內側朝外側吐出洗淨液。如圖3所示,洗淨液吐出口32之形成位置,係較筒狀間隙29之連通道57之連接位置29a位於下方。 The nozzle 8 includes a cylindrical body 31 extending in the up and down direction. The main body 31 has a cylindrical outer peripheral surface 31a and a facing surface (opposing portion) 31b which is provided at the lower end portion of the main body 31 and faces the upper central portion of the substrate W. The cleaning liquid discharge port 32 is formed in the circumferential direction 31a of the main body 31 and in the middle direction of the upper direction of the main body 31 (the distance W1 (for example, about 50 mm) from the lower end of the main body 31). The cleaning liquid discharge port 32 discharges the washing liquid from the inside toward the outside in a plan view. As shown in Fig. 3, the position at which the cleaning liquid discharge port 32 is formed is located below the connection position 29a of the connecting passage 57 of the cylindrical gap 29.

於本體31之內部插通有處理液配管(處理流體配管)33及氣體配管(處理流體配管)34。處理液配管33及中央氣體配管34,係於上下方向延伸。設置於處理液配管33之下游端之開口,係形成處理液吐出口(處理流體吐出口)35。設置於中央氣體配管34之下游端之開口,係形成中央氣體吐出口(處理流體吐出口)36。處理液吐出口35及中央氣體吐出口36,係配置在與本體31之下端面相同之高度。亦即,處理液配管33及中央氣體配管34之下端,係於本體31之對向面31b開口,且分別形成處理液吐出口35及中央氣體吐出口36。 A treatment liquid pipe (treatment fluid pipe) 33 and a gas pipe (treatment fluid pipe) 34 are inserted into the body 31. The treatment liquid pipe 33 and the central gas pipe 34 extend in the vertical direction. The opening provided at the downstream end of the treatment liquid pipe 33 forms a treatment liquid discharge port (process fluid discharge port) 35. The opening provided at the downstream end of the central gas pipe 34 forms a central gas discharge port (process fluid discharge port) 36. The treatment liquid discharge port 35 and the central gas discharge port 36 are disposed at the same height as the lower end surface of the main body 31. In other words, the processing liquid piping 33 and the lower end of the central gas piping 34 are opened to the opposing surface 31b of the main body 31, and the processing liquid discharge port 35 and the central gas discharge port 36 are formed, respectively.

處理液配管33,係連接於介設有沖洗液閥37之沖洗 液供給配管38。若開啟沖洗液閥37,則沖洗液(處理流體)自處理液吐出口35朝下方吐出。供給於處理液配管33之沖洗液,例如為去離子水(DIW),但不限於DIW,也可為碳酸水、電解離子水、氫水、臭氧水及稀釋濃度(例如,10ppm~100ppm左右)之鹽酸水之任一者。 The treatment liquid pipe 33 is connected to the flushing which is provided with the flushing liquid valve 37 Liquid supply pipe 38. When the rinse liquid valve 37 is opened, the rinse liquid (treatment fluid) is discharged downward from the treatment liquid discharge port 35. The rinse liquid supplied to the treatment liquid pipe 33 is, for example, deionized water (DIW), but is not limited to DIW, and may be carbonated water, electrolytic ionized water, hydrogen water, ozone water, and diluted concentration (for example, about 10 ppm to 100 ppm). Any of the hydrochloric acid waters.

中央氣體配管34,係連接於介設有中央氣體閥39之中央氣體供給配管40。若開啟中央氣體閥39,則氣體(處理流體)自中央氣體吐出口36朝下方吐出。供給於中央氣體配管34之氣體及供給於筒狀間隙29之氣體之一例,為惰性氣體。惰性氣體例如為氮氣及清潔空氣之任一者。 The central gas pipe 34 is connected to the central gas supply pipe 40 through which the central gas valve 39 is placed. When the center gas valve 39 is opened, the gas (treatment fluid) is discharged downward from the center gas discharge port 36. An example of the gas supplied to the central gas pipe 34 and the gas supplied to the cylindrical gap 29 is an inert gas. The inert gas is, for example, any of nitrogen gas and clean air.

筒狀間隙29,係被區劃於本體31之外周面31a與對向構件7(遮斷板23及旋轉軸24)之內周面25a、24a之間的間隙。筒狀間隙29係圍繞於本體31之外周面31a。筒狀間隙29係於較洗淨液吐出口32靠上方之既定位置,被連接於周圍氣體配管41。於周圍氣體配管41介設有用以開閉周圍氣體配管41之周圍氣體閥42、及調節周圍氣體配管41之開度而用以調整供給於筒狀間隙29之氣體流量之第1流量調整閥43。雖未圖示,第1流量調整閥43,包含內部設置有閥座之閥本體、開閉閥座之閥體、使閥體在開位置與閉位置之間移動之致動器。其他之流量調整閥也相同。於本實施形態中,藉由周圍氣體配管41、周圍氣體閥42及第1流量調整閥43,構成氣體供給單元。 The cylindrical gap 29 is partitioned between the outer peripheral surface 31a of the main body 31 and the inner peripheral surfaces 25a and 24a of the opposing member 7 (the blocking plate 23 and the rotating shaft 24). The cylindrical gap 29 surrounds the outer peripheral surface 31a of the body 31. The cylindrical gap 29 is connected to the surrounding gas pipe 41 at a predetermined position above the cleaning liquid discharge port 32. The ambient gas pipe 41 is provided with a first gas flow valve 42 for opening and closing the surrounding gas pipe 41, and a first flow rate adjusting valve 43 for adjusting the opening degree of the surrounding gas pipe 41 to adjust the flow rate of the gas supplied to the cylindrical gap 29. Although not shown, the first flow rate adjustment valve 43 includes a valve body in which a valve seat is provided, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between the open position and the closed position. The other flow regulating valves are also the same. In the present embodiment, the gas supply unit is constituted by the surrounding gas pipe 41, the surrounding gas valve 42, and the first flow rate adjusting valve 43.

若開啟周圍氣體閥42,則氣體以與第1流量調整閥43之開度對應之流量,流經筒狀間隙29,且氣體自周圍氣體吐出口30朝下方吐出。供給於周圍氣體配管41之氣體、及供給於筒狀 間隙29之氣體之一例,為惰性氣體。惰性氣體例如為氮氣及清潔空氣之任一者。 When the ambient gas valve 42 is opened, the gas flows through the cylindrical gap 29 at a flow rate corresponding to the opening degree of the first flow rate adjusting valve 43, and the gas is discharged downward from the surrounding gas discharge port 30. The gas supplied to the surrounding gas pipe 41 and supplied to the cylinder An example of the gas of the gap 29 is an inert gas. The inert gas is, for example, any of nitrogen gas and clean air.

筒狀間隙29經由連通道57而與驅動零件收容空間56連通。於連通道57介設有迷宮(labyrinth)等之氣封58,以使驅動零件收容空間56之環境氣體不會經由連通道57流出至艙體4內(將驅動零件收容空間56之環境氣體與艙體4內之環境氣體遮斷)。 The cylindrical gap 29 communicates with the drive component accommodating space 56 via the connecting passage 57. A gas seal 58 such as a labyrinth or the like is interposed in the passage 57 such that the ambient gas that drives the component accommodating space 56 does not flow out into the cabin 4 via the connecting passage 57 (the ambient gas that drives the component accommodating space 56 and The ambient gas in the tank 4 is interrupted).

洗淨液供給單元10包含:洗淨液配管44,其插通於本體31之內部;洗淨液供給配管48,其連接於洗淨液配管44;洗淨液上閥47,其用以開閉洗淨液供給配管48;及第2流量調整閥55,其調節洗淨液供給配管48之開度,用以調整供給於洗淨液配管44之洗淨液之流量。洗淨液配管44包含呈直線狀於上下方向延伸之上下方向配管45、及連接上下方向配管45之下端45a與洗淨液吐出口32之連接配管46。洗淨液配管44不在本體31之下端面開口。連接配管46係直線狀之配管,且相對於鉛垂方向傾斜既定角度(例如約30°)。因此,洗淨液吐出口32朝相對於鉛垂方向傾斜約30°之斜下方吐出洗淨液。此外,連接配管46之下游端(洗淨液配管之下游端)46a,不會自本體31之外周面31a朝徑向外側突出。亦即,洗淨液吐出口32係與外周面31a設置於相同之面上。上下方向配管45及連接配管46,可為不同之構件,也可一體構成。 The cleaning liquid supply unit 10 includes a cleaning liquid pipe 44 that is inserted into the inside of the main body 31, a cleaning liquid supply pipe 48 that is connected to the cleaning liquid pipe 44, and a cleaning liquid upper valve 47 that opens and closes. The cleaning liquid supply pipe 48 and the second flow rate adjustment valve 55 adjust the opening degree of the cleaning liquid supply pipe 48 to adjust the flow rate of the cleaning liquid supplied to the cleaning liquid pipe 44. The cleaning liquid pipe 44 includes a pipe 45 that extends in the vertical direction in the vertical direction, and a connecting pipe 46 that connects the lower end 45a of the vertical pipe 45 and the cleaning liquid discharge port 32. The cleaning liquid pipe 44 is not opened at the lower end surface of the body 31. The connecting pipe 46 is a linear pipe and is inclined at a predetermined angle (for example, about 30°) with respect to the vertical direction. Therefore, the cleaning liquid discharge port 32 discharges the cleaning liquid obliquely downward at an inclination of about 30° with respect to the vertical direction. Further, the downstream end (the downstream end of the cleaning liquid pipe) 46a of the connection pipe 46 does not protrude radially outward from the outer peripheral surface 31a of the body 31. In other words, the cleaning liquid discharge port 32 is provided on the same surface as the outer peripheral surface 31a. The vertical pipe 45 and the connecting pipe 46 may be different members or may be integrally formed.

若開啟洗淨液上閥47,則洗淨液自洗淨液吐出口32朝斜下方吐出。供給於洗淨液配管44之洗淨液例如為水。水例如為去離子水(DIW),但不限於DIW,也可為碳酸水、電解離子水、氫水、臭氧水及稀釋濃度(例如,10ppm~100ppm左右)之鹽酸水之任一者。供給於下面噴嘴52之洗淨液也相同。 When the cleaning liquid upper valve 47 is opened, the cleaning liquid is discharged obliquely downward from the cleaning liquid discharge port 32. The cleaning liquid supplied to the cleaning liquid pipe 44 is, for example, water. The water is, for example, deionized water (DIW), but is not limited to DIW, and may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm). The cleaning liquid supplied to the lower nozzle 52 is also the same.

於洗淨液供給配管48且洗淨液配管44之基端與洗淨液上閥47之間的分歧位置48a,分歧連接有用以吸引洗淨液配管44之內部之洗淨液之吸引配管50之一端。於吸引配管50介設有用以開閉吸引配管50之吸引閥51。吸引配管50之另一端,係與吸引裝置(未圖示)連接。吸引裝置例如時常被設定為作動狀態,若開啟吸引閥51,則較洗淨液供給配管48之分歧位置48a靠下側的部分之內部被排氣,吸引該下游側之部分的內部之洗淨液。 In the cleaning liquid supply pipe 48 and the branching position 48a between the base end of the cleaning liquid pipe 44 and the cleaning liquid upper valve 47, the suction pipe 50 for sucking the cleaning liquid inside the cleaning liquid pipe 44 is branched and connected. One end. A suction valve 51 for opening and closing the suction pipe 50 is interposed in the suction pipe 50. The other end of the suction pipe 50 is connected to a suction device (not shown). When the suction valve 51 is opened, the suction device 51 is vented to the lower portion of the branching position 48a of the cleaning liquid supply pipe 48, and the inside of the downstream portion is sucked. liquid.

圖5為用以說明自洗淨液吐出口32吐出之洗淨液之液流之橫剖視圖。圖6為用以說明自洗淨液吐出口32吐出之洗淨液之液流之縱剖視圖。如圖5所示,洗淨液吐出口32,係沿噴嘴8之本體31之徑向,自內向外延伸。 Fig. 5 is a transverse cross-sectional view for explaining a flow of the washing liquid discharged from the washing liquid discharge port 32. Fig. 6 is a vertical cross-sectional view for explaining a flow of the washing liquid discharged from the washing liquid discharge port 32. As shown in Fig. 5, the cleaning liquid discharge port 32 extends from the inside to the outside in the radial direction of the body 31 of the nozzle 8.

於洗淨噴嘴8時,遮斷板旋轉單元27(參照圖2)使遮斷板23及旋轉軸24旋轉,並且開啟洗淨液上閥47(參照圖2)。藉此,如圖5及圖6所示,一面使對向構件7相對於噴嘴8之本體31進行旋轉,一面自形成於本體31之外周面31a之洗淨液吐出口32朝旋轉軸24之內周面24a吐出洗淨液。由於內周面24a相對於外周面31a而旋轉,因此自洗淨液吐出口32吐出之洗淨液,被內周面24a之旋轉牽引,一面旋迴一面流向下方。亦即,於筒狀間隙29形成有朝向下方之旋流R。 When the nozzle 8 is cleaned, the blocking plate rotating unit 27 (see FIG. 2) rotates the blocking plate 23 and the rotating shaft 24, and opens the cleaning liquid upper valve 47 (see FIG. 2). As a result, as shown in FIG. 5 and FIG. 6, the opposing member 7 is rotated with respect to the main body 31 of the nozzle 8, and the cleaning liquid discharge port 32 formed on the outer peripheral surface 31a of the main body 31 faces the rotating shaft 24. The inner peripheral surface 24a discharges the washing liquid. Since the inner peripheral surface 24a is rotated with respect to the outer peripheral surface 31a, the washing liquid discharged from the washing liquid discharge port 32 is pulled by the rotation of the inner peripheral surface 24a, and flows downward while rotating. That is, a swirling flow R directed downward is formed in the cylindrical gap 29.

此外,洗淨液吐出口32係朝斜下方吐出洗淨液。由於自洗淨液吐出口32朝斜下方吐出洗淨液,因此可抑制供給於筒狀間隙29之洗淨液之上昇。藉此,可於筒狀間隙29良好地形成朝向下方之旋流R。 Moreover, the washing liquid discharge port 32 discharges the washing liquid obliquely downward. Since the washing liquid is discharged obliquely downward from the washing liquid discharge port 32, the increase in the washing liquid supplied to the cylindrical gap 29 can be suppressed. Thereby, the swirling flow R directed downward can be formed favorably in the cylindrical gap 29.

下面單元11包含:下面噴嘴52,其朝上方吐出洗淨 液;洗淨液下配管53,其朝下面噴嘴52導引洗淨液;及洗淨液下閥54,其介設於洗淨液下配管53。若開啟洗淨液下閥54,則自洗淨液下配管53朝下面噴嘴52供給洗淨液。藉此,自下面噴嘴52朝上方吐出洗淨液。供給於下面噴嘴52之洗淨液,例如為水。 The lower unit 11 includes a lower nozzle 52 which is washed upwards and discharged. The liquid; the cleaning liquid lower pipe 53, which guides the cleaning liquid toward the lower nozzle 52; and the cleaning liquid lower valve 54, which is interposed in the cleaning liquid lower pipe 53. When the cleaning liquid lower valve 54 is opened, the cleaning liquid is supplied from the cleaning liquid lower pipe 53 toward the lower nozzle 52. Thereby, the washing liquid is discharged upward from the lower nozzle 52. The cleaning liquid supplied to the lower nozzle 52 is, for example, water.

如圖2所示,杯體12係配置於較保持在旋轉夾頭5之基板W靠外側(自旋轉軸線A1分離之方向)。杯體12係圍繞於旋轉台18。若於旋轉夾頭5使基板W旋轉之狀態下,朝基板W供給處理液(藥液或沖洗液),則供給於基板W之處理液被朝基板W之周圍甩脫。於將處理液供給於基板W時,向上開放之杯體12之上端部12a,係配置於較旋轉台18靠上方。因此,被排出於基板W之周圍之處理液,藉由杯體12所接取。並且,由杯體12接取之處理液,被輸送至未圖示之回收裝置或廢液裝置。 As shown in FIG. 2, the cup body 12 is disposed on the outer side of the substrate W held by the rotary chuck 5 (the direction separated from the rotation axis A1). The cup 12 is wrapped around the turntable 18. When the processing liquid (chemical liquid or rinsing liquid) is supplied to the substrate W in a state where the substrate W is rotated by the rotary chuck 5, the processing liquid supplied to the substrate W is detached from the periphery of the substrate W. When the processing liquid is supplied to the substrate W, the upper end portion 12a of the cup body 12 that is opened upward is disposed above the rotating table 18. Therefore, the treatment liquid discharged around the substrate W is taken up by the cup 12. Then, the treatment liquid picked up from the cup 12 is sent to a recovery device or a waste liquid device (not shown).

圖7為用以說明基板處理裝置1之主要部分之電性構成之方塊圖。 FIG. 7 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus 1.

控制裝置3例如使用微電腦構成。控制裝置3具有CPU等運算單元、固定記憶體元件、硬碟驅動器等之記憶單元、及輸入輸出單元。記憶單元記憶有運算單元所執行之程式。 The control device 3 is configured using, for example, a microcomputer. The control device 3 includes an arithmetic unit such as a CPU, a memory unit such as a fixed memory element and a hard disk drive, and an input/output unit. The memory unit stores the program executed by the arithmetic unit.

控制裝置3係根據預定之程式對旋轉馬達16、噴嘴移動單元22、遮斷板旋轉單元27、對向構件昇降單元28等之動作進行控制。並且,控制裝置3係控制藥液閥21、沖洗液閥37、中央氣體閥39、周圍氣體閥42、第1流量調整閥43、洗淨液上閥47、吸引閥51、洗淨液下閥54、第2流量調整閥55等之開閉動作等。 The control device 3 controls the operations of the rotary motor 16, the nozzle moving unit 22, the shutter rotating unit 27, the opposing member lifting unit 28, and the like in accordance with a predetermined program. Further, the control device 3 controls the chemical liquid valve 21, the rinse liquid valve 37, the central gas valve 39, the peripheral gas valve 42, the first flow rate adjustment valve 43, the cleaning liquid upper valve 47, the suction valve 51, and the cleaning liquid lower valve. 54. Opening and closing operations of the second flow rate adjusting valve 55 and the like.

圖8為用以說明基板處理裝置1之基板處理例之流程圖。圖9為用以說明藥液步驟(S2)之圖解性剖視圖。圖10為用以說 明沖洗步驟(S3)之圖解性剖視圖。圖11為用以說明旋轉乾燥步驟(S4)之圖解性剖視圖。 FIG. 8 is a flow chart for explaining an example of substrate processing of the substrate processing apparatus 1. Figure 9 is a schematic cross-sectional view for explaining the chemical liquid step (S2). Figure 10 is used to say A schematic cross-sectional view of the rinsing step (S3). Figure 11 is a schematic cross-sectional view for explaining the spin drying step (S4).

以下,參照圖2、圖7及圖8,對基板處理例進行說明。且適宜參照圖9~圖11。此基板處理例,係用以除去形成在基板W之上面之光阻之光阻除去處理。 Hereinafter, an example of substrate processing will be described with reference to FIGS. 2, 7, and 8. And it is suitable to refer to FIG. 9 to FIG. This substrate processing example is a photoresist removal process for removing the photoresist formed on the upper surface of the substrate W.

於藉由處理單元2對基板W實施光阻除去處理時,將高劑量下之離子植入處理後之基板W搬入艙體4之內部(步驟S1)。自基板W之搬入前起,將周圍氣體閥42開啟,朝筒狀間隙29供給來自周圍氣體配管41之惰性氣體。此時之供給流量(亦即,來自周圍氣體吐出口30之吐出流量),藉由第1流量調整閥43之調整,被調整為小流量(約10(公升/分))。假設,搬入之基板W係未曾進行用以將光阻灰化(ashing)之處理者。 When the substrate W is subjected to the photoresist removal process by the processing unit 2, the substrate W after the ion implantation process at a high dose is carried into the interior of the pod 4 (step S1). The ambient gas valve 42 is opened from the front of the loading of the substrate W, and the inert gas from the surrounding gas pipe 41 is supplied to the cylindrical gap 29. The supply flow rate at this time (that is, the discharge flow rate from the ambient gas discharge port 30) is adjusted to a small flow rate (about 10 (liter/min)) by the adjustment of the first flow rate adjustment valve 43. It is assumed that the substrate W that has been carried in has not been subjected to a process for ashing the photoresist.

具體而言,控制裝置3,在對向構件7及噴嘴8退避至退避位置,且藥液噴嘴19自旋轉夾頭5之上方退避之狀態下,使保持基板W之基板搬送機器人CR(參照圖1)之機械手H(參照圖1)進入艙體4之內部,於基板W表面(光阻形成面)朝向上方之狀態下將基板W交接至旋轉夾頭5。然後,控制裝置3藉由旋轉馬達16開始使基板W旋轉。然後,使基板W上昇至預定之液體處理速度(於1~500rpm之範圍內,例如約為10rpm),且維持於此液體處理速度。 Specifically, the control device 3 retracts the opposing member 7 and the nozzle 8 to the retracted position, and the substrate transfer robot CR holding the substrate W in a state where the chemical liquid nozzle 19 is retracted from above the rotary chuck 5 (refer to the figure) 1) The robot H (see FIG. 1) enters the inside of the cabin 4, and the substrate W is transferred to the spin chuck 5 with the surface of the substrate W (the photoresist forming surface) facing upward. Then, the control device 3 starts rotating the substrate W by the rotation motor 16. Then, the substrate W is raised to a predetermined liquid processing speed (in the range of 1 to 500 rpm, for example, about 10 rpm), and maintained at this liquid processing speed.

若基板W之旋轉速度達到液體處理速度,接著,控制裝置3進行朝基板W供給高溫之SPM之藥液步驟(步驟S2)。於藥液步驟(S2)中,自藥液噴嘴19吐出之SPM,著液於基板W之上面中央部。 When the rotation speed of the substrate W reaches the liquid processing speed, the control device 3 performs a chemical liquid step of supplying the high temperature SPM to the substrate W (step S2). In the chemical liquid step (S2), the SPM discharged from the chemical liquid nozzle 19 is immersed in the upper center portion of the substrate W.

具體而言,控制裝置3控制噴嘴移動單元22,使藥液噴嘴19自原位置朝中央位置移動。藉此,將藥液噴嘴19配置於基板W之中央部之上方。 Specifically, the control device 3 controls the nozzle moving unit 22 to move the chemical liquid nozzle 19 from the home position toward the center position. Thereby, the chemical liquid nozzle 19 is disposed above the central portion of the substrate W.

於將藥液噴嘴19配置於基板W之上方後,控制裝置3開啟藥液閥21。藉此,自藥液噴嘴19之吐出口吐出高溫(例如約170℃~約180℃)之SPM,且著液於基板W之上面之中央部。著液於基板W之上面之SPM,受到因基板W之旋轉而產生之離心力,沿基板W之上面朝外側流動。藉此,如圖9所示,基板W之上面全域,藉由SPM之液膜70所覆蓋。藉此,以高溫之SPM,自基板W之表面除去光阻。 After the chemical liquid nozzle 19 is placed above the substrate W, the control device 3 opens the chemical liquid valve 21. Thereby, a high temperature (for example, about 170 ° C to about 180 ° C) SPM is discharged from the discharge port of the chemical liquid nozzle 19, and is immersed in the central portion of the upper surface of the substrate W. The SPM that is placed on the upper surface of the substrate W is subjected to centrifugal force generated by the rotation of the substrate W, and flows outward along the upper surface of the substrate W. Thereby, as shown in FIG. 9, the entire upper surface of the substrate W is covered by the liquid film 70 of SPM. Thereby, the photoresist is removed from the surface of the substrate W at a high temperature SPM.

於此藥液步驟(S2)中,藉由高溫之SPM之朝基板W之供給,於基板W之上面周圍產生大量之SPM霧氣,此SPM霧氣,會在基板W之上方浮游。於藥液步驟(S2)中,雖然對向構件7及噴嘴8係位於退避位置(例如,遮斷板23之基板對向面23a自旋轉台18之上面朝上方分離既定之間隔W2(參照圖9)之位置。間隔W2例如約為150mm),而且自周圍氣體吐出口30吐出有小流量(例如,約10(公升/分))之惰性氣體,但由於藥液步驟(S2)中之SPM霧氣之產生量為大量,因此SPM霧氣,仍有可能自周圍氣體吐出口30進入筒狀間隙29內。該情況下,該SPM霧氣,可能會附著於遮斷板23之內周面25a、旋轉軸24之內周面24a、或本體31之外周面31a。可以推測SPM霧氣會進入至筒狀間隙29之深處。此外,SPM霧氣還有可能附著於噴嘴8之下端部(對向部)8a。附著於此等噴嘴8之藥液霧氣(SPM霧氣等),會變為塵粒而成為基板汙染之原因。 In the chemical liquid step (S2), a large amount of SPM mist is generated around the upper surface of the substrate W by the supply of the high temperature SPM toward the substrate W, and the SPM mist floats above the substrate W. In the chemical liquid step (S2), the opposing member 7 and the nozzle 8 are located at the retracted position (for example, the substrate opposing surface 23a of the blocking plate 23 is separated upward from the upper surface of the rotating table 18 by a predetermined interval W2 (refer to the figure). 9). The interval W2 is, for example, about 150 mm), and an inert gas having a small flow rate (for example, about 10 (liter/min)) is discharged from the surrounding gas discharge port 30, but due to the SPM in the chemical liquid step (S2) The amount of mist generated is large, so the SPM mist may still enter the cylindrical gap 29 from the surrounding gas discharge port 30. In this case, the SPM mist may adhere to the inner circumferential surface 25a of the blocking plate 23, the inner circumferential surface 24a of the rotating shaft 24, or the outer circumferential surface 31a of the body 31. It can be inferred that the SPM mist will enter the depth of the cylindrical gap 29. Further, it is also possible that the SPM mist adheres to the lower end portion (opposing portion) 8a of the nozzle 8. The chemical mist (such as SPM mist) adhering to the nozzles 8 causes dust particles to become a cause of substrate contamination.

自SPM之吐出開始經過預定之藥液處理期間後,結 束藥液步驟(S2)。具體而言,控制裝置3關閉藥液閥21,使來自藥液噴嘴19之高溫之SPM之吐出停止,然後控制噴嘴移動單元22,使藥液噴嘴19退避至退避位置。 After the SPM spit starts and after the predetermined chemical treatment period, the knot The liquid medicine step (S2). Specifically, the control device 3 closes the chemical liquid valve 21, stops the discharge of the high temperature SPM from the chemical liquid nozzle 19, and then controls the nozzle moving unit 22 to retract the chemical liquid nozzle 19 to the retracted position.

接著,進行朝基板W之上面供給沖洗液之沖洗步驟(步驟S3)。具體而言,控制裝置3控制對向構件昇降單元28,如圖10所示,將對向構件7及噴嘴8配置於上側中間位置。此上側中間位置,例如為遮斷板23之基板對向面23a自旋轉台18之上面朝上方分離約60mm之位置。 Next, a rinsing step of supplying the rinsing liquid to the upper surface of the substrate W is performed (step S3). Specifically, the control device 3 controls the opposing member lifting unit 28, and as shown in FIG. 10, the opposing member 7 and the nozzle 8 are disposed at the upper intermediate position. The upper intermediate position is, for example, a position at which the substrate opposing surface 23a of the blocking plate 23 is separated upward from the upper surface of the rotating table 18 by about 60 mm.

然後,控制裝置3將沖洗液閥37開啟。藉此,如圖10所示,自噴嘴8之處理液吐出口35朝基板W之上面中央部吐出沖洗液。自處理液吐出口35吐出之沖洗液,著液於基板W之上面中央部,且受到因基板W之旋轉而產生之離心力,而於基板W之上面上朝基板W之周緣部流動。然後,基板W上之SPM,藉由沖洗液被朝外側推擠,而被朝基板W之周圍排出,於是,基板W上之SPM之液膜70,會被覆蓋基板W之上面全域之沖洗液之液膜80取代。亦即,藉由沖洗液沖洗SPM。然後,若自沖洗液閥37開啟後經過既定時間,控制裝置3將沖洗液閥37關閉,使來自處理液吐出口35之沖洗液之吐出停止。 Then, the control device 3 opens the flushing liquid valve 37. As a result, as shown in FIG. 10, the rinse liquid is discharged from the processing liquid discharge port 35 of the nozzle 8 toward the center portion of the upper surface of the substrate W. The rinsing liquid discharged from the processing liquid discharge port 35 is immersed in the center portion of the upper surface of the substrate W, and is subjected to centrifugal force generated by the rotation of the substrate W, and flows toward the peripheral portion of the substrate W on the upper surface of the substrate W. Then, the SPM on the substrate W is pushed outward by the rinsing liquid, and is discharged toward the periphery of the substrate W, so that the liquid film 70 of the SPM on the substrate W is covered with the entire surface of the substrate W. The liquid film 80 is replaced. That is, the SPM is rinsed by the rinse liquid. Then, when a predetermined time elapses after the flushing liquid valve 37 is opened, the control device 3 closes the flushing liquid valve 37 to stop the discharge of the flushing liquid from the processing liquid discharge port 35.

接著,進行使基板W乾燥之旋轉乾燥步驟(步驟S4)。具體而言,控制裝置3控制對向構件昇降單元28,使對向構件7下降而配置於接近位置。此接近位置例如為遮斷板23之基板對向面23a自旋轉台18之上面朝上方分離約1.5mm之位置,且於對向構件7位於接近位置時,遮斷板23將基板W之上面自其周圍之空間遮斷。 Next, a spin drying step of drying the substrate W is performed (step S4). Specifically, the control device 3 controls the opposing member lifting unit 28 to lower the opposing member 7 and arrange it at the approaching position. The approaching position is, for example, a position where the substrate opposing surface 23a of the blocking plate 23 is separated upward by about 1.5 mm from the upper surface of the rotating table 18, and when the opposing member 7 is in the approaching position, the blocking plate 23 places the upper surface of the substrate W. Interrupted from the space around it.

此外,控制裝置3控制旋轉馬達16,使基板W加速至較藥液步驟(S2)及沖洗步驟(S3)之旋轉速度大之乾燥旋轉速度(例如數千rpm),且以此乾燥旋轉速度使基板W旋轉。藉此,對基板W上之液體施加大的離心力,將附著於基板W之液體朝基板W之周圍甩脫。如此,自基板W除去液體,進而將基板W乾燥。 Further, the control device 3 controls the rotary motor 16 to accelerate the substrate W to a dry rotation speed (for example, several thousand rpm) which is larger than the rotation speed of the chemical liquid step (S2) and the rinsing step (S3), and the dry rotation speed is thereby made The substrate W is rotated. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is detached from the periphery of the substrate W. In this manner, the liquid is removed from the substrate W, and the substrate W is further dried.

此外,於旋轉乾燥步驟(S4)中,控制裝置3控制遮斷板旋轉單元27,以與基板W相同方向且大致相同速度,使遮斷板23及旋轉軸24高速旋轉。 Further, in the spin drying step (S4), the control device 3 controls the shutter rotation unit 27 to rotate the shutter 23 and the rotary shaft 24 at a high speed in the same direction and at substantially the same speed as the substrate W.

此外,於旋轉乾燥步驟(S4)中,控制裝置3調整第1流量調整閥43,使自周圍氣體配管41供給於筒狀間隙29之惰性氣體之流量增大為大流量(例如約150(公升/分))。藉此,於基板W之上面與遮斷板23之基板對向面23a之間的間隙,產生有自基板W之中央部流向周緣部之惰性氣體的穩定氣流,進而將基板W之上面附近之環境氣體自其周圍遮斷。 Further, in the spin drying step (S4), the control device 3 adjusts the first flow rate adjusting valve 43 to increase the flow rate of the inert gas supplied from the surrounding gas pipe 41 to the cylindrical gap 29 to a large flow rate (for example, about 150 liters /Minute)). Thereby, a stable airflow of the inert gas flowing from the central portion of the substrate W to the peripheral portion is generated in the gap between the upper surface of the substrate W and the substrate opposing surface 23a of the blocking plate 23, and the vicinity of the upper surface of the substrate W is further formed. The ambient gas is interrupted from its surroundings.

然後,若開始基板W之高速旋轉後經過既定時間,控制裝置3控制旋轉馬達16,使旋轉夾頭5帶動之基板W之旋轉停止,並控制遮斷板旋轉單元27,使遮斷板23及旋轉軸24之旋轉停止。此外,控制裝置3調整第1流量調整閥43,使自周圍氣體配管41供給於筒狀間隙29之惰性氣體之流量降低為小流量(例如約10(公升/分))。 Then, when a predetermined time elapses after the high-speed rotation of the substrate W is started, the control device 3 controls the rotary motor 16 to stop the rotation of the substrate W driven by the rotary chuck 5, and controls the shutter rotation unit 27 to cause the shutter 23 and The rotation of the rotary shaft 24 is stopped. Moreover, the control device 3 adjusts the first flow rate adjustment valve 43 to reduce the flow rate of the inert gas supplied from the surrounding gas pipe 41 to the cylindrical gap 29 to a small flow rate (for example, about 10 (liter/min)).

接著,將基板W自艙體4內搬出(步驟S5)。於基板W之搬出前,控制裝置3控制對向構件昇降單元28,使對向構件7及噴嘴8上昇至退避位置。 Next, the substrate W is carried out from the inside of the cabin 4 (step S5). Before the substrate W is carried out, the control device 3 controls the opposing member lifting unit 28 to raise the opposing member 7 and the nozzle 8 to the retracted position.

接著,控制裝置3使基板搬送機器人CR之機械手H 進入艙體4之內部。然後,控制裝置3使基板搬送機器人CR之機械手H保持旋轉夾頭5上之基板W。然後,控制裝置3使基板搬送機器人CR之機械手H自艙體4內退避。藉此,將處理完之基板W自艙體4搬出。 Next, the control device 3 causes the robot H of the substrate transfer robot CR Enter the interior of the cabin 4. Then, the control device 3 causes the robot H of the substrate transfer robot CR to hold the substrate W on the rotary chuck 5. Then, the control device 3 retracts the robot H of the substrate transfer robot CR from the inside of the cabin 4. Thereby, the processed substrate W is carried out from the cabin 4.

此外,於上述基板處理例中,也可於藥液步驟(S2)中,朝基板W供給高溫SPM之後,朝基板W之上面供給H2O2。於該情況下,基板W上之SPM被H2O2取代,不久,基板W之上面全域,藉由H2O2之液膜所覆蓋。 Further, in the above substrate processing example, in the chemical liquid step (S2), after the high temperature SPM is supplied to the substrate W, H 2 O 2 may be supplied to the upper surface of the substrate W. In this case, the SPM on the substrate W is replaced by H 2 O 2 , and soon, the entire upper surface of the substrate W is covered with a liquid film of H 2 O 2 .

此外,於上述基板處理例中,也可於沖洗步驟(S3)結束後,執行朝基板W之上面供給藥液之第2藥液步驟。該情況下,較佳為,於第2藥液步驟中使用之藥液,係與在藥液步驟(S2)中使用之藥液不同之藥液。於藥液步驟(S2)中使用高溫SPM作為藥液之情況下,於第2藥液步驟中可使用氫氟酸、SC1(包含NH4OH及H2O2之混合液)作為藥液。於執行第2藥液步驟之情況下,然後執行以沖洗液沖洗基板W之上面之藥液之第2沖洗步驟。 Further, in the above substrate processing example, the second chemical liquid supply step of supplying the chemical liquid onto the upper surface of the substrate W may be performed after the rinsing step (S3) is completed. In this case, it is preferable that the chemical liquid used in the second chemical liquid step is a chemical liquid different from the chemical liquid used in the chemical liquid step (S2). When high-temperature SPM is used as the chemical liquid in the chemical liquid step (S2), hydrofluoric acid and SC1 (including a mixed liquid of NH 4 OH and H 2 O 2 ) can be used as the chemical liquid in the second chemical liquid step. In the case where the second chemical liquid step is performed, a second rinsing step of rinsing the chemical liquid on the substrate W with the rinsing liquid is then performed.

然而,於藥液步驟(S2)中,大量產生於基板W之上面之周圍之藥液霧氣(SPM霧氣等),不僅會附著於噴嘴8之下端部8a,還有可能附著於本體31之外周面31a、旋轉軸24之內周面24a、或遮斷板23之內周面25a。附著於此等噴嘴8之藥液霧氣(SPM霧氣等),會變為塵粒而成為基板汙染之原因。並且,於旋轉乾燥步驟(S4)中,因大流量之惰性氣體流通於筒狀間隙29,附著於內周面24a或本體31之外周面31a之塵粒,有可能自周圍氣體吐出口30吐出。假如,於旋轉乾燥步驟(S4)中,若塵粒被吐出至基板W之上面,則會汙染藥液處理後之基板W。 However, in the chemical liquid step (S2), a large amount of chemical mist (SPM mist, etc.) generated around the upper surface of the substrate W not only adheres to the lower end portion 8a of the nozzle 8, but may also adhere to the outer periphery of the body 31. The surface 31a, the inner circumferential surface 24a of the rotating shaft 24, or the inner circumferential surface 25a of the blocking plate 23. The chemical mist (such as SPM mist) adhering to the nozzles 8 causes dust particles to become a cause of substrate contamination. In the spin drying step (S4), the inert gas having a large flow rate flows through the cylindrical gap 29, and the dust particles adhering to the inner peripheral surface 24a or the outer peripheral surface 31a of the main body 31 may be discharged from the surrounding gas discharge port 30. . In the spin drying step (S4), if the dust particles are discharged onto the upper surface of the substrate W, the substrate W after the chemical liquid treatment is contaminated.

為了洗淨附著於噴嘴8之本體31之外表面(外周面31a或對向面31b)之藥液霧氣,可考慮執行自下方對噴嘴8吹吐洗淨液之對策(接下來敘述之對向部洗淨步驟)。然而,於此對策中,只能將筒狀間隙29中的周圍氣體吐出口30附近之部分洗淨。如上述,由於藥液霧氣(SPM霧氣等)會進入至筒狀間隙29之深處,因此需要良好地洗淨筒狀間隙29全域。 In order to wash the chemical mist adhering to the outer surface (outer peripheral surface 31a or the opposite surface 31b) of the main body 31 of the nozzle 8, it is conceivable to perform the countermeasure of blowing the washing liquid to the nozzle 8 from below (the following description is directed to the opposite direction). Partial washing step). However, in this measure, only the portion in the vicinity of the surrounding gas discharge port 30 in the cylindrical gap 29 can be washed. As described above, since the chemical mist (SPM mist or the like) enters the depth of the cylindrical gap 29, it is necessary to wash the entire cylindrical gap 29 well.

因此,於本基板處理例中,準備洗淨噴嘴8之噴嘴洗淨步驟(步驟S6。圖8中以虛線圖示)。噴嘴洗淨步驟(S6),並非於基板處理例之執行中每次皆會進行之步驟,而是於每預定時間或每預定片數之基板處理中被執行。亦即,於基板W之搬出後,在尚不是噴嘴洗淨之時機時,對下一基板W開始新的基板處理。另一方面,於基板W之搬出後,若達噴嘴洗淨之時機,則執行噴嘴洗淨步驟(S6)。 Therefore, in the substrate processing example, the nozzle cleaning step of the cleaning nozzle 8 is prepared (step S6, which is indicated by a broken line in Fig. 8). The nozzle cleaning step (S6) is not performed every time the substrate processing example is performed, but is performed every predetermined time or every predetermined number of substrates. That is, after the substrate W is carried out, when the nozzle is not washed, a new substrate process is started on the next substrate W. On the other hand, after the substrate W is carried out, if the nozzle is cleaned, the nozzle cleaning step (S6) is performed.

於噴嘴洗淨步驟(S6)中,藉由洗淨液將筒狀間隙29洗淨,並藉由洗淨液將噴嘴8之下端部8a(亦即,包含處理液吐出口35及中央氣體吐出口36之區域)洗淨(對向部洗淨步驟)。 In the nozzle cleaning step (S6), the cylindrical gap 29 is washed by the cleaning liquid, and the lower end portion 8a of the nozzle 8 is closed by the cleaning liquid (that is, the treatment liquid discharge port 35 and the central gas are discharged). The area of the outlet 36 is washed (the cleaning step of the opposite part).

圖12為用以說明圖8所示之噴嘴洗淨步驟(S6)之流程圖。圖13為用以說明噴嘴洗淨步驟(S6)之圖解性剖視圖。 Fig. 12 is a flow chart for explaining the nozzle cleaning step (S6) shown in Fig. 8. Figure 13 is a schematic cross-sectional view for explaining the nozzle washing step (S6).

自噴嘴洗淨步驟(S6)之開始前起,周圍氣體閥42處於開啟狀態。此時,自周圍氣體配管41朝筒狀間隙29之惰性氣體之供給流量,被調整為小流量(例如約10(公升/分))。 The ambient gas valve 42 is in an open state from the start of the nozzle cleaning step (S6). At this time, the supply flow rate of the inert gas from the surrounding gas pipe 41 to the cylindrical gap 29 is adjusted to a small flow rate (for example, about 10 (liter/min)).

於噴嘴洗淨步驟(S6)中,控制裝置3控制對向構件昇降單元28,使對向構件7及噴嘴8下降,且配置於下側中間位置(步驟T1)。此下側中間位置,例如為噴嘴8之本體31之對向面31b 自旋轉台18之上面朝上方分離間隔W3(參照圖13)之位置。間隔W3例如約10mm。 In the nozzle cleaning step (S6), the control device 3 controls the opposing member lifting unit 28 to lower the opposing member 7 and the nozzle 8 and arrange them at the lower intermediate position (step T1). This lower intermediate position is, for example, the opposite surface 31b of the body 31 of the nozzle 8. The position of the space W3 (refer to FIG. 13) is separated upward from the upper surface of the turntable 18. The interval W3 is, for example, about 10 mm.

於將對向構件7及噴嘴8配置於下側中間位置之後,控制裝置3控制遮斷板旋轉單元27,使遮斷板23以噴嘴洗淨速度(例如約800rpm)旋轉(T2:旋轉步驟)。藉此,遮斷板23及旋轉軸24,相對於噴嘴8進行相對旋轉。此外,與遮斷板23及旋轉軸24之旋轉開始同時,控制裝置3,在維持使噴嘴8靜止之狀態不變下,控制旋轉馬達16,使旋轉台18以既定之低旋轉速度(例如約100rpm)旋轉。 After the opposing member 7 and the nozzle 8 are disposed at the lower intermediate position, the control device 3 controls the blocking plate rotating unit 27 to rotate the blocking plate 23 at the nozzle washing speed (for example, about 800 rpm) (T2: rotation step). . Thereby, the blocking plate 23 and the rotating shaft 24 are relatively rotated with respect to the nozzle 8. Further, simultaneously with the start of the rotation of the shutter 23 and the rotary shaft 24, the control device 3 controls the rotary motor 16 while maintaining the state in which the nozzle 8 is stationary, so that the rotary table 18 has a predetermined low rotational speed (for example, 100 rpm) rotation.

若遮斷板23之旋轉速度達到噴嘴洗淨速度,則控制裝置3將洗淨液上閥47(參照圖2)及洗淨液下閥54(參照圖2)開啟(步驟T3)。 When the rotation speed of the shutter 23 reaches the nozzle cleaning speed, the control device 3 opens the cleaning liquid upper valve 47 (see FIG. 2) and the cleaning liquid lower valve 54 (see FIG. 2) (step T3).

藉由開啟洗淨液上閥47,自洗淨液吐出口32朝斜下方吐出洗淨液(洗淨液吐出步驟)。自洗淨液吐出口32吐出之洗淨液之吐出流量,例如約800(公升/分)。藉此,如圖5及圖6所示,一面使對向構件7相對於噴嘴8之本體31而進行旋轉,一面自形成於本體31之外周面31a之洗淨液吐出口32朝旋轉軸24之內周面24a吐出洗淨液。其結果,於筒狀間隙29形成有朝向下方之旋流R。 By opening the cleaning liquid upper valve 47, the washing liquid is discharged obliquely downward from the washing liquid discharge port 32 (washing liquid discharging step). The discharge flow rate of the washing liquid discharged from the washing liquid discharge port 32 is, for example, about 800 (liter/min). As a result, as shown in FIG. 5 and FIG. 6, the opposing member 7 is rotated from the main body 31 of the nozzle 8 to the rotating shaft 24 from the cleaning liquid discharge port 32 formed on the outer peripheral surface 31a of the main body 31. The inner peripheral surface 24a discharges the washing liquid. As a result, a swirling flow R directed downward is formed in the cylindrical gap 29.

此外,與來自洗淨液吐出口32之洗淨液之吐出同步,自較在筒狀間隙29中供給有來自洗淨液吐出口32之洗淨液之供給位置靠上方的部位供給惰性氣體(氣體供給步驟)。藉此,可抑制供給於筒狀間隙29之洗淨液之上昇,因而可更進一步良好地形成朝向下方之旋流R。 In addition, in synchronization with the discharge of the cleaning liquid from the cleaning liquid discharge port 32, the inert gas is supplied from a portion above the supply position of the cleaning liquid supplied from the cleaning liquid discharge port 32 in the cylindrical gap 29 ( Gas supply step). Thereby, the rise of the washing liquid supplied to the cylindrical gap 29 can be suppressed, and the swirling flow R directed downward can be formed more satisfactorily.

此外,藉由開啟洗淨液下閥54,自下面噴嘴52朝鉛 垂上方吐出洗淨液,藉此,對噴嘴8之下端部(對向部)8a吹吐洗淨液,進而將下端部8a洗淨(對向部洗淨步驟)。此時,來自下面噴嘴52之洗淨液之吐出流量,係能使自下面噴嘴52向上吹吐之洗淨液到達配置於下側中間位置(圖12所示之位置)之噴嘴8的下端部8a之流量,例如約1500(公升/分)。 In addition, by opening the cleaning liquid lower valve 54, the lead nozzle 52 is directed toward the lead The cleaning liquid is discharged vertically, and the cleaning liquid is blown to the lower end portion (opposing portion) 8a of the nozzle 8, and the lower end portion 8a is washed (the cleaning step of the opposite portion). At this time, the discharge flow rate of the cleaning liquid from the lower nozzle 52 is such that the cleaning liquid which is blown upward from the lower nozzle 52 reaches the lower end portion of the nozzle 8 disposed at the lower intermediate position (the position shown in FIG. 12). The flow rate of 8a, for example, about 1500 (liters per minute).

來自洗淨液吐出口32及下面噴嘴52之洗淨液之吐出,被持續至經過預定之洗淨期間(例如約30秒)(步驟T4)。 The discharge of the cleaning liquid from the cleaning liquid discharge port 32 and the lower nozzle 52 is continued until a predetermined washing period (for example, about 30 seconds) elapses (step T4).

若自洗淨液之吐出開始經過洗淨期間(步驟T4中YES),則控制裝置3將洗淨液上閥47及洗淨液下閥54關閉(步驟T5)。藉此,停止來自洗淨液吐出口32之洗淨液之吐出、及來自下面噴嘴52之洗淨液之吐出。 When the washing period has elapsed since the discharge of the washing liquid has elapsed (YES in step T4), the control device 3 closes the cleaning liquid upper valve 47 and the cleaning liquid lower valve 54 (step T5). Thereby, the discharge of the washing liquid from the washing liquid discharge port 32 and the discharge of the washing liquid from the lower nozzle 52 are stopped.

於關閉洗淨液上閥47之後,控制裝置3開啟吸引閥51。藉此,吸引較洗淨液供給配管48中之分歧位置48a靠下游側部分內之洗淨液(步驟T6)。將SPM吸引至SPM之前端面(下端面)後退至既定位置之後,控制裝置3將吸引閥51關閉。 After the cleaning liquid upper valve 47 is closed, the control device 3 opens the suction valve 51. Thereby, the washing liquid in the downstream side portion of the divergent position 48a in the cleaning liquid supply pipe 48 is sucked (step T6). After the SPM is sucked to the front end (lower end surface) of the SPM and retreated to a predetermined position, the control device 3 closes the suction valve 51.

此外,控制裝置3,在關閉洗淨液上閥47及洗淨液下閥54之後,控制遮斷板旋轉單元27,使遮斷板23及旋轉軸24之旋轉停止(步驟T7),且控制對向構件昇降單元28,使對向構件7及噴嘴8上昇至退避位置(步驟T8)。藉此,結束噴嘴洗淨步驟(S6)。 Further, after the cleaning liquid upper valve 47 and the cleaning liquid lower valve 54 are closed, the control device 3 controls the blocking plate rotating unit 27 to stop the rotation of the blocking plate 23 and the rotating shaft 24 (step T7), and controls The opposing member lifting unit 28 raises the opposing member 7 and the nozzle 8 to the retracted position (step T8). Thereby, the nozzle washing step (S6) is ended.

如上述,根據本實施形態,一面使對向構件7及噴嘴8之本體31相對旋轉,一面自形成於本體31之外周面31a之洗淨液吐出口32朝對向構件7之內周面24a吐出洗淨液。由於內周面24a相對於外周面31a而旋轉,因此自洗淨液吐出口32吐出之洗淨液,被內周面24a之旋轉牽引,一面迴旋一面流向下方。亦即,於 筒狀間隙29產生有旋流。因此,於流動於筒狀間隙29之洗淨液上作用有離心力及重力,藉由此等之物理上之力,可除去附著於內周面25a、內周面24a及/或外周面31a之汙染物質。藉此,可良好地洗淨筒狀間隙29。 As described above, according to the present embodiment, the cleaning liquid discharge port 32 formed on the outer peripheral surface 31a of the main body 31 is opposed to the inner peripheral surface 24a of the opposing member 7 while the main body 31 of the opposing member 7 and the nozzle 8 are relatively rotated. Spit out the cleaning solution. Since the inner peripheral surface 24a is rotated with respect to the outer peripheral surface 31a, the washing liquid discharged from the washing liquid discharge port 32 is pulled by the rotation of the inner peripheral surface 24a, and flows downward while swirling. That is, The cylindrical gap 29 is generated with a swirling flow. Therefore, centrifugal force and gravity act on the cleaning liquid flowing through the cylindrical gap 29, and the physical force can be removed to adhere to the inner circumferential surface 25a, the inner circumferential surface 24a, and/or the outer circumferential surface 31a. Contaminants. Thereby, the cylindrical gap 29 can be satisfactorily washed.

此外,洗淨液供給單元10包含插通於本體31之內部之洗淨液配管44。並且,洗淨液配管44包含上下方向配管45、及自上下方向配管45之上端朝斜下方延伸之連接配管46。藉此,可容易實現一面使洗淨液配管44插通於本體31之內部,一面自形成於外周面31a之洗淨液吐出口32朝內周面24a吐出洗淨液之構成。 Further, the cleaning liquid supply unit 10 includes a cleaning liquid pipe 44 that is inserted into the inside of the body 31. Further, the cleaning liquid pipe 44 includes a vertical pipe 45 and a connecting pipe 46 extending obliquely downward from the upper end of the vertical pipe 45. By this means, the cleaning liquid pipe 44 can be easily inserted into the inside of the main body 31, and the washing liquid is discharged from the washing liquid discharge port 32 formed on the outer peripheral surface 31a toward the inner peripheral surface 24a.

由於對向構件7係可旋轉之構成,因此需要將洗淨液配管44配置為不會干擾對向構件7。於本實施形態中,由於將洗淨液配管44插通於本體31之內部,因此不會干擾對向構件7,而可良好地將洗淨液供給於洗淨液吐出口32。 Since the opposing member 7 is rotatable, it is necessary to arrange the cleaning liquid pipe 44 so as not to interfere with the opposing member 7. In the present embodiment, since the cleaning liquid pipe 44 is inserted into the inside of the main body 31, the cleaning liquid can be satisfactorily supplied to the cleaning liquid discharge port 32 without interfering with the opposing member 7.

此外,如上述,以遮斷驅動零件收容空間56(參照圖2)之環境氣體與艙體4(參照圖2)內之環境氣體之方式,於連通道57(參照圖2)介設有迷宮等之氣封58(參照圖2)。若驅動零件收容空間56內被供給洗淨液等之液體,則有可能會影響驅動零件收容空間56內之驅動零件,因此希望洗淨液等之液體不會自筒狀間隙29進入連通道57。由於將洗淨液吐出口32配置於較筒狀間隙29之連通道57之連接位置29a靠下方,因此洗淨液難以進入連通道57。尤其是,於本實施形態中,自洗淨液吐出口32朝斜下方吐出洗淨液,並且,與來自洗淨液吐出口32之洗淨液之吐出同步,於筒狀間隙29中自上方供給有惰性氣體,因此,可確實地抑制供給於筒狀間隙29之洗淨液之上昇。藉此,可良好地形成朝下方之旋流R。 Further, as described above, the labyrinth of the drive unit accommodating space 56 (see FIG. 2) and the ambient gas in the cabin 4 (see FIG. 2) are interrupted, and a labyrinth is provided in the connecting passage 57 (refer to FIG. 2). Wait for the gas seal 58 (see Figure 2). When the liquid such as the cleaning liquid is supplied into the driving component housing space 56, the driving components in the driving component housing space 56 may be affected. Therefore, it is desirable that the liquid such as the cleaning liquid does not enter the connecting passage 57 from the cylindrical gap 29. . Since the cleaning liquid discharge port 32 is disposed below the connection position 29a of the connecting passage 57 of the cylindrical gap 29, it is difficult for the cleaning liquid to enter the connecting passage 57. In particular, in the present embodiment, the cleaning liquid is discharged obliquely downward from the cleaning liquid discharge port 32, and is synchronized with the discharge of the cleaning liquid from the cleaning liquid discharge port 32, and is in the cylindrical gap 29 from above. Since the inert gas is supplied, the rise of the washing liquid supplied to the cylindrical gap 29 can be surely suppressed. Thereby, the swirling flow R toward the lower side can be formed favorably.

此外,於本實施形態中,同步執行筒狀間隙29之洗淨(來自洗淨液吐出口32之洗淨液之吐出)、及噴嘴8之下端部8a之洗淨(對向部洗淨步驟)。藉此,與分別以不同之時間進行筒狀間隙29之洗淨、及噴嘴8之下端部8a之洗淨之情況比較,可以短時間執行噴嘴8之洗淨。 Further, in the present embodiment, the cleaning of the cylindrical gap 29 (discharge of the cleaning liquid from the cleaning liquid discharge port 32) and the cleaning of the lower end portion 8a of the nozzle 8 are performed in synchronization (the cleaning step of the opposite portion) ). Thereby, the cleaning of the nozzle 8 can be performed in a short time as compared with the case where the cleaning of the cylindrical gap 29 and the cleaning of the lower end portion 8a of the nozzle 8 are performed at different times.

圖14為用以說明本發明之其他實施形態之處理單元202之構成例之圖解性剖視圖。 Fig. 14 is a schematic cross-sectional view showing a configuration example of a processing unit 202 according to another embodiment of the present invention.

於圖14所示之實施形態中,對與上述實施形態(圖1~圖13所示之實施形態)共同之部分,賦予與圖1~圖13之情況相同的元件符號,並省略說明。處理單元202與上述實施形態之處理單元2之主要差異在於:在處理液處理中,對向構件207係可一體旋轉地被支撐於旋轉夾頭205。亦即,對向構件207,係隨旋轉夾頭205而旋轉之從動型之對向構件(遮斷構件)。 In the embodiment shown in FIG. 14 , the same components as those in the above-described embodiment (the embodiment shown in FIG. 1 to FIG. 13 ) are denoted by the same reference numerals as those in FIGS. 1 to 13 , and the description thereof is omitted. The main difference between the processing unit 202 and the processing unit 2 of the above-described embodiment is that the opposing member 207 is supported by the rotating chuck 205 integrally rotatable in the processing liquid processing. That is, the opposing member 207 is a driven type opposing member (blocking member) that rotates with the rotating chuck 205.

處理單元202包含:艙體4;旋轉夾頭(基板保持單元)205,其於艙體4內以水平姿勢保持一片基板W,且使基板W繞通過基板W之中心之鉛垂之旋轉軸線A1旋轉;藥液供給單元6;對向構件207,其與保持在旋轉夾頭205之基板W之上面對向;噴嘴8,其上下插通於對向構件207之中央部;洗淨液供給單元10;下面單元11;及杯體12。 The processing unit 202 includes a cabin 4, a rotating chuck (substrate holding unit) 205 that holds a substrate W in a horizontal posture in the cabin 4, and causes the substrate W to wrap around a vertical axis of rotation A1 passing through the center of the substrate W. Rotating; the chemical supply unit 6; the facing member 207 facing the substrate W held by the rotating chuck 205; the nozzle 8 being inserted into the central portion of the facing member 207; the cleaning liquid supply Unit 10; lower unit 11; and cup 12.

作為旋轉夾頭205,係與旋轉夾頭5相同,採用於水平方向夾持基板W而水平保持基板W之夾持式之夾頭。旋轉夾頭205包含:旋轉馬達16;旋轉軸17;及圓板狀之旋轉台218,其大致水平地安裝於旋轉軸17之上端。於旋轉台218之上面且以旋轉軸線A1為中心之圓周上配置有複數個(3個以上。例如6個)之夾持 構件9。於旋轉台218之上面且以旋轉軸線A1為中心之圓周上配置有複數個(3個以上)之用以自下方支撐對向構件207之對向構件支撐部231。對向構件支撐部231與旋轉軸線A1之間的距離,係設定為較夾持構件9與旋轉軸線A1之間的距離大。 The rotary chuck 205 is the same as the rotary chuck 5, and is a clamp type in which the substrate W is sandwiched in the horizontal direction and the substrate W is horizontally held. The rotary chuck 205 includes a rotary motor 16 , a rotary shaft 17 , and a disk-shaped rotary table 218 that is mounted substantially horizontally at the upper end of the rotary shaft 17 . A plurality of (three or more, for example, six) clamps are disposed on the circumference of the rotary table 218 and centered on the rotation axis A1. Member 9. A plurality of (three or more) opposing member supporting portions 231 for supporting the opposing member 207 from below are disposed on the upper surface of the rotary table 218 and centered on the rotation axis A1. The distance between the opposing member support portion 231 and the rotation axis A1 is set to be larger than the distance between the clamp member 9 and the rotation axis A1.

此外,作為旋轉夾頭205,不限於夾持式者,例如,也可採用藉由真空吸附基板W之背面,以水平之姿勢保持基板W,並且於此狀態下繞鉛垂之旋轉軸線旋轉,藉以使被保持於旋轉夾頭205之基板W旋轉之真空吸附式者(真空吸盤)。 Further, the rotating chuck 205 is not limited to the clamp type. For example, the back surface of the substrate W may be vacuum-adsorbed, and the substrate W may be held in a horizontal posture, and in this state, rotated about a vertical rotation axis. The vacuum suction type (vacuum suction cup) which is rotated by the substrate W held by the rotary chuck 205.

圖15為放大顯示處理單元202所包含之對向構件207之剖視圖。參照圖14及圖15,說明對向構件207。 FIG. 15 is a cross-sectional view showing the opposite member 207 included in the enlarged processing unit 202. The opposing member 207 will be described with reference to Figs. 14 and 15 .

對向構件207包含:遮斷板223;卡合部232,其可一體移動地安裝於遮斷板223;及支撐部233,其安裝於支撐臂226之前端部,且與卡合部232卡合而用以自上方支撐遮斷板223。 The opposing member 207 includes: a blocking plate 223; an engaging portion 232 that is integrally movably mounted to the blocking plate 223; and a supporting portion 233 that is attached to the front end of the support arm 226 and that is engaged with the engaging portion 232. The combination is used to support the shutter 223 from above.

遮斷板223係具有較基板W大的直徑之圓板狀。遮斷板223係具有在其下面與基板W之上面全域對向之圓形之基板對向面223a、於基板對向面223a之周緣部朝下方突出之圓環狀之鍔部223b、及自較基板對向面223a之周緣略靠內側突出之旋轉夾頭抵接部223c。於基板對向面223a之中央部形成有上下貫通對向構件207之貫通孔225。貫通孔225係藉由圓筒狀之內周面225a所區劃。也可於內周面225a之下端部形成隨著朝下方而朝外側展開之錐形面。 The blocking plate 223 has a disk shape having a larger diameter than the substrate W. The blocking plate 223 has a circular substrate facing surface 223a that is circularly opposed to the entire upper surface of the substrate W, an annular dome portion 223b that protrudes downward from the peripheral edge portion of the substrate opposing surface 223a, and The rotary chuck abutting portion 223c protrudes slightly inward from the periphery of the substrate opposing surface 223a. A through hole 225 that vertically penetrates the opposing member 207 is formed in a central portion of the substrate facing surface 223a. The through hole 225 is partitioned by a cylindrical inner peripheral surface 225a. It is also possible to form a tapered surface which is developed outward toward the lower side at the lower end portion of the inner peripheral surface 225a.

卡合部232係於遮斷板223之上面,具有以圍繞貫通孔225之周圍之狀態固定之圓筒部230、自圓筒部230之上端朝徑向外側伸展之凸緣部234、及形成於凸緣部234之上面之第1凹凸 部235。凸緣部234,係位於較支撐部233之接下來將敘述之凸緣支撐部229靠上方之位置,且凸緣部234之外周,係較凸緣支撐部229之內周之直徑大。 The engaging portion 232 is formed on the upper surface of the blocking plate 223, and has a cylindrical portion 230 fixed in a state surrounding the periphery of the through hole 225, a flange portion 234 extending radially outward from the upper end of the cylindrical portion 230, and a flange portion 234 formed thereon. First unevenness on the upper surface of the flange portion 234 Department 235. The flange portion 234 is located above the flange support portion 229 which will be described later in the support portion 233, and the outer circumference of the flange portion 234 is larger than the inner circumference of the flange support portion 229.

第1凹凸部235,係藉由同心圓狀地交互配置圓環狀之凹部與圓環狀之凸部而設置。換言之,第1凹凸部235係剖面梳齒狀。 The first uneven portion 235 is provided by alternately arranging an annular concave portion and an annular convex portion concentrically. In other words, the first uneven portion 235 has a comb-tooth shape.

支撐部233具有:例如大致圓板狀之支撐部本體236;水平之凸緣支撐部229,其以中心軸線A3作為中心;連接部237,其連接支撐部本體236與凸緣支撐部229;及第2凹凸部238,其形成於凸緣部234之下面。支撐部本體236係被固定於支撐臂226之前端。 The support portion 233 has, for example, a substantially disk-shaped support portion body 236; a horizontal flange support portion 229 centered on the central axis A3; and a connection portion 237 that connects the support portion body 236 and the flange support portion 229; The second uneven portion 238 is formed below the flange portion 234. The support body 236 is fixed to the front end of the support arm 226.

第2凹凸部238,係與卡合部232之第1凹凸部235之上方對向。第2凹凸部238,係藉由同心圓狀地交互配置圓環狀之凹部與圓環狀之凸部而設置。換言之,第2凹凸部238係剖面梳齒狀。於支撐臂226位於下位置之狀態(遮斷板223被支撐於旋轉夾頭205之狀態)下,第1凹凸部235與第2凹凸部238間隔微小之間隙而相互嚙合,且藉由第2凹凸部238與第1凹凸部235區劃有迷宮240。 The second uneven portion 238 is opposed to the upper side of the first uneven portion 235 of the engaging portion 232. The second uneven portion 238 is provided by alternately arranging an annular concave portion and an annular convex portion concentrically. In other words, the second uneven portion 238 has a comb-tooth shape. When the support arm 226 is in the lower position (the state in which the blocking plate 223 is supported by the rotary chuck 205), the first uneven portion 235 and the second uneven portion 238 are meshed with each other with a small gap therebetween, and by the second The uneven portion 238 and the first uneven portion 235 are partitioned with a labyrinth 240.

支撐臂226係被支撐於臂支撐軸241,該臂支撐軸241係大致鉛垂地在旋轉夾頭205之側面延伸。於臂支撐軸241結合有由馬達等構成之臂擺動單元242。於臂支撐軸241結合有由伺服馬達或滾珠螺桿機構等構成之臂昇降單元245。 The support arm 226 is supported by an arm support shaft 241 that extends substantially vertically on the side of the rotary chuck 205. An arm swing unit 242 composed of a motor or the like is coupled to the arm support shaft 241. An arm lifting unit 245 composed of a servo motor or a ball screw mechanism or the like is coupled to the arm support shaft 241.

藉由臂擺動單元242,可使支撐臂226以設定於旋轉夾頭205之側面之鉛垂之擺動軸線A2為中心而於水平面內擺動。 藉由此擺動,可使對向構件207繞擺動軸線A2轉動。 By the arm swinging unit 242, the support arm 226 can be swung in the horizontal plane centering on the vertical swing axis A2 set on the side of the rotary chuck 205. By this swinging, the opposing member 207 can be rotated about the swing axis A2.

噴嘴8係與圖1~圖13所示之實施形態之情況相同,藉由形成於噴嘴8之周圍的圓筒狀之筒狀間隙所包圍。此筒狀間隙係與上述實施形態之筒狀間隙29相同之構成,因此賦予相同之元件符號,並省略對此筒狀間隙之詳細說明。於本實施形態中,噴嘴8具有可變更基板W之上面之處理流體之供給位置的作為掃描噴嘴之基本形態。 The nozzle 8 is surrounded by a cylindrical tubular gap formed around the nozzle 8 in the same manner as in the embodiment shown in Figs. 1 to 13 . Since the cylindrical gap is the same as the cylindrical gap 29 of the above-described embodiment, the same reference numerals are given to the same components, and a detailed description of the cylindrical gap will be omitted. In the present embodiment, the nozzle 8 has a basic form as a scanning nozzle that can change the supply position of the processing fluid on the upper surface of the substrate W.

藉由臂昇降單元245,可使支撐臂226在下位置(圖15所示之位置)與上位置(圖14所示之位置)之間進行昇降,藉此,可使對向構件207之遮斷板223,在接近於被保持在旋轉夾頭205之基板W之上面的處理位置(圖15所示之位置)、與大幅退避至旋轉夾頭205之上方之退避位置(圖14所示之位置)之間進行昇降。 By the arm lifting unit 245, the support arm 226 can be raised and lowered between the lower position (the position shown in FIG. 15) and the upper position (the position shown in FIG. 14), whereby the opposing member 207 can be blocked. The plate 223 is close to the processing position (the position shown in FIG. 15) held on the upper surface of the substrate W of the rotary chuck 205, and the retracted position (the position shown in FIG. 14) which is largely retracted above the rotary chuck 205. ) Lifting between.

具體而言,於支撐臂226位於上位置之狀態下,藉由支撐部233之凸緣支撐部229與凸緣部234卡合,將卡合部232、遮斷板223及噴嘴8支撐於支撐部233。亦即,遮斷板223藉由支撐臂226所懸吊。 Specifically, in a state where the support arm 226 is at the upper position, the flange support portion 229 of the support portion 233 is engaged with the flange portion 234, and the engagement portion 232, the blocking plate 223, and the nozzle 8 are supported by the support portion. Part 233. That is, the shutter 223 is suspended by the support arm 226.

於支撐臂226位於上位置之狀態下,藉由突設於凸緣支撐部229之上面之突起243與在圓周方向隔著間隔被形成於凸緣部234之孔244卡合,將遮斷板223沿圓周方向定位於支撐部233。 When the support arm 226 is in the upper position, the protrusion 243 protruding from the upper surface of the flange support portion 229 is engaged with the hole 244 formed in the flange portion 234 at intervals in the circumferential direction, and the shutter is blocked. The 223 is positioned in the circumferential direction on the support portion 233.

若臂昇降單元245使支撐臂226自上位置下降,則遮斷板223也自退避位置下降。然後,若遮斷板223之旋轉夾頭抵接部223c抵接於對向構件支撐部231,則遮斷板223及噴嘴8,藉由對向構件支撐部231而被支承。然後,若臂昇降單元245使支撐臂226下降,則支撐部233之凸緣支撐部229與凸緣部234之卡合被 解除,卡合部232、遮斷板223及噴嘴8,自支撐部233脫離,且藉由旋轉夾頭205所支撐。於此狀態下,伴隨旋轉夾頭205(旋轉台218)之旋轉,使遮斷板223旋轉。 When the arm lifting unit 245 lowers the support arm 226 from the upper position, the blocking plate 223 also descends from the retracted position. Then, when the rotary chuck abutting portion 223c of the blocking plate 223 abuts against the opposing member supporting portion 231, the blocking plate 223 and the nozzle 8 are supported by the opposing member supporting portion 231. Then, if the arm lifting unit 245 lowers the support arm 226, the flange support portion 229 of the support portion 233 is engaged with the flange portion 234. The engagement portion 232, the blocking plate 223, and the nozzle 8 are detached from the support portion 233 and supported by the rotary chuck 205. In this state, the shutter 223 is rotated in accordance with the rotation of the rotary chuck 205 (the rotary table 218).

於對保持在旋轉夾頭205之基板W實施處理液處理時,控制裝置3控制臂擺動單元242,使支撐臂226繞臂支撐軸241擺動,將對向構件207配置於旋轉夾頭205之上方。於此狀態下,臂昇降單元245使支撐臂226下降。於卡合部232、遮斷板223及噴嘴8被交接至旋轉夾頭205後,支撐臂226在下位置被停止下降。藉此,將遮斷板223配置於處理位置(圖15所示之位置)。於此狀態下,伴隨旋轉夾頭205(旋轉台218)之旋轉,遮斷板223進行旋轉。亦即,於將基板W保持於旋轉夾頭205且將支撐臂226配置於下位置之狀態下,藉由自旋轉馬達16朝旋轉軸17輸入旋轉驅動力,可使旋轉台218、基板W及遮斷板223繞旋轉軸線A1旋轉。 When the processing liquid processing is performed on the substrate W held by the rotary chuck 205, the control device 3 controls the arm swing unit 242 to swing the support arm 226 around the arm support shaft 241, and arranges the opposing member 207 above the rotary chuck 205. . In this state, the arm lifting unit 245 lowers the support arm 226. After the engaging portion 232, the blocking plate 223, and the nozzle 8 are transferred to the rotating chuck 205, the support arm 226 is stopped to descend at the lower position. Thereby, the blocking plate 223 is placed at the processing position (the position shown in FIG. 15). In this state, the shutter 223 rotates in accordance with the rotation of the rotary chuck 205 (the rotary table 218). In other words, when the substrate W is held by the rotary chuck 205 and the support arm 226 is placed at the lower position, the rotational driving force is input from the rotary motor 16 to the rotary shaft 17, so that the rotary table 218 and the substrate W can be rotated. The blocking plate 223 is rotated about the rotation axis A1.

於此狀態、即遮斷板223被配置於處理位置(圖15所示之位置)之狀態(支撐臂226位於下位置之狀態)下,第1凹凸部235與第2凹凸部238彼此不接觸且相互接近。分別為剖面梳齒狀之第1凹凸部235及第2凹凸部238,彼此間隔微小之間隙而相互嚙合,藉此,於支撐部233與卡合部232之間區劃有迷宮240。迷宮240連通於筒狀間隙29。於基板W之處理時,於伴隨旋轉夾頭205之旋轉而使遮斷板223旋轉之情況下,第1凹凸部235旋轉,但第2凹凸部238不旋轉。 In this state, that is, the state in which the blocking plate 223 is disposed at the processing position (the position shown in FIG. 15) (the state in which the support arm 226 is at the lower position), the first uneven portion 235 and the second uneven portion 238 are not in contact with each other. And close to each other. The first uneven portion 235 and the second uneven portion 238 each having a comb-tooth shape are meshed with each other with a slight gap therebetween, whereby the labyrinth 240 is partitioned between the support portion 233 and the engaging portion 232. The labyrinth 240 is in communication with the cylindrical gap 29. At the time of the processing of the substrate W, when the blocking plate 223 is rotated in accordance with the rotation of the rotary chuck 205, the first uneven portion 235 is rotated, but the second uneven portion 238 is not rotated.

於迷宮240連接有用以朝該迷宮240供給氣體(例如,氮氣等之惰性氣體)之氣體供給道250。氣體供給道250,包含:第1流道251,其自支撐臂226延伸跨越至支撐部本體236;圓環 狀之第1分歧管252,其連接於第1流道251;複數之氣體噴射口255,其於支撐部本體236之下面開口;圓環狀之第2分歧管254,其連接於各氣體噴射口255;及1或複數之第2流道253,其連接第1分歧管252與第2分歧管254。於氣體供給道250之第1流道251,供給有來自氣體供給源之氣體。供給於第1流道251之氣體之一例,為惰性氣體。惰性氣體例如為氮氣及清潔空氣之任一者。供給於氣體供給道250之氣體,係自氣體噴射口255朝迷宮240吐出。自氣體噴射口255吐出之氣體,被供給於迷宮240,然後供給於筒狀間隙29。亦即,藉由氣體噴射口255之氣體之吐出,於筒狀間隙29形成有氣體之下降氣流。此外,氣體噴射口255之氣體之吐出,於迷宮240中,有時也發揮用以防止來自筒狀間隙29側之環境氣體之進入的作為氣封之作用。 A gas supply path 250 for supplying a gas (for example, an inert gas such as nitrogen gas) to the labyrinth 240 is connected to the labyrinth 240. The gas supply channel 250 includes: a first flow channel 251 extending from the support arm 226 to the support body 236; the ring The first branch pipe 252 is connected to the first flow path 251; the plurality of gas injection ports 255 are opened below the support portion body 236; and the annular second branch pipe 254 is connected to each gas injection. Port 255; and 1 or a plurality of second flow passages 253 connecting the first branch pipe 252 and the second branch pipe 254. The gas from the gas supply source is supplied to the first flow path 251 of the gas supply path 250. An example of the gas supplied to the first flow path 251 is an inert gas. The inert gas is, for example, any of nitrogen gas and clean air. The gas supplied to the gas supply path 250 is discharged from the gas injection port 255 toward the labyrinth 240. The gas discharged from the gas injection port 255 is supplied to the labyrinth 240 and then supplied to the cylindrical gap 29. That is, a gas downflow is formed in the cylindrical gap 29 by the gas discharge from the gas injection port 255. Further, the discharge of the gas from the gas injection port 255 serves as a gas seal for preventing the entry of the ambient gas from the side of the cylindrical gap 29 in the labyrinth 240.

洗淨液吐出口32(參照圖3等),係配置於較筒狀間隙29之迷宮之連接位置29b靠下方。 The cleaning liquid discharge port 32 (see FIG. 3 and the like) is disposed below the connection position 29b of the labyrinth of the cylindrical gap 29.

於本實施形態中,也與圖1~圖13所示之實施形態之情況相同,執行噴嘴洗淨步驟(S6。參照圖8及圖12)。 Also in the present embodiment, as in the case of the embodiment shown in Figs. 1 to 13, the nozzle cleaning step (S6. See Figs. 8 and 12) is performed.

於本實施形態中,藉由噴嘴洗淨步驟(S6)之執行,除了在圖1~圖13所示之實施形態所述之作用功效外,還可獲得如下述之作用功效。 In the present embodiment, by the execution of the nozzle cleaning step (S6), in addition to the functions and effects described in the embodiments shown in Figs. 1 to 13, the following effects can be obtained.

亦即,不希望有洗淨液等之液體被供給於迷宮240內。由於將洗淨液吐出口32(參照圖3等)配置於較筒狀間隙29之迷宮之連接位置29b靠下方,因此,自洗淨液吐出口32吐出之洗淨液,難以進入迷宮240。尤其是,自洗淨液吐出口32朝斜下方吐出洗淨液,並且,與來自洗淨液吐出口32之洗淨液之吐出同步, 於筒狀間隙29中自上方供給有惰性氣體,因此,可確實地抑制供給於筒狀間隙29之洗淨液之上昇。藉此,可確實地防止洗淨液朝迷宮240之進入。 That is, a liquid such as a cleaning liquid is not required to be supplied into the labyrinth 240. Since the cleaning liquid discharge port 32 (see FIG. 3 and the like) is disposed below the connection position 29b of the labyrinth of the cylindrical gap 29, it is difficult for the washing liquid discharged from the washing liquid discharge port 32 to enter the labyrinth 240. In particular, the cleaning liquid is discharged from the cleaning liquid discharge port 32 obliquely downward, and is synchronized with the discharge of the cleaning liquid from the cleaning liquid discharge port 32. Since the inert gas is supplied from the upper side in the cylindrical gap 29, the rise of the washing liquid supplied to the cylindrical gap 29 can be surely suppressed. Thereby, the entry of the cleaning liquid toward the labyrinth 240 can be surely prevented.

以上,對本發明之2個實施形態進行說明,但本發明也可以其他之形態實施。 Although the two embodiments of the present invention have been described above, the present invention may be embodied in other forms.

例如,於藥液步驟(S2)中,與上述實施形態之情況相同,於使用SPM作為藥液之情況下,為了良好地除去形成於基板W之上面(表面)之光阻,可採用朝基板W之上面供給溫度較低之SPM,且以紅外線加熱器等加熱基板W之上面的方法。於該情況下,在藥液步驟(S2)中也會於基板W之上面之周圍產生大量之SPM霧氣,此SPM霧氣有可能自周圍氣體吐出口30進入筒狀間隙29,因此使用噴嘴洗淨步驟(S6)之噴嘴8之洗淨,可有效應對。 For example, in the chemical liquid step (S2), as in the case of the above embodiment, in the case where SPM is used as the chemical liquid, in order to favorably remove the photoresist formed on the upper surface (surface) of the substrate W, the substrate may be used. A method of supplying a lower temperature SPM to the upper surface of W and heating the upper surface of the substrate W with an infrared heater or the like. In this case, a large amount of SPM mist is generated around the upper surface of the substrate W in the chemical liquid step (S2), and the SPM mist may enter the cylindrical gap 29 from the surrounding gas discharge port 30, so that the nozzle is used for washing. The washing of the nozzle 8 in the step (S6) can be effectively dealt with.

此外,於藥液步驟(S2)中,可採用SPM以外之藥液作為藥液。具體而言,藥液也可為H2O2、硫酸、IPA(異丙醇)、氫氟酸、SC1(包含NH4OH及H2O2之混合液)、SC2(包含HCl與H2O2之混合液)、氟化銨、緩衝氫氟酸(氫氟酸與氟化銨之混合液)、FFOM(包含HF與O3之液體)、AOM(包含NH4OH及O3之液體)、HOM(包含H2SO4及O3之液體)等。 Further, in the chemical liquid step (S2), a chemical liquid other than SPM may be used as the chemical liquid. Specifically, the chemical solution may also be H 2 O 2 , sulfuric acid, IPA (isopropyl alcohol), hydrofluoric acid, SC1 (including a mixture of NH 4 OH and H 2 O 2 ), SC 2 (containing HCl and H 2 ). Mixture of O 2 ), ammonium fluoride, buffered hydrofluoric acid (mixture of hydrofluoric acid and ammonium fluoride), FFOM (liquid containing HF and O 3 ), AOM (liquid containing NH 4 OH and O 3 ) ), HOM (liquid containing H 2 SO 4 and O 3 ), and the like.

此外,於上述各實施形態中,對噴嘴8之本體31為柱狀(圓柱狀)的情況進行了說明,但本體也可為筒狀。亦即,也可將處理流體配管(處理液配管33或氣體配管34)及洗淨液配管44插通於筒狀之本體中。 Further, in each of the above embodiments, the case where the main body 31 of the nozzle 8 is columnar (cylindrical) has been described, but the main body may have a cylindrical shape. In other words, the treatment fluid pipe (the treatment liquid pipe 33 or the gas pipe 34) and the cleaning liquid pipe 44 may be inserted into the tubular body.

此外,於上述各實施形態中,對噴嘴8之本體31為外廓圓筒之情況進行了說明,但本體之外周面也可不是圓筒面,而 可藉由以旋轉軸線A0為中心之多角筒面構成。該情況下,於對向構件7之內周面25a、24a與本體31之外周面31a之間形成有大致圓筒狀之筒狀間隙29。同樣地,對向構件7之內周面25a、24a,也可藉由多角筒面所構成,但為了實現旋流R之圓滑之流動,以內周面25a、24a為圓筒面為較佳。 Further, in each of the above embodiments, the case where the main body 31 of the nozzle 8 is an outer cylinder has been described, but the outer peripheral surface of the main body may not be a cylindrical surface. It can be constituted by a polygonal cylinder surface centered on the rotation axis A0. In this case, a substantially cylindrical tubular gap 29 is formed between the inner circumferential surfaces 25a and 24a of the opposing member 7 and the outer circumferential surface 31a of the main body 31. Similarly, the inner circumferential surfaces 25a and 24a of the opposing member 7 may be constituted by a polygonal cylindrical surface. However, in order to realize the smooth flow of the swirling flow R, it is preferable that the inner circumferential surfaces 25a and 24a are cylindrical surfaces.

此外,對連通道57為連通筒狀間隙29與驅動零件收容空間56者的情況進行了說明,但連通道57也可為連通筒狀間隙29與其他之空間者。具體而言,連通道57也可連通筒狀間隙29與艙體4內。 Further, the case where the connecting passage 57 is connected to the cylindrical gap 29 and the driving component accommodating space 56 has been described. However, the connecting passage 57 may be a space that connects the cylindrical gap 29 and other spaces. Specifically, the connecting passage 57 can also communicate with the cylindrical gap 29 and the inside of the cabin 4.

此外,使用於噴嘴8之洗淨之洗淨液,不限於去離子水(DIW)等之水,也可採用洗淨用藥液(例如,SC1(包含NH4OH及H2O2之混合液))。 Further, the washing liquid used for washing the nozzle 8 is not limited to water such as deionized water (DIW), and a washing liquid (for example, SC1 (including a mixture of NH 4 OH and H 2 O 2 ) may be used. )).

此外,於噴嘴洗淨步驟(S6)中,作為使噴嘴8與對向構件7(旋轉軸24)相對旋轉之方法,可一面使對向構件7靜止一面使噴嘴8旋轉,也可使對向構件7及噴嘴8之兩者朝互為相反之方向旋轉。 Further, in the nozzle cleaning step (S6), as a method of relatively rotating the nozzle 8 and the opposing member 7 (rotating shaft 24), the nozzle 8 can be rotated while the opposing member 7 is stationary, and the opposing direction can be made. Both the member 7 and the nozzle 8 rotate in mutually opposite directions.

此外,於上述各實施形態中,作為噴嘴8以設置有處理液配管33(處理流體配管)及中央氣體配管34(處理流體配管)之中心軸噴嘴為例進行了說明,但設置於中心軸噴嘴之處理流體配管,也可包含一或複數之處理液配管,但不包含氣體配管,或者,也可包含一或複數之氣體配管,但不包含處理液配管。 Further, in each of the above-described embodiments, the nozzle 8 is provided with a central axis nozzle in which the processing liquid pipe 33 (treatment fluid pipe) and the central gas pipe 34 (treatment fluid pipe) are provided, but is provided in the center axis nozzle. The treatment fluid pipe may include one or more process liquid pipes, but does not include a gas pipe, or may include one or more gas pipes, but does not include a treatment liquid pipe.

此外,於噴嘴洗淨步驟(S6)中,也可於旋轉軸24及遮斷板23之旋轉的同時,不使旋轉台18旋轉而使其靜止。 Further, in the nozzle cleaning step (S6), the rotation of the rotating shaft 24 and the blocking plate 23 may be performed without rotating the rotating table 18.

此外,於噴嘴洗淨步驟(S6)中,也可停止自周圍氣體 配管41朝筒狀間隙29之惰性氣體之供給。 In addition, in the nozzle cleaning step (S6), the gas from the surrounding gas can also be stopped. The supply of the inert gas of the pipe 41 toward the cylindrical gap 29 is provided.

此外,也可以不同之時序進行筒狀間隙29之洗淨(來自洗淨液吐出口32之洗淨液之吐出)、與噴嘴8之下端部8a之洗淨(來自下面單元11之洗淨液之吹吐)。 Further, the cylindrical gap 29 may be washed at different timings (discharge of the cleaning liquid from the cleaning liquid discharge port 32) and the lower end portion 8a of the nozzle 8 may be washed (from the cleaning unit of the unit 11 below). Blowing).

此外,來自洗淨液吐出口32之洗淨液之吐出方向,不限於斜下方,也可為橫向。於該情況下,如上述實施形態,希望於噴嘴洗淨步驟(S6)中,形成有惰性氣體之下降氣流。 Moreover, the discharge direction of the washing liquid from the washing liquid discharge port 32 is not limited to the obliquely downward direction, and may be a horizontal direction. In this case, as in the above embodiment, it is desirable to form the descending gas flow of the inert gas in the nozzle cleaning step (S6).

此外,也可不將處理流體配管插通於本體31。亦即,本體31也可不是噴嘴8之本體。 Further, the treatment fluid pipe may not be inserted into the body 31. That is, the body 31 may not be the body of the nozzle 8.

此外,洗淨液配管44也可不是包含上下方向配管45及連接上下方向配管45之下端與洗淨液吐出口32之連接配管46之構成,而是將洗淨液配管44彎曲,且將其下游端連接於洗淨液吐出口32之形式。 In addition, the cleaning liquid pipe 44 does not include the vertical pipe 45 and the connection pipe 46 that connects the lower end of the vertical pipe 45 and the cleaning liquid discharge port 32, but bends the cleaning liquid pipe 44 and The downstream end is connected to the form of the cleaning liquid discharge port 32.

此外,洗淨液供給單元,也可利用使洗淨液配管44插通於本體31之內部以外之方法,朝洗淨液吐出口32供給洗淨液。 In addition, the cleaning liquid supply unit may supply the cleaning liquid to the cleaning liquid discharge port 32 by a method other than inserting the cleaning liquid pipe 44 into the inside of the main body 31.

此外,於上述各實施形態中,對基板處理裝置1為處理圓板狀之基板W之裝置之情況進行了說明,但基板處理裝置1,也可為處理液晶顯示裝置用玻璃基板等之多邊形之基板之裝置。 Further, in each of the above-described embodiments, the case where the substrate processing apparatus 1 is a device for processing the disk-shaped substrate W has been described. However, the substrate processing device 1 may be a polygonal substrate for processing a glass substrate for a liquid crystal display device or the like. Substrate device.

雖然對本發明之實施形態詳細地進行了說明,但其等僅僅是為了理解本發明之技術內容而被使用之具體例而已,本發明不應解釋為被限制於此等具體例,本發明之範疇只能藉由附加之申請專利範圍所限制。 Although the embodiments of the present invention have been described in detail, the present invention is not limited to the specific examples and the scope of the present invention. This can only be limited by the scope of the additional patent application.

本申請案係與2016年2月17日向日本國專利廳提出之日本專利特願2016-28311號、及2017年1月25日向日本國專 利廳提出之日本專利特願2017-11643號對應,該等申請案之全部揭示,皆被引用且編入本說明書。 This application is related to the Japanese Patent Special Purpose 2016-28311 submitted to the Japanese Patent Office on February 17, 2016, and the Japanese National Patent on January 25, 2017. Japanese Patent Application No. 2017-11643, the entire disclosure of which is hereby incorporated by reference.

7‧‧‧對向構件 7‧‧‧ opposite components

8‧‧‧噴嘴 8‧‧‧ nozzle

23‧‧‧遮斷板 23‧‧‧ 断板

24‧‧‧旋轉軸 24‧‧‧Rotary axis

24a‧‧‧內周面 24a‧‧‧ inner circumference

25‧‧‧貫通孔 25‧‧‧through holes

25a‧‧‧內周面 25a‧‧‧ inner circumference

29‧‧‧筒狀間隙 29‧‧‧Cylinder gap

30‧‧‧周圍氣體吐出口 30‧‧‧ surrounding gas discharge

31‧‧‧本體 31‧‧‧Ontology

31a‧‧‧外周面 31a‧‧‧Outer surface

32‧‧‧洗淨液吐出口 32‧‧‧Clean liquid discharge

R‧‧‧旋流 R‧‧‧ swirl

Claims (10)

一種基板處理裝置,其包含:基板保持單元,其用於以水平姿勢保持基板;外廓筒狀之本體,其具有外周面、及與上述基板之上面中央部對向之對向部,且朝上下方向延伸;對向構件,其係圍繞於上述本體之外周,具有在與上述本體之上述外周面之間形成筒狀間隙之內周面,且與上述基板之上面對向;洗淨液吐出口,其於上述本體之上述外周面開口,用以朝該本體之徑向外側吐出洗淨液;洗淨液供給單元,其用以朝上述洗淨液吐出口供給洗淨液;旋轉單元,其使上述對向構件及上述本體,繞通過上述基板之上面中央部之旋轉軸線相對旋轉;及洗淨控制單元,其控制上述洗淨液供給單元及上述旋轉單元,洗淨上述筒狀間隙;上述洗淨控制單元係執行旋轉步驟及洗淨液吐出步驟,該旋轉步驟係控制上述旋轉單元而使上述對向構件及上述本體相對旋轉,該洗淨液吐出步驟係與上述旋轉步驟同步,控制上述洗淨液供給單元而自上述洗淨液吐出口吐出洗淨液。 A substrate processing apparatus comprising: a substrate holding unit for holding a substrate in a horizontal posture; and an outer cylindrical body having an outer peripheral surface and an opposite portion facing the upper central portion of the substrate, and facing a vertical member extending around the outer circumference of the body, having an inner peripheral surface formed with a cylindrical gap between the outer peripheral surface of the main body and facing the substrate; the cleaning liquid a discharge port that is opened on the outer peripheral surface of the main body to discharge the cleaning liquid toward the radially outer side of the main body; and a cleaning liquid supply unit for supplying the cleaning liquid to the washing liquid discharge port; And the opposite member and the body are relatively rotated about a rotation axis passing through a central portion of the upper surface of the substrate; and a cleaning control unit that controls the cleaning liquid supply unit and the rotating unit to wash the cylindrical gap The cleaning control unit performs a rotation step and a cleaning liquid discharge step of controlling the rotation unit to relatively rotate the opposite member and the body. The step of cleaning fluid discharge line is synchronized with the rotation step of controlling the cleaning liquid supply means and discharging the cleaning liquid discharge port from said cleaning liquid. 如請求項1之基板處理裝置,其中,上述洗淨液供給單元包含用以供洗淨液流通且插通於上述本體之內部之洗淨液配管,上述洗淨液配管之下游端係在上述本體之上述外周面開口而形成上述洗淨液吐出口。 The substrate processing apparatus according to claim 1, wherein the cleaning liquid supply unit includes a cleaning liquid pipe through which the cleaning liquid flows and is inserted into the main body, and the downstream end of the cleaning liquid pipe is attached to the above The outer peripheral surface of the main body is opened to form the washing liquid discharge port. 如請求項1或2之基板處理裝置,其中,上述洗淨液配管係包含:上下方向配管,其於上下方向直線狀延伸;及連接配管,其連 接上述上下方向配管之下端與上述洗淨液吐出口。 The substrate processing apparatus according to claim 1 or 2, wherein the cleaning liquid piping includes: a vertical pipe, which extends linearly in a vertical direction; and a connecting pipe, which is connected The lower end of the vertical pipe is connected to the washing liquid discharge port. 如請求項1或2之基板處理裝置,其中,上述洗淨液吐出口包含朝斜下方吐出洗淨液之傾斜吐出口。 The substrate processing apparatus according to claim 1 or 2, wherein the cleaning liquid discharge port includes an inclined discharge port for discharging the cleaning liquid obliquely downward. 如請求項1或2之基板處理裝置,其中,進而包含氣體供給單元,其自相較於從該筒狀間隙中之上述洗淨液吐出口吐出洗淨液之位置更靠上方的部位,對上述筒狀間隙供給氣體,上述洗淨控制單元進而執行氣體供給步驟,其控制上述氣體供給單元,與上述旋轉步驟及上述洗淨液吐出步驟同步,朝上述筒狀間隙供給氣體。 The substrate processing apparatus according to claim 1 or 2, further comprising a gas supply unit that is higher than a position above the position at which the cleaning liquid is discharged from the cleaning liquid discharge port in the cylindrical gap, In the cylindrical gap supply gas, the cleaning control unit further performs a gas supply step of controlling the gas supply unit to supply gas to the cylindrical gap in synchronization with the rotation step and the cleaning liquid discharge step. 如請求項1或5之基板處理裝置,其中,進而包含用以使應被供給於基板之上面之處理流體流通且插通於上述本體之內部之處理流體配管,上述處理流體配管之下游端之開口係形成處理流體吐出口。 The substrate processing apparatus according to claim 1 or 5, further comprising a processing fluid pipe for circulating a processing fluid to be supplied to the upper surface of the substrate and inserted into the inside of the body, wherein the downstream end of the processing fluid pipe The opening forms a treatment fluid discharge port. 如請求項1或5之基板處理裝置,其中,進而包含自下方朝上述本體之上述對向部吹吐洗淨液之洗淨液吹吐單元,上述洗淨控制單元進而執行對向部洗淨步驟,其控制上述洗淨液吹吐單元,與上述旋轉步驟及上述洗淨液吐出步驟同步,朝上述對向部吹吐洗淨液而洗淨該對向部。 The substrate processing apparatus according to claim 1 or 5, further comprising a cleaning liquid blowing unit that blows the cleaning liquid from the lower side toward the opposite portion of the main body, wherein the cleaning control unit further performs cleaning of the opposite portion In the step of controlling the cleaning liquid blowing unit, in synchronization with the rotating step and the cleaning liquid discharging step, the cleaning liquid is blown toward the opposing portion to wash the opposing portion. 一種間隙洗淨方法,係用以洗淨被區劃於本體之外周面與對向構件之內周面之間的筒狀間隙者,該本體具有與基板之上面中央部對向之對向部且上下延伸,該對向構件係圍繞於上述本體之外周且與上述基板之上面對向;該間隙洗淨方法係執行以下之步驟:在上述本體之上述外周面開口,準備用以朝上述筒狀間隙吐出洗淨液之洗淨液吐出口之步驟; 使上述對向構件及上述本體相對旋轉之旋轉步驟;及與上述旋轉步驟同步而自上述洗淨液吐出口吐出洗淨液之洗淨液吐出步驟。 A gap cleaning method for cleaning a cylindrical gap partitioned between an outer circumferential surface of the body and an inner circumferential surface of the opposing member, the body having an opposite portion to the upper central portion of the substrate and Extending up and down, the opposing member surrounds the outer circumference of the body and faces the substrate; the gap cleaning method performs the following steps: opening on the outer peripheral surface of the body, preparing to face the tube a step of discharging the washing liquid discharge port of the washing liquid; a rotating step of relatively rotating the opposing member and the body; and a washing liquid discharging step of discharging the washing liquid from the washing liquid discharge port in synchronization with the rotating step. 如請求項8之間隙洗淨方法,其中,進而包含氣體供給步驟,其自相較於從該筒狀間隙中之上述洗淨液吐出口吐出洗淨液之位置更靠上方的部位,對上述筒狀間隙供給氣體。 The gap cleaning method according to claim 8, further comprising a gas supply step of the portion above the position at which the cleaning liquid is discharged from the cleaning liquid discharge port in the cylindrical gap The cylindrical gap supplies gas. 如請求項8或9之間隙洗淨方法,其中,進而包含對向部洗淨步驟,其與上述旋轉步驟及上述洗淨液吐出步驟同步,朝上述對向部吹吐洗淨液而洗淨該對向部。 The gap cleaning method according to claim 8 or 9, further comprising a cleaning step of the opposing portion, which is performed in synchronization with the rotating step and the washing liquid discharging step, and is sprayed with the washing liquid toward the opposing portion. The opposite part.
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