TWI648884B - Substrate for light-emitting element and light-emitting device - Google Patents

Substrate for light-emitting element and light-emitting device Download PDF

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TWI648884B
TWI648884B TW104102415A TW104102415A TWI648884B TW I648884 B TWI648884 B TW I648884B TW 104102415 A TW104102415 A TW 104102415A TW 104102415 A TW104102415 A TW 104102415A TW I648884 B TWI648884 B TW I648884B
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main surface
light
disposed
substrate
emitting element
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TW104102415A
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TW201533935A (en
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中山勝壽
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日商Agc股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/642Heat extraction or cooling elements characterized by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/647Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Abstract

本發明提供一種於側面具有傾斜部或階差部之散熱體所導致之基體之破裂得到抑制之發光元件用基板。本發明之發光元件用基板包括基體、散熱體、第1被覆層、及第2被覆層。基體具有第1主面及配置於其相反側之第2主面。散熱體配置於基體之內部,且具有於基體之厚度方向分割之複數個構成單元。第1被覆層配置於第1主面上,覆蓋配置於第1主面側之散熱體之第2構成單元之上述第1主面側之端面,且其外緣配置於第2構成單元之端面所形成之外緣之外側。第2被覆層配置於散熱體之複數個構成單元之間,覆蓋該等構成單元中之配置於第2主面側之第1構成單元之第1主面側之端面,且外緣配置於第1構成單元之第1主面側之端面所形成之外緣之外側。 The present invention provides a substrate for a light-emitting element in which cracking of a substrate caused by a heat sink having an inclined portion or a step portion on a side surface is suppressed. The substrate for a light-emitting element of the present invention includes a substrate, a heat sink, a first coating layer, and a second coating layer. The base body has a first main surface and a second main surface disposed on the opposite side. The heat sink is disposed inside the base and has a plurality of constituent units divided in the thickness direction of the base. The first coating layer is disposed on the first main surface, and covers an end surface on the first main surface side of the second constituent unit of the heat dissipating body disposed on the first main surface side, and an outer edge thereof is disposed on an end surface of the second constituent unit The outer edge of the outer edge is formed. The second coating layer is disposed between the plurality of constituent units of the heat radiating body, and covers an end surface of the first main surface side of the first constituent unit disposed on the second main surface side of the constituent units, and the outer edge is disposed at the outer edge The end surface on the first main surface side of the constituent unit is formed on the outer side of the outer edge.

Description

發光元件用基板及發光裝置 Substrate for light-emitting element and light-emitting device

本發明係關於一種發光元件用基板及發光裝置。 The present invention relates to a substrate for a light-emitting element and a light-emitting device.

近年來,伴隨發光二極體(LED)元件之高亮度、白色化,於行動電話或大型液晶TV(television,電視)之背光源等中使用LED元件之發光裝置得到使用。關於此種發光裝置,因LED元件之高亮度化,放熱量增加,溫度上升,故未必獲得充分之發光亮度。 In recent years, with the high brightness and whiteness of a light-emitting diode (LED) element, a light-emitting device using an LED element in a backlight of a mobile phone or a large-sized liquid crystal TV (television) has been used. In such a light-emitting device, since the luminance of the LED element is increased, the amount of heat generation is increased and the temperature is increased, so that sufficient luminance of the light is not necessarily obtained.

對此,已知為了抑制發光裝置之溫度上升,以貫通搭載發光元件之基板之方式設置散熱體。又,已知藉由於散熱體之側面設置傾斜部或階差部,而增加散熱體與以基板為主所構成之基體之接觸面積,確保散熱體與基體之接著強度。傾斜部、階差部通常以自搭載發光元件之一主面側朝向對向之另一主面側,(垂直於厚度方向之)剖面面積變大之方式構成。又,作為具有階差部之散熱體,已知2段構造者(例如,參照專利文獻1)。 On the other hand, in order to suppress the temperature rise of the light-emitting device, it is known to provide a heat sink so as to penetrate the substrate on which the light-emitting element is mounted. Further, it is known that the contact area between the heat sink and the substrate mainly composed of the substrate is increased by providing the inclined portion or the step portion on the side surface of the heat sink, and the adhesion strength between the heat sink and the substrate is ensured. The inclined portion and the step portion are generally configured such that the main surface side of one of the light-emitting elements is directed toward the other main surface side opposite to each other, and the cross-sectional area (perpendicular to the thickness direction) is increased. In addition, as a heat sink having a step portion, a two-stage structure is known (for example, refer to Patent Document 1).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2006-093565號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-093565

然而,於在散熱體之側面設置傾斜部或階差部之情形時,因基體與散熱體之熱膨脹率之差異,容易以散熱體之側面為起點,於其周 邊之基體產生破裂。例如,作為散熱體,已知有自搭載發光元件之一主面側起依序配置有剖面面積較小之散熱體、及剖面面積較大之散熱體之2段構造者。於此種情形時,容易以由剖面面積較大之散熱體之上述主面側之表面與側面之交界構成之角部為起點,朝向上述主面側於基體產生厚度方向之破裂。又,於上述主面,容易以散熱體為起點,於其周邊之基體產生面方向之破裂。 However, when the inclined portion or the step portion is provided on the side surface of the heat sink, the difference between the thermal expansion rates of the substrate and the heat sink is easy to start from the side of the heat sink. The base of the edge is broken. For example, as a heat sink, a two-stage structure in which a heat sink having a small cross-sectional area and a heat sink having a large cross-sectional area are disposed in order from one main surface side of the light-emitting element. In such a case, it is easy to cause a crack in the thickness direction toward the base surface from the corner portion formed by the boundary between the surface and the side surface on the main surface side of the heat dissipating body having a large cross-sectional area as the starting point. Further, on the main surface, it is easy to use the heat sink as a starting point, and the base body around the surface is broken in the surface direction.

本發明係為了解決上述問題而成者,其目的在於提供一種由設置於散熱體之側面之傾斜部或階差部所導致之基體之破裂經抑制之發光元件用基板及發光裝置。 In order to solve the above problems, an object of the present invention is to provide a substrate for a light-emitting element and a light-emitting device in which cracking of a substrate caused by an inclined portion or a step portion provided on a side surface of a heat sink is suppressed.

本發明之發光元件用基板具有基體、散熱體、第1被覆層及第2被覆層。基體為板狀,具有搭載發光元件之第1主面、及配置於該第1主面之相反側之第2主面。散熱體配置於基體之內部,第2主面側之端面之面積大於第1主面側之端面之面積,且具有於基體之厚度方向分割之複數個構成單元。第1被覆層配置於第1主面上,覆蓋配置於第1主面側之散熱體之第2構成單元之第1主面側之端面,且第1被覆層之外緣配置於第2構成單元之第1主面側之端面所形成之外緣之外側。第2被覆層配置於散熱體之複數個構成單元之間,覆蓋該等構成單元中之配置於較第2構成單元更靠第2主面側之第1構成單元之第1主面側之端面,且第2被覆層之外緣配置於第1構成單元之第1主面側之端面所形成之外緣之外側。 The substrate for a light-emitting element of the present invention has a substrate, a heat sink, a first coating layer, and a second coating layer. The base body has a plate shape, and has a first main surface on which the light emitting element is mounted and a second main surface disposed on the opposite side of the first main surface. The heat radiating body is disposed inside the base body, and the surface of the end surface on the second main surface side is larger than the area of the end surface on the first main surface side, and has a plurality of constituent units divided in the thickness direction of the base body. The first coating layer is disposed on the first main surface, and covers the end surface on the first main surface side of the second constituent unit of the heat dissipating body disposed on the first main surface side, and the outer edge of the first coating layer is disposed in the second configuration. The end surface on the first main surface side of the unit is formed on the outer side of the outer edge. The second coating layer is disposed between the plurality of constituent units of the heat radiating body, and covers an end surface of the first main surface side of the first constituent unit disposed on the second main surface side of the second constituent unit in the constituent unit The outer edge of the second coating layer is disposed on the outer side of the outer edge formed by the end surface on the first main surface side of the first constituent unit.

本發明之發光裝置具有本發明之發光元件用基板及搭載於該發光元件用基板之發光元件。 The light-emitting device of the present invention includes the light-emitting element substrate of the present invention and a light-emitting element mounted on the light-emitting element substrate.

關於本發明之發光元件用基板,第1被覆層以跨及散熱體及其周邊部之基體之方式設置於搭載發光元件之一主面側,且第2被覆層以 跨及散熱體及其周邊部之基體之方式設置於內部。藉此,即便於在散熱體之側面設置有傾斜部或階差部之情形時,亦抑制以散熱體為起點之基體之破裂。 In the substrate for a light-emitting element of the present invention, the first coating layer is provided on one side of the main surface on which the light-emitting element is mounted so as to extend over the substrate of the heat sink and the peripheral portion thereof, and the second coating layer is The structure is disposed inside the base body of the heat sink and its peripheral portion. Thereby, even when the inclined portion or the step portion is provided on the side surface of the heat sink, the crack of the base body starting from the heat sink is suppressed.

10‧‧‧發光元件用基板 10‧‧‧Substrate for light-emitting components

11‧‧‧基體 11‧‧‧ base

11a‧‧‧基體之第1主面 11a‧‧‧1st main face of the base

11b‧‧‧基體之第2主面 11b‧‧‧2nd main face of the base

12‧‧‧散熱體 12‧‧‧ Heat sink

13‧‧‧第1被覆層 13‧‧‧1st coating

14‧‧‧第2被覆層 14‧‧‧2nd coating

15‧‧‧配線導體 15‧‧‧Wiring conductor

16‧‧‧殼體 16‧‧‧Shell

17、18‧‧‧外部電極 17, 18‧‧‧ External electrodes

20‧‧‧發光裝置 20‧‧‧Lighting device

21‧‧‧發光元件 21‧‧‧Lighting elements

22‧‧‧接合線 22‧‧‧bonding line

23‧‧‧密封層 23‧‧‧ Sealing layer

31‧‧‧第1直線 31‧‧‧1st straight line

32‧‧‧第2直線 32‧‧‧2nd line

111‧‧‧第1基體 111‧‧‧1st matrix

112‧‧‧第2基體 112‧‧‧2nd matrix

121‧‧‧第1構成單元 121‧‧‧1st building block

122‧‧‧第2構成單元 122‧‧‧2nd building block

L1‧‧‧第2構成單元之第1主面側之端面所形成之外緣之各邊與第1被覆層之外緣之各邊的距離 From each side other than L 1 ‧‧‧ constituting the second end surface of the first main surface side of the unit formed by the outside edge of the respective sides of the first edge of the covering layer

L2‧‧‧第1構成單元之第1主面側之端面所形成之外緣之各邊與第2被覆層之外緣之各邊的距離 L 2 ‧‧‧ The distance between each side of the outer edge formed by the end face on the first main surface side of the first constituent unit and the outer edge of the second coating layer

圖1係表示第1實施形態之發光元件用基板之俯視圖。 Fig. 1 is a plan view showing a substrate for a light-emitting element of the first embodiment.

圖2係圖1所表示之發光元件用基板之仰視圖。 Fig. 2 is a bottom view of the substrate for a light-emitting element shown in Fig. 1;

圖3係圖1所表示之發光元件用基板之沿AA線箭頭方向觀察之剖視圖。 Fig. 3 is a cross-sectional view of the substrate for a light-emitting element shown in Fig. 1 as viewed in the direction of arrows AA.

圖4係說明散熱體之側面之角度θ之說明圖。 Fig. 4 is an explanatory view showing the angle θ of the side surface of the heat sink.

圖5係表示散熱體與第1被覆層之位置關係之俯視圖。 Fig. 5 is a plan view showing a positional relationship between a heat radiating body and a first covering layer.

圖6係表示散熱體與第2被覆層之位置關係之俯視圖。 Fig. 6 is a plan view showing a positional relationship between a heat radiating body and a second covering layer.

圖7係表示發光裝置之第1實施形態之俯視圖。 Fig. 7 is a plan view showing a first embodiment of the light-emitting device.

圖8係圖7所表示之發光裝置之沿BB線箭頭方向觀察之剖視圖。 Fig. 8 is a cross-sectional view of the light-emitting device shown in Fig. 7 as viewed in the direction of arrows BB.

圖9係表示第2實施形態之發光元件用基板之俯視圖。 FIG. 9 is a plan view showing a substrate for a light-emitting element of a second embodiment.

圖10係圖9所表示之發光元件用基板之沿CC線箭頭方向觀察之剖視圖。 Fig. 10 is a cross-sectional view of the substrate for a light-emitting element shown in Fig. 9 as seen in the direction of arrows CC.

以下,對發光元件用基板之實施形態進行說明。 Hereinafter, an embodiment of a substrate for a light-emitting element will be described.

圖1係表示發光元件用基板之第1實施形態之俯視圖。圖2係圖1所表示之發光元件用基板之仰視圖。圖3係圖1所表示之發光元件用基板之沿AA線箭頭方向觀察之剖視圖。 Fig. 1 is a plan view showing a first embodiment of a substrate for a light-emitting element. Fig. 2 is a bottom view of the substrate for a light-emitting element shown in Fig. 1; Fig. 3 is a cross-sectional view of the substrate for a light-emitting element shown in Fig. 1 as viewed in the direction of arrows AA.

發光元件用基板10例如係如圖3所示般,具有板狀之基體11。基體11具有搭載發光元件之第1主面11a、及配置於第1主面11a之相反側之第2主面11b。於基體11之內部,設置有包含在基體11之厚度方向分割之2個構成單元111、112之散熱體12。於第1主面11a上設置有第1被覆層13。於散熱體12之各構成單元111、112之間設置有第2被覆層 14。 The light-emitting element substrate 10 has a plate-like base 11 as shown in FIG. 3, for example. The base 11 has a first main surface 11a on which the light-emitting elements are mounted, and a second main surface 11b disposed on the opposite side of the first main surface 11a. Inside the base 11, a heat sink 12 including two constituent units 111 and 112 which are divided in the thickness direction of the base 11 is provided. The first covering layer 13 is provided on the first main surface 11a. A second coating layer is disposed between each of the constituent units 111 and 112 of the heat sink 12 14.

進而,於第1主面11a設置有配線導體15(圖1),且亦可以包圍第1被覆層13及配線導體15之方式設置殼體16。於第2主面11b設置有外部電極17、18。於基體11之內部設置有連接配線導體15與外部電極17之未圖示之貫通導體。 Further, the wiring conductor 15 (FIG. 1) is provided on the first main surface 11a, and the casing 16 may be provided so as to surround the first cladding layer 13 and the wiring conductor 15. External electrodes 17 and 18 are provided on the second main surface 11b. A through conductor (not shown) that connects the wiring conductor 15 and the external electrode 17 is provided inside the base 11.

基體11例如於垂直於厚度方向之剖面具有正方形之剖面形狀。 又,基體11例如自第2主面11b側起依序具有第1基體111、及第2基體112。再者,所謂厚度方向,意指自第1主面11a垂直地朝向第2主面11b之方向。 The base 11 has a square cross-sectional shape, for example, in a cross section perpendicular to the thickness direction. Further, the base 11 has, for example, the first base 111 and the second base 112 in this order from the second main surface 11b side. In addition, the thickness direction means a direction perpendicular to the second main surface 11b from the first main surface 11a.

又,基體11之厚度並無特別限制,通常為0.20mm以上且0.60mm以下。 Further, the thickness of the base 11 is not particularly limited, but is usually 0.20 mm or more and 0.60 mm or less.

第1基體111、第2基體112之厚度較佳為分別為0.10mm以上。於厚度為0.10mm以上之情形時,製造時之生片之處理性變得良好。 又,於厚度為0.10mm以上之情形時,散熱體12容易形成於生片。第1基體111、第2基體112之厚度分別更佳為0.15mm以上。另一方面,第1基體111、第2基體112之厚度分別可設定為0.30mm以下或0.25mm以下。又,於基體11包含第1基體111及第2基體112之情形時,第1基體111之厚度與第2基體112之厚度之比較佳為3:7~7:3之範圍,更佳為4:6~6:4之範圍,尤佳為5:5(即相同厚度)。 The thickness of each of the first base 111 and the second base 112 is preferably 0.10 mm or more. When the thickness is 0.10 mm or more, the rationality of the green sheet at the time of manufacture becomes good. Further, in the case where the thickness is 0.10 mm or more, the heat sink 12 is easily formed on the green sheet. The thickness of each of the first base 111 and the second base 112 is preferably 0.15 mm or more. On the other hand, the thickness of each of the first base 111 and the second base 112 can be set to 0.30 mm or less or 0.25 mm or less. Further, when the base 11 includes the first base 111 and the second base 112, the thickness of the first base 111 and the thickness of the second base 112 are preferably in the range of 3:7 to 7:3, more preferably 4 Range of 6~6:4, especially 5:5 (ie the same thickness).

基體11例如包含無機絕緣材料。作為無機絕緣材料,可列舉氧化鋁、氮化鋁、玻璃陶瓷等。玻璃陶瓷為包含玻璃粉末及陶瓷粉末之玻璃陶瓷組合物之燒結體,可列舉低溫共燒陶瓷(LTCC)等。 The base 11 contains, for example, an inorganic insulating material. Examples of the inorganic insulating material include alumina, aluminum nitride, and glass ceramics. The glass ceramic is a sintered body of a glass ceramic composition containing a glass powder and a ceramic powder, and examples thereof include low temperature co-fired ceramics (LTCC).

氮化鋁之熱導率為200W/(m.K)左右,氧化鋁之熱導率為20W/(m.K)左右,玻璃陶瓷之熱導率為4W/(m.K)左右。氧化鋁、玻璃陶瓷之熱導率大幅低於氮化鋁之熱導率。因此,於無機絕緣材料為氧化鋁、玻璃陶瓷之情形時,設置散熱體12之效果較大。 The thermal conductivity of aluminum nitride is about 200 W/(m.K), the thermal conductivity of alumina is about 20 W/(m.K), and the thermal conductivity of glass ceramic is about 4 W/(m.K). The thermal conductivity of alumina and glass ceramics is much lower than that of aluminum nitride. Therefore, when the inorganic insulating material is alumina or glass ceramic, the effect of providing the heat sink 12 is large.

該等之中,就焙燒溫度較低而言,較佳為玻璃陶瓷。例如於發光元件用基板10,為了提高光之反射率,有於基體11之第1主面11a側形成銀反射膜之情形。玻璃陶瓷由於其焙燒溫度較低,故可於玻璃陶瓷焙燒之同時亦焙燒銀反射膜。又,就玻璃陶瓷與氧化鋁相比加工性良好之觀點而言,作為無機絕緣材料,亦尤佳為玻璃陶瓷。 Among these, glass ceramics are preferred insofar as the baking temperature is low. For example, in the substrate 10 for a light-emitting element, a silver reflective film is formed on the first main surface 11a side of the substrate 11 in order to increase the reflectance of light. Since the glass ceramic has a low calcination temperature, the glass reflective film can be fired at the same time as the glass ceramic is fired. Further, from the viewpoint that the glass ceramics have better workability than alumina, the inorganic insulating material is also preferably a glass ceramic.

例如,如圖3所示,散熱體12以於厚度方向延伸之方式設置於基體11之內部。通常,散熱體12於垂直於厚度方向之剖面具有正方形之剖面形狀。並且,散熱體12之第2主面11b側之端面之面積大於散熱體12之第1主面11a側之端面之面積。於第2主面11b側之面積大於第1主面11a側之面積之情形時,發光元件之熱自第1主面11a側傳遞至第2主面11b側時,亦於面方向(與厚度方向正交之平面方向)上傳遞,散熱性變得良好。又,散熱體12之厚度方向上之任意位置之剖面之面積較佳為與較該剖面位於更靠第1主面11a側之剖面之面積相同,或較其更大。再者,本說明書中只要無特別說明,則所謂「剖面面積」、「剖面之面積」,意指垂直於厚度方向之剖面之面積,所謂「剖面形狀」,意指垂直於厚度方向之剖面之形狀。 For example, as shown in FIG. 3, the heat sink 12 is provided inside the base 11 so as to extend in the thickness direction. Generally, the heat radiating body 12 has a square cross-sectional shape in a cross section perpendicular to the thickness direction. Further, the area of the end surface on the second main surface 11b side of the heat radiating body 12 is larger than the area of the end surface on the first main surface 11a side of the heat radiating body 12. When the area on the side of the second main surface 11b is larger than the area on the side of the first main surface 11a, when the heat of the light-emitting element is transmitted from the first main surface 11a side to the second main surface 11b side, the surface direction (and thickness) When the direction is orthogonal to the plane direction, the heat dissipation is improved. Further, the area of the cross section at any position in the thickness direction of the heat radiating body 12 is preferably the same as or larger than the area of the cross section located closer to the first main surface 11a than the cross section. In addition, in this specification, unless otherwise indicated, the "sectional area" and the "area of the cross-section" mean the area of the cross section perpendicular to the thickness direction, and the "cross-sectional shape" means the cross section perpendicular to the thickness direction. shape.

關於散熱體12之第1主面11a側之端面之面積,就使散熱性良好之觀點而言,較佳為0.20mm2以上,更佳為0.25mm2以上。另一方面,散熱體12之第1主面11a側之端面之面積較佳為0.60mm2以下,更佳為0.55mm2以下。 The area of the end surface on the first main surface 11a side of the heat sink 12 is preferably 0.20 mm 2 or more, and more preferably 0.25 mm 2 or more from the viewpoint of improving heat dissipation. On the other hand, the area of the radiator 12 of the side end surface 11a of the first main surface is preferably 0.60mm 2 or less, more preferably 0.55mm 2 or less.

又,散熱體12之第1主面11a側之端面之面積較佳為小於發光元件之搭載面之面積(以下稱為「發光元件之面積」),即發光元件用基板中搭載發光元件之搭載部之面積。如下所述,第1被覆層13之外緣設置於散熱體12之第1主面11a側之端面所形成之外緣之外側。於該情形時,若散熱體12之第1主面11a側之端面面積大於發光元件之面積,則於俯視(自第1主面11a側觀察時)下,第1被覆層13必然會自發光元件 伸出。於有伸出部分之情形時,若於該部分形成吸收光之層,則有由於發光元件之光被吸收,故光利用效率降低之虞。因此,為了不使發光元件之光被吸收,較佳為散熱體12之第1主面11a側之端面之面積小於發光元件之面積。 In addition, the area of the end surface on the first main surface 11a side of the heat radiating body 12 is preferably smaller than the area of the mounting surface of the light emitting element (hereinafter referred to as the "area of the light emitting element"), that is, the mounting of the light emitting element in the substrate for the light emitting element. The area of the department. As described below, the outer edge of the first covering layer 13 is provided on the outer side of the outer edge formed on the end surface of the heat radiating body 12 on the first main surface 11a side. In this case, when the end surface area of the heat radiating body 12 on the first main surface 11a side is larger than the area of the light emitting element, the first covering layer 13 is inevitably self-illuminating in plan view (when viewed from the first main surface 11a side). element Extend. In the case where there is a protruding portion, if a layer that absorbs light is formed in this portion, light of the light-emitting element is absorbed, so that the light use efficiency is lowered. Therefore, in order not to absorb the light of the light-emitting element, it is preferable that the area of the end surface on the first main surface 11a side of the heat sink 12 is smaller than the area of the light-emitting element.

散熱體12例如於側面具有階差部,自第1主面11a側朝向第2主面11b側,剖面面積階段性地變大。又,例如如圖3所示,散熱體12包含由垂直於厚度方向之平面所分割之複數個構成單元,自第2主面11b側起依序具有第1構成單元121、及第2構成單元122。第1構成單元121之剖面面積大於第2構成單元122之剖面面積。第1構成單元121之厚度通常與第1基體111之厚度大致相同。同樣地,第2構成單元122之厚度通常與第2基體112之厚度大致相同。 The heat radiating body 12 has a stepped portion on the side surface, for example, and the cross-sectional area is gradually increased from the first main surface 11a side toward the second main surface 11b side. Further, for example, as shown in FIG. 3, the heat sink 12 includes a plurality of constituent units divided by a plane perpendicular to the thickness direction, and has the first constituent unit 121 and the second constituent unit in this order from the second main surface 11b side. 122. The cross-sectional area of the first constituent unit 121 is larger than the cross-sectional area of the second constituent unit 122. The thickness of the first constituent unit 121 is generally substantially the same as the thickness of the first base 111. Similarly, the thickness of the second constituent unit 122 is generally substantially the same as the thickness of the second base 112.

又,散熱體12之體積(V2)相對於基體11及配置於其內部之構件之合計體積(V1)的比率(V2/V1)較佳為10體積%以上。再者,作為上述構件,可列舉散熱體12、第2被覆層14、及(未圖示之)貫通導體。於比率(V2/V1)為10體積%以上之情形時,散熱體12之體積充分大,故散熱性變得良好。 Moreover, the ratio (V 2 /V 1 ) of the volume (V 2 ) of the heat radiating body 12 to the total volume (V 1 ) of the base 11 and the member disposed therein is preferably 10% by volume or more. Further, examples of the member include the heat sink 12, the second covering layer 14, and a through conductor (not shown). When the ratio (V 2 /V 1 ) is 10% by volume or more, the volume of the heat sink 12 is sufficiently large, so that heat dissipation is improved.

再者,若比率(V2/V1)成為10體積%以上,則於未設置第1被覆層13及第2被覆層14之先前之構成中,變得容易產生基體11以散熱體12為起點之破裂。於實施形態之發光元件用基板中,由於設為具有上述被覆層之構成,故即便比率(V2/V1)為10體積%以上,亦可抑制破裂之產生,且獲得良好之散熱性。 In addition, when the ratio (V 2 /V 1 ) is 10% by volume or more, in the prior configuration in which the first covering layer 13 and the second covering layer 14 are not provided, the base body 11 is easily formed with the heat radiating body 12 as The break of the starting point. In the substrate for a light-emitting element of the embodiment, since the coating layer is provided, even if the ratio (V 2 /V 1 ) is 10% by volume or more, the occurrence of cracking can be suppressed, and good heat dissipation can be obtained.

散熱體12之比率(V2/V1)更佳為15體積%以上。另一方面,比率(V2/V1)較佳為30體積%以下。於比率(V2/V1)超過30體積%之情形時,體積(V1)相對減少,基體11之強度相對降低,即便設置有第1被覆層13及第2被覆層14,亦有產生基體11以散熱體12為起點之破裂之虞。又,比率(V2/V1)更佳為25體積%以下。 The ratio (V 2 /V 1 ) of the heat radiating body 12 is more preferably 15% by volume or more. On the other hand, the ratio (V 2 /V 1 ) is preferably 30% by volume or less. When the ratio (V 2 /V 1 ) exceeds 30% by volume, the volume (V 1 ) is relatively decreased, and the strength of the substrate 11 is relatively lowered, even if the first coating layer 13 and the second coating layer 14 are provided. The base body 11 is broken by the heat sink 12 as a starting point. Further, the ratio (V 2 /V 1 ) is more preferably 25% by volume or less.

圖4係說明散熱體12之側面之角度θ之說明圖。於散熱體12於側面具有階差部之情形時,角度θ係於基體11之厚度方向上延伸之第1直線31與通過由各構成單元121、122中之第2主面11b側之端面與側面之交界所構成之角部之第2直線32所形成的角度。角度θ較佳為20°以上。 於角度θ為20°以上之情形時,第2主面11b側之端面之面積充分大於第1主面11a側之端面之面積,故散熱性變得良好。角度θ更佳為30°以上。另一方面,就散熱性之觀點而言,角度θ若為70°左右則足夠。角度θ更佳為60°以下。通常,角度θ尤佳為45°左右。 4 is an explanatory view for explaining an angle θ of a side surface of the heat sink 12. When the heat sink 12 has a stepped portion on the side surface, the angle θ is the first straight line 31 extending in the thickness direction of the base 11 and the end surface passing through the second main surface 11b side of each of the constituent units 121 and 122. The angle formed by the second straight line 32 of the corner formed by the boundary between the side faces. The angle θ is preferably 20° or more. When the angle θ is 20° or more, the area of the end surface on the second main surface 11b side is sufficiently larger than the area of the end surface on the first main surface 11a side, so that heat dissipation is improved. The angle θ is more preferably 30° or more. On the other hand, from the viewpoint of heat dissipation, it is sufficient that the angle θ is about 70°. The angle θ is more preferably 60° or less. Generally, the angle θ is particularly preferably about 45°.

又,關於散熱體12,其剖面形狀之2個側面所構成之角部之曲率半徑較佳為0.03mm以上。即,於散熱體12之垂直於厚度方向之剖面為正方形之情形時,較佳為存在於該正方形之四個角之角部之曲率半徑均為0.03mm以上。於曲率半徑為0.03mm以上之情形時,基體11以角部之頂點為起點之破裂得到抑制。曲率半徑更佳為0.05mm以上。 另一方面,若曲率半徑變得過大,則散熱體12之剖面形狀接近圓形,故與基體11之剖面形狀(外緣)之形狀之差異變大,反而變得容易產生基體11之破裂。因此,曲率半徑較佳為0.40mm以下,更佳為0.35mm以下。 Further, in the heat radiating body 12, the radius of curvature of the corner portion formed by the two side faces of the cross-sectional shape is preferably 0.03 mm or more. That is, in the case where the cross section perpendicular to the thickness direction of the heat radiating body 12 is a square, it is preferable that the corners of the corners of the four corners of the square have a curvature radius of 0.03 mm or more. When the radius of curvature is 0.03 mm or more, the crack of the base 11 starting from the apex of the corner is suppressed. The radius of curvature is more preferably 0.05 mm or more. On the other hand, when the radius of curvature is too large, the cross-sectional shape of the heat sink 12 is nearly circular, so that the difference from the shape of the cross-sectional shape (outer edge) of the base 11 becomes large, and the crack of the base 11 is likely to occur. Therefore, the radius of curvature is preferably 0.40 mm or less, more preferably 0.35 mm or less.

散熱體12之構成材料較佳為導熱性較高之金屬材料。作為此種金屬材料,可列舉以銅、銀、金等為主成分之金屬。具體而言,較佳為銀、包含銀與鉑、或包含銀與鈀之金屬。此處,本說明書中,所謂以某種成分作為構成材料之主成分,意指含有相對於構成材料總量超過50質量%之該成分。再者,第1構成單元121之構成材料與第2構成單元122之構成材料可相同,亦可不同。再者,於基體11之構成材料為玻璃陶瓷以外之情形時,就抑制焙燒時之變形等之觀點而言,散熱體12之構成材料較佳為鎢、鉬等高熔點金屬。 The constituent material of the heat sink 12 is preferably a metal material having a high thermal conductivity. Examples of such a metal material include metals containing copper, silver, gold, and the like as a main component. Specifically, silver, silver or platinum, or a metal containing silver and palladium is preferred. In the present specification, the term "a component as a main component of a constituent material" means that the component is contained in an amount of more than 50% by mass based on the total amount of the constituent materials. Further, the constituent material of the first constituent unit 121 and the constituent material of the second constituent unit 122 may be the same or different. In the case where the constituent material of the substrate 11 is other than the glass ceramic, the constituent material of the heat sink 12 is preferably a high melting point metal such as tungsten or molybdenum, from the viewpoint of suppressing deformation during firing or the like.

第1被覆層13配置於基體11之第1主面11a側之表面。第1被覆層13 例如配合具有正方形之剖面形狀之第2構成單元122,具有正方形之剖面形狀。第1被覆層13覆蓋第2構成單元122之第1主面11a側之端面,且第1被覆層之外緣配置於第2構成單元122之第1主面11a側之端面所形成之外緣之外側。藉由將第1被覆層13之外緣配置於第2構成單元122之第1主面11a側之端面所形成之外緣之外側,第2構成單元122之周邊部之基體11(第2基體112)由第1被覆層13被覆。藉此,抑制以第2構成單元122為起點之基體11之面方向之破裂。 The first coating layer 13 is disposed on the surface of the base 11 on the side of the first main surface 11a. First covering layer 13 For example, the second constituent unit 122 having a square cross-sectional shape has a square cross-sectional shape. The first coating layer 13 covers the end surface on the first main surface 11a side of the second structural unit 122, and the outer edge of the first coating layer is disposed on the outer edge of the end surface on the first main surface 11a side of the second structural unit 122. Outside. The base 11 (the second substrate) of the peripheral portion of the second constituent unit 122 is disposed on the outer side of the outer edge of the second constituent layer 122 on the first main surface 11a side. 112) is covered by the first covering layer 13. Thereby, the crack in the surface direction of the base 11 starting from the second constituent unit 122 is suppressed.

圖5係表示第2構成單元122與第1被覆層13之位置關係之俯視圖。第2構成單元122之第1主面11a側之端面之外緣之(正方形之)各邊與第1被覆層13之外緣之(正方形之)各邊的距離L1較佳為分別為0.03mm以上。於距離L1為0.03mm以上之情形時,第2構成單元122之周邊部之基體11(第2基體112)由第1被覆層13充分地被覆。藉此,進一步抑制以第2構成單元122為起點之基體11之面方向之破裂。距離L1更佳為0.05mm以上。另一方面,若距離L1變得過大,則有第1被覆層13自發光元件(之搭載部)伸出之虞。若有伸出部分,則有如上所述於該部分發光元件之光被吸收之虞。因此,為了不使發光元件之光被吸收,距離L1較佳為0.30mm以下,更佳為0.25mm以下。 FIG. 5 is a plan view showing the positional relationship between the second constituent unit 122 and the first covering layer 13. The distance L 1 between each side (square) of the outer edge of the end surface on the first main surface 11a side of the second constituent unit 122 and each side (square) of the outer edge of the first cladding layer 13 is preferably 0.03, respectively. Mm or more. When the distance L 1 is 0.03 mm or more, the base 11 (second base 112 ) of the peripheral portion of the second constituent unit 122 is sufficiently covered by the first covering layer 13 . Thereby, the crack in the surface direction of the base 11 starting from the second constituent unit 122 is further suppressed. The distance L 1 is more preferably 0.05 mm or more. On the other hand, when the distance L 1 is excessively large, the first covering layer 13 protrudes from the light-emitting element (the mounting portion). If there is an extended portion, there is a flaw in which light of the portion of the light-emitting element is absorbed as described above. Therefore, in order not to absorb the light of the light-emitting element, the distance L 1 is preferably 0.30 mm or less, more preferably 0.25 mm or less.

若如此考慮發光元件之搭載部與第2構成單元122之關係,則較佳為第2構成單元122之第1主面11a側之端面之面積小於光學元件之搭載部之面積,第2構成單元122之第1主面11a側之端面所形成之外緣不與發光元件之搭載部之外緣重疊而位於內側。再者,圖5之例中,將第1被覆層13之外緣表示為正方形,但只要距第2構成單元122之外緣之距離L1滿足如上所述之特定範圍,則第1被覆層13之外緣並不特別限定於正方形,可應用任意之形狀。 In consideration of the relationship between the mounting portion of the light-emitting element and the second constituent unit 122, the area of the end surface on the first main surface 11a side of the second constituent unit 122 is preferably smaller than the area of the mounting portion of the optical element, and the second constituent unit The outer edge formed by the end surface on the first main surface 11a side of the 122 is not overlapped with the outer edge of the mounting portion of the light-emitting element, and is located inside. In the example of FIG. 5, the outer edge of the first covering layer 13 is represented as a square, but the first coating layer is provided as long as the distance L 1 from the outer edge of the second constituent unit 122 satisfies the specific range as described above. The outer edge of 13 is not particularly limited to a square, and any shape can be applied.

於第1被覆層13之面積大於發光元件之面積,有自發光元件伸出之部分之情形時,若於該部分形成吸收光之層,則有發光元件之光被 吸收,光利用效率降低之虞。因此,為了不使發光元件之光被吸收,較佳為第1被覆層13之面積與發光元件之面積相同,或較其小,(俯視下之)第1被覆層13之外緣與發光元件之搭載部之外緣相同,或位於較其更內側。再者,此處,所謂「內側」,解釋為不限於第1被覆層13之外緣不與發光元件之搭載部之外緣重疊而位於內側之情形,亦包含第1被覆層13之外緣之一部分與發光元件之搭載部之外緣之一部分重疊而位於內側之情形。 When the area of the first covering layer 13 is larger than the area of the light-emitting element and there is a portion where the self-emitting element protrudes, if a layer that absorbs light is formed in the portion, the light of the light-emitting element is Absorption, the efficiency of light utilization is reduced. Therefore, in order not to absorb the light of the light-emitting element, it is preferable that the area of the first covering layer 13 is the same as or smaller than the area of the light-emitting element, and the outer edge of the first covering layer 13 and the light-emitting element (in plan view) The outer edge of the mounting portion is the same or is located further inside. Here, the term "inside" is not limited to the case where the outer edge of the first covering layer 13 is not overlapped with the outer edge of the mounting portion of the light-emitting element and is located inside, and the outer edge of the first covering layer 13 is also included. Some of them overlap with one of the outer edges of the mounting portion of the light-emitting element and are located inside.

再者,作為上述吸收光之層,可列舉為了抑制第1被覆層13之腐蝕,通常於第1被覆層13之表面上以覆蓋其整體之方式形成之保護層。作為保護層,可列舉自第1被覆層13之表面側起依序積層具有鍍鎳(Ni)層、鍍金(Au)層之鍍Ni/Au層而成之鍍金屬層等。 In addition, as the layer for absorbing light, a protective layer which is formed so as to cover the entire surface of the first covering layer 13 in order to suppress corrosion of the first covering layer 13 is exemplified. As the protective layer, a metal plating layer having a nickel-plated (Ni) layer or a gold-plated (Au) layer-plated Ni/Au layer is sequentially laminated from the surface side of the first coating layer 13.

關於第1被覆層13之厚度,就抑制由第2構成單元122所導致之基體11之破裂之觀點而言,較佳為5μm以上,更佳為10μm以上。又,關於第1被覆層13之厚度,就減小由其熱膨脹所導致之對基體11之影響之觀點而言,較佳為20μm以下,更佳為15μm以下。 The thickness of the first coating layer 13 is preferably 5 μm or more, and more preferably 10 μm or more from the viewpoint of suppressing cracking of the substrate 11 caused by the second constituent unit 122. Further, the thickness of the first covering layer 13 is preferably 20 μm or less, and more preferably 15 μm or less from the viewpoint of reducing the influence on the substrate 11 caused by thermal expansion.

作為第1被覆層13之構成材料,可列舉金屬材料、樹脂材料等,就抑制基體11之破裂之效果較高,且導熱性較高之觀點而言,較佳為金屬材料。作為此種金屬材料,可列舉以銅、銀、金等為主成分之金屬。具體而言,較佳為銀、包含銀與鉑、或包含銀與鈀之金屬。再者,於基體11之構成材料為玻璃陶瓷以外之情形時,就抑制焙燒時之變形等之觀點而言,較佳為鎢、鉬等高熔點金屬。第1被覆層13較佳為具有包含該等金屬材料之緻密之構造者。藉由具有緻密之構造者,抑制基體11之破裂之效果較大。緻密之構造係藉由焙燒條件之調整進行製造。又,作為樹脂材料,可列舉丙烯酸系樹脂、環氧樹脂、矽酮樹脂等。 The constituent material of the first coating layer 13 is, for example, a metal material or a resin material, and is preferably a metal material from the viewpoint of suppressing the cracking of the base 11 and having high heat conductivity. Examples of such a metal material include metals containing copper, silver, gold, and the like as a main component. Specifically, silver, silver or platinum, or a metal containing silver and palladium is preferred. In addition, when the constituent material of the base 11 is other than glass ceramics, a high melting point metal such as tungsten or molybdenum is preferable from the viewpoint of suppressing deformation during baking and the like. The first covering layer 13 preferably has a dense structure including the metal materials. By having a dense structure, the effect of suppressing the crack of the base 11 is large. The dense structure is manufactured by adjustment of the firing conditions. Further, examples of the resin material include an acrylic resin, an epoxy resin, and an anthrone resin.

第2被覆層14配置於基體11之內部,第1構成單元121與第2構成單 元122之間。第2被覆層14配合具有正方形之剖面形狀之散熱體12,例如具有正方形之剖面形狀。第2被覆層14覆蓋配置於其第2主面11b側之第1構成單元121之第1主面11a側之端面。又,第2被覆層14之外緣配置於該第1構成單元121之第1主面11a側之端面所形成之外緣之外側。 The second coating layer 14 is disposed inside the base 11, and the first constituent unit 121 and the second constituent sheet Between the levels 122. The second covering layer 14 is fitted with a heat radiating body 12 having a square cross-sectional shape, for example, having a square cross-sectional shape. The second coating layer 14 covers the end surface on the first main surface 11a side of the first constituent unit 121 disposed on the second main surface 11b side. Moreover, the outer edge of the second covering layer 14 is disposed on the outer side of the outer edge formed on the end surface of the first main surface 11a of the first structural unit 121.

藉由將第2被覆層14之外緣配置於第1構成單元121之第1主面11a側之端面所形成之外緣之外側,第1構成單元121之周邊部之基體11(第1基體111)由第2被覆層14被覆。藉此,抑制以由第1構成單元121之第1主面11a側之端面與側面之交界構成之角部為起點的朝向第1主面11a側之基體11(第2基體112)之厚度方向之破裂。 The base 11 (the first substrate) of the peripheral portion of the first constituent unit 121 is formed on the outer side of the outer edge of the first constituent surface 121 on the outer surface of the first constituent surface 121. 111) is covered by the second covering layer 14. In this manner, the thickness direction of the base 11 (second base 112) facing the first main surface 11a from the corner formed by the boundary between the end surface on the first main surface 11a side of the first constituent unit 121 and the side surface is suppressed. The rupture.

圖6係表示第1構成單元121與第2被覆層14之位置關係之俯視圖。第1構成單元121之第1主面11a側之端面所形成之外緣之(正方形之)各邊與第2被覆層14之外緣之(正方形之)各邊的距離L2較佳為分別為0.05mm以上。於距離L2為0.05mm以上之情形時,第1構成單元121及其周邊部之基體11(第1基體111)由第2被覆層14充分地被覆。藉此,進一步抑制以第1構成單元121之第1主面11a側之角部為起點的基體11(第2基體112)之厚度方向之破裂。距離L2更佳為0.10mm以上。另一方面,若距離L2變大,則第1基體111與第2基體112變得容易剝離。 就抑制此種剝離之觀點而言,距離L2較佳為0.35mm以下,更佳為0.30mm以下。 FIG. 6 is a plan view showing a positional relationship between the first constituent unit 121 and the second covering layer 14. The distance L 2 between the (square) side of the outer edge formed by the end surface on the first main surface 11a side of the first constituent unit 121 and the (square) side of the outer edge of the second cladding layer 14 is preferably respectively It is 0.05 mm or more. When the distance L 2 is 0.05 mm or more, the first constituent unit 121 and the base 11 (the first base 111) of the peripheral portion thereof are sufficiently covered by the second covering layer 14 . Thereby, cracking in the thickness direction of the base 11 (second base 112) starting from the corner portion on the first main surface 11a side of the first constituent unit 121 is further suppressed. The distance L 2 is more preferably 0.10 mm or more. On the other hand, when the distance L 2 is increased, the first base body 111 and the second base body 112 are easily peeled off. From the viewpoint of suppressing such peeling, the distance L 2 is preferably 0.35 mm or less, more preferably 0.30 mm or less.

再者,圖6之例中,將第2被覆層14之外緣表示為正方形,但只要距第1構成單元121之第1主面11a側之端面所形成之外緣的距離L2滿足如上所述之特定範圍,則第2被覆層14之外緣並不特別限定於正方形,可應用任意形狀。再者,第1構成單元121之剖面面積並無特別限定,大於光學元件之搭載部之面積者由於可提高散熱效果,故而較佳。 In the example of FIG. 6, the outer edge of the second covering layer 14 is shown as a square, but the distance L 2 from the outer edge formed by the end surface on the first main surface 11a side of the first constituent unit 121 satisfies the above. In the specific range described above, the outer edge of the second coating layer 14 is not particularly limited to a square shape, and any shape may be applied. Further, the cross-sectional area of the first constituent unit 121 is not particularly limited, and is larger than the area of the mounting portion of the optical element because it can improve the heat dissipation effect.

關於第2被覆層14之厚度,可與對第1被覆層13說明之內容相同。 The thickness of the second covering layer 14 can be the same as that described for the first covering layer 13.

作為第2被覆層14之構成材料,可與對第1被覆層13說明之內容相同。 The constituent material of the second covering layer 14 can be the same as that described for the first covering layer 13.

又,關於殼體16、配線導體15、外部電極17、18、未圖示之貫通導體,其形狀等並無限制,可視需要選擇形狀等。 In addition, the shape of the casing 16, the wiring conductor 15, the external electrodes 17, 18, and the through conductor (not shown) is not limited, and a shape or the like may be selected as needed.

關於殼體16之構成材料,就生產性等之觀點而言,較佳為與基體11之構成材料相同之材料。作為此種材料,較佳為氧化鋁、氮化鋁、玻璃陶瓷等,更佳為氧化鋁、玻璃陶瓷,例如尤佳為低溫共燒陶瓷(LTCC)等玻璃陶瓷。 The constituent material of the casing 16 is preferably the same material as the constituent material of the base 11 from the viewpoint of productivity and the like. As such a material, alumina, aluminum nitride, glass ceramics or the like is preferable, and alumina or glass ceramic is more preferable. For example, a glass ceramic such as a low temperature co-fired ceramic (LTCC) is preferable.

關於配線導體15、外部電極17、18、貫通導體之構成材料,較佳為與散熱體12、第1被覆層13、第2被覆層14之構成材料相同之金屬材料。作為此種金屬材料,可列舉以銅、銀、金等為主成分之金屬。 具體而言,較佳為銀、包含銀與鉑、或包含銀與鈀之金屬。再者,於基體11之構成材料為玻璃陶瓷以外之情形時,就抑制焙燒時之變形等之觀點而言,較佳為鎢、鉬等高熔點金屬。 The constituent materials of the wiring conductor 15, the external electrodes 17, 18, and the through conductor are preferably the same metal materials as those of the heat sink 12, the first covering layer 13, and the second covering layer 14. Examples of such a metal material include metals containing copper, silver, gold, and the like as a main component. Specifically, silver, silver or platinum, or a metal containing silver and palladium is preferred. In addition, when the constituent material of the base 11 is other than glass ceramics, a high melting point metal such as tungsten or molybdenum is preferable from the viewpoint of suppressing deformation during baking and the like.

以上,對實施形態之發光元件用基板,就散熱體12以於側面具有階差部之方式包含2個構成單元之例進行了說明。此種發光元件用基板並不限定於散熱體具有2個構成單元者。散熱體12之構成單元亦可為3個以上。即,關於實施形態之發光元件用基板,散熱體12之剖面可為3段以上之階梯狀之構成。於該情形時,第2被覆層14只要配置於2個以上構成單元間之至少1個構成單元間即可。於該情形時,第1構成單元可自除距第1主面11a側最近之第2構成單元以外之複數個構成單元之中任意地決定。關於實施形態之發光元件用基板,於散熱體12之剖面為3段以上之階梯狀之構成之情形時,較佳為第2被覆層14配置於除第2構成單元以外之2個以上構成單元全部之構成單元間。 In the above, the substrate for a light-emitting element of the embodiment has been described as an example in which the heat sink 12 includes two constituent units so as to have a step portion on the side surface. Such a substrate for a light-emitting element is not limited to a case where the heat sink has two constituent units. The number of constituent elements of the heat sink 12 may be three or more. In other words, in the substrate for a light-emitting element of the embodiment, the cross section of the heat sink 12 may have a stepped shape of three or more stages. In this case, the second coating layer 14 may be disposed between at least one constituent unit between two or more constituent units. In this case, the first constituent unit can be arbitrarily determined from a plurality of constituent units other than the second constituent unit closest to the first main surface 11a side. In the case of the substrate for a light-emitting element of the embodiment, when the cross-section of the heat sink 12 has a stepped shape of three or more stages, it is preferable that the second cladding layer 14 is disposed in two or more constituent units other than the second constituent unit. All constitute a unit.

其次,對發光裝置之實施形態進行說明。 Next, an embodiment of a light-emitting device will be described.

圖7係表示發光裝置之第1實施形態之俯視圖。又,圖8係圖7所表示之發光裝置之沿BB線箭頭方向觀察之剖視圖。 Fig. 7 is a plan view showing a first embodiment of the light-emitting device. 8 is a cross-sectional view of the light-emitting device shown in FIG. 7 as viewed in the direction of the arrow BB.

發光裝置20具有第1實施形態之發光元件用基板10。於發光元件用基板10,於第1被覆層13上搭載有發光元件21。發光元件21為一線型(one wire type)之發光元件,於兩主面具有電極。發光元件21之一電極藉由接合線22與配線導體15電性連接。發光元件21之另一電極與第1被覆層13電性連接。再者,於該情形時,散熱體12除作為散熱部之功能外,具有作為導電部之功能。 The light-emitting device 20 has the light-emitting element substrate 10 of the first embodiment. The light-emitting element 21 is mounted on the first cladding layer 13 on the substrate 10 for a light-emitting element. The light-emitting element 21 is a one-wire type light-emitting element having electrodes on both main faces. One of the electrodes of the light-emitting element 21 is electrically connected to the wiring conductor 15 by a bonding wire 22. The other electrode of the light-emitting element 21 is electrically connected to the first cladding layer 13. Further, in this case, the heat sink 12 functions as a conductive portion in addition to the function as a heat radiating portion.

於殼體16之內部,以覆蓋發光元件21等之方式設置密封層23。 作為密封層23之構成材料,可並無特別限制地使用通常用於發光裝置之密封材料之矽酮樹脂、環氧樹脂等密封材料。 Inside the casing 16, a sealing layer 23 is provided to cover the light-emitting element 21 and the like. As a constituent material of the sealing layer 23, a sealing material such as an fluorenone resin or an epoxy resin which is generally used for a sealing material for a light-emitting device can be used without particular limitation.

其次,對發光元件用基板之第2實施形態進行說明。 Next, a second embodiment of the substrate for a light-emitting element will be described.

圖9係表示第2實施形態之發光元件用基板之俯視圖。又,圖10係圖9所表示之發光元件用基板之沿CC線箭頭方向觀察之剖視圖。於第1實施形態之發光元件用基板中,散熱體12為於側面具有階差部者,與此相對,於第2實施形態之發光元件用基板中,散熱體12於側面具有傾斜部,於該方面不同。除此以外,與第1實施形態之發光元件用基板相同。以下,對第2實施形態之發光元件用基板,以與第1實施形態之發光元件用基板不同之散熱體12為主進行說明。 FIG. 9 is a plan view showing a substrate for a light-emitting element of a second embodiment. Moreover, FIG. 10 is a cross-sectional view of the substrate for a light-emitting element shown in FIG. 9 as viewed in the direction of arrows CC. In the substrate for a light-emitting element of the first embodiment, the heat-dissipating body 12 has a stepped portion on the side surface, and the heat-emitting element 12 has an inclined portion on the side surface of the substrate for a light-emitting element according to the second embodiment. This aspect is different. Other than this, it is the same as the substrate for a light-emitting element of the first embodiment. In the light-emitting element substrate of the second embodiment, the heat sink 12 different from the light-emitting element substrate of the first embodiment will be mainly described.

例如,如圖10所示,於第2實施形態之發光元件用基板中,散熱體12於側面具有傾斜部。散熱體12包含以垂直於厚度方向之平面分割之複數個構成單元,例如,自第2主面11b側起依序具有第1構成單元121及第2構成單元122。 For example, as shown in FIG. 10, in the substrate for a light-emitting element of the second embodiment, the heat sink 12 has an inclined portion on the side surface. The heat radiating body 12 includes a plurality of constituent units divided by a plane perpendicular to the thickness direction. For example, the heat radiating body 12 has the first constituent unit 121 and the second constituent unit 122 in this order from the second main surface 11b side.

再者,散熱體12亦可分割為3個以上之構成單元。於該情形時,第1構成單元可自除距第1主面11a側最近之第2構成單元以外之複數個 構成單元之中任意地決定。關於實施形態之發光元件用基板,於散熱體12之剖面為3個以上之情形時,較佳為第2被覆層14配置於除第2構成單元以外之2個以上構成單元全部之構成單元間。 Further, the heat sink 12 may be divided into three or more constituent units. In this case, the first constituent unit can be plural from the second constituent unit closest to the first main surface 11a side. The constituent units are arbitrarily determined. In the case of the light-emitting element substrate of the embodiment, when the cross-section of the heat sink 12 is three or more, it is preferable that the second cladding layer 14 is disposed between the constituent units of the two or more constituent units other than the second constituent unit. .

第2被覆層14配置於第1構成單元121與第2構成單元122之間。 又,第2被覆層14覆蓋配置於其第2主面11b側之第1構成單元121之第1主面11a側之端面。進而,第2被覆層14之外緣配置於該第1構成單元121之第1主面11a側之端面所形成之外緣之外側。 The second coating layer 14 is disposed between the first constituent unit 121 and the second constituent unit 122. Moreover, the second coating layer 14 covers the end surface on the first main surface 11a side of the first constituent unit 121 disposed on the second main surface 11b side. Further, the outer edge of the second covering layer 14 is disposed on the outer side of the outer edge formed on the end surface of the first main surface 11a of the first constituent unit 121.

於該情形時,亦與上述所示之發光元件用基板之第1實施形態相同地,第1被覆層13係配置為覆蓋第2構成單元122之第1主面11a側之端面,且外緣位於距該端面之外緣特定之距離L1之外側。又,第2被覆層14亦係配置為覆蓋第1構成單元121之第1主面11a側之端面,且外緣位於距該端面之外緣上述所示之特定距離L2之外側。又,較佳為第2構成單元122中之第1主面11a側之端面之面積小於發光元件之搭載部之面積。進而,較佳為第1構成單元121中之第1主面11a側之端面之面積大於發光元件之搭載部之面積。 In this case, the first covering layer 13 is disposed so as to cover the end surface of the second main surface 11a on the first main surface 11a side, and the outer edge is the same as the first embodiment of the light-emitting element substrate. Located on the outer side of the distance L 1 that is specific to the outer edge of the end face. Further, the second covering layer 14 is also disposed so as to cover the end surface on the first main surface 11a side of the first constituent unit 121, and the outer edge is located outside the specific distance L 2 shown by the outer edge of the end surface. Moreover, it is preferable that the area of the end surface on the first main surface 11a side of the second structural unit 122 is smaller than the area of the mounting portion of the light-emitting element. Further, it is preferable that the area of the end surface on the first main surface 11a side of the first constituent unit 121 is larger than the area of the mounting portion of the light-emitting element.

又,於在側面具有傾斜部之散熱體12之情形時,與上述同樣地測定之散熱體12之側面之角度θ亦較佳為20°以上。於散熱體12於側面具有傾斜部之情形時,角度θ係於基體11之厚度方向上延伸之第1直線與通過散熱體12之側面之第2直線所形成之角度。 Further, in the case of the heat sink 12 having the inclined portion on the side surface, the angle θ of the side surface of the heat sink 12 measured in the same manner as described above is preferably 20 or more. When the heat sink 12 has an inclined portion on the side surface, the angle θ is an angle formed by the first straight line extending in the thickness direction of the base 11 and the second straight line passing through the side surface of the heat sink 12 .

其次,對發光元件用基板之製造方法,以基體為低溫共燒陶瓷(LTCC)之情形為例於以下進行說明。再者,本發明之發光元件用基板之製造方法並不限定於此。 Next, a method of manufacturing a substrate for a light-emitting element will be described below by taking a case where the substrate is a low-temperature co-fired ceramic (LTCC). Further, the method for producing the substrate for a light-emitting element of the present invention is not limited thereto.

發光元件用基板例如可經歷以下(A)~(D)之步驟而製造。 The substrate for a light-emitting element can be produced, for example, by the following steps (A) to (D).

(A)使用含有玻璃粉末與陶瓷粉末之玻璃陶瓷組合物,製作生片(以下,記為片材製作步驟)。 (A) A green sheet containing a glass powder and a ceramic powder is used to produce a green sheet (hereinafter referred to as a sheet forming step).

(B)形成成為散熱體12、第1被覆層13、第2被覆層14等導體層之 未焙燒導體層(以下,記為導體層形成步驟)。 (B) forming a conductor layer such as the heat sink 12, the first covering layer 13, and the second covering layer 14 The unfired conductor layer (hereinafter referred to as a conductor layer forming step).

(C)使形成有未焙燒導體層之生片積層(以下,記為積層步驟)。 (C) A green sheet layer on which an unfired conductor layer is formed (hereinafter referred to as a laminate step).

(D)焙燒積層之生片(以下,記為焙燒步驟)。 (D) A green sheet in which the laminate is fired (hereinafter, referred to as a baking step).

以下,對各步驟進行說明。 Hereinafter, each step will be described.

(A)片材製作步驟 (A) Sheet making step

於含有玻璃粉末及陶瓷粉末之玻璃陶瓷組合物中,添加黏合劑,視需要添加塑化劑、分散劑、溶劑等,製備漿料。藉由刮刀法等使該漿料成形為片狀,加以乾燥,製造生片。此時,生片較佳為例如根據散熱體12之構成單元之個數(本發明之情形為2個以上),製造複數種。再者,對應於各構成單元之生片可為具有由一片之片材構成之單層構造者,亦可為具有由2片以上之片材構成之積層構造者。 A paste is prepared by adding a binder, adding a plasticizer, a dispersant, a solvent, or the like to the glass ceramic composition containing the glass powder and the ceramic powder. The slurry is formed into a sheet shape by a doctor blade method or the like, and dried to produce a green sheet. In this case, the green sheets are preferably manufactured in plural numbers, for example, according to the number of constituent units of the heat sink 12 (two or more in the case of the present invention). Further, the green sheet corresponding to each constituent unit may be a single layer structure composed of one sheet, or may be a laminate structure composed of two or more sheets.

玻璃粉末較佳為具有550℃以上且700℃以下之玻璃轉移點(Tg)。於玻璃轉移點(Tg)未達550℃之情形時,有變得難以脫脂之虞。於超過700℃之情形時,有收縮起始溫度變高,尺寸精度降低之虞。 The glass powder preferably has a glass transition point (Tg) of 550 ° C or more and 700 ° C or less. When the glass transition point (Tg) is less than 550 ° C, there is a tendency to become degreased. When the temperature exceeds 700 ° C, the shrinkage initiation temperature becomes high and the dimensional accuracy is lowered.

玻璃粉末較佳為於以800℃以上且930℃以下焙燒時析出結晶。於析出結晶之情形時,可獲得充分之機械強度。進而,玻璃粉末較佳為藉由DTA(示差熱分析)測定之結晶峰溫度(Tc)為880℃以下。於結晶峰溫度(Tc)為880℃以下之情形時,尺寸精度變高。 The glass powder is preferably precipitated crystals when calcined at 800 ° C or more and 930 ° C or less. In the case of precipitation of crystallization, sufficient mechanical strength can be obtained. Further, the glass powder preferably has a crystallization peak temperature (Tc) of 880 ° C or less as measured by DTA (differential thermal analysis). When the crystallization peak temperature (Tc) is 880 ° C or less, the dimensional accuracy becomes high.

作為此種玻璃粉末,例如較佳為含有SiO2 57mol%以上且65mol%以下、B2O3 13mol%以上且18mol%以下、CaO 9mol%以上且23mol%以下、Al2O3 3mol%以上且8mol%以下、及選自K2O及Na2O之至少一者合計0.5mol%以上且6mol%以下。於此種玻璃粉末之情形時,基體11之表面之平坦度提高。 As such a glass powder, for example, it is preferable to contain SiO 2 of 57 mol% or more and 65 mol% or less, B 2 O 3 of 13 mol% or more and 18 mol% or less, CaO of 9 mol% or more and 23 mol% or less, and Al 2 O 3 3 mol% or more. 8 mol% or less and at least one selected from the group consisting of K 2 O and Na 2 O is 0.5 mol% or more and 6 mol% or less in total. In the case of such a glass powder, the flatness of the surface of the substrate 11 is improved.

SiO2成為玻璃之網絡成形劑。於SiO2之含量未達57mol%之情形時,有難以獲得穩定之玻璃,化學耐久性亦降低之虞。另一方面,於SiO2之含量超過65mol%之情形時,有玻璃熔融溫度或玻璃轉移點 (Tg)過度變高之虞。SiO2之含量較佳為58mol%以上,更佳為59mol%以上,尤佳為60mol%以上。又,SiO2之含量較佳為64mol%以下,更佳為63mol%以下。 SiO 2 becomes a network forming agent for glass. When the content of SiO 2 is less than 57 mol%, it is difficult to obtain a stable glass, and the chemical durability is also lowered. On the other hand, when the content of SiO 2 exceeds 65 mol%, there is a possibility that the glass melting temperature or the glass transition point (Tg) is excessively high. The content of SiO 2 is preferably 58 mol% or more, more preferably 59 mol% or more, and particularly preferably 60 mol% or more. Further, the content of SiO 2 is preferably 64 mol% or less, more preferably 63 mol% or less.

B2O3成為玻璃之網絡成形劑。於B2O3之含量未達13mol%之情形時,有玻璃熔融溫度或玻璃轉移點(Tg)過度變高之虞。另一方面,於B2O3之含量超過18mol%之情形時,有難以獲得穩定之玻璃,又,化學耐久性亦降低之虞。B2O3之含量較佳為14mol%以上,更佳為15mol%以上。又,B2O3之含量較佳為17mol%以下,更佳為16mol%以下。 B 2 O 3 becomes a network forming agent for glass. When the content of B 2 O 3 is less than 13 mol%, there is a possibility that the glass melting temperature or the glass transition point (Tg) is excessively high. On the other hand, when the content of B 2 O 3 exceeds 18 mol%, it is difficult to obtain a stable glass, and the chemical durability is also lowered. The content of B 2 O 3 is preferably 14 mol% or more, more preferably 15 mol% or more. Further, the content of B 2 O 3 is preferably 17 mol% or less, more preferably 16 mol% or less.

Al2O3係為了提高玻璃之穩定性、化學耐久性及強度而添加。於Al2O3之含量未達3mol%之情形時,有玻璃變得不穩定之虞。另一方面,於Al2O3之含量超過8mol%之情形時,有玻璃熔融溫度或玻璃轉移點(Tg)過度變高之虞。Al2O3之含量較佳為4mol%以上,更佳為5mol%以上。又,Al2O3之含量較佳為7mol%以下,更佳為6mol%以下。 Al 2 O 3 is added to improve the stability, chemical durability and strength of the glass. When the content of Al 2 O 3 is less than 3 mol%, there is a possibility that the glass becomes unstable. On the other hand, when the content of Al 2 O 3 exceeds 8 mol%, there is a possibility that the glass melting temperature or the glass transition point (Tg) is excessively high. The content of Al 2 O 3 is preferably 4 mol% or more, more preferably 5 mol% or more. Further, the content of Al 2 O 3 is preferably 7 mol% or less, more preferably 6 mol% or less.

CaO係為了提高玻璃之穩定性或結晶之析出性,且降低玻璃熔融溫度或玻璃轉移點(Tg)而添加。於CaO之含量未達9mol%之情形時,有玻璃熔融溫度過度變高之虞。另一方面,於CaO之含量超過23mol%之情形時,有玻璃變得不穩定之虞。CaO之含量較佳為12mol%以上,更佳為13mol%以上,尤佳為14mol%以上。又,CaO之含量較佳為22mol%以下,更佳為21mol%以下,尤佳為20mol%以下。 CaO is added in order to improve the stability of glass or the precipitation of crystals, and to lower the glass melting temperature or the glass transition point (Tg). When the content of CaO is less than 9 mol%, there is a possibility that the glass melting temperature is excessively high. On the other hand, when the content of CaO exceeds 23 mol%, the glass becomes unstable. The content of CaO is preferably 12 mol% or more, more preferably 13 mol% or more, and particularly preferably 14 mol% or more. Further, the content of CaO is preferably 22 mol% or less, more preferably 21 mol% or less, still more preferably 20 mol% or less.

K2O、Na2O降低玻璃轉移點(Tg)。於K2O及Na2O之合計含量未達0.5mol%之情形時,有玻璃熔融溫度或玻璃轉移點(Tg)過度變高之虞。另一方面,於K2O及Na2O之合計含量超過6mol%之情形時,有化學耐久性、尤其是耐酸性降低之虞,有電絕緣性亦降低之虞。K2O及Na2O之合計含量較佳為0.8mol%以上且5mol%以下。 K 2 O, Na 2 O lowers the glass transition point (Tg). When the total content of K 2 O and Na 2 O is less than 0.5 mol%, there is a possibility that the glass melting temperature or the glass transition point (Tg) is excessively high. On the other hand, when the total content of K 2 O and Na 2 O exceeds 6 mol%, the chemical durability, particularly the acid resistance, is lowered, and the electrical insulating properties are also lowered. The total content of K 2 O and Na 2 O is preferably 0.8 mol% or more and 5 mol% or less.

再者,玻璃粉末未必限定於僅由上述成分構成者,可於滿足玻璃轉移點(Tg)等各特性之範圍內含有其他成分。於含有其他成分之情形時,其合計含量較佳為10mol%以下。 In addition, the glass powder is not necessarily limited to those composed only of the above components, and other components may be contained within a range satisfying various characteristics such as a glass transition point (Tg). In the case of containing other components, the total content thereof is preferably 10 mol% or less.

玻璃粉末係藉由熔融法製造具有上述玻璃組成之玻璃,藉由乾式粉碎法或濕式粉碎法進行粉碎而獲得。於濕式粉碎法之情形時,較佳為使用水作為溶劑。粉碎例如可使用輥磨機、球磨機、噴射磨機等粉碎機。 The glass powder is obtained by a method of producing a glass having the above glass composition by a melt method, and pulverizing it by a dry pulverization method or a wet pulverization method. In the case of the wet pulverization method, it is preferred to use water as a solvent. For the pulverization, for example, a pulverizer such as a roll mill, a ball mill, or a jet mill can be used.

玻璃粉末之50%平均粒徑(D50)較佳為0.5μm以上且2μm以下。於玻璃粉末之50%平均粒徑為0.5μm以上之情形時,玻璃粉末不易凝聚,容易處理,且均勻地分散。另一方面,於玻璃粉末之50%平均粒徑為2μm以下之情形時,玻璃軟化溫度之上升或燒結不足被抑制。粒徑之調節係藉由分級等進行。再者,本說明書中,粒徑意指藉由根據雷射繞射-散射法之粒徑測定裝置所獲得之值。 The 50% average particle diameter (D 50 ) of the glass powder is preferably 0.5 μm or more and 2 μm or less. When the 50% average particle diameter of the glass powder is 0.5 μm or more, the glass powder is less likely to aggregate, is easy to handle, and is uniformly dispersed. On the other hand, when the 50% average particle diameter of the glass powder is 2 μm or less, the increase in the glass softening temperature or insufficient sintering is suppressed. The adjustment of the particle size is carried out by classification or the like. Further, in the present specification, the particle diameter means a value obtained by a particle diameter measuring device according to a laser diffraction-scattering method.

作為陶瓷粉末,可使用自先前起用於玻璃陶瓷之製造者。作為陶瓷粉末,例如可較佳地使用氧化鋁粉末、氧化鋯粉末、或氧化鋁粉末與氧化鋯粉末之混合物。陶瓷粉末之50%平均粒徑(D50)例如較佳為0.5μm以上且4μm以下。 As the ceramic powder, a manufacturer for glass ceramics from the past can be used. As the ceramic powder, for example, an alumina powder, a zirconia powder, or a mixture of an alumina powder and a zirconia powder can be preferably used. The 50% average particle diameter (D 50 ) of the ceramic powder is, for example, preferably 0.5 μm or more and 4 μm or less.

將玻璃粉末與陶瓷粉末調配、混合,獲得玻璃陶瓷組合物。關於玻璃粉末與陶瓷粉末之比率,較佳為玻璃粉末為30質量%以上且50質量%以下,陶瓷粉末為50質量%以上且70質量%以下。於玻璃陶瓷組合物中,添加黏合劑,視需要添加塑化劑、分散劑、溶劑等,製備漿料。 The glass powder is blended and mixed with the ceramic powder to obtain a glass ceramic composition. The ratio of the glass powder to the ceramic powder is preferably 30% by mass or more and 50% by mass or less, and the ceramic powder is 50% by mass or more and 70% by mass or less. A paste is prepared by adding a binder, adding a plasticizer, a dispersant, a solvent, or the like to the glass ceramic composition.

作為黏合劑,可列舉聚乙烯醇縮丁醛、丙烯酸系樹脂等。作為塑化劑,可列舉鄰苯二甲酸二丁酯、鄰苯二甲酸二辛酯、鄰苯二甲酸丁基苄酯等。又,作為溶劑,可列舉甲苯、二甲苯、2-丙醇、2-丁醇等有機溶劑。 Examples of the binder include polyvinyl butyral, an acrylic resin, and the like. Examples of the plasticizer include dibutyl phthalate, dioctyl phthalate, and butyl benzyl phthalate. Further, examples of the solvent include organic solvents such as toluene, xylene, 2-propanol and 2-butanol.

藉由刮刀法等使漿料成形為片狀,加以乾燥,製成生片。生片亦可為複數片積層而成者。生片例如係製造成為第1基體111、第2基體112、及殼體16之3種。 The slurry is formed into a sheet shape by a doctor blade method or the like, and dried to obtain a green sheet. The green film can also be composed of a plurality of layers. The green sheet is produced, for example, into three types of the first base 111, the second base 112, and the casing 16.

(B)導體層形成步驟 (B) Conductor layer forming step

於成為第1基體111之生片上,於形成孔部後,藉由網版印刷法對該孔部填充導體膏,形成成為散熱體12之第1構成單元121等之未焙燒導體層。又,於該生片之正面及背面藉由網版印刷法印刷導體膏,形成成為第2被覆層14、外部電極17、18之未焙燒導體層。 On the green sheet to be the first substrate 111, after the hole portion is formed, the hole portion is filled with the conductor paste by a screen printing method to form an unfired conductor layer which is the first constituent unit 121 of the heat sink 12. Further, a conductor paste is printed on the front and back sides of the green sheet by a screen printing method to form an unfired conductor layer which serves as the second cladding layer 14 and the external electrodes 17 and 18.

於成為第2基體112之生片上,於形成孔部後,藉由網版印刷法對該孔部填充導體膏,形成成為第2構成單元122等之未焙燒導體層。又,於該生片之正面藉由網版印刷法印刷導體膏,形成成為第1被覆層13、配線導體15之未焙燒導體層。 On the green sheet to be the second substrate 112, after the hole portion is formed, the hole portion is filled with the conductor paste by a screen printing method to form an unfired conductor layer which is the second constituent unit 122 or the like. Further, a conductor paste is printed on the front side of the green sheet by a screen printing method to form an unfired conductor layer which becomes the first cladding layer 13 and the wiring conductor 15.

於成為殼體16之生片形成包圍第1被覆層13及配線導體15之大小之孔部。 The green sheet that becomes the casing 16 forms a hole portion that surrounds the first cladding layer 13 and the wiring conductor 15.

作為導體膏,例如可使用於以銅、銀、金等為主成分之金屬粉末中,添加乙基纖維素等媒劑並視需要添加溶劑等而製成膏狀者。 For the conductive paste, for example, a metal powder such as copper, silver or gold may be added to a metal powder such as ethyl cellulose, and a solvent or the like may be added as needed to form a paste.

(C)積層步驟 (C) Lamination step

使形成有未焙燒導體層之各生片以特定之順序積層後,將該等壓接而一體化。 Each of the green sheets on which the unfired conductor layer is formed is laminated in a specific order, and then these are pressure-bonded and integrated.

(D)焙燒步驟 (D) baking step

對經一體化之生片進行用以使玻璃陶瓷組合物燒結之焙燒。藉此,獲得發光元件用基板10。再者,亦可視需要於焙燒前,進行用以去除黏合劑等之脫脂。 The integrated green sheets are subjected to baking for sintering the glass ceramic composition. Thereby, the substrate 10 for a light-emitting element is obtained. Further, it is also possible to perform degreasing for removing the binder or the like before the baking, as needed.

脫脂溫度較佳為500℃以上且600℃以下。脫脂時間較佳為1小時以上且10小時以下。於脫脂溫度為500℃以上、脫脂時間為1小時以上之情形時,黏合劑等之去除變得良好。於脫脂溫度為600℃以下、脫 脂時間為10小時以下之情形時,生產性等變得良好。 The degreasing temperature is preferably 500 ° C or more and 600 ° C or less. The degreasing time is preferably from 1 hour to 10 hours. When the degreasing temperature is 500 ° C or more and the degreasing time is 1 hour or more, the removal of the binder or the like is good. Degreasing temperature is below 600 ° C, off When the grease time is 10 hours or less, productivity and the like become good.

關於焙燒溫度,考慮到緻密化及生產性,較佳為800℃以上且930℃以下,更佳為850℃以上且900℃以下,進而較佳為860℃以上且880℃以下。焙燒時間較佳為20分鐘以上且60分鐘以下。於焙燒溫度為800℃以上之情形時,緻密化變得良好。於焙燒溫度為930℃以下之情形時,變形得以抑制,且生產性變得良好。又,於使用含有銀之導體膏之情形時,若焙燒溫度為880℃以下,則軟化所導致之變形得到抑制。 The calcination temperature is preferably 800 ° C or more and 930 ° C or less, more preferably 850 ° C or more and 900 ° C or less, and still more preferably 860 ° C or more and 880 ° C or less in consideration of densification and productivity. The baking time is preferably 20 minutes or more and 60 minutes or less. When the baking temperature is 800 ° C or more, densification becomes good. When the baking temperature is 930 ° C or lower, the deformation is suppressed and the productivity is improved. Further, in the case of using a conductor paste containing silver, if the baking temperature is 880 ° C or lower, the deformation due to softening is suppressed.

[實施例] [Examples]

以下,說明本發明之實施例。 Hereinafter, embodiments of the invention will be described.

再者,本發明並不限定於該等實施例。 Furthermore, the invention is not limited to the embodiments.

[實施例1~19] [Examples 1 to 19]

如表1所示,改變比率(V2/V1)、基體11之厚度、第2構成單元122之剖面面積(相當於第1主面11a側之端面之面積)、距離L1、L2、曲率半徑,製作具有如圖1~圖3所示之構造之評價用基板。此處,比率(V2/V1)為散熱體12之體積(V2)相對於基體11及配置於其內部之構件之合計體積(V1)的比率。距離L1為第2構成單元122之第1主面11a側之端面所形成之外緣之(正方形之)各邊與第1被覆層13之外緣之(正方形之)各邊的距離,距離L2為第1構成單元121之第1主面11a側之端面所形成之外緣之(正方形之)各邊與第2被覆層14之外緣之(正方形之)各邊的距離。曲率半徑為散熱體12之垂直於厚度方向之剖面之正方形之角部之曲率半徑。再者,第1構成單元121之剖面形狀於厚度方向上相同,第2構成單元122之剖面形狀亦於厚度方向上相同,三維上構成四角柱。 As shown in Table 1, the ratio (V 2 /V 1 ), the thickness of the base 11 , the cross-sectional area of the second constituent unit 122 (the area corresponding to the end surface on the first main surface 11 a side), and the distances L 1 and L 2 are changed. A substrate for evaluation having a structure as shown in FIGS. 1 to 3 was prepared for the radius of curvature. Here, the ratio (V 2 /V 1 ) is a ratio of the volume (V 2 ) of the heat sink 12 to the total volume (V 1 ) of the base 11 and the members disposed therein. The distance L 1 is the distance between the sides of the outer edge (the square) formed by the end faces on the first main surface 11 a side of the second constituent unit 122 and the sides of the outer edge of the first covering layer 13 (the square), and the distance L 2 is the distance between each side (square) of the outer edge formed by the end surface on the first main surface 11a side of the first constituent unit 121 and each side (square) of the outer edge of the second cladding layer 14. The radius of curvature is the radius of curvature of the corner of the square of the heat sink 12 perpendicular to the thickness direction. Further, the cross-sectional shape of the first constituent unit 121 is the same in the thickness direction, and the cross-sectional shape of the second constituent unit 122 is also the same in the thickness direction, and the quadrangular prism is formed three-dimensionally.

如上所述,基體11、散熱體12、第1被覆層13、第2被覆層14之平面形狀均為正方形。基體11之一邊之長度為3mm,散熱體12中之第1構成單元121之一邊之長度為1.28mm,以成為表1之面積值之方式使 散熱體12中之第2構成單元122之一邊之長度變化。又,殼體16之內側之一邊之長度為1.8mm。第1基體111與第2基體112之厚度相同。又,第1被覆層13之厚度為12μm,第2被覆層14之厚度為12μm。 As described above, the planar shape of the base 11, the heat sink 12, the first covering layer 13, and the second covering layer 14 is square. The length of one side of the base 11 is 3 mm, and the length of one side of the first constituent unit 121 in the heat radiating body 12 is 1.28 mm, so that the area value of Table 1 is made. The length of one side of the second constituent unit 122 in the heat radiating body 12 changes. Further, the length of one side of the inner side of the casing 16 is 1.8 mm. The first base 111 and the second base 112 have the same thickness. Further, the thickness of the first covering layer 13 was 12 μm, and the thickness of the second covering layer 14 was 12 μm.

又,評價用基板係以如下方式製造。 Further, the substrate for evaluation was produced as follows.

以SiO2成為60.4mol%、B2O3成為15.6mol%、Al2O3成為6mol%、CaO成為15mol%、K2O成為1mol%、Na2O成為2mol%之方式將原料調配、混合,將該原料混合物投入至鉑坩堝,以1600℃熔融60分鐘後,使該熔融狀態之玻璃流出並冷卻。藉由氧化鋁製球磨機將該玻璃粉碎40小時,製造玻璃粉末。再者,粉碎時之溶劑係使用乙醇。 The raw materials are blended and mixed such that SiO 2 is 60.4 mol%, B 2 O 3 is 15.6 mol%, Al 2 O 3 is 6 mol%, CaO is 15 mol%, K 2 O is 1 mol%, and Na 2 O is 2 mol%. The raw material mixture was poured into a platinum crucible, and after melting at 1600 ° C for 60 minutes, the molten glass was allowed to flow out and cooled. The glass was pulverized by an alumina ball mill for 40 hours to produce a glass powder. Further, the solvent used in the pulverization was ethanol.

以該玻璃粉末成為40質量%、氧化鋁粉末(昭和電工公司製造、商品名:AL-45H)成為60質量%之方式進行調配,加以混合,藉此製造玻璃陶瓷組合物。於該玻璃陶瓷組合物50g中,調配有機溶劑(將甲苯、二甲苯、2-丙醇、2-丁醇以質量比4:2:2:1混合而成者)15g、塑化劑(鄰苯二甲酸二-2-乙基己酯)2.5g、作為黏合劑之聚乙烯醇縮丁醛(DENKA公司製造、商品名:PVK#3000K)5g,進而調配分散劑(BYK-Chemie公司製造、商品名:BYK180),進行混合,製備漿料。 The glass ceramic composition was prepared by blending and mixing the glass powder to 40% by mass, and alumina powder (manufactured by Showa Denko Co., Ltd., trade name: AL-45H) to be 60% by mass. Into 50 g of the glass ceramic composition, an organic solvent (mixed with toluene, xylene, 2-propanol, 2-butanol at a mass ratio of 4:2:2:1) of 15 g, a plasticizer (adjacent) was prepared. 2.5 g of di-2-ethylhexyl phthalate), 5 g of polyvinyl butyral (manufactured by DENKA Co., Ltd., trade name: PVK #3000K) as a binder, and further prepared with a dispersant (manufactured by BYK-Chemie Co., Ltd.) Trade name: BYK180), mixed to prepare a slurry.

藉由刮刀法將該漿料塗佈於PET(polyethylene terephthalate,聚對苯二甲酸乙二酯)膜上,進行乾燥,製造成為第1基體111、第2基體112、及殼體16之生片。基體11、第1基體111、第2基體112之厚度係藉由該生片之厚度進行調整。 The slurry is applied onto a PET (polyethylene terephthalate) film by a doctor blade method and dried to produce a green sheet which becomes the first substrate 111, the second substrate 112, and the casing 16. . The thickness of the base 11, the first base 111, and the second base 112 is adjusted by the thickness of the green sheet.

對於各生片,視需要進行孔部之形成、導體膏之填充、印刷等,形成成為散熱體12、第1被覆層13、第2被覆層14等之未焙燒導體層。比率(V2/V1)、散熱體12中之第2構成單元122之剖面面積、剖面形狀(正方形形狀)之角部之曲率半徑係藉由形成於生片之孔部之大小、形狀進行調整。又,距離L1、L2之調整係藉由導體膏之印刷範圍進行 調整。 For each green sheet, the formation of the hole portion, the filling of the conductor paste, printing, and the like are performed, and the unfired conductor layer such as the heat sink 12, the first covering layer 13, and the second covering layer 14 is formed. The ratio (V 2 /V 1 ), the cross-sectional area of the second constituent unit 122 in the heat radiating body 12, and the radius of curvature of the corner portion of the cross-sectional shape (square shape) are determined by the size and shape of the hole portion formed in the green sheet. Adjustment. Moreover, the adjustment of the distances L 1 and L 2 is adjusted by the printing range of the conductor paste.

再者,導體膏係以如下方式製造:將導電性粉末(大研化學工業公司製造、商品名:S550)、作為媒劑之乙基纖維素以質量比85:15之比率進行調配,以固形物成分成為85質量%之方式分散於作為溶劑之α-松油醇後,於陶瓷研缽中進行1小時混練,進而利用三輥混練機進行3次分散。又,導體膏之填充、印刷係藉由網版印刷進行。 Further, the conductor paste is produced by blending a conductive powder (manufactured by Daikin Chemical Co., Ltd., trade name: S550) and ethyl cellulose as a vehicle at a mass ratio of 85:15 to form a solid shape. After the content of the component was 85% by mass, it was dispersed in α-terpineol as a solvent, and then kneaded in a ceramic mortar for 1 hour, and further dispersed three times by a three-roll kneader. Further, the filling and printing of the conductor paste are performed by screen printing.

使形成有未焙燒導體層之生片以特定之順序積層後,進行壓接而一體化。其後,對經一體化之生片進行脫脂溫度550℃、脫脂時間5小時之脫脂。進而,進行焙燒溫度870℃、焙燒時間30分鐘之焙燒。藉此,製作評價用基板。 The green sheets on which the unfired conductor layers are formed are laminated in a specific order, and then pressure-bonded and integrated. Thereafter, the integrated green sheets were degreased at a degreasing temperature of 550 ° C and a degreasing time of 5 hours. Further, calcination was carried out at a calcination temperature of 870 ° C and a calcination time of 30 minutes. Thereby, a substrate for evaluation was produced.

[比較例1] [Comparative Example 1]

除不形成第1被覆層13以外,以與實施例1相同之方式製作評價用基板。 A substrate for evaluation was produced in the same manner as in Example 1 except that the first coating layer 13 was not formed.

[比較例2] [Comparative Example 2]

除不形成第2被覆層14以外,以與實施例1相同之方式製作評價用基板。 A substrate for evaluation was produced in the same manner as in Example 1 except that the second coating layer 14 was not formed.

其次,對實施例及比較例之評價用基板,藉由使用金錫共晶焊料以310℃加熱60秒而使面積為1×1mm之發光元件與第1被覆層13接合後,使用光學顯微鏡以30倍之倍率觀察表面之破裂。將結果示於表1。再者,比較例1係使用金錫共晶焊料以上述條件將發光元件與散熱體12直接接合,進行評價。表1中,「○」表示評價用基板之表面未產生破裂,「×」表示於評價用基板之表面產生些許破裂。 Next, the substrate for evaluation of the examples and the comparative examples was bonded to the first cladding layer 13 by heating with a gold tin eutectic solder at 310 ° C for 60 seconds, and then using an optical microscope. The rupture of the surface was observed at a magnification of 30 times. The results are shown in Table 1. Further, in Comparative Example 1, the light-emitting element was directly bonded to the heat sink 12 under the above conditions using a gold-tin eutectic solder, and evaluated. In Table 1, "○" indicates that no crack occurred on the surface of the evaluation substrate, and "x" indicates that some crack occurred on the surface of the evaluation substrate.

根據表1可明瞭,不具有第1被覆層13之比較例1之評價用基板、不具有第2被覆層14之比較例2之評價用基板均產生破裂。另一方面,具有第1被覆層13及第2被覆層14之評價用基板均未產生破裂。 As is clear from Table 1, the evaluation substrate of Comparative Example 1 having no first coating layer 13 and the evaluation substrate of Comparative Example 2 having no second coating layer 14 were all broken. On the other hand, none of the evaluation substrates having the first coating layer 13 and the second coating layer 14 was cracked.

Claims (12)

一種發光元件用基板,其包括:板狀之基體,其具有搭載發光元件之第1主面、及配置於上述第1主面之相反側之第2主面;散熱體,其配置於上述基體之內部,上述第2主面側之端面之面積大於上述第1主面側之端面之面積,且具有於上述基體之厚度方向分割之複數個構成單元;第1被覆層,其配置於上述第1主面上,覆蓋配置於上述第1主面側之上述散熱體之第2構成單元之上述第1主面側之端面,且外緣配置於上述第2構成單元之上述第1主面側之端面所形成之外緣之外側;及第2被覆層,其配置於上述散熱體之複數個構成單元之間,覆蓋該等構成單元中之配置於較上述第2構成單元更靠上述第2主面側之第1構成單元之上述第1主面側之端面,且外緣配置於上述第1構成單元之上述第1主面側之端面所形成之外緣之外側,上述散熱體、上述第1被覆層、及上述第2被覆層之垂直於厚度方向之剖面均具有正方形之剖面形狀,上述散熱體之垂直於厚度方向之剖面之正方形之角部的曲率半徑為0.03mm以上且0.40mm以下。 A substrate for a light-emitting element, comprising: a plate-shaped substrate having a first main surface on which the light-emitting element is mounted; and a second main surface disposed on the opposite side of the first main surface; and a heat sink disposed on the substrate In the inside, the area of the end surface on the second main surface side is larger than the area of the end surface on the first main surface side, and has a plurality of constituent units divided in the thickness direction of the base body; and the first coating layer is disposed in the above The main surface of the first main surface of the second heat dissipating body disposed on the first main surface side of the first main surface is disposed on the first main surface side, and the outer edge is disposed on the first main surface side of the second constituent unit The second coating layer is disposed between the plurality of constituent elements of the heat dissipating body, and the second coating layer is disposed between the plurality of constituent units, and the second constituent layer is disposed above the second constituent unit The end surface on the first main surface side of the first constituent unit on the main surface side, and the outer edge is disposed on the outer side of the outer edge of the first main surface side of the first constituent unit, and the heat radiating body and the heat radiating body First coating layer and second coating The cross-section perpendicular to the thickness direction each having a square cross-sectional shape, the vertical member of the heat sink to the radius of curvature of the corner portion of the square cross section of the thickness direction of not less than 0.03mm and 0.40mm or less. 一種發光元件用基板,其包括:板狀之基體,其具有搭載發光元件之第1主面、及配置於上述第1主面之相反側之第2主面;散熱體,其配置於上述基體之內部,上述第2主面側之端面之面積大於上述第1主面側之端面之面積,且具有於上述基體之厚度方向分割之複數個構成單元; 第1被覆層,其配置於上述第1主面上,覆蓋配置於上述第1主面側之上述散熱體之第2構成單元之上述第1主面側之端面,且外緣配置於上述第2構成單元之上述第1主面側之端面所形成之外緣之外側;及第2被覆層,其配置於上述散熱體之複數個構成單元之間,覆蓋該等構成單元中之配置於較上述第2構成單元更靠上述第2主面側之第1構成單元之上述第1主面側之端面,且外緣配置於上述第1構成單元之上述第1主面側之端面所形成之外緣之外側,上述散熱體之體積相對於上述基體及配置於其內部之構件之合計之體積的比率為10體積%以上且30體積%以下。 A substrate for a light-emitting element, comprising: a plate-shaped substrate having a first main surface on which the light-emitting element is mounted; and a second main surface disposed on the opposite side of the first main surface; and a heat sink disposed on the substrate The inside end surface of the second main surface side has an area larger than an area of the end surface of the first main surface side, and has a plurality of constituent units divided in a thickness direction of the base body; The first coating layer is disposed on the first main surface, and covers an end surface of the second main component of the heat dissipating body disposed on the first main surface side on the first main surface side, and an outer edge is disposed on the first surface a second coating layer disposed between the plurality of constituent elements of the heat dissipating body and covering the constituent elements The second constituent unit is formed on an end surface on the first main surface side of the first constituent unit on the second main surface side, and an outer edge is formed on an end surface of the first main surface on the first main surface side. On the outer side of the outer edge, the ratio of the volume of the heat sink to the total volume of the substrate and the member disposed therein is 10% by volume or more and 30% by volume or less. 一種發光元件用基板,其包括:板狀之基體,其具有搭載發光元件之第1主面、及配置於上述第1主面之相反側之第2主面;散熱體,其配置於上述基體之內部,上述第2主面側之端面之面積大於上述第1主面側之端面之面積,且具有於上述基體之厚度方向分割之複數個構成單元;第1被覆層,其配置於上述第1主面上,覆蓋配置於上述第1主面側之上述散熱體之第2構成單元之上述第1主面側之端面,且外緣配置於上述第2構成單元之上述第1主面側之端面所形成之外緣之外側;及第2被覆層,其配置於上述散熱體之複數個構成單元之間,覆蓋該等構成單元中之配置於較上述第2構成單元更靠上述第2主面側之第1構成單元之上述第1主面側之端面,且外緣配置於上述第1構成單元之上述第1主面側之端面所形成之外緣之外側,上述第1被覆層之外緣與上述第1主面之搭載上述發光元件之搭載部之外緣相同,或位於較上述搭載部之外緣更內側。 A substrate for a light-emitting element, comprising: a plate-shaped substrate having a first main surface on which the light-emitting element is mounted; and a second main surface disposed on the opposite side of the first main surface; and a heat sink disposed on the substrate In the inside, the area of the end surface on the second main surface side is larger than the area of the end surface on the first main surface side, and has a plurality of constituent units divided in the thickness direction of the base body; and the first coating layer is disposed in the above The main surface of the first main surface of the second heat dissipating body disposed on the first main surface side of the first main surface is disposed on the first main surface side, and the outer edge is disposed on the first main surface side of the second constituent unit The second coating layer is disposed between the plurality of constituent elements of the heat dissipating body, and the second coating layer is disposed between the plurality of constituent units, and the second constituent layer is disposed above the second constituent unit The end surface on the first main surface side of the first constituent unit on the main surface side, and the outer edge is disposed on the outer side of the outer edge of the first main surface side of the first constituent unit, and the first coating layer The outer edge and the above-mentioned first main surface are mounted on A light emitting element mounting portion of the same outside edge or located further inside than the outside edge of the mounting portion. 如請求項1至3中任一項之發光元件用基板,其中上述散熱體朝向上述第2主面側於側面具有階差部,剖面面積階段性地變大。 The substrate for a light-emitting element according to any one of claims 1 to 3, wherein the heat dissipating body has a stepped portion on a side surface of the second main surface side, and a cross-sectional area is gradually increased. 如請求項1至3中任一項之發光元件用基板,其中上述第2構成單元之上述第1主面側之端面所形成之外緣之各邊與對應於上述各邊之上述第1被覆層之外緣之各邊的距離為0.03mm以上。 The substrate for a light-emitting device according to any one of claims 1 to 3, wherein each of the outer edge of the end surface on the first main surface side of the second constituent unit and the first cladding corresponding to each of the sides The distance between each side of the outer edge of the layer is 0.03 mm or more. 如請求項1至3中任一項之發光元件用基板,其中上述第1構成單元之上述第1主面側之端面所形成之外緣之各邊與對應於上述各邊之上述第2被覆層之外緣之各邊的距離為0.05mm以上。 The substrate for a light-emitting device according to any one of claims 1 to 3, wherein each of the outer edge of the end surface on the first main surface side of the first constituent unit and the second coating corresponding to each of the sides The distance between each side of the outer edge of the layer is 0.05 mm or more. 如請求項1至3中任一項之發光元件用基板,其中上述基體具有0.20mm以上且0.60mm以下之厚度。 The substrate for a light-emitting element according to any one of claims 1 to 3, wherein the substrate has a thickness of 0.20 mm or more and 0.60 mm or less. 如請求項1至3中任一項之發光元件用基板,其中上述第1被覆層之厚度為5μm以上且20μm以下。 The substrate for a light-emitting element according to any one of claims 1 to 3, wherein the thickness of the first coating layer is 5 μm or more and 20 μm or less. 如請求項1至3中任一項之發光元件用基板,其中上述第2被覆層之厚度為5μm以上且20μm以下。 The substrate for a light-emitting device according to any one of claims 1 to 3, wherein the thickness of the second coating layer is 5 μm or more and 20 μm or less. 如請求項1至3中任一項之發光元件用基板,其中上述第1被覆層及上述第2被覆層包含金屬材料。 The substrate for a light-emitting element according to any one of claims 1 to 3, wherein the first coating layer and the second coating layer comprise a metal material. 如請求項1至3中任一項之發光元件用基板,其中上述第2構成單元之上述第1主面側之端面所形成之外緣不與上述第1主面之搭載上述發光元件之搭載部之外緣重疊而位於內側。 The substrate for a light-emitting device according to any one of the first to third aspect, wherein the outer edge of the second main surface of the second constituent unit is not mounted on the outer surface of the first main surface. The outer edges of the parts overlap and are located on the inner side. 一種發光裝置,其包括:如請求項1至11中任一項之發光元件用基板、及搭載於上述發光元件用基板之發光元件。 A light-emitting device comprising: the substrate for a light-emitting element according to any one of claims 1 to 11, and a light-emitting device mounted on the substrate for the light-emitting device.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080149960A1 (en) * 2006-12-26 2008-06-26 Nichia Corporation Light-emitting apparatus and method of producing the same
TWI365011B (en) * 2004-04-27 2012-05-21 Kyocera Corp

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4238693B2 (en) * 2003-10-17 2009-03-18 豊田合成株式会社 Optical device
JP2006156447A (en) * 2004-11-25 2006-06-15 Kyocera Corp Wiring board for light emitting element, light emitting device and its manufacturing method
JP2006093565A (en) * 2004-09-27 2006-04-06 Kyocera Corp Wiring board for light emitting element, light emitting device and method for manufacturing it
KR101241650B1 (en) * 2005-10-19 2013-03-08 엘지이노텍 주식회사 Package of light emitting diode
JP4804109B2 (en) * 2005-10-27 2011-11-02 京セラ株式会社 LIGHT EMITTING DEVICE WIRING BOARD, LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE WIRING BOARD MANUFACTURING METHOD
JP5200471B2 (en) * 2006-12-26 2013-06-05 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JP5499960B2 (en) * 2010-07-06 2014-05-21 旭硝子株式会社 Element substrate, light emitting device
KR20140039740A (en) * 2012-09-25 2014-04-02 엘지이노텍 주식회사 Light emitting device package

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI365011B (en) * 2004-04-27 2012-05-21 Kyocera Corp
US20080149960A1 (en) * 2006-12-26 2008-06-26 Nichia Corporation Light-emitting apparatus and method of producing the same

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