TWI645324B - Touch panel - Google Patents

Touch panel Download PDF

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Publication number
TWI645324B
TWI645324B TW104102750A TW104102750A TWI645324B TW I645324 B TWI645324 B TW I645324B TW 104102750 A TW104102750 A TW 104102750A TW 104102750 A TW104102750 A TW 104102750A TW I645324 B TWI645324 B TW I645324B
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layer
touch panel
film
electrode
electrodes
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TW104102750A
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TW201535221A (en
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鈴木壽弘
新井真
石橋哲
須田具和
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日商愛發科股份有限公司
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Position Input By Displaying (AREA)

Abstract

本發明提供一種靜電電容方式之觸控面板,該觸控面板配置於顯示面板上且觸摸操作面來操作,且具有:透明基板,於上述透明基板之上述操作面之背面側於X方向形成之複數個X電極,以及於與上述X方向正交之Y方向形成之複數個Y電極。上述複數個X電極與上述複數個Y電極具有:形成於上述背面側之同一面之複數個透明電極;以及於上述X電極與上述Y電極經由絕緣部相互交叉之交叉部,立體連接相鄰之上述X電極之透明電極或相鄰之上述Y電極之透明電極中之任一者之跳線。上述跳線具有與上述透明電極連接之第一層及積層於該第一層之第二層。上述第一層包括第一金屬氧化膜,上述第二層包括第二金屬氧化膜。上述第一層之折射率低於上述第二層之折射率。 The present invention provides a touch panel of electrostatic capacitance type. The touch panel is arranged on a display panel and is operated by touching an operation surface. The touch panel has a transparent substrate formed on the back side of the operation surface of the transparent substrate in the X direction. A plurality of X electrodes, and a plurality of Y electrodes formed in a Y direction orthogonal to the X direction. The plurality of X electrodes and the plurality of Y electrodes have: a plurality of transparent electrodes formed on the same surface of the back surface side; and an intersection portion where the X electrode and the Y electrode cross each other via an insulating portion, and three-dimensionally connect adjacent ones. A jumper of any one of the transparent electrode of the X electrode or the transparent electrode of the adjacent Y electrode. The jumper has a first layer connected to the transparent electrode and a second layer laminated on the first layer. The first layer includes a first metal oxide film, and the second layer includes a second metal oxide film. The refractive index of the first layer is lower than the refractive index of the second layer.

Description

觸控面板 Touch panel

本發明係關於一種與覆蓋片一體地形成之觸控面板及較佳用於觸控面板之製造方法之技術。 The present invention relates to a touch panel formed integrally with a cover sheet and a technology which is preferably used for a touch panel manufacturing method.

觸控面板為藉由操作者用手指或筆觸摸顯示畫面上之透明的面來檢測所接觸之位置並能夠進行資料輸入之輸入裝置之構成要件,其能夠藉由鍵盤輸入進行直接且直觀之輸入。因此,近年來以移動電話或便攜資訊終端、汽車導航系統為代表,較多用於各種電子設備之操作部。 The touch panel is a constituent element of an input device in which an operator touches a transparent surface on a display screen with a finger or a pen to detect a contacted position and can input data. It can directly and intuitively input through a keyboard. . Therefore, in recent years, mobile phones, portable information terminals, and car navigation systems are representative, and they are often used in operation units of various electronic devices.

上述觸控面板作為輸入裝置能夠貼合於液晶面板等平面型顯示裝置之顯示畫面上來使用。觸控面板之檢測方式有電阻式、靜電電容式、超音波式以及光學式等多種,其結構多種多樣。 The touch panel described above can be used as an input device by being bonded to a display screen of a flat display device such as a liquid crystal panel. Touch panel detection methods include resistive, electrostatic, ultrasonic, and optical, with various structures.

靜電電容式觸控面板大體上能夠分為表面型及投影型。表面型靜電電容式觸控面板難以同時感測2點以上之接觸點。投影型靜電電容式觸控面板能夠同時感測2點以上之接觸點。投影型靜電電容式觸控面板具有於透明基板上一般依序形成有第一透明電極圖案層、第一絕緣層、第二透明電極圖案層、成為端子電極之金屬電極圖案層以及第二絕緣層之各層之積層結構,作為靜電電容式觸控面板用之電極板。 The electrostatic capacitance type touch panel can be roughly classified into a surface type and a projection type. Surface-type capacitive touch panels are difficult to sense more than two points of contact at the same time. The projection type capacitive touch panel can simultaneously sense two or more contact points. The projection type capacitive touch panel has a first transparent electrode pattern layer, a first insulating layer, a second transparent electrode pattern layer, a metal electrode pattern layer serving as a terminal electrode, and a second insulating layer generally formed on a transparent substrate in this order. The laminated structure of each layer is used as an electrode plate for a capacitive touch panel.

並且,將投影型靜電電容式觸控面板重疊於平面型顯示裝置之 顯示畫面上來使用之形態亦有與觸控面板獨立型不同地能夠使整體薄型化之保護玻璃一體型。 In addition, a projection type capacitive touch panel is superimposed on a flat display device. The form used on the display screen is different from the touch panel independent type in that it can reduce the overall thickness of the protective glass integrated type.

即,於觸控面板獨立型中,於平面型顯示裝置之顯示面側經由氣隙貼合獨立型觸控面板,進而於其前面設置以具有邊框等裝飾圖案用於保護表面之保護玻璃(前面板)為代表之透明覆蓋片(參照日本專利特開2012-084025號公報)。 That is, in the touch panel independent type, the independent touch panel is bonded to the display surface side of the flat-type display device through an air gap, and a protective glass having a decorative pattern such as a frame for protecting the surface (front Panel) is a representative transparent cover sheet (refer to Japanese Patent Laid-Open No. 2012-084025).

另一方面,於保護玻璃一體型中,於平面型顯示裝置之顯示面側經由同樣之氣隙貼合保護玻璃一體型觸控面板。另外,關於構成觸控面板之電極或端子、配線等之圖案之方向,由於直接支持圖案之基板之位置於觸控面板獨立型與保護玻璃一體型中成為相反之關係,因此自視認側觀察之方向為相反。 On the other hand, in the protective glass integrated type, the protective glass integrated touch panel is bonded to the display surface side of the flat display device through the same air gap. In addition, regarding the direction of the patterns of electrodes, terminals, wirings, etc. constituting the touch panel, the position of the substrate directly supporting the pattern becomes the opposite relationship between the touch panel independent type and the protective glass integrated type. The direction is opposite.

關於投影型靜電電容式觸控面板之電極構造,若以保護玻璃一體型為代表之透明覆蓋片一體型之例表示,則包括於透明覆蓋片之同一平面上二維配置之傳感器電極即複數個透明導電膜圖案、電性連接透明導電膜圖案之間之跳線部、防止跳線部中之層間之電性短路之絕緣部以及自傳感器電極導出配線直至端子部之配線部。傳感器電極使用ITO(銦錫氧化物)等透明導電膜。另一方面,跳線部使用導電性較ITO更良好之金屬材料(參照日本專利特開2013-020347號公報)。 Regarding the electrode structure of a projection type capacitive touch panel, if the transparent cover sheet integrated type represented by the protective glass integrated type is used as an example, a plurality of sensor electrodes including a two-dimensional arrangement on the same plane of the transparent cover sheet is a plurality of sensor electrodes. The transparent conductive film pattern, the jumper part electrically connecting the transparent conductive film pattern, the insulation part to prevent the electric short circuit between the layers in the jumper part, and the wiring part leading from the sensor electrode to the terminal part. The sensor electrode uses a transparent conductive film such as ITO (indium tin oxide). On the other hand, the jumper portion uses a metal material having better conductivity than ITO (see Japanese Patent Laid-Open No. 2013-020347).

於此種觸控面板中,雖然用於立體連接有規律地配置於同一平面上之傳感器電極之絕緣部及跳線部之結構為不可欠缺,但由於該等絕緣部與跳線部位於作為顯示區域之操作平面區域內,因此要求降低該部分之反射率來提高顯示裝置之視認性。於日本專利特開2013-020347號公報中,如圖6所示,若與使用自透明覆蓋片2之表面依序包括鉬膜71/鋁膜81/鉬膜91之3層結構之薄膜積層材料之情況相比,則顯示於包括鉬氧化膜7/鋁膜8/鉬膜9之3層之情形時減小反射率。 In such a touch panel, although the structure of the insulation part and the jumper part of the sensor electrodes regularly arranged on the same plane for three-dimensional connection is indispensable, because these insulation parts and the jumper part are located as a display In the area of the operation plane, it is required to reduce the reflectance of the part to improve the visibility of the display device. In Japanese Patent Laid-Open No. 2013-020347, as shown in FIG. 6, if a three-layer structure including a molybdenum film 71 / aluminum film 81 / molybdenum film 91 is sequentially formed on the surface of the transparent cover sheet 2 as shown in FIG. Compared with the case, it is shown that the reflectance is reduced when the three layers including the molybdenum oxide film 7 / aluminum film 8 / molybdenum film 9 are included.

但是,如日本專利特開2013-020347號公報之圖6所示,於將跳線 部設為鉬氧化膜7/鋁膜8/鉬膜9之3層之情形時,就嚴格之意義而言,反射率並未於可見光區域之整個區域減小。尤其是於400nm附近之反射率增大而影響反射特性尤其是作為顯示裝置之觸控面板之色調,因此強烈要求改善該問題欲於可見光區域實現大致均勻之反射率。 However, as shown in FIG. 6 of Japanese Patent Laid-Open No. 2013-020347, the jumper In the case of three layers of molybdenum oxide film 7 / aluminum film 8 / molybdenum film 9, in the strict sense, the reflectance does not decrease over the entire visible light region. In particular, the increase in reflectance around 400nm affects the reflection characteristics, especially the hue of a touch panel as a display device. Therefore, it is strongly requested to improve the problem to achieve a substantially uniform reflectance in the visible light region.

進而,存在欲於可見光區域之整個區域使反射率成為10%以下之強烈要求。 Furthermore, there is a strong demand for the entire area of the visible light region to have a reflectance of 10% or less.

本發明係鑒於上述情況而完成者,且欲達成以下之目的。 This invention is made | formed in view of the said situation, and intends to achieve the following objective.

1.於可見光區域之整個區域使反射率減小至10%以下。 1. Reduce the reflectance to less than 10% over the entire visible light region.

2.降低波長依賴性,於可見光區域之整個區域使反射率均勻。 2. Reduce the wavelength dependence and make the reflectance uniform over the entire visible light region.

3.關於蝕刻特性、片電阻值以及與底層之密接性,維持與先前同等程度之特性。 3. Regarding the etching characteristics, the sheet resistance value, and the adhesion to the bottom layer, the same characteristics as before were maintained.

本發明之一態樣之觸控面板係配置於顯示面板上,且觸摸操作面來操作之靜電電容方式者,且具有:透明基板;於上述透明基板之上述操作面之背面側於X方向形成之複數個X電極;以及於與上述X方向正交之Y方向形成之複數個Y電極。上述複數個X電極與上述複數個Y電極具有:形成於上述背面側之同一面之複數個透明電極;以及於上述X電極與上述Y電極經由絕緣部相互交叉之交叉部,立體連接相鄰之上述X電極之透明電極或相鄰之上述Y電極之透明電極中之任一者之跳線。上述跳線具有與上述透明電極連接之第一層及積層於該第一層之第二層。上述第一層包括第一金屬氧化膜,上述第二層包括第二金屬氧化膜。上述第一層之折射率低於上述第二層之折射率。 A touch panel of one aspect of the present invention is an electrostatic capacitance method that is arranged on a display panel and is operated by touching an operation surface, and has: a transparent substrate; formed on the back side of the operation surface of the transparent substrate in the X direction A plurality of X electrodes; and a plurality of Y electrodes formed in a Y direction orthogonal to the X direction. The plurality of X electrodes and the plurality of Y electrodes have: a plurality of transparent electrodes formed on the same surface of the back surface side; and an intersection portion where the X electrode and the Y electrode cross each other via an insulating portion, and three-dimensionally connect adjacent ones. A jumper of any one of the transparent electrode of the X electrode or the transparent electrode of the adjacent Y electrode. The jumper has a first layer connected to the transparent electrode and a second layer laminated on the first layer. The first layer includes a first metal oxide film, and the second layer includes a second metal oxide film. The refractive index of the first layer is lower than the refractive index of the second layer.

根據上述觸控面板,自視認側觀察時,能夠相對於可見光之整個波長區域降低交叉部之反射率,並且均勻地抑制反射率。 According to the touch panel described above, when viewed from the viewing side, the reflectance of the crossing portion can be reduced with respect to the entire wavelength region of visible light, and the reflectance can be suppressed uniformly.

較佳為上述第一層中之含氧率高於上述第二層中之含氧率。 Preferably, the oxygen content in the first layer is higher than the oxygen content in the second layer.

於該情形時,能夠於交叉部獲得所期望之反射率。 In this case, a desired reflectance can be obtained at the intersection.

較佳為上述第一層中之比電阻高於上述第二層中之比電阻。 Preferably, the specific resistance in the first layer is higher than the specific resistance in the second layer.

於該情形時,能夠於交叉部獲得所期望之反射率。 In this case, a desired reflectance can be obtained at the intersection.

較佳為上述第一層與上述第二層為相同金屬之氧化物。 The first layer and the second layer are preferably oxides of the same metal.

於該情形時,能夠於交叉部獲得所期望之反射率。 In this case, a desired reflectance can be obtained at the intersection.

較佳為上述第一層與上述第二層為含有1~15atm%之鈮之鉬合金之氧化物。 Preferably, the first layer and the second layer are oxides of a molybdenum alloy containing 1 to 15 atm% of niobium.

於該情形時,能夠於交叉部獲得所期望之反射率。 In this case, a desired reflectance can be obtained at the intersection.

較佳為於將上述第一金屬氧化膜及第二金屬氧化膜中之複折射率定義為m=n-ik(n為折射率,k為消光係數)時,於構成上述第一層之上述第一金屬氧化膜中,2.0≦n1≦2.2 Preferably, when the complex refractive index in the first metal oxide film and the second metal oxide film is defined as m = n-ik (n is the refractive index and k is the extinction coefficient), In the first metal oxide film, 2.0 ≦ n1 ≦ 2.2

0.015≦k1≦0.1;於構成上述第二層之上述第二金屬氧化膜中,2.5≦n2≦3.8 0.015 ≦ k1 ≦ 0.1; in the second metal oxide film constituting the second layer, 2.5 ≦ n2 ≦ 3.8

0.3≦k2≦3.0。 0.3 ≦ k2 ≦ 3.0.

較佳為上述跳線具有積層於上述第二層之包括第三金屬膜之第三層。 Preferably, the jumper has a third layer including a third metal film laminated on the second layer.

較佳為上述第三層包括鋁或鋁合金。 Preferably, the third layer includes aluminum or an aluminum alloy.

較佳為上述跳線具有積層於上述第三層之包括第四金屬膜之第四層。 Preferably, the jumper has a fourth layer including a fourth metal film laminated on the third layer.

上述第四層亦可包括鉬或鉬合金。 The fourth layer may also include molybdenum or a molybdenum alloy.

根據上述本發明之態樣,藉由如上所述構成交叉部,能夠於可見光區域實現大致均勻之反射率來提高視認性,並且於可見光區域之整個區域使反射率成為10%以下,從而保證色調之準確性。 According to the aspect of the present invention, by forming the crossing portion as described above, it is possible to achieve a substantially uniform reflectance in the visible light region to improve visibility, and to make the reflectance less than 10% in the entire visible light region, thereby ensuring color tone. Accuracy.

2‧‧‧透明覆蓋片 2‧‧‧ transparent cover

10‧‧‧觸控面板 10‧‧‧Touch Panel

11‧‧‧透明基板 11‧‧‧ transparent substrate

11A‧‧‧操作面 11A‧‧‧Control surface

11b‧‧‧背面 11b‧‧‧Back

12‧‧‧透明電極 12‧‧‧ transparent electrode

12X‧‧‧X電極 12X‧‧‧X electrode

12X-X、12Y-Y‧‧‧電極 12X-X, 12Y-Y‧‧‧ electrodes

12Xa、12Ya‧‧‧細線部 12Xa, 12Ya‧‧‧Thin line section

12Xb、12Yb‧‧‧焊墊部 12Xb, 12Yb ‧‧‧ Pad Department

12Y‧‧‧Y電極 12Y‧‧‧Y electrode

13‧‧‧絕緣部 13‧‧‧Insulation Department

13A‧‧‧保護膜 13A‧‧‧Protective film

14‧‧‧交叉部 14‧‧‧ Cross

15‧‧‧跳線 15‧‧‧ Jumper

16‧‧‧有效觸控區域 16‧‧‧ Effective touch area

17‧‧‧配線部 17‧‧‧ Wiring Department

A3‧‧‧鋁-釹膜(第三層) A3‧‧‧Aluminum-Neodymium film (third layer)

L1‧‧‧單色儀 L1‧‧‧ Monochromator

LS‧‧‧測定器 LS‧‧‧Tester

M1‧‧‧下鉬-鈮氧化積層膜(第一層) M1‧‧‧molybdenum-niobium oxide laminated film (first layer)

M2‧‧‧上鉬-鈮氧化積層膜(第二層) M2‧‧‧Molybdenum-Niobium Oxide Laminated Film (Second Layer)

M4‧‧‧鉬-鈮膜(第四層) M4‧‧‧Molybdenum-Niobium film (fourth layer)

圖1係模式性表示本發明之一實施形態之觸控面板的俯視圖。 FIG. 1 is a plan view schematically showing a touch panel according to an embodiment of the present invention.

圖2係表示本發明之一實施形態之觸控面板之剖視圖。 FIG. 2 is a cross-sectional view showing a touch panel according to an embodiment of the present invention.

圖3係表示本發明之一實施形態之觸控面板中之交叉部附近的放大剖視圖。 FIG. 3 is an enlarged cross-sectional view showing the vicinity of an intersection in a touch panel according to an embodiment of the present invention.

圖4係本發明之一實施形態之觸控面板之跳線處之膜的構成例以及表示片電阻評價及反射率評價的概念圖。 4 is a configuration example of a film at a jumper line of a touch panel according to an embodiment of the present invention and a conceptual diagram showing sheet resistance evaluation and reflectance evaluation.

圖5係表示有關本發明之一實施形態之觸控面板之測定結果的曲線圖。 5 is a graph showing measurement results of a touch panel according to an embodiment of the present invention.

圖6係表示有關本發明之一實施形態之觸控面板之實驗例的曲線圖。 FIG. 6 is a graph showing an experimental example of a touch panel according to an embodiment of the present invention.

圖7係表示有關本發明之一實施形態之觸控面板之模擬結果的曲線圖。 FIG. 7 is a graph showing a simulation result of a touch panel according to an embodiment of the present invention.

圖8係表示有關本發明之一實施形態之觸控面板之模擬結果的曲線圖。 FIG. 8 is a graph showing a simulation result of a touch panel according to an embodiment of the present invention.

以下,基於圖式對本發明之一實施形態之觸控面板進行說明。 Hereinafter, a touch panel according to an embodiment of the present invention will be described based on the drawings.

圖1係示意地表示本實施形態之觸控面板之俯視圖,圖2係表示觸控面板之剖視圖,圖3係表示觸控面板中之交叉部附近之放大剖視圖。 FIG. 1 is a plan view schematically showing a touch panel according to this embodiment, FIG. 2 is a cross-sectional view of the touch panel, and FIG. 3 is an enlarged cross-sectional view near a crossing portion in the touch panel.

如圖1、圖2所示,本實施形態之觸控面板10係配置於液晶或有機EL等顯示面板2上,且觸摸操作面11A來操作之靜電電容方式者,且該觸控面板具有:透明基板11;於透明基板11之操作面11A之背面11b側於X方向形成之複數個X電極12X;以及於與X方向正交之Y方向形成之複數個Y電極12Y。 As shown in FIG. 1 and FIG. 2, the touch panel 10 of this embodiment is an electrostatic capacitance method arranged on a display panel 2 such as a liquid crystal or an organic EL and touching the operation surface 11A, and the touch panel has: A plurality of X electrodes 12X formed in the X direction on the back surface 11b side of the operation surface 11A of the transparent substrate 11; and a plurality of Y electrodes 12Y formed in the Y direction orthogonal to the X direction.

如圖1~圖3所示,本實施形態之靜電電容方式之觸控面板於透明基板11之與視認側相反側之背面11b具有:例如於Y方向延伸且於與Y方向交叉之X方向以特定之排列間距並列設置之複數個X電極;以 及與該複數個X電極交叉並於X方向延伸,且於Y方向以特定之排列間距並列設置之複數個Y電極。作為透明基板11例如使用玻璃或耐熱透明塑膠等透明基板。複數個X電極12X及複數個Y電極12Y由具有較高之透射性之材料例如ITO(Indium Tin Oxide)等透明性導電材料形成。 As shown in FIG. 1 to FIG. 3, the electrostatic capacitance type touch panel of this embodiment has a rear surface 11 b of the transparent substrate 11 on the side opposite to the viewing side. For example, the touch panel extends in the Y direction and crosses the Y direction in the X direction. A plurality of X electrodes arranged side by side at a specific arrangement pitch; And a plurality of Y electrodes that intersect with the plurality of X electrodes and extend in the X direction, and are arranged side by side at a specific arrangement pitch in the Y direction. As the transparent substrate 11, a transparent substrate such as glass or heat-resistant transparent plastic is used. The plurality of X electrodes 12X and the plurality of Y electrodes 12Y are formed of a material having high transmittance, such as a transparent conductive material such as ITO (Indium Tin Oxide).

複數個X電極12X與複數個Y電極12Y具有:形成於背面11b側之同一面之複數個透明電極12;以及於X電極12X與Y電極12Y經由絕緣部13相互交叉之交叉部14,立體連接相鄰之X電極12X之透明電極12或相鄰之Y電極12Y之透明電極12中之任一者之跳線15。 The plurality of X electrodes 12X and the plurality of Y electrodes 12Y have: a plurality of transparent electrodes 12 formed on the same surface of the back surface 11b side; and an intersection 14 where the X electrodes 12X and the Y electrodes 12Y cross each other via the insulating portion 13 and are connected in three dimensions Jumper 15 of any one of the transparent electrode 12 of the adjacent X electrode 12X or the transparent electrode 12 of the adjacent Y electrode 12Y.

配置有複數個Y電極12Y及X電極12X之區域為有效觸控區域16,如圖1所示,於該有效觸控區域16之周圍配置有分別自複數個Y電極與複數個X電極向縱橫方向之周邊部導出配線直至端子部(未圖示)之複數個配線部17。 The area where the plurality of Y electrodes 12Y and the X electrodes 12X are arranged is the effective touch area 16, as shown in FIG. 1. Around the effective touch area 16, there are arranged a plurality of Y electrodes and a plurality of X electrodes to the vertical and horizontal directions, respectively. The peripheral portions in the direction lead out a plurality of wiring portions 17 to the terminal portion (not shown).

於複數個X電極中,分別以於Y方向交替配置複數個之電極圖案形成有細線部12Xa及寬度較該細線部12Xa之寬度更寬之焊墊部12Xb。於複數個Y電極中,分別以於X方向交替配置複數個之電極圖案形成有細線部12Ya及寬度較該細線部12Ya之寬度更寬之焊墊部12Yb。 A thin line portion 12Xa and a pad portion 12Xb having a width wider than the width of the thin line portion 12Xa are formed in the plurality of X electrodes by alternately arranging a plurality of electrode patterns in the Y direction. A thin line portion 12Ya and a pad portion 12Yb having a width wider than the width of the thin line portion 12Ya are formed in the plurality of Y electrodes in a plurality of electrode patterns arranged alternately in the X direction.

於俯視觀察時,Y電極12Y之焊墊部12Yb配置於相鄰之2個X電極12X之細線部12Xa之間,X電極12X之焊墊部12Xb配置於相鄰之2個Y電極12Y之細線部12Ya之間。 In a plan view, the pad portion 12Yb of the Y electrode 12Y is disposed between the thin line portions 12Xa of the two adjacent X electrodes 12X, and the pad portion 12Xb of the X electrode 12X is disposed between the thin lines of the two adjacent Y electrodes 12Y. Department 12Ya.

並且,絕緣部13由例如包括SiO、SiN、SiON或樹脂之膜構成。 The insulating portion 13 is made of, for example, a film including SiO, SiN, SiON, or a resin.

於交叉部14,作為Y電極12Y之細線部12Ya之跳線15及配線部(配線)17如圖1~圖3所示成為相同構成之多層結構,並且減小與透明電極12或絕緣部13之界面處之自視認側觀察時之反射率,從而使反射特性最佳化,並且增強跳線15及配線部17中之導電性。 At the cross section 14, the jumper 15 and the wiring section (wiring) 17 as the thin wire section 12Ya of the Y electrode 12Y have a multilayer structure having the same structure as shown in FIG. 1 to FIG. The reflectance when viewed from the self-recognition side at the interface is to optimize the reflection characteristics and enhance the conductivity in the jumper 15 and the wiring portion 17.

如圖4所示,跳線15成為自透明基板11側依序積層下鉬-鈮氧化積 層膜(第一層)M1、上鉬-鈮氧化積層膜(第二層)M2、鋁-釹膜(第三層)A3以及鉬-鈮膜(第四層)M4之結構。 As shown in FIG. 4, the jumper 15 becomes a molybdenum-niobium oxide product under the sequential stacking from the transparent substrate 11 side The structure of the layer film (first layer) M1, the upper molybdenum-niobium oxide laminated film (second layer) M2, the aluminum-neodymium film (third layer) A3, and the molybdenum-niobium film (fourth layer) M4.

第一層M1及第二層M2包括例如成為鉬之相同金屬之氧化物,即第一金屬氧化膜及第二金屬氧化膜,第一層M1及第二層M2含有1~15atm%之鈮。於第一層M1及第二層M2中,第一層M1之折射率低於第二層M2之折射率,第一層M1中之含氧率高於第二層M2中之含氧率,第一層M1中之比電阻高於第二層M2中之比電阻。 The first layer M1 and the second layer M2 include, for example, an oxide of the same metal that becomes molybdenum, that is, a first metal oxide film and a second metal oxide film. The first layer M1 and the second layer M2 contain 1 to 15 atm% of niobium. In the first layer M1 and the second layer M2, the refractive index of the first layer M1 is lower than that of the second layer M2, and the oxygen content in the first layer M1 is higher than that in the second layer M2. The specific resistance in the first layer M1 is higher than that in the second layer M2.

於第一層M1及第二層M2中,於將複折射率定義為m=n-ik(n為折射率,k為消光係數)時,於構成第一層M1之第一金屬氧化膜中,2.0≦n1≦2.2 In the first layer M1 and the second layer M2, when the complex refractive index is defined as m = n-ik (n is the refractive index and k is the extinction coefficient), in the first metal oxide film constituting the first layer M1 , 2.0 ≦ n1 ≦ 2.2

0.015≦k1≦0.1;於構成第二層M2之第二金屬氧化膜中,2.5≦n2≦3.8 0.015 ≦ k1 ≦ 0.1; in the second metal oxide film constituting the second layer M2, 2.5 ≦ n2 ≦ 3.8

0.3≦k2≦3.0。 0.3 ≦ k2 ≦ 3.0.

第三層A3能夠包括鋁或者含釹之鋁合金。 The third layer A3 can include aluminum or an aluminum alloy containing neodymium.

第四層M4成為與第一層M1及第二層M2相同金屬之膜,且包括鉬或鉬合金。 The fourth layer M4 becomes a film of the same metal as the first layer M1 and the second layer M2, and includes molybdenum or a molybdenum alloy.

藉由如此設定跳線15之膜構成,能夠達成藉由光之干涉效應減小自視認側觀察時之反射率。 By setting the film configuration of the jumper 15 in this way, it is possible to reduce the reflectance when viewed from the self-recognition side by the interference effect of light.

此處,作為各膜M1、M2、A3、M4之膜厚等特性,能夠如下列舉一例來進行設定。另外,此處,作為被積層之跳線15之電子特性,表示片電阻Rs[Ω/□]。另外,作為各層之膜厚,能夠設為圖4所記載之值之±10%之範圍。進而,能夠設為第一層M1:20~40nm,第二層M2:40~50nm。 Here, the characteristics such as the film thickness of each of the films M1, M2, A3, and M4 can be set as examples below. Here, as the electronic characteristics of the jumper 15 to be laminated, the sheet resistance Rs [Ω / □] is shown. The film thickness of each layer can be set within a range of ± 10% of the value described in FIG. 4. Furthermore, the first layer M1 can be set to 20 to 40 nm, and the second layer M2 can be set to 40 to 50 nm.

圖4表示本實施形態之跳線15之實際膜構成之例,係表示片電阻評價及反射率評價之概念圖。 FIG. 4 shows an example of the actual film configuration of the jumper 15 in this embodiment, and is a conceptual diagram showing the sheet resistance evaluation and the reflectance evaluation.

另外,於本實施形態之跳線15中,作為所使用之具體膜,下鉬-鈮氧化積層膜M1、上鉬-鈮氧化積層膜M2、鋁-釹膜(導電膜)A3以及鉬-鈮膜M4並不限定於表1之組成.膜厚,但就製造方面而言,金屬氧化膜M1、M2與保護金屬膜M4較佳為於基底上使用共同之金屬。 In addition, in the jumper 15 of this embodiment, as the specific film used, the lower molybdenum-niobium oxide laminated film M1, the upper molybdenum-niobium oxide laminated film M2, the aluminum-neodymium film (conductive film) A3, and the molybdenum-niobium The film M4 is not limited to the composition of Table 1. The film thickness, but from the aspect of manufacturing, it is preferable to use a common metal on the substrate for the metal oxide films M1, M2 and the protective metal film M4.

於本例中,於利用濺鍍法形成該等多層膜之情形時,以鉬-鈮、鋁-釹之雙重方式準備濺鍍靶,於進行氧化膜之成膜時,藉由導入特定量之氧氣及氬等惰性氣體之反應性濺鍍,可無需加掛源極電源。 In this example, in the case where these multilayer films are formed by the sputtering method, a sputtering target is prepared in a dual method of molybdenum-niobium and aluminum-neodymium. When the oxide film is formed, a specific amount of the film is introduced. Reactive sputtering of inert gases such as oxygen and argon eliminates the need to attach source power.

圖5係同時表示於本實施形態之金屬氧化膜M1、M2之濺鍍成膜過程中相對於氧流量比之變化之比電阻及成膜速度之變化的曲線圖。 FIG. 5 is a graph showing changes in specific resistance and film formation speed with respect to changes in the oxygen flow rate ratio during the sputtering film formation process of the metal oxide films M1 and M2 in this embodiment.

於本實施形態之跳線15中,如圖5所示構成為下鉬-鈮氧化積層膜M1中之比電阻相對於上鉬-鈮氧化積層膜M2變大。具體而言,於藉由濺鍍進行下鉬-鈮氧化積層膜M1之成膜時,自透明基板11側將下鉬-鈮氧化積層膜M1成膜至特定膜厚之後,如圖5所示減小所供給之氧氣之流量並加快成膜速度,將上鉬-鈮氧化積層膜M2成膜至特定膜厚。此處,所供給之氧氣之流量比存在閾值SO,被成膜之膜之比電阻及成膜速度以該閾值SO為界發生變化。 In the jumper 15 of this embodiment, as shown in FIG. 5, the specific resistance in the lower molybdenum-niobium oxide multilayer film M1 is larger than that of the upper molybdenum-niobium oxide multilayer film M2. Specifically, when the lower molybdenum-niobium oxide multilayer film M1 is formed by sputtering, the lower molybdenum-niobium oxide multilayer film M1 is formed from the transparent substrate 11 side to a specific film thickness, as shown in FIG. 5. The flow rate of the supplied oxygen is reduced and the film forming speed is increased, and the upper molybdenum-niobium oxide multilayer film M2 is formed to a specific film thickness. Here, there is a threshold value SO for the flow rate ratio of the supplied oxygen, and the specific resistance and film formation speed of the film to be formed are changed around the threshold value SO.

.於氧氣流量比小於閾值SO之情形時,成膜速度較高,而且比電阻較小。 . When the oxygen flow rate ratio is smaller than the threshold SO, the film formation speed is high and the specific resistance is small.

.於氧氣流量比大於閾值SO之情形時,成膜速度較低,而且比電阻非常大。 . When the oxygen flow ratio is larger than the threshold SO, the film formation speed is low and the specific resistance is very large.

具體而言,關於成膜條件中之氣體流量,較佳為於下鉬-鈮氧化積層膜M1之成膜過程中,將氬:氧流量設為200:120(sccm),並於上鉬-鈮氧化積層膜M2之成膜過程中,自該狀態變為200:80(sccm)。 Specifically, regarding the gas flow rate in the film formation conditions, it is preferable to set the argon: oxygen flow rate to 200: 120 (sccm) during the film formation of the lower molybdenum-niobium oxide multilayer film M1, and the upper molybdenum- During the formation of the niobium oxide multilayer film M2, the state was changed from 200: 80 (sccm).

另外,於本實施形態中,亦能夠構成為下鉬-鈮氧化積層膜(第一層)M1與上鉬-鈮氧化積層膜(第二層)M2之比電阻自與透明電極12連接之側向鋁-釹膜(第三層)A3側連續下降,於該情形時,亦能夠設為即便無兩個不同之比電阻值亦使比電阻根據厚度而連續發生變化之構成。 In addition, in this embodiment, the specific resistance of the lower molybdenum-niobium oxide multilayer film (first layer) M1 and the upper molybdenum-niobium oxide multilayer film (second layer) M2 can also be configured from the side connected to the transparent electrode 12 The aluminum-neodymium film (third layer) is continuously lowered to the A3 side. In this case, it can also be configured such that the specific resistance continuously changes depending on the thickness even if there are no two different specific resistance values.

對本實施形態之觸控面板之製造方法之一例進行說明。 An example of the manufacturing method of the touch panel of this embodiment is demonstrated.

本實施形態之觸控面板之製造方法包括:於透明基板11形成作為傳感器導電膜圖案之透明電極12之步驟;形成絕緣部13之步驟;以及一次形成跳線15與配線部17之步驟。 The manufacturing method of the touch panel in this embodiment includes: a step of forming a transparent electrode 12 as a sensor conductive film pattern on a transparent substrate 11; a step of forming an insulating portion 13; and a step of forming a jumper 15 and a wiring portion 17 at a time.

並且,本實施形態之觸控面板之製造方法亦能夠依序進行一次形成跳線15與配線部17之步驟、形成絕緣部13之步驟以及形成透明電極12之步驟。 In addition, the manufacturing method of the touch panel in this embodiment can also sequentially perform the steps of forming the jumper 15 and the wiring portion 17, the step of forming the insulating portion 13, and the step of forming the transparent electrode 12 in this order.

進而,作為觸控面板之製造方法之其他例,亦能夠包括:圖案形成配線部17之步驟;形成透明電極12之步驟;形成絕緣部13之步驟;以及形成跳線15之步驟。 Furthermore, as another example of the manufacturing method of the touch panel, it can also include: a step of patterning the wiring portion 17; a step of forming the transparent electrode 12; a step of forming the insulating portion 13; and a step of forming the jumper 15.

另外,於該等方法中,作為最終步驟能夠塗佈形成利用透明樹脂等之整個面均勻之保護膜13A。 In these methods, as a final step, a protective film 13A that is uniform over the entire surface using a transparent resin or the like can be applied and formed.

若對本實施形態之觸控面板之製造方法進行進一步具體說明,(a)於進行例如ITO之成膜之後,對準前一步驟之圖案位置,進行基於光刻法之光致抗蝕劑之圖案形成,經過其後之蝕刻與殘留抗蝕劑之去除,形成作為傳感器電極之透明電極12圖案。繼而,(b)塗佈用於形成絕緣部13之感光性樹脂材料,利用光刻法與交叉部14對準來進行圖案形成。繼而,(c)進行用於構成跳線15與配線部17之前述相同結構 之多層成膜,經過包括光致抗蝕劑之塗佈、曝光、顯影之光刻法以及其後之蝕刻及殘留抗蝕劑之去除,從而能夠一次形成。 If the manufacturing method of the touch panel of this embodiment is further described in detail, (a) after performing, for example, ITO film formation, the pattern position of the previous step is aligned to perform a photoresist pattern based on photolithography Forming, and then removing the remaining resist to form a pattern of the transparent electrode 12 as a sensor electrode. Then, (b) a photosensitive resin material for forming the insulating portion 13 is applied, and patterning is performed by aligning the photoresist with the crossing portion 14. Then, (c) the aforementioned same structure for constituting the jumper 15 and the wiring section 17 is performed The multilayer film can be formed at one time by a photolithography method including photoresist coating, exposure, and development, and subsequent etching and removal of residual resist.

圖6係用於將本發明之一實施形態之觸控面板之多層膜之低反射率化之效果與先前例進行比較之光譜反射率之測定結果的曲線圖。 FIG. 6 is a graph showing a measurement result of a spectral reflectance for comparing an effect of reducing a reflectance of a multilayer film of a touch panel according to an embodiment of the present invention with a previous example.

能夠利用市售之分光光度計進行光譜反射率之測定。關於測定,如圖4所示,向測定試料膜照射自光源(單色儀)L1分光之照射光,利用測定器LS接收被鏡面反射之光,從而測定光之強度。使來自單色儀L1之光譜照射光之波長連續發生變化,從而測定光譜反射率。 The measurement of the spectral reflectance can be performed using a commercially available spectrophotometer. Regarding the measurement, as shown in FIG. 4, the measurement sample film is irradiated with the irradiated light from the light source (monochromator) L1, and the light reflected by the specular surface is received by the measuring device LS to measure the intensity of the light. The wavelength of the spectrally irradiated light from the monochromator L1 is continuously changed to measure the spectral reflectance.

此處,將測定中使用之參照試料設為已知絕對反射率之特定膜。即,將以後之各測定試料中之100%基準設為將例如在鋁單層膜中獲得之強度除以已知之絕對反射率而獲得之值。 Here, the reference sample used in the measurement is a specific film having a known absolute reflectance. That is, the 100% standard in each subsequent measurement sample is set to a value obtained by dividing, for example, the intensity obtained in an aluminum single-layer film by a known absolute reflectance.

繼而,如圖4所示,作為多層膜之例,於透明基板(玻璃)11進行包括鋁-釹膜及鉬-鈮膜之多層膜之成膜,自透明基板11之與成膜面相反側之面側測定包括該鋁-釹膜、鉬-鈮膜之多層膜之光譜反射率。於圖6中用一點劃線表示其結果。 Next, as shown in FIG. 4, as an example of a multilayer film, a multilayer film including an aluminum-neodymium film and a molybdenum-niobium film is formed on a transparent substrate (glass) 11 from the opposite side of the transparent substrate 11 from the film-forming surface. The spectral reflectance of the multilayer film including the aluminum-neodymium film and the molybdenum-niobium film was measured on the front side. The result is shown by a one-dot chain line in FIG. 6.

繼而,同樣地於透明基板11成膜包括鉬氧化膜、鋁膜以及鉬膜之多層膜,自透明基板11之未進行成膜之面側測定包括鉬氧化膜、鋁膜以及鉬膜之多層膜之光譜反射率。於圖6中用虛線表示其結果。 Next, a multilayer film including a molybdenum oxide film, an aluminum film, and a molybdenum film was formed on the transparent substrate 11 in the same manner, and a multilayer film including a molybdenum oxide film, an aluminum film, and a molybdenum film was measured from the side of the transparent substrate 11 that was not filmed The spectral reflectance. The results are shown by dotted lines in FIG. 6.

而且,作為本發明之一實施形態之觸控面板之多層膜之例,於透明基板11成膜包括下鉬-鈮氧化積層膜M1、上鉬-鈮氧化積層膜M2、鋁-釹膜A3以及鉬-鈮膜M4之多層膜,自透明基板11之未進行成膜之面測定包括下鉬-鈮氧化積層膜M1、上鉬-鈮氧化積層膜M2、鋁-釹膜A3以及鉬-鈮膜M4之多層膜之光譜反射率。於圖6中用實線表示其結果。 Furthermore, as an example of a multilayer film of a touch panel according to an embodiment of the present invention, the film formed on the transparent substrate 11 includes a lower molybdenum-niobium oxide multilayer film M1, an upper molybdenum-niobium oxide multilayer film M2, and an aluminum-neodymium film A3 and The multilayer film of molybdenum-niobium film M4, measured from the surface of the transparent substrate 11 without film formation, includes a lower molybdenum-niobium oxide multilayer film M1, an upper molybdenum-niobium oxide multilayer film M2, an aluminum-neodymium film A3, and a molybdenum-niobium film Spectral reflectance of M4 multilayer film. The result is shown by a solid line in FIG. 6.

如圖6所示,與先前之多層膜比較時,構成本實施形態之多層膜 能夠於測定波長為380nm~780nm之可見光區域之整個區域將反射率抑制為10%以下,並且於可見光區域之整個區域能夠使反射率成為大致均勻之值。於日本專利特開2013-020347號公報中,關於波長未達400nm之紫外線區域之測定結果,由於在本測定結果中未顯示準確值,因此不作為參照,但於本實施形態中,能夠於測定波長為380nm~780nm之可見光之大致整個區域將反射率設為5~8%之範圍內。 As shown in FIG. 6, when compared with the previous multilayer film, the multilayer film of this embodiment is constituted The reflectance can be suppressed to 10% or less in the entire visible light region with a measurement wavelength of 380nm to 780nm, and the reflectance can be made substantially uniform in the entire visible light region. In Japanese Patent Application Laid-Open No. 2013-020347, the measurement result of the ultraviolet region with a wavelength of less than 400 nm is not used as a reference because it does not show an accurate value in this measurement result. However, in this embodiment, the measurement wavelength can be measured. The reflectance is set to a range of 5 to 8% for substantially the entire region of visible light from 380 nm to 780 nm.

圖7及圖8係表示用於對在本發明之一實施形態之觸控面板之多層膜中實現所期望之反射率之第一層及第二層之膜厚進行規定之模擬結果之CIELAB色空間的曲線圖。 FIG. 7 and FIG. 8 are CIELAB colors showing simulation results for specifying the film thicknesses of the first layer and the second layer for achieving a desired reflectance in a multilayer film of a touch panel according to an embodiment of the present invention. Graph of space.

作為滿足550nm中之反射率(R%):6%以下、色度座標a*:-5~5、b*:-5~5之膜厚範圍,能夠將第一層如圖7所示設為MoNbOx1膜厚範圍:20~40nm(標準條件:35nm),將第二層如圖8所示設為MoNbOx2膜厚範圍:40~50nm(標準條件:45nm)。此處,關於CIELAB色空間(準確為CIE1976L*a*b*色空間),於L*、a*、b*之3個軸中L*表示明度,a*、b*表示紅綠、藍黃方向之色澤。 As a film thickness range that satisfies the reflectance (R%) at 550nm: 6% or less and the chromaticity coordinates a *: -5 to 5, b *: -5 to 5, the first layer can be set as shown in FIG. 7 The MoNbOx1 film thickness range is 20 to 40 nm (standard conditions: 35 nm), and the second layer is set to the MoNbOx2 film thickness range: 40 to 50 nm (standard conditions: 45 nm) as shown in FIG. 8. Here, regarding the CIELAB color space (accurately CIE1976L * a * b * color space), in the three axes of L *, a *, b *, L * represents lightness, a *, b * represents red-green, blue-yellow Color of direction.

與此相對,於圖6所示之先前例中,成為L*:35,a*:0.54,b*:-13.5(藍色)。 On the other hand, in the previous example shown in FIG. 6, it becomes L *: 35, a *: 0.54, and b *:-13.5 (blue).

根據該結果可知,於先前例中,色澤偏離色度座標a*:-5~5、b*:-5~5,而於本發明之一實施形態之觸控面板之多層膜中,色調並未改變。 According to the results, it can be seen that in the previous example, the color and luster deviate from the chromaticity coordinates a *:-5 ~ 5, b *:-5 ~ 5, and in the multilayer film of the touch panel according to an embodiment of the present invention, the color tone is Unchanged.

繼而,於(表2)中表示將本發明之一實施形態之觸控面板之多層膜與先前之多層膜進行綜合比較之結果。按各評價項目,於表中用○(OK)/×(NG)表示針對判定基準之良否判定。與先前之多層膜相比可知,本發明之一實施形態之觸控面板之多層膜於可見光之380~780nm波長區域之整個區域中之反射率顯示顯著之改善,另一方面,關於蝕刻時間、片電阻值以及與底層之密接性之各種項目為同等。 Next, the results of a comprehensive comparison between the multilayer film of the touch panel according to one embodiment of the present invention and the previous multilayer film are shown in (Table 2). For each evaluation item, good (OK) / × (NG) is used in the table to indicate whether the judgment is good or not. Compared with the previous multilayer film, it can be seen that the reflectance of the multilayer film of a touch panel according to an embodiment of the present invention in the entire region of the wavelength range of 380 to 780 nm of visible light shows a significant improvement. On the other hand, regarding the etching time, The chip resistance value and various items of adhesion to the bottom layer are equivalent.

根據上述本發明之實施形態,能夠用簡單之方法使透明基材與多層膜之配線圖案之界面低反射率化,並且提高可見光區域中之反射率之均勻性,從而減小自視認側觀察之相對於配線圖案之視認性。考慮到根據同樣之方案提高與其他電子零件等之顯示性能有關之特性品質。例如,能夠提高包括用於使透明導電膜進一步低電阻化之金屬層之輔助配線圖案之視認性。並且,以通常與顯示裝置相關之配線為代表,能夠擴大能夠將金屬層應用於電子零件中之各種配線圖案之範圍,從而能夠大幅提高製品設計之自由度。 According to the embodiment of the present invention described above, the interface between the transparent substrate and the wiring pattern of the multilayer film can be reduced in reflectivity by a simple method, and the uniformity of the reflectance in the visible light region can be improved, thereby reducing the self-recognition side observation. Visibility with respect to wiring pattern. It is considered to improve the characteristic quality related to the display performance of other electronic parts and the like according to the same scheme. For example, the visibility of the auxiliary wiring pattern including the metal layer for further reducing the resistance of the transparent conductive film can be improved. In addition, as represented by wiring generally associated with display devices, the range of various wiring patterns in which metal layers can be applied to electronic parts can be expanded, and the degree of freedom in product design can be greatly improved.

Claims (10)

一種觸控面板,其係配置於顯示面板上,觸摸操作面來操作之靜電電容方式之觸控面板,且具有:透明基板;於上述透明基板之上述操作面之背面側於X方向形成之複數個X電極;以及於與上述X方向正交之Y方向形成之複數個Y電極;上述複數個X電極與上述複數個Y電極具有:形成於上述背面側之同一面之複數個透明電極;以及於上述X電極與上述Y電極經由絕緣部相互交叉之交叉部,立體連接相鄰之上述X電極之透明電極或相鄰之上述Y電極之透明電極中之任一者之跳線;上述跳線具有與上述透明電極連接之第一層及積層於該第一層之第二層,上述第一層包括第一金屬氧化膜,上述第二層包括第二金屬氧化膜,上述第一層之折射率低於上述第二層之折射率。A touch panel is an electrostatic capacitance type touch panel which is arranged on a display panel and touches an operation surface to operate. The touch panel has a transparent substrate and a plurality of X-directions formed on the back side of the operation surface of the transparent substrate. X electrodes; and a plurality of Y electrodes formed in a Y direction orthogonal to the X direction; the plurality of X electrodes and the plurality of Y electrodes have: a plurality of transparent electrodes formed on the same surface of the back surface side; and A jumper that connects one of the transparent electrode of the adjacent X electrode or the transparent electrode of the adjacent Y electrode at an intersection where the X electrode and the Y electrode cross each other via an insulating portion; the jumper A first layer connected to the transparent electrode and a second layer laminated on the first layer, the first layer includes a first metal oxide film, the second layer includes a second metal oxide film, and the refraction of the first layer The rate is lower than the refractive index of the second layer. 如請求項1之觸控面板,其中上述第一層中之含氧率高於上述第二層中之含氧率。The touch panel of claim 1, wherein the oxygen content in the first layer is higher than the oxygen content in the second layer. 如請求項1或2之觸控面板,其中上述第一層中之比電阻高於上述第二層中之比電阻。For example, the touch panel of claim 1 or 2, wherein the specific resistance in the first layer is higher than the specific resistance in the second layer. 如請求項1或2之觸控面板,其中上述第一層與上述第二層為相同金屬之氧化物。For example, the touch panel of claim 1 or 2, wherein the first layer and the second layer are oxides of the same metal. 如請求項4之觸控面板,其中上述第一層與上述第二層為含有1~15atm%之鈮之鉬合金氧化物。The touch panel according to claim 4, wherein the first layer and the second layer are molybdenum alloy oxides containing 1-15 atm% of niobium. 如請求項1或2之觸控面板,其中於將上述第一金屬氧化膜及第二金屬氧化膜中之複折射率定義為m=n-ik(n為折射率,k為消光係數)時,於構成上述第一層之上述第一金屬氧化膜中,2.0≦n≦2.2 0.015≦k≦0.1;於構成上述第二層之上述第二金屬氧化膜中,2.5≦n≦3.8 0.3≦k≦3.0。For example, the touch panel of claim 1 or 2, wherein when the complex refractive index in the first metal oxide film and the second metal oxide film is defined as m = n-ik (n is a refractive index, k is an extinction coefficient) In the first metal oxide film constituting the first layer, 2.0 ≦ n ≦ 2.2 0.015 ≦ k ≦ 0.1; in the second metal oxide film constituting the second layer, 2.5 ≦ n ≦ 3.8 0.3 ≦ k ≦ 3.0. 如請求項1或2之觸控面板,其中上述跳線具有積層於上述第二層之包括第三金屬膜之第三層。For example, the touch panel of claim 1 or 2, wherein the jumper has a third layer including a third metal film laminated on the second layer. 如請求項7之觸控面板,其中上述第三層包括鋁或鋁合金。The touch panel of claim 7, wherein the third layer includes aluminum or an aluminum alloy. 如請求項7之觸控面板,其中上述跳線具有積層於上述第三層之包括第四金屬膜之第四層。The touch panel of claim 7, wherein the jumper has a fourth layer including a fourth metal film laminated on the third layer. 如請求項9之觸控面板,其中上述第四層包括鉬或鉬合金。The touch panel of claim 9, wherein the fourth layer includes molybdenum or a molybdenum alloy.
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