KR102388979B1 - Touch sensor arrangement - Google Patents

Abstract

The present invention relates to a touch sensor device having an optically transparent electrically insulating substrate, at least one optically transparent electrically conductive sensor member disposed on the substrate, and at least one contact structure for electrically contacting the optically transparent sensor member. it's about The contact structure is a compositional formula Mo _a X _b O _c N _d with b≥0 (wherein X is an element selected from the group consisting of niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium or a plurality of elements combination) with It has at least one layer made of a metal oxynitride.

Description

Touch sensor device {TOUCH SENSOR ARRANGEMENT}

The present invention relates to a touch sensor device having an optically transparent electrically insulating substrate, at least one optically transparent electrically conductive sensor member disposed on the substrate, and at least one contact structure for electrically contacting the optically transparent sensor member. is about

Touch sensors are used, for example, in various electronic devices such as navigation systems, photocopiers, PC systems, or, in many cases, mobile phones, smart phones, tablet PCs, personal digital assistants (PDAs), portable music players, etc. . In this regard, the touch sensor is usually disposed on or integrated into a display unit, for example a liquid crystal (LCD) or OLED (organic light-emitting diode) display screen, to constitute a so-called touch panel, also called a touch screen. Such a touch panel enables a user to intuitively operate an electronic device, and the user communicates with the electronic device by touching the surface of the touch sensor using a finger, pen, or another object.

Various physical methods for detecting a touch point based on, for example, optical, acoustic, resistive or capacitive detection are known. Most of the touch panels available on the market are based on resistive (resistive) or capacitive sensing. The basic structure of the capacitive touch sensor device consists of at least two electrically conductive layers applied on an electrically insulating substrate and selectively operable and functioning as electrodes of the touch sensor. When a dielectric or electrical conductor is placed in the immediate vicinity of the sensor, it causes a capacitance change between the two electrically conductive layers, which can be detected and analyzed using the corresponding analysis device. The two electrically conductive layers may be applied to opposite surfaces of the substrate or, for example, to one side of the substrate as described in JP2013/20347. When disposed on one surface of a substrate, the electrodes are typically disposed in a two-dimensional grid in which individual electrodes are vertically crossed in a grid arrangement, and are separated from each other by an electrical insulating layer at the overlapping point.

In order to apply the touch sensor to the touch screen, the touch sensor should be implemented transparently in an optical range so that the user can see the display unit as much as possible without being disturbed. For this purpose, electrodes are fabricated from transparent conductive oxides (TCO), electrically conductive polymer films or similar materials, for example indium-tin oxide (ITO), indium-zinc oxide (IZO) or aluminum-zinc oxide (AZO). it is known to do Due to the low conductivity of these materials and the difficulty in the manufacturing process, in practical applications, it is necessary to connect the electrodes by a metal contact structure, also called a metal bridge, at the location where they intersect. In the simplest variant, these connecting contact structures consist of a single layer made of good conductivity Al, Mo, Cu, Ag or Au or alloys based on these metals. Multilayer embodiments are also known. In particular, in order to improve the adhesion of the contact structure to the transparent electrode, Mo _x Ta _y (see US2011/0199341 A1) or Mo It is possible to provide a metal interlayer made of _x Nb _y .

Although the metal contact structure increases the electrical conductivity to a sufficient degree for the function of the touch screen, there is a disadvantage that the appearance of the touch screen is damaged due to their reflective properties in the optical visible range. Users may see the metal structure in ambient light because the metal structure greatly reflects the ambient light when the display is dimmed in the touchscreen's inactive state. In order to suppress these unwanted reflections, it is known to integrally configure a light absorbing layer made of a metal oxide such as MoO _x , Mo _x Ta _y O _z or Mo _x Nb _y O _z in the contact structure. JP2013/20347 discloses a multilayer contact structure comprising a metal layer such as Mo and a light absorbing layer made of a metal oxide such as MoO _x , wherein the light absorption oxide layer overlaps the metal layer to suppress some of the unwanted reflection.

Typically, both the electrically conductive layer and the contact structure of the thin film are prepared by vapor deposition using a suitable sputtering target, and then the individual layers are structured by photolithography together with a wet chemical etching process. In order to produce the multilayer contact structure, it is advantageous that the materials of the individual layers of the contact structure have similar etching rates, in which case the etching process can be performed in one step and there is no need to adapt the etching medium to the structuring of the individual layers. This is because the manufacturing cost can be reduced. In particular, in the case of Mo/MoO _x mentioned above, the etching properties are not satisfactory, because the etching rate of the oxide layer MoO _x is the etching rate of the metal layer (in the phosphoric acid, acetic acid and nitric acid-based etchants commonly used in the manufacturing process). because it is very different from

Besides the optical requirements and favorable etching behavior, the contact structure has to fulfill additional requirements. Mobile devices are subjected to high stresses, especially during operation, by environmental influences (corrosion, moisture, sweat, etc.) and corrosion or other reactions can damage the contact structure, which can change electrical properties and reduce the functionality of the touch sensor. there is.

In short, the contact structure in the touch sensor must satisfy various electrical, chemical and optical requirements. For sufficient measurement precision and measurement speed of the sensor, the contact structure must have sufficiently high electrical conductivity and implement as low a boundary resistance as possible with the transparent electrically conductive electrode to be contacted. In addition, the contact structure should not be visually recognizable by the user when it is in an operating state with the indicator disposed on its rear side or when the indicator is not in the operating state or possibly by the user. Furthermore, the materials used must have high corrosion resistance and resistance to external influences, while the material of the contact structure must be well processed, ie, well etched, or have good etching behavior during manufacturing by an etching method. Also, in the case of multi-layer contact structures, the etching properties of the materials used in the individual layers should be similar to make them more cost-effective.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a touch sensor device having a contact structure that has as much advantageous properties as possible in relation to the above-mentioned requirements.

The object is achieved by a touch sensor device according to claim 1 . Other advantageous embodiments can be learned from the dependent claims. A method of manufacturing a touch sensor display unit and a contact structure of a touch sensor device according to the present invention is also a part of the present invention.

A touch sensor device according to the present invention has an optically transparent electrically insulating substrate on which at least one optically transparent electrically conductive sensor member is disposed. A plurality of sensor elements are typically provided that enable selective electrical actuation and enable precise location of touches. Furthermore, the touch sensor device has at least one contact structure for electrically contacting an optically transparent electrically conductive sensor member or members, wherein according to the invention the contact structure comprises at least one layer made of a metal oxynitride have In this case, the oxynitride-forming metal is a mixture containing, in addition to molybdenum or molybdenum, one element or a combination of multiple elements selected from the group consisting of the elements niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium. am. Accordingly, the metal oxynitride has a composition formula of Mo _a X _b O _c N _d type, wherein X is an element selected from the group consisting of Nb, Ta, V, W, Cr, Re, Hf, Ti and Zr, or It is a combination of a plurality of elements selected from the group consisting of Nb, Ta, V, W, Cr, Re, Hf, Ti and Zr. The formula Mo _a X _b O _c N _d cannot be understood as a chemical formula in the strict sense and is a simple expression of the relative atomic composition of the metal oxynitride. Thus, the exponents a, b, c and d are expressed in atomic percent, resulting in a sum of 1. Since X need not be present, the relative proportion of b can be zero. Preferably X is niobium or tantalum. Alternatively, it is preferred that b=0. It should be noted that the metal oxynitride need not be of an ultrapure composition, and impurities with other elements may be present. In this case, the reflectivity of the layer made of the metal oxynitride is less than 20%, in particular less than 10%.

"Touch" is understood not only as direct contact by direct physical contact, but also as the approach of an object close to the sensor member. Accordingly, the touch sensor device may be understood as a device that detects not only when the touch sensor member is touched by using a finger, a stylus, or another object, but also when the touch sensor member is brought close to the touch sensor device. The touch sensor member may be particularly configured for capacitive or resistive detection of a touch.

"Optically transparent" is understood to mean that each layer or structure is substantially transmissive for the entire visible light electromagnetic spectrum or a portion thereof.

"Reflectivity" is understood as the ratio between the luminous flux and the incident luminous flux. Diffuse reflected light or backscattered light is also considered in the reflected light flux. This is a photometric dimension that characterizes the reflectivity of a layer taking into account the wavelength-dependent sensitivity of the human eye (photopic vision in the case of sunlight). In the first approximation, the reflectance (R) expressed in % at 550 nm was used to measure the reflectance of the layer prepared according to the present invention. At this wavelength, the sensitivity of the human eye (brightness sensitivity, V-lambda curve) is the highest.

The optically transparent electrically conductive sensor member may include a transparent conductive oxide (TCO) such as indium-tin oxide (ITO), indium-zinc oxide (IZO) or aluminum-zinc oxide (AZO), PEDOT:PSS (poly(3,4) -ethylenedioxythiophene) poly(styrenesulfonate)), carbon nanotubes or transparent conductive polymers such as graphene.

The use of metal oxynitrides in the layer or intermediate layer of the contact structure is advantageous both in terms of application (favorable optical reflection behavior, sufficiently high electrical conductivity) and in terms of fabrication of touch sensor devices. The layers of the touch sensor device are typically first deposited over a large area by a known thin film coating technique such as PVD (physical vapor deposition) or CVD (chemical vapor deposition) on a substrate and then structured by a photolithography process. and further processing with a subsequent etching process. In this case, the layer made of the metal oxynitride may be deposited using a metal target made of molybdenum or a molybdenum alloy while supplying oxygen and nitrogen as reactive gases (so-called reactive sputtering). In addition, when nitrogen is used, the stability and reproducibility of the coating process is lower than that of the metal oxide layer manufacturing process (as proposed in, for example, JP2013/20347), which is performed only when oxygen is supplied and reacts extremely sensitively to changes in process parameters. is improved The etching properties of the layer made of the metal oxynitride may be mentioned as another advantageous property in the fabrication process. The layer made of the metal oxynitride exhibits good etching properties in a mixture of phosphoric acid, nitric acid, and acetic acid used for industrial purposes, and thus can be well structured by a wet chemical etching method conventional for industry.

A metal oxynitride layer with an oxygen to nitrogen ratio (atomic percent) of 3:1 to 9:1, i.e. at least 3 to 9 times more oxygen atoms than nitrogen atoms in the layer, has reflective properties, electrical conductivity and phosphoric acid, It has been found that overall particularly advantageous properties with respect to etching properties in mixtures prepared with nitric acid and acetic acid are shown. That is, 3≤c/d≤9 is applied to the layer made of Mo _a X _b O _c N _d . Individual material properties can be optimized by varying the oxygen or nitrogen ratio. While pure molybdenum nitride exhibits distinct metallic properties with respect to their electrical properties (electrical conductivity is smaller than that of metals, but electrical resistance is variable within the range of metal conductors, molybdenum nitride reflects significantly in the optical range), The electrical properties of pure molybdenum oxide with a suitable substoichiometric ratio of oxygen deviates greatly therefrom, for example as suggested in JP2013/20347 for this application. They are dark, have low reflectivity in the optical range, have lower electrical conductivity and are characterized by ionic conduction. It has been found that by partially replacing oxygen atoms with nitrogen atoms, advantageous properties of molybdenum oxide can be obtained with respect to maintaining or improved optical reflection behavior required for application to touch sensors (electrical resistance Rs≤3000 Ω/area). ). At the same time, a degree of freedom is obtained by a variable ratio of nitrogen to oxygen, and by using it, the etching rate of molybdenum oxynitride can be changed in a predetermined range, and it can be adjusted to the etching rate of molybdenum or molybdenum alloy.

In a preferred embodiment, the following relations apply for the metal oxynitride layer Mo _a X _b O _c N _d : 0≤b≤0.25a; 0.5≤c≤0.75; 0.01≤d≤0.2 and a+b+c+d=1 and c+d≤0.8. Particularly preferably, for the metal oxynitride layer, the relation 0≤b≤0.2a; 0.55≤c≤0.7; 0.01≤d≤0.15 and a+b+c+d=1 and c+d≤0.8 apply, in which case the above-mentioned advantages can be achieved to a particularly significant extent.

The contact structure may have, in addition to the layer made of metal oxynitride, one or more further layers made of one or more other materials, in a preferred variant the contact structure comprises a plurality of layers, in particular two or three layers. is composed In addition to the layer made of the metal oxynitride, the contact structure may be Al, Mo, Cu, Ag or Au or an alloy based on one of these metals (the substrate means that the main component ratio of the alloy is more than 90 atomic percent) Higher electrical conductivity of the contact structure can be obtained by having a metal layer made of In this case, the layer made of the metal oxynitride is mounted in front of the metal layer (in the direction in which the user faces the touch sensor device) to obtain an advantageous reflective behavior of the touch sensor device. The reflective properties of the contact structure can be further optimized by taking advantage of the interference effect by varying the layer thickness of the metal oxynitride layer.

In an embodiment according to the present invention, the touch sensor device may be implemented for detecting a resistive film (ie, resistance) of a touch point or a capacitive method. The touch sensor device is preferably implemented as a projected capacitive touch sensor as described for example in JP2013/20347. In this case, the touch sensor device is divided into two groups and has a plurality of sensor members disposed in a grid and functioning as electrodes of the touch sensor. Arrangement within the grid is understood to mean that the touch sensor members are arranged at different positions on the surface of the substrate in a predetermined pattern, for example on a chessboard. However, the grid is not limited to a vertical arrangement. Accordingly, the plurality of first sensor electrodes are disposed at different positions in the first direction and the plurality of second sensor electrodes are disposed at different positions in the second direction, and the sensor electrodes are respectively separated from each other at the intersection by the electrical insulating layer. has been A group of sensor electrodes is intercepted at the intersection point by an electrically insulating layer. The contact structure with the metal oxynitride connects or contacts these electrodes, which are originally electrically isolated.

In addition to connecting the transparent electrodes at their intersections, the contact structure according to the invention with a metal oxynitride layer can provide an electrical connection of the transparent electrode to the control and analysis device for further processing of the electrical signal. In combination with a metal layer, it is possible in this way to achieve high-conductivity contacts in the visible range of the touch sensor device, which simultaneously satisfy high requirements with respect to light reflectivity.

According to the present invention, the touch sensor device may constitute a part of a touch sensor display unit, a so-called touch panel. In this case, the touch sensor device may be implemented as a separate unit and attached to a display unit such as a liquid crystal (LCD) or OLED (organic light emitting diode) display screen to form a so-called “out-cell” touch sensor device. can (see JP2013/20347, Fig. 3a). In order to form a touch panel having a smaller thickness, the touch sensor device may be further integrated with the display unit. Thus, for example, the individual components of the touch sensor device, for example the transparent substrate, simultaneously constitute a component of the LCD display screen (“on-cell” touch sensor device, thus the touch sensor device). shares a substrate with a display screen located behind it and does not have a separate substrate from the display screen, see JP2013/20347, Fig. 3b) can be further integrated into the display unit (“in-cell”) )" touch sensor device, see US8243027). It should be noted that in the case of a multilayered embodiment of the contact structure according to the invention made of a metal layer and a metal oxynitride layer, the layer with the metal oxynitride in the layer order is spaced farther from the display of the metal layer than the metal layer. Accordingly, the metal oxynitride layer is mounted in front of the metal layer in the direction in which the user faces the touch panel to cover the metal layer.

1A and 2A are schematic plan views illustrating the configuration of a touch sensor device according to the present invention.
1B and 2B are enlarged cross-sectional views each showing a layered configuration of various contact structures.

Hereinafter, the present invention will be described in more detail with reference to Figs. 1A and 2A are schematic plan views showing the configuration of a touch sensor device according to the present invention as the same, and FIGS. 1B and 2B are enlarged cross-sections of the layered configuration of various contact structures, respectively. Here, a detailed portion of the touch sensor device shown in FIGS. 1A and 2A is indicated by a broken line. The touch sensor device 10 has an optically transparent substrate 1 which is part of a touch panel and is made of an electrically insulating material, for example glass or transparent plastic. As an “on-cell” touch sensor device, in the scope of one embodiment, the substrate of the touch sensor device simultaneously constitutes the color filter substrate of the LCD display screen, but the substrate may be implemented as a separate substrate. The above embodiment is based on capacitive detection of touch and corresponds to the projected capacitive touch panel of JP2013/20347 in function and structure. Electrodes required for capacitive detection are arranged in a chessboard pattern in a grid consisting of columns and rows on the same side of a substrate and are made of an optically transparent electrically conductive material, for example, indium-tin oxide (ITO). It is formed by two layered touch sensor members (2x, 2y). For the sake of illustration, the two electrodes are shown in different shades in the figure. The electrodes are electrically separated from each other by an electrically insulating layer 3 at the intersection. In this case, a group of touch sensor members, for example 2y, are connected to each other so that electricity is conducted in a vertical direction at each corner, while the touch sensor members 2x of the other group are initially electrically blocked. The electrical blocking is achieved by the electrical insulating layer (3). The group of touch sensor members 2x are in electrical contact in the horizontal direction by the connecting contact structure 4 . In this embodiment, the connection contact structure is composed of three layers, a layer made of molybdenum oxynitride (5) and a highly conductive metal such as Al, Mo, Cu, Ag or Au, or one of these metals as a base It has a metal layer 6 made of an alloy. Also provided as a cover layer is an additional metal layer 7 made of Mo, W, Ti, Nb or Ta or an alloy based on one of these metals, in which case preferably the oxynitride layer has the same metal or the same alloy is used. Layer 7 serves as a diffusion barrier and/or protective layer (against mechanical damage, corrosion, moisture, sweat, etc.) for the underlying layer 6 made of said highly conductive metal. The layer made of the metal oxynitride is mounted in front of the two metal layers in the direction 20 in which the user faces the touch panel to cover the metal layers.

Each row of touch sensor members 2x is electrically connected to control and analysis electronics (not shown in the figure), such as each row of touch sensor members 2y. The control and analysis electronics detect a change in capacitance induced by the touch and analyze this change in relation to the location of the touch. The electrical connection is made at least in the area of the touch panel visible to the user by means of a contact structure 4' consisting of three layers, similar to the connection contact structure 4, a layer 5 made of molybdenum oxynitride. , Al, Mo, Cu, Ag or Au or a metal layer (6) made of an alloy based on one of these metals and Mo, W, Ti, Nb or Ta or an alloy based on one of these metals It has a metal layer (7).

The layers of the touch sensor member and the contact structure 4 or 4' are deposited over a large area by sputter deposition using an appropriate target, wherein the metal oxynitride layer is formed while supplying oxygen and nitrogen. The applied layer is structured by photolithography and subsequent wet chemical etching using an etchant consisting of phosphoric acid, nitric acid and acetic acid (PAN etchant).

In a series of experiments, various molybdenum oxynitride layers with different compositions were prepared, and their properties were compared with those of the corresponding metals, metal oxides and metal nitride layers in Table 1. A target made of pure molybdenum, a target made of an alloy of molybdenum and 6 atomic% tantalum, or a target made of an alloy of molybdenum and 10 atomic% niobium, respectively, was used as the sputtering target. The molybdenum oxynitride layer is Ar/O ₂ /N ₂ Formed by reactive sputtering from a metal target using the mixture. In this case, the relative proportion of the reaction gas in the process was about 33 vol% of O ₂ for oxide, about 23 vol% of O ₂ and 15 vol% of N ₂ with respect to oxynitride. The process gas pressure was about 5*10 ^-3 mbar.

To measure the reflectance, a glass substrate (Corning Eagle XG, 50x50x0.7 mm ³ ) was coated with molybdenum oxynitride or a control material and a cover layer made of 250 nm Al. In this case, the third metal layer was omitted because it did not affect the measurement result. The reflectance was measured using a Perkin Elmer Lambda 950 spectrophotometer through a glass substrate (in the direction of the observer 20's line of sight). In order to obtain as low a reflectance as possible, the thickness of the molybdenum oxynitride layer was changed in the range of 35 to 75 nm, and the best results were obtained in the range of 40 to 60 nm.

The electrical resistivity of the molybdenum oxynitride and the control material was measured based on a sample in which a glass substrate was coated with a 55 nm-thick layer. Measurements were made using the 4-point method (commercially available 4-point measuring head).

In order to measure the wet etching rate, each layer having a thickness of 300 nm was used. The wet etching rate was measured in a stirred PAN solution with 66% phosphoric acid, 10% acetic acid, 5% nitric acid and water (balance) at 40 °C. At this time, each of the samples was immersed in the etchant for 5 seconds, then rinsed and dried. The mass of the dried sample was then measured with a precision balance. These steps were repeated until the entire layer was dissolved. The etching rate was calculated from the amount of mass reduction compared to the etching time.

* indicates an embodiment according to the present invention. Composition (atomic%) Mo Ta Nb O N Reflectance R (%) Electrical resistance Rs (Ω/area) Wet Etching Rate (nm/min) Mo One >40 1.8 1550±36 Mo oxide 26.7 73.3 4.3 1000 4000±500 Mo nitride 67 33 >40 28 402±15 Mo oxynitride ^* 24 65.3 10.7 4.2 2000 1262±100 MoTa 94 6 >40 2 1499±84 MoTa oxide 29 3 68 5.4 700 3350±200 MoTa nitride 63 4 33 >40 30 92±6 MoTa oxynitride ^* 27 3 57.4 12.6 4.8 1700 359±10 MoNb 90 10 >40 2.3 817±40 MoNb oxide 36.7 4.6 58.7 6 750 734±10 MoNb nitride 60.3 6.7 33 >40 - <100 MoNb oxynitride ^* 23.5 2.6 62.2 11.7 4.3 3000 253±10

The sample with molybdenum oxynitride shows improved reflection behavior compared to molybdenum oxide. In addition, in the case of Mo oxynitride or MoTa oxynitride, the difference between the etching rate of the metal or alloy and the wet etching rate of the oxynitride could be reduced.

Claims (12)

an optically transparent electrically insulating substrate (1);
at least one optically transparent electrically conductive sensor member (2x, 2y) disposed on the substrate;
A touch sensor device having at least one contact structure (4, 4') for electrically contacting an optically transparent sensor member (2x, 2y), the touch sensor device comprising:
Composition formula Mo _a X _b O _c N _d wherein the contact structure is b≥0 (wherein X is an element selected from the group consisting of niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium, or niobium, tantalum , vanadium, tungsten, chromium, rhenium, hafnium, a combination of a plurality of elements selected from the group consisting of titanium and zirconium, wherein the indices a, b, c and d are expressed in atomic percent, resulting in a sum of 1) with having at least one layer made of a metal oxynitride,
With the composition formula Mo _a X _b O _c N _d A touch sensor device, characterized in that the following relation applies to at least one layer made of metal oxynitride:
0≤b≤0.25a; 0.5≤c≤0.75; 0.01≤d≤0.2 and a+b+c+d=1 and c+d≤0.8. The touch sensor device according to claim 1, wherein the layer made of metal oxynitride has a reflectance of <20%. 3. The method according to claim 1 or 2, having the compositional formula Mo _a X _b O _c N _d The touch sensor device, characterized in that at least one layer made of metal oxynitride has at least 3 times to up to 9 times more oxygen atoms than nitrogen atoms. The touch according to claim 1 or 2, characterized in that the contact structure is implemented in multiple layers and further has a metal layer made of Al, Mo, Cu, Ag or Au or an alloy based on one of these metals. sensor device. The sensor member according to claim 1 or 2, wherein the sensor member embodied as a sensor electrode is disposed in a grid, wherein a plurality of first sensor electrodes are disposed at different positions in a first direction and a plurality of second sensor electrodes are disposed in a second direction The sensor electrodes are respectively separated from each other at the intersection by at least one electrically insulating layer, and the plurality of first sensor electrodes are contacted at the intersection by a contact structure 4 having a metal oxynitride. A touch sensor device, characterized in that there is. 3. Touch sensor device according to claim 1 or 2, characterized in that the contact structure (4') is configured as a contact terminal for electrically connecting the touch sensor member to control and/or analysis electronics. The touch sensor device according to claim 1 or 2, configured as a projected capacitive touch sensor. A touch sensor display unit (touch panel) having a touch sensor device according to claim 1 or 2, wherein the touch sensor device is mounted on the front of the display unit (out-cell) or is integrally configured with the display unit (on-cell) , in-cell) touch sensor display. The touch sensor display unit according to claim 8, wherein the contact structure has at least one metal layer and at least one metal oxynitride layer, wherein the metal oxynitride layer is spaced farther from the display than the metal layer in the order of the layers. . As a method for manufacturing the touch sensor device according to claim 1 or 2, while supplying oxygen and nitrogen, a sputtering target Mo _1-z X _z (wherein X is niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, an element selected from the group consisting of titanium and zirconium, or a combination of a plurality of elements selected from the group consisting of niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium, and 0≤z≤0.2) A method for manufacturing a touch sensor device comprising the step of manufacturing the metal oxynitride layer by a vapor deposition method. delete delete

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