CN105593800A - Touch sensor arrangement - Google Patents

Touch sensor arrangement Download PDF

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Publication number
CN105593800A
CN105593800A CN201480054704.5A CN201480054704A CN105593800A CN 105593800 A CN105593800 A CN 105593800A CN 201480054704 A CN201480054704 A CN 201480054704A CN 105593800 A CN105593800 A CN 105593800A
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touch sensing
layer
sensing device
metal
contact structures
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CN201480054704.5A
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CN105593800B (en
Inventor
哈拉尔德·科斯腾鲍尔
多米尼克·洛伦茨
布鲁斯·曾
约尔格·温克勒
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Plansee SE
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Plansee SE
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/048—Interaction techniques based on graphical user interfaces [GUI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate

Abstract

The invention relates to a touch sensor arrangement comprising an optically transparent, electrically insulating substrate, at least one optically transparent, electrically conductive sensor element arranged on the substrate, and at least one contacting structure for electrically contacting the optically transparent sensor element. The contacting structure comprises at least one layer composed of a metal oxynitride having the composition Moa Xb Oc Nd where b >= 0, wherein X is an element or a combination of a plurality of elements from the group of the elements niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium.

Description

Touch sensing device
Background technology
Touch sensing is used for multiple electronic installation, for example, and for navigation system, photographic printing apparatus, for PC systemIn, or be recently usually used in such as mobile phone, smart mobile phone, dull and stereotyped PC, PDA (personal digital assistant), portable musicIn the mobile device of device etc. Under this situation, touch sensing is often disposed at for example liquid crystal (LCD) or OLED (organic light emission twoPolar body) on the display unit of display screen, or be incorporated in this class display unit and form so-called contact panel and (be also called touch-controlScreen). This class contact panel allows user's operating electronic devices intuitively, and wherein user is by finger, pen or another thingPart touches the surface of touch sensing and communicates by letter with electronic installation.
Become known for the various physical methods of detected touch point, these methods are for example for example, based on () optics, acoustics, resistanceFormula or condenser type detect. The major part of the contact panel that can buy on market is based on resistance-type (resistance) or capacitiveDetect. The basic structure of capacitance touching control sensor device is made up of at least two conductive layers, and these two conductive layers overlay on electricity absolutelyOn edge substrate and optionally, control, it serves as the electrode of touch sensing. If dielectric material or conductive material are introduced tightIn adjacent sensor, therefore cause that two electric capacity between conductive layer change, this change can be examined by corresponding analytic unitSurvey and analyze. Two conductive layers can be coated on the relative surface of substrate, or for example described in JP2013/20347,Be coated in a side of substrate. Under the situation of the configuration in a side of substrate, electrode is typically with two-dimensional grid configuration, whereinSingle electrode intersects ground with the configuration of grid and mutually stacks, and at lap position place by electric insulation layer and separated from one another.
For application touch control sensor in Touch Screen, touch sensing must be embodied as in optical range saturatingBright, thus realize as far as possible unimpeded inspect of user to display unit. For this reason, by for example tin indium oxide (ITO), oxygenChange transparent conductive oxide (TCO, the transparentconductive of indium zinc (IZO) or aluminum zinc oxide (AZO)Oxide), the thin polymer film of conduction or similar material manufacture electrode are known. Due to the low conductivity of this class material andDifficulty in fabrication schedule, is necessary to intersect at electrode by means of metal contact structure (being also called metal bridge) in actual applicationsPosition by its bridge joint. In the simplest variant, by Al, Mo, Cu, Ag or Au or by based on thering is good conductivityThe alloy of one metalloid builds bridge joint contact structures with the form of simple layer. In addition, the embodiment of multilayer is known. EspeciallyBe, in order to improve the adhesion of the contact structures in transparency electrode, by have excellent electrical conductivity metal (for example Al, Cu orAg) between the layer of making and transparency electrode to be contacted, arrange by MoxTay(referring to US2011/0199341A1) or MoxNbyGroupThe metal intermediate layer becoming.
Although metal contact structure increases to electrical conductivity the degree of enough functions for Touch Screen, has followingInferior position: due to the reflecting properties of metal contact structure in visible-range, see outside its infringement Touch Screen. At Touch ScreenThe state of closing in, in the time that display unit is dimmed, metal contact structure can be visible to user in surround lighting, because goldenBelong to structure reflect ambient light consumingly. In order to suppress this less desirable reflection, known will be by such as MoOx、MoxTayOzOrMoxNbyOzThe light absorbing zone made of metal oxide be incorporated in contact structures. JP2013/20347 discloses for example a kind ofThe contact structures of multilayer, it is by the metal level such as Mo and by such as MoOxThe light absorbing zone of metal oxide composition make,Therefore a part for wherein light absorption oxide layer covering metal layer and less desirable reflection is suppressed.
Conventionally use suitable sputtering target material to manufacture thin conductive layer and contact structures by means of CVD method, whereinCarry out the follow-up structuring of single layer in conjunction with wet chemical etch process by means of photolithography. In order to manufacture this multilayerContact structures advantageously, the material of the single layer of contact structures has similar etch-rate because under this situation,Can in a step, complete etching process, and etching media needn't be suitable for the structuring of each layer, and therefore can reduceManufacturing cost. Etching character is especially at Mo/MoO mentioned abovexAlso unsatisfactory in example, because oxide layer MoOx'sEtch-rate be significantly different from metal level etch-rate (based on phosphoric acid, acetic acid and nitric acid, conventionally use in fabrication scheduleEtching solution in).
Except optics require and favourable etching behavior, contact structures also must meet other requirements. Particularly, moveMoving equipment is subject to higher load by the ambient influnence in operating (burn into moisture, sweat etc.), and special by corroding or change electricityProperty and functional other reactions that can damage touch sensing can cause the damage of contact structures.
In a word, the contact structures in touch sensing therefore must meet electricity, chemistry and optics various wantAsk. In order to make sensor have sufficient measuring accuracy and measuring speed, contact structures must have sufficiently high electrical conductivityAnd form alap transition resistance by transparency conductive electrode to be contacted. Contact structures in addition should be by userVisually perceive (if may), no matter be in the running of the display unit by being disposed at its rear, or work asWhen display unit is not in operation. In addition the material using, should have highly corrosion resistant and the height opposing energy to external actionPower, the material of contact structures should be able to be processed well in manufacture process in engraving method simultaneously, that is and, it should be able to be goodGround etching or there is good etching behavior. In addition, for realization under the situation in multilayer contact structures has more cost-benefitManufacture, the etching character of the material using in each layer should be suitable.
Summary of the invention
Target of the present invention is for providing a kind of touch sensing device with contact structures, and wherein these contact structures haveFavourable as far as possible character for requirement mentioned above.
This object realizes by touch sensing device according to claim 1. Can be from dependent claimsDraw favourable improvement. Touch sensing display unit and for according to the contact structures of touch sensing device of the present inventionManufacture method is also part of the present invention.
Touch sensing device according to the present invention has optically transparent electrically insulating base, on it, disposes at least oneOptically transparent conductive sensor element. Conventionally have multiple sensor elements, wherein these sensor elements can be selectiveGround electric control, and realize the accurate location touching. In addition, touch sensing device has at least one contact structures, its forElectrically contact this one or more optically transparent conductive sensor elements, wherein according to the present invention, these contact structures have by goldBelong at least one layer that nitrogen oxide is made. Form the metal of nitrogen oxide and be molybdenum under this situation or except molybdenum by from unitThe mixture of a kind of element of the group of element niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium or multiple element combination. Therefore, metalNitrogen oxide has type MoaXbOcNdConstituent, wherein X is from the Nb of group, Ta, V, W, Cr, Re, Hf, Ti and ZrA kind of element or from the combination of the multiple element in Nb, Ta, V, W, Cr, Re, Hf, Ti and Zr group. Should be in strict meaningIn justice by molecular formula MoaXbOcNdBe interpreted as proper chemical molecular formula, but only represent the relative of metal oxynitrideAtom composition. Therefore index a, b, c and d are the specification in atomic percent, and add up to 1. X nonessential existence, therefore bRelative scale can be 0. Preferably, X is niobium or tantalum. Alternatively, preferred b=0. It should be noted that metal oxynitride nonessentialFor ultrapure constituent, but also may there is the pollutant with other elements. At this, made by metal oxynitrideThe reflectivity of layer is less than 20%, is particularly less than 10%.
" touch " is not only interpreted as the direct touch by direct Body contact, but also be interpreted as into object toNear approaching sensor element. Therefore touch sensing device is interpreted as not only using finger, pointer or another thingDetection when part touches touch sensing element, but also near detection it arrives touch sensing element time. Particularly,Condenser type or resistance-type that touch sensing element can be formed for touching detect.
" optical clear " is interpreted as each layer or structure to whole electromagnetic visual spectrum or its part wave spectrum is in factRadioparent.
" reflectivity " is interpreted as the ratio between reflection flux and incident flux. The light of diffuse reflection or backscatteringAlso be taken into account in reflection flux. This is luminosity size, and the characteristic of the reflecting properties in its middle level is, considers the wavelength of human eyeRelevant susceptibility (by day under the situation of vision). In the first approximation method, the reflectivity R in % at 550nm is usedIn the reflectivity of measuring the layer producing according to the present invention. The susceptibility (brightness susceptibility, V-λ curve) of human eye under this wavelengthHigh.
Optically transparent conductive sensor element can have transparent conductive oxide (TCO, transparentConductiveoxide) (such as, tin indium oxide (ITO), indium zinc oxide (IZO) or indium oxide aluminium (AZO)), transparent conductionProperty polymer (such as, PEDOT:PSS (poly-(3,4-stretches ethylenedioxy thiophene) poly-(styrene sulfonate)), CNTOr Graphene (carbonnanotubes).
From application aspect (favourable optical reflection behavior, sufficiently high electrical conductivity) and from touch sensing deviceThe angle of manufacture, it is favourable in the layer of contact structures or intermediate layer, using metal oxynitride. Touch sensingThe layer of device conventionally like this produces, and wherein these layers are first by means of such as PVD (physical vapour deposition (PVD)) or CVD (chemical gaseous phaseDeposition) known film coating technique be deposited on substrate with the area compared with large, subsequently by means of photolithography mistakeJourney structuring, and further in ensuing etching process, processed. Under this situation, can do at supply oxygen and nitrogenIn situation for reactant gas (so-called reactive sputtering), use the metal targets of being made by molybdenum or molybdenum alloy deposit byThe layer that metal oxynitride is made. With only occur the supply oxygen in the situation that and extremely quick for the disturbance reponse of procedure parameterThe production process (for example proposing in JP2013/20347) of the metal oxide layer of sense is compared, and the extra use of nitrogen causes paintingThe stability of cloth process and the improvement of repeatability. The etching character of the layer of being made up of metal oxynitride is called in fabrication scheduleThe character that another is favourable. The layer of being made up of metal oxynitride is mixed the industrial use of being made up of phosphoric acid, nitric acid and acetic acidIn compound, show good etching character, and therefore can be in industrial common wet chemical etch method structure wellChange.
Definite, (that is the oxygen containing in layer is former between 3:1 and 9:1 for the ratio (in atomic percent) of oxygen to nitrogenSon is at least 3 times to maximum 9 times of nitrogen-atoms) metal oxynitride layer demonstrate generally about reflecting properties, electrical conductivityAnd the particularly advantageous character of etching character in the mixture of being made by phosphoric acid, nitric acid and acetic acid. By MoaXbOcNdMakeLayer be applicable to 3≤c/d≤9. By the variation of oxygen proportion or nitrogen proportion, can make single material character optimization. Purity nitrogen(although electrical conductivity is less than metal, resistance is at the category of metallic conductor demonstrating obvious metallic character aspect its electrical property for molybdenumIn, molybdenum nitride is reflection consumingly in optical range), and for example in JP2013/20347, propose to have for this applicationSuitable, significantly depart from from it lower than the electrical property of the pure zirconia molybdenum of stoichiometric oxygen proportion. Pure zirconia molybdenum be dark andIn this optical range, have antiradar reflectivity, electrical conductivity is lower and characterized by ionic conduction. Find, by using nitrogen-atoms partOxygen atom is replaced on ground, can maintain or improve for the essential resistance value of application institute in touch sensing) resistance R s≤3000Ohm/area) situation under, in the favourable character that realizes molybdenum oxide aspect optical reflection behavior. Meanwhile, by nitrogen to oxygen canControl with changed scale degree of gaining freedom can make the etching speed of nitrogen molybdenum oxide change and nitrogen oxidation by this free degree in particular rangeThe etching speed of molybdenum can be suitable for molybdenum or molybdenum alloy.
One preferred embodiment in, for metal oxynitride layer MoaXbOcNdApplicable following relation: 0≤b≤0.25a; 0.5≤c≤0.75; 0.01≤d≤0.2 and a+b+c+d=1 and c+d≤0.8. Particularly preferably, for metal nitrogen oxygenCompound layer adapted relationships 0≤b≤0.2a; 0.55≤c≤0.7; 0.01≤d≤0.15 and a+b+c+d=1 and c+d≤0.8, itsIn, can in king-sized degree, realize advantage described above.
Except the layer of being made up of metal oxynitride, contact structures also can have by one or more other materials systemsOne or more other layers that become, in a preferred instantiation variant, with multiple layer (particularly with two or threeLayer) carry out construction contact structures. Except the layer of being made up of metal oxynitride, contact structures can have by A1, Mo, Cu, AgOr Au or a kind of alloy based in these metals (ratio of the Main Components based on meaning alloy is greater than 90 atom percentagesThan) metal level made, realize thus the high conductance of contact structures. At this, the layer of being made up of metal oxynitride is positioned atMetal level upstream (inspecting in direction of the user of touch sensing device), thus realize the favourable of touch sensing deviceReflex behavior. Can be in addition the variation of layer thickness by metal oxynitride layer utilize interference effect to make the reflection of contact structuresOptimized performance.
In an embodiment according to the present invention, touch sensing device can be formed for the resistance-type for touch point(, resistance) or capacitive detection. Touch sensing device is preferably embodied as projective capacitive touch sensor, asDescribed in JP2013/20347. At this, touch sensing device has multiple sensor elements, and it is divided into Liang Ge group with gridThe form setting of lattice and serve as the electrode of touch sensing. Be interpreted as touch sensing element at substrate surface with grid configurationDiverse location sentence predefined pattern (for example checkerboard) configuration. But grid is not limited to arranged perpendicular. Therefore, Duo GeOne sensor electrode is arranged on diverse location place in a first direction, and multiple the second sensor electrode arranges in second directionAt diverse location place, wherein these sensor electrodes are isolated from each other by electric insulation layer at joining place respectively. Sensor electricalThe group of the utmost point interrupts by electric insulation layer at joining place. There is contact structures bridge joint or the initial electricity of contact of metal oxynitrideThese electrodes that separate.
Except transparency electrode is the bridge joint contact at its joining place, have metal oxynitride layer according to the present inventionContact structures also can provide transparency electrode with for further processing the control of the signal of telecommunication and being electrically connected of analytic unit. In conjunction withMetal level can be realized the contact with high conductivity, this electrical conductivity in this way in the visible range of touch sensing deviceMeet the high request about optical reflectivity simultaneously.
According to the present invention, touch sensing device can form a part (the so-called touch-control of touch sensing display unitPanel). At this, touch sensing device can be embodied as independent unit, and can be attached to for example liquid crystal (LCD) display screen orThe display unit of OLED (organic light emitting diode) display screen, forms so-called " external hanging type (out-cell) " touch sensing dressPut, referring to Fig. 3 a of JP2013/20347. In order to form the contact panel with less thickness, touch sensing device can be withBe incorporated into largely in display unit. Therefore, for example, the single component of touch sensing device (for example transparency carrier) can be sameTime form LCD display assembly (" externally embedded type (on-cell) " touch sensing device, this touch sensing device therefore withBe positioned at the display screen common substrate at its rear, and do not there is the substrate separating with display screen, referring to the figure of JP2013/203473b), or can be incorporated in display unit with larger degree (" embedded (in-cell) " touch sensing device, referring toUS8243027). It should be noted that made by metal level and metal oxynitride layer, according to the multilayer of contact structures of the present inventionIn the situation of embodiment, in the sequence of these layers, there is the layer of metal oxynitride than the demonstration of metal level and metal levelUnit interval obtains far. Inspecting in direction of the user of contact panel, therefore metal oxynitride layer is installed on metal levelTrip and concealed metal layer.
Detailed description of the invention
Below by an embodiment, the present invention is described in more detail with reference to Fig. 1 a, Fig. 1 b, Fig. 2 a and Fig. 2 b. Fig. 1 a andFig. 2 a is identical and schematically show according to the top view of the structure of touch sensing device of the present invention, wherein at Fig. 1 b andIn Fig. 2 b, show respectively the bedded structure of contact structures with the cross section amplifying. A part for touch sensing device is at thisShown by dashed lines in Fig. 1 a and Fig. 2 a. The part that touch sensing device 10 is contact panel and having by electrically insulating material systemBecome the optically transparent substrate 1 of (for example being made by glass or transparent plastic). Fill as " externally embedded type " touch sensing in designIn the scope of putting, the substrate of touch sensing device forms the color filter substrate of LCD display simultaneously, but this substrate also can be implementedFor independent substrate. This embodiment based on touch condenser type detect, and in function and structure corresponding to JP2013/20347In projective capacitive touch panel. Detect necessary electrode by multiple layering touch sensing element 2x for condenser type and2y forms, these elements with the pattern setting of checkerboard on the same side of substrate, by be listed as and grid that row forms in, and byOptically transparent conductive material (for example, tin indium oxide (ITO)) construction. In order to illustrate, to there is shown and there are different shadesTwo electrodes. These two electrodes are isolated from each other by electric insulation layer 3 at joining place. At this, one of touch sensing elementIndividual group (for example 2y) in vertical direction each corner each other in an electrically conductive connect, and touch sensing element another groupGroup 2x is that electricity interrupts at present. After this be then electric insulation layer 3. The 2x of group of touch sensing element passes through bridge in the horizontal directionConnect the contact structures 4 of use and electrically contact. These contact structures build and have by nitrogen with the form of three layers in the present embodiment and are oxidizedMolybdenum make layer 5 and by high conductance metal (such as Al, Mo, Cu, Ag or Au or a kind of the closing based in these metalsGold) metal level 6 made. In addition another that made by Mo, W, Ti, Nb or Ta or a kind of alloy based in these metals,Individual metal level 7 is used as cover layer, preferably uses and the identical metal or the phase that in oxynitride layer, use at thisSame alloy. This layer 7 conduct are for diffusion barrier and/or protective layer metal by high conductance, layer 6 that be positioned at below(opposing mechanical failure, burn into moisture, sweat etc.). The layer of being made up of nitrogen molybdenum oxide is in the user's of contact panel the side of inspectingOn 20, be installed on two metal level upstreams and two metal levels are hidden.
Each row of touch sensing element 2x are similar to each row and control and the analytical electron portion of touch sensing element 2yPart (this is not shown) electrical connection. Control and analytical electron parts detect the electric capacity being brought out by touch and change, and about touchPosition analyze these changes. Electrical connection at least occurs in by contact structures 4' for the visible contact panel of userRegion in, contact structures 4' is similar to contact structures 4 that bridge joint uses and with the modal creation of three layers and have by nitrogen and be oxidizedThe layer 5 that molybdenum is made, the metal level 6 made by A1, Mo, Cu, Ag or Au or the alloy based on a kind of in these metals and by Mo, W,The metal level 7 that Ti, Nb or Ta or the alloy based on a kind of in these metals are made.
By means of sputtering sedimentation, use corresponding target by touch sensing element and contact structures 4 or 4' layer with largerArea and deposit, at this, when supply oxygen and nitrogen, there is the formation of metal oxynitride layer. Pass through photolithographyAnd follow-up wet chemical etch method (using the etching solution (PAN etching solution) of being made up of phosphoric acid, nitric acid and acetic acid) makesThe layer structuring applying.
In the category of these experimentalists and technicians, manufacture the various layers of the nitrogen molybdenum oxide with different constituents, ratio in table 1Compared with its character and corresponding metal, metal oxide and metal nitride layer. Use respectively the target made by pure molybdenum, by molybdenum withThe target that the alloy of 6 atom % tantalums is made or the target be made up of the alloy of molybdenum and 10 atom % niobiums are as sputtering target material. Pass throughUse Ar/O2/N2 mixture by metal targets sputter nitrogen molybdenum oxide layer reactively. At this, reactant gas in this processRelative scale be the O2 of about 33 volume % for oxide, and be O2 and 15 bodies of about 23 volume % for nitrogen oxideThe N2 of long-pending %. Process gas pressure is about 5*10-3mbar。
In order to determine reflectivity, by nitrogen molybdenum oxide or reference material and the cover layer coating glass made by 250nmAlGlass substrate (ComingEagleXG, 50 × 50 × 0.7mm3). At this, omit the 3rd metal level because its to measurement result withoutImpact. Use reflectivity (observer's the inspect side of PerkinElmerLambda950 spectrometer measurement via glass substrateTo 20). In order to obtain alap reflectivity, the layer thickness of nitrogen molybdenum oxide changes in the scope of 35nm to 75nm, whereinIn the scope of 40nm to 60nm, can reach optimum.
Measure the resistance of nitrogen molybdenum oxide and reference material based on sample, wherein glass substrate is coated with the layer that 55nm is thick.Use four-point method (four commercially available point measurement heads) to implement to measure.
In order to determine Wet-type etching speed, use the layer respectively with 300nm thickness. At 40 DEG C, there is 66% phosphorusAcid, 10% acetic acid, 5% nitric acid and water (residue), stir after PAN solution in measure Wet-type etching speed. At this, by sampleThis is immersed in respectively in etching solution through 5 seconds and with afterflush and dry. Subsequently on precision balance to dried sampleWeigh. Repeat these steps, until whole layer is dissolved. By reducing to calculate etch-rate with the quality of etching period.
Table 1
* mark according to the embodiment of the present invention
The sample with nitrogen molybdenum oxide demonstrates the reflex behavior with respect to the improvement of molybdenum oxide. In addition be oxidized at Mo nitrogen,In the situation of thing or MoTa nitrogen oxide, the Wet-type etching speed of metal or alloy and the Wet-type etching speed of corresponding nitrogen oxideBetween difference can reduce.

Claims (12)

1. a touch sensing device (10), it has
The substrate (1) of optically transparent electric insulation,
The sensor element (2x, 2y) of at least one optically transparent conduction, it is arranged on described substrate,
And at least one contact structures (4,4'), it is for electrically contacting optically transparent described sensor element (2x, 2y), its spyLevy and be,
Described contact structures have at least one layer, and described layer is by having constituent MoaXbOcNdMetal oxynitride make,Wherein b >=0, wherein X is from a kind of element in group's niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium or from described groupThe combination of the multiple element in niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium.
2. touch sensing device according to claim 1, is characterized in that, the institute of being made up of described metal oxynitrideState have < 20% reflectivity of layer.
3. touch sensing device according to claim 1 and 2, is characterized in that, described metal oxynitride layerMoaXbOcNdThe oxygen atom having is at least 3 times to maximum 9 times of nitrogen-atoms.
4. according to the touch sensing device described in any one in claims 1 to 3, it is characterized in that, for described metalOxynitride layer MoaXbOcNdFollowing relation is suitable for:
0≤b≤0.25a; 0.5≤c≤0.75; 0.01≤d≤0.2 and a+b+c+d=1 and c+d≤0.8.
5. according to the touch sensing device described in any one in claim 1 to 4, it is characterized in that described contact structuresForm and additionally there is the metal level made by Al, Mo, Cu, Ag or Au or based on a kind of in these metals with the form of multilayerThe metal level made of alloy.
6. according to the touch sensing device described in any one in claim 1 to 5, it is characterized in that, form as sensingThe described sensor element such as grade of device electrode is with the form setting of grid, and wherein multiple first sensor electrodes are established in a first directionPut at diverse location place, multiple the second sensor electrodes are arranged on diverse location place in second direction, described sensor electrodeBe isolated from each other by least one electric insulation layer at joining place respectively, and multiple described first sensor electrode is in described phaseIntersection point place is by having described contact structures (4) contact of described metal oxynitride.
7. according to the touch sensing device described in any one in claim 1 to 5, it is characterized in that described contact structures(4') be embodied as the contact terminal for described touch sensing element is electrically connected with control and/or analytical electron parts.
8. according to the touch sensing device described in any one in claim 1 to 7, be implemented as the touch-control of projected capacitiveSensor.
9. the touch sensing demonstration having according to the touch sensing device described in any one in claim 1 to 8Unit (contact panel), wherein, described touch sensing device is installed on display unit upstream (external hanging type), or described in being integrated inIn display unit (externally embedded type, embedded).
10. touch sensing display unit according to claim 9, is characterized in that, described contact structures have at leastA metal level and at least one metal oxynitride layer, wherein in the sequence of these layers, described metal oxynitride layer ratioDescribed metal level and described display unit compartment of terrain are farther.
11. 1 kinds by sputtering target material Mo1-zXzFor the manufacture of according to the touch sensing described in any one in claim 1 to 8The purposes of contact structures of device, wherein X be from a kind of element in group's niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium orThe combination of multiple element, and 0≤z≤0.2.
12. 1 kinds for the manufacture of according to the method for the touch sensing device described in any one in claim 1 to 8, whereinThe in the situation that of supply oxygen and nitrogen, use sputtering target material Mo1-zXzManufacture metal oxynitride layer by CVD method,Wherein X be from a kind of element in group's niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium or come since then group's niobium, tantalum, vanadium,The combination of the multiple element in tungsten, chromium, rhenium, hafnium, titanium and zirconium, and 0≤z≤0.2.
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