CN105593800B - Touch sensing device - Google Patents
Touch sensing device Download PDFInfo
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- CN105593800B CN105593800B CN201480054704.5A CN201480054704A CN105593800B CN 105593800 B CN105593800 B CN 105593800B CN 201480054704 A CN201480054704 A CN 201480054704A CN 105593800 B CN105593800 B CN 105593800B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/048—Interaction techniques based on graphical user interfaces [GUI]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
Abstract
The present disclosure generally relates to a kind of touch sensing devices, with an optically transparent electrically insulating base, at least one the optically transparent conductive sensor element being configured on the substrate and at least one contact structures for being in electrical contact the optically transparent sensor element.The contact structures have by including constituent MoaXbOcNdMetal oxynitride made of at least one layer, wherein b >=0, wherein X is the combination of a kind of element or multiple element of the group from elemental niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium.
Description
Background technique
Touch sensing is used in a variety of electronic devices, for example, being used for PC system in navigation system, photographic printing apparatus
In, or it is usually used in such as mobile phone, smart phone, tablet PC, PDA (personal digital assistant), portable music recently
In the mobile device of device etc..In this situation, touch sensing is often configured at such as liquid crystal (LCD) or OLED (organic light emission two
Polar body) display screen display unit on, or be incorporated into this kind of display unit and form so-called touch panel (also referred to as touch-control
Screen).This kind of touch panel allows user intuitively to operate electronic device, and wherein user passes through finger, pen or another object
Part touches surface and the electronic device communications of touch sensing.
Become known for the various physical methods of detected touch point, these methods are for example based on (for example) optics, acoustics, resistance
Formula or condenser type detection.The major part of commercially available touch panel is based on resistance-type (resistance) or capacitive
Detection.The basic structure of capacitance touching control sensor device is made of at least two conductive layers, the two conductive layers overlay on electric exhausted
It on edge substrate and optionally controls, serves as the electrode of touch sensing.If dielectric material or conductive material are introduced tight
In adjacent sensor, therefore the capacitor between two conductive layers is caused to change, which can be examined by corresponding analytical unit
It surveys and analyzes.Two conductive layers can be coated to the opposite surface of substrate, or described in such as JP2013/20347,
On coating to the side of substrate.Under the situation of the configuration on the side of substrate, electrode is typically configured with two-dimensional grid, wherein
The configuration intersection ground of single electrode as a grid mutually stacks, and is separated from each other at lap position by electric insulation layer.
For the application touch control sensor in Touch Screen, it is necessary to be embodied as touch sensing in optical range thoroughly
It is bright, the as unimpeded as possible of display unit is inspected to realize user.For this purpose, by such as tin indium oxide (ITO), oxygen
Change transparent conductive oxide (TCO, the transparent conductive of indium zinc (IZO) or aluminum zinc oxide (AZO)
Oxide), conductive thin polymer film or similar material manufacture electrode are known.Due to this kind of material low conductivity and
Difficulty in fabrication schedule, it is necessary to be intersected by means of metal contact structure (also referred to as metal bridge) in electrode in practical applications
Position at bridged.In simplest variant, by Al, Mo, Cu, Ag or Au or by based on good conductivity
The alloy of one metalloid constructs bridge joint contact structures in the form of simple layer.In addition, the embodiment of multilayer is known.Especially
Be, in order to improve the adhesion of the contact structures in transparent electrode, by with excellent electrical conductivity metal (such as Al, Cu or
Ag it is arranged between layer made of) and transparent electrode to be contacted by MoxTay(referring to US2011/0199341A1) or MoxNbyGroup
At metal intermediate layer.
Although conductivity is increased to the degree for being sufficiently used for the function of Touch Screen by metal contact structure, have following
Disadvantage: due to reflecting properties of the metal contact structure in visible-range, the appearance of Touch Screen is damaged.In Touch Screen
Closing state in, when display unit is dimmed, metal contact structure can in environment light to user as it can be seen that because gold
Belong to structure consumingly reflection environment light.In order to inhibit this undesirable reflection, it is known that will be by such as MoOx、MoxTayOzOr
MoxNbyOzMetal oxide made of light absorbing layer be incorporated into contact structures.JP2013/20347 discloses for example a kind of
The contact structures of multilayer, by the metal layer of such as Mo and by such as MoOxMetal oxide composition light absorbing layer be made,
Wherein light absorption oxide layer covers metal layer and therefore a part of undesirable reflection is suppressed.
Thin conductive layer and contact structures are manufactured by means of vapor deposition method usually using suitable sputtering target material, wherein
The subsequent structural of single layer is carried out by means of photolithography combination wet chemical etch process.In order to manufacture the multilayer
Contact structures advantageously, the material of the single layer of contact structures has similar etch-rate because in this condition,
Etching process can be completed in one step, and etching media is not necessarily suitable for each layer of structuring, and therefore can reduce
Manufacturing cost.Etching property is especially in Mo/MoO mentioned abovexIt is in example and unsatisfactory, because of oxide layer MoOx's
Etch-rate be markedly different from metal layer etch-rate (it is based on phosphoric acid, acetic acid and nitric acid, in fabrication schedule it is usually used
Etching solution in).
Other than optical requirement and advantageous etching behavior, contact structures must also meet other requirements.In particular, moving
Dynamic equipment influences (burn into moisture, sweat etc.) by higher load by the environment in operation, and special by corroding or changing electricity
Property and other functional reactions of touch sensing can be damaged can lead to the damages of contact structures.
In short, therefore contact structures in touch sensing have to meet electricity, chemistry and optical various want
It asks.In order to make sensor have sufficient measuring accuracy and measuring speed, contact structures must have sufficiently high conductivity
And alap transition resistance is formed by transparent conductive electrode to be contacted.Contact structures in addition should can not be by user
Visually perceive (if may), either in the operational process of the display unit by being configured at its rear, or work as
Display unit not in operation when.In addition, used material should have highly corrosion resistant and resist energy to the high of external action
Power, while the material of contact structures should be able to be handled in engraving method well in the fabrication process, that is, it should be able to be good
Ground etching has good etching behavior.In addition, more cost effective in order to be realized under the situation of multilayer contact structure
The etching property of manufacture, the material used in each layer should be suitable.
Summary of the invention
It is a goal of the present invention to provide a kind of touch sensing device with contact structures, wherein the contact structures have
The property as advantageous as possible for requirement mentioned above.
The purpose is realized by touch sensing device according to claim 1.It can be from dependent claims
It obtains and is advantageously improved.Touch sensing display unit and contact structures for touch sensing device according to the invention
Manufacturing method is also part of the invention.
Touch sensing device according to the present invention has optically transparent electrically insulating base, is configured at least one thereon
Optically transparent conductive sensor element.Usually there are multiple sensor elements, wherein these sensor elements can be selective
Ground electric control, and realize the accurate positioning touched.In addition, touch sensing device has at least one contact structures, it is used for
It is in electrical contact the optically transparent conductive sensor element of the one or more, wherein according to the present invention, which has by gold
Belong at least one layer made of nitrogen oxides.Formed nitrogen oxides metal be in this situation molybdenum or in addition to molybdenum by from member
The mixture of a kind of element or the multiple element combination of the group of plain niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium.Therefore, metal
Nitrogen oxides has type MoaXbOcNdConstituent, wherein X be in group Nb, Ta, V, W, Cr, Re, Hf, Ti and Zr
A kind of element or the multiple element in Nb, Ta, V, W, Cr, Re, Hf, Ti and Zr group combination.It should not strictly anticipate
By molecular formula Mo in justiceaXbOcNdIt is interpreted as proper chemical molecular formula, but only indicates the opposite of metal oxynitride
Atom composition.Therefore index a, b, c and d are the specification with atomic percentage, and sum is 1.X is not necessarily present, therefore b
Relative scale can be 0.Preferably, X is niobium or tantalum.Alternatively, preferably b=0.It should be noted that metal oxynitride is not necessarily
For ultrapure constituent, but it is also likely to be present the pollutant with other elements.Here, made of metal oxynitride
The reflectivity of layer is less than 20%, and especially less than 10%.
" touch " is understood not only in the sense of the direct touch contacted by direct body, and be also understood as object to
It is close near sensor element.Touch sensing device is it should be understood that not only to use finger, stylus or another object
Part touches detection when touch sensing element, but also the detection when it is reached near touch sensing element.In particular,
Touch sensing element can form condenser type or the resistance-type detection for touch.
" optical clear " is interpreted as each layer or structure
It is radioparent.
" reflectivity " is interpreted as the ratio between reflection flux and incident flux.The light of diffusing reflection or backscattering
It is also considered in reflection flux.This is luminosity size, and the characteristic of the reflecting properties in middle layer is, considers the wavelength of human eye
Relevant susceptibility (under the situation of photopic vision).In the first approximation method, it will be used in the reflectivity R in terms of % of 550nm
In the reflectivity for the layer that measurement generates according to the present invention.The susceptibility (luminance sensitivity, V- λ curve) of human eye is at this wavelength most
It is high.
Optically transparent conductive sensor element can have transparent conducting oxide (TCO, transparent
Conductive oxide) (such as, tin indium oxide (ITO), indium zinc oxide (IZO) or indium oxide aluminium (AZO)), transparent conduction
Property polymer (such as, PEDOT:PSS (poly- (3,4- stretch ethylenedioxy thiophene) poly- (styrene sulfonate)), carbon nanotube
(carbon nano tubes) or graphene.
From the point of view of application aspect (advantageous optical reflection behavior, sufficiently high conductivity) and from touch sensing device
Manufacture from the perspective of, be advantageous in the layer of contact structures or middle layer using metal oxynitride.Touch sensing
The layer of device usually generates in this way, and wherein these layers are first by means of such as PVD (physical vapour deposition (PVD)) or CVD (chemical gaseous phase
Deposition) known film coating technique be deposited on substrate with biggish area, subsequently, by means of photolithography mistake
Journey structuring, and be further pocessed in next etching process.In this situation, can make in supply oxygen and nitrogen
Deposited in the case where for reactant gas (so-called reactive sputtering) using the metal targets made of molybdenum or molybdenum alloy by
Layer made of metal oxynitride.With only in the case where supplying oxygen occur and it is extremely quick for the disturbing reaction of procedure parameter
The generation process (such as proposed in JP2013/20347) of the metal oxide layer of sense is compared, and the additional use of nitrogen causes to apply
The improvement of the stability and reproducibility of cloth process.The etching property of the layer made of metal oxynitride is known as in fabrication schedule
Another advantageous property.The layer made of metal oxynitride is mixed what is industrially used made of phosphoric acid, nitric acid and acetic acid
It closes in object and shows good etching property, and therefore can industrially good ground structure in common wet chemical etch method
Change.
It has been determined that oxygen to the ratio (with atomic percentage) of nitrogen between 3:1 and 9:1 (also that is, the oxygen that contains in layer is former
Son is at least 3 times to most 9 times of nitrogen-atoms) metal oxynitride layer generally show about reflecting properties, conductivity
And the particularly advantageous property of the etching property in the mixture made of phosphoric acid, nitric acid and acetic acid.By MoaXbOcNdIt is made
Layer be suitable for 3≤c/d≤9.By the variation of oxygen specific gravity or nitrogen specific gravity, single material properties can be made to optimize.Purity nitrogen
Molybdenum shows obvious metallic character (although conductivity is less than metal, scope of the resistance in metallic conductor in terms of its electrical property
In, molybdenum nitride consumingly reflects in optical range), and propose have for this application for example in JP2013/20347
Suitably, the electrical property lower than the pure zirconia molybdenum of the oxygen specific gravity of stoichiometry is deviated significantly from from it.Pure zirconia molybdenum be it is dark and
There is antiradar reflectivity, conductivity is lower and is characterized by ionic conduction in the optical range.It has been found that by with nitrogen-atoms part
Oxygen atom is replaced on ground, can maintained or improved for the required resistance value of application institute in touch sensing) resistance Rs≤3000
Ohm/area) in the case where, the favorable property of molybdenum oxide is realized in terms of optical reflection behavior.Meanwhile by nitrogen to oxygen can
Control with changed scale degree of gaining freedom can make etching speed variation and the nitrogen oxidation of nitrogen oxidation molybdenum by the freedom degree in particular range
The etching speed of molybdenum is suitably adapted for molybdenum or molybdenum alloy.
In one preferred embodiment, for metal oxynitride layer MoaXbOcNdIt is applicable in following relationship: 0≤b≤
0.25a；0.5≤c≤0.75；0.01≤d≤0.2 and a+b+c+d=1 and c+d≤0.8.It is particularly preferred that for metal nitrogen oxygen
0≤b of compound layer adapted relationships≤0.2a；0.55≤c≤0.7；0.01≤d≤0.15 and a+b+c+d=1 and c+d≤0.8,
In, advantage described above can be realized in king-sized degree.
Other than the layer made of metal oxynitride, contact structures can also have by one or more other materials systems
At other one or more layers, in a preferred specific examples variant, with multiple layers (especially with two or three
Layer) carry out construction contact structures.Other than the layer made of metal oxynitride, contact structures can have by A1, Mo, Cu, Ag
Or (ratio based on the Main Components for meaning alloy is greater than 90 atomic percents for Au or the alloy based on one of these metals
Than) made of metal layer, be achieved in the high conductance of contact structures.Here, the layer made of metal oxynitride is located at
Metal layer upstream (is inspected on direction) in the user of touch sensing device, to realize the advantageous of touch sensing device
Reflex behavior.It can make the reflection of contact structures using interference effect additionally by the variation of the thickness degree of metal oxynitride layer
Performance optimizes.
In an embodiment according to the present invention, touch sensing device can be formed for the resistance-type for touch point
(that is, resistance) or capacitive detection.Touch sensing device is preferably implemented as projective capacitive touch sensor, such as exists
Described in JP2013/20347.Here, touch sensing device has multiple sensor elements, it is divided into Liang Ge group with grid
The form of lattice is arranged and serves as the electrode of touch sensing.It is interpreted as touch sensing element in substrate surface with grid configuration
Different location at predefined patterns (such as checkerboard) configuration.However, grid is not limited to arranged perpendicular.Therefore, Duo Ge
One sensor electrode is arranged at different locations in a first direction, and multiple second sensor electrodes are arranged in a second direction
At different locations, wherein these sensor electrodes are isolated from each other at crosspoint by electric insulation layer respectively.Sensor electricity
The group of pole is interrupted at crosspoint by electric insulation layer.Contact structures bridge joint or contact with metal oxynitride are initially electric
These electrodes of separation.
Other than bridge joint contact of the transparent electrode at its crosspoint, there is metal oxynitride layer according to the present invention
Contact structures also can provide being electrically connected for transparent electrode and the control of electric signal for further processing and analytical unit.In conjunction with
Metal layer can realize the contact with high conductivity, the conductivity in the visible range of touch sensing device by this method
Meet the high request about optical reflectivity simultaneously.
According to the present invention, touch sensing device can form a part (so-called touch-control of touch sensing display unit
Panel).It is inspected on direction in the user of contact sensor device, touch sensing device is installed on display unit upstream.
Here, it is individual unit that touch sensing device is implementable, and attaches to such as liquid crystal (LCD) display screen or OLED and (have
Machine light-emitting diode) display screen display unit, form so-called " external hanging type (out-cell) " touch sensing device, referring to
Fig. 3 a of JP2013/20347.In order to form the touch panel with relatively small thickness, touch sensing device can be with larger journey
Degree is integrated into display unit.Thus, for example, the single component (such as transparent substrate) of touch sensing device can be formed simultaneously
(" externally embedded type (on-cell) " touch sensing device, the touch sensing device is therefore and positioned at it for the component of LCD display
The display screen common substrate at rear, and do not have the substrate separated with display screen, referring to Fig. 3 b of JP2013/20347), or
Can be integrated into display unit with bigger degree (" embedded (in-cell) " touch sensing device, referring to
US8243027).It should be noted that made of metal layer and metal oxynitride layer, the multilayer of contact structures according to the present invention
In the case where embodiment, in the sequence of these layers, display of the layer with metal oxynitride than metal layer and metal layer
Unit interval obtains far.It is inspected on direction in the user of touch panel, therefore metal oxynitride layer is installed on metal layer
Trip and concealed metal layer.
Specific embodiment
Below in reference to Fig. 1 a, Fig. 1 b, Fig. 2 a and Fig. 2 b, by one embodiment, the present invention will be described in more detail.Fig. 1 a and
Fig. 2 a is identical and schematically shows the top view of the construction of touch sensing device according to the present invention, wherein in Fig. 1 b and
In Fig. 2 b, the bedded structure of contact structures is shown respectively with the cross section of amplification.A part of touch sensing device is herein
It is shown by dashed lines in Fig. 1 a and Fig. 2 a.Touch sensing device 10 is the part of touch panel and has by electrically insulating material system
At the optically transparent substrate 1 of (such as being made of glass or transparent plastic).It is being configured as " externally embedded type " touch sensing dress
In the range set, the substrate of touch sensing device is formed simultaneously the color filter substrate of LCD display, however the substrate is also implementable
For individual substrate.The embodiment is detected based on the condenser type of touch, and in function and structurally corresponding in JP2013/20347
In projective capacitive touch panel.Electrode necessary to being detected for condenser type by multiple layering touch sensing element 2x and
2y is formed, these elements with the pattern of checkerboard be arranged in it is on the same side of substrate, by arranging and going in the grid formed, and by
Optically transparent conductive material (for example, tin indium oxide (ITO)) construction.In order to illustrate being shown in figure with different shades
Two electrodes.The two electrodes are isolated from each other at crosspoint by electric insulation layer 3.Here, the one of touch sensing element
A group (such as 2y) connects in each corner each other in an electrically conductively in vertical direction, and another group of touch sensing element
Group 2x is electric interruption at present.This is followed by electric insulation layer 3.The group 2x of touch sensing element passes through bridge in the horizontal direction
The contact structures 4 that connect and be in electrical contact.The contact structures construct in three layers of form in the present embodiment and have by nitrogen oxidation
Layer 5 made of molybdenum and by high conductivity metal (such as Al, Mo, Cu, Ag or Au or based on the conjunction of one of these metals
Gold) made of metal layer 6.In addition, another Mo, W, Ti, Nb or Ta or made of the alloy based on one of these metals
A metal layer 7 preferably uses with used in oxynitride layer identical metal or phase used as coating herein
Same alloy.This layer 7 is as made of high conductivity metal, the diffusion barrier and/or protective layer of underlying layer 6
(resisting mechanical failure, burn into moisture, sweat etc.).The layer made of nitrogen oxidation molybdenum is in the side of inspecting of the user of touch panel
It is installed on two metal layer upstreams on to 20 and hides two metal layers.
Each column of touch sensing element 2x are similar to each row of touch sensing element 2y and control and the analysis ministry of electronics industry
Part (this is not shown in the figure) electrical connection.Control and analysis electronic component detection are changed by touching the capacitor induced, and about touch
Position come analyze the grade change.Electrical connection at least occurs passing through contact structures 4' touch panel visible for user
Region in, contact structures 4' be similar to bridge joint contact structures 4 and with three layers of modal creation and have by nitrogen oxidation
Layer 5 made of molybdenum, A1, Mo, Cu, Ag or Au or based on metal layer 6 made of alloy a kind of in these metals and by Mo, W,
Ti, Nb or Ta or based on metal layer 7 made of alloy a kind of in these metals.
By means of sputtering sedimentation, using corresponding target by the layer of touch sensing element and contact structures 4 or 4' with larger
Area and deposit, here, supply oxygen and the formation of metal oxynitride layer occurs when nitrogen.Pass through photolithography
And subsequent wet chemical engraving method (use etching solution made of phosphoric acid, nitric acid and acetic acid (PAN etch solution)) makes
The layer structuring of coating.
In the scope of the experimentalists and technicians, the various layers with the nitrogen oxidation molybdenum of different constituents are manufactured, are compared in table 1
Compared with its property and corresponding metal, metal oxide and metal nitride layer.Use respectively the target made of pure molybdenum, by molybdenum with
Target made of the alloy of 6 atom % tantalums or the target made of the alloy of molybdenum and 10 atom % niobiums are as sputtering target material.Pass through
Nitrogen oxidation molybdenum layer is reactively sputtered by metal targets using Ar/O2/N2 mixture.Here, reactant gas in this process
Relative scale be about 33 volume % for oxide O2, and for O2 and 15 bodies that nitrogen oxides is about 23 volume %
The N2 of product %.Process gas pressure is about 5*10-3mbar。
In order to determine reflectivity, glass is coated with nitrogen oxidation molybdenum or reference material and the coating made of 250nm Al
Glass substrate (Coming Eagle XG, 50 × 50 × 0.7mm3).Here, omit third metal layer because its to measurement result without
It influences.Using 950 spectrometer measurement of Perkin Elmer Lambda via the reflectivity (side of inspecting of observer of glass substrate
To 20).In order to obtain alap reflectivity, the thickness degree of nitrogen oxidation molybdenum changes in the range of 35nm to 75nm, wherein
It can reach optimum in the range of 40nm to 60nm.
The resistance of nitrogen oxidation molybdenum and reference material is measured based on sample, wherein glass substrate is coated with the layer of 55nm thickness.
Implement to measure using four-point method (commercially available 4 measuring heads).
In order to determine wet etch rate, the layer for being respectively provided with 300nm thickness is used.There is 66% phosphorus at 40 DEG C
Acid, 10% acetic acid, 5% nitric acid and water (residue), in PAN solution after stirring measure wet etch rate.Here, by sample
This is immersed in etching solution respectively by 5 seconds and then flushing and drying.Then to the sample after drying on precision balance
It weighs.These steps are repeated, until dissolving entire layer.Etch-rate is calculated by the Mass lost with etching period.
Table 1
* embodiment according to the present invention is marked
Sample with nitrogen oxidation molybdenum shows the improved reflex behavior relative to molybdenum oxide.In addition, in Mo nitrogen oxidation
In the case where object or MoTa nitrogen oxides, the wet etch rate of the wet etch rate of metal or alloy and corresponding nitrogen oxides
Between difference can reduce.
Claims (9)
1. a kind of touch sensing device (10), has
The substrate (1) of optically transparent electrical isolation,
The sensor element (2x, 2y) of at least one optically transparent conduction, on the substrate, the sensor is first for setting
Part has transparent conducting oxide, transparent conducting polymer, carbon nanotube or graphene,
And at least one contact structures (4,4'), it is used to be in electrical contact the optically transparent sensor element (2x, 2y), it is special
Sign is,
The contact structures are formed in the form of multilayer: one of layer is by with constituent MoaXbOcNdMetal oxynitride
Object is made, wherein b >=0, and wherein X is from one of group's niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium element or to come from
The combination of group's niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and the multiple element in zirconium；And additionally have by Al, Mo, Cu,
Metal layer made of Ag or Au or based on metal layer made of alloy a kind of in these metals, made of metal oxynitride
Layer is located at metal layer upstream in the inspecting for user of the contact sensor device on direction,
For the metal oxynitride layer MoaXbOcNdFollowing relationship is applicable in:
0≤b≤0.25a；0.5≤c≤0.75；0.01≤d≤0.2 and a+b+c+d=1 and c+d≤0.8.
2. touch sensing device according to claim 1, which is characterized in that the institute made of the metal oxynitride
State the reflectivity that layer has < 20%.
3. touch sensing device according to claim 1 or 2, which is characterized in that the metal oxynitride layer
MoaXbOcNdThe oxygen atom having is at least 3 times to most 9 times of nitrogen-atoms.
4. touch sensing device according to claim 1, which is characterized in that form the biography as sensor electrode
Sensor component is arranged in the form of grid, and plurality of first sensor electrode is arranged at different locations in a first direction,
Multiple second sensor electrodes are arranged at different locations in a second direction, and the sensor electrode leads at crosspoint respectively
Cross at least one electric insulation layer and be isolated from each other, and multiple first sensor electrodes at the crosspoint by with institute
State the contact structures (4) contact of metal oxynitride.
5. touch sensing device according to claim 1, which is characterized in that (4') the contact structures are embodied as being used for
The contact terminal that touch sensing element is electrically connected with control and/or analysis electronic component.
6. touch sensing device according to claim 1, is implemented as the touch sensing of projected capacitive.
7. a kind of touch sensing with touch sensing device as claimed in any of claims 1 to 6 is shown
Unit, wherein inspected on direction in the user of the contact sensor device, the touch sensing device is installed on aobvious
Show unit upstream, or be integrated in the display unit, the contact structures have at least one metal layer and at least one gold
Belong to oxynitride layer, wherein in the sequence of these layers, the metal oxynitride layer is more single than the metal layer and the display
First compartment of terrain is farther.
8. a kind of by sputtering target material Mo1-zXzFor manufacturing touch sensing dress as claimed in any of claims 1 to 6
The purposes for the contact structures set, wherein X is from one of group's niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium element or more
The combination of kind element, and 0≤z≤0.2.
9. a kind of method for manufacturing touch sensing device as claimed in any of claims 1 to 6, wherein
Sputtering target material Mo is used in the case where supplying oxygen and nitrogen1-zXzMetal oxynitride layer is manufactured by vapor deposition method,
Middle X be from one of group's niobium, tantalum, vanadium, tungsten, chromium, rhenium, hafnium, titanium and zirconium element or come since then group's niobium, tantalum, vanadium, tungsten,
The combination of multiple element in chromium, rhenium, hafnium, titanium and zirconium, and 0≤z≤0.2.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATGM319/2013U AT13879U1 (en) | 2013-10-04 | 2013-10-04 | Touch sensor assembly |
| ATGM319/2013 | 2013-10-04 | ||
| PCT/AT2014/000178 WO2015048828A1 (en) | 2013-10-04 | 2014-10-01 | Touch sensor arrangement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105593800A CN105593800A (en) | 2016-05-18 |
| CN105593800B true CN105593800B (en) | 2019-11-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480054704.5A Active CN105593800B (en) | 2013-10-04 | 2014-10-01 | Touch sensing device |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP6747970B2 (en) |
| KR (1) | KR102388979B1 (en) |
| CN (1) | CN105593800B (en) |
| AT (1) | AT13879U1 (en) |
| TW (1) | TWI623871B (en) |
| WO (1) | WO2015048828A1 (en) |
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| KR101844134B1 (en) | 2015-03-27 | 2018-03-30 | 주식회사 엘지화학 | Conductive structure body, method for manufacturing thereof and electrode comprising conductive structure body |
| US11293088B2 (en) * | 2015-12-07 | 2022-04-05 | Lg Chem, Ltd. | Conductive structure, method for manufacturing same, and electrode comprising conductive structure |
| JP6575601B2 (en) | 2016-04-01 | 2019-09-18 | 凸版印刷株式会社 | Print body, print body management apparatus, information output system, page identification method of print body, book cover, cover of print body |
| TWI581158B (en) * | 2016-06-01 | 2017-05-01 | 友達光電股份有限公司 | Touch panel and method for manufacturing the same |
| KR102573333B1 (en) * | 2016-06-28 | 2023-08-31 | 삼성디스플레이 주식회사 | Display device |
| US10151953B2 (en) * | 2017-02-22 | 2018-12-11 | A. U. Vista, Inc. | In-plane switching display having protrusion electrodes with metal enhanced adhesion |
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| CN110872687B (en) * | 2018-09-03 | 2022-07-19 | 大同特殊钢株式会社 | Laminate and target material |
| TWI722860B (en) * | 2020-04-08 | 2021-03-21 | 新唐科技股份有限公司 | Gas sensing material and gas sensor |
| CN114510167B (en) * | 2020-11-17 | 2024-04-12 | 瀚宇彩晶股份有限公司 | Touch sensing panel |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN105593800A (en) | 2016-05-18 |
| TW201528096A (en) | 2015-07-16 |
| KR102388979B1 (en) | 2022-04-20 |
| KR20160067849A (en) | 2016-06-14 |
| AT13879U1 (en) | 2014-10-15 |
| JP2016533562A (en) | 2016-10-27 |
| WO2015048828A1 (en) | 2015-04-09 |
| TWI623871B (en) | 2018-05-11 |
| JP6747970B2 (en) | 2020-08-26 |
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