TWI642746B - An underfill composition, filling method and electrical component by using thereof - Google Patents

An underfill composition, filling method and electrical component by using thereof Download PDF

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TWI642746B
TWI642746B TW106125277A TW106125277A TWI642746B TW I642746 B TWI642746 B TW I642746B TW 106125277 A TW106125277 A TW 106125277A TW 106125277 A TW106125277 A TW 106125277A TW I642746 B TWI642746 B TW I642746B
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underfill
diglycidyl ether
substrate
filling
wafer
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TW106125277A
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Chinese (zh)
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TW201910474A (en
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鄭憲徽
伍得
顏銘佑
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武漢市三選科技有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

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  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本發明提供一種底部填充膠組成物,其包含環氧樹脂、改質胺硬化劑及無機填充劑。本發明之底部填充膠組成物無需額外添加應力釋放劑及增強劑,在硬化後不會產生脆化問題,具有彈性及強韌性,能提高被封裝之電子組件的可靠性。 The present invention provides an underfill composition comprising an epoxy resin, a modified amine hardener, and an inorganic filler. The underfill composition of the present invention does not require additional stress releasing agents and reinforcing agents, does not cause embrittlement problems after hardening, has elasticity and toughness, and can improve the reliability of the packaged electronic components.

Description

底部填充膠組成物及使用其之底部填充方法與電子組裝元件 Underfill composition and underfill method and electronic assembly component using same

本發明係關於一種底部填充膠組成物,特別係半導體晶片及封裝基板間之底部填充膠組成物。 The present invention relates to an underfill composition, particularly an underfill composition between a semiconductor wafer and a package substrate.

電子產品日益精細及小型化,使得積體電路也隨之微型化,而如何能有效封裝晶片於微型化的電子組件中,則為現在封裝技術的重要發展之一。晶片封裝時,晶片及基板的熱膨脹係數不同,連接晶片的晶粒會在基板間承受不均勻的應力,形成封裝的成體中間薄及周邊厚的情況,致使封裝晶片於熱循環測試時(即冷熱衝擊轉換下),周邊的晶粒會發生容易脫落,封裝可靠性降低。為解決此問題,一般會在晶片及基材之間加入底部填充膠,藉由底部填充膠分散及吸收晶片表面所承受的應力,從而達到提高產品可靠性之目的。 The increasingly sophisticated and miniaturized electronic products have led to the miniaturization of integrated circuits, and how to effectively package wafers in miniaturized electronic components is one of the important developments in packaging technology today. When the chip is packaged, the thermal expansion coefficients of the wafer and the substrate are different, and the crystal grains of the bonded wafer are subjected to uneven stress between the substrates, forming a thin intermediate portion of the package and a thick portion of the periphery, so that the packaged wafer is subjected to thermal cycle test (ie, Under the thermal shock conversion, the surrounding crystal grains are easily peeled off, and the package reliability is lowered. In order to solve this problem, an underfill is generally added between the wafer and the substrate, and the underfill is used to disperse and absorb the stress on the surface of the wafer, thereby improving the reliability of the product.

底部填充膠通常以具有高流動性、高玻璃轉化溫及低熱膨脹係數的性能為佳。填充填充膠的填充方式包含有毛細流動、非流動型底膠填充、模鑄型底膠填充及晶片級底膠填充等。 Underfills are generally preferred for their high flow, high glass transition temperature and low coefficient of thermal expansion. Filler filling methods include capillary flow, non-flowing primer filling, die-cast primer filling, and wafer-level primer filling.

在特殊情況下,例如發生封裝晶片測試不合格時,須將晶片從基板上取下時,會需要將底部填充膠移除,重新進行封裝。為了符合此 需求,一般底部填充膠也需要有離形性,在需要被移除時,能夠從晶片及基板之間完整被剝離。 In special cases, such as when the package wafer test fails, the wafer must be removed from the substrate and the underfill must be removed and repackaged. In order to comply with this In general, the underfill is also required to have a release property, and can be completely peeled off from between the wafer and the substrate when it needs to be removed.

現有的底部填充膠組成物,主要成分為環氧樹脂搭配二氧化矽。然而,環氧樹脂在硬化後的彈性不佳,往往會有過硬並脆化的問題發生,降低了底部填充膠的可靠性,導致封裝後晶片在熱循環測試時,會有底部填充膠沒有微略剝離及不服貼在晶片及基板之間,甚至裂開及分層。為解決此問題,一般會另添加應力釋放劑(stress release agent)或增強劑等輔助劑在環氧樹脂中,但須耗費大量的時間心力試驗材料成本才可找到合適的輔助劑及配方比例進行添加。據此,本發明者研發出一種底部填充膠組成物,其具有改質胺硬化劑,且無需另添加應力釋放劑或增強劑等輔助劑,即可增加硬化後底部填充膠的彈性及強韌性。 The existing underfill composition is mainly composed of an epoxy resin and cerium oxide. However, the epoxy resin has poor elasticity after hardening, and there is often a problem of excessive hardening and embrittlement, which reduces the reliability of the underfill, and causes the underfill to have no underfill during the thermal cycle test. Slightly peeled off and not adhered between the wafer and the substrate, even cracked and layered. In order to solve this problem, an auxiliary agent such as a stress release agent or a reinforcing agent is generally added in the epoxy resin, but it takes a lot of time to test the material cost to find a suitable adjuvant and a formulation ratio. Add to. Accordingly, the present inventors have developed an underfill composition having a modified amine hardener and increasing the elasticity and toughness of the underfill after hardening without the addition of an auxiliary agent such as a strain release agent or a reinforcing agent. .

是以,本發明提供一種底部填充膠組成物,其包含環氧樹脂、改質胺硬化劑及無機填充劑。 Therefore, the present invention provides an underfill composition comprising an epoxy resin, a modified amine hardener, and an inorganic filler.

於較佳實施例中,該改質胺硬化劑為二縮水甘油醚及聚氧代丙烯以莫耳比1:1~1:3反應所得。 In a preferred embodiment, the modified amine hardener is obtained by reacting diglycidyl ether and polyoxypropylene with a molar ratio of 1:1 to 1:3.

於較佳實施例中,該聚氧代丙烯二胺具有下式(1)結構: ,n為5~33。 In a preferred embodiment, the polyoxypropylene diamine has the structure of the following formula (1): , n is 5~33.

於較佳實施例中,該聚氧代丙烯二胺之分子量為400~2000。 In a preferred embodiment, the polyoxypropylene diamine has a molecular weight of from 400 to 2,000.

於較佳實施例中,該二縮水甘油醚可選自由雙酚A二縮水甘油醚、雙酚F二縮水甘油醚、雙酚S二縮水甘油醚所構成之群組。 In a preferred embodiment, the diglycidyl ether may be selected from the group consisting of bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, and bisphenol S diglycidyl ether.

於較佳實施例中,中該二縮水甘油醚為雙酚A二縮水甘油醚。 In a preferred embodiment, the diglycidyl ether is bisphenol A diglycidyl ether.

於較佳實施例中,該環氧樹脂、該改質胺硬化劑及該無機填充劑之質量比為5~15:10~50:40~60。 In a preferred embodiment, the epoxy resin, the modified amine hardener, and the inorganic filler have a mass ratio of 5 to 15:10 to 50:40 to 60.

本發明另提供一種底部填充膠之填充方法,其包含以下步驟:(1)使用一模具固定器固定一晶片及一基板,使該晶片及基板之間形成一填充穴;(2)將該填充穴真空抽氣,並使用如上述之填充膠組成物均勻地佈滿該填充穴,加熱固化後完成填充。 The present invention further provides a method for filling an underfill, comprising the steps of: (1) using a mold holder to fix a wafer and a substrate to form a filling hole between the wafer and the substrate; (2) filling the filling; The cavity is evacuated and uniformly filled with the filling composition as described above, and the filling is completed after heating and solidification.

於較佳實施例中,該硬化之條件為溫度140~180℃,時間40~80分鐘。 In a preferred embodiment, the curing conditions are at a temperature of from 140 to 180 ° C for a period of from 40 to 80 minutes.

本發明另提供一種電子組裝元件,其包含一晶片及一基板,該晶片及基板之間有填充如上述之填充膠組成物。 The invention further provides an electronic assembly component comprising a wafer and a substrate, and the filling composition as described above is filled between the wafer and the substrate.

1‧‧‧底部填充膠組成物 1‧‧‧ underfill composition

3‧‧‧改質胺硬化劑 3‧‧‧Modified amine hardener

5‧‧‧二氧化矽 5‧‧‧2 cerium oxide

7‧‧‧碳黑 7‧‧‧ carbon black

9‧‧‧環氧樹脂 9‧‧‧Epoxy resin

11‧‧‧底部填充膠 11‧‧‧ Underfill

13‧‧‧晶片 13‧‧‧ wafer

14‧‧‧填充穴 14‧‧‧ Filling

15‧‧‧晶粒 15‧‧‧ grain

17‧‧‧基板 17‧‧‧Substrate

圖1為本發明之底部填充膠及其添充方法之示例。 Fig. 1 is an illustration of an underfill of the present invention and a method of filling the same.

在下文中,將利用具體實施例特別描寫本發明所揭示之內容。然而,本發明所揭示之內容不限制於下列範例。 In the following, the disclosure of the invention will be specifically described using specific embodiments. However, the disclosure of the present invention is not limited to the following examples.

本發明提供一種底部填充膠組成物,其包含環氧樹脂、改質胺硬化劑及無機填充劑。其中,該環氧樹脂、該改質胺硬化劑及該無機填充劑之質量比為5~15:10~50:40~60。 The present invention provides an underfill composition comprising an epoxy resin, a modified amine hardener, and an inorganic filler. The mass ratio of the epoxy resin, the modified amine curing agent and the inorganic filler is 5 to 15:10 to 50:40 to 60.

上述之環氧樹脂可為通用於底部填充膠組成物之環氧樹脂,其包含雙酚A型環氧樹脂、溴化雙酚A型環氧樹脂、氫化雙酚A型環氧樹脂、雙酚F型環氧樹脂、脂肪族環氧樹脂、脂環族環氧樹脂、松香改性環 氧樹脂脂、酚醛清漆型環氧樹脂、醚系列或多醚系列環氧樹脂、含環氧乙烷環之聚丁二烯、聚矽氧烷環氧基共聚物樹脂等,其中以雙酚A型環氧樹脂為佳。 The above epoxy resin may be an epoxy resin commonly used for an underfill composition, which comprises a bisphenol A type epoxy resin, a brominated bisphenol A type epoxy resin, a hydrogenated bisphenol A type epoxy resin, and a bisphenol. F type epoxy resin, aliphatic epoxy resin, alicyclic epoxy resin, rosin modified ring Oxygen resin, novolak type epoxy resin, ether series or polyether series epoxy resin, oxirane ring-containing polybutadiene, polyoxyalkylene epoxy group copolymer resin, etc. Type epoxy resin is preferred.

上述之無機填充劑可為通用於底部填充膠組成物之無機填充劑,其包含熔融二氧化矽或結晶二氧化矽等二氧化矽、二氧化鈦、氧化鋁、氧化鈹、氧化鋯、鋯石、氮化矽、氮化硼、氮化鋁、氧化鎂、矽酸鎂、碳酸鈣、碳化矽、鈦酸鉀、鋁、矽酸鎂石、塊滑石、尖晶石、玻璃纖維或富鋁紅柱石等。 The above inorganic filler may be an inorganic filler commonly used for an underfill composition, which comprises cerium oxide such as molten cerium oxide or crystalline cerium oxide, titanium oxide, aluminum oxide, cerium oxide, zirconium oxide, zircon, nitrogen. Plutonium, boron nitride, aluminum nitride, magnesium oxide, magnesium silicate, calcium carbonate, barium carbide, potassium titanate, aluminum, magnesium silicate, talc, spinel, glass fiber or mullite .

上述之改質胺硬化劑為二縮水甘油醚及聚氧代丙烯以莫耳比1:1~1:5反應所得,較佳為1:1~1:3,更佳為1:1~1:2。其中,該聚氧代丙烯具有下式(1)結構: ,n為5~33;實例包含聚醚 二胺D系列(JEFFAMINE D-series)的POA400(n為5~6,分子量400)及POA2000(n為33,分子量2000)。其中,該二縮水甘油醚醚可選自由雙酚A二縮水甘油醚、雙酚F二縮水甘油醚、雙酚S二縮水甘油醚所構成之群,且以雙酚A二縮水甘油醚為佳。 The above modified amine hardener is obtained by reacting diglycidyl ether and polyoxypropylene with a molar ratio of 1:1 to 1:5, preferably 1:1 to 1:3, more preferably 1:1 to 1 :2. Wherein, the polyoxypropylene has the structure of the following formula (1): , n is 5 to 33; examples include polyether diamine D series (JEFFAMINE D-series) POA400 (n is 5-6, molecular weight 400) and POA2000 (n is 33, molecular weight 2000). Wherein, the diglycidyl ether ether may be selected from the group consisting of bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, bisphenol S diglycidyl ether, and preferably bisphenol A diglycidyl ether. .

上述之底部填充膠組成物亦可添加碳黑等著色劑、消泡劑、抗氧化劑或其他添加劑等。 The above underfill composition may also be added with a coloring agent such as carbon black, an antifoaming agent, an antioxidant or other additives.

本發明之底部填充膠之填充方法,其包含以下步驟:(1)使用一模具固定器固定一晶片及一基板,使該晶片及基板之間形成一填充穴;(2)將該填充穴真空抽氣,並使用如上述之底部填充膠組成物均勻地佈 滿該填充穴,加熱固化後完成填充。其中,該晶片上有晶粒;該硬化之條件為溫度140~180℃,時間40~80分鐘,例如140℃、145℃、150℃、155℃、160℃、165℃、170℃、175℃或180℃,及40分鐘、45分鐘、50分鐘、55分鐘、60分鐘、65分鐘、70分鐘、75分鐘或80分鐘。 The method for filling an underfill according to the present invention comprises the steps of: (1) fixing a wafer and a substrate with a mold holder to form a filling hole between the wafer and the substrate; and (2) vacuuming the filling hole. Pumping and evenly spreading the underfill composition as described above Fill the filling hole, complete the filling after heating and curing. Wherein, the wafer has crystal grains; the curing condition is temperature 140-180 ° C, time 40-80 minutes, such as 140 ° C, 145 ° C, 150 ° C, 155 ° C, 160 ° C, 165 ° C, 170 ° C, 175 ° C Or 180 ° C, and 40 minutes, 45 minutes, 50 minutes, 55 minutes, 60 minutes, 65 minutes, 70 minutes, 75 minutes or 80 minutes.

本發明之底部填充膠及其添充方法之實例如圖1所示,該底部填充膠組成物1係包含改質胺硬化劑3、二氧化矽5、碳黑7及環氧樹脂9配製成底部填充膠11;隨後,使用模具固定器將一晶片13及一基板15固定,使該晶片13及基板15之間形成一填充穴14,該晶片13上附有晶粒15;將該填充穴14真空抽氣,並使用如底部填充膠11均勻地佈滿該填充穴14,加熱固化後完成填充。 An example of the underfill and the filling method of the present invention is shown in FIG. 1. The underfill composition 1 comprises a modified amine hardener 3, cerium oxide 5, carbon black 7, and epoxy resin 9 Forming the underfill 11; subsequently, fixing a wafer 13 and a substrate 15 using a mold holder, such that a filling hole 14 is formed between the wafer 13 and the substrate 15, and the wafer 13 is attached with a die 15; The hole 14 is evacuated and uniformly filled with the filling hole 14 using, for example, an underfill 11, and the filling is completed after heating and solidification.

本發明之電子組裝元件,其包含一晶片及一基板,該晶片及基板之間有填充如上述之底部填充膠。 The electronic assembly component of the present invention comprises a wafer and a substrate, and the underfill is filled between the wafer and the substrate.

[具體實施例][Specific embodiment]

以下實施方式不應視為過度地限制本發明。本發明所屬技術領域中具有通常知識者可在不背離本發明之精神或範疇的情況下對本文所討論之實施例進行修改及變化,而仍屬於本發明之範圍。 The following embodiments are not to be considered as limiting the invention in any way. Modifications and variations of the embodiments discussed herein may be made without departing from the spirit and scope of the invention, and still fall within the scope of the invention.

製備例1. 製備改質胺硬化劑(聚醚二胺POA400-雙酚A二縮水甘油醚(POA400-DGEBA))Preparation Example 1. Preparation of a modified amine hardener (polyether diamine POA400-bisphenol A diglycidyl ether (POA400-DGEBA))

將50g雙酚A二縮水甘油醚(DGEBA epoxy,147mmol)及88.2g聚醚二胺POA400(JEFFAMINE D-series POA400,220mmol)置入反應器中,於反應器中在25℃下旋轉混合24小時,得到改質胺硬化劑聚醚二胺POA400-雙酚A二縮水甘油醚(POA400-DGEBA),該反應之反應式如式(3) 所示。 50 g of bisphenol A diglycidyl ether (DGEBA epoxy, 147 mmol) and 88.2 g of polyether diamine POA400 (JEFFAMINE D-series POA400, 220 mmol) were placed in a reactor and spun in a reactor at 25 ° C for 24 hours. The modified amine hardener polyether diamine POA400-bisphenol A diglycidyl ether (POA400-DGEBA) is obtained, and the reaction formula of the reaction is as shown in formula (3) Shown.

製備例2. 製備改質胺硬化劑(聚醚二胺POA2000-雙酚A二縮水甘油醚(POA2000-DGEBA))Preparation Example 2. Preparation of a modified amine hardener (polyether diamine POA2000-bisphenol A diglycidyl ether (POA2000-DGEBA))

將50g雙酚A二縮水甘油醚(DGEBA epoxy,147mmol)及392g聚醚二胺POA2000(JEFFAMINE D-series POA2000,196mmol)置入反應器中,於反應器中在25℃下旋轉混合24小時,得到改質胺硬化劑聚醚二胺POA2000-雙酚A二縮水甘油醚(POA2000-DGEBA),該反應之反應式如式(3)所示。 50 g of bisphenol A diglycidyl ether (DGEBA epoxy, 147 mmol) and 392 g of polyether diamine POA2000 (JEFFAMINE D-series POA2000, 196 mmol) were placed in a reactor and spun in a reactor at 25 ° C for 24 hours. A modified amine hardener polyether diamine POA2000-bisphenol A diglycidyl ether (POA2000-DGEBA) was obtained, and the reaction formula of the reaction is shown in the formula (3).

實施例1. 本發明之底部填充膠組成物1及使用其底部填充Example 1. Underfill composition 1 of the present invention and underfill using the same

取10g雙酚A環氧樹脂(南亞塑膠,NPEL-128)、40g製備例1之改質胺硬化劑、50g二氧化矽(日本Admatechs,SE2050)及0.1g碳黑(德國Orion,NEROX505)在25℃下均勻混合3分鐘後,即得到底部填充 膠組成物1。隨後,使用模具固定器將晶片及基板固定,使該晶片及基板之間形成填充穴,在25℃於3分鐘內將該填充穴真空抽氣並將該底部填充膠組成物1均勻地佈滿該填充穴後,在165℃加熱固化1小時後即完成填充。 Take 10g of bisphenol A epoxy resin (Nanya plastic, NPEL-128), 40g of modified amine hardener of preparation example 1, 50g of cerium oxide (Admatechs, SE2050) and 0.1g of carbon black (Orion, NEROX505, Germany) After mixing uniformly at 25 ° C for 3 minutes, the underfill is obtained. Glue composition 1. Subsequently, the wafer and the substrate are fixed by using a mold holder, a filling hole is formed between the wafer and the substrate, and the filling hole is vacuum-extracted in 25 minutes at 25 ° C and the underfill composition 1 is evenly covered. After the filling, the filling was completed after heating and curing at 165 ° C for 1 hour.

實施例2. 本發明之底部填充膠組成物2及使用其底部填充Example 2. Underfill composition 2 of the present invention and underfill using the same

取10g雙酚A環氧樹脂(南亞塑膠,NPEL-128)、40g製備例2之改質胺硬化劑、50g二氧化矽(日本Admatechs,SE2050)及0.1g碳黑(德國Orion,NEROX505)在25℃下均勻混合3分鐘,即得到底部填充膠組成物2。隨後,使用模具固定器將晶片及基板固定,使該晶片及基板之間形成填充穴,在25℃於3分鐘內將該填充穴真空抽氣並將該底部填充膠組成物2均勻地佈滿該填充穴後,165℃加熱固化1小時後即完成底部填充。 Take 10g of bisphenol A epoxy resin (Nanya Plastics, NPEL-128), 40g of modified amine hardener of Preparation 2, 50g of cerium oxide (Admatechs, SE2050) and 0.1g of carbon black (Orion, NEROX505, Germany) The mixture was uniformly mixed at 25 ° C for 3 minutes to obtain an underfill composition 2. Subsequently, the wafer and the substrate are fixed by using a mold holder, a filling hole is formed between the wafer and the substrate, the filling hole is vacuum-extracted in 25 minutes at 25 ° C, and the underfill composition 2 is evenly covered. After the filling, the underfill was completed after heating and curing at 165 ° C for 1 hour.

比較例. 其他底部填充膠組成物及使用其封裝Comparative Example. Other underfill compositions and their packages

取50g雙酚A環氧樹脂(南亞塑膠,NPEL-128)、50g二氧化矽(日本Admatechs,SE2050)、5g胺硬化劑(德國Degussa,100S雙氰胺)、5g增強劑(日本大日本油墨化學DIC,H360)及0.1g碳黑(德國Orion,NEROX505)在25℃下均勻混合3分鐘,即得到底部填充膠組成物。隨後,使用模具固定器將晶片及基板固定,使該晶片及基板之間形成填充穴,在25℃於3分鐘內將該填充穴真空抽氣並將該底部填充膠均勻地佈滿該填充穴後,165℃加熱固化1小時後即完成填充。 Take 50g bisphenol A epoxy resin (Nanya plastic, NPEL-128), 50g cerium oxide (Japan Admatechs, SE2050), 5g amine hardener (Degussa, Germany, 100S dicyandiamide), 5g enhancer (Japan Dainippon ink) Chemically DIC, H360) and 0.1 g of carbon black (Orion, NEROX 505, Germany) were uniformly mixed at 25 ° C for 3 minutes to obtain an underfill composition. Subsequently, the wafer and the substrate are fixed by using a mold holder, a filling hole is formed between the wafer and the substrate, the filling hole is vacuum-extracted in 25 minutes at 25 ° C, and the underfill is evenly filled with the filling hole. After that, the filling was completed after heating and curing at 165 ° C for 1 hour.

[熱循環測試][thermal cycle test]

將實施例1及2以及比較例所完成之底部填充後的晶片及基板,於濕敏等級(Moisture sensitive level,MSL)為3的情況下,進行熱循環TCB1000及TCC200的測試,觀察其等硬化後之底部填充膠組合物的可靠 性,其結果如表1所示: The underfill wafers and substrates obtained in Examples 1 and 2 and Comparative Examples were tested for thermal cycling TCB1000 and TCC200 at a Moisture Sensitive Level (MSL) of 3, and observed for hardening. The reliability of the bottom underfill composition is shown in Table 1:

由表1比較可知,在熱循環測試條件為MSL3及TCC200時,比較例之底部填充膠硬化物會從基板上分離且龜裂,相較之下,實施例1及2使用本發明之底部填充膠組成物,其等硬化物在二種熱循環測試條件下,都能維持原狀,並無沒有從基板上分離。由此可知,以往使用環氧樹脂搭配一般胺硬化劑之底部填充膠,縱使在有另添加增強劑,其強韌性仍不佳,然而,本發明之底部填充膠組成物,使用改質後的胺硬化劑,無須另外添加應力釋放劑及增強劑,在硬化後不會產生脆化問題,具有彈性及強韌性。是以,本發明之底部填充膠組成物具有較高的可靠性,不易變質。 As can be seen from the comparison of Table 1, when the thermal cycle test conditions were MSL3 and TCC200, the underfill hardener of the comparative example was separated and cracked from the substrate, and in contrast, Examples 1 and 2 used the underfill of the present invention. The gel composition, such as the hardened material, remained in its original state under both thermal cycling test conditions and did not separate from the substrate. It can be seen that in the past, an epoxy resin is used in combination with an underfill of a general amine hardener, and the toughness is still poor even when an additional reinforcing agent is added. However, the underfill composition of the present invention is modified. The amine hardener does not require the addition of a stress releasing agent and a reinforcing agent, and does not cause embrittlement after hardening, and has elasticity and toughness. Therefore, the underfill composition of the present invention has high reliability and is not easily deteriorated.

Claims (7)

一種底部填充膠組成物,其包含環氧樹脂、改質胺硬化劑及無機填充劑;該環氧樹脂、該改質胺硬化劑及該無機填充劑之質量比為5~15:10~50:40~60;其中,該改質胺硬化劑為二縮水甘油醚及聚氧代丙烯二胺以莫耳比1:1~1:3反應所得,該聚氧代丙烯二胺具有下式(1)結構: ,n為5~33。 An underfill composition comprising an epoxy resin, a modified amine hardener and an inorganic filler; the epoxy resin, the modified amine hardener and the inorganic filler have a mass ratio of 5 to 15:10 to 50 : 40~60; wherein the modified amine hardener is obtained by reacting diglycidyl ether and polyoxypropylene diamine with a molar ratio of 1:1 to 1:3, and the polyoxypropylene diamine has the following formula ( 1) Structure: , n is 5~33. 如請求項1所述之底部填充膠組成物,其中該聚氧代丙烯二胺之分子量為400~2000。 The underfill composition as claimed in claim 1, wherein the polyoxypropylenediamine has a molecular weight of from 400 to 2,000. 如請求項1至2任一項所述之底部填充膠組成物,其中該二縮水甘油醚可選自由雙酚A二縮水甘油醚、雙酚F二縮水甘油醚、雙酚S二縮水甘油醚所構成之群組。 The underfill composition according to any one of claims 1 to 2, wherein the diglycidyl ether is selected from the group consisting of bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, bisphenol S diglycidyl ether The group formed. 如請求項3所述之底部填充膠組成物,其中該二縮水甘油醚為雙酚A二縮水甘油醚。 The underfill composition of claim 3, wherein the diglycidyl ether is bisphenol A diglycidyl ether. 一種底部填充膠之填充方法,其包含以下步驟:(1)使用一模具固定器固定一晶片及一基板,使該晶片及基板之間形成一填充穴;(2)將該填充穴真空抽氣,並使用如請求項1至4任一項所述之底部填充膠組成物均勻地佈滿該填充穴,加熱固化後完成填充。 A method for filling an underfill, comprising the steps of: (1) fixing a wafer and a substrate with a mold holder to form a filling hole between the wafer and the substrate; and (2) vacuuming the filling hole. And filling the filling hole evenly with the underfill composition as described in any one of claims 1 to 4, and completing the filling after heat curing. 如請求項5所述之底部填充方法,其中該硬化之條件為溫度140~180℃,時間40~80分鐘。 The underfill method according to claim 5, wherein the curing condition is a temperature of 140 to 180 ° C and a time of 40 to 80 minutes. 一種電子組裝元件,其包含一晶片及一基板,該晶片及基板之間有填充如請求項1至4任一項所述之底部填充膠。 An electronic assembly component comprising a wafer and a substrate, the substrate and the substrate being filled with an underfill as claimed in any one of claims 1 to 4.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112409971A (en) * 2020-11-20 2021-02-26 湖北三选科技有限公司 Liquid mold sealing adhesive for protecting five sides of semiconductor chip and preparation method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110903794A (en) * 2019-11-22 2020-03-24 苏州优诺电子材料科技有限公司 Low-temperature-cured reworkable underfill material and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201219454A (en) * 2010-10-26 2012-05-16 Adeka Corp Resin composition
CN102939314B (en) * 2010-06-15 2016-07-06 巴斯夫欧洲公司 Cyclic carbonate purposes in composition epoxy resin
CN106653790A (en) * 2017-02-20 2017-05-10 苏州晶方半导体科技股份有限公司 Packaging structure and packaging method of iris recognition imaging module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102939314B (en) * 2010-06-15 2016-07-06 巴斯夫欧洲公司 Cyclic carbonate purposes in composition epoxy resin
TW201219454A (en) * 2010-10-26 2012-05-16 Adeka Corp Resin composition
CN106653790A (en) * 2017-02-20 2017-05-10 苏州晶方半导体科技股份有限公司 Packaging structure and packaging method of iris recognition imaging module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112409971A (en) * 2020-11-20 2021-02-26 湖北三选科技有限公司 Liquid mold sealing adhesive for protecting five sides of semiconductor chip and preparation method

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