TWI641979B - 感測元件以及感測顯示面板 - Google Patents

感測元件以及感測顯示面板 Download PDF

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TWI641979B
TWI641979B TW107101459A TW107101459A TWI641979B TW I641979 B TWI641979 B TW I641979B TW 107101459 A TW107101459 A TW 107101459A TW 107101459 A TW107101459 A TW 107101459A TW I641979 B TWI641979 B TW I641979B
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Taiwan
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source
sensing
electrically connected
region
display panel
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TW107101459A
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TW201933061A (zh
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杜佳豪
張國瑞
莊弘揚
鄭凱中
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友達光電股份有限公司
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Priority to TW107101459A priority Critical patent/TWI641979B/zh
Priority to CN201810200205.2A priority patent/CN108417588B/zh
Priority to US15/950,182 priority patent/US10355141B1/en
Application granted granted Critical
Publication of TWI641979B publication Critical patent/TWI641979B/zh
Publication of TW201933061A publication Critical patent/TW201933061A/zh

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    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display
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    • H01L27/144Devices controlled by radiation
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    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/1255Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract

一種感測元件,包括主動層、第一源極、第二源極、汲極以及閘極。主動層配置於基板上,其中主動層包括第一源極區、第二源極區、汲極區及通道區。第一源極與第一源極區電性連接。第二源極與第二源極區電性連接。汲極與汲極區電性連接。閘極與通道區於基板的法線方向上重疊,其中第一源極朝向通道區以第一方向延伸,第二源極朝向通道區以第二方向延伸,第一方向及第二方向與法線方向相交,且第一方向與第二方向之間具有不等於180度的夾角。

Description

感測元件以及感測顯示面板
本發明是有關於一種半導體元件及顯示面板,且特別是有關於一種感測元件以及感測顯示面板。
目前,外掛式(On-cell)感測顯示器需在顯示器外設置感測元件以進行感應操作,故隨著螢幕尺寸逐漸放大將會面臨產品良率、製造成本大幅提升的缺點。而內嵌式(In-cell)感測顯示器可以直接將感測元件嵌入顯示器中的陣列基板上,使得使用現有產能、調整光罩製程即可生產,不用額外投資龐大的資本支出,因此可減少貼合和組裝成本,並降低裝置的厚度與重量,擁有高良率、低成本、無尺寸限制等優點。
本發明提供一種感測元件,其具有提升的感測靈敏度,並且能感測多個方向上的形變。
本發明提供一種感測顯示面板,其適用於觸控感測應用及彎曲感測應用,並且具有提升的感測靈敏度,以及能感測多個 方向上的形變。
本發明之一實施方式的感測元件包括主動層、第一源極、第二源極、汲極以及閘極。主動層配置於基板上,其中主動層包括第一源極區、第二源極區、汲極區及通道區。第一源極與第一源極區電性連接。第二源極與第二源極區電性連接。汲極與汲極區電性連接。閘極與通道區於基板的法線方向上重疊,其中第一源極朝向通道區以第一方向延伸,第二源極朝向通道區以第二方向延伸,第一方向及第二方向與法線方向相交,且第一方向與第二方向之間具有不等於180度的夾角。
本發明之一實施方式的感測顯示面板包括至少一畫素單元,畫素單元包括第一掃描線、資料線、第一感測線、第二感測線、開關元件、驅動元件以及感測元件。第一掃描線、資料線、第一感測線以及第二感測線配置在基板上。開關元件電性連接於第一掃描線與資料線。驅動元件電性連接於開關元件。感測元件電性連接於驅動元件、第一感測線與第二感測線,且該感測元件包括主動層、第一源極、第二源極、汲極以及閘極。主動層配置於基板上,其中主動層包括第一源極區、第二源極區、汲極區及通道區。第一源極與第一源極區電性連接。第二源極與第二源極區電性連接。汲極與汲極區電性連接。閘極與通道區於基板的法線方向上重疊,其中第一源極朝向通道區以第一方向延伸,第二源極朝向通道區以第二方向延伸,第一方向及第二方向與法線方向相交,且第一方向與第二方向之間具有不等於180度的夾角。
基於上述,在本發明之一實施方式的感測顯示面板中,透過畫素單元包括電性連接於第一掃描線與資料線的開關元件,電性連接於開關元件的驅動元件,以及電性連接於驅動元件、第一感測線與第二感測線的感測元件,其中感測元件包括主動層、第一源極、第二源極、汲極以及閘極,主動層包括與第一源極電性連接的第一源極區、與第二源極電性連接的第二源極區、與汲極電性連接的汲極區及通道區,第一源極朝向通道區以第一方向延伸,第二源極朝向通道區以第二方向延伸,第一方向及第二方向與基板的法線方向相交,且第一方向與第二方向之間具有不等於180度的夾角,藉此感測元件會有路徑不相同的兩道電流流經,因而使得感測顯示面板具有提升的載子收集率。如此一來,當感測顯示面板應用於觸控感測及彎曲感測,感測顯示面板能具有提升的感測靈敏度,以及當感測顯示面板應用於彎曲感測,感測顯示面板能經由感測元件因形變而產生的電流變化量來對多個方向(例如第一方向及第二方向)上的彎折進行感測的動作。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施方式,並配合所附圖式作詳細說明如下。
10、30、40‧‧‧感測顯示面板
100‧‧‧基板
AL‧‧‧主動層
C‧‧‧電容器
CR‧‧‧通道區
d1‧‧‧第一方向
d2‧‧‧第二方向
DD、SD、ED‧‧‧汲極
DG、SG、EG‧‧‧閘極
Dl、Sl1、Sl2‧‧‧長邊
DL‧‧‧資料線
DR‧‧‧汲極區
DS、SS‧‧‧源極
DT‧‧‧驅動元件
E1、E2‧‧‧電極
EL1‧‧‧第一感測線
EL2‧‧‧第二感測線
ES1‧‧‧第一源極
ES2‧‧‧第二源極
ET、ET2、ET3‧‧‧感測元件
GI‧‧‧閘絕緣層
IL‧‧‧層間絕緣層
n‧‧‧法線方向
O‧‧‧發光元件
Oa‧‧‧陽極
Ob‧‧‧陰極
SL1‧‧‧第一掃描線
SL2‧‧‧第二掃描線
SR1‧‧‧第一源極區
SR2‧‧‧第二源極區
ST‧‧‧開關元件
U‧‧‧畫素單元
V1‧‧‧第一接觸窗
V2‧‧‧第二接觸窗
V3‧‧‧第三接觸窗
Vdd、Vss‧‧‧電壓源
θ、θ2‧‧‧夾角
圖1是依照本發明的一實施方式的感測顯示面板的局部等效電路圖。
圖2是圖1中的感測元件的上視示意圖。
圖3是圖1的感測顯示面板的局部剖面示意圖,其中剖面位置對應至圖2中的剖線I-I’的位置。
圖4是圖1的感測顯示面板的局部剖面示意圖,其中剖面位置對應至圖2中的剖線II-II’的位置。
圖5是依照本發明的另一實施方式的感測元件的上視示意圖。
圖6是依照本發明的另一實施方式的感測顯示面板的局部剖面示意圖。
圖7是依照本發明的另一實施方式的感測顯示面板的局部剖面示意圖。
圖8是依照本發明的另一實施方式的感測顯示面板的局部等效電路圖。
圖9是依照本發明的另一實施方式的感測顯示面板的局部示意圖。
在本文中,為了便於理解,電晶體的源極與汲極的位置於圖中的標示為示範例,並不用以限定本發明。
另外應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「接觸」另一元件時,其可以直接在另一元件上或直接與另一元件接觸,或者存在有中間元件。相反地, 當元件被稱為「直接在另一元件上」或「直接接觸」另一元件時,不存在中間元件。
關於本文中所使用之「電性連接」,可指二或多個元件相互直接作實體或電性接觸,或是相互間接作實體或電性接觸,間接作實體或電性接觸之方式舉例為二元件之間藉由中間元件作實體或電性接觸,上述中間元件可為開關(例如薄膜電晶體)或是電阻、電容等元件,而「電性連接」還可指二或多個元件相互操作或動作。
圖1是依照本發明的一實施方式的感測顯示面板的局部等效電路圖。圖2是圖1中的感測元件的上視示意圖。圖3是圖1的感測顯示面板的局部剖面示意圖。圖4是圖1的感測顯示面板的局部剖面示意圖。特別一提的是,圖3的剖面位置可對應至圖2中的剖線I-I’的位置,以及圖4的剖面位置可對應至圖2中的剖線II-II’的位置。
請同時參照圖1至圖4,感測顯示面板10包括基板100以及配置於基板100上的畫素單元U,其中畫素單元U包括第一掃描線SL1、資料線DL、第一感測線EL1、第二感測線EL2、開關元件ST、驅動元件DT以及感測元件ET。另外,畫素單元U選擇性更包括電容器C以及發光元件O。值得一提的是,為了清楚說明,圖1中僅繪示出單一畫素單元U,但發明所屬領域中具有通常知識者應理解,感測顯示面板10實際上包括排列成陣列的多個畫素單元U。然而,本發明並不限於此。在其他實施方式中, 感測顯示面板10可包括至少一畫素單元U以及不同於畫素單元U的多個其他的畫素單元X,如圖9所示。在一實施方式中,其他的畫素單元X可不包含發光元件O,故此時其他的畫素單元X不具有顯示功能。在另一實施方式中,其他的畫素單元X可包含發光元件O但不包含感測元件ET,故此時其他的畫素單元X具有顯示功能而不具感測功能。在又一實施方式中,其他的畫素單元X可不包含發光元件O但包含感測元件ET,故此時其他的畫素單元X僅具有感測功能,而不具有顯示功能。在又一實施方式中,其他的畫素單元X可不包含發光元件O及感測元件ET,而包含能使其他的畫素單元X具有指紋辨識功能的元件。在又一實施方式中,其他的畫素單元X可不包含發光元件O及感測元件ET,而包含能使其他的畫素單元X具有壓力感測功能的元件。從另一觀點而言,在本實施方式中,感測顯示面板10屬於內嵌式感測顯示面板。
在本實施方式中,基板100的材質可為玻璃、石英或有機聚合物。
在本實施方式中,開關元件ST可以是發明所屬領域中具有通常知識者所周知的任一種薄膜電晶體,例如底閘極型薄膜電晶體或頂閘極型薄膜電晶體。在本實施方式中,開關元件ST的閘極SG與第一掃描線SL1電性連接,開關元件ST的源極SS與資料線DL電性連接,開關元件ST的汲極SD與電容器C的電極E1以及驅動元件DT電性連接。
在本實施方式中,驅動元件DT可以是發明所屬領域中具有通常知識者所周知的任一種薄膜電晶體,例如底閘極型薄膜電晶體或頂閘極型薄膜電晶體。在本實施方式中,驅動元件DT的閘極DG與開關元件ST的汲極SD以及電容器C的電極E1電性連接,驅動元件DT的汲極DD與發光元件O電性連接,驅動元件DT的源極DS與電壓源Vdd電性連接。
在本實施方式中,發光元件O可以是發明所屬領域中具有通常知識者所周知的任一種發光元件,例如為有機發光二極體(organic light emitting diode,OLED)或微發光二極體(micro light emitting diode,μLED)。在本實施方式中,發光元件O的陽極Oa與驅動元件DT的汲極DD以及電容器C的電極端E2電性連接,發光元件O的陰極Ob與電壓源Vss電性連接,但不以此為限。電壓源Vdd之電壓不同於電壓源Vss之電壓。在本實施方式中,發光元件O會經由開關元件ST、驅動元件DT以及電容器C所驅動,亦即畫素單元U具有2T1C的架構。然而,本發明並不限於此。在其他實施方式中,畫素單元U也可以具有1T1C的架構、3T1C的架構、3T2C的架構、4T1C的架構、4T2C的架構、5T1C的架構、5T2C的架構、6T1C的架構、或6T2C的架構、7T2C的架構或是任何可能的架構。
在本實施方式中,如圖2至圖4所示,感測元件ET包括主動層AL、第一源極ES1、第二源極ES2、汲極ED以及閘極EG。也就是說,在本實施方式中,感測元件ET為雙源極薄膜電晶體 (dual source thin film transistor)。一般來說,流經電晶體的電流是透過載子自源極端移動至汲極端而形成。基於此,透過雙源極的設計,感測元件ET得以使兩道電流流經。如此一來,感測元件ET的載子收集率提升因而具有提升的感測靈敏度。
在本實施方式中,主動層AL包括第一源極區SR1、第二源極區SR2、汲極區DR及通道區CR。在本實施方式中,通道區CR位於第一源極區SR1、第二源極區SR2與汲極區DR之間,且第一源極區SR1與汲極區DR彼此對向設置在主動層AL的通道區CR的兩側。如圖2所示,在本實施方式中,主動層AL的輪廓為T字形。另外,主動層AL的材質可包括多晶矽或金屬氧化物半導體材料,所述金屬氧化物半導體材料例如是氧化銦鎵鋅(Indium-Gallium-Zinc Oxide,IGZO)、氧化鋅(ZnO)、氧化錫(SnO)、氧化銦鋅(Indium-Zinc Oxide,IZO)、氧化鎵鋅(Gallium-Zinc Oxide,GZO)、氧化鋅錫(Zinc-Tin Oxide,ZTO)或氧化銦錫(Indium-Tin Oxide,ITO)。
在本實施方式中,閘極EG與主動層AL的通道區CR於基板100的法線方向n上重疊。在本實施方式中,閘極EG位在通道區CR的上方。也就是說,在本實施方式中,感測元件ET屬於頂閘極型薄膜電晶體。另外,基於導電性的考量,閘極EG可使用金屬材料,但本發明不限於此。在其他實施方式中,閘極EG亦可以使用其他導電材料,例如:合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或是金屬材料與其它導電材 料的堆疊層。
在本實施方式中,如圖3及圖4所示,感測顯示面板10更包括設置在閘極EG與主動層AL的通道區CR之間的閘絕緣層GI。在本實施方式中,閘絕緣層GI位於通道區CR上,且閘極EG位於閘絕緣層GI上。另外,如圖3及圖4所示,感測顯示面板10更包括覆蓋閘極EG的層間絕緣層IL。在本實施方式中,閘絕緣層GI及層間絕緣層IL可全面性地形成在基板100上。閘絕緣層GI及層間絕緣層IL的材質可為無機材料、有機材料或其組合,其中無機材料例如是氧化矽、氮化矽、氮氧化矽、或上述至少二種材料的堆疊層;有機材料例如是聚醯亞胺系樹脂、環氧系樹脂或壓克力系樹脂等高分子材料。另外,在本實施方式中,閘絕緣層GI及層間絕緣層IL為單一膜層,但本發明並不限於此。在其他實施方式中,閘絕緣層GI及層間絕緣層IL也可以由多個膜層堆疊而成。
在本實施方式中,如圖3及圖4所示,第一源極ES1經由第一接觸窗V1與主動層AL的第一源極區SR1電性連接,第二源極ES2經由第二接觸窗V2與主動層AL的第二源極區SR2電性連接,汲極ED經由第三接觸窗V3與主動層AL的汲極區DR電性連接。在本實施方式中,第一接觸窗V1、第二接觸窗V2及第三接觸窗V3形成在閘絕緣層GI及層間絕緣層IL中。如前文所述,在本實施方式中,第一源極區SR1與汲極區DR彼此對向設置於通道區CR的兩側,第一源極ES1與汲極ED彼此對向設置於 通道區CR的兩側。另外,基於導電性的考量,第一源極ES1、第二源極ES2與汲極ED可使用金屬材料,但本發明不限於此。在其他實施方式中,第一源極ES1、第二源極ES2與汲極ED亦可以使用其他導電材料,例如:合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或是金屬材料與其它導電材料的堆疊層。
在本實施方式中,如圖2所示,第一源極ES1朝向通道區CR以第一方向d1延伸,第二源極ES2朝向通道區CR以第二方向d2延伸,其中第一方向d1及第二方向d2與基板100的法線方向n垂直。在本實施方式中,第一源極ES1的長邊Sl1平行於第一方向d1,且第二源極ES2的長邊Sl2平行於第二方向d2。另外,在本實施方式中,第一方向d1與第二方向d2之間的夾角θ為90度。也就是說,在本實施方式中,第一源極ES1與第二源極ES2的延伸方向實質上垂直。另一方面,在本實施方式中,與第一源極ES1彼此對向設置的汲極ED同樣朝向通道區CR以第一方向d1延伸。也就是說,在本實施方式中,汲極ED的長邊Dl平行於第一方向d1,且汲極ED與第二源極ES2不是位於同一水平線上。在本實施方式中,第一源極ES1與汲極ED例如是位於同一水平線上。
如前文所述,載子自源極端移動至汲極端會形成電流,因此當第一方向d1與第二方向d2之間的夾角θ為90度時,第一源極ES1與汲極ED之間的電流路徑會與第二源極ES2與汲極ED 之間的電流路徑不同。在本實施方式中,第一源極ES1與汲極ED之間的電流路徑平行於第一方向d1,而第二源極ES2與汲極ED之間的電流路徑平行於第二方向d2。
在本實施方式中,感測顯示面板10是藉由感測元件ET因形變而產生電流變化量來進行感測的動作。在本文中,電流變化量定義為:形變後的電流值與形變前的電流值之間的差值佔形變前的電流值的比例。如此一來,透過第一源極ES1與汲極ED之間的電流路徑平行於第一方向d1,而第二源極ES2與汲極ED之間的電流路徑平行於第二方向d2,當感測顯示面板10應用於彎曲感測時,對於第一方向d1及第二方向d2上因彎折而造成的形變,感測顯示面板10都能感測。當沿第一方向d1彎折(即水平彎折)感測顯示面板10時,第一源極ES1與汲極ED之間會因形變而產生明顯的電流變化量;而當沿第二方向d2彎折(即垂直彎折)感測顯示面板10時,第二源極ES2與汲極ED之間會因形變而產生明顯的電流變化量。
另一方面,如前文所述,由於感測元件ET為雙源極(包括第一源極ES1及第二源極ES2)的設計,因此當沿第一方向d1彎折感測顯示面板10時,雖然第二源極ES2與汲極ED之間的電流變化量不明顯,但會有兩道電流流經的感測元件ET具有提升的載子收集率因而感測靈敏度提升。基於此,沿第二方向d2彎折感測顯示面板10時的情況可參閱以上說明而類推之。
在本實施方式中,請同時參照圖1及圖2,感測元件ET 的第一源極ES1與第一感測線EL1電性連接,感測元件ET的第二源極ES2與第二感測線EL2電性連接,感測元件ET的汲極ED與驅動元件DT的源極DS以及電壓源Vdd電性連接,以及感測元件ET的閘極EG與第一掃描線SL1以及開關元件ST的閘極SG電性連接。也就是說,在本實施方式中,感測元件ET電性連接於第一感測線EL1、第二感測線EL2、驅動元件DT與開關元件ST。
在本實施方式中,透過畫素單元U包括開關元件ST、驅動元件DT以及感測元件ET,其中感測元件ET包括主動層AL、第一源極ES1、第二源極ES2、汲極ED以及閘極,藉此感測元件ET會有兩道電流流經,因而感測顯示面板10能夠具有提升的載子收集率。如此一來,當感測顯示面板10應用於觸控感測及彎曲感測,感測顯示面板10能具有提升的感測靈敏度。
進一步,在本實施方式中,透過感測元件ET的第一源極ES1朝向通道區CR以第一方向d1延伸,第二源極ES2朝向通道區CR以第二方向d2延伸,其中第一方向d1及第二方向d2與法線方向n相交,且第一方向d1與第二方向d2之間具有不等於180度的夾角θ,使得第一源極ES1與汲極ED之間的電流路徑會與第二源極ES2與汲極ED之間的電流路徑不同。如此一來,當感測顯示面板10應用於彎曲感測,感測顯示面板10能經由感測元件ET因形變而產生的電流變化量來對多個不同的方向(例如第一方向d1及第二方向d2)上的彎折進行感測的動作。
另一方面,基於上述描述,為了使感測顯示面板10能感 測第一方向d1及第二方向d2上的形變,發明所述領域中具有通常知識者可理解,第一方向d1與第二方向d2之間的夾角θ並不限制為90度,只要夾角θ不等於180度即可。也就是說,在其他實施方式中,在第一方向d1與第二方向d2之間的夾角不等於180度的情況下,夾角可以不等於90度。以下,將參照圖5針對其他的實施型態進行說明。在此必須說明的是,下述實施方式沿用了前述實施方式的元件符號與部分內容,其中採用相同或相似的符號來表示相同或相似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施方式,下述實施方式不再重複贅述。
圖5是依照本發明的另一實施方式的感測元件的上視示意圖。請同時參照圖5及圖2,圖5的感測元件ET2與圖2的感測元件ET相似,因此相同或相似的元件以相同或相似的符號表示,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施方式。以下,將就兩者間的差異處做說明。
請參照圖5,在本實施方式中,主動層AL的輪廓為Y字形。在本實施方式中,第一源極區SR1、第二源極區SR2與汲極區DR分別位在主動層AL的三個端部上。
在本實施方式中,第一方向d1與第二方向d2之間的夾角θ2不等於180度也不等於90度。在本實施方式中,夾角θ2可為60度至120度。也就是說,在本實施方式中,第一源極ES1與第二源極ES2不是位於同一水平線上。
如前文所述,載子自源極端移動至汲極端形成電流,因此當第一方向d1與第二方向d2之間的夾角θ2不等於180度也不等於90度時,第一源極ES1與汲極ED之間的電流路徑會與第二源極ES2與汲極ED之間的電流路徑不同。在本實施方式中,第一源極ES1與汲極ED之間的電流路徑平行於第一方向d1,而第二源極ES2與汲極ED之間的電流路徑平行於第二方向d2。如此一來,透過第一源極ES1與汲極ED之間的電流路徑平行於第一方向d1,而第二源極ES2與汲極ED之間的電流路徑平行於第二方向d2,當包括感測元件ET2的感測顯示面板應用於彎曲感測時,對於第一方向d1及第二方向d2上因彎折而造成的形變,所述感測顯示面板都能感測。當沿第一方向d1彎折包括感測元件ET2的感測顯示面板時,第一源極ES1與汲極ED之間會因形變而產生明顯的電流變化量;而當沿第二方向d2彎折包括感測元件ET2的感測顯示面板時,第二源極ES2與汲極ED之間會因形變而產生明顯的電流變化量。
另一方面,由於感測元件ET2為雙源極(包括第一源極ES1及第二源極ES2)的設計,因此當沿第一方向d1彎折包括感測元件ET2的感測顯示面板時,雖然第二源極ES2與汲極ED之間的電流變化量不明顯,但會有兩道電流流經的感測元件ET2具有提升的載子收集率因而感測靈敏度提升。基於此,沿第二方向d2彎折包括感測元件ET2的感測顯示面板時的情況可參閱以上說明而類推之。
另外,在圖1至圖4的實施方式中,感測元件ET屬於頂閘極型薄膜電晶體,但本發明並不限於此。在其他實施方式中,感測元件ET可以是發明所述領域中具有通常知識者所周知的任一種類型的電晶體,例如底閘極型薄膜電晶體。以下,將參照圖6及圖7針對其他的實施型態進行說明。在此必須說明的是,下述實施方式沿用了前述實施方式的元件符號與部分內容,其中採用相同或相似的符號來表示相同或相似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施方式,下述實施方式不再重複贅述。
圖6是依照本發明的另一實施方式的感測顯示面板的局部剖面示意圖。圖7是依照本發明的另一實施方式的感測顯示面板的局部剖面示意圖。在此須說明的是,圖6的剖面位置可參照圖2中的剖線I-I’的位置,而圖7的剖面位置可參照圖2中的剖線II-II’的位置。另外,請同時參照圖6-7與圖3-4,圖6-7的感測顯示面板30與圖3-4的感測顯示面板10相似,因此相同或相似的元件以相同或相似的符號表示,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施方式。以下,將就兩者間的差異處做說明。
請同時參照圖6及圖7,在本實施方式中,閘極EG位在主動層AL的通道區CR的下方,且閘絕緣層GI覆蓋閘極EG。換言之,感測顯示面板30所包括的感測元件ET3屬於底閘極型薄膜電晶體。在本實施方式中,主動層AL的材質可包括非晶矽。另外, 在本實施方式中,第一源極ES1與主動層AL的第一源極區SR1直接接觸而彼此電性連接,第二源極ES2與主動層AL的第二源極區SR2直接接觸而彼此電性連接,汲極ED與主動層AL的汲極區DR直接接觸而彼此電性連接。
另外,在圖1的實施方式中,感測元件ET的閘極EG與開關元件ST的閘極SG電性連接於同一條掃描線(即第一掃描線SL1),但本發明並不限於此。在其他實施方式中,感測元件ET的閘極EG與開關元件ST的閘極SG也可以電性連接於不同的掃描線。以下,將參照圖8針對其他的實施型態進行說明。在此必須說明的是,下述實施方式沿用了前述實施方式的元件符號與部分內容,其中採用相同或相似的符號來表示相同或相似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施方式,下述實施方式不再重複贅述。
圖8是依照本發明的另一實施方式的感測顯示面板的局部等效電路圖。請同時參照圖8與圖1,圖8的感測顯示面板40與圖1的感測顯示面板10相似,因此相同或相似的元件以相同或相似的符號表示,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施方式。以下,將就兩者間的差異處做說明。
請參照圖8,在本實施方式中,感測顯示面板40的畫素單元U更包括不同於第一掃描線SL1的第二掃描線SL2。在本實施方式中,開關元件ST的閘極SG與第一掃描線SL1電性連接, 感測元件ET的閘極EG與第二掃描線SL2電性連接。
綜上所述,在上述實施方式的感測顯示面板中,透過畫素單元包括電性連接於第一掃描線與資料線的開關元件,電性連接於開關元件的驅動元件,以及電性連接於驅動元件、第一感測線與第二感測線的感測元件,其中感測元件包括主動層、第一源極、第二源極、汲極以及閘極,主動層包括與第一源極電性連接的第一源極區、與第二源極電性連接的第二源極區、與汲極電性連接的汲極區及通道區,第一源極朝向通道區以第一方向延伸,第二源極朝向通道區以第二方向延伸,第一方向及第二方向與基板的法線方向相交,且第一方向與第二方向之間具有不等於180度的夾角,藉此感測元件會有路徑不相同的兩道電流流經,因而使得感測顯示面板具有提升的載子收集率。如此一來,當感測顯示面板應用於觸控感測及彎曲感測,感測顯示面板能具有提升的感測靈敏度,以及當感測顯示面板應用於彎曲感測,感測顯示面板能經由感測元件因形變而產生的電流變化量來對多個方向(例如第一方向及第二方向)上的彎折進行感測的動作。
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。

Claims (14)

  1. 一種感測元件,包括:一主動層,配置於一基板上,其中該主動層包括一第一源極區、一第二源極區、一汲極區及一通道區;一第一源極,與該第一源極區電性連接;一第二源極,與該第二源極區電性連接;一汲極,與該汲極區電性連接;以及一閘極,與該通道區於該基板的一法線方向上重疊,其中該第一源極朝向該通道區以一第一方向延伸,該第二源極朝向該通道區以一第二方向延伸,該第一方向及該第二方向與該法線方向相交,且該第一方向與該第二方向之間具有一夾角,該夾角不等於180度,且其中該第一源極與該第二源極彼此不連接。
  2. 如申請專利範圍第1項所述的感測元件,其中該夾角等於90度。
  3. 如申請專利範圍第1項所述的感測元件,其中該主動層的輪廓為T字形。
  4. 如申請專利範圍第1項所述的感測元件,其中該主動層的輪廓為Y字形,該夾角為60度至120度。
  5. 如申請專利範圍第1項所述的感測元件,其中該第一源極經由一第一接觸窗與該第一源極區電性連接,該第二源極經由一第二接觸窗與該第二源極區電性連接,且該汲極經由一第三接觸窗與該汲極區電性連接,其中該夾角不等於90度。
  6. 一種感測顯示面板,包括至少一畫素單元,該畫素單元包括:一第一掃描線、一資料線、一第一感測線以及一第二感測線,配置在一基板上;一開關元件,電性連接於該第一掃描線與該資料線;一驅動元件,電性連接於該開關元件;以及一感測元件,電性連接於該驅動元件、該第一感測線與該第二感測線,且該感測元件包括:一主動層,配置於一基板上,其中該主動層包括一第一源極區、一第二源極區、一汲極區及一通道區;一第一源極,與該第一源極區電性連接;一第二源極,與該第二源極區電性連接;一汲極,與該汲極區電性連接;以及一閘極,與該通道區於該基板的一法線方向上重疊,其中該第一源極朝向該通道區以一第一方向延伸,該第二源極朝向該通道區以一第二方向延伸,該第一方向及該第二方向與該法線方向相交,且該第一方向與該第二方向之間具有一夾角,該夾角不等於180度,且其中該第一源極與該第二源極彼此不連接。
  7. 如申請專利範圍第6項所述的感測顯示面板,其中該夾角等於90度。
  8. 如申請專利範圍第6項所述的感測顯示面板,其中該主動層的輪廓為T字形。
  9. 如申請專利範圍第6項所述的感測顯示面板,其中該主動層的輪廓為Y字形。
  10. 如申請專利範圍第6項所述的感測顯示面板,其中該第一源極電性連接於該第一感測線,該第二源極電性連接於該第二感測線,且該汲極電性連接於該驅動元件。
  11. 如申請專利範圍第6項所述的感測顯示面板,其中該閘極電性連接於該第一掃描線。
  12. 如申請專利範圍第6項所述的感測顯示面板,更包括一第二掃描線,其中該閘極電性連接於該第二掃描線。
  13. 如申請專利範圍第12項所述的感測顯示面板,其中該第一源極電性連接於該第一感測線,該第二源極電性連接於該第二感測線,且該汲極電性連接於該驅動元件。
  14. 如申請專利範圍第6項所述的感測顯示面板,更包括:一電容器,電性連接於該開關元件與該驅動元件;以及一發光元件,電性連接於該驅動元件;其中該夾角不等於90度。
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