TWI641729B - Copper-tin alloy plating bath - Google Patents

Copper-tin alloy plating bath Download PDF

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TWI641729B
TWI641729B TW104125247A TW104125247A TWI641729B TW I641729 B TWI641729 B TW I641729B TW 104125247 A TW104125247 A TW 104125247A TW 104125247 A TW104125247 A TW 104125247A TW I641729 B TWI641729 B TW I641729B
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copper
compound
tin alloy
alloy plating
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TW201612362A (en
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辻本貴光
長尾敏光
�原健二
片山順一
大塚邦顯
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日商奧野製藥工業股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/58Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/02Alloys based on copper with tin as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/60Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)

Abstract

本發明的課題在於提供一種銅-錫合金鍍敷浴,其就算不使用氰離子也能產生厚膜化,並且也可應付滾鍍。本發明係關於一種銅-錫合金鍍敷浴,是由含有水溶性銅化合物、水溶性2價錫化合物、通式(1)所示之含硫化合物、及具有羥基之芳香族化合物的水溶液所構成;R-(CH2)l-S-(CH2)m-S-(CH2)n-R (1)(式中,R為H、OH或SO3Na;l、m及n各自獨立且為0~3之整數)。 An object of the present invention is to provide a copper-tin alloy plating bath which can be thickened even without using cyanide ions, and can also cope with barrel plating. The present invention relates to a copper-tin alloy plating bath which is composed of an aqueous solution containing a water-soluble copper compound, a water-soluble divalent tin compound, a sulfur-containing compound represented by the formula (1), and an aromatic compound having a hydroxyl group. Composition; R-(CH 2 ) l -S-(CH 2 ) m -S-(CH 2 ) n -R (1) (wherein R is H, OH or SO 3 Na; each of l, m and n Independent and an integer from 0 to 3).

Description

銅-錫合金鍍敷浴 Copper-tin alloy plating bath 技術領域 Technical field

本發明是關於一種銅-錫合金鍍敷浴。 This invention relates to a copper-tin alloy plating bath.

背景技術 Background technique

在電鍍領域中,從前以來就廣泛地使用鍍鎳。然而,以鍍鎳來說,往往被指出會有鎳過敏的問題,其係因鍍敷皮膜內所含之金屬元素(鎳)而導致皮膚起疹子或發炎,故需要尋求能取代此之替代技術。 In the field of electroplating, nickel plating has been widely used since the past. However, in the case of nickel plating, it is often pointed out that there is a problem of nickel allergy, which is caused by a metal element (nickel) contained in the plating film, which causes rash or inflammation of the skin, so it is necessary to seek an alternative technology that can replace this. .

另一方面,銅-錫合金作為具有與鎳相同程度之白色外觀及皮膜特性的合金,乃眾所周知。於是,作為鍍鎳的替代方案,鍍銅-錫合金備受矚目。 On the other hand, a copper-tin alloy is known as an alloy having the same white appearance and film properties as nickel. Thus, as an alternative to nickel plating, copper-tin alloys have attracted attention.

過去,在施行鍍銅-錫合金之鍍敷浴中,係使用含有氰離子的鍍敷浴(氰浴),然而從作業環境及排水處理管制之立場來看會有問題。近年來,作為不混合氰離子(下稱「無氰」)之銅-錫合金浴,所提出的方案有焦磷酸浴(例如,專利文獻1~3)、酸性浴(例如,專利文獻4~5)等。惟,相較於氰浴,焦磷酸浴所形成之鍍敷皮膜的內部應力為高,鍍敷時會產生裂縫,致使鍍敷皮膜難以產生厚膜化。另外,酸性浴由於不調整銅及錫的析出電位,在電流 密度變動大之滾鍍的情況下,有著銅會優先析出而使合金組成嚴重失準之問題。 In the past, in a plating bath for performing copper-tin alloy plating, a plating bath containing cyanide ions (cyanide bath) was used, but there was a problem from the standpoint of the working environment and the drainage treatment control. In recent years, as a copper-tin alloy bath which does not mix cyanide ions (hereinafter referred to as "cyanogen-free"), there are proposed pyrophosphoric acid baths (for example, Patent Documents 1 to 3) and acidic baths (for example, Patent Document 4~) 5) Wait. However, compared with the cyanide bath, the internal stress of the plating film formed by the pyrophosphoric acid bath is high, and cracks are generated during plating, so that it is difficult to form a thick film on the plating film. In addition, the acid bath does not adjust the precipitation potential of copper and tin at the current In the case of barrel plating having a large density variation, there is a problem that copper is preferentially precipitated and the alloy composition is seriously misaligned.

因為以上的情事,期望能有一種鍍敷浴,其係與氰浴同樣能使鍍敷皮膜產生厚膜化,並且也可應付滾鍍。 Because of the above, it is desirable to have a plating bath which, like the cyanide bath, can thicken the plating film and also cope with barrel plating.

先前技術文獻 Prior technical literature 專利文獻 Patent literature

專利文獻1:日本專利特開平10-102278號公報 Patent Document 1: Japanese Patent Laid-Open No. Hei 10-102278

專利文獻2:日本專利特開2001-295092號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2001-295092

專利文獻3:日本專利特開2004-035980號公報 Patent Document 3: Japanese Patent Laid-Open Publication No. 2004-035980

專利文獻4:日本專利特開2009-161804號公報 Patent Document 4: Japanese Patent Laid-Open Publication No. 2009-161804

專利文獻5:日本專利特開2010-189753號公報 Patent Document 5: Japanese Patent Laid-Open Publication No. 2010-189753

本發明即是有鑒於上述習知技術的問題點所完成者,其主要目的在於提供一種就算不使用氰離子也能產生厚膜化且也可應付滾鍍的銅-錫合金鍍敷浴。 SUMMARY OF THE INVENTION The present invention has been made in view of the above problems of the prior art, and its main object is to provide a copper-tin alloy plating bath which can be thickened without using cyanide ions and which can cope with barrel plating.

本案發明人等,為了達成上述之目的而專心致志反覆進行了研究。其結果發現,藉由使用特定的含硫化合物及具有羥基之芳香族化合物,所獲得銅-錫合金鍍敷浴就算不使用氰離子也能產生厚膜化,並且也可應付滾鍍。本發明即是根據此見解,更進一步反覆檢討的結果所完成者。 The inventors of the present case and others have devoted themselves to research in order to achieve the above objectives. As a result, it has been found that by using a specific sulfur-containing compound and an aromatic compound having a hydroxyl group, the obtained copper-tin alloy plating bath can be thickened without using cyanide ions, and can also cope with barrel plating. The present invention is based on this finding and is further completed by the results of the repeated review.

亦即,本發明係提供下述銅-錫合金鍍敷浴等。 That is, the present invention provides the following copper-tin alloy plating bath and the like.

第1項. 銅-錫合金鍍敷浴,是由含有水溶性銅化合物、水溶性2價錫化合物、通式(1)所示之含硫化合物及具有羥基之芳香族化合物的水溶液所構成;R-(CH2)l-S-(CH2)m-S-(CH2)n-R (1) Item 1. The copper-tin alloy plating bath is composed of an aqueous solution containing a water-soluble copper compound, a water-soluble divalent tin compound, a sulfur-containing compound represented by the formula (1), and an aromatic compound having a hydroxyl group; R-(CH 2 ) l -S-(CH 2 ) m -S-(CH 2 ) n -R (1)

(式中,R為H、OH或SO3Na;l、m及n各自獨立且為0~3之整數)。 (wherein R is H, OH or SO 3 Na; and l, m and n are each independently and are an integer of 0 to 3).

第2項. 如上述第1項所記載的銅-錫合金鍍敷浴,其含有:換算成銅離子為1~60g/L之前述水溶性銅化合物、換算成2價錫離子為5~40g/L之前述水溶性2價錫化合物、5~500g/L之前述含硫化合物及1~50g/L之前述具有羥基之芳香族化合物。 The copper-tin alloy plating bath according to the above item 1, which contains the water-soluble copper compound in an amount of 1 to 60 g/L in terms of copper ions, and 5 to 40 g in terms of divalent tin ions. /L of the water-soluble divalent tin compound, 5 to 500 g/L of the sulfur-containing compound, and 1 to 50 g/L of the aromatic compound having a hydroxyl group.

第3項. 如上述第1或2項所記載的銅-錫合金鍍敷浴,其中前述含硫化合物係選自於由甲二硫醇、1,2-乙二硫醇、1,3-丙二硫醇、3,6-二噻-1,8-辛二醇及3,3’-二硫雙(1-丙磺酸鈉)所構成群組中之至少一種。 The copper-tin alloy plating bath according to the above item 1, wherein the sulfur-containing compound is selected from the group consisting of methyldithiol, 1,2-ethanedithiol, and 1,3-. At least one of the group consisting of propylene dithiol, 3,6-dithia-1,8-octanediol, and 3,3'-dithiobis(sodium 1-propanesulfonate).

第4項. 如上述第1至3項中任一項所記載的銅-錫合金鍍敷浴,其中前述具有羥基之芳香族化合物係選自於由酚、兒茶酚、對苯二酚、間苯二酚、鄰苯三酚、對甲酚磺酸、抗壞血酸鈉及異抗壞血酸鈉所構成群組中之至少一種。 The copper-tin alloy plating bath according to any one of the items 1 to 3, wherein the aromatic compound having a hydroxyl group is selected from the group consisting of phenol, catechol, and hydroquinone. At least one of the group consisting of resorcinol, pyrogallol, p-cresolsulfonic acid, sodium ascorbate, and sodium erythorbate.

第5項. 如上述第1至4項中任一項所記載的銅-錫合金鍍敷浴,其中前述水溶液更含有:非離子系界面活性劑;及,芳香族酮或芳香族醛。 The copper-tin alloy plating bath according to any one of the items 1 to 4, wherein the aqueous solution further contains: a nonionic surfactant; and an aromatic ketone or an aromatic aldehyde.

第6項. 一種銅-錫合金鍍敷方法,係在如上述第1至5項中任一項所記載的銅-錫合金鍍敷浴中,將被鍍物作為陰極進行電解。 Item 6. A copper-tin alloy plating method, wherein the object to be plated is used as a cathode for electrolysis in the copper-tin alloy plating bath according to any one of the above items 1 to 5.

第7項. 一種利用如上述第6項所記載的銅-錫合金鍍敷方法而形成有銅-錫合金鍍敷皮膜之物品。 Item 7. An article in which a copper-tin alloy plating film is formed by the copper-tin alloy plating method according to the above item 6.

本發明的銅-錫合金鍍敷浴,藉由一併使用特定的含硫化合物與特定的具有羥基之芳香族化合物,能得到含任意比例之銅與錫的合金。再者,本發明的銅-錫合金鍍敷浴,藉由將特定的含硫化合物作為錯合劑使用,比起習知的焦磷酸浴來說較不易產生裂縫,就算不使用氰浴也能讓皮膜產生厚膜化。更甚者,本發明的銅-錫合金鍍敷浴與習知的酸性浴相比,電流密度對合金比率的影響較小,故也可應付電流密度變動大的滾鍍。另外,於前述銅-錫合金鍍敷浴中,更添加非離子系界面活性劑以及芳香族酮或芳香族醛,藉此能製得具有優異光澤外觀的鍍敷皮膜。 In the copper-tin alloy plating bath of the present invention, an alloy containing copper and tin in an arbitrary ratio can be obtained by using a specific sulfur-containing compound together with a specific aromatic compound having a hydroxyl group. Further, the copper-tin alloy plating bath of the present invention is less likely to cause cracks than a conventional pyrophosphoric acid bath by using a specific sulfur-containing compound as a binder, even if a cyanide bath is not used. The film is thickened. Further, the copper-tin alloy plating bath of the present invention has a smaller influence on the alloy ratio than the conventional acid bath, and therefore can cope with barrel plating having a large variation in current density. Further, in the copper-tin alloy plating bath, a nonionic surfactant and an aromatic ketone or an aromatic aldehyde are further added, whereby a plating film having an excellent gloss appearance can be obtained.

圖1所示者是銅-錫合金鍍敷浴的電流密度與鍍敷皮膜的含銅率之關係。 Figure 1 shows the relationship between the current density of the copper-tin alloy plating bath and the copper content of the plating film.

用以實施發明之形態 Form for implementing the invention

以下,具體說明有關本發明之銅-錫合金鍍敷浴。 Hereinafter, the copper-tin alloy plating bath according to the present invention will be specifically described.

本發明銅-錫合金鍍敷浴,是由含有下述化合物的水溶液所構成:作為金屬源之水溶性銅化合物與水溶性2價錫化合物、作為錯合劑且以通式(1)所示之含硫化合物、及具有羥基之芳香族化合物;R-(CH2)l-S-(CH2)m-S-(CH2)n-R (1)(式中,R為H、OH或SO3Na;l、m及n各自獨立且為0~3之整數)。 The copper-tin alloy plating bath of the present invention is composed of an aqueous solution containing a water-soluble copper compound as a metal source and a water-soluble divalent tin compound as a crosslinking agent and represented by the formula (1). a sulfur-containing compound, and an aromatic compound having a hydroxyl group; R-(CH 2 ) l -S-(CH 2 ) m -S-(CH 2 ) n -R (1) (wherein R is H, OH or SO 3 Na; l, m and n are each independently and are an integer of 0 to 3).

身為銅離子源的水溶性銅化合物,只要是含有作為銅成分的2價銅之水溶性化合物皆能使用,並不須特別限定。水溶性銅化合物的具體例,可舉例如:氯化銅(II)、硫酸銅(II)、硝酸銅(II)、碳酸銅(II)、氧化銅(II)、醋酸銅(II)、甲烷磺酸銅(II)、胺基磺酸銅(II)、氟化銅(II)、2-羥基乙烷磺酸銅(II)、2-羥基丙烷磺酸銅(II)、焦磷酸銅(II)等。該等銅化合物之中,宜為硫酸銅(II)。該等水溶性銅化合物,通常可單獨1種使用或混合2種以上來使用。水溶性銅化合物的濃度,例如,作為銅離子濃度而為1~60g/L左右,宜為10~40g/L左右。 The water-soluble copper compound which is a copper ion source can be used as long as it is a water-soluble compound containing divalent copper as a copper component, and is not particularly limited. Specific examples of the water-soluble copper compound include copper (II) chloride, copper (II) sulfate, copper (II) nitrate, copper (II) carbonate, copper (II) oxide, copper (II) acetate, and methane. Copper (II) sulfonate, copper (II) amine sulfonate, copper (II) fluoride, copper (II) 2-hydroxyethanesulfonate, copper (II) 2-hydroxypropane sulfonate, copper pyrophosphate ( II) and so on. Among these copper compounds, copper (II) sulfate is preferred. These water-soluble copper compounds can be used alone or in combination of two or more. The concentration of the water-soluble copper compound is, for example, about 1 to 60 g/L as the copper ion concentration, and preferably about 10 to 40 g/L.

身為錫離子源的水溶性2價錫化合物,只要是含有作為錫成分的2價錫的水溶性化合物皆能使用,並不須特別限定。水溶性2價錫化合物的具體例,可舉例如:氯化亞錫、硫酸亞錫、醋酸亞錫、焦磷酸亞錫、甲烷磺酸錫、胺基磺酸亞錫、葡萄糖酸亞錫、酒石酸亞錫、氧化亞錫、氟硼化亞錫、2-羥基乙烷磺酸錫、2-羥基丙烷磺酸錫等。該等錫化合物之中,宜為硫酸亞錫。該等水溶性2價 錫化合物,通常可單獨1種使用或混合2種以上來使用。水溶性2價錫化合物的濃度,例如,作為2價錫離子濃度而為5~40g/L左右,宜為5~25g/L左右。 The water-soluble divalent tin compound which is a source of tin ions can be used as long as it is a water-soluble compound containing divalent tin as a tin component, and is not particularly limited. Specific examples of the water-soluble divalent tin compound include, for example, stannous chloride, stannous sulfate, stannous acetate, stannous pyrophosphate, tin methanesulfonate, stannous amine sulfonate, stannous gluconate, and tartaric acid. Stannous, stannous oxide, stannous fluoroborate, tin 2-hydroxyethane sulfonate, tin 2-hydroxypropane sulfonate, and the like. Among these tin compounds, stannous sulfate is preferred. The water soluble 2 price The tin compound can be used alone or in combination of two or more. The concentration of the water-soluble divalent tin compound is, for example, about 5 to 40 g/L as the divalent tin ion concentration, and preferably about 5 to 25 g/L.

水溶性銅化合物及水溶性2價錫化合物的調配比例,銅:錫(金屬部分的莫耳比)宜設為1:0.1~0.6。銅:錫(金屬部分的莫耳比)特別適宜設為1:0.1~0.3。 The ratio of the water-soluble copper compound and the water-soluble divalent tin compound, copper: tin (mole ratio of the metal portion) should be set to 1:0.1 to 0.6. Copper: Tin (the molar ratio of the metal portion) is particularly preferably set to 1:0.1 to 0.3.

在本發明中,使用作為錯合劑且以通式(1)所示之含硫化合物乃一大特徵;R-(CH2)l-S-(CH2)m-S-(CH2)n-R (1) In the present invention, the use of the sulfur-containing compound represented by the formula (1) as a crosslinking agent is a major feature; R-(CH 2 ) l -S-(CH 2 ) m -S-(CH 2 ) n -R (1)

(式中,R為H、OH或SO3Na;l、m及n各自獨立且為0~3之整數)。通式(1)所示之含硫化合物,具體可舉例如:甲二硫醇、1,2-乙二硫醇、1,3-丙二硫醇、3,6-二噻-1,8-辛二醇、3,3’-二硫雙(1-丙烷磺酸鈉)等。該等化合物之中,從作業環境的觀點來看,以臭氣為少之3,6-二噻-1,8-辛二醇、3,3’-二硫雙(1-丙烷磺酸鈉)等為佳,並以3,6-二噻-1,8-辛二醇為較佳。該等含硫化合物,通常可單獨1種使用或混合2種以上來使用。錯合劑的濃度為例如5~500g/L左右,宜為80~320g/L左右。 (wherein R is H, OH or SO 3 Na; and l, m and n are each independently and are an integer of 0 to 3). Specific examples of the sulfur-containing compound represented by the formula (1) include methyldithiol, 1,2-ethanedithiol, 1,3-propanedithiol, and 3,6-dithia-1,8. - Octanediol, 3,3'-dithiobis(sodium 1-propanesulfonate), and the like. Among these compounds, 3,6-dithia-1,8-octanediol and 3,3'-dithiobis(sodium 1-propanesulfonate) are less odorous from the viewpoint of the working environment. And so on, and 3,6-dithia-1,8-octanediol is preferred. These sulfur-containing compounds may be used alone or in combination of two or more. The concentration of the complexing agent is, for example, about 5 to 500 g/L, preferably about 80 to 320 g/L.

在本發明中,係使用具有羥基之芳香族化合物。具有羥基之芳香族化合物,可舉例如:於苯環或呋喃環上經一個以上的羥基取代之化合物,從作業環境及液體安定性(liquid stability)的觀點來看,以具有苯環之化合物為佳。具有羥基之芳香族化合物,具體可舉例如:酚、兒茶酚、對苯二酚、間苯二酚、鄰苯三酚、對甲酚磺酸、抗 壞血酸、異抗壞血酸、及其等之鹼金屬鹽等。鹼金屬可舉例如:鈉、鉀等。具有羥基之芳香族化合物宜為:酚、兒茶酚、對苯二酚、間苯二酚、鄰苯三酚、對甲酚磺酸、抗壞血酸鈉、及異抗壞血酸鈉。上述具有羥基之芳香族化合物,有著將2價銅離子(Cu2+)還原成1價銅離子(Cu1+)之作用,並被認為能輔助銅離子與上述錯合劑形成錯合物。該等具有羥基之芳香族化合物,通常可單獨1種使用或混合2種以上來使用。具有羥基之芳香族化合物之濃度為例如1~50g/L左右,宜為5~30g/L左右。 In the present invention, an aromatic compound having a hydroxyl group is used. The aromatic compound having a hydroxyl group may, for example, be a compound substituted with one or more hydroxyl groups on a benzene ring or a furan ring, and a compound having a benzene ring is used from the viewpoint of work environment and liquid stability. good. Specific examples of the aromatic compound having a hydroxyl group include phenol, catechol, hydroquinone, resorcin, pyrogallol, p-cresolsulfonic acid, ascorbic acid, isoascorbic acid, and the like. Salt and so on. The alkali metal may, for example, be sodium, potassium or the like. The aromatic compound having a hydroxyl group is preferably: phenol, catechol, hydroquinone, resorcin, pyrogallol, p-cresolsulfonic acid, sodium ascorbate, and sodium erythorbate. The aromatic compound having a hydroxyl group has a function of reducing a divalent copper ion (Cu 2+ ) to a monovalent copper ion (Cu 1+ ), and is considered to assist the copper ion to form a complex with the above-mentioned complexing agent. These aromatic compounds having a hydroxyl group may be used alone or in combination of two or more. The concentration of the aromatic compound having a hydroxyl group is, for example, about 1 to 50 g/L, preferably about 5 to 30 g/L.

錯合劑及具有羥基之芳香族化合物的調配量,相對於銅1mol/L,錯合劑宜為2mol/L以上,具有羥基之芳香族化合物宜為1mol/L以上。 The amount of the complexing agent and the aromatic compound having a hydroxyl group is preferably 2 mol/L or more with respect to 1 mol/L of copper, and the aromatic compound having a hydroxyl group is preferably 1 mol/L or more.

用以構成銅-錫合金鍍敷浴之基底的酸,可廣泛使用已知的有機酸及無機酸。有機酸具體可舉例如:甲烷磺酸、乙烷磺酸、2-丙醇磺酸、2-磺基乙酸、2-磺基丙酸、3-磺基丙酸、磺基琥珀酸(sulfosuccinic acid)、磺基甲基琥珀酸、磺基延胡索酸、磺基馬來酸、2-磺基苯甲酸、3-磺基苯甲酸、4-磺基苯甲酸、5-磺柳酸、4-磺基鄰苯二甲酸、5-磺基間苯二甲酸、2-磺基對苯二甲酸、酚磺酸等。無機酸具體可舉例如:硫酸、鹽酸、胺基磺酸等。此等之中,宜為硫酸、甲烷磺酸、磺基琥珀酸。前述酸,通常可單獨1種使用或混合2種以上來使用。酸的濃度為10~400g/L左右,宜為150~200g/L左右。 As the acid constituting the substrate of the copper-tin alloy plating bath, known organic acids and inorganic acids can be widely used. Specific examples of the organic acid include methanesulfonic acid, ethanesulfonic acid, 2-propanolsulfonic acid, 2-sulfoacetic acid, 2-sulfopropionic acid, 3-sulfopropionic acid, and sulfosuccinic acid. ), sulfomethyl succinic acid, sulfo-fumarate, sulfo-maleic acid, 2-sulfobenzoic acid, 3-sulfobenzoic acid, 4-sulfobenzoic acid, 5-sulfuric acid, 4-sulfoyl Phthalic acid, 5-sulfoisophthalic acid, 2-sulfo terephthalic acid, phenolsulfonic acid, and the like. Specific examples of the inorganic acid include sulfuric acid, hydrochloric acid, and aminosulfonic acid. Among these, sulfuric acid, methanesulfonic acid, and sulfosuccinic acid are preferred. The above-mentioned acid can be used alone or in combination of two or more. The concentration of the acid is about 10 to 400 g/L, preferably about 150 to 200 g/L.

銅-錫合金鍍敷浴的pH範圍,通常為弱酸性~強 酸性之範圍,具體來說,將鍍敷浴液之pH調整至4.5以下。pH過高則會形成欠缺平滑性的鍍敷皮膜,因而不適宜。又,pH調整劑,可使用鹽酸、硫酸等各種的酸,氫氧化銨、氫氧化鈉、氫氧化鉀等各種的鹼。又,為了減少鍍敷浴pH的變動,可添加pH緩衝劑。pH緩衝劑可使用已知的緩衝劑。pH緩衝劑可舉例如:醋酸鈉或醋酸鉀;硼酸鈉、硼酸鉀或硼酸銨;甲酸鈉或甲酸鉀;酒石酸鈉或酒石酸鉀;磷酸二氫鈉、磷酸二氫鉀或磷酸二氫銨等。該等之pH調整劑及pH緩衝劑,通常可單獨1種使用或混合2種以上來使用。 The pH range of the copper-tin alloy plating bath is usually weakly acidic to strong The range of the acidity, specifically, the pH of the plating bath is adjusted to 4.5 or less. If the pH is too high, a plating film lacking smoothness is formed, which is not preferable. Further, as the pH adjuster, various acids such as hydrochloric acid and sulfuric acid, and various bases such as ammonium hydroxide, sodium hydroxide, and potassium hydroxide can be used. Further, in order to reduce the fluctuation of the pH of the plating bath, a pH buffer may be added. As the pH buffer, a known buffer can be used. The pH buffering agent may, for example, be sodium acetate or potassium acetate; sodium borate, potassium borate or ammonium borate; sodium formate or potassium formate; sodium tartrate or potassium tartrate; sodium dihydrogen phosphate, potassium dihydrogen phosphate or ammonium dihydrogen phosphate. These pH adjusters and pH buffers can be used alone or in combination of two or more.

上述鍍敷浴中,亦可因應需求而添加高分子化合物、界面活性劑、整平劑(leveler)等添加劑。 In the plating bath, an additive such as a polymer compound, a surfactant, or a leveler may be added as needed.

高分子化合物,可舉例如聚乙二醇等。 The polymer compound may, for example, be polyethylene glycol or the like.

界面活性劑,使用已知之非離子系界面活性劑、陽離子系界面活性劑、陰離子系界面活性劑,及兩性界面活性劑之任意者皆可。該等界面活性劑,可單獨1種使用或2種以上一併使用,並以含有至少1種非離子系界面活性劑為佳。 As the surfactant, any of a known nonionic surfactant, a cationic surfactant, an anionic surfactant, and an amphoteric surfactant may be used. These surfactants may be used alone or in combination of two or more, and it is preferred to contain at least one nonionic surfactant.

非離子系界面活性劑,可舉例如:聚氧伸烷基烷基醚、聚氧伸烷基苯基醚、聚氧伸烷基萘基醚、聚氧伸烷基烷基酯、聚氧伸烷基去水山梨醇脂肪酸酯、聚氧伸烷基山梨醇脂肪酸酯、聚乙二醇脂肪酸酯、聚氧伸烷基丙三醇脂肪酸酯、聚氧伸烷基烷基胺等。此等之中以聚氧伸烷基烷基胺為佳,並以聚氧乙烯烷基胺為較佳。陽離子系界 面活性劑,可舉例如:四-低級烷基鹵化銨、烷基三甲基鹵化銨、烷基胺鹽酸鹽、烷基胺油酸鹽、烷基胺基乙基甘氨酸等。陰離子系界面活性劑,可舉例如:烷基-β-萘磺酸、脂肪酸皂類界面活性劑、烷基磺酸鹽、烷基硫酸酯鹽、聚氧乙烯烷基酚醚硫酸酯酸鹽等。兩性界面活性劑,可舉例如:2-烷基-N-羧基甲基-N-羥乙基咪唑(imidazolinium)甜菜鹼、二甲基烷基甜菜鹼(dimethyl alkyl betaine)、磺基甜菜鹼(sulfobetaine)、N-烷基-β-胺丙酸(β-aminopropionic acid)等。 The nonionic surfactant may, for example, be a polyoxyalkylene alkyl ether, a polyoxyalkylene alkylphenyl ether, a polyoxyalkylene naphthyl ether, a polyoxyalkylene alkyl ester, or a polyoxyalkylene. Alkyl sorbitan fatty acid ester, polyoxyalkylene sorbitan fatty acid ester, polyethylene glycol fatty acid ester, polyoxyalkylene glycerol fatty acid ester, polyoxyalkylene alkylamine, etc. . Among these, a polyoxyalkylalkylamine is preferred, and a polyoxyethylene alkylamine is preferred. Cation system The surfactant may, for example, be a tetra-lower alkylammonium halide, an alkyltrimethylammonium halide, an alkylamine hydrochloride, an alkylamine oleate or an alkylaminoethylglycine. Examples of the anionic surfactant include alkyl-β-naphthalenesulfonic acid, fatty acid soap surfactant, alkylsulfonate, alkylsulfate, polyoxyethylene alkylphenol ether sulfate, and the like. . The amphoteric surfactant may, for example, be 2-alkyl-N-carboxymethyl-N-hydroxyethylimidazolium betaine, dimethyl alkyl betaine or sulfobetaine ( Sulfobetaine), N-alkyl-β-aminopropionic acid, and the like.

將高分子化合物或界面活性劑添加至鍍敷浴時,高分子化合物或界面活性劑之濃度可於0.01~100g/L左右之範圍進行使用,宜為0.1~40g/L左右。 When a polymer compound or a surfactant is added to the plating bath, the concentration of the polymer compound or the surfactant may be used in the range of about 0.01 to 100 g/L, preferably about 0.1 to 40 g/L.

整平劑,係用以提高平滑性及光澤性的添加劑。此種整平劑,可使用酮化合物或醛化合物。酮化合物,可廣泛使用已知的芳香族酮及脂肪族酮。芳香族酮,可舉例如:苯乙酮、二苯基酮、亞苄丙酮(benzalacetone)等;脂肪族酮,可舉例如:丙酮、二乙基酮等。醛化合物,可廣泛使用已知的芳香族醛及脂肪族醛。芳香族醛,可舉例如:肉桂醛、α-甲基肉桂醛、α-戊基肉桂醛、α-己基肉桂醛、枯茗醛(cuminaldehyde)、苯甲醛、茴香醛(Anisaldehyde)等;脂肪族醛,可舉例如:甲醛、乙醛、丙醛等。此等之中,以芳香族酮及芳香族醛為佳。該等整平劑,可單獨1種使用或混合2種以上來使用。 A leveling agent is an additive used to improve smoothness and gloss. As such a leveling agent, a ketone compound or an aldehyde compound can be used. As the ketone compound, known aromatic ketones and aliphatic ketones can be widely used. Examples of the aromatic ketone include acetophenone, diphenyl ketone, and benzalacetone; and the aliphatic ketone may, for example, be acetone or diethyl ketone. As the aldehyde compound, a known aromatic aldehyde and an aliphatic aldehyde can be widely used. Examples of the aromatic aldehyde include cinnamaldehyde, α-methylcinnamaldehyde, α-pentylcinnamaldehyde, α-hexylcinnamaldehyde, cuminaldehyde, benzaldehyde, anisaldehyde, and the like; The aldehyde may, for example, be formaldehyde, acetaldehyde or propionaldehyde. Among these, aromatic ketones and aromatic aldehydes are preferred. These leveling agents may be used alone or in combination of two or more.

將整平劑添加至鍍敷浴時,整平劑的濃度可於 0.01~30g/L左右之範圍進行使用,宜為0.01~10g/L左右。 When the leveling agent is added to the plating bath, the concentration of the leveling agent can be It should be used in the range of 0.01~30g/L, preferably about 0.01~10g/L.

宜一併使用界面活性劑與整平劑來作為添加劑。藉由一併使用界面活性劑與整平劑,可擴大用以獲得光澤鍍敷之電流密度範圍。藉此,能讓從該鍍敷浴所得之鍍敷皮膜更加平滑化與高光澤化。界面活性劑及整平劑的組合,以非離子系界面活性劑配合芳香族酮或芳香族醛之組合為佳。非離子系界面活性劑,宜為聚氧乙烯烷基胺。於上述鍍敷浴中,透過進一步添加非離子系界面活性劑與芳香族酮,或添加非離子系界面活性劑與芳香族醛,可獲得具優異光澤外觀之鍍敷皮膜。 It is advisable to use a surfactant and a leveling agent as an additive. By using a surfactant and a leveling agent together, the current density range for obtaining gloss plating can be expanded. Thereby, the plating film obtained from the plating bath can be made smoother and higher in gloss. The combination of the surfactant and the leveling agent is preferably a combination of a nonionic surfactant and an aromatic ketone or an aromatic aldehyde. The nonionic surfactant is preferably a polyoxyethylene alkylamine. In the plating bath, a non-ionic surfactant and an aromatic ketone are further added, or a nonionic surfactant and an aromatic aldehyde are added to obtain a plating film having an excellent gloss appearance.

一併使用界面活性劑與整平劑時,宜將界面活性劑的濃度設為0.1~40g/L左右,將整平劑的濃度設為0.01~10g/L左右,並且將界面活性劑:整平劑的比率設為1:1至100:1左右。 When using a surfactant and a leveling agent together, the concentration of the surfactant should be set to about 0.1 to 40 g/L, the concentration of the leveling agent should be set to about 0.01 to 10 g/L, and the surfactant: The ratio of the flat agent is set to be about 1:1 to 100:1.

可因應需求,適當選擇上述以外的添加劑,例如:應力減低劑、導電性輔助劑、消泡劑、光澤劑等,而添加於上述鍍敷浴中。 An additive other than the above may be appropriately selected depending on the demand, for example, a stress reducing agent, a conductive auxiliary agent, an antifoaming agent, a glossing agent, or the like, and added to the plating bath.

應力減低劑,可舉例如:萘酚磺酸(naphtholsulfonic acid)、糖精、1,5-萘二磺酸鈉等。該等應力減低劑,可單獨1種使用或混合2種以上來使用。導電性輔助劑,可舉例如:鹽酸、硫酸、醋酸、硝酸、胺基磺酸、焦磷酸、硼酸等酸,以及該等之銨鹽、鈉鹽、鉀鹽、有機胺鹽等。該等導電性輔助劑,可單獨1種使用或混合2種以上來使用。消泡劑及光澤劑,可適當選用鍍銅、鍍 錫、鍍銅-錫合金及一般鍍敷用之市售藥劑。 Examples of the stress reducing agent include naphtholsulfonic acid, saccharin, and sodium 1,5-naphthalene disulfonate. These stress reducing agents may be used alone or in combination of two or more. Examples of the conductive auxiliary agent include acids such as hydrochloric acid, sulfuric acid, acetic acid, nitric acid, aminosulfonic acid, pyrophosphoric acid, and boric acid, and such ammonium salts, sodium salts, potassium salts, and organic amine salts. These conductive auxiliary agents may be used alone or in combination of two or more. Defoamer and brightener, suitable for copper plating and plating Tin, copper-tin alloy and commercially available pharmaceuticals for general plating.

本發明的鍍敷浴的建浴方法並無特殊限定。例如,將水溶性銅化合物及水溶性2價錫化合物溶解於已溶解有硫酸等的酸之水溶液中,之後,混合錯合劑及還原劑,並因應需求混合其他的添加劑,最後調整至預定的pH,藉此即可獲得目標之鍍敷液。 The bathing method of the plating bath of the present invention is not particularly limited. For example, a water-soluble copper compound and a water-soluble divalent tin compound are dissolved in an aqueous solution in which an acid such as sulfuric acid or the like is dissolved, and then a mixed agent and a reducing agent are mixed, and other additives are mixed as needed, and finally adjusted to a predetermined pH. In order to obtain the target plating solution.

本發明的鍍敷浴,並非限定特定鍍敷方法者,可於已知的鍍敷方法中使用,亦能應付電流密度變動大的滾鍍。 The plating bath of the present invention is not limited to a specific plating method, and can be used in a known plating method, and can also cope with barrel plating having a large variation in current density.

關於鍍敷作業時的浴溫,浴溫為低時電鍍均厚能力(throwing power)雖提升但製膜速度會有下降的趨勢,相反地浴溫為高時,製膜速度雖提升但對於低電流密度範圍的電鍍均厚能力會有下降的趨勢,因此,可考量此點來決定出適切的浴溫。適宜的浴溫為,5~40℃左右之範圍。 Regarding the bath temperature during the plating operation, when the bath temperature is low, the plating power is increased, but the film forming speed is lowered. On the contrary, when the bath temperature is high, the film forming speed is increased but low. The ability to plate thickness in the current density range tends to decrease, so this can be taken into account to determine the appropriate bath temperature. A suitable bath temperature is in the range of about 5 to 40 °C.

關於陰極電流密度,亦可因應所使用的鍍敷液、被鍍物之種類等而作適宜決定,並以0.1~3A/dm2左右為佳。 The cathode current density can be appropriately determined depending on the plating solution to be used and the type of the object to be plated, and is preferably about 0.1 to 3 A/dm 2 .

陽極可使用作為銅-錫合金鍍敷用且已知可用的陽極,諸如:可溶性陽極(例如:錫陽極、含磷銅陽極、無氧銅陽極、銅-錫合金陽極等)、不溶性陽極(例如:不鏽鋼陽極、碳陽極、鉛陽極、鉛-錫合金陽極、鉛-銻合金陽極、鉑陽極、鈦陽極、鈦-鉑陽極、如銥氧化物被覆鈦電極這種的氧化物被覆陽極等)等。陰極係使用後述之被鍍物。因此,本發明的銅-錫合金鍍敷方法,可以說是一種 在上述銅-錫合金鍍敷浴中,以被鍍物作為陰極進行電解之方法。 The anode can be used as an anode for copper-tin alloy plating and is known to be usable, such as a soluble anode (eg, tin anode, phosphorus-containing copper anode, oxygen-free copper anode, copper-tin alloy anode, etc.), insoluble anode (eg : stainless steel anode, carbon anode, lead anode, lead-tin alloy anode, lead-bismuth alloy anode, platinum anode, titanium anode, titanium-platinum anode, oxide coated anode such as tantalum oxide coated titanium electrode, etc.) . The cathode is a material to be plated which will be described later. Therefore, the copper-tin alloy plating method of the present invention can be said to be a kind In the above copper-tin alloy plating bath, a method of performing electrolysis using the object to be plated as a cathode.

藉由上述鍍敷方法,於身為被鍍物之物品的表面形成上述銅-錫鍍敷皮膜。所得之皮膜的合金組成,以重量比計Cu:Sn為95:5至5:95,藉由讓鍍敷液中的Cu濃度或Sn濃度發生變化而能輕易改變合金組成。身為被鍍物之物品,其表面具有導電性,只要為平滑之物即可,所能使用之物並無特殊限定。可舉例如:家電製品、水龍頭、雜貨品、裝飾品、服飾品等的各種物品。 The copper-tin plating film is formed on the surface of the article to be coated by the above plating method. The alloy composition of the obtained film is 95:5 to 5:95 in terms of a weight ratio of Cu:Sn, and the alloy composition can be easily changed by changing the Cu concentration or the Sn concentration in the plating solution. As the object to be plated, the surface thereof is electrically conductive, and as long as it is a smooth object, the object to be used is not particularly limited. For example, various items such as home electric appliances, faucets, miscellaneous goods, decorations, and furnishings can be mentioned.

本發明的銅-錫合金鍍敷浴,能適合使用於服飾品或裝飾品用之鍍敷、電子或電力零件等之鍍敷,但對於其他用途之適用亦無任何限制。 The copper-tin alloy plating bath of the present invention can be suitably used for plating for plating, electronic or electric parts such as articles for clothing or decorations, but there is no limitation on the application to other uses.

[實施例] [Examples]

以下,列舉實施例與比較例,以對本發明作更詳細之說明。 Hereinafter, the examples and comparative examples will be given to explain the present invention in more detail.

使用下述表1~6中所示之各組成的鍍敷浴,並在以下的條件進行鍍敷處理,將鍍敷皮膜形成於被鍍物上。 The plating bath of each composition shown in the following Tables 1 to 6 was used, and plating treatment was performed under the following conditions to form a plating film on the object to be plated.

被鍍物:鐵板(5cm×5cm) Plated: iron plate (5cm × 5cm)

鍍敷方法:陽極 純錫板(10cm×5cm 2個) Plating method: anode pure tin plate (10cm × 5cm 2)

液量 1.5L(14cm×8cm×18cm使用塑料容器) Liquid volume 1.5L (14cm × 8cm × 18cm using plastic container)

攪拌 藉陰極搖臂(cathode rocker)所致之搖動 Stirring by the cathode rocker

鍍敷條件:溫度 18~20℃ Plating conditions: temperature 18~20°C

電流密度 1A/dm2 Current density 1A/dm 2

電解時間 25分鐘 Electrolysis time 25 minutes

將鍍敷液之狀態及透過以上之方式所形成之鍍敷皮膜的特性列示於表1~6。各個特性的評價方法,係如以下所述。 The characteristics of the plating solution and the characteristics of the plating film formed by the above method are shown in Tables 1 to 6. The evaluation method of each characteristic is as follows.

液之狀態:以目視確認 Liquid status: visual confirmation

液之安定性:以目視確認放置24小時後之鍍敷液 Stability of the liquid: visually confirm the plating solution after 24 hours of standing

鍍敷外觀及裂縫之發生:於數位電子顯微鏡進行觀察 Plating appearance and crack occurrence: observation by digital electron microscope

Cu:Sn比:於X射線螢光測厚儀進行評價 Cu:Sn ratio: evaluation by X-ray fluorescence thickness gauge

另外,關於實施例3、比較例11及12的鍍敷浴,係將電流密度設為0.01、0.1、0.5、1、2及3A/dm2而進行鍍敷處理,並求出所形成之鍍敷皮膜的含銅率。其結果如圖1所示。 Further, in the plating baths of Example 3 and Comparative Examples 11 and 12, plating treatment was performed by setting current densities to 0.01, 0.1, 0.5, 1, 2 , and 3 A/dm 2 , and plating was formed. The copper content of the coating. The result is shown in Figure 1.

從表1~5之結果可知,實施例1~50的鍍敷浴並未發生沉澱,特別是實施例1~5、10~31、34~42及45~50的鍍敷浴其液之狀態為安定,能透過實行鍍敷而獲得無裂縫的鍍敷皮膜。從表1之實施例1~5之結果可知,藉由調整鍍敷液中的金屬濃度,能獲得任意比率之銅-錫合金鍍敷。從表3~5之結果可知,藉由添加界面活性劑或整平劑於鍍敷液中能提升鍍敷外觀之光澤,兩者皆添加時能獲得具優異光澤之鍍敷外觀。另外,從圖1可知,比起以往的酸性浴(比較例12),本發明的鍍敷浴其電流密度對於合金比率的影響較少。 From the results of Tables 1 to 5, it was found that the plating baths of Examples 1 to 50 did not precipitate, particularly the plating baths of Examples 1 to 5, 10 to 31, 34 to 42 and 45 to 50. For stability, a crack-free plating film can be obtained by performing plating. From the results of Examples 1 to 5 of Table 1, it was found that copper-tin alloy plating of an arbitrary ratio can be obtained by adjusting the metal concentration in the plating solution. As can be seen from the results of Tables 3 to 5, the addition of a surfactant or a leveling agent can enhance the gloss of the plating appearance in the plating solution, and both of them can obtain a plating appearance with excellent gloss when added. Further, as is clear from Fig. 1, the current density of the plating bath of the present invention has less influence on the alloy ratio than the conventional acid bath (Comparative Example 12).

Claims (5)

一種銅-錫合金鍍敷浴,是由含有水溶性銅化合物、水溶性2價錫化合物、通式(1)所示之含硫化合物、具有羥基之芳香族化合物、界面活性劑及整平劑的水溶液所構成;R-(CH2)l-S-(CH2)m-S-(CH2)n-R (1)(式中,R為H、OH或SO3Na;l、m及n各自獨立且為0~3之整數);前述界面活性劑係選自於由聚氧乙烯烷基胺、聚氧伸烷基苯基醚,及聚氧伸烷基萘基醚所構成群組中之至少一種非離子系界面活性劑;前述整平劑係選自於由亞苄丙酮、肉桂醛、α-甲基肉桂醛、α-己基肉桂醛、α-戊基肉桂醛、枯茗醛、苯甲醛及茴香醛所構成群組中之至少一種芳香族酮或芳香族醛;且含有:換算成銅離子為1~60g/L之前述水溶性銅化合物、換算成2價錫離子為5~40g/L之前述水溶性2價錫化合物、5~500g/L之前述含硫化合物、1~50g/L之前述具有羥基之芳香族化合物、0.1~40g/L之前述界面活性劑,及0.01~10g/L之前述整平劑;並且前述界面活性劑:前述整平劑的比率為1:1至100:1。 A copper-tin alloy plating bath comprising a water-soluble copper compound, a water-soluble divalent tin compound, a sulfur-containing compound represented by the formula (1), an aromatic compound having a hydroxyl group, a surfactant, and a leveling agent Composition of an aqueous solution; R-(CH 2 ) l -S-(CH 2 ) m -S-(CH 2 ) n -R (1) (wherein R is H, OH or SO 3 Na; l, m And n are each independently and an integer of 0 to 3); the surfactant is selected from the group consisting of polyoxyethylene alkylamine, polyoxyalkylene alkylphenyl ether, and polyoxyalkylene naphthyl ether At least one nonionic surfactant in the group; the leveling agent is selected from the group consisting of benzylideneacetone, cinnamaldehyde, α-methylcinnamaldehyde, α-hexylcinnamaldehyde, α-amylcinnamaldehyde, and cumin At least one aromatic ketone or aromatic aldehyde in the group consisting of aldehyde, benzaldehyde and anisaldehyde; and containing the water-soluble copper compound in an amount of from 1 to 60 g/L in terms of copper ion, and converted into a divalent tin ion 5 to 40 g/L of the water-soluble divalent tin compound, 5 to 500 g/L of the sulfur-containing compound, 1 to 50 g/L of the aromatic compound having a hydroxyl group, and 0.1 to 40 g/L of the surfactant, And 0 .01~10g/L of the above leveling agent; and the aforementioned surfactant: the ratio of the aforementioned leveling agent is 1:1 to 100:1. 如請求項1之銅-錫合金鍍敷浴,其中前述含硫化合物係選自於由甲二硫醇、1,2-乙二硫醇、1,3-丙二硫醇、3,6- 二噻-1,8-辛二醇及3,3’-二硫雙(1-丙磺酸鈉)所構成群組中之至少一種。 The copper-tin alloy plating bath of claim 1, wherein the sulfur-containing compound is selected from the group consisting of methyldithiol, 1,2-ethanedithiol, 1,3-propanedithiol, 3,6- At least one of the group consisting of dithia-1,8-octanediol and 3,3'-dithiobis(sodium 1-propanesulfonate). 如請求項1或2之銅-錫合金鍍敷浴,其中前述具有羥基之芳香族化合物係選自於由酚、兒茶酚、對苯二酚、間苯二酚、鄰苯三酚、對甲酚磺酸、抗壞血酸鈉及異抗壞血酸鈉所構成群組中之至少一種。 The copper-tin alloy plating bath according to claim 1 or 2, wherein the aromatic compound having a hydroxyl group is selected from the group consisting of phenol, catechol, hydroquinone, resorcinol, pyrogallol, and At least one of the group consisting of cresylic acid, sodium ascorbate and sodium erythorbate. 一種銅-錫合金鍍敷方法,係在如請求項1至3中任一項之銅-錫合金鍍敷浴中,將被鍍物作為陰極進行電解。 A copper-tin alloy plating method for electrolysis of a substrate to be plated as a cathode in a copper-tin alloy plating bath according to any one of claims 1 to 3. 一種利用如請求項4之銅-錫合金鍍敷方法而形成有銅-錫合金鍍敷皮膜之物品。 An article in which a copper-tin alloy plating film is formed by a copper-tin alloy plating method as claimed in claim 4.
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