TWI640837B - 使用光學投影之基板調整系統及方法 - Google Patents
使用光學投影之基板調整系統及方法 Download PDFInfo
- Publication number
- TWI640837B TWI640837B TW105140977A TW105140977A TWI640837B TW I640837 B TWI640837 B TW I640837B TW 105140977 A TW105140977 A TW 105140977A TW 105140977 A TW105140977 A TW 105140977A TW I640837 B TWI640837 B TW I640837B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- processing
- image
- project
- light
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 257
- 238000000034 method Methods 0.000 title claims abstract description 43
- 230000003287 optical effect Effects 0.000 title description 5
- 238000012545 processing Methods 0.000 claims abstract description 80
- 230000008569 process Effects 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000001459 lithography Methods 0.000 abstract description 6
- 238000000059 patterning Methods 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 239000003504 photosensitizing agent Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 239000002585 base Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229920001400 block copolymer Polymers 0.000 description 4
- 238000002408 directed self-assembly Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005459 micromachining Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011324 bead Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241001147444 Giardia lamblia virus Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/974,974 | 2015-12-18 | ||
| US14/974,974 US9645391B2 (en) | 2013-11-27 | 2015-12-18 | Substrate tuning system and method using optical projection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201730688A TW201730688A (zh) | 2017-09-01 |
| TWI640837B true TWI640837B (zh) | 2018-11-11 |
Family
ID=59080724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105140977A TWI640837B (zh) | 2015-12-18 | 2016-12-12 | 使用光學投影之基板調整系統及方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2017111446A (enrdf_load_stackoverflow) |
| KR (1) | KR102544422B1 (enrdf_load_stackoverflow) |
| CN (1) | CN106896646B (enrdf_load_stackoverflow) |
| TW (1) | TWI640837B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI816764B (zh) * | 2018-03-19 | 2023-10-01 | 日商東京威力科創股份有限公司 | 使用校準修整用劑之臨界尺寸校正方法 |
| CN110187607B (zh) * | 2019-05-08 | 2024-11-19 | 源卓微纳科技(苏州)股份有限公司 | 一种直写光刻机构及其曝光方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6248168B1 (en) * | 1997-12-15 | 2001-06-19 | Tokyo Electron Limited | Spin coating apparatus including aging unit and solvent replacement unit |
| US20130057552A1 (en) * | 2011-09-07 | 2013-03-07 | Takao YOSHIWA | Drawing apparatus and drawing method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6949203B2 (en) * | 1999-12-28 | 2005-09-27 | Applied Materials, Inc. | System level in-situ integrated dielectric etch process particularly useful for copper dual damascene |
| JP2002072491A (ja) * | 2000-09-01 | 2002-03-12 | Airex Inc | プリント基板製造装置 |
| JP2005189714A (ja) * | 2003-12-26 | 2005-07-14 | Fuji Photo Film Co Ltd | 露光装置 |
| US6960775B1 (en) * | 2004-04-13 | 2005-11-01 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
| US7259829B2 (en) * | 2004-07-26 | 2007-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2006201692A (ja) * | 2005-01-24 | 2006-08-03 | Sony Corp | 立体パターン形成装置及び立体パターンの形成方法 |
| US7534627B2 (en) * | 2006-08-07 | 2009-05-19 | Sokudo Co., Ltd. | Methods and systems for controlling critical dimensions in track lithography tools |
| JP2008250140A (ja) * | 2007-03-30 | 2008-10-16 | Fujifilm Corp | 露光装置における露光方法及び露光装置 |
| US9735067B2 (en) * | 2013-11-27 | 2017-08-15 | Tokyo Electron Limited | Substrate tuning system and method using optical projection |
| WO2015112802A1 (en) * | 2014-01-27 | 2015-07-30 | Tokyo Electron Limited | System and method for shifting critical dimensions of patterned films |
-
2016
- 2016-12-12 TW TW105140977A patent/TWI640837B/zh active
- 2016-12-15 CN CN201611163577.XA patent/CN106896646B/zh active Active
- 2016-12-15 JP JP2016243178A patent/JP2017111446A/ja active Pending
- 2016-12-19 KR KR1020160173526A patent/KR102544422B1/ko active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6248168B1 (en) * | 1997-12-15 | 2001-06-19 | Tokyo Electron Limited | Spin coating apparatus including aging unit and solvent replacement unit |
| US20130057552A1 (en) * | 2011-09-07 | 2013-03-07 | Takao YOSHIWA | Drawing apparatus and drawing method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170073537A (ko) | 2017-06-28 |
| KR102544422B1 (ko) | 2023-06-15 |
| CN106896646A (zh) | 2017-06-27 |
| TW201730688A (zh) | 2017-09-01 |
| JP2017111446A (ja) | 2017-06-22 |
| CN106896646B (zh) | 2020-09-11 |
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