TWI640761B - 散射量測系統及其操作方法 - Google Patents

散射量測系統及其操作方法 Download PDF

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Publication number
TWI640761B
TWI640761B TW103124411A TW103124411A TWI640761B TW I640761 B TWI640761 B TW I640761B TW 103124411 A TW103124411 A TW 103124411A TW 103124411 A TW103124411 A TW 103124411A TW I640761 B TWI640761 B TW I640761B
Authority
TW
Taiwan
Prior art keywords
illumination
target
scattering measurement
illumination beam
measurement
Prior art date
Application number
TW103124411A
Other languages
English (en)
Chinese (zh)
Other versions
TW201522942A (zh
Inventor
Tzahi GRUNZWEIG
塔札希 格朗茲威格
Andrew Hill
安卓 希爾
Barry LOEVSKY
巴瑞 羅維斯凱
Original Assignee
Kla-Tencor Corporation
克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla-Tencor Corporation, 克萊譚克公司 filed Critical Kla-Tencor Corporation
Publication of TW201522942A publication Critical patent/TW201522942A/zh
Application granted granted Critical
Publication of TWI640761B publication Critical patent/TWI640761B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V14/00—Controlling the distribution of the light emitted by adjustment of elements
    • F21V14/02—Controlling the distribution of the light emitted by adjustment of elements by movement of light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2131/00—Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
    • F21W2131/40—Lighting for industrial, commercial, recreational or military use
    • F21W2131/403—Lighting for industrial, commercial, recreational or military use for machines
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW103124411A 2013-07-18 2014-07-16 散射量測系統及其操作方法 TWI640761B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361847883P 2013-07-18 2013-07-18
US61/847,883 2013-07-18

Publications (2)

Publication Number Publication Date
TW201522942A TW201522942A (zh) 2015-06-16
TWI640761B true TWI640761B (zh) 2018-11-11

Family

ID=52346681

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103124411A TWI640761B (zh) 2013-07-18 2014-07-16 散射量測系統及其操作方法

Country Status (4)

Country Link
JP (2) JP6486917B2 (enExample)
KR (2) KR102202523B1 (enExample)
TW (1) TWI640761B (enExample)
WO (1) WO2015009739A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105807573B (zh) 2014-12-31 2017-12-29 上海微电子装备（集团）股份有限公司 用于套刻误差检测的装置和方法
US10732516B2 (en) * 2017-03-01 2020-08-04 Kla Tencor Corporation Process robust overlay metrology based on optical scatterometry
US11112369B2 (en) * 2017-06-19 2021-09-07 Kla-Tencor Corporation Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
US11112691B2 (en) * 2019-01-16 2021-09-07 Kla Corporation Inspection system with non-circular pupil
EP3876037A1 (en) * 2020-03-06 2021-09-08 ASML Netherlands B.V. Metrology method and device for measuring a periodic structure on a substrate
WO2021151754A1 (en) * 2020-01-29 2021-08-05 Asml Netherlands B.V. Metrology method and device for measuring a periodic structure on a substrate
US11346657B2 (en) * 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
CN114253065B (zh) * 2021-12-20 2025-08-01 武汉天马微电子有限公司 掩膜版及其制备方法、显示面板、显示装置和光刻设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5859424A (en) * 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US20030210393A1 (en) * 2001-04-06 2003-11-13 Kla-Tencor Corporation Defect detection system
CN101154055A (zh) * 2006-09-25 2008-04-02 Asml荷兰有限公司 用于角分辨光谱光刻描述的方法和装置
JP2008532320A (ja) * 2005-03-01 2008-08-14 ケーエルエー−テンカー テクノロジィース コーポレイション ２つの回折次数による画像化に基づいたターゲット取得およびオーバレイ測定
TW201320512A (zh) * 2011-09-23 2013-05-16 Kla Tencor Corp 固態雷射及使用１９３奈米雷射之檢查系統

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7589832B2 (en) * 2006-08-10 2009-09-15 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device method
DE602007012927D1 (de) * 2006-11-27 2011-04-14 Philips Solid State Lighting Itlicher projektionsbeleuchtung
US7618163B2 (en) * 2007-04-02 2009-11-17 Ruud Lighting, Inc. Light-directing LED apparatus
DE102008046362A1 (de) * 2008-09-09 2010-03-18 Diehl Bgt Defence Gmbh & Co. Kg Gegenstandserfassungssystem mit einem Bilderfassungssystem
WO2010130516A1 (en) * 2009-05-11 2010-11-18 Asml Netherlands B.V. Method of determining overlay error
CN102460129B (zh) * 2009-06-22 2015-08-12 Asml荷兰有限公司 物体检查系统和方法
NL2008197A (en) * 2011-02-11 2012-08-14 Asml Netherlands Bv Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method.
DE102011006468B4 (de) * 2011-03-31 2014-08-28 Carl Zeiss Smt Gmbh Vermessung eines abbildenden optischen Systems durch Überlagerung von Mustern
NL2008936A (en) * 2011-07-28 2013-01-29 Asml Netherlands Bv Illumination source for use in inspection methods and/or lithography inspection and lithographic apparatus and inspection method.

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5859424A (en) * 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US20030210393A1 (en) * 2001-04-06 2003-11-13 Kla-Tencor Corporation Defect detection system
JP2008532320A (ja) * 2005-03-01 2008-08-14 ケーエルエー−テンカー テクノロジィース コーポレイション ２つの回折次数による画像化に基づいたターゲット取得およびオーバレイ測定
CN101154055A (zh) * 2006-09-25 2008-04-02 Asml荷兰有限公司 用于角分辨光谱光刻描述的方法和装置
TW201320512A (zh) * 2011-09-23 2013-05-16 Kla Tencor Corp 固態雷射及使用１９３奈米雷射之檢查系統

Also Published As

Publication number Publication date
KR20200008043A (ko) 2020-01-22
JP6745367B2 (ja) 2020-08-26
WO2015009739A1 (en) 2015-01-22
KR20160034343A (ko) 2016-03-29
JP6486917B2 (ja) 2019-03-20
KR102202523B1 (ko) 2021-01-13
JP2019078773A (ja) 2019-05-23
JP2016527501A (ja) 2016-09-08
KR102069253B1 (ko) 2020-01-22
TW201522942A (zh) 2015-06-16

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