JP6486917B2 - スキャトロメトリ測定のための照明配置 - Google Patents

スキャトロメトリ測定のための照明配置 Download PDF

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Publication number
JP6486917B2
JP6486917B2 JP2016527043A JP2016527043A JP6486917B2 JP 6486917 B2 JP6486917 B2 JP 6486917B2 JP 2016527043 A JP2016527043 A JP 2016527043A JP 2016527043 A JP2016527043 A JP 2016527043A JP 6486917 B2 JP6486917 B2 JP 6486917B2
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illumination
target
scatterometry
illumination beam
pupil plane
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Japanese (ja)
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JP2016527501A (ja
JP2016527501A5 (enExample
Inventor
ツァヒ グリュンツヴァイク
ツァヒ グリュンツヴァイク
アンディ（アンドリュー） ヒル
アンディ（アンドリュー） ヒル
バリー ロエフスキー
バリー ロエフスキー
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V14/00—Controlling the distribution of the light emitted by adjustment of elements
    • F21V14/02—Controlling the distribution of the light emitted by adjustment of elements by movement of light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2131/00—Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
    • F21W2131/40—Lighting for industrial, commercial, recreational or military use
    • F21W2131/403—Lighting for industrial, commercial, recreational or military use for machines
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/40—Caliper-like sensors
    • G01B2210/48—Caliper-like sensors for measurement of a wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP2016527043A 2013-07-18 2014-07-15 スキャトロメトリ測定のための照明配置 Active JP6486917B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361847883P 2013-07-18 2013-07-18
US61/847,883 2013-07-18
PCT/US2014/046724 WO2015009739A1 (en) 2013-07-18 2014-07-15 Illumination configurations for scatterometry measurements

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019028295A Division JP6745367B2 (ja) 2013-07-18 2019-02-20 スキャトロメトリ測定システム及び方法

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Publication Number Publication Date
JP2016527501A JP2016527501A (ja) 2016-09-08
JP2016527501A5 JP2016527501A5 (enExample) 2017-08-24
JP6486917B2 true JP6486917B2 (ja) 2019-03-20

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JP2016527043A Active JP6486917B2 (ja) 2013-07-18 2014-07-15 スキャトロメトリ測定のための照明配置
JP2019028295A Active JP6745367B2 (ja) 2013-07-18 2019-02-20 スキャトロメトリ測定システム及び方法

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US (2) US9719920B2 (enExample)
JP (2) JP6486917B2 (enExample)
KR (2) KR102069253B1 (enExample)
TW (1) TWI640761B (enExample)
WO (1) WO2015009739A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10365230B1 (en) 2014-03-19 2019-07-30 Kla-Tencor Corporation Scatterometry overlay based on reflection peak locations
CN105807573B (zh) * 2014-12-31 2017-12-29 上海微电子装备（集团）股份有限公司 用于套刻误差检测的装置和方法
KR102128488B1 (ko) 2015-12-09 2020-07-01 에이에스엠엘 홀딩 엔.브이. 플렉시블 일루미네이터
JP6731490B2 (ja) 2016-03-07 2020-07-29 エーエスエムエル ネザーランズ ビー．ブイ． 照明システムおよびメトロロジシステム
WO2018089190A1 (en) * 2016-11-09 2018-05-17 Kla-Tencor Corporation Target location in semiconductor manufacturing
US10732516B2 (en) * 2017-03-01 2020-08-04 Kla Tencor Corporation Process robust overlay metrology based on optical scatterometry
US11112369B2 (en) * 2017-06-19 2021-09-07 Kla-Tencor Corporation Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
US10622238B2 (en) 2018-06-07 2020-04-14 Kla-Tencor Corporation Overlay measurement using phase and amplitude modeling
US11112691B2 (en) * 2019-01-16 2021-09-07 Kla Corporation Inspection system with non-circular pupil
US11043239B2 (en) 2019-03-20 2021-06-22 Kla Corporation Magneto-optic Kerr effect metrology systems
EP3876037A1 (en) * 2020-03-06 2021-09-08 ASML Netherlands B.V. Metrology method and device for measuring a periodic structure on a substrate
JP7365510B2 (ja) * 2020-01-29 2023-10-19 エーエスエムエル ネザーランズ ビー．ブイ． 基板上の周期構造を測定するための計測方法およびデバイス
US11346657B2 (en) * 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
KR102919195B1 (ko) * 2020-07-06 2026-01-27 삼성전자 주식회사 경사 조명을 이용한 회절 기반 계측 장치 및 방법, 그 방법을 이용한 반도체 소자 제조방법
US12663728B2 (en) * 2021-05-04 2026-06-23 Kla Corporation Oblique illumination for overlay metrology
CN114253065B (zh) * 2021-12-20 2025-08-01 武汉天马微电子有限公司 掩膜版及其制备方法、显示面板、显示装置和光刻设备
KR20240117656A (ko) * 2021-12-23 2024-08-01 에이에스엠엘 네델란즈 비.브이. 단일 조명 소스로부터 다수의 조명 스폿을 생성하기 위한 시스템 및 방법
US12105431B2 (en) * 2022-01-25 2024-10-01 Kla Corporation Annular apodizer for small target overlay measurement
JP2023116048A (ja) * 2022-02-09 2023-08-22 キオクシア株式会社 計測装置および計測方法
US12032300B2 (en) * 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
KR20250141704A (ko) * 2023-02-02 2025-09-29 에이에스엠엘 네델란즈 비.브이. Yieldstar를 위한 제2 조명 모드 선택기(ims)
US12235588B2 (en) * 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03217814A (ja) * 1990-01-24 1991-09-25 Canon Inc 液晶プロジェクター
US5638211A (en) * 1990-08-21 1997-06-10 Nikon Corporation Method and apparatus for increasing the resolution power of projection lithography exposure system
US5859424A (en) * 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US7714995B2 (en) * 1997-09-22 2010-05-11 Kla-Tencor Corporation Material independent profiler
US6538730B2 (en) * 2001-04-06 2003-03-25 Kla-Tencor Technologies Corporation Defect detection system
US6804005B2 (en) * 2002-05-02 2004-10-12 Timbre Technologies, Inc. Overlay measurements using zero-order cross polarization measurements
JP2005164840A (ja) * 2003-12-01 2005-06-23 Canon Inc 光学系及びその設計方法
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7528953B2 (en) * 2005-03-01 2009-05-05 Kla-Tencor Technologies Corp. Target acquisition and overlay metrology based on two diffracted orders imaging
US7324193B2 (en) * 2006-03-30 2008-01-29 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US7589832B2 (en) * 2006-08-10 2009-09-15 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device method
US7573584B2 (en) * 2006-09-25 2009-08-11 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
CN101627253B (zh) * 2006-11-27 2011-05-18 飞利浦固体状态照明技术公司 用于提供均匀投影照明的方法和设备
US20080129986A1 (en) * 2006-11-30 2008-06-05 Phillip Walsh Method and apparatus for optically measuring periodic structures using orthogonal azimuthal sample orientations
US7618163B2 (en) * 2007-04-02 2009-11-17 Ruud Lighting, Inc. Light-directing LED apparatus
NL1036857A1 (nl) * 2008-04-21 2009-10-22 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
DE102008046362A1 (de) * 2008-09-09 2010-03-18 Diehl Bgt Defence Gmbh & Co. Kg Gegenstandserfassungssystem mit einem Bilderfassungssystem
NL2004094A (en) * 2009-02-11 2010-08-12 Asml Netherlands Bv Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method.
JP5277348B2 (ja) * 2009-05-11 2013-08-28 エーエスエムエル ネザーランズ ビー．ブイ． オーバーレイエラーを決定する方法
WO2010149403A1 (en) * 2009-06-22 2010-12-29 Asml Netherlands B.V. Object inspection systems and methods
KR101492205B1 (ko) * 2010-11-12 2015-02-10 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템, 및 디바이스 제조 방법
IL217843A (en) * 2011-02-11 2016-11-30 Asml Netherlands Bv Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
DE102011006468B4 (de) * 2011-03-31 2014-08-28 Carl Zeiss Smt Gmbh Vermessung eines abbildenden optischen Systems durch Überlagerung von Mustern
NL2008936A (en) 2011-07-28 2013-01-29 Asml Netherlands Bv Illumination source for use in inspection methods and/or lithography inspection and lithographic apparatus and inspection method.
US20130077086A1 (en) * 2011-09-23 2013-03-28 Kla-Tencor Corporation Solid-State Laser And Inspection System Using 193nm Laser
US9091650B2 (en) * 2012-11-27 2015-07-28 Kla-Tencor Corporation Apodization for pupil imaging scatterometry

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Publication number Publication date
US20180003630A1 (en) 2018-01-04
US10209183B2 (en) 2019-02-19
JP6745367B2 (ja) 2020-08-26
JP2016527501A (ja) 2016-09-08
JP2019078773A (ja) 2019-05-23
KR20160034343A (ko) 2016-03-29
US20150022822A1 (en) 2015-01-22
US9719920B2 (en) 2017-08-01
TW201522942A (zh) 2015-06-16
WO2015009739A1 (en) 2015-01-22
KR102202523B1 (ko) 2021-01-13
TWI640761B (zh) 2018-11-11
KR102069253B1 (ko) 2020-01-22
KR20200008043A (ko) 2020-01-22

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