KR102069253B1 - 스캐터로메트리 측정들을 위한 조명 구성들 - Google Patents

스캐터로메트리 측정들을 위한 조명 구성들 Download PDF

Info

Publication number
KR102069253B1
KR102069253B1 KR1020167003924A KR20167003924A KR102069253B1 KR 102069253 B1 KR102069253 B1 KR 102069253B1 KR 1020167003924 A KR1020167003924 A KR 1020167003924A KR 20167003924 A KR20167003924 A KR 20167003924A KR 102069253 B1 KR102069253 B1 KR 102069253B1
Authority
KR
South Korea
Prior art keywords
illumination
target
scatterometry
illumination beam
pupil plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167003924A
Other languages
English (en)
Korean (ko)
Other versions
KR20160034343A (ko
Inventor
차히 그룬츠베이크
앤디 힐 (앤드류)
배리 로에브스키
Original Assignee
케이엘에이 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 케이엘에이 코포레이션 filed Critical 케이엘에이 코포레이션
Publication of KR20160034343A publication Critical patent/KR20160034343A/ko
Application granted granted Critical
Publication of KR102069253B1 publication Critical patent/KR102069253B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F21S2/005Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V14/00Controlling the distribution of the light emitted by adjustment of elements
    • F21V14/02Controlling the distribution of the light emitted by adjustment of elements by movement of light sources
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706843Metrology apparatus
    • G03F7/706849Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21WINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2131/00Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
    • F21W2131/40Lighting for industrial, commercial, recreational or military use
    • F21W2131/403Lighting for industrial, commercial, recreational or military use for machines
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020167003924A 2013-07-18 2014-07-15 스캐터로메트리 측정들을 위한 조명 구성들 Active KR102069253B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361847883P 2013-07-18 2013-07-18
US61/847,883 2013-07-18
PCT/US2014/046724 WO2015009739A1 (en) 2013-07-18 2014-07-15 Illumination configurations for scatterometry measurements

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020207001237A Division KR102202523B1 (ko) 2013-07-18 2014-07-15 스캐터로메트리 측정들을 위한 조명 구성들

Publications (2)

Publication Number Publication Date
KR20160034343A KR20160034343A (ko) 2016-03-29
KR102069253B1 true KR102069253B1 (ko) 2020-01-22

Family

ID=52346681

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020167003924A Active KR102069253B1 (ko) 2013-07-18 2014-07-15 스캐터로메트리 측정들을 위한 조명 구성들
KR1020207001237A Active KR102202523B1 (ko) 2013-07-18 2014-07-15 스캐터로메트리 측정들을 위한 조명 구성들

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020207001237A Active KR102202523B1 (ko) 2013-07-18 2014-07-15 스캐터로메트리 측정들을 위한 조명 구성들

Country Status (4)

Country Link
JP (2) JP6486917B2 (enExample)
KR (2) KR102069253B1 (enExample)
TW (1) TWI640761B (enExample)
WO (1) WO2015009739A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105807573B (zh) * 2014-12-31 2017-12-29 上海微电子装备(集团)股份有限公司 用于套刻误差检测的装置和方法
US10732516B2 (en) * 2017-03-01 2020-08-04 Kla Tencor Corporation Process robust overlay metrology based on optical scatterometry
US11112369B2 (en) * 2017-06-19 2021-09-07 Kla-Tencor Corporation Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
US11112691B2 (en) * 2019-01-16 2021-09-07 Kla Corporation Inspection system with non-circular pupil
EP3876037A1 (en) * 2020-03-06 2021-09-08 ASML Netherlands B.V. Metrology method and device for measuring a periodic structure on a substrate
WO2021151754A1 (en) * 2020-01-29 2021-08-05 Asml Netherlands B.V. Metrology method and device for measuring a periodic structure on a substrate
US11346657B2 (en) * 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
CN114253065B (zh) * 2021-12-20 2025-08-01 武汉天马微电子有限公司 掩膜版及其制备方法、显示面板、显示装置和光刻设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5859424A (en) * 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6538730B2 (en) * 2001-04-06 2003-03-25 Kla-Tencor Technologies Corporation Defect detection system
US7528953B2 (en) * 2005-03-01 2009-05-05 Kla-Tencor Technologies Corp. Target acquisition and overlay metrology based on two diffracted orders imaging
US7589832B2 (en) * 2006-08-10 2009-09-15 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device method
US7573584B2 (en) * 2006-09-25 2009-08-11 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
DE602007012927D1 (de) * 2006-11-27 2011-04-14 Philips Solid State Lighting Itlicher projektionsbeleuchtung
US7618163B2 (en) * 2007-04-02 2009-11-17 Ruud Lighting, Inc. Light-directing LED apparatus
DE102008046362A1 (de) * 2008-09-09 2010-03-18 Diehl Bgt Defence Gmbh & Co. Kg Gegenstandserfassungssystem mit einem Bilderfassungssystem
JP5277348B2 (ja) * 2009-05-11 2013-08-28 エーエスエムエル ネザーランズ ビー.ブイ. オーバーレイエラーを決定する方法
KR20120039659A (ko) * 2009-06-22 2012-04-25 에이에스엠엘 홀딩 엔.브이. 물체 검사 시스템 및 물체 검사 방법
IL217843A (en) * 2011-02-11 2016-11-30 Asml Netherlands Bv A system and method for testing, a lithographic system, a cell for lithographic processing, and a method for producing a device
DE102011006468B4 (de) * 2011-03-31 2014-08-28 Carl Zeiss Smt Gmbh Vermessung eines abbildenden optischen Systems durch Überlagerung von Mustern
NL2008936A (en) 2011-07-28 2013-01-29 Asml Netherlands Bv Illumination source for use in inspection methods and/or lithography inspection and lithographic apparatus and inspection method.
US20130077086A1 (en) * 2011-09-23 2013-03-28 Kla-Tencor Corporation Solid-State Laser And Inspection System Using 193nm Laser

Also Published As

Publication number Publication date
JP6745367B2 (ja) 2020-08-26
JP2016527501A (ja) 2016-09-08
TWI640761B (zh) 2018-11-11
KR20160034343A (ko) 2016-03-29
JP6486917B2 (ja) 2019-03-20
JP2019078773A (ja) 2019-05-23
WO2015009739A1 (en) 2015-01-22
TW201522942A (zh) 2015-06-16
KR20200008043A (ko) 2020-01-22
KR102202523B1 (ko) 2021-01-13

Similar Documents

Publication Publication Date Title
KR102069253B1 (ko) 스캐터로메트리 측정들을 위한 조명 구성들
US10209183B2 (en) Scatterometry system and method for generating non-overlapping and non-truncated diffraction images
JP6073832B2 (ja) 次数選択されたオーバレイ測定
KR102571918B1 (ko) 위치 계측을 위한 계측 센서
TWI465714B (zh) 用於檢查圖案化樣本之光學系統及方法(一)
TWI864304B (zh) 使用條紋摩爾及光學摩爾效應之偏移計量學
US20230133640A1 (en) Moiré scatterometry overlay
US7528953B2 (en) Target acquisition and overlay metrology based on two diffracted orders imaging
KR102668017B1 (ko) 광학적 3차원 토포그래피 측정을 위한 방법 및 시스템
JP7762290B2 (ja) 複数の空間周波数を有するオーバレイターゲットを使用した走査オーバレイ計測
US20130148115A1 (en) Optical system and method for inspection of patterned samples
KR20250005042A (ko) 다수의 조명 파라미터 및 분리된 이미징을 사용한 다방향 오버레이 계측
JP6654251B2 (ja) リソグラフィ方法およびリソグラフィ装置
JP2025527990A (ja) 直交微細ピッチ分割による光波散乱計測オーバーレイ計測
KR20250159638A (ko) 멀티 오버레이 적층형 격자 계측 타겟
WO2015200315A1 (en) Rotated boundaries of stops and targets
US20250314973A1 (en) METHODS FOR MEASUREMENT OF rAIM

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20160216

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
A302 Request for accelerated examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20190715

Comment text: Request for Examination of Application

PA0302 Request for accelerated examination

Patent event date: 20190715

Patent event code: PA03022R01D

Comment text: Request for Accelerated Examination

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20190722

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20191015

A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20200114

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20200116

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20200117

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20230104

Start annual number: 4

End annual number: 4