TWI640232B - Method for manufacturing insulating film and multilayered printed circuit board - Google Patents

Method for manufacturing insulating film and multilayered printed circuit board Download PDF

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TWI640232B
TWI640232B TW106138301A TW106138301A TWI640232B TW I640232 B TWI640232 B TW I640232B TW 106138301 A TW106138301 A TW 106138301A TW 106138301 A TW106138301 A TW 106138301A TW I640232 B TWI640232 B TW I640232B
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resin layer
layer
metal
polymer resin
group
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TW106138301A
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TW201831061A (en
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鄭遇載
慶有真
崔炳柱
崔寶允
李光珠
鄭珉壽
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南韓商Ｌｇ化學股份有限公司
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4652—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
    • H05K3/4655—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern by using a laminate characterized by the insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
    • H05K3/025—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates by transfer of thin metal foil formed on a temporary carrier, e.g. peel-apart copper
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/467—Adding a circuit layer by thin film methods
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0154—Polyimide

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Laminated Bodies (AREA)
  • Materials For Photolithography (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

本發明關於製造絕緣層之方法，其可以較快及較簡單方式製造、可改進方法效率、可容易調整絕緣層之厚度、且可形成高解析度通孔而無物理損害，及使用由該製造絕緣層之方法獲得之絕緣層製造多層印刷電路板之方法。The invention relates to a method for manufacturing an insulating layer, which can be manufactured in a faster and simpler manner, can improve the efficiency of the method, can easily adjust the thickness of the insulating layer, and can form a high-resolution through hole without physical damage, and use the manufacturing Method of Insulating Layer A method of manufacturing a multilayer printed circuit board from an insulating layer.

Description

製造絕緣膜及多層印刷電路板的方法Method for manufacturing insulating film and multilayer printed circuit board

與相關申請案之交互參考 　　[0001] 本申請案主張分別於2016年11月11日及2017年11月1日向韓國智慧財產局提出申請之韓國專利申請案第10-2016-0150510號及韓國專利申請案第 10-2017-0144765號之優先權利益，其之揭示內容在此以其之整體被併入。 　　[0002] 本發明關於一種用以製造絕緣層之方法，及一種用以製造多層印刷電路板之方法。更特定而言，本發明關於一種方法，用以製造絕緣層，其可以較快及較簡單方式製造，可改進方法效率，可容易調整絕緣層之厚度，且可形成高解析度通孔而無物理損害，及使用由該製造絕緣層之方法獲得之絕緣層之製造多層印刷電路板之方法。Cross-Reference to Related Applications [0001] This application claims Korean Patent Application No. 10-2016-0150510 and Korean Patent Application to the Korea Intellectual Property Office on November 11, 2016 and November 1, 2017, respectively. Priority of the benefit of the application No. 10-2017-0144765, the disclosure of which is incorporated herein in its entirety. The present invention relates to a method for fabricating an insulating layer, and a method for fabricating a multilayer printed circuit board. More particularly, the present invention relates to a method for fabricating an insulating layer that can be fabricated in a faster and simpler manner, improves process efficiency, can easily adjust the thickness of the insulating layer, and can form high resolution vias without Physical damage, and a method of manufacturing a multilayer printed circuit board using an insulating layer obtained by the method of manufacturing an insulating layer.

[0003] 最近電子裝置被漸增地小型化、減小重量化及高度功能化。為了此目的，由於增層PCB(增層之印刷電路板)之應用領域主要於小裝置方面快速擴張，多層印刷電路板之使用正快速增加中。 　　[0004] 多層印刷電路板可為由平面佈線至三維佈線。尤其於工業電子領域中，多層印刷電路板改進例如積體電路(IC)之功能元件及於大型積體電路(LSI)中之積體度，及亦對電子裝置之產品小型化、重量降低、高功能性、結構電功能之積體性、縮短組裝時間、降低成本等為有利的。 　　[0005] 使用於這些應用領域中之增層PCB必須要有在不同層之間之連接。為了此目的，已使用一種方法，以形成相對應於多層印刷電路板之層間電連接路徑之通孔，但於降低通孔直徑上有限制，且難以達到高密度。 　　[0006] 因此，已建議利用其直徑比通孔者小的微細突出物，作為在多層印刷電路板之層間之電連接路徑。然而，被使用於相關技術領域中之方法，已大多經由在單一電路上形成金屬組件之微細突出物、以絕緣層覆蓋微細突出物、及然後物理移除絕緣層直到微細突出物曝露於表面上而進行。有一限制為絕緣層於物理移除方法中容易破裂，且難以容易地符合所需之厚度。[0003] Recently, electronic devices have been increasingly miniaturized, reduced in weight, and highly functionalized. For this purpose, the use of multilayer printed circuit boards is rapidly increasing due to the rapid expansion of application areas of build-up PCBs (additional printed circuit boards) primarily for small devices. [0004] A multilayer printed circuit board may be from planar wiring to three-dimensional wiring. In particular, in the field of industrial electronics, multilayer printed circuit boards improve functional components such as integrated circuit (IC) and integrated circuits in large integrated circuits (LSI), and also miniaturize and reduce weight of electronic devices. It is advantageous to have high functionality, structural electrical functions, shorten assembly time, and reduce costs. [0005] The build-up PCB used in these fields of application must have connections between different layers. For this purpose, a method has been used to form via holes corresponding to the interlayer electrical connection paths of the multilayer printed circuit board, but there is a limit in reducing the diameter of the via holes, and it is difficult to achieve high density. [0006] Therefore, it has been proposed to use a fine protrusion having a diameter smaller than that of a through hole as an electrical connection path between layers of a multilayer printed circuit board. However, methods used in the related art have mostly formed by forming fine protrusions of metal components on a single circuit, covering fine protrusions with an insulating layer, and then physically removing the insulating layer until the fine protrusions are exposed on the surface. And proceed. There is a limitation that the insulating layer is easily broken in the physical removal method, and it is difficult to easily conform to the desired thickness.

[本發明之詳述] [技術難題] 　　[0007] 本發明之一目標為提供一方法，用以製造絕緣層，其可以較快及較簡單方式製造，可改進方法效率，可容易調整絕緣層之厚度，且可形成高解析度通孔而無物理損害。 　　[0008] 本發明之另一目標為提供用以製造多層印刷電路板之方法，其使用由製造絕緣層之該方法獲得之絕緣層。 [技術解決方法] 　　[0009] 本發明之一實施例提供用以製造絕緣層之方法，包括以下步驟：以包含鹼溶性樹脂及可熱固化黏合劑之聚合物樹脂層，密封半導體元件，該半導體元件具有形成於其表面上之金屬突出物；於該聚合物樹脂層上形成圖形，同時保持金屬突出物形成於其表面上之半導體元件被密封之狀態；首次固化(primarily curing)該聚合物樹脂層，其中形成圖形；以鹼性水溶液蝕刻該經固化聚合物樹脂層之表面，以曝露該金屬突出物；及於金屬突出物被曝露之狀態下，二次固化(secondarily curing)該聚合物樹脂層。 　　[0010] 本發明之另一實施例提供用以製造多層印刷電路板之方法，包含於由該製造絕緣層之方法獲得之絕緣層上形成金屬圖形層之步驟。 　　[0011] 依照本發明之特定實施例之用以製造絕緣層之方法、及用以製造多層印刷電路板之方法，將更詳細敘述於下。 　　[0012] 依照本發明之一實施例，可提供用以製造絕緣層之方法，其包括以下步驟：以包含鹼溶性樹脂及可熱固化黏合劑之聚合物樹脂層，密封半導體元件，該半導體元件具有形成於其表面上之金屬突出物；於該聚合物樹脂層上形成圖形，同時保持具有金屬突出物形成於其表面上之半導體元件被密封之狀態；首次固化該聚合物樹脂層，其中形成圖形；以鹼性水溶液蝕刻該經固化聚合物樹脂層之表面，以曝露該金屬突出物；及於金屬突出物被曝露的狀態下，二次固化該聚合物樹脂層。 　　[0013] 本案發明人經由實驗發現，當該實施例之製造絕緣層之方法被使用時，經由使用鹼性水溶液之化學蝕刻，被聚合物樹脂層密封之金屬突出物被曝露，因而預防對絕緣層之物理損害，容易調整層厚度至所需之範圍，及再者改進方法效率，因為絕緣層可被以較容易之方法於較短時間內製造。本發明係基於此項發現被完成。 　　[0014] 尤其，於依照一實施例之製造絕緣層之方法中，經由施加能以適當程度穩定蝕刻之新組分之聚合物樹脂及特定鹼性水溶液，金屬突出物可容易地於絕緣層表面上被曝露。因此，該方法具有可容易地經由曝露之金屬突出物製造多層印刷電路板之優點。 　　[0015] 再者，由於依照一實施例之用以製造絕緣層方法包括一步驟，其係於聚合物樹脂層上形成圖形、同時保持一狀態，其中具有金屬突出物形成於其表面上之半導體元件被密封，可形成高解析度細開口(通孔)，而無對聚合物樹脂層之物理損害，不影響半導體元件。於以下敘述之用以製造多層印刷電路板之方法中，可以金屬填充細開口(通孔)以作為在相對於絕緣層之下方基板與上方基板間之電路，因而改進於多層結構電路板中之積體度。 　　[0016] 更特定而言，依照一實施例用以製造絕緣層之方法可包括以下步驟：以包含鹼溶性樹脂及可熱固化黏合劑之聚合物樹脂層，密封半導體元件，該半導體元件具有形成於其表面上之金屬突出物；於該聚合物樹脂層上形成圖形，同時保持具有金屬突出物形成於其表面上之半導體元件被密封之狀態；首次固化該聚合物樹脂層，其中形成圖形；以鹼性水溶液蝕刻經固化聚合物樹脂層之表面，以曝露金屬突出物；及於金屬突出物被曝露的狀態下，二次固化該聚合物樹脂層。 　　[0017] 首先，於以包含鹼溶性樹脂及可熱固化黏合劑聚合物樹脂層密封具有形成於其表面上之金屬突出物的半導體元件，之步驟中，該半導體元件可具有形成於其表面上之金屬突出物。於半導體元件表面上形成金屬突出物之方法之實例無特別限制，且例如可使用用於光敏性樹脂層圖形之開口部分之電鍍方法、或使用黏著劑之附著方法。 　　[0018] 作為用於光敏性樹脂層圖形之開口部分之電鍍方法特定實例，可使用形成金屬突出物之方法，包括於半導體元件上壓層光敏性樹脂層、於光敏性樹脂層上形成圖形、及進行電鍍之步驟。 　　[0019] 更特定而言，光敏性樹脂層可顯出光敏性及鹼溶性。因此，分子結構可經由照射光至光敏性樹脂層上之曝露步驟而變形，及樹脂層可經由接觸鹼顯影溶液之顯影步驟被蝕刻或移除。 　　[0020] 因此，當一部分之光敏性樹脂層被選擇性曝光及然後以鹼顯影時，曝露部分不被顯影，而只有未曝露部分可被選擇性蝕刻及移除。如上述，一部分之光敏性樹脂層保持完整而無經由曝露被以鹼顯影，稱為光敏性樹脂圖形。 　　[0021] 亦即，作為曝露光敏性樹脂層之方法之實例，曝露可被經由以下方法選擇性進行：使具有預定圖形之光罩接觸光敏性樹脂層及然後照射紫外光之方法，經由投影物鏡使包括於光罩中之預定圖形成像及然後選擇性照射紫外光之方法，使用雷射二極體作為光源直接成像圖形及然後照射紫外光之方法，或類似者。此時，紫外光照射之條件之實例可包括照射5 mJ/cm 2至600 mJ/cm 2之光量。 　　[0022] 再者，於曝露之後以鹼顯影光敏性樹脂層之方法之實例可包括以鹼性顯影劑處理之方法。鹼性顯影劑之實例無特別限制，但例如鹼性水溶液例如氫氧化鉀、氫氧化鈉、碳酸鈉、碳酸鉀、磷酸鈉、矽酸鈉、氨、氫氧化四甲基銨、胺、及類似者，可經由調整其之濃度及溫度被使用，及作為產品被銷售之鹼性顯影劑亦可被使用。鹼性顯影劑之特定使用量為無特別限制，但必須調整濃度及溫度至使光敏性樹脂圖形不被損害者。例如，可於25℃至35℃使用0.5%至3%之水性碳酸鈉溶液。 　　[0023] 同時，於電鍍步驟中，電鍍方法之實例包括乾式沉積方法及濕式沉積方法。乾式沉積方法之特定實例包括真空蒸氣沉積、離子電鍍、濺鍍、及類似者。 　　[0024] 另一方面，特定濕式沉積方法之實例包括多種金屬及類似者之無電電鍍，其中無電銅電鍍為普遍的，且粗糙化處理方法可再被包含於蒸氣沉積之前或之後。 　　[0025] 粗糙化處理方法可視條件而定為乾或濕式方法。乾式方法之實例包括真空處理、大氣壓力處理、氣體電漿處理、氣體準分子UV處理、及類似者。濕式方法之實例包括除膠渣處理。經由這些粗糙化處理方法，可以增高金屬薄膜之表面粗糙度，及因此改進對沉積於金屬薄膜上金屬之附著性。 　　[0026] 再者，為了只留下金屬突出物，可再包括於電鍍步驟之後移除光敏性樹脂層之步驟。當移除光敏性樹脂圖形時，較佳為使用能只移除光敏性樹脂層、而儘可能無移除下方半導體元件及金屬突出物之方法。 　　[0027] 可進行光阻劑剝離液體處理、除膠渣方法、電漿蝕刻、或類似者並且可使用這些方法之任何組合作為光敏性樹脂圖形之剝離方法之特定實例。 　　[0028] 另一方面，可使用於被動元件(例如MLCC)或主動元件(例如半導體晶片)之表面上形成金屬突出物，然後經由使用絕緣黏著劑或類似者黏合所形成金屬突出物之相反側至半導體元件表面之方法作為使用黏著劑之黏合方法之特定實例。此時，用於光敏性樹脂層圖形之開口部分之電鍍方法可以其本身而被使用作為於被動元件或主動元件表面上形成金屬突出物之方法。例如，可使用光敏性樹脂層圖形形成於被動元件或主動元件表面上而後將金屬電鍍於圖形之開口部分中之方法。 　　[0029] 聚合物樹脂層可具有1微米至500微米、3微米至500微米、3微米至200微米、1微米至60微米、或5微米至30微米之厚度，且金屬突出物可具有1微米至20微米之高度、及3微米至30微米之截面直徑。截面直徑可意指截面之直徑或最大直徑，其中金屬突出物被於垂直於金屬突出物高度方向之方向切割。例如，金屬突出物之形狀可包括圓形柱、圓錐形截錐體、多角柱、多角截錐體、倒轉的截錐體、倒轉的多角截錐體、或類似者。包括於金屬突出物中金屬組分之實例亦無特別限制，且可使用例如導電性金屬，例如銅及鋁。 　　[0030] 具有金屬突出物形成於其一表面上之半導體元件可被以聚合物樹脂層密封。更特定而言，半導體元件可為形成於基板上之狀態存在，該基板包括於下方部分之半導體材料，例如電路板如銅箔壓層板、片、多層印刷線路板、及矽晶圓。為了於基板上形成半導體元件，可運用於基板表面上形成黏著劑層及黏合半導體元件之方法，或於半導體元件上形成黏著劑層及黏合半導體元件於基板上之方法而無限制。 　　[0031] 黏著劑層之實例無特別限制，且可使用廣知於半導體元件及電及電子材料領域中之多種黏著劑層而無限制。例如，可使用可脫黏之暫時性黏著劑或晶粒黏合膜(DAF)。於半導體元件以此方式存在於基板上之狀態中，可經由形成聚合物樹脂層於基板上之方法而密封導體線路。 　　[0032] 用以形成聚合物樹脂層於基板上之方法之實例無特別限制。然而，例如一方法可被使用，其中用以形成聚合物樹脂層之聚合物樹脂組成物可被直接塗覆於基板上，或聚合物樹脂組成物可被塗覆於載體膜上以形成聚合物樹脂層，及然後基板及聚合物樹脂層被壓層。 　　[0033] 由於具有金屬突出物形成於其之一表面上之半導體元件被以聚合物樹脂層密封，半導體元件被構成使所有之表面，除了與形成於下方部分基板接觸之部分及與金屬突出物接觸之部分之外，可與聚合物樹脂層接觸。此外，形成於半導體元件表面上之金屬突出物之所有表面，亦被聚合物樹脂層密封，且可與聚合物樹脂層接觸。 　　[0034] 聚合物樹脂層意指經由乾燥包含鹼溶性樹脂及可熱固化黏合劑之聚合物樹脂組成物所形成之膜。聚合物樹脂層可包含可熱固化之黏合劑，其量相對於100重量份之鹼溶性樹脂為1至150重量份、10至100重量份、或20至50重量份之可熱固化黏合劑。當可熱固化黏合劑之含量太大時，聚合物樹脂層之顯影性質被劣化且強度可被降低。相反地，當可熱固化黏合劑之含量變成太低時，不只聚合物樹脂層被過度顯影，且亦可降低塗層均勻性。 　　[0035] 可熱固化之黏合劑可包括選自以下之至少一個官能基：可熱固化之官能基、氧環丁烷基、環狀醚基、環狀硫醚基、氰化物基、順丁烯二醯亞胺基、及苯并□□基、及環氧基。亦即，可熱固化之黏合劑必須包括環氧基，且除了環氧基之外可包含氧環丁烷基、環狀醚基、環狀硫醚基、氰化物基、順丁烯二醯亞胺基、苯并□□基、或二或更多個彼者之混合物。此可熱固化之黏合劑可與鹼溶性樹脂或類似者經由熱固化形成交聯鍵，因而確保絕緣層之耐熱性或機械性質。 　　[0036] 更特定而言，於一分子中包含二或更多個上述官能基之多官能性樹脂化合物可被使用作為可熱固化之黏合劑。 　　[0037] 多官能性樹脂化合物可包括樹脂，其於一分子中包含二或更多個環狀醚基及╱或環狀硫醚基(以下稱為環狀(硫)醚基)。 　　[0038] 於一分子中包含二或更多個環狀(硫)醚基之可熱固化黏合劑可為化合物，該化合物於一分子中具有二或更多個選自3、4或5-員環狀醚基或環狀硫醚基中之任何一種或兩種。 　　[0039] 於一分子中具有二或更多個環狀硫醚基之化合物之實例包括Japan Epoxy Resins Co., Ltd.所製造之雙酚A型之環硫化物樹脂YL 7000，及類似者 　　[0040] 此外，多官能性樹脂化合物可包含於一分子中包含二或更多個環氧基之多官能性環氧化合物、於一分子中包含至少二或更多個氧環丁烷基多官能性之氧環丁烷化合物、或包含至少二或更多個硫醚基之環硫化物樹脂、於一分子中包含至少二或更多個氰化物基之多官能性氰酸酯化合物、或於一分子中包含至少二或更多個苯并□□基之多官能性苯并□□化合物、及類似者。 　　[0041] 多官能性環氧化合物之特定實例可包括雙酚A型之環氧樹脂、氫化雙酚A型之環氧樹脂、溴化雙酚A型之環氧樹脂、雙酚F型之環氧樹脂、雙酚S型之環氧樹脂、酚醛型之環氧樹脂、酚醛環氧樹脂、甲基酚醛環氧樹脂、N-環氧丙基環氧樹脂、雙酚A之酚醛環氧樹脂、二甲苯酚環氧樹脂、雙酚環氧樹脂、螯合環氧樹脂、乙二醛環氧樹脂、包含胺基之環氧樹脂、經橡膠改質之環氧樹脂、二環戊二烯酚環氧樹脂、二環氧丙基酞酸酯樹脂、雜環狀環氧樹脂、四環氧丙基二甲苯醯基乙烷樹脂、經聚矽氧改質之環氧樹脂、經ε-己內酯改質之環氧樹脂、及類似者。再者，為了賦予阻燃性，其結構有例如磷之原子被導入之化合物可被使用。這些環氧樹脂可經由熱固化改進性質，例如經固化塗覆膜之附著性、焊劑耐熱性、耐無電電鍍性、及類似者。 　　[0042] 多官能性氧環丁烷化合物之實例可包括多官能性氧環丁烷，例如雙[(3-甲基-3-氧環丁烷基甲氧基)甲基]醚、雙[(3-乙基-3-氧環丁烷基甲氧基)甲基]醚、1,4-雙[(3-甲基-3-氧環丁烷基甲氧基)甲基]苯、1,4-雙[(3-乙基-3-氧環丁烷基甲氧基)甲基]苯、丙烯酸(3-甲基-3-氧環丁烷基)甲酯、丙烯酸(3-乙基-3-氧環丁烷基)甲酯、甲基丙烯酸(3-甲基-3-氧環丁烷基)甲酯、甲基丙烯酸(3-乙基-3-氧環丁烷基)甲酯、及其之低聚物或共聚物，且除此之外可包括氧環丁烷醇與包含羥基之樹脂，例如酚醛樹脂、聚(對羥基苯乙烯)、cardo-型雙酚、杯芳烴(calixarenes)、間苯二酚杯芳烴(calixresorcinarenes)、倍半矽氧烷、及類似者，之醚化產物。此外，可包括具有氧環丁烷之不飽和單體與(甲基)丙烯酸烷酯之共聚物。 　　[0043] 多官能性氰酸酯化合物之實例可包括雙酚A型之氰酸酯樹脂、雙酚E型之氰酸酯樹脂、雙酚F型之氰酸酯樹脂、雙酚S型之氰酸酯樹脂、雙酚M型之氰酸酯樹脂、酚醛型之氰酸酯樹脂、苯酚醛型之氰酸酯樹脂、甲酚酚醛型氰酸酯樹脂、酚醛型之雙酚A之氰酸酯樹脂、雙酚型之氰酸酯樹脂、其之低聚物或共聚物、及類似者。 　　[0044] 多官能性順丁烯二醯亞胺化合物之實例可包括4,4’-二苯基甲烷雙馬來亞醯胺、苯基甲烷雙馬來亞醯胺、間苯基甲烷雙馬來亞醯胺、雙酚A二苯基醚雙馬來亞醯胺、3,3’-二甲基-5,5’-二乙基-4,4’-二苯基甲烷雙馬來亞醯胺、4-甲基-1,3-伸苯基雙馬來亞醯胺、1,6’-雙馬來亞醯胺-(2,2,4-三甲基)己烷)、及類似者。 　　[0045] 多官能性苯并□□化合物之實例可包括雙酚A型之苯并□□樹脂、雙酚F型之苯并□□樹脂、酚酞型之苯并□□樹脂、硫二酚型之苯并□□樹脂、二環戊二烯型之苯并□□樹脂、3,3-(伸甲基-1,4-二伸苯基)雙(3,4-二氫-2H-1,3-苯并□□)樹脂、及類似者。 　　[0046] 多官能性樹脂化合物之更特定實例可包括YDCN-500-80P(Kukdo Chemical Co. Ltd.)、苯酚醛型之氰化物酯樹脂PT-30S(Lonza Ltd.)、苯基甲烷型之順丁烯二醯亞胺樹脂BMI-2300(Daiwa Kasei Co., Ltd.)、P-d型之苯并□□樹脂(Shikoku Chemicals)、及類似者。 　　[0047] 同時，鹼溶性樹脂可包括二或更多個酸官能基，及二或更多個經胺基取代之環狀醯亞胺官能基。酸官能基之實例無特別限制，但包括羧基或酚基。鹼溶性樹脂包括至少二或更多個酸官能基，故聚合物樹脂層顯出較高之鹼顯影性質，且聚合物樹脂層之顯影速率可被控制。 　　[0048] 經胺基取代之環狀醯亞胺官能基於官能基之結構中包括胺基及環狀醯亞胺基，且可包括其之至少二或更多者。由於鹼溶性樹脂包含至少二或更多個經胺基取代之環狀醯亞胺官能基，鹼溶性樹脂具有一結構，其中存在大數目之包含於胺基中之活性氫。因此，當在熱固化期間增高對可熱固化黏合劑之反應性時，固化密度可增高，因而改進耐熱性可靠度及機械性質。 　　[0049] 此外，由於有許多環狀醯亞胺官能基存在於鹼溶性樹脂中，極性因包含於環狀醯亞胺官能基中之羰基及三級胺基而增高，故鹼溶性樹脂之界面附著性可被增高。因而，包含鹼溶性樹脂之聚合物樹脂層可對壓層於上方之金屬層具有增高之界面附著性。 　　[0050] 更特定而言，經胺基取代之環狀醯亞胺官能基可包括以下化學式1代表之官能基。 [0051] 於化學式1中，R 1為具有1至10個碳原子、1至5個碳原子、或1至3個碳原子之伸烷基或烯基，及“*”意指一鍵結點。伸烷基為雙價官能基，衍生自鏈烷，例如線形、分枝、或環狀基，且包括伸甲基、正伸乙基、伸丙基、異伸丁基、二級伸丁基、三級伸丁基、伸戊基、伸己基、及類似者。包含於伸烷基中一或多個氫原子可為經另一取代基取代，且其他取代基之實例包含具有1至10個碳原子之烷基、具有2至10個碳原子之烯基、具有2至10個碳原子之炔基、具有6至12個碳原子之芳基、具有2至12個碳原子之雜芳基、具有6至12個碳原子之芳烷基、鹵素原子、氰基、胺基、甲脒基、硝基、醯胺基、羰基、羥基、磺醯基、胺甲酸基、具有1至10個碳原子之烷氧基、及類似者。 　　[0052] 此處使用之用語“經取代”意指被鍵結以代替化合物中氫原子之另一官能基，且經取代之位置不被限制，只要為氫原子被取代之位置即可，亦即，於該處取代基為可取代者的位置。當二或更多個取代基經取代時，該二或更多個取代基可為彼此相同或不同。 　　[0053] 烯基意指上述伸烷基於其之中間或末端包含至少一個碳-碳雙鍵，且其之實例包括伸乙基、伸丙基、伸丁基、伸己基、伸乙醯基、及類似者。於烯基中之一或多個氫原子可以與伸烷基相同方式經取代基取代。 　　[0054] 較佳，經胺基取代之環狀醯亞胺官能基可為以下化學式2代表之官能基。 於化學式2中，“*”意指一鍵結點。 　　[0055] 如上述，鹼溶性樹脂包括經胺基取代之環狀醯亞胺官能基、連同酸官能基。特定而言，酸官能基可鍵結至經胺基取代之環狀醯亞胺官能基之至少一個末端。此時，經胺基取代之環狀醯亞胺官能基及酸官能基，可經由經取代或未經取代之伸烷基、或經取代或未經取代之伸芳基而鍵結。例如，酸官能基可經由經取代或未經取代之伸烷基、或經取代或未經取代之伸芳基，鍵結至包含於經胺基取代之醯亞胺官能基中之胺基末端。酸官能基可經由經取代或未經取代之伸烷基、或經取代或未經取代之伸芳基，鍵結至包含於經胺基取代之醯亞胺官能基中之環狀醯亞胺官能基末端。 　　[0056] 更特定而言，包含於經胺基取代之環狀醯亞胺官能基中之胺基末端，意指包含於化學式1中胺基之氮原子，及包含於經胺基取代之環狀醯亞胺官能基中之醯亞胺官能基末端，意指包含於化學式1中環狀醯亞胺官能基之氮原子。 　　[0057] 伸烷基為雙價官能基，衍生自鏈烷，例如線形、分枝、或環狀基，且包括伸甲基、伸乙基、伸丙基、異伸丁基、二級伸丁基、三級伸丁基、伸戊基、伸己基、及類似者。包含於伸烷基中之一或多個氫原子可經另一取代基取代，且取代基之實例包括具有1至10個碳原子之烷基、具有2至10個碳原子之烯基、具有2至10個碳原子之炔基、具有6至12個碳原子之芳基、具有2至12個碳原子之雜芳基、具有6至12個碳原子之芳烷基、鹵素原子、氰基、胺基、甲脒基、硝基、醯胺基、羰基、羥基、磺醯基、胺甲酸基、具有1至10個碳原子之烷氧基、及類似者。 　　[0058] 伸芳基意指二價官能基，衍生自芳烴，例如環狀基，且可包括苯基、萘基、或類似者。包含於伸芳基中之一或多個氫原子可經另一取代基取代。取代基之實例包括具有1至10個碳原子之烷基、具有2至10個碳原子之烯基、具有2至10個碳原子之炔基、具有6至12個碳原子之芳基、具有2至12個碳原子之雜芳基、具有6至12個碳原子之芳烷基、鹵素原子、氰基、胺基、甲脒基、硝基、醯胺基、羰基、羥基、磺醯基、胺甲酸基、具有1至10個碳原子之烷氧基、及類似者。 　　[0059] 用以製造鹼溶性樹脂之方法之實例無特別限制，但例如鹼溶性樹脂可被經由環狀不飽和醯亞胺化合物與胺化合物之反應製造。於此情形中，環狀不飽和醯亞胺化合物及胺化合物之至少一者包含取代於其末端之酸官能基。亦即，酸官能基可為於環狀不飽和醯亞胺化合物、胺化合物、或此二化合物二者之末端取代。酸官能基之細節為如上述。 　　[0060] 環狀醯亞胺化合物為包含上述環狀醯亞胺官能基之化合物，及環狀不飽和醯亞胺化合物意指於環狀醯亞胺化合物中包含至少一個不飽和鍵(亦即雙鍵或三鍵)之化合物。 　　[0061] 可經由包含於胺化合物中之胺基、與包含於環狀不飽和醯亞胺化合物中之雙鍵或三鍵之反應而製造鹼溶性樹脂。 　　[0062] 環狀不飽和醯亞胺化合物與胺化合物反應之重量比之實例無特別限制，但例如，以100重量份之環狀不飽和醯亞胺化合物為基準，可藉由以10至80重量份，或30至60重量份之量混合，而反應胺化合物。 　　[0063] 環狀不飽和醯亞胺化合物之實例包括N-經取代順丁烯二醯亞胺化合物。用語“N-經取代”意指官能基被鍵結至包含於順丁烯二醯亞胺化合物中之氮原子以代替氫原子，及N-經取代順丁烯二醯亞胺化合物可被分類成單官能性N-經取代順丁烯二醯亞胺化合物及多官能性N-經取代順丁烯二醯亞胺化合物，視N-經取代順丁烯二醯亞胺化合物之數目而定。 　　[0064] 單官能性N-經取代順丁烯二醯亞胺化合物為化合物，其中包含於一個順丁烯二醯亞胺化合物中之氮原子經官能基取代，及多官能性N-經取代順丁烯二醯亞胺化合物為化合物，其中包含於二或更多個順丁烯二醯亞胺化合物中每一者之氮原子經由官能基鍵結。 　　[0065] 於單官能性N-經取代順丁烯二醯亞胺化合物中，取代於包含於順丁烯二醯亞胺化合物中之氮原子上之官能基可包含但不限於多種已知之脂族、脂環族、或芳族官能基，及取代於氮原子上之官能基可包括官能基，其中脂族、脂環族、或芳族官能基為經酸性官能基取代。酸官能基之細節為如上述。 　　[0066] 單官能性N-經取代順丁烯二醯亞胺化合物之特定實例包括鄰甲基苯基順丁烯二醯亞胺、對羥苯基順丁烯二醯亞胺、對羧基苯基順丁烯二醯亞胺、十二基順丁烯二醯亞胺、或類似者。 　　[0067] 於多官能性N-經取代順丁烯二醯亞胺化合物中，包含於二或更多個順丁烯二醯亞胺化合物之每一者中之介於氮-氮鍵間之官能基可包含但不限於多種已知之脂族、脂環族、或芳族官能基。於特定實施例中，4,4’-二苯基甲烷官能基及類似者可被使用。取代於氮原子上之官能基可包括官能基，其中脂族、脂環族、或芳族官能基為經酸官能基取代。酸官能基之細節為如上述。 　　[0068] 多官能性N-經取代順丁烯二醯亞胺化合物之特定實例包括4,4’-二苯基甲烷雙馬來亞醯胺(BMI-1000、BMI-1100等，可得自Daiwakasei Industry Co., Ltd.)、苯基甲烷雙馬來亞醯胺、間伸苯基甲烷雙馬來亞醯胺、雙酚A二苯基醚雙馬來亞醯胺、3,3’-二甲基-5,5’-二乙基-4,4’-二苯基甲烷雙馬來亞醯胺、4-甲基-1,3-伸苯基雙馬來亞醯胺、1,6’-雙馬來亞醯胺-(2,2,4-三甲基)己烷、及類似者。 　　[0069] 胺化合物可為一級胺化合物，包含至少一個胺基(-NH 2)於分子結構中。更佳，可使用經胺基取代之羧酸化合物、包含至少兩個胺基之多官能性胺化合物、或其之混合物。 　　[0070] 於經胺基取代之羧酸化合物中，羧酸化合物為化合物，其包含羧酸(-COOH)官能基於分子中，且其可包括所有之脂族、脂環族、及芳族羧酸，視鍵結至羧酸官能基之烴種類而定。由於有許多羧酸官能基，其為酸官能基，經由經胺基取代之羧酸化合物被包含於鹼溶性樹脂中，因而可改良鹼溶性樹脂之顯影性質。 　　[0071] 特定而言，經由經胺基取代之羧酸化合物與環狀不飽和醯亞胺化合物之反應所製造之鹼溶性樹脂，可具有50毫克KOH/克至250毫克KOH/克，或70毫克KOH/克至200毫克KOH/克之酸值，此係經由KOH滴定所測定。測量鹼溶性樹脂酸值之方法之實例無特別限制，但例如以下方法可被使用。具有0.1 N之濃度之KOH溶液(溶劑：甲醇)被製備作為鹼溶液，及alpha-萘酚苯甲醇(pH：0.8至8.2黃色，10.0藍綠色)被製備作為指示劑。隨後，約1至2克之鹼溶性樹脂被收集作為樣本及溶解於50克之二甲基甲醯胺基(DMF)溶劑中，添加指示劑至其中及然後以鹼溶劑滴定。酸值之測定係依滴定完成時鹼溶劑之使用量，單位為毫克KOH/克。 　　[0072] 當鹼溶性樹脂之酸值被過度降低至低於50毫克KOH/克時，鹼溶性樹脂之顯影性質被降低，因此使得難以進行顯影方法。此外，當鹼溶性樹脂之酸值被過度增高至高於250毫克KOH/克時，由於極性增高，可發生與其他樹脂之相分離。 　　[0073] 用語“經取代”意指另一官能基被鍵結以代替化合物中之氫原子，且於羧酸化合物中胺基經取代之位置無限制，只要其為氫原子經取代之位置即可。欲經取代之胺基數目可為1或更高。 　　[0074] 經胺基取代之羧酸化合物之特定實例包含20種α-胺基酸、4-胺基丁酸、5-胺基戊酸、6-胺基己酸、7-胺基庚酸、8-胺基辛酸、4-胺基苯甲酸、4-胺苯基乙酸、4-胺基環己烷羧酸、及類似者，其已知為蛋白質之原料。 　　[0075] 再者，包含二或更多個胺基之多官能性胺化合物，可為於一分子中包含至少兩個胺基(-NH 2)之化合物，且其可包括所有之脂族、脂環族、及芳族多官能性胺，視與胺基鍵結之烴類型而定。可經由該包含至少兩個胺基之多官能性胺化合物而改進鹼溶性樹脂之可撓性、韌性、對銅箔之附著性等。 　　[0076] 包含二或更多個胺基之多官能性胺化合物之特定實例包括1,3-環己烷二胺、1,4-環己烷二胺、1,3-雙(胺甲基)-環己烷、1,4-雙(胺甲基)-環己烷、雙(胺甲基)-降莰烯、八氫-4,7-甲烷茚-1(2)、5(6)-二甲烷胺、4,4’-伸甲基雙(環己胺)、4,4’-伸甲基雙(2-甲基環己胺)、異佛酮二胺、1,3-苯二胺、1,4-苯二胺、2,5-二甲基-1,4-苯二胺、2,3,5,6-四甲基-1,4-苯二胺、2,4,5,6-四氟-1,3-苯二胺、2,3,5,6-四氟-1,4-苯二胺、4,6-二胺基間苯二酚、2,5-二胺基-1,4-苯二硫酚、3-胺苄基胺、4-胺苄基胺、間二甲苯二胺、對二甲苯二胺、1,5-二胺基萘、2,7-二胺基茀、2,6-二胺基蒽醌、間聯甲苯胺、鄰聯甲苯胺、3,3’,5,5’-四甲基聯苯胺(TMB)、鄰二甲氧苯胺、4,4’-伸甲基雙(2-氯苯胺)、3,3’-二胺基聯苯胺、2,2’-雙(三氟甲基)-聯苯胺、4,4’-二胺基八氟聯苯基、4,4’-二胺基-對三苯基、3,3’-二胺基二苯基甲烷、3,4’-二胺基二苯基甲烷、4,4’-二胺基二苯基甲烷、4,4’-二胺基-3,3’-二甲基二苯基甲烷、4,4’-伸甲基雙(2-乙基-6-甲基苯胺)、4,4’-伸甲基雙(2,6-二乙基苯胺)、3,3’-二胺基二苯基酮、4,4’-二胺基二苯基酮、4,4’-伸乙基二苯胺、4,4’-二胺基-2,2’-二甲基聯苄基、2,2’-雙(3-胺基-4-羥苯基)丙烷、2,2’-雙(3-胺苯基)-六氟丙烷、2,2’-雙(3-胺苯基)-六氟丙烷、2,2’-雙(3-胺基-4-甲基苯基)-六氟丙烷、2,2’-雙(3-胺基-4-羥苯基)-六氟丙烷、α,α’-雙(4-胺苯基)-1,4-二異丙基苯、1,3-雙[2-(4-胺苯基)-2-丙基]苯、1,1’-雙(4-胺苯基)-環己烷、9,9’-雙(4-胺苯基)-茀、9,9’-雙(4-胺基-3-氯苯基)茀、9,9’-雙(4-胺基-3-氟苯基)茀、9,9’-雙(4-胺基-3-甲基苯基)茀、3,4’-二胺基二苯基醚、4,4’-二胺基二苯基醚、1,3-雙(3-胺基苯氧基)-苯、1,3-雙(4-胺基苯氧基)-苯、1,4-雙(4-胺基苯氧基)-苯、1,4-雙(4-胺基-2-三氟甲基苯氧基)-苯、4,4’-雙(4-胺基苯氧基)-聯苯基、2,2’-雙[4-(4-胺基苯氧基)-苯基]丙烷、2,2’-雙[4-(4-胺基苯氧基)-苯基]六氟丙烷、硫化雙(2-胺苯基)、硫化雙(4-胺苯基)、雙(3-胺苯基)碸、雙(4-胺苯基)碸、雙(3-胺基-4-羥基)碸、雙[4-(3-胺基苯氧基)-苯基]碸、雙[4-(4-胺基苯氧基)-苯基]碸、鄰聯甲苯胺碸、3,6-二胺基咔唑、1,3,5-三(4-胺苯基)-苯、1,3-雙(3-胺基丙基)-四甲基二矽氧烷、4,4’-二胺基苯甲醯胺苯、2-(3-胺苯基)-5-胺基苯并咪唑、2-(4-胺苯基)-5-胺基苯并□唑、1-(4-胺苯基)-2,3-二氫-1,3,3-三甲基-1H-茚-5-胺、4,6-二胺基間苯二酚、2,3,5,6-吡啶四胺，多官能性胺，包含Shin-Etsu Silicone之矽氧烷結構(PAM-E、KF-8010、X-22-161A、X-22-161B、KF-8012、KF-8008、及X-22-1660B-3、X-22-9409)，多官能性胺，包含Dow Corning之矽氧烷結構(Dow Corning 3055)，多官能性胺，包含聚醚結構(Huntsman，BASF)，及類似者。 　　[0077] 再者，鹼溶性樹脂可包含至少一個以下化學式3代表之重複單元，及至少一個以下化學式4代表之重複單元。 [0078] 於化學式3中，R 2為一直接鍵、具有1至20個碳原子之伸烷基、具有1至20個碳原子之烯基、或具有6至20個碳原子之伸芳基，且“*”意指一鍵結點。 [0079] 於化學式4中，R 3為一直接鍵、具有1至20個碳原子之伸烷基、具有1至20個碳原子之烯基、或具有6至20個碳原子之伸芳基，R 4為-H、-OH、-NR 5R 6、鹵素、或具有1至20個碳原子之烷基，R 5及R 6可各自獨立為氫、具有1至20個碳原子之烷基、或具有6至20個碳原子之芳基，及“*”意指一鍵結點。 　　[0080] 較佳，於化學式3中，R 2可為伸苯基，且於化學式4中，R 3可為伸苯基及R 4可為-OH。 　　[0081] 同時，鹼溶性樹脂可再包含除了以化學式3代表之重複單元及以化學式4代表之重複單元之外之以乙烯基為主之重複單元。以乙烯基為主之重複單元為重複單元，包含於以乙烯基為主之單體之均聚物中，該單體於一分子中包含一或多個乙烯基，且以乙烯基為主之單體之實例無特別限制，且例如包括乙烯、丙烯、異丁烯、丁二烯、苯乙烯、丙烯酸、甲基丙烯酸、順丁烯二酐、順丁烯二醯亞胺、或類似者。 　　[0082] 包含至少一個以化學式3代表之重複單元及至少一個以化學式4代表之重複單元之鹼溶性樹脂，可經由使包含以下化學式5代表之重複單元之聚合物、以下化學式6代表之胺、及以下化學式7代表之胺反應，而被製造。 [0083] 於化學式5至7中，R 2至R 4為與上述化學式3與4中者相同，且“*”意指一鍵結點。 　　[0084] 包含以化學式5代表之重複單元聚合物之特定實例無特別限制，且例如包括SMA(Cray Valley)、Xiran(Polyscope)、Scripset(Solenis)、Isobam(Kuraray)、聚酐樹脂(Chevron Phillips Chemical Company)、Maldene(Lindau Chemicals)、及類似者。 　　[0085] 再者，可經由使以下化學式8代表之化合物與以下化學式9代表之化合物反應，而製造包含至少一個以化學式3代表之重複單元及至少一個以化學式4代表之重複單元之鹼溶性樹脂。 於化學式8及9中，R 2至R 4為與上述化學式3與4中者相同。 　　[0086] 再者，該鹼溶性樹脂可為已知習知之包含羧基之樹脂、或包含酚基之樹脂，其於其之分子中包含羧基或酚基。較佳，可使用包含羧基之樹脂、或包含羧基之樹脂與包含酚基之樹脂之混合物。 　　[0087] 包含羧基之樹脂之實例包含列於以下(1)至(7)中之樹脂。 　　[0088] (1)包含羧基之樹脂，其係經由使多官能性環氧樹脂與飽和或不飽和單羧酸反應、接著與多元酸酐反應而獲得， 　　(2)包含羧基之樹脂，其係經由使二官能性環氧樹脂與二官能性苯酚及(或)二羧酸反應、接著與多元酸酐反應而獲得， 　　(3)包含羧基之樹脂，其係經由使多官能性酚樹脂與於一分子中具有一環氧基之化合物反應、接著與多元酸酐反應而獲得， 　　(4)包含羧基之樹脂，其係經由使於一分子中具有二或更多個醇羥基之化合物與多元酸酐反應而獲得， 　　(5)經由使二胺與二酐反應而獲得的聚醯胺酸樹脂，或該聚醯胺酸樹脂之共聚物樹脂， 　　(6)與丙烯酸反應之聚丙烯酸樹脂，或該聚丙烯酸樹脂之共聚物，及 　　(7)經由以弱酸、二胺、咪唑、或二甲亞碸，但不限於彼，對與順丁烯二酐反應之順丁烯二酐樹脂、及順丁烯二酐共聚物之酐，進行開環所製備之樹脂。 　　[0089] 包含羧基之樹脂之更特定實例包括CCR-1291H(Nippon Kayaku)、SHA-1216CA60(Shin-A T&C)、Noverite K-700(Lubrizol)、或二或更多個彼之混合物。 　　[0090] 包含酚基之樹脂之實例無特別限制，但例如酚醛樹脂，例如苯酚醛樹脂、甲酚酚醛樹脂、雙酚F(BPF)酚醛樹脂、或以雙酚A為主之樹脂例如4,4’-(1-(4-(2-(4-羥苯基)丙烷-2-基)苯基)乙烷-1,1-二基)二苯酚，可被單獨或組合使用。 　　[0091] 聚合物樹脂層可再包括選自熱固化觸媒、無機填料、調平劑、分散劑、脫模劑、及金屬附著促進劑中之至少一個添加物。 　　[0092] 熱固化觸媒係用以促進可熱固化黏合劑之熱固化。熱固化觸媒之實例包含咪唑衍生物，例如咪唑、2-甲基咪唑、2-乙基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、4-苯基咪唑、1-氰乙基-2-苯基咪唑、及1-(2-氰乙基)-2-乙基-4-甲基咪唑；胺化合物，例如二雙氰胺、苄基二甲基胺、4-(二甲基胺基)-N,N-二甲基苄基胺、4-甲氧基-N,N-二甲基苄基胺、及4-甲基-N,N-二甲基苄基胺；聯胺化合物，例如己二酸二醯肼及癸二酸二醯肼；磷化合物例如三苯基膦；及類似者。市售產品之實例包括Shikoku Chemicals Corporation所製造之2MZ-A、2MZ-OK、2PHZ、2P4BHZ、及2P4MHZ(咪唑化合物之產品名稱)，U-CAT3503N及 UCAT3502T(二甲基胺之封閉型異氰酸化合物之產品名稱)，及San-Apro Ltd所製造之DBU、DBN、U-CATS A102、及U-CAT5002(二環狀脒化合物及其之鹽)。然而，熱固化觸媒不限制至這些，且亦可為用於環氧樹脂或氧環丁烷化合物之熱固化觸媒，或加速環氧基及╱或氧環丁烷基與羧基反應之化合物。這些觸媒可單獨或作為二或更多者之混合物被使用。再者，S-三□衍生物，例如胍胺、乙胍□、苯胍□、三聚氰胺、2,4-二胺基-6-甲基丙烯醯氧乙基-S-三□、2-乙烯基-4,6-二胺基-S-三□、2-乙烯基-4,6-二胺基-S-三□、2-乙烯基-4,6-二胺基-S-三□-異三聚氰酸加合物、2,4-二胺基-6-甲基丙烯醯氧乙基-S-三□-異三聚氰酸加合物等可被使用。較佳，與這些附著性賦予劑亦有相同功能之化合物，可被與熱固化觸媒組合使用。 　　[0093] 無機填料之實例包含二氧化矽、鋇硫酸、鈦酸鋇、滑石、黏土、鎂碳酸、鈣碳酸、氧化鋁、氫氧化鋁、雲母、或二或更多個彼之混合物。 　　[0094] 無機填料之含量無特別限制。然而，為了達成聚合物樹脂層之高剛性，以100 重量份之包含於聚合物樹脂層中之所有樹脂組分為基準，可以100重量份或更高、100重量份至600重量份、或100重量份至500重量份之量添加無機填料。 　　[0095] 脫模劑之實例包括聚烯烴蠟，例如低分子量聚丙烯及低分子量聚乙烯、酯蠟、棕櫚蠟、石蠟、及類似者。 　　[0096] 金屬附著性促進劑可為不使金屬材料產生表面劣化或透明性難題之材料，例如矽烷偶合劑、有機金屬偶合劑、或類似者。 　　[0097] 調平劑係用以移除在塗覆膜期間於表面上之爆裂或凹坑，且可使用例如得自BYK-Chemie GmbH之BYK-380N、BYK-307、BYK-378、及BYK-350、及類似者。 　　[0098] 再者，聚合物樹脂層亦可包括具有5000或更高分子量、能導致相分離之樹脂或彈性體。因而，聚合物樹脂層之經固化產物可受到粗糙化處理。測定具有5000 克/莫耳或更高分子量之樹脂或彈性體之分子量之方法之實例無特別限制，且例如其意指關於聚苯乙烯經由GPC(凝膠滲透層析法)測量之重量平均分子量。關於聚苯乙烯經由GPC測量之測定重量平均分子量之方法中，可使用一般已知之分析裝置、偵檢器，例如示差折射率偵檢器，及分析管柱。可使用關於溫度、溶劑、及流率之一般運用之條件。測量條件之特定實例包括30℃之溫度、氯仿溶劑、及1毫升/分鐘之流率。 　　[0099] 此外，為了賦予光可固化性質至聚合物樹脂層，聚合物樹脂層可再包括包含光反應性不飽和基之可熱固化黏合劑，或包含光反應性不飽和基之鹼溶性樹脂，及光引發劑。包含光反應性不飽和基之可熱固化黏合劑、或包含光反應性不飽和基之鹼溶性樹脂、及光引發劑之實例無特別限制，且可使用被使用於相關於光可固化樹脂組成物技術領域中之多種化合物而無特別限制。 　　[0100] 包含於聚合物樹脂層中光引發劑之含量可為0.01重量%或較低，以聚合物樹脂層之總重量為基準。敘述“包含於聚合物樹脂層中光引發劑之含量為0.01重量%或較低，以聚合物樹脂層之總重量為基準”，可意指包含於聚合物樹脂層中光引發劑之含量非常小，或無包括光引發劑。因而，可降低經由光引發劑而發生之絕緣層與導電層之界面分離，並且可改進絕緣層之附著性及耐久性。 　　[0101] 再者，用以製造實施例之絕緣層之方法，可包括一步驟，係形成圖形於聚合物樹脂層上同時保持具有金屬突出物形成於其表面上之半導體元件被密封之狀態。 　　[0102] 由於用以製造實施例之絕緣層之方法包括一步驟，係形成圖形於聚合物樹脂層上同時保持具有金屬突出物形成於其表面上之半導體元件被密封之狀態，可以形成高解析度細開口(通孔)而無對聚合物樹脂層之物理損害，無影響半導體元件。於以下敘述之用以製造多層印刷電路板之方法中，可以金屬填充微細開口(通孔)以作為在相對於絕緣層為下方基板與上方基板間之電路，因而改進多層結構電路板中之積體度。 　　[0103] 形成於聚合物樹脂層上之圖形意指開口部分被部分形成於聚合物樹脂層中的狀態。特定而言，由於圖形被形成於聚合物樹脂層上，於聚合物樹脂層下之基板層之部分表面可經由開口部分被曝露。亦即，形成圖形於聚合物樹脂層上同時保持具有金屬突出物形成於其表面上之半導體元件被密封之狀態之步驟可包含形成通孔於聚合物樹脂層上同時保持具有金屬突出物形成於其表面上之半導體元件被密封之狀態之步驟。 　　[0104] 於形成圖形於聚合物樹脂層上之步驟中，具有金屬突出物形成於其表面上之半導體元件可保持於密封狀態中。亦即，於部分形成開口部分於聚合物樹脂層中之方法中，在鄰近半導體元件位置之部分無開口被形成。因此，即使圖形被形成於聚合物樹脂層上，半導體元件及於表面上之金屬突出物保持其本身，而無物理或化學影響，及因此保持於密封狀態，其中所有表面與聚合物樹脂層接觸。 　　[0105] 另一方面，作為形成圖形於聚合物樹脂層上之方法之實例，化學蝕刻方法可被使用，其中圖形層被形成於聚合物樹脂層上，及使用圖形層作為蝕刻光罩圖形蝕刻聚合物樹脂層。亦即，形成圖形於聚合物樹脂層上之步驟，可包括形成圖形於聚合物樹脂層上、及對經由圖形層曝露之聚合物樹脂層以鹼顯影之步驟。於此情形中，可使用光敏性樹脂圖形層或金屬圖形層作為圖形層之實例。 　　[0106] 另一方面，於對由圖形層曝露之聚合物樹脂層以鹼顯影之步驟之後，以經由圖形層曝露之聚合物樹脂層之總重量為基準，可保留0.1重量%至85重量%、0.1重量%至50重量%、或0.1重量%至10重量%。此被認為係因為包含於聚合物樹脂層中之鹼溶性樹脂已被鹼性顯影劑移除，但保留而無移除具有很小鹼顯影性質之可熱固化黏合劑或無機填料。 　　[0107] 尤其，為了控制無機填料與可熱固化黏合劑保留之程度，可控制可熱固化黏合劑及無機填料相對於鹼溶性樹脂之重量比、於無機填料表面上酸官能基之比例、及類似者。較佳，以100重量份之鹼溶性樹脂為基準，可添加20重量份至100重量份之可熱固化黏合劑及100重量份至600重量份之無機填料。無機填料表面之酸值可於0毫克KOH/克至5毫克KOH/克，或0.01毫克KOH/克至5毫克KOH/克之範圍中。酸值之細節與測定鹼溶性樹脂之酸值之方法中者相同。 　　[0108] 以此方式，於對經由圖形層曝露之聚合物樹脂層以鹼顯影之步驟中，由於一些聚合物樹脂層保留而無被顯影，可以預防通孔由於移除聚合物樹脂圖形所致之擴大，而在隨後之移除圖形層之步驟期間，留存之聚合物樹脂層被移除，而非移除所需之聚合物樹脂圖形。 　　[0109] 當光敏性樹脂圖形層被使用作為聚合物樹脂層之光罩圖形時，於聚合物樹脂層上形成圖形之步驟可包括以下步驟：形成光敏性樹脂層於聚合物樹脂層上、及曝露及以鹼顯影光敏性樹脂層以形成光敏性樹脂圖形，且同時以鹼顯影經由光敏性樹脂圖形曝露之聚合物樹脂層。 　　[0110] 光敏性樹脂層可顯出光敏性及鹼溶性。因此，經由以光照射光敏性樹脂層之曝露方法可產生分子結構之變形，及樹脂層可經由接觸鹼性顯影劑之顯影方法被蝕刻或移除。 　　[0111] 因此，當光敏性樹脂層被選擇性地部分曝露及然後以鹼顯影時，曝露部分不被顯影，及只有未曝露部分可被選擇性蝕刻及移除。如上述，其保持完整而無被經由曝露以鹼顯影之一部分光敏性樹脂層，被稱為光敏性樹脂圖形。 　　[0112] 亦即，於曝露光敏性樹脂層之方法中，例如，曝露可為經由以下方法選擇性進行：與以預定圖形於光敏性樹脂層上形成之光罩接觸接著以紫外光照射之方法，經由投影物鏡成像包括於光罩中之預定圖形、接著以紫外光照射之方法，使用雷射二極體作為光源直接成像包括於光罩中之預定圖形、接著以紫外光照射之方法，或類似者。於此情形中，紫外光照射條件之實例可包括以5 mJ/cm 2至600 mJ/cm 2之光量照射。 　　[0113] 再者，可提及以鹼性顯影劑處理之方法作為於曝露光敏性樹脂層之後進行鹼性顯影之方法之實例。鹼性顯影劑之實例無特別限制，但例如鹼性水溶液，例如氫氧化鉀、氫氧化鈉、碳酸鈉、碳酸鉀、磷酸鈉、矽酸鈉、氨、氫氧化四甲基銨、胺、及類似者，可經由調整其之濃度及溫度而使用。市售之鹼性顯影劑亦可被使用。鹼性顯影劑之特定使用量無特別限制。然而，必須調整濃度及溫度以不損害光敏性樹脂圖形。例如，可使用於25℃至35℃之0.5至3%碳酸鈉水溶液。 　　[0114] 以光敏性樹脂圖形之總重量為基準，光敏性樹脂圖形之移除率可為0.01重量%或較低。敘述“以光敏性樹脂圖形之總重量為基準，光敏性樹脂圖形之移除率為0.01重量%或較低”可意指已被移除之光敏性樹脂圖形比率非常不顯著，或光敏性樹脂圖形完全不被移除。 　　[0115] 因此，光敏性樹脂層被曝露及以鹼顯影，以形成光敏性樹脂圖形，及同時經由光敏性樹脂圖形曝露之聚合物樹脂層可被以鹼顯影。如上述，光敏性樹脂層可經由利用光敏性被形成微細且均勻圖形，及經由一方法，其中只有一部分經由形成於光敏性樹脂層上之圖形曝露之聚合物樹脂層表面與鹼性顯影劑選擇性接觸，於取代習知之雷射蝕刻方法時可確保相當之準確程度及較高之方法經濟性。 　　[0116] 亦即，於以鹼顯影經由光敏性樹脂圖形曝露之聚合物樹脂層之步驟中，因為光敏性樹脂圖形不經由鹼性顯影劑移除，其以保持完整之狀態被使用作為光阻劑光罩，且鹼性顯影劑可經由光敏性樹脂圖形之開口部分與位於光敏性樹脂層下方部分之聚合物樹脂層接觸。於此情形中，由於聚合物樹脂層包括鹼溶性樹脂，其具有鹼溶性，因此其被鹼性顯影劑溶解。因此，與鹼顯影劑接觸之聚合物樹脂層部分可被溶解及移除。 　　[0117] 因此，經由光敏性樹脂圖形曝露之聚合物樹脂層，意指其之表面不與光敏性樹脂圖形接觸之聚合物樹脂層部分，且以鹼顯影經由光敏性樹脂圖形曝露之聚合物樹脂層之步驟可包括一步驟，其中於形成光敏性樹脂圖形時使用之鹼性顯影劑通過光敏性樹脂圖形及與下層之聚合物樹脂層接觸。 　　[0118] 經由以鹼顯影經由光敏性樹脂圖形曝露之聚合物樹脂層之步驟，可於聚合物樹脂層上形成與光敏性樹脂圖形具有相同形狀之聚合物樹脂圖形。保持完整而無被如同光敏性樹脂圖形以鹼顯影之部分聚合物樹脂層，可被稱為聚合物樹脂圖形。 　　[0119] 如上述，由於經由顯影光敏性樹脂層形成圖形及經由顯影聚合物樹脂層形成圖形為於一鹼性顯影劑中同時進行，可快速進行大量製造及因此方法之效率可被改進，且具有與形成於光敏性樹脂層上之微細圖形相同形狀之微細圖形，可經由化學方法被容易地導入聚合物樹脂層中。 　　[0120] 當金屬圖形層被使用作為聚合物樹脂層之光罩圖形時，於聚合物樹脂層上形成圖形之步驟可包括以下步驟：使於其之一表面附著有載體膜之金屬層之對立表面附著至聚合物樹脂層；於載體膜上形成圖形化光敏性樹脂層；移除經由該圖形化光敏性樹脂層曝露之載體膜及金屬層，以形成圖形化金屬層；由圖形化金屬層分離及移除載體膜；及以鹼顯影經由圖形化金屬層曝露之聚合物樹脂層。 　　[0121] 於使於其之一表面附著有載體膜之金屬層之對立表面附著至聚合物樹脂層之步驟中，使於其之一表面附著有載體膜之金屬層之對立表面附著至聚合物樹脂層之方法之實例，可包括於其之一表面附著有載體膜之金屬層之對立表面上塗覆一聚合物樹脂組成物、及乾燥該塗層之方法。 　　[0122] 形成圖形化光敏性樹脂層於載體膜上之步驟，可包括形成光敏性樹脂層於載體膜上、及曝露及以鹼顯影光敏性樹脂層之步驟。光敏性樹脂層及曝露及顯影之細節可包括上述被使用作為聚合物樹脂層之光罩圖形之光敏性樹脂圖形層者。 　　[0123] 於由移除經圖形化光敏性樹脂層曝露之載體膜及金屬層之步驟中，光敏性樹脂圖形被使用以作為光阻劑，用以形成圖形於載體膜及金屬層上。因此，經由光敏性樹脂層圖形曝露之載體膜及金屬層，意指其之表面不與光敏性樹脂層接觸之載體膜及金屬層部分。 　　[0124] 特定而言，移除經由光敏性樹脂層圖形曝露之載體膜及金屬層之步驟，可包括其中蝕刻劑通過有圖形形成於其上之光敏性樹脂層、及與載體膜及金屬層接觸之步驟。 　　[0125] 蝕刻劑可視載體膜及金屬層之種類而被選擇，且若可能，較佳為使用具有對下方銅線較少影響及不影響光敏性樹脂層之物質。 　　[0126] 由於較佳使用與金屬層相同之材料為作為載體膜之材料，載體膜及金屬層被經由相同蝕刻劑同時或依順序移除，及因此可容易地形成圖形。 　　[0127] 再者，於移除由圖形化光敏性樹脂層曝露之載體膜及金屬層以形成圖形化金屬層之步驟中，以聚合物樹脂層之總重量為基準，聚合物樹脂層之移除率可為0.01重量%或較低。敘述“以聚合物樹脂層之總重量為基準，聚合物樹脂層之移除率為0.01重量%或較低”可意指聚合物樹脂層已被移除之程度為非常不顯著，或聚合物樹脂層不被移除。 　　[0128] 亦即，於移除經由圖形化光敏性樹脂層曝露之載體膜及金屬層以形成圖形化金屬層之步驟中被使用之蝕刻劑，對聚合物樹脂層完全無物理及化學影響。因而，聚合物樹脂層可被安定地保持直到微細金屬圖形層被形成，及經由使用微細金屬圖形層作為光阻劑光罩以降低橫寬比，而可增高通孔之解析度。 　　[0129] 於如上述移除由圖形化光敏性樹脂層曝露之載體膜及金屬層以形成圖形化金屬層之步驟之後，圖形化金屬層、圖形化載體膜、及圖形化光敏性樹脂層可被依順序壓層於聚合物樹脂層上。 　　[0130] 於此情形中，為了形成絕緣層，除了聚合物樹脂層及形成於聚合物樹脂層上之圖形化金屬層之外，必須移除所有留存之層。為了此目的，傳統上，鹼性顯影劑被使用以移除用於形成圖形之光敏性樹脂層。於此情形中，一難題為鹼性顯影劑使得聚合物樹脂層同時或依順序顯影。此外，於使用金屬層用於形成圖形之情形中，因為使用蝕刻劑以移除金屬層，會發生例如下方銅線腐蝕之難題。 　　[0131] 另一方面，於一實施例之情形中，留存之層，除了聚合物樹脂層及形成於聚合物樹脂層上之圖形化金屬層之外，可經由一分離及移除載體膜及金屬層之簡單方法被容易地移除。 　　[0132] 於以上實施例中，因為在載體膜與金屬層間之附著力比在聚合物樹脂層與金屬層間之附著力小，可以預防在載體膜與金屬層之物理剝離期間聚合物樹脂層與金屬層之剝離。 　　[0133] 再者，於分離載體膜與金屬層之方法中，因為載體膜及形成於載體膜上之光敏性樹脂層以被附著或剝離之狀態被一起移除，即使無使用不同之蝕刻劑，只有微細金屬圖形光罩可容易留在聚合物樹脂層上，及因此經由以下敘述之形成圖形之方法，經由降低橫寬比可增高通孔之解析度。 　　[0134] 於以鹼顯影經由金屬圖形層曝露之聚合物樹脂層之步驟中，金屬圖形層被使用以作為用以形成圖形於聚合物樹脂層上之光阻劑。因此，經由金屬層圖形曝露之聚合物樹脂層意指聚合物樹脂層之部分，其之表面不與金屬層接觸。 　　[0135] 特定而言，以鹼顯影經由金屬層圖形曝露之聚合物樹脂層之步驟可包括一步驟，其中鹼性顯影劑通過具有圖形形成於其上之金屬層，及與聚合物樹脂層接觸。 　　[0136] 因為聚合物樹脂層包括鹼溶性樹脂，其具有鹼溶性，因此其被溶解於鹼性顯影劑中，故與鹼性顯影劑接觸之聚合物樹脂層部分可被溶解及移除。 　　[0137] 鹼性顯影劑之實例無特別限制，但例如鹼性水溶液，例如氫氧化鉀、氫氧化鈉、碳酸鈉、碳酸鉀、磷酸鈉、矽酸鈉、氨、氫氧化四甲基銨、胺、及類似者可被使用，及較佳可使用於30℃之1%碳酸鈉顯影劑。鹼性顯影劑之特定使用量無特別限制。 　　[0138] 於此情形中，當與鹼性顯影劑接觸時被溶解及移除之聚合物樹脂層之一部分可形成通孔，且於其中有圖形被形成之聚合物樹脂層中包括之通孔之平均直徑可為1微米至500微米，或100微米至300微米。 　　[0139] 再者，用以製造實施例之絕緣層之方法可包括首先固化聚合物樹脂層，其中有圖形被形成，之步驟。於固化聚合物樹脂層之步驟中，特定固化方法之實例無特別限制，且可使用任何熱固化或光固化方法而無限制。 　　[0140] 經由主要固化步驟，於聚合物樹脂層中可形成包括酯鍵之主鏈。形成酯鍵之實例包括光固化整體丙烯酸系樹脂，其中丙烯酸被形成酯鍵，或熱固化因而經由羧酸與環氧之反應形成酯鍵。 　　[0141] 於此情形中，特定熱固化條件不被限制，及可經由依照下述之聚合物樹脂層之蝕刻方法調整較佳條件以進行熱固化。例如，於經由以光阻劑剝離液體處理以蝕刻聚合物樹脂層之情形中，聚合物樹脂層之主要固化步驟可於50℃至150℃之溫度進行0.1小時至2小時。當聚合物樹脂層之熱固化溫度太低或熱固化時間被縮短時，聚合物樹脂層可被剝離液體過度損害。再者，當聚合物樹脂層之熱固化溫度為高或熱固化時間變成較長時，欲以剝離液體蝕刻聚合物樹脂層可為困難的。 　　[0142] 再者，用以製造實施例之絕緣層之方法，可包括以鹼性水溶液蝕刻經固化聚合物樹脂層表面以曝露金屬突出物之步驟。由於金屬突出物經由以鹼性水溶液蝕刻經固化聚合物樹脂層表面而被曝露，經由曝露之金屬突出物，電訊號可連接至密封在經固化聚合物樹脂層內之導體線路。 　　[0143] 可經由以鹼性水溶液蝕刻而進行金屬突出物之曝露。鹼性水溶液可具有10℃至100℃，或25℃至60℃之溫度，及1%至10%，或1%至5%之濃度，及更特定而言，可使用光阻劑剝離液體。鹼性水溶液可破壞於聚合物樹脂層中之酯鍵，其中經由首次固化形成包含酯鍵之主鏈，因而蝕刻掉聚合物樹脂層。此時，經由調整鹼性水溶液之濃度及溫度，可調整以鹼性水溶液蝕刻聚合物樹脂層之速率，且蝕刻速率可保持於上述範圍內之適當程度，因而調整聚合物樹脂層之厚度，同時確保方法效率。 　　[0144] 可使用金屬氫氧化物(例如氫氧化鉀或氫氧化鈉)之水溶液作為鹼性水溶液，及可使用市售之產品，例如Resistrip產品群(Atotech所製造)、ORC-731、ORC-723K、ORC-740、及SLF-6000(Orchem Corporation所製造)。 　　[0145] 可由經固化聚合物樹脂層之表面進行鹼性水溶液蝕刻。經固化聚合物樹脂層之表面意指一區域，其中密封具有金屬突出物形成於其表面上的導體線路之聚合物樹脂層係與空氣接觸。由於蝕刻由經固化聚合物樹脂層之表面進行至密封具有金屬突出物形成於其表面上的導體線路之聚合物樹脂層，因而可曝露金屬突出物。 　　[0146] 為了以鹼性水溶液進行由經固化聚合物樹脂層之表面蝕刻，以上鹼性水溶液可與經固化聚合物樹脂層之表面接觸。此時，為了確保經由均勻移除之厚度均勻性而無對聚合物樹脂層之物理損害，鹼性水溶液可經由例如噴塗之方法與聚合物樹脂層之表面接觸。 　　[0147] 在以鹼性水溶液蝕刻經固化聚合物樹脂層之表面以曝露金屬突出物之步驟之前，當需要時可進行移除留存於聚合物樹脂層上之圖形層之步驟。被用於光敏性樹脂圖形層或金屬圖形層之鹼性水溶液之實例無特別限制，只要光阻劑剝離液體可被處理，或可進行除膠渣方法、蝕刻方法、或類似者即可。經由使金屬層之銅箔極薄，於3微米或較低之厚度，可使用移除金屬層同時部分移除下方銅線之蝕刻劑，或移除金屬層但不影響下方銅線之蝕刻劑。然而，較佳為使用只選擇性移除圖形層且不影響下方聚合物樹脂層之方法。 　　[0148] 再者，用以製造實施例之絕緣層之方法可包含於曝露金屬突出物之狀態下，二次固化(secondarily curing)聚合物樹脂層之步驟。經由該二次固化步驟，可改進最終由該二次固化步驟製造之絕緣層之耐化學性。 　　[0149] 於此情形中，特定固化條件不被限制，且例如聚合物樹脂層之二次固化步驟可於150℃至250℃之溫度進行0.1小時至2小時。 　　[0150] 同時，依照本發明之另一實施例，可提供用以製造多層印刷電路板方法，包含形成金屬圖形層之步驟，其中於實施例中製造之絕緣層上形成圖形。 　　[0151] 本案發明人發現，當於一實施例中製造之絕緣層包含於其表面上有金屬突出物形成之半導體元件時，金屬突出物被曝露至絕緣層之外，且金屬圖形層為新壓層於絕緣層上，金屬圖形層可經由金屬突出物與絕緣層內之半導體元件傳遞及接收電訊號，因而完成本發明 　　[0152] 絕緣層可作為多層印刷電路板之層間絕緣材料，且可包含經鹼溶性樹脂與可熱固化黏合劑之固化產物，特別是可熱固化之材料或可光固化之材料。鹼溶性樹脂與可熱固化黏合劑之細節包括以上實施例中所述者。 　　[0153] 形成金屬圖形層於絕緣層上之步驟之更特定實例可包含以下步驟：於絕緣層上形成金屬薄膜；於金屬薄膜上形成光敏性樹脂層，於該光敏性樹脂層上有圖形形成；沉積金屬於經由光敏性樹脂層圖形曝露之金屬薄膜上；及移除光敏性樹脂層及經曝露之金屬薄膜。 　　[0154] 於形成金屬薄膜於絕緣層上之步驟中，形成金屬薄膜之方法之實例包含乾式沉積方法或濕式沉積方法，及乾式沉積方法之特定實例包括真空沉積、離子電鍍、濺鍍、及類似者。 　　[0155] 另一方面，可被提及之濕式沉積方法之特定實例為多種金屬之無電電鍍及類似者，及無電銅電鍍通常被使用。此外，於蒸氣沉積之前或之後可再包含粗糙化處理步驟。 　　[0156] 粗糙化處理方法可視條件而定為乾式及濕式方法。乾式方法之實例包括真空處理、大氣壓力處理、氣體電漿處理、氣體準分子UV處理、及類似者。濕式方法之實例包括除膠渣處理。經由這些粗糙化處理方法，可以增高金屬薄膜之表面粗糙度、及改進對沉積於金屬薄膜上之金屬之附著性。 　　[0157] 再者，形成金屬薄膜於絕緣層上之步驟可再包含在沉積金屬薄膜之前於絕緣層上形成表面處理層之步驟。因而，可改進在金屬薄膜與絕緣層間之附著性。 　　[0158] 特定而言，作為於絕緣層上形成表面處理層之方法之實例，選自經離子輔助反應之方法、離子束處理方法、及電漿處理方法中之至少一者可被使用。電漿處理方法可包括大氣電漿處理方法、DC電漿處理方法、及RF電漿處理方法中之任何一者。表面處理方法之結果為，包含反應性官能基之表面處理層可形成於絕緣層表面上。可被提及之於絕緣層上形成表面處理層之方法之另一實例為，於絕緣層表面上沉積厚度為50奈米至300奈米之鉻(Cr)及鈦(Ti)金屬之方法。 　　[0159] 同時，於金屬薄膜上形成有圖形形成於其中的光敏性樹脂層之步驟可包含曝露及顯影形成於金屬薄膜上之光敏性樹脂層之步驟。曝露及顯影光敏性樹脂層之細節可包含敘述於以上一實施例中者。 　　[0160] 尤其，較佳為形成欲被形成於金屬薄膜上之圖形，以使包括於圖形中之開口部分與曝露至絕緣層外之金屬突出物接觸。包含於以上圖形中之開口部分意指經由曝露及顯影光敏性樹脂層被移除之部分，且其相對應於一部分，其中藉由金屬蒸氣沉積而沉積金屬，其將被敘述於下，以形成金屬圖形層。因此，包括於圖形中之開口部分必須被形成以與曝露在絕緣層外之金屬突出物接觸。於此情形中，當金屬圖形層與金屬突出物接觸時，可以與在絕緣層內之導體線傳遞及接收電訊號。 　　[0161] 於沉積金屬於經由光敏性樹脂層圖形曝露之金屬薄膜上之步驟中，經由光敏性樹脂層圖形曝露之金屬薄膜意指不與表面上之光敏性樹脂層接觸之金屬薄膜部分。將被沉積之金屬可為銅。沉積方法之實例無特別限制，且多種被廣知之物理或化學蒸氣沉積方法可被使用而無限制。一般之實例為可使用銅電鍍方法。 　　[0162] 於此情形中，於經由光敏性樹脂層圖形曝露之金屬薄膜上沉積之金屬可形成上述之金屬圖形層，及更特定而言，可形成金屬圖形層以經由金屬突出物連接至半導體元件。因此，金屬圖形層可與包含於絕緣層中之半導體元件傳遞及接收電訊號。更特定而言，金屬突出物之一端與半導體元件接觸，及金屬突出物之另一端與金屬圖形層接觸，以電連接至半導體元件及金屬圖形層。 　　[0163] 於移除光敏性樹脂層且移除經曝露金屬薄膜之步驟中，可使用光阻劑剝離液體於移除光敏性樹脂層之方法之實例中，及可使用蝕刻劑於移除金屬薄膜之方法之實例中，該薄膜由於移除光敏性樹脂層而被曝露。 　　[0164] 製造多層印刷電路板之方法所製造之多層印刷電路板可再被使用作為增層材料。例如，可重複進行依照實施例之絕緣層之製造方法於多層印刷電路板上形成絕緣層之第一步驟，及依照另一實施例之多層印刷電路板之製造方法於絕緣層上形成金屬基板之第二步驟。 　　[0165] 因此，包括於以多層印刷電路板之製造方法所製造多層印刷電路板中所壓層之層數目無特別限制，且依照應用及用途之目的，其可具有例如一層或更多層，或一至二十層。 　　[0166] 形成金屬圖形層於絕緣層上之步驟可包含以金屬填充在絕緣層內之圖形中所包含之通孔。如上述，以上實施例製造之絕緣層包含具有通孔(開口)於其中之圖形。於形成金屬圖形層於絕緣層上之方法中，可以此金屬填充在絕緣層內之通孔(開口)。特定而言，於絕緣層上形成金屬薄膜之步驟中，可於絕緣層上形成金屬薄膜，絕緣層圍繞包含於絕緣層中及於下方基板之表面上之通孔(開口)。經由沉積金屬於金屬薄膜上之步驟，當金屬被沉積在通孔(開口)內時，可用金屬填充通孔(開口)。 　　[0167] 如上述經由以金屬填充細孔(通孔)，其可作為在相對於絕緣層之下方基板與上方基板間之電路，因而改進多層結構之電路板中之積體度。 　　[0168] 另一方面，於絕緣層上形成金屬圖形層之步驟之後，當需要時，可再包含移除形成於半導體元件下之基板之步驟。如上述，半導體元件可為形成於在下方部分之基板上之狀態存在，基板包括半導體材料，例如電路板、片、多層印刷線路板、或類似者。為了形成有較微細結構之多層電路板，當需要時，可移除半導體元件下方部分之基板，且基板以附著或黏合至聚合物樹脂層之狀態存在，及因此可被物理剝離出。 [有利的功效] 　　[0169] 依照本發明，可提供可以較快及較簡單方式製造之絕緣層之製造方法，其可改進方法效率、可容易調整絕緣層之厚度、且可形成高解析度通孔而無物理損害，及使用由該製造絕緣層之方法獲得之絕緣層製造多層印刷電路板之方法。 [Details of the Invention] [Technical Problem] [0007] An object of the present invention is to provide a method for manufacturing an insulating layer which can be manufactured in a quicker and simpler manner, which can improve the efficiency of the method and can easily adjust the insulating layer. The thickness is high and the high resolution through holes can be formed without physical damage. Another object of the present invention is to provide a method for manufacturing a multilayer printed circuit board using an insulating layer obtained by the method of manufacturing an insulating layer. [Technical Solution] [0009] An embodiment of the present invention provides a method for manufacturing an insulating layer, comprising the steps of sealing a semiconductor element with a polymer resin layer containing an alkali-soluble resin and a heat-curable adhesive, the semiconductor The element has a metal protrusion formed on a surface thereof; a pattern is formed on the polymer resin layer while maintaining a state in which the semiconductor element formed on the surface of the metal protrusion is sealed; the polymer resin is first cured a layer in which a pattern is formed; an surface of the cured polymer resin layer is etched with an alkaline aqueous solution to expose the metal protrusion; and the polymer resin is secondarily cured in a state where the metal protrusion is exposed Floor. [0010] Another embodiment of the present invention provides a method for fabricating a multilayer printed circuit board comprising the steps of forming a metal pattern layer on an insulating layer obtained by the method of fabricating an insulating layer. [0011] A method for fabricating an insulating layer and a method for fabricating a multilayer printed circuit board in accordance with certain embodiments of the present invention are described in more detail below. [0012] According to an embodiment of the present invention, there is provided a method for manufacturing an insulating layer, comprising the steps of sealing a semiconductor element with a polymer resin layer comprising an alkali-soluble resin and a heat-curable adhesive, the semiconductor element a metal protrusion formed on a surface thereof; forming a pattern on the polymer resin layer while maintaining a state in which a semiconductor element having a metal protrusion formed on a surface thereof is sealed; curing the polymer resin layer for the first time, wherein formation a pattern; etching the surface of the cured polymer resin layer with an alkaline aqueous solution to expose the metal protrusion; and secondarily curing the polymer resin layer in a state where the metal protrusion is exposed. [0013] The inventors of the present invention found through experiments that when the method of manufacturing an insulating layer of this embodiment is used, the metal protrusion sealed by the polymer resin layer is exposed through chemical etching using an alkaline aqueous solution, thereby preventing insulation The physical damage of the layer makes it easy to adjust the layer thickness to the desired range, and further improves the efficiency of the process, since the insulating layer can be manufactured in a relatively short time in a relatively easy manner. The present invention has been completed based on this finding. [0014] In particular, in the method of manufacturing an insulating layer according to an embodiment, the metal protrusion can be easily applied to the surface of the insulating layer by applying a polymer resin and a specific alkaline aqueous solution capable of stably etching the new component to an appropriate degree. It was exposed. Thus, the method has the advantage that multilayer printed circuit boards can be easily fabricated via exposed metal protrusions. [0015] Furthermore, the method for fabricating an insulating layer according to an embodiment includes a step of forming a pattern on a polymer resin layer while maintaining a state in which a semiconductor having a metal protrusion formed on a surface thereof The element is sealed to form a high-resolution fine opening (through hole) without physical damage to the polymer resin layer and does not affect the semiconductor element. In the method for manufacturing a multilayer printed circuit board described below, a fine opening (via) may be metal-filled as a circuit between the substrate and the upper substrate below the insulating layer, thereby being improved in the multilayer structure circuit board. The degree of integration. More particularly, the method for fabricating an insulating layer according to an embodiment may include the steps of sealing a semiconductor element with a polymer resin layer comprising an alkali-soluble resin and a heat-curable adhesive, the semiconductor element having a formation a metal protrusion on the surface thereof; forming a pattern on the polymer resin layer while maintaining a state in which the semiconductor element having the metal protrusion formed on the surface thereof is sealed; first curing the polymer resin layer, wherein a pattern is formed; The surface of the cured polymer resin layer is etched with an alkaline aqueous solution to expose the metal protrusions; and the polymer resin layer is secondarily cured in a state where the metal protrusions are exposed. [0017] First, in the step of sealing a semiconductor element having a metal protrusion formed on a surface thereof with an alkali-soluble resin and a heat-curable adhesive polymer resin layer, the semiconductor element may have a surface formed thereon Metal protrusions. An example of the method of forming the metal protrusion on the surface of the semiconductor element is not particularly limited, and for example, an electroplating method for the opening portion of the photosensitive resin layer pattern or an adhesion method using an adhesive can be used. [0018] As a specific example of the plating method for the opening portion of the photosensitive resin layer pattern, a method of forming a metal protrusion may be used, including laminating a photosensitive resin layer on a semiconductor element, forming a pattern on the photosensitive resin layer, And the steps of electroplating. More specifically, the photosensitive resin layer can exhibit photosensitivity and alkali solubility. Therefore, the molecular structure can be deformed by an exposure step of irradiating light onto the photosensitive resin layer, and the resin layer can be etched or removed via a developing step of contacting the alkali developing solution. [0020] Therefore, when a portion of the photosensitive resin layer is selectively exposed and then developed with alkali, the exposed portion is not developed, and only the unexposed portion can be selectively etched and removed. As described above, a part of the photosensitive resin layer remains intact without being developed with alkali via exposure, and is called a photosensitive resin pattern. [0021] That is, as an example of a method of exposing the photosensitive resin layer, the exposure may be selectively performed by bringing a photomask having a predetermined pattern into contact with the photosensitive resin layer and then irradiating the ultraviolet light, via the projection objective lens A method of imaging a predetermined pattern included in a reticle and then selectively illuminating the ultraviolet light, using a laser diode as a light source to directly image the pattern and then irradiating the ultraviolet light, or the like. At this time, examples of the conditions of ultraviolet light irradiation may include irradiation of 5 mJ/cm. 2 Up to 600 mJ/cm 2 The amount of light. Further, an example of a method of developing the photosensitive resin layer with alkali after exposure may include a method of treating with an alkali developer. Examples of the alkaline developer are not particularly limited, but, for example, an alkaline aqueous solution such as potassium hydroxide, sodium hydroxide, sodium carbonate, potassium carbonate, sodium phosphate, sodium citrate, ammonia, tetramethylammonium hydroxide, an amine, and the like It can be used by adjusting the concentration and temperature thereof, and an alkaline developer which is sold as a product can also be used. The specific use amount of the alkaline developer is not particularly limited, but the concentration and temperature must be adjusted so that the photosensitive resin pattern is not damaged. For example, a 0.5% to 3% aqueous sodium carbonate solution can be used at 25 ° C to 35 ° C. [0023] Meanwhile, in the electroplating step, examples of the electroplating method include a dry deposition method and a wet deposition method. Specific examples of the dry deposition method include vacuum vapor deposition, ion plating, sputtering, and the like. [0024] On the other hand, examples of specific wet deposition methods include electroless plating of various metals and the like, wherein electroless copper plating is common, and the roughening treatment method can be further included before or after vapor deposition. [0025] The roughening treatment method may be a dry or wet method depending on conditions. Examples of the dry method include vacuum treatment, atmospheric pressure treatment, gas plasma treatment, gas excimer UV treatment, and the like. Examples of wet methods include desmear treatment. Through these roughening treatment methods, the surface roughness of the metal thin film can be increased, and thus the adhesion to the metal deposited on the metal thin film can be improved. Further, in order to leave only the metal protrusions, the step of removing the photosensitive resin layer after the plating step may be further included. When the photosensitive resin pattern is removed, it is preferred to use a method capable of removing only the photosensitive resin layer without removing the lower semiconductor element and the metal protrusion as much as possible. [0027] A photoresist stripping liquid treatment, a desmear method, a plasma etching, or the like may be performed and any combination of these methods may be used as a specific example of the peeling method of the photosensitive resin pattern. [0028] On the other hand, it is possible to form a metal protrusion on the surface of a passive element (for example, MLCC) or an active element (for example, a semiconductor wafer), and then bond the opposite side of the metal protrusion formed by using an insulating adhesive or the like. The method to the surface of the semiconductor element is a specific example of a bonding method using an adhesive. At this time, the plating method for the opening portion of the photosensitive resin layer pattern can be used as it is as a method of forming a metal protrusion on the surface of the passive element or the active element. For example, a method in which a photosensitive resin layer pattern is formed on a surface of a passive element or an active element and then metal is plated in an opening portion of the pattern can be used. [0029] The polymer resin layer may have a thickness of 1 μm to 500 μm, 3 μm to 500 μm, 3 μm to 200 μm, 1 μm to 60 μm, or 5 μm to 30 μm, and the metal protrusion may have 1 μm To a height of 20 microns, and a cross-sectional diameter of 3 microns to 30 microns. The cross-sectional diameter may mean the diameter or the largest diameter of the cross section, wherein the metal protrusion is cut in a direction perpendicular to the height direction of the metal protrusion. For example, the shape of the metal protrusions may include a circular column, a conical frustum, a polygonal column, a polygonal frustum, an inverted frustum, an inverted polygonal frustum, or the like. Examples of the metal component included in the metal protrusion are also not particularly limited, and for example, a conductive metal such as copper and aluminum can be used. [0030] The semiconductor element having the metal protrusion formed on one surface thereof may be sealed with a polymer resin layer. More specifically, the semiconductor element may exist in a state of being formed on a substrate including a semiconductor material in a lower portion such as a circuit board such as a copper foil laminate, a sheet, a multilayer printed wiring board, and a germanium wafer. In order to form a semiconductor element on a substrate, a method of forming an adhesive layer and bonding a semiconductor element on a surface of the substrate, or forming an adhesive layer on the semiconductor element and bonding the semiconductor element to the substrate is not limited. [0031] Examples of the adhesive layer are not particularly limited, and various adhesive layers widely known in the field of semiconductor elements and electrical and electronic materials can be used without limitation. For example, a debondable temporary adhesive or a die attach film (DAF) can be used. In a state in which the semiconductor element exists on the substrate in this manner, the conductor line can be sealed by a method of forming a polymer resin layer on the substrate. [0032] Examples of the method for forming the polymer resin layer on the substrate are not particularly limited. However, for example, a method may be employed in which a polymer resin composition for forming a polymer resin layer may be directly coated on a substrate, or a polymer resin composition may be coated on a carrier film to form a polymer. The resin layer, and then the substrate and the polymer resin layer are laminated. [0033] Since the semiconductor element having the metal protrusion formed on one surface thereof is sealed with a polymer resin layer, the semiconductor element is configured so that all surfaces except the portion formed in contact with the lower portion substrate and the metal protrusion In addition to the portion of the contact, it may be in contact with the polymer resin layer. Further, all surfaces of the metal protrusions formed on the surface of the semiconductor element are also sealed by the polymer resin layer and may be in contact with the polymer resin layer. [0034] The polymer resin layer means a film formed by drying a polymer resin composition containing an alkali-soluble resin and a heat-curable adhesive. The polymer resin layer may comprise a heat-curable adhesive in an amount of 1 to 150 parts by weight, 10 to 100 parts by weight, or 20 to 50 parts by weight of the heat-curable adhesive relative to 100 parts by weight of the alkali-soluble resin. When the content of the heat-curable adhesive is too large, the developing property of the polymer resin layer is deteriorated and the strength can be lowered. Conversely, when the content of the heat-curable adhesive becomes too low, not only the polymer resin layer is excessively developed, but also the coating uniformity can be lowered. [0035] The heat-curable adhesive may include at least one functional group selected from the group consisting of a heat-curable functional group, an oxycyclobutane group, a cyclic ether group, a cyclic thioether group, a cyanide group, and a cis-butyl group. An enediminoimine group, a benzofluorenyl group, and an epoxy group. That is, the heat-curable adhesive must include an epoxy group, and may contain an oxygen-cyclobutane group, a cyclic ether group, a cyclic thioether group, a cyanide group, and a maleicene group in addition to the epoxy group. Imino group, benzoxanyl group, or a mixture of two or more of the others. The heat-curable adhesive can form a cross-linking bond with an alkali-soluble resin or the like via heat curing, thereby ensuring heat resistance or mechanical properties of the insulating layer. More specifically, a polyfunctional resin compound containing two or more of the above functional groups in one molecule can be used as a heat-curable adhesive. The polyfunctional resin compound may include a resin containing two or more cyclic ether groups and a hydrazine or a cyclic thioether group (hereinafter referred to as a cyclic (thio)ether group) in one molecule. [0038] The heat-curable adhesive containing two or more cyclic (thio)ether groups in one molecule may be a compound having two or more selected from 3, 4 or 5 in one molecule. Any one or two of a cyclic ether group or a cyclic thioether group. Examples of the compound having two or more cyclic thioether groups in one molecule include bisphenol A type episulfide resin YL 7000 manufactured by Japan Epoxy Resins Co., Ltd., and the like [ Further, the polyfunctional resin compound may comprise a polyfunctional epoxy compound containing two or more epoxy groups in one molecule, and at least two or more oxygen cyclobutane polyfunctional groups in one molecule. An oxycyclobutane compound, or an episulfide resin comprising at least two or more thioether groups, a polyfunctional cyanate compound containing at least two or more cyanide groups in one molecule, or A polyfunctional benzo- □ compound containing at least two or more benzo fluorenyl groups in one molecule, and the like. Specific examples of the polyfunctional epoxy compound may include an epoxy resin of a bisphenol A type, an epoxy resin of a hydrogenated bisphenol A type, an epoxy resin of a brominated bisphenol A type, and a ring of a bisphenol F type. Oxygen resin, bisphenol S type epoxy resin, phenolic type epoxy resin, novolac epoxy resin, methyl phenolic epoxy resin, N-epoxypropyl epoxy resin, bisphenol A phenolic epoxy resin, Dimethyl phenol epoxy resin, bisphenol epoxy resin, chelating epoxy resin, glyoxal epoxy resin, epoxy resin containing amine group, rubber modified epoxy resin, dicyclopentadiene phenol ring Oxygen resin, diepoxypropyl phthalate resin, heterocyclic epoxy resin, tetra-epoxypropyl xylyl ethane ethane resin, polyfluorene-modified epoxy resin, ε-caprolactone Modified epoxy resin, and the like. Further, in order to impart flame retardancy, a compound having a structure in which, for example, a phosphorus atom is introduced can be used. These epoxy resins can be improved in properties via thermal curing, such as adhesion of cured coated films, solder heat resistance, electroless plating resistance, and the like. Examples of the polyfunctional oxycyclobutane compound may include polyfunctional oxycyclobutane such as bis[(3-methyl-3-oxocyclobutane methoxy)methyl]ether, bis[ (3-ethyl-3-oxocyclobutanemethoxy)methyl]ether, 1,4-bis[(3-methyl-3-oxocyclobutanemethoxy)methyl]benzene, 1,4-bis[(3-ethyl-3-oxocyclobutanemethoxy)methyl]benzene, (3-methyl-3-oxocyclobutane)methyl acrylate, acrylic acid (3- Ethyl-3-oxocyclobutane)methyl ester, (3-methyl-3-oxocyclobutane)methyl methacrylate, methacrylic acid (3-ethyl-3-oxocyclobutane a methyl ester, an oligomer or copolymer thereof, and may additionally include an oxycyclobutanol and a hydroxyl group-containing resin such as a phenol resin, a poly(p-hydroxystyrene), a cardo-type bisphenol, An etherified product of calixarenes, resorcinol calixarenes, sesquioxanes, and the like. Further, a copolymer of an oxycyclobutane-unsaturated monomer and an alkyl (meth) acrylate may be included. Examples of the polyfunctional cyanate compound may include cyanate resin of bisphenol A type, cyanate resin of bisphenol E type, cyanate resin of bisphenol F type, cyanide of bisphenol S type Acid ester resin, bisphenol M type cyanate resin, phenolic type cyanate resin, phenolic type cyanate resin, cresol novolac type cyanate resin, phenolic type bisphenol A cyanate A resin, a bisphenol type cyanate resin, an oligomer or copolymer thereof, and the like. Examples of the polyfunctional maleimide compound may include 4,4'-diphenylmethane bismaleimide, phenylmethane bismaleimide, m-phenylmethane bismale Lysinamine, bisphenol A diphenyl ether bismaleimide, 3,3'-dimethyl-5,5'-diethyl-4,4'-diphenylmethane double Malaya Indoleamine, 4-methyl-1,3-phenylene bismaleimide, 1,6'-bismaleimide-(2,2,4-trimethyl)hexane, and Similar. [0045] Examples of the polyfunctional benzo- □ compound may include a bisphenol A type benzo □ resin, a bisphenol F type benzo □ resin, a phenolphthalein type benzo □ resin, and a thiophenol type. Benzo- □ resin, dicyclopentadiene type benzo- □ resin, 3,3-(methyl-1,4-diphenyl) bis(3,4-dihydro-2H-1 , 3-benzo- □) resin, and the like. More specific examples of the polyfunctional resin compound may include YDCN-500-80P (Kukdo Chemical Co. Ltd.), a phenolic type cyanide ester resin PT-30S (Lonza Ltd.), and a phenylmethane type. Maleimide resin BMI-2300 (Daiwa Kasei Co., Ltd.), Pd type benzoxyl resin (Shikoku Chemicals), and the like. Meanwhile, the alkali-soluble resin may include two or more acid functional groups, and two or more amine-substituted cyclic quinone imine functional groups. Examples of the acid functional group are not particularly limited, but include a carboxyl group or a phenol group. The alkali-soluble resin includes at least two or more acid functional groups, so that the polymer resin layer exhibits high alkali developing properties, and the development rate of the polymer resin layer can be controlled. The amine-substituted cyclic quinone imine functional group-based structure includes an amine group and a cyclic quinone imine group, and may include at least two or more thereof. Since the alkali-soluble resin contains at least two or more amine-substituted cyclic quinone imine functional groups, the alkali-soluble resin has a structure in which a large number of active hydrogens contained in the amine group are present. Therefore, when the reactivity to the heat-curable adhesive is increased during heat curing, the curing density can be increased, thereby improving heat resistance reliability and mechanical properties. Further, since a plurality of cyclic quinone imine functional groups are present in the alkali-soluble resin, the polarity is increased by the carbonyl group and the tertiary amino group contained in the cyclic quinone imine functional group, so the interface of the alkali-soluble resin Adhesion can be increased. Therefore, the polymer resin layer containing the alkali-soluble resin can have an increased interfacial adhesion to the metal layer laminated on the upper layer. More specifically, the amino group-substituted cyclic quinone imine functional group may include a functional group represented by the following Chemical Formula 1. In Chemical Formula 1, R 1 It is an alkyl or alkenyl group having 1 to 10 carbon atoms, 1 to 5 carbon atoms, or 1 to 3 carbon atoms, and "*" means a bond site. An alkyl group is a divalent functional group derived from an alkane such as a linear, branched, or cyclic group, and includes a methyl group, a methyl group, a propyl group, an isobutyl group, a secondary butyl group, Tertiary butyl, pentyl, hexyl, and the like. One or more hydrogen atoms contained in the alkylene group may be substituted with another substituent, and examples of the other substituents include an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, Alkynyl group having 2 to 10 carbon atoms, aryl group having 6 to 12 carbon atoms, heteroaryl group having 2 to 12 carbon atoms, aralkyl group having 6 to 12 carbon atoms, halogen atom, cyanogen Alkyl, an amine group, a decyl group, a nitro group, a decylamino group, a carbonyl group, a hydroxyl group, a sulfonyl group, an aminocarboxylic acid group, an alkoxy group having 1 to 10 carbon atoms, and the like. The term "substituted" as used herein means another functional group that is bonded to replace a hydrogen atom in a compound, and the position of the substitution is not limited as long as it is a position at which a hydrogen atom is substituted. That is, where the substituent is the position of the replaceable. When two or more substituents are substituted, the two or more substituents may be the same or different from each other. Alkenyl means that the above alkylene group contains at least one carbon-carbon double bond in the middle or at the end thereof, and examples thereof include an exoethyl group, a propyl group, a butyl group, a hexyl group, an exoethyl group, And similar. One or more hydrogen atoms in the alkenyl group may be substituted with a substituent in the same manner as the alkylene group. Preferably, the amino group-substituted cyclic quinone imine functional group may be a functional group represented by the following Chemical Formula 2. In Chemical Formula 2, "*" means a one-click node. [0055] As described above, the alkali-soluble resin includes an amine-substituted cyclic quinone imine functional group together with an acid functional group. In particular, the acid functional group can be bonded to at least one end of the amine-substituted cyclic quinone imine functional group. At this time, the amino group-substituted cyclic quinone imine functional group and the acid functional group may be bonded via a substituted or unsubstituted alkylene group or a substituted or unsubstituted extended aryl group. For example, an acid functional group may be bonded to an amine end group contained in an amino group-substituted quinone imine group via a substituted or unsubstituted alkylene group, or a substituted or unsubstituted extended aryl group. . The acid functional group may be bonded to the cyclic quinone imine contained in the amino group-substituted quinone imine functional group via a substituted or unsubstituted alkylene group, or a substituted or unsubstituted extended aryl group. Functional end. More specifically, the amine terminal contained in the amino group-substituted cyclic quinone imine functional group means a nitrogen atom contained in the amine group of Chemical Formula 1, and is contained in the ring substituted with an amine group. The terminus terminal of the quinone imine in the functional group of the quinone imine means the nitrogen atom contained in the cyclic quinone imine functional group of Chemical Formula 1. The alkylene group is a divalent functional group derived from an alkane such as a linear, branched, or cyclic group, and includes a methyl group, an extended ethyl group, a propyl group, an isobutyl group, and a secondary extension. Butyl, tertiary butyl, pentyl, hexyl, and the like. One or more hydrogen atoms contained in the alkylene group may be substituted with another substituent, and examples of the substituent include an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and Alkynyl group of 2 to 10 carbon atoms, aryl group having 6 to 12 carbon atoms, heteroaryl group having 2 to 12 carbon atoms, aralkyl group having 6 to 12 carbon atoms, halogen atom, cyano group And an amine group, a mercapto group, a nitro group, a decylamino group, a carbonyl group, a hydroxyl group, a sulfonyl group, an aminocarboxylic acid group, an alkoxy group having 1 to 10 carbon atoms, and the like. The aryl group means a divalent functional group derived from an aromatic hydrocarbon such as a cyclic group, and may include a phenyl group, a naphthyl group, or the like. One or more hydrogen atoms contained in the extended aryl group may be substituted with another substituent. Examples of the substituent include an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, an aryl group having 6 to 12 carbon atoms, and a heteroaryl group of 2 to 12 carbon atoms, an aralkyl group having 6 to 12 carbon atoms, a halogen atom, a cyano group, an amine group, a decyl group, a nitro group, a decylamino group, a carbonyl group, a hydroxyl group, a sulfonyl group A urethane group, an alkoxy group having 1 to 10 carbon atoms, and the like. The example of the method for producing the alkali-soluble resin is not particularly limited, but, for example, an alkali-soluble resin can be produced by a reaction of a cyclic unsaturated quinone imine compound with an amine compound. In this case, at least one of the cyclic unsaturated quinone imine compound and the amine compound contains an acid functional group substituted at the terminal thereof. That is, the acid functional group may be substituted at the terminal of the cyclic unsaturated quinone imine compound, the amine compound, or both of the two compounds. The details of the acid functional group are as described above. The cyclic quinone imine compound is a compound containing the above cyclic quinone imine functional group, and the cyclic unsaturated quinone imine compound means at least one unsaturated bond in the cyclic quinone imine compound (ie, A compound of double or triple bond). The alkali-soluble resin can be produced by a reaction of an amine group contained in the amine compound with a double bond or a triple bond contained in the cyclic unsaturated quinone imine compound. The weight ratio of the cyclic unsaturated quinone imine compound to the amine compound is not particularly limited, but may be, for example, 10 to 80 based on 100 parts by weight of the cyclic unsaturated quinone compound. The amine compound is reacted in parts by weight, or in an amount of from 30 to 60 parts by weight. Examples of the cyclic unsaturated quinone imine compound include an N-substituted maleimide compound. The term "N-substituted" means that a functional group is bonded to a nitrogen atom contained in a maleimide compound in place of a hydrogen atom, and an N-substituted maleimide compound can be classified. Monofunctional N-substituted maleimide compound and polyfunctional N-substituted maleimide compound, depending on the number of N-substituted maleimide compounds . [0064] A monofunctional N-substituted maleimide compound is a compound in which a nitrogen atom contained in a maleimide compound is substituted with a functional group, and a polyfunctional N-substituted The maleimide compound is a compound in which a nitrogen atom contained in each of two or more maleimide compounds is bonded via a functional group. [0065] In the monofunctional N-substituted maleimide compound, the functional group substituted on the nitrogen atom contained in the maleimide compound may include, but is not limited to, various known lipids. The family, alicyclic, or aromatic functional group, and the functional group substituted on the nitrogen atom may include a functional group in which the aliphatic, alicyclic, or aromatic functional group is substituted with an acidic functional group. The details of the acid functional group are as described above. Specific examples of the monofunctional N-substituted maleimide compound include o-methylphenyl maleimide, p-hydroxyphenyl maleimide, p-carboxybenzene A cis-butenylene imine, a dodecyl-s-butyleneimine, or the like. [0067] in the polyfunctional N-substituted maleimide compound, contained in each of two or more maleimide compounds, between nitrogen-nitrogen bonds Functional groups can include, but are not limited to, a variety of known aliphatic, alicyclic, or aromatic functional groups. In a particular embodiment, 4,4'-diphenylmethane functional groups and the like can be used. The functional group substituted on the nitrogen atom may include a functional group in which an aliphatic, alicyclic, or aromatic functional group is substituted with an acid functional group. The details of the acid functional group are as described above. Specific examples of the polyfunctional N-substituted maleimide compound include 4,4'-diphenylmethane bismaleimide (BMI-1000, BMI-1100, etc., available from Daiwakasei Industry Co., Ltd.), phenylmethane bismaleide, m-phenylmethane bismaleimide, bisphenol A diphenyl ether bismaleimide, 3,3'- Dimethyl-5,5'-diethyl-4,4'-diphenylmethane bismaleimide, 4-methyl-1,3-phenylene bismaleimide, 1, 6'-Bismaleimide-(2,2,4-trimethyl)hexane, and the like. The amine compound may be a primary amine compound comprising at least one amine group (-NH) 2 ) in the molecular structure. More preferably, an amino group-substituted carboxylic acid compound, a polyfunctional amine compound containing at least two amine groups, or a mixture thereof may be used. [0070] In the amino group-substituted carboxylic acid compound, the carboxylic acid compound is a compound containing a carboxylic acid (-COOH) function based on a molecule, and it may include all aliphatic, alicyclic, and aromatic carboxylic acids. The acid depends on the hydrocarbon species bonded to the carboxylic acid functional group. Since there are many carboxylic acid functional groups which are acid functional groups, the carboxylic acid compound substituted with an amino group is contained in the alkali-soluble resin, whereby the developing property of the alkali-soluble resin can be improved. Specifically, the alkali-soluble resin produced by the reaction of the amino group-substituted carboxylic acid compound and the cyclic unsaturated quinone imine compound may have 50 mgKOH/g to 250 mgKOH/g, or 70 The acid value is from KOH KOH/g to 200 mg KOH/g, which is determined by KOH titration. An example of the method of measuring the acid value of the alkali-soluble resin is not particularly limited, but for example, the following method can be used. A KOH solution (solvent: methanol) having a concentration of 0.1 N was prepared as an alkali solution, and alpha-naphthol benzyl alcohol (pH: 0.8 to 8.2 yellow, 10.0 cyan) was prepared as an indicator. Subsequently, about 1 to 2 grams of the alkali-soluble resin was collected as a sample and dissolved in 50 g of a dimethylformamido (DMF) solvent, an indicator was added thereto, and then titrated with an alkali solvent. The acid value is determined by the amount of the alkali solvent used in the completion of the titration, and the unit is mg KOH/g. When the acid value of the alkali-soluble resin is excessively lowered to less than 50 mgKOH/g, the developing property of the alkali-soluble resin is lowered, thus making it difficult to carry out the developing method. Further, when the acid value of the alkali-soluble resin is excessively increased to more than 250 mgKOH/g, phase separation from other resins may occur due to an increase in polarity. The phrase "substituted" means that another functional group is bonded in place of the hydrogen atom in the compound, and the position at which the amine group is substituted in the carboxylic acid compound is not limited as long as it is a position at which the hydrogen atom is substituted. can. The number of amine groups to be substituted may be 1 or higher. Specific examples of the amino group-substituted carboxylic acid compound include 20 kinds of α-amino acid, 4-aminobutyric acid, 5-aminopentanoic acid, 6-aminohexanoic acid, and 7-aminoheptanoic acid. , 8-aminooctanoic acid, 4-aminobenzoic acid, 4-aminophenylacetic acid, 4-aminocyclohexanecarboxylic acid, and the like, which are known as raw materials for proteins. Further, the polyfunctional amine compound containing two or more amine groups may contain at least two amine groups (-NH) in one molecule. 2 a compound, and which may include all aliphatic, cycloaliphatic, and aromatic polyfunctional amines, depending on the type of hydrocarbon to which the amine linkage is attached. The flexibility, toughness, adhesion to copper foil, and the like of the alkali-soluble resin can be improved by the polyfunctional amine compound containing at least two amine groups. Specific examples of the polyfunctional amine compound containing two or more amine groups include 1,3-cyclohexanediamine, 1,4-cyclohexanediamine, and 1,3-bis(aminomethyl) )-cyclohexane, 1,4-bis(aminomethyl)-cyclohexane, bis(aminomethyl)-norbornene, octahydro-4,7-methane oxime-1(2), 5(6) )-dimethaneamine, 4,4'-methyl bis(cyclohexylamine), 4,4'-methyl bis(2-methylcyclohexylamine), isophorone diamine, 1,3- Phenylenediamine, 1,4-phenylenediamine, 2,5-dimethyl-1,4-phenylenediamine, 2,3,5,6-tetramethyl-1,4-phenylenediamine, 2, 4,5,6-tetrafluoro-1,3-phenylenediamine, 2,3,5,6-tetrafluoro-1,4-phenylenediamine, 4,6-diaminoresorcinol, 2, 5-diamino-1,4-benzenedithiol, 3-aminobenzylamine, 4-aminebenzylamine, m-xylylenediamine, p-xylenediamine, 1,5-diaminonaphthalene, 2,7-Diaminoguanidine, 2,6-diaminoguanidine, m-toluidine, o-toluidine, 3,3',5,5'-tetramethylbenzidine (TMB), o-di Methoxyaniline, 4,4'-extended methyl bis(2-chloroaniline), 3,3'-diaminobenzidine, 2,2'-bis(trifluoromethyl)-benzidine, 4,4 '-Diamino octafluorobiphenyl, 4,4'-diamino-p-triphenyl, 3,3'-diaminodiphenylmethane, 3,4'-diamine Diphenylmethane, 4,4'-diaminodiphenylmethane, 4,4'-diamino-3,3'-dimethyldiphenylmethane, 4,4'-extended methyl bis ( 2-ethyl-6-methylaniline), 4,4'-methyl bis(2,6-diethylaniline), 3,3'-diaminodiphenyl ketone, 4,4'- Diaminodiphenyl ketone, 4,4'-extended ethyldiphenylamine, 4,4'-diamino-2,2'-dimethylbibenzyl, 2,2'-bis(3-amine 4-hydroxyphenyl)propane, 2,2'-bis(3-aminophenyl)-hexafluoropropane, 2,2'-bis(3-aminophenyl)-hexafluoropropane, 2,2' - bis(3-amino-4-methylphenyl)-hexafluoropropane, 2,2'-bis(3-amino-4-hydroxyphenyl)-hexafluoropropane, α,α'-double ( 4-aminophenyl)-1,4-diisopropylbenzene, 1,3-bis[2-(4-aminophenyl)-2-propyl]benzene, 1,1'-bis(4-amine Phenyl)-cyclohexane, 9,9'-bis(4-aminophenyl)-indole, 9,9'-bis(4-amino-3-chlorophenyl)anthracene, 9,9'-double (4-Amino-3-fluorophenyl)indole, 9,9'-bis(4-amino-3-methylphenyl)anthracene, 3,4'-diaminodiphenyl ether, 4, 4'-Diaminodiphenyl ether, 1,3-bis(3-aminophenoxy)-benzene, 1,3-bis(4-aminophenoxy)-benzene, 1,4-double (4-Aminophenoxy)-benzene, 1,4-bis(4-amino-2-trifluoromethylphenoxy)-benzene, 4,4'-bis(4-aminobenzene Oxy)-biphenyl, 2,2'-bis[4-(4-aminophenoxy)-phenyl]propane, 2,2'-bis[4-(4-aminophenoxy) -phenyl]hexafluoropropane, bis(2-aminophenyl) sulfide, bis(4-aminophenyl) sulfide, bis(3-aminophenyl)anthracene, bis(4-aminophenyl)anthracene, bis( 3-amino-4-hydroxy)indole, bis[4-(3-aminophenoxy)-phenyl]indole, bis[4-(4-aminophenoxy)-phenyl]indole, adjacent Toluidine oxime, 3,6-diaminocarbazole, 1,3,5-tris(4-aminophenyl)-benzene, 1,3-bis(3-aminopropyl)-tetramethyl Oxane, 4,4'-diaminobenzimidamide, 2-(3-aminophenyl)-5-aminobenzimidazole, 2-(4-aminophenyl)-5-amino Benzooxazole, 1-(4-aminophenyl)-2,3-dihydro-1,3,3-trimethyl-1H-indole-5-amine, 4,6-diaminoisophthalic acid Phenol, 2,3,5,6-pyridiniumtetramine, polyfunctional amine, including the structure of Shin-Etsu Silicone oxime (PAM-E, KF-8010, X-22-161A, X-22-161B, KF-8012, KF-8008, and X-22-1660B-3, X-22-9409), a polyfunctional amine containing Dow Corning's decane structure (Dow Corning 3055), a polyfunctional amine, including poly Ether structure (Huntsman, BASF), and the like. Further, the alkali-soluble resin may contain at least one repeating unit represented by the following Chemical Formula 3, and at least one repeating unit represented by the following Chemical Formula 4. [0078] In Chemical Formula 3, R 2 Is a direct bond, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, or an extended aryl group having 6 to 20 carbon atoms, and "*" means a bond point. [0079] In Chemical Formula 4, R 3 a direct bond, an alkylene group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, or an extended aryl group having 6 to 20 carbon atoms, R 4 For -H, -OH, -NR 5 R 6 , halogen, or an alkyl group having 1 to 20 carbon atoms, R 5 And R 6 Each may independently be hydrogen, an alkyl group having 1 to 20 carbon atoms, or an aryl group having 6 to 20 carbon atoms, and "*" means a bond site. [0080] Preferably, in Chemical Formula 3, R 2 Can be a phenyl group, and in the chemical formula 4, R 3 Can be extended phenyl and R 4 Can be -OH. Meanwhile, the alkali-soluble resin may further contain a vinyl-based repeating unit other than the repeating unit represented by Chemical Formula 3 and the repeating unit represented by Chemical Formula 4. The vinyl-based repeating unit is a repeating unit and is contained in a homopolymer of a vinyl-based monomer which contains one or more vinyl groups in one molecule and is mainly composed of a vinyl group. Examples of the monomer are not particularly limited, and include, for example, ethylene, propylene, isobutylene, butadiene, styrene, acrylic acid, methacrylic acid, maleic anhydride, maleimide, or the like. An alkali-soluble resin comprising at least one repeating unit represented by Chemical Formula 3 and at least one repeating unit represented by Chemical Formula 4, which can be obtained by a polymer comprising a repeating unit represented by the following Chemical Formula 5, an amine represented by the following Chemical Formula 6, It is produced by reacting with an amine represented by the following Chemical Formula 7. In Chemical Formulas 5 to 7, R 2 To R 4 It is the same as those in the above Chemical Formulas 3 and 4, and "*" means a one-bonded node. Specific examples of the repeating unit polymer represented by Chemical Formula 5 are not particularly limited, and include, for example, SMA (Cray Valley), Xiran (Polyscope), Scripset (Solenis), Isobam (Kuraray), and polyanhydride resin (Chevron Phillips). Chemical Company), Maldene (Lindau Chemicals), and the like. Further, an alkali-soluble resin containing at least one repeating unit represented by Chemical Formula 3 and at least one repeating unit represented by Chemical Formula 4 may be produced by reacting a compound represented by the following Chemical Formula 8 with a compound represented by the following Chemical Formula 9 . In Chemical Formulas 8 and 9, R 2 To R 4 It is the same as those in the above Chemical Formulas 3 and 4. Further, the alkali-soluble resin may be a conventionally known resin containing a carboxyl group or a resin containing a phenol group, which contains a carboxyl group or a phenol group in the molecule thereof. Preferably, a resin containing a carboxyl group or a mixture of a resin containing a carboxyl group and a resin containing a phenol group can be used. Examples of the resin containing a carboxyl group include the resins listed in the following (1) to (7). (1) a resin containing a carboxyl group obtained by reacting a polyfunctional epoxy resin with a saturated or unsaturated monocarboxylic acid, followed by reaction with a polybasic acid anhydride, and (2) a resin containing a carboxyl group, which is via A difunctional epoxy resin is obtained by reacting a difunctional phenol and/or a dicarboxylic acid with a polybasic acid anhydride, and (3) a resin containing a carboxyl group by reacting a polyfunctional phenol resin with a molecule. A reaction in which a compound having an epoxy group is reacted, followed by reaction with a polybasic acid anhydride, and (4) a resin containing a carboxyl group, which is obtained by reacting a compound having two or more alcoholic hydroxyl groups in one molecule with a polybasic acid anhydride. (5) a polyamic acid resin obtained by reacting a diamine with a dianhydride, or a copolymer resin of the polyaminic acid resin, (6) a polyacrylic resin reactive with acrylic acid, or a polyacrylic resin a copolymer, and (7) copolymerized with maleic anhydride resin and maleic anhydride reacted with maleic anhydride via a weak acid, a diamine, an imidazole, or a dimethyl hydrazine, but not limited thereto An anhydride, a tree prepared by ring opening . More specific examples of the resin containing a carboxyl group include CCR-1291H (Nippon Kayaku), SHA-1216CA60 (Shin-A T&C), Noverite K-700 (Lubrizol), or a mixture of two or more. The example of the resin containing a phenol group is not particularly limited, but for example, a phenol resin such as a phenol resin, a cresol novolak resin, a bisphenol F (BPF) phenol resin, or a resin mainly composed of bisphenol A, for example, 4 4'-(1-(4-(2-(4-Hydroxyphenyl)propan-2-yl)phenyl)ethane-1,1-diyl)diphenol can be used singly or in combination. [0091] The polymer resin layer may further include at least one additive selected from the group consisting of a heat curing catalyst, an inorganic filler, a leveling agent, a dispersing agent, a releasing agent, and a metal adhesion promoter. [0092] A heat curing catalyst is used to promote thermal curing of the heat curable adhesive. Examples of the heat curing catalyst include imidazole derivatives such as imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 4-phenylimidazole, 1 - cyanoethyl-2-phenylimidazole, and 1-(2-cyanoethyl)-2-ethyl-4-methylimidazole; amine compounds such as di-cyanide, benzyldimethylamine, 4 -(dimethylamino)-N,N-dimethylbenzylamine, 4-methoxy-N,N-dimethylbenzylamine, and 4-methyl-N,N-dimethyl Benzylamine; a hydrazine compound such as dioxonium adipate and diterpene sebacate; a phosphorus compound such as triphenylphosphine; and the like. Examples of commercially available products include 2MZ-A, 2MZ-OK, 2PHZ, 2P4BHZ, and 2P4MHZ (product name of imidazole compound) manufactured by Shikoku Chemicals Corporation, U-CAT3503N and UCAT3502T (closed isocyanic acid of dimethylamine) The product name of the compound), and DBU, DBN, U-CATS A102, and U-CAT5002 (dicyclic guanidine compound and salts thereof) manufactured by San-Apro Ltd. However, the heat curing catalyst is not limited to these, and may also be a heat curing catalyst for an epoxy resin or an oxycyclobutane compound, or a compound which accelerates the reaction of an epoxy group and a hydrazine or an oxocyclobutane group with a carboxyl group. . These catalysts can be used singly or as a mixture of two or more. Further, S-trivalent derivatives such as decylamine, ethyl hydrazine, benzoquinone, melamine, 2,4-diamino-6-methylpropenyloxyethyl-S-tris, 2-ethylene 4--4,6-diamino-S-tris, 2-vinyl-4,6-diamino-S-tris, 2-vinyl-4,6-diamino-S-tris An isocyano cyanate adduct, a 2,4-diamino-6-methylpropenyloxyethyl-S-tris-isocyanuric acid adduct or the like can be used. Preferably, the compound having the same function as those of the adhesion-imparting agent can be used in combination with a heat-curing catalyst. Examples of the inorganic filler include cerium oxide, cerium sulphate, barium titanate, talc, clay, magnesium carbonate, calcium carbonate, aluminum oxide, aluminum hydroxide, mica, or a mixture of two or more. The content of the inorganic filler is not particularly limited. However, in order to achieve high rigidity of the polymer resin layer, 100 parts by weight or more, 100 parts by weight to 600 parts by weight, or 100 may be used based on 100 parts by weight of all the resin components contained in the polymer resin layer. The inorganic filler is added in an amount of from 500 parts by weight. Examples of the release agent include polyolefin waxes such as low molecular weight polypropylene and low molecular weight polyethylene, ester wax, palm wax, paraffin wax, and the like. [0096] The metal adhesion promoter may be a material that does not cause surface deterioration or transparency of the metal material, such as a decane coupling agent, an organic metal coupling agent, or the like. [0097] The leveling agent is used to remove bursts or pits on the surface during coating of the film, and may be used, for example, BYK-380N, BYK-307, BYK-378, and BYK from BYK-Chemie GmbH. -350, and the like. Further, the polymer resin layer may also include a resin or an elastomer having a molecular weight of 5000 or more which can cause phase separation. Thus, the cured product of the polymer resin layer can be subjected to a roughening treatment. Examples of the method of determining the molecular weight of the resin or elastomer having a molecular weight of 5000 g/mol or higher are not particularly limited, and for example, it means a weight average molecular weight measured by polystyrene via GPC (gel permeation chromatography). . As a method of measuring the weight average molecular weight of polystyrene measured by GPC, a generally known analysis device, a detector such as a differential refractive index detector, and an analytical column can be used. Conditions for general use of temperature, solvent, and flow rate can be used. Specific examples of the measurement conditions include a temperature of 30 ° C, a chloroform solvent, and a flow rate of 1 ml/min. Further, in order to impart photocurable properties to the polymer resin layer, the polymer resin layer may further include a heat-curable adhesive containing a photoreactive unsaturated group, or an alkali-soluble resin containing a photoreactive unsaturated group. , and photoinitiators. Examples of the heat-curable adhesive containing a photoreactive unsaturated group, or an alkali-soluble resin containing a photoreactive unsaturated group, and a photoinitiator are not particularly limited, and can be used in association with a photocurable resin composition. A wide variety of compounds in the technical field are not particularly limited. The content of the photoinitiator contained in the polymer resin layer may be 0.01% by weight or less based on the total weight of the polymer resin layer. The description "the content of the photoinitiator contained in the polymer resin layer is 0.01% by weight or less based on the total weight of the polymer resin layer", which means that the content of the photoinitiator contained in the polymer resin layer is very high. Small, or no photoinitiator included. Thus, the interface separation between the insulating layer and the conductive layer which occurs via the photoinitiator can be reduced, and the adhesion and durability of the insulating layer can be improved. Further, the method for manufacturing the insulating layer of the embodiment may include a step of forming a pattern on the polymer resin layer while maintaining a state in which the semiconductor element having the metal protrusion formed on the surface thereof is sealed. [0102] Since the method for manufacturing the insulating layer of the embodiment includes a step of forming a pattern on the polymer resin layer while maintaining the state in which the semiconductor element having the metal protrusion formed on the surface thereof is sealed, high resolution can be formed Fine opening (through hole) without physical damage to the polymer resin layer, without affecting the semiconductor element. In the method for manufacturing a multilayer printed circuit board described below, a fine opening (via) may be metal-filled as a circuit between the lower substrate and the upper substrate with respect to the insulating layer, thereby improving the product in the multilayer structure circuit board. Body. [0103] The pattern formed on the polymer resin layer means a state in which the opening portion is partially formed in the polymer resin layer. In particular, since the pattern is formed on the polymer resin layer, a part of the surface of the substrate layer under the polymer resin layer may be exposed through the opening portion. That is, the step of forming a pattern on the polymer resin layer while maintaining the state in which the semiconductor element having the metal protrusion formed on the surface thereof is sealed may include forming the via hole on the polymer resin layer while maintaining the metal protrusion formed on the layer The step of the state in which the semiconductor element on the surface is sealed. [0104] In the step of forming a pattern on the polymer resin layer, the semiconductor element having the metal protrusion formed on the surface thereof may be maintained in a sealed state. That is, in the method of partially forming the opening portion in the polymer resin layer, no opening is formed in a portion adjacent to the position of the semiconductor element. Therefore, even if the pattern is formed on the polymer resin layer, the semiconductor element and the metal protrusion on the surface retain itself without physical or chemical influence, and thus remain in a sealed state in which all surfaces are in contact with the polymer resin layer. . On the other hand, as an example of a method of forming a pattern on a polymer resin layer, a chemical etching method may be used in which a pattern layer is formed on a polymer resin layer, and a pattern layer is used as an etching mask pattern etching A polymer resin layer. That is, the step of forming a pattern on the polymer resin layer may include the steps of forming a pattern on the polymer resin layer and developing the base layer of the polymer resin layer exposed through the pattern layer. In this case, a photosensitive resin pattern layer or a metal pattern layer may be used as an example of the pattern layer. On the other hand, after the step of alkali development on the polymer resin layer exposed by the pattern layer, 0.1% by weight to 85% by weight may be retained based on the total weight of the polymer resin layer exposed through the pattern layer. 0.1% by weight to 50% by weight, or 0.1% by weight to 10% by weight. This is considered to be because the alkali-soluble resin contained in the polymer resin layer has been removed by the alkaline developer, but remains without removing the heat-curable adhesive or inorganic filler having a small alkali developing property. [0107] In particular, in order to control the degree of retention of the inorganic filler and the heat-curable adhesive, the weight ratio of the heat-curable adhesive and the inorganic filler to the alkali-soluble resin, the ratio of the acid functional groups on the surface of the inorganic filler, and Similar. Preferably, 20 parts by weight to 100 parts by weight of the heat-curable adhesive and 100 parts by weight to 600 parts by weight of the inorganic filler may be added based on 100 parts by weight of the alkali-soluble resin. The acid value of the surface of the inorganic filler may range from 0 mgKOH/g to 5 mgKOH/g, or from 0.01 mgKOH/g to 5 mgKOH/g. The details of the acid value are the same as those for the determination of the acid value of the alkali-soluble resin. [0108] In this manner, in the step of alkali development of the polymer resin layer exposed through the pattern layer, since some of the polymer resin layer remains without being developed, it is possible to prevent the via hole from being removed due to the removal of the polymer resin pattern. This is expanded, and during the subsequent step of removing the pattern layer, the remaining polymer resin layer is removed, rather than removing the desired polymer resin pattern. [0109] When the photosensitive resin pattern layer is used as a mask pattern of the polymer resin layer, the step of forming a pattern on the polymer resin layer may include the steps of: forming a photosensitive resin layer on the polymer resin layer, and The photosensitive resin layer is exposed and alkali-developed to form a photosensitive resin pattern, and at the same time, the polymer resin layer exposed through the photosensitive resin pattern is developed with alkali. [0110] The photosensitive resin layer can exhibit photosensitivity and alkali solubility. Therefore, deformation of the molecular structure can be caused by the exposure method of irradiating the photosensitive resin layer with light, and the resin layer can be etched or removed via a developing method in contact with the alkaline developer. [0111] Therefore, when the photosensitive resin layer is selectively partially exposed and then developed with alkali, the exposed portion is not developed, and only the unexposed portion can be selectively etched and removed. As described above, it remains intact without developing a portion of the photosensitive resin layer by alkali exposure, which is called a photosensitive resin pattern. [0112] That is, in the method of exposing the photosensitive resin layer, for example, the exposure may be selectively performed by contacting the photomask formed on the photosensitive resin layer with a predetermined pattern and then irradiating with ultraviolet light. Imaging a predetermined pattern included in the reticle by a projection objective, followed by irradiation with ultraviolet light, using a laser diode as a light source to directly image a predetermined pattern included in the reticle, followed by irradiation with ultraviolet light, or Similar. In this case, examples of ultraviolet light irradiation conditions may include 5 mJ/cm. 2 Up to 600 mJ/cm 2 The amount of light is irradiated. Further, an example of a method of treating with an alkali developer as a method of performing alkaline development after exposing the photosensitive resin layer may be mentioned. Examples of the alkaline developer are not particularly limited, but, for example, an aqueous alkaline solution such as potassium hydroxide, sodium hydroxide, sodium carbonate, potassium carbonate, sodium phosphate, sodium citrate, ammonia, tetramethylammonium hydroxide, an amine, and Similarly, it can be used by adjusting its concentration and temperature. Commercially available alkaline developers can also be used. The specific amount of use of the alkaline developer is not particularly limited. However, the concentration and temperature must be adjusted so as not to impair the photosensitive resin pattern. For example, it can be used for a 0.5 to 3% aqueous solution of sodium carbonate at 25 ° C to 35 ° C. [0114] The removal rate of the photosensitive resin pattern may be 0.01% by weight or less based on the total weight of the photosensitive resin pattern. The description "the removal ratio of the photosensitive resin pattern is 0.01% by weight or less based on the total weight of the photosensitive resin pattern" may mean that the ratio of the photosensitive resin pattern which has been removed is not remarkable, or the photosensitive resin The graphic is not removed at all. Thus, the photosensitive resin layer is exposed and developed with alkali to form a photosensitive resin pattern, and at the same time, the polymer resin layer exposed through the photosensitive resin pattern can be developed with alkali. As described above, the photosensitive resin layer can be formed into a fine and uniform pattern by utilizing photosensitivity, and via a method in which only a part is selected via the surface of the polymer resin layer exposed to the pattern formed on the photosensitive resin layer and the alkaline developer Sexual contact ensures a high degree of accuracy and high method economics when replacing conventional laser etching methods. That is, in the step of developing the polymer resin layer exposed through the photosensitive resin pattern by alkali, since the photosensitive resin pattern is not removed via the alkaline developer, it is used as a photoresist in a state of being kept intact. The agent mask, and the alkaline developer may be in contact with the polymer resin layer located under the photosensitive resin layer via the opening portion of the photosensitive resin pattern. In this case, since the polymer resin layer includes an alkali-soluble resin which is alkali-soluble, it is dissolved by an alkali developer. Therefore, the portion of the polymer resin layer in contact with the alkali developer can be dissolved and removed. Therefore, the polymer resin layer exposed through the photosensitive resin pattern means a portion of the polymer resin layer whose surface is not in contact with the photosensitive resin pattern, and the polymer resin exposed by the photosensitive resin pattern by alkali development The step of the layer may include a step in which the alkali developer used in forming the photosensitive resin pattern is brought into contact with the underlying polymer resin layer through the photosensitive resin pattern. The polymer resin pattern having the same shape as the photosensitive resin pattern can be formed on the polymer resin layer by the step of developing the polymer resin layer exposed through the photosensitive resin pattern by alkali. A portion of the polymer resin layer which remains intact without being developed by alkali as the photosensitive resin pattern may be referred to as a polymer resin pattern. [0119] As described above, since patterning by developing the photosensitive resin layer and patterning via the developed polymer resin layer are simultaneously performed in an alkaline developer, mass production can be quickly performed and thus the efficiency of the method can be improved, and The fine pattern having the same shape as the fine pattern formed on the photosensitive resin layer can be easily introduced into the polymer resin layer by a chemical method. [0120] When the metal pattern layer is used as the mask pattern of the polymer resin layer, the step of forming a pattern on the polymer resin layer may include the step of: opposing the metal layer to which the carrier film is attached to one surface thereof a surface is attached to the polymer resin layer; a patterned photosensitive resin layer is formed on the carrier film; the carrier film and the metal layer exposed through the patterned photosensitive resin layer are removed to form a patterned metal layer; and the patterned metal layer is formed Separating and removing the carrier film; and developing the polymer resin layer exposed through the patterned metal layer with alkali. [0121] in the step of attaching the opposite surface of the metal layer to which the carrier film is attached to the surface of the polymer resin layer, the opposite surface of the metal layer having the carrier film attached to one surface thereof is attached to the polymer An example of the method of the resin layer may include coating a polymer resin composition on the opposite surface of the metal layer to which the carrier film is attached, and a method of drying the coating. [0122] The step of forming the patterned photosensitive resin layer on the carrier film may include the steps of forming a photosensitive resin layer on the carrier film, and exposing and developing the photosensitive resin layer with alkali. The photosensitive resin layer and details of exposure and development may include the above-described photosensitive resin pattern layer used as a mask pattern of the polymer resin layer. [0123] In the step of removing the carrier film and the metal layer exposed by the patterned photosensitive resin layer, a photosensitive resin pattern is used as a photoresist to form a pattern on the carrier film and the metal layer. Therefore, the carrier film and the metal layer exposed through the photosensitive resin layer pattern mean the carrier film and the metal layer portion whose surface is not in contact with the photosensitive resin layer. [0124] Specifically, the step of removing the carrier film and the metal layer exposed through the photosensitive resin layer pattern may include a photosensitive resin layer in which an etchant is formed thereon, and a carrier film and a metal layer The steps of contact. The etchant may be selected depending on the kind of the carrier film and the metal layer, and if possible, a substance having a less influence on the underlying copper wire and not affecting the photosensitive resin layer is preferably used. [0126] Since it is preferable to use the same material as the metal layer as the material of the carrier film, the carrier film and the metal layer are simultaneously or sequentially removed via the same etchant, and thus the pattern can be easily formed. [0127] Furthermore, in the step of removing the carrier film and the metal layer exposed by the patterned photosensitive resin layer to form the patterned metal layer, the polymer resin layer is shifted based on the total weight of the polymer resin layer. The removal rate can be 0.01% by weight or less. The phrase "the removal rate of the polymer resin layer is 0.01% by weight or less based on the total weight of the polymer resin layer" may mean that the polymer resin layer has been removed to a very insignificant degree, or a polymer The resin layer was not removed. [0128] That is, the etchant used in the step of removing the carrier film and the metal layer exposed through the patterned photosensitive resin layer to form the patterned metal layer has no physical or chemical influence on the polymer resin layer at all. Thus, the polymer resin layer can be stably held until the fine metal pattern layer is formed, and the resolution of the via hole can be increased by using the fine metal pattern layer as a photoresist mask to reduce the aspect ratio. [0129] after removing the carrier film and the metal layer exposed by the patterned photosensitive resin layer to form a patterned metal layer as described above, the patterned metal layer, the patterned carrier film, and the patterned photosensitive resin layer may be It is laminated on the polymer resin layer in this order. [0130] In this case, in order to form the insulating layer, all the remaining layers must be removed in addition to the polymer resin layer and the patterned metal layer formed on the polymer resin layer. For this purpose, an alkaline developer has conventionally been used to remove a photosensitive resin layer for forming a pattern. In this case, a problem is that the alkaline developer causes the polymer resin layer to be developed simultaneously or sequentially. Further, in the case where a metal layer is used for pattern formation, since an etchant is used to remove the metal layer, a problem such as corrosion of the underlying copper wire may occur. [0131] On the other hand, in the case of an embodiment, the retained layer may be separated and removed by a carrier film in addition to the polymer resin layer and the patterned metal layer formed on the polymer resin layer. The simple method of the metal layer is easily removed. [0132] In the above embodiments, since the adhesion between the carrier film and the metal layer is smaller than the adhesion between the polymer resin layer and the metal layer, the polymer resin layer can be prevented from being physically peeled off between the carrier film and the metal layer. Peeling of the metal layer. Further, in the method of separating the carrier film and the metal layer, since the carrier film and the photosensitive resin layer formed on the carrier film are removed together in a state of being attached or peeled off, even if no different etchant is used Only the fine metal pattern mask can be easily left on the polymer resin layer, and thus the resolution of the through hole can be increased by reducing the aspect ratio by the method of forming a pattern as described below. [0134] In the step of developing the polymer resin layer exposed through the metal pattern layer by alkali, a metal pattern layer is used as a photoresist for forming a pattern on the polymer resin layer. Therefore, the polymer resin layer exposed through the metal layer pattern means a portion of the polymer resin layer whose surface is not in contact with the metal layer. [0135] In particular, the step of developing the polymer resin layer exposed through the metal layer pattern by alkali may include a step in which the alkaline developer passes through a metal layer having a pattern formed thereon, and is in contact with the polymer resin layer . Since the polymer resin layer includes an alkali-soluble resin which is alkali-soluble, it is dissolved in an alkaline developer, so that a portion of the polymer resin layer in contact with the alkaline developer can be dissolved and removed. Examples of the alkaline developer are not particularly limited, but, for example, an aqueous alkaline solution such as potassium hydroxide, sodium hydroxide, sodium carbonate, potassium carbonate, sodium phosphate, sodium citrate, ammonia, tetramethylammonium hydroxide, Amines, and the like, can be used, and preferably can be used in a 1% sodium carbonate developer at 30 °C. The specific amount of use of the alkaline developer is not particularly limited. [0138] In this case, a portion of the polymer resin layer that is dissolved and removed when contacted with the alkaline developer may form a through hole, and a through hole included in the polymer resin layer in which the pattern is formed The average diameter can be from 1 micrometer to 500 micrometers, or from 100 micrometers to 300 micrometers. Further, the method for producing the insulating layer of the embodiment may include the step of first curing the polymer resin layer in which a pattern is formed. In the step of curing the polymer resin layer, examples of the specific curing method are not particularly limited, and any heat curing or photocuring method may be used without limitation. [0140] A main chain including an ester bond may be formed in the polymer resin layer via a main curing step. Examples of the formation of an ester bond include a photocurable monolithic acrylic resin in which an acrylic acid is formed into an ester bond, or thermally cured to form an ester bond via reaction of a carboxylic acid with an epoxy. In this case, specific heat curing conditions are not limited, and thermal curing can be performed by adjusting preferable conditions by an etching method according to the polymer resin layer described below. For example, in the case of etching the polymer resin layer by treatment with a photoresist stripping liquid, the main curing step of the polymer resin layer may be performed at a temperature of 50 ° C to 150 ° C for 0.1 hour to 2 hours. When the heat curing temperature of the polymer resin layer is too low or the heat curing time is shortened, the polymer resin layer may be excessively damaged by the peeling liquid. Further, when the heat curing temperature of the polymer resin layer is high or the heat curing time becomes long, it may be difficult to etch the polymer resin layer with a peeling liquid. Further, the method for producing the insulating layer of the embodiment may include the step of etching the surface of the cured polymer resin layer with an alkaline aqueous solution to expose the metal protrusions. Since the metal protrusion is exposed by etching the surface of the cured polymer resin layer with an alkaline aqueous solution, the electric signal can be connected to the conductor line sealed in the cured polymer resin layer via the exposed metal protrusion. Exposure of the metal protrusions can be performed by etching with an alkaline aqueous solution. The aqueous alkaline solution may have a temperature of from 10 ° C to 100 ° C, or from 25 ° C to 60 ° C, and a concentration of from 1% to 10%, or from 1% to 5%, and more specifically, a photoresist may be used to strip the liquid. The alkaline aqueous solution may destroy the ester bond in the polymer resin layer, wherein the main chain containing the ester bond is formed via the first curing, thereby etching away the polymer resin layer. At this time, by adjusting the concentration and temperature of the alkaline aqueous solution, the rate at which the polymer resin layer is etched with the alkaline aqueous solution can be adjusted, and the etching rate can be maintained within an appropriate range within the above range, thereby adjusting the thickness of the polymer resin layer while Ensure method efficiency. An aqueous solution of a metal hydroxide such as potassium hydroxide or sodium hydroxide may be used as the alkaline aqueous solution, and a commercially available product such as the Resistrip product group (Atotech), ORC-731, ORC- may be used. 723K, ORC-740, and SLF-6000 (manufactured by Orchem Corporation). [0145] The alkaline aqueous solution etching may be performed from the surface of the cured polymer resin layer. The surface of the cured polymer resin layer means a region in which a polymer resin layer which seals a conductor line having metal protrusions formed on the surface thereof is in contact with air. Since the etching proceeds from the surface of the cured polymer resin layer to the sealing of the polymer resin layer of the conductor wiring having the metal protrusion formed on the surface thereof, the metal protrusion can be exposed. [0146] In order to perform surface etching from the cured polymer resin layer with an alkaline aqueous solution, the above basic aqueous solution may be in contact with the surface of the cured polymer resin layer. At this time, in order to secure the thickness uniformity by uniform removal without physical damage to the polymer resin layer, the alkaline aqueous solution may be brought into contact with the surface of the polymer resin layer by, for example, spraying. [0147] Before the step of etching the surface of the cured polymer resin layer with an alkaline aqueous solution to expose the metal protrusion, the step of removing the pattern layer remaining on the polymer resin layer may be performed as needed. The example of the alkaline aqueous solution to be used for the photosensitive resin pattern layer or the metal pattern layer is not particularly limited as long as the photoresist stripping liquid can be treated, or a desmear method, an etching method, or the like can be performed. By making the copper foil of the metal layer extremely thin, at a thickness of 3 microns or less, an etchant that removes the metal layer while partially removing the underlying copper wire, or an etchant that removes the metal layer but does not affect the underlying copper wire may be used. . However, it is preferred to use a method of selectively removing only the pattern layer without affecting the underlying polymer resin layer. Further, the method for producing the insulating layer of the embodiment may include the step of secondarily curing the polymer resin layer in a state where the metal protrusion is exposed. Through this secondary curing step, the chemical resistance of the insulating layer finally produced by the secondary curing step can be improved. [0149] In this case, the specific curing conditions are not limited, and the secondary curing step of, for example, the polymer resin layer may be performed at a temperature of 150 ° C to 250 ° C for 0.1 hour to 2 hours. Meanwhile, in accordance with another embodiment of the present invention, a method for fabricating a multilayer printed circuit board comprising the steps of forming a metal pattern layer may be provided, wherein a pattern is formed on the insulating layer fabricated in the embodiment. [0151] The inventors have found that when the insulating layer fabricated in one embodiment includes a semiconductor element having metal protrusions formed on its surface, the metal protrusion is exposed to the outside of the insulating layer, and the metal pattern layer is new. Laminated on the insulating layer, the metal pattern layer can transmit and receive electrical signals through the metal protrusions and the semiconductor elements in the insulating layer, thereby completing the invention [0152] The insulating layer can be used as an interlayer insulating material of the multilayer printed circuit board, and It comprises a cured product of an alkali-soluble resin and a heat-curable adhesive, in particular a heat-curable material or a photocurable material. Details of the alkali-soluble resin and the heat-curable adhesive include those described in the above examples. [0153] A more specific example of the step of forming the metal pattern layer on the insulating layer may include the steps of: forming a metal thin film on the insulating layer; forming a photosensitive resin layer on the metal thin film, and patterning on the photosensitive resin layer Depositing a metal on the metal film exposed through the pattern of the photosensitive resin layer; and removing the photosensitive resin layer and the exposed metal film. [0154] In the step of forming a metal thin film on the insulating layer, examples of the method of forming the metal thin film include a dry deposition method or a wet deposition method, and specific examples of the dry deposition method include vacuum deposition, ion plating, sputtering, and Similar. On the other hand, a specific example of the wet deposition method which can be mentioned is electroless plating of a plurality of metals and the like, and electroless copper plating is usually used. Further, a roughening treatment step may be further included before or after vapor deposition. [0156] The roughening treatment method may be a dry and wet method depending on conditions. Examples of the dry method include vacuum treatment, atmospheric pressure treatment, gas plasma treatment, gas excimer UV treatment, and the like. Examples of wet methods include desmear treatment. Through these roughening treatment methods, the surface roughness of the metal thin film can be increased, and the adhesion to the metal deposited on the metal thin film can be improved. [0157] Further, the step of forming the metal thin film on the insulating layer may further include the step of forming a surface treatment layer on the insulating layer before depositing the metal thin film. Thus, the adhesion between the metal thin film and the insulating layer can be improved. [0158] Specifically, as an example of a method of forming a surface treatment layer on the insulating layer, at least one selected from the group consisting of an ion assisted reaction method, an ion beam treatment method, and a plasma treatment method can be used. The plasma processing method may include any one of an atmospheric plasma processing method, a DC plasma processing method, and an RF plasma processing method. As a result of the surface treatment method, a surface treatment layer containing a reactive functional group can be formed on the surface of the insulating layer. Another example of a method which can be mentioned as forming a surface treatment layer on an insulating layer is a method of depositing chromium (Cr) and titanium (Ti) metal having a thickness of 50 nm to 300 nm on the surface of the insulating layer. [0159] Meanwhile, the step of forming the photosensitive resin layer patterned thereon in the metal thin film may include the step of exposing and developing the photosensitive resin layer formed on the metal thin film. Details of exposing and developing the photosensitive resin layer may be included in the above embodiment. [0160] In particular, it is preferable to form a pattern to be formed on the metal thin film so that the opening portion included in the pattern is in contact with the metal protrusion exposed to the outside of the insulating layer. The opening portion included in the above figure means a portion to be removed by exposing and developing the photosensitive resin layer, and corresponds to a portion in which a metal is deposited by metal vapor deposition, which will be described below to form Metal graphics layer. Therefore, the opening portion included in the pattern must be formed to be in contact with the metal protrusion exposed outside the insulating layer. In this case, when the metal pattern layer is in contact with the metal protrusion, the electrical signal can be transmitted and received with the conductor line in the insulating layer. In the step of depositing a metal on the metal thin film exposed through the photosensitive resin layer pattern, the metal thin film exposed through the photosensitive resin layer pattern means a portion of the metal thin film which is not in contact with the photosensitive resin layer on the surface. The metal to be deposited may be copper. Examples of the deposition method are not particularly limited, and a variety of well-known physical or chemical vapor deposition methods can be used without limitation. A general example is the use of a copper plating process. [0162] In this case, the metal pattern layer may be formed on the metal deposited on the metal thin film exposed through the photosensitive resin layer pattern, and more specifically, the metal pattern layer may be formed to be connected to the semiconductor via the metal protrusion. element. Therefore, the metal pattern layer can transmit and receive electrical signals with the semiconductor elements included in the insulating layer. More specifically, one end of the metal protrusion is in contact with the semiconductor element, and the other end of the metal protrusion is in contact with the metal pattern layer to be electrically connected to the semiconductor element and the metal pattern layer. [0163] In the step of removing the photosensitive resin layer and removing the exposed metal thin film, a photoresist may be used to strip the liquid in the example of the method of removing the photosensitive resin layer, and an etchant may be used to remove the metal. In the example of the method of the film, the film is exposed by removing the photosensitive resin layer. [0164] A multilayer printed circuit board manufactured by a method of manufacturing a multilayer printed circuit board can be further used as a build-up material. For example, the first step of forming an insulating layer on a multilayer printed circuit board according to the manufacturing method of the insulating layer according to the embodiment, and the manufacturing method of the multilayer printed circuit board according to another embodiment may be repeated to form a metal substrate on the insulating layer. The second step. Therefore, the number of layers to be laminated in the multilayer printed circuit board manufactured by the manufacturing method of the multilayer printed circuit board is not particularly limited, and may have, for example, one or more layers in accordance with the purpose of application and use. Or one to twenty floors. [0166] The step of forming the metal pattern layer on the insulating layer may include filling a via hole included in the pattern in the insulating layer with a metal. As described above, the insulating layer produced in the above embodiment includes a pattern having a through hole (opening) therein. In the method of forming a metal pattern layer on the insulating layer, the metal may fill a via (opening) in the insulating layer. Specifically, in the step of forming a metal thin film on the insulating layer, a metal thin film may be formed on the insulating layer, and the insulating layer surrounds the via hole (opening) included in the insulating layer and on the surface of the lower substrate. By the step of depositing a metal on the metal thin film, when the metal is deposited in the through hole (opening), the through hole (opening) may be filled with the metal. [0167] The pores (through holes) are filled with metal as described above, which can serve as a circuit between the substrate and the upper substrate with respect to the insulating layer, thereby improving the integratedness in the circuit board of the multilayer structure. [0168] On the other hand, after the step of forming a metal pattern layer on the insulating layer, the step of removing the substrate formed under the semiconductor element may be further included when necessary. As described above, the semiconductor element may exist in a state of being formed on the substrate of the lower portion, the substrate including a semiconductor material such as a circuit board, a sheet, a multilayer printed wiring board, or the like. In order to form a multilayered circuit board having a finer structure, the substrate of the lower portion of the semiconductor element can be removed as needed, and the substrate exists in a state of being attached or bonded to the polymer resin layer, and thus can be physically peeled off. [Advantageous Effects] According to the present invention, it is possible to provide a manufacturing method of an insulating layer which can be manufactured in a faster and simpler manner, which can improve the efficiency of the method, can easily adjust the thickness of the insulating layer, and can form a high-resolution pass. The hole is free from physical damage, and a method of manufacturing a multilayer printed circuit board using the insulating layer obtained by the method of manufacturing the insulating layer.

[實施例之詳述] 　　[0171] 以下將經由實施例更詳細敘述本發明。然而，提供這些實施例係只用於說明之目的，不應認為本發明之範疇被限制至這些實施例。 ＜製造實施例：鹼溶性樹脂之製造＞ 製造實施例1 　　[0172] 作為溶劑之632克的二甲基甲醯胺基(DMF)、作為N-經取代順丁烯二醯亞胺化合物之358克的BMI-1100(產品名稱，Daiwakasei所製造)以及作為胺化合物之151克的4-胺苯基乙酸被放置及混合於2升反應槽中，其有加熱及冷卻能力，且裝設有溫度計、攪拌器、回流冷凝器、及定量濕氣分析儀，再於85℃攪拌24小時以製造具有50%之固體含量之鹼溶性樹脂溶液。 製造實施例2 　　[0173] 作為溶劑之632克的二甲基甲醯胺基(DMF)、作為N-經取代順丁烯二醯亞胺化合物之434克的對羧基苯基順丁烯二醯亞胺以及作為胺化合物之198克的4,4-二胺基二苯基甲烷被放置及混合於2升反應槽中，其有加熱及冷卻能力，且裝設有溫度計、攪拌器、回流冷凝器、及定量濕氣分析儀，再於85℃攪拌24小時以製造具有50%之固體含量之鹼溶性樹脂溶液。 製造實施例3 　　[0174] 作為溶劑之543克的二甲基乙醯胺基(DMAc)被放置及混合於2升反應槽中，其有加熱及冷卻能力，且裝設有溫度計、攪拌器、回流冷凝器、及定量濕氣分析儀，添加350克的SMA1000(Cray Valley)、144克的4-胺基苯甲酸(PABA)及49克的4-胺基苯酚(PAP)被至反應槽並且混合。於氮氣中反應器之溫度被設定至80℃之後，該酸酐及苯胺衍生物反應24小時以形成一種醯胺酸。然後，反應器之溫度被設定至150℃，及亞胺化反應持續24小時以製造具有50%之固體含量之鹼溶性樹脂溶液。 製造實施例4 　　[0175] 作為溶劑之516克的甲基乙基酮(MEK)被放置及混合於2升反應槽中，其有加熱及冷卻能力，且裝設有溫度計、攪拌器、回流冷凝器、及定量濕氣分析儀，添加228克的對羧基苯基順丁烯二醯亞胺、85克的對羥苯基順丁烯二醯亞胺、203克的苯乙烯、及0.12克的偶氮二異丁腈(AIBN)並且混合。於氮氣中反應器之溫度被逐漸升至70℃，及反應持續24小時以製造具有50%之固體含量之鹼溶性樹脂溶液。 ＜實施例1及2：絕緣層及多層印刷電路板之製造＞ 實施例1 絕緣層之製造 　　[0176] 以如下步驟＜1＞至＜10＞之順序製造絕緣層。 　　＜1＞ 於矽晶圓1上形成可脫黏之暫時性黏著劑2， 　　＜2＞ 於具有80微米厚度之半導體晶片3上旋轉塗覆光阻以形成圖形，進行電鍍以形成銅突出物4，其具有15微米之高度及20微米之直徑，然後將具有銅突出物4形成於其上之半導體晶片3壓層至矽晶圓1上之可脫黏暫時性黏著劑2，以形成一結構，其中矽晶圓1-可脫黏之暫時性黏著劑2-半導體晶片3-銅突出物4被依順序壓層。 　　＜3＞ 經由混合於製造實施例1中合成之鹼溶性樹脂16克、作為可熱固化黏合劑之5克的MY-510(Huntsman 所製造)以及作為無機填料之35克的SC2050 MTO(Adamatech 所製造)所獲得之聚合物樹脂組成物被以100微米之厚度塗覆至超薄銅箔6(MT18SD-H，Mitsui Kinzoku 所製造)之有載體銅箔7被附著的一表面之對立表面上，再被乾燥以製造一結構，其中載體銅箔7-超薄銅箔6-聚合物樹脂層5被依順序壓層。隨後，於矽晶圓1上之可脫黏之暫時性黏著劑2及聚合物樹脂層5於85℃被真空壓層以形成一結構，其中矽晶圓1-可脫黏之暫時性黏著劑2-半導體晶片3-銅突出物4-聚合物樹脂層5-超薄銅箔6-載體銅箔7被依順序壓層，因而密封半導體晶片3及銅突出物4。 　　＜4＞ 具有厚度15微米之光敏性乾膜光阻8(KL1015，Kolon Industries 所製造)於110℃被壓層於載體銅箔7上。使具有直徑150微米之圓形負型光罩與光敏性乾膜光阻8接觸，且以紫外光(25 mJ/cm 2之光量)照射。光敏性乾膜光阻8於30℃經由1%碳酸鈉顯影劑顯影以形成固定的圖形。然後，載體銅箔7及超薄銅箔6經由以蝕刻劑處理被蝕刻。此時，於其上形成圖形之光敏性乾膜光阻8作為載體銅箔7及超薄銅箔6之保護層，故與光敏性乾膜光阻8相同之圖形被亦形成於載體銅箔7及超薄銅箔6上。 　　＜5＞ 分離超薄銅箔6及載體銅箔7，且移除載體銅箔7及壓層於載體銅箔7上之光敏性乾膜光阻8。 　　＜6＞ 於30℃經由1%碳酸鈉顯影劑顯影聚合物樹脂層5。此時，於其上有圖形形成之超薄銅箔6作為聚合物樹脂層5之保護層，及因此與超薄銅箔6相同之圖形亦被形成於聚合物樹脂層5上，及形成具有200微米直徑之通孔9。 　　＜7＞ 使於其上有圖形形成之聚合物樹脂層5以100℃之溫度熱固化1小時。 　　＜8＞ 處理蝕刻劑以移除保留於聚合物樹脂層5上之超薄銅箔6。 　　＜9＞ 於50℃之溫度將3%氫氧化鈉光阻剝離液體噴塗至聚合物樹脂層5之表面上。因而，經由移除聚合物樹脂層至一深度，其為由聚合物樹脂層5表面算約3微米，而曝露銅突出物4於表面上，以水洗，並且乾燥。此時，以每板10秒至60秒之連續方法進行曝露銅突出物4之方法。 　　＜10＞ 於200℃之溫度，將其中有銅突出物4曝露於表面上之聚合物樹脂層5熱固化1小時以製造絕緣層。 (2)多層印刷電路板之製造 　　[0177] 以如下步驟＜11＞至＜13＞之順序製造絕緣層。 　　＜11＞ 使用濺鍍機於所製造之絕緣層上蒸氣沉積鈦-銅薄膜，及於100℃之溫度加熱30分鐘以改進對濺鍍層之附著性。然後，壓層一乾膜(RY-5319，Hitachi Kasei)以形成圖形，及進行電鍍以形成金屬圖形形式之電路，且同時以金屬填充通孔9。 　　＜12＞ 於110℃於電路上壓層15微米厚之光敏性乾膜光阻KL1015(Kolon Industries 所製造)，及使具有30微米直徑之圓形負型光罩與該光敏性乾膜光阻接觸，及以紫外光(25 mJ/cm 2之光量)照射。經由1%碳酸鈉顯影劑於30℃顯影光敏性乾膜光阻8以形成具有固定圖形的焊劑光阻10。 　　＜13＞ 自絕緣層分離且移除矽晶圓1與可脫黏之暫時性黏著劑2以完成多層印刷電路板。 實施例2 　　[0178] 以如下步驟＜1＞至＜10＞之順序製造絕緣層。 　　＜1＞於銅箔壓層板(LG-500GA VB/VB，LG Chem)1上形成超薄銅箔6，及於超薄銅箔6上形成載體銅箔7。 　　＜2＞ 於半導體晶片3上旋轉塗覆光阻以形成圖形，及進行電鍍以形成具有15微米高度及20微米直徑之銅突出物4，然後將具有銅突出物4形成於其上之半導體晶片3經由晶粒黏合膜2而壓層至於銅箔壓層板1上之載體銅箔7上，以形成一結構，其中銅箔壓層板1-超薄銅箔6-載體銅箔7-晶粒黏合膜2-半導體晶片3-銅突出物4被依順序壓層。 　　＜3＞ 經由混合製造實施例1中合成之16克的鹼溶性樹脂、作為可熱固化黏合劑之5克的MY-510(Huntsman 所製造)以及作為無機填料之35克的SC2050 MTO(Adamatech 所製造)所獲得之聚合物樹脂組成物被以100微米之厚度塗覆至具有3微米厚度之超薄銅箔6(MT18SD-H，Mitsui kinzoku)(其一表面上附著有載體銅箔7)之對立表面上，並且乾燥以製造一結構，其中載體銅箔7-超薄銅箔6-聚合物樹脂層5被依順序壓層。隨後，於85℃將於矽晶圓1上之載體銅箔7及聚合物樹脂層5真空壓層以形成一結構，其中銅箔壓層板1-超薄銅箔6-載體銅箔7-晶粒黏合膜2-半導體晶片3-銅突出物4-聚合物樹脂層5-超薄銅箔6-載體銅箔7被依順序壓層，因而密封半導體晶片3及銅突出物4。 　　＜4＞ 於110℃，將具有15微米厚度之光敏性乾膜光阻8(KL1015，Kolon Industries 所製造)壓層於載體銅箔7上。使具有150微米直徑之圓形負型之光罩與光敏性乾膜光阻8接觸，及以紫外光(25 mJ/cm 2之光量)照射。經由1%碳酸鈉顯影劑於30℃顯影光敏性乾膜光阻8以形成固定的圖形。然後，經由處理蝕刻劑而蝕刻載體銅箔7及超薄銅箔6。此時，於其上有圖形形成之光敏性乾膜光阻劑8作為載體銅箔7及超薄銅箔6之保護層，故與光敏性乾膜光阻劑8相同之圖形亦形成於載體銅箔7及超薄銅箔6上。 　　＜5＞ 分離超薄銅箔6及載體銅箔7，及移除壓層於載體銅箔7上之光敏性乾膜光阻8及載體銅箔7。 　　＜6＞ 經由1%碳酸鈉顯影劑於30℃顯影聚合物樹脂層5。此時，於其上有圖形形成之超薄銅箔6作為聚合物樹脂層5之保護層，故與超薄銅箔時6相同之圖形亦形成於聚合物樹脂層5上，及形成具有200微米直徑之通孔9。 　　＜7＞ 使於其上有圖形形成之聚合物樹脂層5於100℃之溫度熱固化1小時。 　　＜8＞ 蝕刻劑被處理以移除留存於聚合物樹脂層5上之超薄銅箔6 。 　　＜9＞ 於50℃之溫度噴塗3%氫氧化鈉光阻剝離液體至聚合物樹脂層5之表面上。因而，經由移除聚合物樹脂層至由聚合物樹脂層5表面算約3微米之深度，以水洗，並且乾燥，而使銅突出物4曝露於表面上。此時，以每板10秒至60秒之連續方法進行曝露銅突出物4之方法。 　　＜10＞ 將具有銅突出物4曝露於其表面上之聚合物樹脂層5於200℃之溫度熱固化1小時以製造絕緣層。 (3)多層印刷電路板之製造 　　[0179] 以如下步驟＜11＞至＜14＞之順序製造絕緣層。 　　＜11＞ 使用無電銅電鍍將銅薄膜蒸氣沉積於所製造之絕緣層上，及於100℃之溫度加熱30分鐘以改進對無電銅電鍍之附著性。然後，壓層一乾膜(RY-5319，Hitachi Kasei)以形成圖形，進行電鍍以形成金屬圖形形式之電路，且同時以金屬填充通孔9。 　　＜12＞ 於110℃，將15微米厚之光敏性乾膜光阻 KL1015(Kolon Industries 所製造)壓層於電路上，及使具有30微米直徑之圓形負型之光罩與光敏性乾膜光阻接觸，及以紫外光(25 mJ/cm 2之光量)照射。於30℃經由1%碳酸鈉顯影劑顯影光敏性乾膜光阻，以形成具有固定圖形的焊劑光阻10。 　　＜13＞ 分離超薄銅箔6及載體銅箔7，及移除超薄銅箔6及壓層於超薄銅箔6下之銅箔壓層板1。 　　＜14＞ 經由蝕刻移除留存於絕緣層下之載體銅箔7以完成多層印刷電路板。 實施例3 　　[0180] 以與實施例1相同方式製造絕緣層及多層印刷電路板，差別在於使用製造實施例2中合成之鹼溶性樹脂以代替於實施例1中之絕緣層製造方法之製造實施例1中合成之鹼溶性樹脂。 實施例4 　　[0181] 以與實施例1相同方式製造絕緣層及多層印刷電路板，差別在於使用製造實施例3中合成之鹼溶性樹脂以代替於製造實施例1中合成之鹼溶性樹脂。 實施例5 　　[0182] 以與實施例1相同方式製造絕緣層及多層印刷電路板，差別在於使用製造實施例4中合成之鹼溶性樹脂以代替於實施例1中之絕緣層製造方法之製造實施例1中合成之鹼溶性樹脂。 實施例6 　　[0183] 以與實施例1相同方式製造絕緣層及多層印刷電路板，差別在於在聚合物樹脂層之製備期間，使用經由混合於製造實施例1中合成之16克的鹼溶性樹脂、作為可熱固化之5克的黏合劑之MY-510(Huntsman 所製造)以及作為無機填料之43克的SC2050 MTO(固體含量70%，Adamatech所製造)所獲得之聚合物樹脂組成物。 實施例7 　　[0184] 以與實施例6相同方式製造絕緣層及多層印刷電路板，差別在於使用於製造實施例2中合成之鹼溶性樹脂以代替於製造實施例1中合成之鹼溶性樹脂。 實施例8 　　[0185] 以與實施例6相同方式製造絕緣層及多層印刷電路板，差別在於使用於製造實施例3中合成之鹼溶性樹脂以代替於製造實施例1中合成之鹼溶性樹脂。 實施例9 　　[0186] 以與實施例6相同方式製造絕緣層及多層印刷電路板，差別在於使用於製造實施例4中合成之鹼溶性樹脂以代替於製造實施例1中合成之鹼溶性樹脂。 ＜比較實施例1至3：絕緣層及多層印刷電路板之製造＞ 比較實施例1 絕緣層之製造 　　[0187] 以與實施例1相同方式製造絕緣層，差別在於在步驟＜3＞中，使用100微米厚之模片(LE-T17B，Ajinomoto)以代替製造實施例1之聚合物樹脂層及於120℃真空壓層，於步驟＜7＞中於170℃進行熱固化1小時，且於步驟＜9＞中，以研磨機研磨經熱固化樹脂層之表面以曝露銅突出物。 　　[0188] 於此情形中，以批次方法進行銅突出物之曝露方法每板10分鐘至20分鐘，且確認其比實施例花較長時間。 比較實施例2 　　[0189] 以與實施例1相同方式製造絕緣層及多層印刷電路板，差別在於在步驟＜9＞中，不於50℃之溫度噴塗3%氫氧化鈉光阻剝離液體至聚合物樹脂層之表面上，而是使聚合物樹脂層依照習知方法受到除膠渣處理，其順序為膨脹(Atotech，Sweller-p 40%)、蝕刻(KMnO 49%，NaOH，6%)、及中和(H 2SO 4，9%)，及因此經由移除聚合物樹脂層至由聚合物樹脂層表面算約3微米之深度，將銅突出物曝露於表面上。 　　[0190] 於此情形中，只於蝕刻步驟中以每板5分鐘至10分鐘之連續批次方法進行用以曝露銅突出物之除膠渣方法。因此確認，在與實施例比較下，其不只花較長時間，且必須添加有害之化學物質，例如過錳酸鉀，但亦難以調整聚合物樹脂層之厚度。 比較實施例3 　　[0191] 以與實施例1相同方式製造絕緣層，差別在於省略在步驟＜7＞中使聚合物樹脂層受到於100℃溫度之主要熱固化1小時之步驟。 　　[0192] 此時，於比較實施例3之情形中，確認於噴塗氫氧化鈉光阻劑剝離液體之後10秒內，聚合物樹脂層完全被移除，及因此有對銅突出物及下方電路之技術限制。 　　[0193] 亦即，於比較實施例3之情形中，其中在噴塗剝離液體之前不進行固化聚合物樹脂層之步驟，難以控制聚合物樹脂層被移除之程度，且不適用於只曝露部分之銅突出物至聚合物樹脂層之表面。 [Details of Embodiments] [0171] Hereinafter, the present invention will be described in more detail by way of examples. However, these examples are provided for illustrative purposes only, and the scope of the invention should not be construed as being limited to the embodiments. <Manufacturing Example: Production of alkali-soluble resin> Production Example 1 632 g of dimethylformamide (DMF) as a solvent and 358 as an N-substituted maleimide compound BMI-1100 (product name, manufactured by Daiwakasei) and 151g of 4-amine phenylacetic acid as an amine compound are placed and mixed in a 2 liter reaction tank with heating and cooling capacity and a thermometer A stirrer, a reflux condenser, and a quantitative moisture analyzer were further stirred at 85 ° C for 24 hours to produce an alkali-soluble resin solution having a solid content of 50%. Production Example 2 632 g of dimethylformammine (DMF) as a solvent and 434 g of p-carboxyphenylbutylene as an N-substituted maleimide compound The imine and 198 g of 4,4-diaminodiphenylmethane as an amine compound were placed and mixed in a 2-liter reaction tank with heating and cooling capacity, and equipped with a thermometer, a stirrer, and reflux condensation. The apparatus and the quantitative moisture analyzer were further stirred at 85 ° C for 24 hours to produce an alkali-soluble resin solution having a solid content of 50%. Production Example 3 [0174] 543 g of dimethylacetamide (DMAc) as a solvent was placed and mixed in a 2-liter reaction tank having heating and cooling ability, and equipped with a thermometer, a stirrer, A reflux condenser, and a quantitative moisture analyzer were added to the reaction tank with 350 grams of SMA1000 (Cray Valley), 144 grams of 4-aminobenzoic acid (PABA), and 49 grams of 4-aminophenol (PAP). mixing. After the temperature of the reactor in nitrogen was set to 80 ° C, the anhydride and the aniline derivative were reacted for 24 hours to form a proline. Then, the temperature of the reactor was set to 150 ° C, and the imidization reaction was continued for 24 hours to produce an alkali-soluble resin solution having a solid content of 50%. Production Example 4 [0175] 516 g of methyl ethyl ketone (MEK) as a solvent was placed and mixed in a 2-liter reaction tank having heating and cooling ability, and equipped with a thermometer, a stirrer, and reflux condensation. And a quantitative moisture analyzer, adding 228 grams of p-carboxyphenyl maleimide, 85 grams of p-hydroxyphenyl maleimide, 203 grams of styrene, and 0.12 grams. Azobisisobutyronitrile (AIBN) and mixed. The temperature of the reactor was gradually raised to 70 ° C in nitrogen, and the reaction was continued for 24 hours to produce an alkali-soluble resin solution having a solid content of 50%. <Examples 1 and 2: Production of Insulating Layer and Multilayer Printed Circuit Board> Example 1 Production of Insulating Layer [0176] An insulating layer was produced in the following steps <1> to <10>. <1> A debondable temporary adhesive 2 is formed on the wafer 1 and <2> a photoresist is spin-coated on the semiconductor wafer 3 having a thickness of 80 μm to form a pattern, and electroplating is performed to form a copper bump 4 , having a height of 15 μm and a diameter of 20 μm, and then laminating the semiconductor wafer 3 having the copper protrusions 4 thereon to the debondable temporary adhesive 2 on the germanium wafer 1 to form a structure , wherein the 矽 wafer 1 - debondable temporary adhesive 2 - semiconductor wafer 3 - copper protrusions 4 are sequentially laminated. <3> By the mixing of 16 g of the alkali-soluble resin synthesized in Production Example 1, 5 g of MY-510 (manufactured by Huntsman) as a heat-curable adhesive, and 35 g of SC2050 MTO as an inorganic filler (Adamatech Institute) The polymer resin composition obtained by the production) is applied to the opposite surface of a surface on which the carrier copper foil 7 to which the ultra-thin copper foil 6 (MT18SD-H, manufactured by Mitsui Kinzoku) is attached, is applied in a thickness of 100 μm. It is further dried to produce a structure in which the carrier copper foil 7 - ultra-thin copper foil 6 - polymer resin layer 5 is laminated in this order. Subsequently, the debondable temporary adhesive 2 and the polymer resin layer 5 on the wafer 1 are vacuum laminated at 85 ° C to form a structure in which the wafer 1 - debondable temporary adhesive is formed. 2-Semiconductor Wafer 3 - Copper Projection 4 - Polymer Resin Layer 5 - Ultrathin Copper Foil 6 - The carrier copper foil 7 is laminated in this order, thereby sealing the semiconductor wafer 3 and the copper protrusions 4. <4> A photosensitive dry film resist 8 (KL1015, manufactured by Kolon Industries) having a thickness of 15 μm was laminated on the carrier copper foil 7 at 110 °C. A circular negative mask having a diameter of 150 μm was brought into contact with the photosensitive dry film photoresist 8 and irradiated with ultraviolet light (a light amount of 25 mJ/cm 2 ). The photosensitive dry film photoresist 8 was developed through a 1% sodium carbonate developer at 30 ° C to form a fixed pattern. Then, the carrier copper foil 7 and the ultra-thin copper foil 6 are etched by treatment with an etchant. At this time, the photosensitive dry film photoresist 8 on which the pattern is formed serves as a protective layer of the carrier copper foil 7 and the ultra-thin copper foil 6, so that the same pattern as the photosensitive dry film photoresist 8 is also formed on the carrier copper foil. 7 and ultra-thin copper foil 6. <5> The ultra-thin copper foil 6 and the carrier copper foil 7 are separated, and the carrier copper foil 7 and the photosensitive dry film photoresist 8 laminated on the carrier copper foil 7 are removed. <6> The polymer resin layer 5 was developed through a 1% sodium carbonate developer at 30 °C. At this time, the ultra-thin copper foil 6 having the pattern formed thereon is used as a protective layer of the polymer resin layer 5, and thus the same pattern as that of the ultra-thin copper foil 6 is also formed on the polymer resin layer 5, and is formed with 200 micron diameter through hole 9. <7> The polymer resin layer 5 on which the pattern was formed was thermally cured at a temperature of 100 ° C for 1 hour. <8> An etchant is treated to remove the ultra-thin copper foil 6 remaining on the polymer resin layer 5. <9> A 3% sodium hydroxide photoresist stripping liquid was sprayed onto the surface of the polymer resin layer 5 at a temperature of 50 °C. Thus, by removing the polymer resin layer to a depth which is about 3 μm from the surface of the polymer resin layer 5, the copper protrusions 4 are exposed on the surface, washed with water, and dried. At this time, the method of exposing the copper protrusions 4 is carried out in a continuous method of 10 seconds to 60 seconds per plate. <10> The polymer resin layer 5 in which the copper protrusions 4 were exposed on the surface was thermally cured at 200 ° C for 1 hour to fabricate an insulating layer. (2) Manufacturing of Multilayer Printed Circuit Board [0177] An insulating layer was produced in the order of the following steps <11> to <13>. <11> A titanium-copper film was vapor-deposited on the produced insulating layer using a sputtering machine, and heated at a temperature of 100 ° C for 30 minutes to improve adhesion to the sputter layer. Then, a dry film (RY-5319, Hitachi Kasei) was laminated to form a pattern, and electroplating was performed to form a circuit in the form of a metal pattern, and at the same time, the through holes 9 were filled with metal. <12> A 15 μm thick photosensitive dry film photoresist KL1015 (manufactured by Kolon Industries) was laminated on the circuit at 110 ° C, and a circular negative mask having a diameter of 30 μm and the photosensitive dry film photoresist were laminated. Contact, and irradiated with ultraviolet light (amount of light of 25 mJ/cm 2 ). The photosensitive dry film photoresist 8 was developed through a 1% sodium carbonate developer at 30 ° C to form a solder resist 10 having a fixed pattern. <13> The tantalum wafer 1 and the debondable temporary adhesive 2 are separated from the insulating layer to complete the multilayer printed circuit board. Example 2 An insulating layer was produced in the order of the following steps <1> to <10>. <1> An ultra-thin copper foil 6 is formed on a copper foil laminate (LG-500GA VB/VB, LG Chem) 1, and a carrier copper foil 7 is formed on the ultra-thin copper foil 6. <2> A photoresist is spin-coated on the semiconductor wafer 3 to form a pattern, and electroplating is performed to form a copper bump 4 having a height of 15 μm and a diameter of 20 μm, and then a semiconductor wafer having the copper protrusion 4 formed thereon 3 is laminated on the carrier copper foil 7 on the copper foil laminate 1 via the die adhesion film 2 to form a structure in which the copper foil laminate 1 - ultra-thin copper foil 6 - carrier copper foil 7 - crystal The particle-bonded film 2-semiconductor wafer 3 - copper protrusions 4 are laminated in sequence. <3> 16 g of an alkali-soluble resin synthesized in Example 1 and 5 g of MY-510 (manufactured by Huntsman) as a heat-curable adhesive and 35 g of SC2050 MTO as an inorganic filler (Adamatech Institute) were produced by mixing. The polymer resin composition obtained by the production was applied to a thin copper foil 6 (MT18SD-H, Mitsui kinzoku) having a thickness of 3 μm (the carrier copper foil 7 was adhered to one surface thereof) in a thickness of 100 μm. On the opposite surface, and dried to fabricate a structure in which the carrier copper foil 7 - ultra-thin copper foil 6 - polymer resin layer 5 was laminated in this order. Subsequently, the carrier copper foil 7 and the polymer resin layer 5 on the wafer 1 are vacuum-laminated at 85 ° C to form a structure in which a copper foil laminate 1 - an ultra-thin copper foil 6 - a carrier copper foil 7 - Grain Adhesive Film 2 - Semiconductor Wafer 3 - Copper Projection 4 - Polymer Resin Layer 5 - Ultrathin Copper Foil 6 - The carrier copper foil 7 is laminated in this order, thereby sealing the semiconductor wafer 3 and the copper protrusions 4. <4> A photosensitive dry film resist 8 (KL1015, manufactured by Kolon Industries) having a thickness of 15 μm was laminated on the carrier copper foil 7 at 110 °C. A circular negative mask having a diameter of 150 μm was brought into contact with the photosensitive dry film photoresist 8 and irradiated with ultraviolet light (a light amount of 25 mJ/cm 2 ). The photosensitive dry film photoresist 8 was developed through a 1% sodium carbonate developer at 30 ° C to form a fixed pattern. Then, the carrier copper foil 7 and the ultra-thin copper foil 6 are etched by treating the etchant. At this time, the photosensitive dry film photoresist 8 having a pattern formed thereon is used as a protective layer of the carrier copper foil 7 and the ultra-thin copper foil 6, so that the same pattern as the photosensitive dry film photoresist 8 is also formed on the carrier. Copper foil 7 and ultra-thin copper foil 6 are used. <5> The ultra-thin copper foil 6 and the carrier copper foil 7 are separated, and the photosensitive dry film photoresist 8 and the carrier copper foil 7 laminated on the carrier copper foil 7 are removed. <6> The polymer resin layer 5 was developed through a 1% sodium carbonate developer at 30 °C. At this time, the ultra-thin copper foil 6 having the pattern formed thereon serves as a protective layer of the polymer resin layer 5, so that the same pattern as that of the ultra-thin copper foil 6 is also formed on the polymer resin layer 5, and is formed to have 200. Micron diameter through hole 9. <7> The polymer resin layer 5 on which the pattern was formed was thermally cured at a temperature of 100 ° C for 1 hour. <8> The etchant is treated to remove the ultra-thin copper foil 6 remaining on the polymer resin layer 5. <9> A 3% sodium hydroxide photoresist stripping liquid was sprayed onto the surface of the polymer resin layer 5 at a temperature of 50 °C. Thus, the copper protrusions 4 were exposed on the surface by removing the polymer resin layer to a depth of about 3 μm from the surface of the polymer resin layer 5, washing with water, and drying. At this time, the method of exposing the copper protrusions 4 is carried out in a continuous method of 10 seconds to 60 seconds per plate. <10> The polymer resin layer 5 having the copper protrusions 4 exposed on the surface thereof was thermally cured at a temperature of 200 ° C for 1 hour to fabricate an insulating layer. (3) Manufacturing of Multilayer Printed Circuit Board [0179] An insulating layer was produced in the order of the following steps <11> to <14>. <11> A copper film was vapor-deposited on the produced insulating layer using electroless copper plating, and heated at a temperature of 100 ° C for 30 minutes to improve adhesion to electroless copper plating. Then, a dry film (RY-5319, Hitachi Kasei) was laminated to form a pattern, electroplating was performed to form a circuit in the form of a metal pattern, and at the same time, the through holes 9 were filled with metal. <12> A 15 μm thick photosensitive dry film photoresist KL1015 (manufactured by Kolon Industries) was laminated on a circuit at 110 ° C, and a circular negative type photomask having a diameter of 30 μm and a photosensitive dry film were laminated. The photoresist is contacted and irradiated with ultraviolet light (amount of light of 25 mJ/cm 2 ). The photosensitive dry film photoresist was developed via a 1% sodium carbonate developer at 30 ° C to form a solder resist 10 having a fixed pattern. <13> The ultra-thin copper foil 6 and the carrier copper foil 7 are separated, and the ultra-thin copper foil 6 and the copper foil laminate 1 which is laminated under the ultra-thin copper foil 6 are removed. <14> The carrier copper foil 7 remaining under the insulating layer is removed by etching to complete the multilayer printed circuit board. Example 3 An insulating layer and a multilayer printed wiring board were produced in the same manner as in Example 1, except that the alkali-soluble resin synthesized in Production Example 2 was used instead of the manufacturing method of the insulating layer manufacturing method in Example 1. The alkali-soluble resin synthesized in Example 1. Example 4 An insulating layer and a multilayer printed wiring board were produced in the same manner as in Example 1 except that the alkali-soluble resin synthesized in Production Example 3 was used instead of the alkali-soluble resin synthesized in Production Example 1. Example 5 An insulating layer and a multilayer printed wiring board were produced in the same manner as in Example 1, except that the alkali-soluble resin synthesized in Production Example 4 was used instead of the manufacturing method of the insulating layer manufacturing method in Example 1. The alkali-soluble resin synthesized in Example 1. Example 6 An insulating layer and a multilayer printed circuit board were produced in the same manner as in Example 1, except that 16 g of an alkali-soluble resin synthesized by mixing in Production Example 1 was used during preparation of the polymer resin layer. MY-510 (manufactured by Huntsman) which is a heat-curable 5 g of a binder, and a polymer resin composition obtained as an inorganic filler of 43 g of SC2050 MTO (solid content: 70%, manufactured by Adamatech). Example 7 An insulating layer and a multilayer printed wiring board were produced in the same manner as in Example 6, except that the alkali-soluble resin synthesized in Production Example 2 was used instead of the alkali-soluble resin synthesized in Production Example 1. Example 8 An insulating layer and a multilayer printed wiring board were produced in the same manner as in Example 6, except that the alkali-soluble resin synthesized in Production Example 3 was used instead of the alkali-soluble resin synthesized in Production Example 1. Example 9 An insulating layer and a multilayer printed wiring board were produced in the same manner as in Example 6, except that the alkali-soluble resin synthesized in Production Example 4 was used instead of the alkali-soluble resin synthesized in Production Example 1. <Comparative Examples 1 to 3: Fabrication of Insulating Layer and Multilayer Printed Circuit Board> Comparative Example 1 Production of Insulating Layer [0187] An insulating layer was produced in the same manner as in Example 1, except that in the step <3>, A 100 μm thick die (LE-T17B, Ajinomoto) was used instead of the polymer resin layer of Example 1 and vacuum laminated at 120 ° C, and thermally cured at 170 ° C for 1 hour in step <7>, and in the step. In <9>, the surface of the thermosetting resin layer is ground with a grinder to expose the copper protrusions. [0188] In this case, the exposure method of the copper protrusions was performed in a batch method for 10 minutes to 20 minutes per plate, and it was confirmed that it took longer than the examples. Comparative Example 2 An insulating layer and a multilayer printed circuit board were produced in the same manner as in Example 1, except that in step <9>, a 3% sodium hydroxide photoresist stripping liquid was sprayed to a polymerization at a temperature of not more than 50 °C. On the surface of the resin layer, the polymer resin layer was subjected to desmear treatment according to a conventional method in the order of expansion (Atotech, Sweller-p 40%), etching (KMnO 4 9%, NaOH, 6%). And neutralizing (H 2 SO 4 , 9%), and thus exposing the copper protrusions to the surface via removal of the polymer resin layer to a depth of about 3 microns from the surface of the polymer resin layer. [0190] In this case, the desmear method for exposing the copper protrusions is performed in a continuous batch method of 5 minutes to 10 minutes per plate only in the etching step. Therefore, it was confirmed that, in comparison with the examples, it took not only a long time, but also a harmful chemical substance such as potassium permanganate had to be added, but it was also difficult to adjust the thickness of the polymer resin layer. Comparative Example 3 An insulating layer was produced in the same manner as in Example 1 except that the step of subjecting the polymer resin layer to main heat curing at a temperature of 100 ° C for 1 hour in the step <7> was omitted. At this time, in the case of Comparative Example 3, it was confirmed that the polymer resin layer was completely removed within 10 seconds after the sodium hydroxide photoresist was peeled off, and thus there was a copper protrusion and a circuit below. Technical limitations. That is, in the case of Comparative Example 3, in which the step of curing the polymer resin layer is not performed before the stripping liquid is sprayed, it is difficult to control the extent to which the polymer resin layer is removed, and it is not suitable for the exposed portion only. The copper protrusions are on the surface of the polymer resin layer.

[0194] 1：矽晶圓或銅箔積層板 2：可脫黏之暫時性黏著劑或晶粒黏合膜 3：半導體晶片 4：銅突出物 5：聚合物樹脂層 6：超薄銅箔 7：載體銅箔 8：光敏性乾膜光阻劑 9：通孔 10：焊劑光阻劑 ＜1＞-＜14＞：方法進行之順序[0194] 1: 矽 wafer or copper foil laminate 2: debondable temporary adhesive or die adhesion film 3: semiconductor wafer 4: copper protrusion 5: polymer resin layer 6: ultra-thin copper foil 7 : Carrier copper foil 8: Photosensitive dry film photoresist 9: Through hole 10: Solder photoresist <1>-<14>: The order of the method

[0170] 　　圖1圖示實施例1之絕緣層之製造方法。 　　圖2圖示實施例1之多層印刷電路板之製造方法。 　　圖3圖示實施例2之絕緣層之製造方法。 　　圖4圖示實施例2之多層印刷電路板之製造方法。1 illustrates a method of manufacturing the insulating layer of Embodiment 1. 2 illustrates a method of manufacturing the multilayer printed circuit board of Embodiment 1. Fig. 3 is a view showing a method of manufacturing the insulating layer of the second embodiment. 4 illustrates a method of manufacturing the multilayer printed circuit board of Embodiment 2.

Claims (20)

一種製造絕緣層之方法，包括以下步驟： 　　以包含鹼溶性樹脂及可熱固化黏合劑之聚合物樹脂層，密封半導體元件，該半導體元件具有形成於其表面上之金屬突出物； 　　於該聚合物樹脂層上形成圖形，同時保持具有該金屬突出物形成於其表面上之該半導體元件被密封之狀態； 　　首次(primarily curing)固化有圖形形成於其中的該聚合物樹脂層； 　　以鹼性水溶液蝕刻該經固化聚合物樹脂層之表面，以曝露該金屬突出物；及 　　在該金屬突出物被曝露的狀態下，二次固化( secondarily curing)該聚合物樹脂層。A method of manufacturing an insulating layer, comprising the steps of: sealing a semiconductor element having a metal protrusion formed on a surface thereof with a polymer resin layer comprising an alkali-soluble resin and a heat-curable adhesive; Forming a pattern on the resin layer while maintaining the state in which the semiconductor element having the metal protrusion formed on the surface thereof is sealed; the polymer resin layer in which the pattern is formed is cured first; curing with an alkaline aqueous solution The surface of the cured polymer resin layer is exposed to expose the metal protrusion; and the polymer resin layer is secondarily cured in a state where the metal protrusion is exposed. 如申請專利範圍第1項之製造絕緣層之方法，其中於該聚合物樹脂層上形成圖形之步驟包含： 　　於該聚合物樹脂層上形成圖形層；及 　　對由該圖形層曝露之該聚合物樹脂層以鹼顯影。The method of producing an insulating layer according to claim 1, wherein the step of forming a pattern on the polymer resin layer comprises: forming a pattern layer on the polymer resin layer; and the polymer exposed by the pattern layer The resin layer is developed with alkali. 如申請專利範圍第2項之製造絕緣層之方法，其中於該聚合物樹脂層上形成圖形層之步驟包含以下步驟： 　　使於其之一表面附著有載體膜之金屬層之對立表面附著至聚合物樹脂層； 　　於該載體膜上形成圖形化光敏性樹脂層； 　　移除經該圖形化光敏性樹脂層曝露之該載體膜及該金屬層，以形成圖形化金屬層；及 　　由該圖形化金屬層分離及移除該載體膜。A method of producing an insulating layer according to claim 2, wherein the step of forming a pattern layer on the polymer resin layer comprises the step of: attaching an opposite surface of a metal layer having a carrier film attached to one surface thereof to the polymerization Forming a patterned photosensitive resin layer on the carrier film; removing the carrier film and the metal layer exposed through the patterned photosensitive resin layer to form a patterned metal layer; and forming the patterned metal The layer separates and removes the carrier film. 如申請專利範圍第3項之製造絕緣層之方法，其中於使於其之一表面附著有載體膜之金屬層之對立表面附著至包含鹼溶性樹脂及可熱固化之黏合劑之聚合物樹脂層之步驟中， 　　在該載體膜與該金屬層間之附著力比在該聚合物樹脂層與該金屬層間之附著力小。The method for producing an insulating layer according to claim 3, wherein the opposite surface of the metal layer to which the carrier film is adhered on one surface thereof is attached to the polymer resin layer containing the alkali-soluble resin and the heat-curable adhesive. In the step, the adhesion between the carrier film and the metal layer is smaller than the adhesion between the polymer resin layer and the metal layer. 如申請專利範圍第1項之製造絕緣層之方法，其中 　　該鹼溶性樹脂包含二或更多個酸官能基，及二或更多個經胺基取代之環狀醯亞胺官能基。A method of producing an insulating layer according to claim 1, wherein the alkali-soluble resin comprises two or more acid functional groups, and two or more amine-substituted cyclic quinone imine functional groups. 如申請專利範圍第5項之製造絕緣層之方法，其中 　　經胺基取代之該環狀醯亞胺官能基包含以下化學式1代表之官能基： 其中，於化學式1中，R 1為具有1至10個碳原子之伸烷基或烯基，及“*”意指一鍵結點。 A method of producing an insulating layer according to claim 5, wherein the cyclic quinone imine functional group substituted with an amine group comprises a functional group represented by the following Chemical Formula 1: Here, in Chemical Formula 1, R 1 is an alkylene group or an alkenyl group having 1 to 10 carbon atoms, and "*" means a one-bonded node. 如申請專利範圍第1項之製造絕緣層之方法，其中 　　經由環狀不飽和醯亞胺化合物與胺化合物之反應製造該鹼溶性樹脂，且該環狀不飽和醯亞胺化合物及該胺化合物之至少一者包含取代於其末端之酸官能基。The method for producing an insulating layer according to the first aspect of the invention, wherein the alkali-soluble resin is produced by reacting a cyclic unsaturated quinone imine compound with an amine compound, and the cyclic unsaturated quinone compound and the amine compound At least one of the acid functional groups substituted at its terminus. 如申請專利範圍第7項之製造絕緣層之方法，其中該胺化合物包含選自經胺基取代之羧酸化合物及包含二或更多個胺基之多官能性胺化合物所組成群組中之至少一者。The method for producing an insulating layer according to claim 7, wherein the amine compound comprises a group selected from the group consisting of an amino group-substituted carboxylic acid compound and a polyfunctional amine compound containing two or more amine groups. At least one. 如申請專利範圍第1項之製造絕緣層之方法，其中該鹼溶性樹脂包括至少一個以下化學式3代表之重複單元，及至少一個以下化學式4代表之重複單元： 其中，於化學式3中，R 2為一直接鍵、具有1至20個碳原子之伸烷基、具有1至20個碳原子之烯基、或具有6至20個碳原子之伸芳基，且“*”意指一鍵結點； 其中，於化學式4中，R 3為一直接鍵、具有1至20個碳原子之伸烷基、具有1至20個碳原子之烯基、或具有6至20個碳原子之伸芳基， 　　R 4為-H、-OH、-NR 5R 6、鹵素、或具有1至20個碳原子之烷基， 　　R 5及R 6可各自獨立為氫、具有1至20個碳原子之烷基、或具有6至20個碳原子之芳基，及 　　“*”意指一鍵結點。 The method for producing an insulating layer according to claim 1, wherein the alkali-soluble resin comprises at least one repeating unit represented by the following Chemical Formula 3, and at least one repeating unit represented by the following Chemical Formula 4: Wherein, in Chemical Formula 3, R 2 is a direct bond, an alkylene group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, or an extended aryl group having 6 to 20 carbon atoms, And "*" means a key node; Wherein, in Chemical Formula 4, R 3 is a direct bond, an alkylene group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, or an extended aryl group having 6 to 20 carbon atoms; R 4 is -H, -OH, -NR 5 R 6 , halogen, or an alkyl group having 1 to 20 carbon atoms, and R 5 and R 6 may each independently be hydrogen, an alkyl group having 1 to 20 carbon atoms. Or an aryl group having 6 to 20 carbon atoms, and "*" means a one-bonded node. 如申請專利範圍第9項之製造絕緣層之方法，其中該鹼溶性樹脂係經由使包含以下化學式5代表之重複單元之聚合物、以下化學式6代表之胺、及以下化學式7代表之胺反應而被製造： 其中，於化學式5至7中，R 2至R 4為與申請專利範圍第9項中所界定者相同，且“*”意指一鍵結點。 The method for producing an insulating layer according to claim 9, wherein the alkali-soluble resin is reacted by a polymer comprising a repeating unit represented by the following Chemical Formula 5, an amine represented by the following Chemical Formula 6, and an amine represented by the following Chemical Formula 7; Made of: Here, in Chemical Formulas 5 to 7, R 2 to R 4 are the same as those defined in Item 9 of the patent application, and "*" means a one-bonded node. 如申請專利範圍第9項之製造絕緣層之方法，其中該鹼溶性樹脂係經由使以下化學式8代表之化合物與以下化學式9代表之化合物反應而被製造： 其中，於化學式8及9中，R 2至R 4為與申請專利範圍第9項中所界定者相同。 The method for producing an insulating layer according to claim 9, wherein the alkali-soluble resin is produced by reacting a compound represented by the following Chemical Formula 8 with a compound represented by the following Chemical Formula 9: Among them, in Chemical Formulas 8 and 9, R 2 to R 4 are the same as those defined in Item 9 of the patent application. 如申請專利範圍第1項之製造絕緣層之方法，其中該聚合物樹脂層包含可熱固化之黏合劑，其量為1至150重量份，以100重量份之該鹼溶性樹脂為基準。The method of producing an insulating layer according to the first aspect of the invention, wherein the polymer resin layer comprises a heat-curable adhesive in an amount of from 1 to 150 parts by weight based on 100 parts by weight of the alkali-soluble resin. 如申請專利範圍第2項之製造絕緣層之方法，其中於對由該圖形層曝露之該聚合物樹脂層以鹼顯影之步驟之後，以由該圖形層曝露之該聚合物樹脂層之總重量為基準，有0.1重量%至85重量%保留。The method of producing an insulating layer according to claim 2, wherein after the step of alkali developing the polymer resin layer exposed by the pattern layer, the total weight of the polymer resin layer exposed by the pattern layer is used. For the reference, there is a retention of from 0.1% by weight to 85% by weight. 如申請專利範圍第1項之製造絕緣層之方法，其中該聚合物樹脂層包含無機填料，其量為100重量份或更高，以100重量份之該鹼溶性樹脂與該可熱固化黏合劑之總重量為基準。The method for producing an insulating layer according to the first aspect of the invention, wherein the polymer resin layer comprises an inorganic filler in an amount of 100 parts by weight or more, and 100 parts by weight of the alkali-soluble resin and the heat-curable adhesive; The total weight is based on the benchmark. 如申請專利範圍第1項之製造絕緣層之方法，其中該首次固化步驟為於50℃至150℃之溫度進行0.1小時至2小時。A method of producing an insulating layer according to claim 1, wherein the first curing step is carried out at a temperature of from 50 ° C to 150 ° C for from 0.1 hour to 2 hours. 如申請專利範圍第1項之製造絕緣層之方法，其中該二次固化步驟為於150℃至250℃之溫度進行0.1小時至10小時。The method of producing an insulating layer according to claim 1, wherein the secondary curing step is performed at a temperature of from 150 ° C to 250 ° C for from 0.1 hour to 10 hours. 一種製造多層印刷電路板之方法，包括於如申請專利範圍第1至16項中任一項之方法所製造之該絕緣層上形成金屬圖形層之步驟。A method of producing a multilayer printed circuit board, comprising the step of forming a metal pattern layer on the insulating layer produced by the method of any one of claims 1 to 16. 如申請專利範圍第17項之製造多層印刷電路板之方法，其中該絕緣層包含該鹼溶性樹脂與該可熱固化黏合劑之經固化產物。A method of producing a multilayer printed circuit board according to claim 17, wherein the insulating layer comprises the alkali-soluble resin and the cured product of the heat-curable adhesive. 如申請專利範圍第17項之製造多層印刷電路板之方法，其中於該絕緣層上形成金屬圖形層之步驟包含以下步驟: 　　於該絕緣層上形成金屬薄膜； 　　於該金屬薄膜上形成有圖形形成於其上的光敏性樹脂層； 　　沉積金屬於由該光敏性樹脂層圖形曝露之該金屬薄膜上；及 　　移除該光敏性樹脂層及移除經曝露之該金屬薄膜。The method of manufacturing a multilayer printed circuit board according to claim 17, wherein the step of forming a metal pattern layer on the insulating layer comprises the steps of: forming a metal film on the insulating layer; forming a pattern on the metal film; a photosensitive resin layer thereon; depositing a metal on the metal film exposed by the photosensitive resin layer pattern; and removing the photosensitive resin layer and removing the exposed metal film. 如申請專利範圍第17項之製造多層印刷電路板之方法，其中該金屬圖形層經由金屬突出物連接至半導體元件。A method of manufacturing a multilayer printed circuit board according to claim 17, wherein the metal pattern layer is connected to the semiconductor element via a metal protrusion.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080099727A1 (en) * 2001-01-24 2008-05-01 Nichia Corporation Light Emitting Diode, Optical Semiconductor Device, Epoxy Resin Composition Suited for Optical Semiconductor Device, and Method for Manufacturing the Same
TW201336893A (en) * 2012-01-20 2013-09-16 Asahi Kasei E Materials Corp Resin composition, layered product, multilayered printed wiring board, multilayered flexible wiring board, and process for producing same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497757A (en) * 1972-05-11 1974-01-23
JPH05226243A (en) * 1991-07-09 1993-09-03 Oki Electric Ind Co Ltd Manufacture of circuit board for high-speed element mounting
JPH06268378A (en) * 1993-03-12 1994-09-22 Oki Electric Ind Co Ltd Formation method for via hole of multilayer interconnection board
KR970018396A (en) * 1995-09-11 1997-04-30 김광호 Formation method of multilayer wiring
JP2000124217A (en) * 1998-10-14 2000-04-28 Murata Mfg Co Ltd Structure of wiring pattern and forming method of the wiring pattern
JP2002317022A (en) * 2001-04-20 2002-10-31 Nippon Kayaku Co Ltd Resin composition, solder resist resin composition, and cured products of compositions
DE60205664T2 (en) * 2001-12-06 2006-03-02 Huntsman Advanced Materials (Switzerland) Gmbh HEAT-CURABLE RESIN COMPOSITION
JP2003264370A (en) * 2002-03-11 2003-09-19 Kyocera Chemical Corp Multilayered printed wiring board, its manufacturing method and resin sheet with copper foil for printed wiring board for use in the method
JP4575071B2 (en) * 2004-08-02 2010-11-04 新光電気工業株式会社 Manufacturing method of electronic component built-in substrate
JP5298462B2 (en) * 2006-06-06 2013-09-25 日立化成株式会社 Method for producing curing agent having acidic substituent and unsaturated maleimide group, thermosetting resin composition, prepreg and laminate
WO2007142140A1 (en) * 2006-06-06 2007-12-13 Hitachi Chemical Company, Ltd. Method for producing curing agent having acidic substituent and unsaturated maleimide group, thermosetting resin composition, prepreg, and laminate
CN101460539A (en) * 2006-06-06 2009-06-17 日立化成工业株式会社 Method for producing curing agent having acidic substituent and unsaturated maleimide group, thermosetting resin composition, prepreg, and laminate
KR101526582B1 (en) * 2009-03-18 2015-06-05 엘지이노텍 주식회사 Printed circuit board and method for fabricating the same
JP6010340B2 (en) * 2012-05-17 2016-10-19 太陽インキ製造株式会社 Printed wiring board and printed wiring board manufacturing method
JP2014216406A (en) * 2013-04-24 2014-11-17 凸版印刷株式会社 Method of manufacturing core substrate of multilayer lamination wiring board, core substrate of multilayer lamination wiring board, and multilayer lamination wiring board
JP6306296B2 (en) * 2013-07-09 2018-04-04 太陽インキ製造株式会社 Photosensitive thermosetting resin composition and flexible printed wiring board
JP6388450B2 (en) * 2013-08-13 2018-09-12 太陽インキ製造株式会社 Alkali development type photocurable thermosetting resin composition and printed wiring board using the same
CN107003607B (en) * 2014-12-04 2021-05-28 日产化学工业株式会社 Positive photosensitive resin composition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080099727A1 (en) * 2001-01-24 2008-05-01 Nichia Corporation Light Emitting Diode, Optical Semiconductor Device, Epoxy Resin Composition Suited for Optical Semiconductor Device, and Method for Manufacturing the Same
TW201336893A (en) * 2012-01-20 2013-09-16 Asahi Kasei E Materials Corp Resin composition, layered product, multilayered printed wiring board, multilayered flexible wiring board, and process for producing same
TW201531498A (en) * 2012-01-20 2015-08-16 Asahi Kasei E Materials Corp Resin composition, layered product, multilayer printed wiring board, multilayer flexible wiring board and manufacturing method of the same

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