TWI636594B - Method of manufacturing semiconductor light emitting device - Google Patents
Method of manufacturing semiconductor light emitting device Download PDFInfo
- Publication number
- TWI636594B TWI636594B TW104104577A TW104104577A TWI636594B TW I636594 B TWI636594 B TW I636594B TW 104104577 A TW104104577 A TW 104104577A TW 104104577 A TW104104577 A TW 104104577A TW I636594 B TWI636594 B TW I636594B
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- TW
- Taiwan
- Prior art keywords
- sealing material
- emitting device
- semiconductor light
- hardening
- type sealing
- Prior art date
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- 125000000687 hydroquinonyl group Chemical group C1(O)=C(C=C(O)C=C1)* 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920006294 polydialkylsiloxane Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- KSBAEPSJVUENNK-UHFFFAOYSA-L tin(ii) 2-ethylhexanoate Chemical compound [Sn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O KSBAEPSJVUENNK-UHFFFAOYSA-L 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229940098697 zinc laurate Drugs 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- LYSLZRDZOBAUFL-UHFFFAOYSA-L zinc;4-tert-butylbenzoate Chemical compound [Zn+2].CC(C)(C)C1=CC=C(C([O-])=O)C=C1.CC(C)(C)C1=CC=C(C([O-])=O)C=C1 LYSLZRDZOBAUFL-UHFFFAOYSA-L 0.000 description 1
- JDLYKQWJXAQNNS-UHFFFAOYSA-L zinc;dibenzoate Chemical compound [Zn+2].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 JDLYKQWJXAQNNS-UHFFFAOYSA-L 0.000 description 1
- GPYYEEJOMCKTPR-UHFFFAOYSA-L zinc;dodecanoate Chemical compound [Zn+2].CCCCCCCCCCCC([O-])=O.CCCCCCCCCCCC([O-])=O GPYYEEJOMCKTPR-UHFFFAOYSA-L 0.000 description 1
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 1
Classifications
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48237—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
一種製造方法,其係包含基板與元件和密封材作為構成構件的半導體發光裝置之製造方法,包括:於基板上設置元件之第1步驟,將選自由加成聚合型密封材及聚縮合型密封材所成之群的至少一種硬化前之密封材(i),以覆蓋元件之方式,灌注至基板上之第2步驟,使所灌注的硬化前之密封材(i)硬化之第3步驟,與將硬化前的聚縮合型密封材(ii),灌注至已覆蓋元件的硬化後之密封材(i)之上,藉由使所灌注的硬化前之聚縮合型密封材(ii)硬化,而層合密封材之第4步驟;以及藉由該製造方法所製造之半導體發光裝置,層合2層以上的密封材所成之半導體發光裝置。
Description
本發明關於半導體發光裝置之製造方法。
作為半導體發光裝置之製造方法,已知例如一種包含元件的密封之製造方法,其包含:於基板上設置元件之步驟,將硬化前之聚縮合型密封材,以覆蓋元件之方式灌注至基板上之步驟,與使所灌注的硬化前之聚縮合型密封材硬化之步驟(專利文獻1、非專利文獻1)。
專利文獻1:特開2007-112975號公報
非專利文獻1:AZMAX股份有限公司網頁「聚倍半矽氧烷‧T-樹脂」
<URL:http://www.azmax.co.jp/cnt_catalog_chemical/pdf/attach_20110517_135825.pdf>
然而,由如此之方法所得的半導體發光裝置,係在熱衝撃耐性之點未必可充分滿足者。
本發明包含以下[1]~[13]記載之發明。
[1]一種製造方法,其係包含基板與元件和密封材作為構成構件的半導體發光裝置之製造方法,包括:於基板上設置元件之第1步驟,將選自由加成聚合型密封材及聚縮合型密封材所成之群的至少一種硬化前之密封材(i),以覆蓋元件之方式,灌注至基板上之第2步驟,與使所灌注的硬化前之密封材(i)硬化之第3步驟,與將硬化前的聚縮合型密封材(ii),灌注至已覆蓋元件的硬化後之密封材(i)之上,藉由使所灌注的硬化前之聚縮合型密封材(ii)硬化,而層合密封材之第4步驟。
[2]如上述[1]記載之製造方法,其中密封材(i)係加成聚合型密封材。
[3]如上述[1]記載之製造方法,其中密封材(i)係聚縮合型密封材。
[4]如上述[3]記載之製造方法,其中用於第2步驟的硬化前之密封材(i),係包含具有以式(1)表示的二烷基矽氧烷構造之樹脂X的聚縮合型密封材;
(式(1)中,R3各自獨立地表示烷基,n表示5~4000之整數)。
[5]如上述[4]記載之製造方法,其中n為5~1000之整數。
[6]如上述[1]~[5]中任一項記載之製造方法,其中用於第4步驟的硬化前之聚縮合型密封材(ii),包含具有以式(2)表示的有機聚矽氧烷構造之樹脂A;
(式(2)中,R1各自獨立地表示烷基,R2各自獨立地表示烷氧基或羥基,p1、q1、a1及b1表示成為[p1+b1×q1]:[a1×q1]=1:0.25~9之正數)。
[7]如[1]~[6]中任一項記載之製造方法,其中第4步驟係將與於第3步驟所得的硬化後之密封材(i)為物性不同的硬化後之聚縮合型密封材(ii)予以層合之步驟。
[8]如上述[7]記載之製造方法,其中物性係將施加於
第4步驟所層合的硬化後之聚縮合型密封材(ii)的應力,以第3步驟所得的硬化後之密封材(i)緩和之物性。
[9]如上述[8]記載之製造方法,其中第3步驟所得的硬化後之密封材(i),係具有比第4步驟所層合的硬化後之聚縮合型密封材(ii)更高的應力緩和性。
[10]如上述[1]~[9]中任一項記載之製造方法,其中第3步驟所得的硬化後之密封材(i),係與第4步驟所層合的硬化後之聚縮合型密封材(ii)具有密著性。
[11]如上述[1]~[10]中任一項記載之製造方法,其中半導體發光裝置係紫外線LED。
[12]如上述[1]~[11]中任一項記載之製造方法,其中藉由重複第4步驟,而得到層合有3層以上的密封材之半導體發光裝置。
[13]一種半導體發光裝置,其係藉由如上述[1]~[12]中任一項之製造方法所製造之半導體發光裝置,層合2層以上的密封材所成。
由本發明之製造方法所得之半導體發光裝置係熱衝撃耐性優異。
1‧‧‧經第3步驟硬化後之密封材(i)
2‧‧‧經第4步驟硬化後之聚縮合型密封材(ii)
3‧‧‧基板
4‧‧‧元件
5‧‧‧電極
6‧‧‧經第3步驟硬化後之密封材(i)的厚度
7‧‧‧經第4步驟硬化後之聚縮合型密封材(ii)的厚度
8‧‧‧金屬線
圖1係藉由本發明之製造方法所得之覆晶型且COB型半導體發光裝置之模型圖。
圖2係藉由本發明之製造方法所得之面朝上型且SMD型半導體發光裝置之模型圖。
以下,詳細說明本發明。再者,本發明中所謂半導體發光裝置為熱衝撃耐性優異,就是指當半導體發光裝置暴露於急劇溫度變化的環境時,例如在密封材發生龜裂或在密封材與基板界面之間發生剝離的情況少者。
由本發明之製造方法所得之半導體發光裝置係包含基板與元件和密封材作為構成構件。
作為基板,只要是一般作為半導體發光裝置之基板使用者即可,可使用以尼龍、環氧樹脂、LCP等之樹脂、氧化鋁、氮化鋁、LTCC等之陶瓷所構成者。形狀例如可使用如圖1之將元件4設置在以陶瓷等的材質所形成的平面基板3上者,如圖2之為了提高光取出效率而進而設置有反射器5者。
於基板上,通常施以用於與所搭載的元件電性連接之電極。
作為元件,只要是一般作為半導體發光元件使用者即
可,例如可舉出一般稱為LED的藍色發光二極體、紅色發光二極體、綠色發光二極體、白色發光二極體、紫外線發光二極體。此等LED例如係藉由在藍寶石、氮化鋁等之上,以MOCVD法、HVPE法等使AlInGaP、InGaN、AlGaN等之III-V族半導體成長而製造。元件係可在一個基板上設置一個至複數個。元件之設置係使用MOCVD成長面向基板側之覆晶方式或反向的面朝上方式。覆晶方式時,藉由焊料與基板上的電極電性連接。面朝上方式時,使用金等的金屬線配線來連接。於紫外LED中,從光取出之觀點來看,多採用覆晶方式。
於本發明中,作為密封材,階段地併用選自由加成聚合型密封材及聚縮合型密封材所成之群的至少一種密封材(i)與聚縮合型密封材(ii)。所謂的加成聚合型,就藉由在氫矽烷基與碳間雙鍵,藉由加成反應進行聚合之密封材。所謂的聚縮合型密封材,就是將鍵結於矽原子的羥基與鍵結於另一矽原子的烷氧基或羥基,伴隨脫醇或脫水進行聚縮合之密封材。作為聚縮合型密封材,例如可舉出東麗‧道康寧公司「電子用聚矽氧型錄」2010年10月發行等中記載之包含聚矽氧烷的密封材。亦有藉由加成聚合型與聚縮合之反應同時發生而聚合的雙組分型密封材,但於本發明中作為加成聚合型之一種來對待。
本發明之第2步驟所用的密封材係密封材(i),第4步
驟所用的密封材係聚縮合型密封材(ii)。如後述,所謂的密封材(i)與聚縮合型密封材(ii),較佳為硬化後之物性不同者。如此之物性,更佳為將施加於硬化後之聚縮合型密封材(ii)的應力,以硬化後之密封材(i)來緩和之物性。以下說明如此較佳的密封材(i)及聚縮合型密封材(ii)。
於密封材(i)之中,作為加成聚合型密封材,例如可舉出甲基系聚矽氧樹脂密封材、苯基系聚矽氧樹脂密封材、甲基苯基系聚矽氧樹脂密封材,其中甲基系聚矽氧樹脂密封材由於硬化後之樹脂硬度比較柔軟而較佳。
作為此等之加成聚合型密封材,亦可使用一般市售的密封材。具體地於東麗‧道康寧公司製的甲基系聚矽氧樹脂密封材中,可舉出OE-6250、OE-6336、OE-6301、OE-6351,於同公司製苯基系或甲基苯基系聚矽氧樹脂密封材中,可舉出OE-6450、OE-6520、OE-6550、OE-6631、OE-6636、OE-6635、OE-6630、OE-6665N,於信越化學公司製的甲基系聚矽氧樹脂中,可舉出IVS4321、XE14-C2042、IVS4542、IVS4546、IVS4622、IVS4632、IVS4742、IVS4752、IVSG3445、IVSG5778、IVSG0810,於同公司製苯基系或甲基苯基系聚矽氧樹脂密封材中,可舉出XE14-C2860,XE14-C3450,於信越化學公司製之甲基聚矽氧樹脂密封材中,可舉出KER-6020、KER-6150、KER-6075、KER-2700、KER-2600、KER-2500、KER-
2450、KER-2400、KER-2300,於同公司製苯基系或甲基苯基系聚矽氧樹脂密封材中,可舉出SCR-1011、SCR-1012、SCR-1016、ASP-1111、ASP-1120、ASP-1031、ASP-1040、KER-6150、KER-6075、KER-6100等。
作為雙組分型密封材,於橫濱橡膠公司製的甲基系聚矽氧樹脂密封材中,可舉出YSL-300F、YSL-350F,於同公司製苯基系聚矽氧樹脂中,可舉出YSH-600F、YSH-650F等。
於密封材(i)之中,作為聚縮合型密封材,較佳為包含具有以前述式(1)表示的二烷基矽氧烷構造之樹脂X的密封材。
於樹脂X之中,更佳為在兩末端具有矽烷醇基的聚二烷基矽氧烷樹脂Y1。
又,可舉出樹脂Y1與以式(3)表示的有機矽氧化合物單體之混合物的樹脂組成物Y2、或與將樹脂Y1的末端矽烷醇基與以式(3)表示的單體予以脫醇或水解縮合而得之寡聚物之混合物的樹脂組成物Y3。
再者,可舉出將樹脂Y1的末端矽烷醇基與以式(3)表示的單體以予縮合反應而得之改性聚矽氧烷樹脂Y4、或將樹脂Y1的末端矽烷醇基與以式(3)表示的單體予以脫醇或水解縮合而得之寡聚物進行縮合反應而得之改性聚矽氧烷樹脂Y5。
R4 (4-m)Si(R5)m‧‧‧‧‧‧(3)
(式(3)中,R4表示烷基,R5表示烷氧基、羥基或鹵素
原子,m表示1~4之正數)。
作為R4所示的烷基,可為直鏈狀,也可為支鏈狀,亦可具有環狀構造,較佳為直鏈狀或支鏈狀的烷基,更佳為直鏈狀的烷基。該烷基的碳數係沒有限定,但較佳為1~10,更佳為1~6,尤佳為1~3。
R5為烷氧基時,作為該烷氧基,可為直鏈狀,也可為支鏈狀,亦可具有環狀構造,較佳為直鏈狀或支鏈狀的烷氧基,更佳為直鏈狀的烷氧基。該烷氧基的碳數係沒有限定,但較佳為1~4。
式(1)所記載的樹脂X中之n較佳為5~3000之範圍,更佳為5~1500之範圍,尤佳為5~1000之範圍,特佳為5~800之範圍,極佳為5~500之範圍。n若滿足該範圍,則應力緩和性與阻氣性優異。
作為在兩末端具有矽烷醇基的聚二烷基矽氧烷樹脂Y1,可舉出Gelest公司製的DMS-S12、DMS-S14、DMS-S15、DMS-S21、DMS-S27、DMS-S31、DMS-S32、DMS-S33、DMS-S35、DMS-S42、DMS-S45、DMS-S51、信越化學公司製的X-21-5841、KF-9701、旭化成WACKER SILICONE公司製的FINISH WA 62M、CT 601M、CT 5000M、CT 6000M等。
作為以式(3)表示的單體之具體例,於m=1之化合物中,可舉出三甲基甲氧基矽烷、三甲基乙氧基矽烷、三甲基異丙氧基矽烷、三甲基矽烷醇、三甲基氯矽烷、三乙基甲氧基矽烷、三乙基乙氧基矽烷、三乙基異丙氧基矽烷、
三乙基矽烷醇、三乙基氯矽烷,於m=2之化合物中,可舉出二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、二甲基二異丙氧基矽烷、二甲基二氯矽烷、二乙基二甲氧基矽烷、二乙基二乙氧基矽烷、二乙基二異丙氧基矽烷、二乙基二氯矽烷、二異丙基二甲氧基矽烷、二異丙基二乙氧基矽烷、二異丙基二異丙氧基矽烷、二異丙基二氯矽烷,於m=3之化合物中,可舉出甲基三甲氧基矽烷、甲基三乙氧基矽烷、甲基三異丙氧基矽烷、甲基三氯矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、乙基三異丙氧基矽烷、乙基三氯矽烷,於m=4之化合物中,可舉出四甲氧基矽烷,四乙氧基矽烷,四異丙氧基矽烷、四氯矽烷。
作為將以式(3)表示的單體予以脫醇或水解縮合而得之寡聚物,例如可舉出在酸、鹼或金屬觸媒之存在下,視需要添加水,於無溶劑中或有機溶劑中,藉由脫醇反應或脫水縮合反應或其兩者而得之分子量2000以下的縮合物。
將在兩末端具有矽烷醇基的樹脂Y1、與以式(3)表示的單體或將此脫醇或水解縮合而得之寡聚物之縮合而成的改性聚矽氧烷樹脂Y4或Y5,亦可在酸、鹼或金屬觸媒之存在下,視需要添加水,於無溶劑中或有機溶劑中,藉由脫醇反應或脫水縮合反應或其兩者而得。
此處,作為酸,例如可使用鹽酸、硫酸、硝酸、磷酸等之無機酸、甲酸、醋酸、草酸、檸檬酸、丙酸、丁酸、乳酸、琥珀酸等之有機酸。作為鹼,可使用氫氧化銨、氫
氧化四甲銨、氫氧化四乙銨等。作為金屬觸媒,可使用異丙氧化鋁、異丙氧化鋯等之金屬烷氧化物、乙醯丙酮鋯等之金屬乙醯丙酮化物、辛酸鋅、苯甲酸鋅、對第三丁基苯甲酸鋅、月桂酸鋅、硬脂酸鋅、辛酸錫等。
此等係在使用樹脂Y1、樹脂組成物Y2及Y3、以及改性聚矽氧烷樹脂Y4及Y5作為密封材(i)時,亦可使用作為後述第3步驟中的硬化用觸媒。
作為聚縮合型密封材(ii),較佳為包含具有以前述式(2)表示的有機聚矽氧烷構造之樹脂A的密封材。
更佳為聚縮合型密封材(ii)進一步包含具有以式(4)表示的有機聚矽氧烷構造之寡聚物B,樹脂A與寡聚物B之混合比率係樹脂A:寡聚物B=100:0.1~20(質量比)。藉由以樹脂A作為主成分,可提高對於發光元件之發光所伴隨發生的發熱之耐性,或可抑制因自紫外線LED所發出的紫外光所致的密封材之劣化。
(式(4)中,R1及R2表示與前述式(2)相同的定義,p2、q2、r2、a2及b2表示成為[a2×q2]/[(p2+b2×q2)×a2×q2+(r2+q2)]:=0~0.3時的0以上之數)。
作為R1所表示的烷基,可為直鏈狀,也可為支鏈狀,亦可具有環狀構造,較佳為直鏈狀或支鏈狀的烷基,更佳為直鏈狀的烷基。該烷基的碳數係沒有限定,但較佳為1~10,更佳為1~6,尤佳為1~3。
R2各自獨立地表示烷氧基或羥基。
R2為烷氧基時,作為該烷氧基,可為直鏈狀,也可為支鏈狀,亦可具有環狀構造,較佳為直鏈狀或支鏈狀的烷氧基,更佳為直鏈狀的烷氧基。該烷氧基的碳數係沒有限定,但較佳為1~4。
複數的R1及R2係各自可為同種之基,也可為互相不同之基。
作為樹脂A,較佳為具有選自由甲基及乙基所成之群的1種以上作為R1,具有選自由甲氧基、乙氧基、異丙氧基及羥基所成之群的1種以上作為R2者,更佳為具有選自由甲基及乙基所成之群的1種以上作為R1,具有選自由甲氧基、乙氧基及異丙氧基所成之群的1種以上與羥基作為R2者。
樹脂A的重量平均分子量(Mw)通常1500以上8000以下。由於樹脂A的重量平均分子量為該範圍內,得到阻氣性更優異的聚縮合型密封材(ii)。樹脂A的重量平均分子量較佳為1500以上7000以下,更佳為2000以上5000
以下。
樹脂A例如係可以對應於上述的各重複單位,具有能生成矽氧烷鍵結的官能基之有機矽化合物作為起始原料來合成。作為「能生成矽氧烷鍵結的官能基」,可舉出例如鹵素原子、羥基、烷氧基。作為有機矽化合物,例如可以有機三鹵矽烷、有機三烷氧基矽烷等作為起始原料。樹脂A例如係可以將此等之起始原料,以對應於各重複單位的存在比之比,藉由水解縮合法使反應而合成。樹脂A係可使用工業上市售的矽氧樹脂、烷氧基寡聚物等。
作為寡聚物B,較佳具有選自由甲基及乙基所成之群的1種以上作為R1,具有選自由甲氧基、乙氧基、異丙氧基及羥基所成之群的1種以上作為R2者,更佳具有選自由甲基及乙基所成之群的1種以上作為R1,具有選自由甲氧基、乙氧基及異丙氧基所成之群的1種以上作為R2者。
寡聚物B的重量平均分子量通常未達1500。由於寡聚物B的重量平均分子量為該範圍內,硬化後之聚縮合型密封材(ii)的耐龜裂性變良好。寡聚物B的重量平均分子量較佳為200以上且未達1500,更佳為250~1000。
寡聚物B例如係可以對應於構成寡聚物B的各重複單位,具有能生成矽氧烷鍵結的官能基之有機矽化合物作為起始原料來合成。「能生成矽氧烷鍵結的官能基」表示與上述者相同的定義。作為有機矽化合物,可以有機三鹵矽烷、有機三烷氧基矽烷等作為起始原料。聚矽氧樹脂係
可以將此等之起始原料,以對應於於各重複單位的存在比之比,藉由水解縮合法使反應而合成。
與樹脂A的重量平均分子量之差異,例如亦可藉由控制使起始原料水解縮合反應時的反應溫度、起始原料對反應系內的追加速度等來控制。寡聚物B係可使用工業上市售的矽氧樹脂、烷氧基寡聚物等。
樹脂A與寡聚物B之重量平均分子量係可使用市售的GPC裝置,使用聚苯乙烯作為標準來測定。
聚縮合型密封材(ii)更佳為包含硬化用觸媒。使用硬化用觸媒,樹脂A及寡聚物B較佳為作為分開的溶液準備,使用前將彼等之溶液混合。
作為硬化用觸媒,例如可使用鹽酸、硫酸、硝酸、磷酸等之無機酸、甲酸、醋酸、膚酸、檸檬酸、丙酸、丁酸、乳酸、琥珀酸等之有機酸。硬化用觸媒係不僅為酸性化合物,也可使用鹼性化合物。作為鹼性化合物,具體地可使用氫氧化銨、氫氧化四甲銨、氫氧化四乙銨等。此外,作為硬化用觸媒,亦可使用異丙氧化鋁、異丙氧化鋯等之金屬烷氧化物、乙醯丙酮鋯等之金屬乙醯丙酮化物。
此等硬化前之密封材(i)及聚縮合型(ii),係各自為了在後述的第2步驟及第4步驟中灌注,可溶解於溶劑中而使用。
作為溶劑,只要是可將所用的硬化前之密封材(i)或(ii)各自溶解者即可,例如可舉出丙酮、甲基乙基酮等之酮溶劑;甲醇、乙醇、異丙醇、正丙醇等之醇溶劑;己
烷、環己烷、庚烷、苯等之烴溶劑;醋酸甲酯、醋酸乙酯等之醋酸酯溶劑;四氫呋喃等之醚溶劑;乙二醇單甲基醚、乙二醇單乙基醚、乙二醇單異丙基醚、乙二醇單丁基醚、乙二醇單己基醚、乙二醇單乙基己基醚、乙二醇單苯基醚、乙二醇單苄基醚、二乙二醇單甲基醚、二乙二醇單乙基醚、二乙二醇單異丙基醚、二乙二醇單丁基醚、二乙二醇單己基醚、二乙二醇單乙基己基醚、二乙二醇單苯基醚、二乙二醇單苄基醚、丙二醇單甲基醚、丙二醇單乙基醚、丙二醇單異丙基醚、丙二醇單丁基醚、丙二醇單己基醚、丙二醇單乙基己基醚、丙二醇單苯基醚、丙二醇單苄基醚、二丙二醇單甲基醚、二丙二醇單乙基醚、二丙二醇單異丙基醚、二丙二醇單丁基醚、二丙二醇單己基醚、二丙二醇單乙基己基醚、二丙二醇單苯基醚、二丙二醇單苄基醚等之二醇醚溶劑;乙二醇單乙基醚乙酸酯、乙二醇單異丙基醚乙酸酯、乙二醇單丁基醚乙酸酯、乙二醇單己基醚乙酸酯、乙二醇單乙基己基醚乙酸酯、乙二醇單苯基醚乙酸酯、乙二醇單苄基醚乙酸酯等之前述二醇醚溶劑附加有乙酸基的二醇酯溶劑等。
於此等溶劑之中,以將發出紫外範圍(尤其UV-C範圍)之光的元件予以密封為目的,係具有酯鍵及/或醚鍵,不具有羥基,且1大氣壓下的沸點為100℃以上200℃以下之溶劑,較佳為130℃以上200℃以下。若沸點為100℃以上,較佳為130℃以上,則在秤量、混合、灌注等之操作中溶劑不易揮發,有操作性變良好的傾向,若沸
點為200℃以下,則即使硬化後也溶劑不易殘留,容易穿透紫外線LED等的350nm以下之短波長範圍的光而較宜。
以將發出紫外範圍(尤其UV-C範圍)之光的元件予以密封為目的,作為適合的溶劑,具體地可舉出醋酸丁酯、丁酸丁酯等之酯溶劑;二烷等之醚溶劑;乙二醇二乙基醚、二乙二醇二乙基醚等之二醇醚溶劑;乙酸2-乙氧基乙酯、乙酸2-丁氧基乙酯等的二醇酯溶劑等。
又,以抑制硬化後之密封材的龜裂耐性為目的,較佳為具有羥基,1大氣壓下的沸點為100℃以上,且熔點為25℃以下之溶劑。
以抑制硬化後之密封材的龜裂耐性為目的,作為較佳的溶劑,具體地可舉出丁醇、己醇、辛醇等之醇溶劑;二乙二醇單乙基醚等之二醇溶劑等。
本發明之製造方法包括:於基板上設置元件之第1步驟,將選自由加成聚合型密封材及聚縮合型密封材所成之群的至少一種硬化前之密封材(i),以覆蓋元件之方式,灌注至基板上之第2步驟,使所灌注的硬化前之密封材(i)硬化之第3步驟,與將硬化前的聚縮合型密封材(ii),灌注至已覆蓋元件的硬化後之密封材(i)之上,藉由使所灌注的硬化前之聚縮
合型密封材(ii)硬化,而層合密封材之第4步驟。
又,作為密封材(i)為加成聚合型密封材的第2態樣,本發明之製造方法包括:於基板上設置元件之第1步驟,將硬化前之加成聚合型密封材,以覆蓋元件之方式,灌注至基板上之第2步驟,使所灌注的硬化前之加成聚合型密封材硬化之第3步驟,與將硬化前的聚縮合型密封材,灌注至已覆蓋元件的硬化後之加成聚合型密封材之上,藉由使所灌注的硬化前之聚縮合型密封材硬化,而層合密封材之第4步驟。
此第2態樣之情況,係在經由第2、第3步驟所硬化的加成聚合型密封材之上,藉由層合聚縮合型密封材,而得到發光裝置的亮度降低之抑制、阻氣性之提高、及來自外部的損傷之防止的效果。
再者,作為密封材(i)為聚縮合型密封材(i)的第3態樣,本發明之製造方法包括:於基板上設置元件之第1步驟,將硬化前之聚縮合型密封材(i),以覆蓋元件之方式,灌注至基板上之第2步驟,使所灌注的硬化前之聚縮合型密封材(i)硬化之第3步驟,與將硬化前之聚縮合型密封材(ii),灌注至已覆蓋元件的硬化後之聚縮合型密封材(i)之上,藉由使所灌注的硬化
前之聚縮合型密封材(ii)硬化,而層合密封材之第4步驟。
此第3態樣之情況,係藉由在第2步驟中使用聚縮合型密封材(i),在第4步驟中使用聚縮合型密封材(ii),而得到密封材的劣化與發光裝置的亮度降低之抑制、來自外部的損傷之防止、及耐熱衝撃性之進一步提高的效果。
以下,說明各步驟。
第1步驟係在上述基板上,藉由常見方法設置上述元件之步驟。電極係可設置金屬線配線等之在半導體發光裝置中通常需要的其他構成。
第2步驟係以覆蓋基板上所設置的元件之方式,灌注硬化前之上述密封材(i)的步驟。
於灌注步驟中,通常藉由專用的分配器將密封材供給至基板上。半導體發光裝置及元件,由於取決於其裝置的使用目的而有各式各樣的形狀,所供給的密封材之量亦隨著基板、元件等的構造、面積、體積、其他電極、金屬線配線等之構造等而不同,但較佳為埋入此等之元件、金屬線配線等且覆蓋發光元件上的密封材之厚度儘可能地薄之量,圖1、圖2中的密封材(i)之厚度6成為1mm以下之厚度的量係更佳。
第3步驟係使在第2步驟所灌注的硬化前之密封材(i)硬化之步驟。
於密封材(i)為加成聚合型密封材時,硬化條件只要設定通常的加成聚合反應發生之溫度與時間即可,具體地較
佳為大氣壓下、空氣中,溫度為80~200℃,更佳為100~150℃。時間較佳為1~5小時。為了有效果地促進樹脂中的殘留溶劑之揮發、加成聚合反應等,亦可階段地提高硬化溫度而使硬化。
於密封材(i)為聚縮合型密封材時,硬化條件只要設定通常的聚縮合反應發生的溫度與時間即可,具體地較佳為大氣壓下、空氣中,溫度為80~250℃,更佳為100~200℃。時間較佳為1~5小時。為了有效果地促進樹脂中的殘留溶劑之揮發、聚縮合反應等,亦可階段地提高硬化溫度而使硬化。
第4步驟係在經第3步驟硬化後的密封材(i)之上,灌注硬化前之聚縮合型密封材(ii),藉由使所灌注的硬化前之聚縮合型密封材(ii)硬化,而層合密封材之步驟。
在第4步驟所灌注的聚縮合型密封材(ii)亦可使用通常的分配器,供給至經第3步驟硬化後的密封材(i)上。供給量係於將在第2步驟所供給的密封材(i)之供給量當作W1[g],將在第4步驟所供給的聚縮合型密封材(ii)之供給量當作W2[g]之情況,當密封材(i)為加成聚合型密封材時,將W2/W1之比率通常設定在0.5~13,較佳設定在1.5~8即可,當密封材(i)為聚縮合型密封材時,將W2/W1之比率通常設定在0.5~15,較佳設定在1.5~13即可。再者,取決於密封材之種類,有使樹脂溶解於溶劑中之情況,該情況的供給量W1[g]、W2[g]係扣除密封材中所含有的溶劑量後之量。
此比率若滿足此範圍,則覆蓋元件上的密封材之形狀係安定化,結果發光裝置的亮度安定。
於經第3步驟硬化後的密封材(i)之上,以第4步驟供給硬化前之聚縮合型密封材(ii)而覆蓋其表面後的硬化條件,係在將第3步驟的硬化溫度當作Ta[℃],將第4步驟的硬化溫度當作Tb[℃]時,較佳為Ta-25<Tb≦Ta+150之範圍,更佳為Ta-10<Tb≦Ta+100之範圍。藉由在此範圍使硬化,可防止因密接不良或龜裂所致的來自元件所發出的光之漫反射或損失,發光裝置的亮度係安定。在Tb的溫度之硬化時間宜為1~5小時之範圍。亦可階段地提高硬化溫度Tb前之期間的溫度。
第4步驟較佳為將與於第3步驟所得的硬化後之密封材(i)為物性不同的硬化後之聚縮合型密封材(ii)予以層合之步驟。該物性更佳為將施加於第4步驟所層合的硬化後之聚縮合型密封材(ii)的應力,以第3步驟所得的硬化後之密封材(i)來緩和之物性。又,第3步驟所得的硬化後之密封材(i),由於與元件及基板直接接觸,因元件的發光所造成的發熱、外部之溫度變化,由於材質的差異所發生的膨脹或收縮之應力蓄積,故較佳為具有比第4步驟所層合的硬化後之聚縮合型密封材(ii)更高的應力緩和性。
作為表示該物性之指標,硬化後之樹脂硬度係有效,其中較佳為組合硬化後之樹脂硬度以蕭耳硬度(Shore)A之90~20所表示的經第3步驟硬化後之密封材(i)、與以蕭耳硬度D之90~20所表示的經第4步驟硬化後之聚縮合
型密封材(ii),更佳為組合以蕭耳硬度A之60~20表示的經第3步驟硬化後之密封材(i)、與以蕭耳硬度D之90~60所表示的經第4步驟硬化後之聚縮合型密封材(ii)。
藉由重複第4步驟,可得到層合有3層以上之密封材的半導體發光裝置。本發明之半導體發光裝置,從對氧、水等的阻隔性之觀點來看,較佳為層合有2層以上之密封材的半導體發光裝置,尤佳為層合有3層以上之密封材的半導體發光裝置。
又,本發明之半導體發光裝置較佳為紫外線LED。
將Gelest公司製矽烷醇末端聚二甲基矽氧烷樹脂DMS-S21(Mw=8200)置入3g塑膠容器中,於其中投入和光純藥公司製甲基三乙氧基矽烷490mg與和光純藥公司製異丙氧化鋁10mg之混合液及攪拌,而調製聚縮合型密封材(i)。使密封材(i)在200℃硬化3小時後的硬度係蕭耳硬度A35。
將具有以式(2)表示的有機聚矽氧烷構造之樹脂A(Mw=3500,R1=甲基,R2=甲氧基或羥基,表1中顯示各重複單位的存在比率)76g與乙酸2-丁氧基乙酯24g於可密閉塑膠容器中,邊以攪拌棒攪拌邊在80℃的溫水浴中
加熱1小時。於所得之樹脂溶液10g中,添加磷酸15質量%與末端矽烷醇二甲基矽氧烷之3~7聚物為主成分的烷氧基矽烷化合物85質量%之混合液0.2g,進行脫泡混合,調製聚縮合型密封材(ii)。使密封材(ii)在200℃硬化3小時後的硬度係蕭耳硬度D75。
將東麗‧道康寧公司製的加成聚合型密封材OE-6351之A液與B液(皆無溶劑液)各自5.0g在塑膠容器中脫泡混合而調液。將所得之密封材液,藉由分配器,於預先設有發出275nm的波長之光的元件之LTCC基板(3.5×3.5mm)之中心滴下2.7mg,於40℃保持10分鐘,於150℃保持1小時,而使密封材硬化,得到加成聚縮合型密封材硬化物。
其次,將製造例2所得之聚縮合型密封材(ii)填充於分配器後,以覆蓋上述加成聚合型密封材硬化物的表面之方式滴下14.7mg。此時的加成聚合型密封材之供給量W1(=2.7mg)與聚縮合型密封材之供給量W2(=14.7×0.76=11.17mg)之比W2/W1為4.1。然後,於40℃保持10分鐘,於200℃保持3小時,以使聚縮合型密封材硬化,而製作2層構造的密封膜樣品3個。所得之膜
的厚度為1.17mm(下層之膜厚:0.29mm,上層之膜厚:0.88mm)。將所得之樣品設置在ESPEC公司製的小型冷熱衝撃裝置(商品名「TSE-11」)內,將於-40℃維持30分鐘,其次於100℃維持30分鐘,再度於-40℃維持30分鐘的循環(將「-40℃×30分鐘、100℃×30分鐘」當作1循環)進行1000循環試驗,以顯微鏡觀察龜裂的發生頻率,結果3個皆完全沒有發生龜裂及剝離。
於預先設有發出275nm的波長之光的元件之LTCC基板(3.5×3.5mm)之中心,以製造例1所得之聚縮合型密封材(i)成為厚度1mm以下之方式滴下。然後,將該基板投入25℃之烘箱中,費2小時升溫至200℃為止,到達200℃後,放置3小時而使聚縮合型密封材(i)硬化。
然後,於自烘箱取出的基板上,將製造例2所得之聚縮合型密封材(ii),以全體之厚度成為2mm以下之方式滴下。
然後,投入25℃之烘箱中,費2小時升溫至200℃為止,到達200℃後,放置3小時而使聚縮合型密封材(ii)硬化,得到樣品。
將所得之樣品設置在ESPEC公司製的小型冷熱衝撃裝置(商品名「TSE-11」)內,將於-40℃維持30分鐘,其次於100℃維持30分鐘,再度於-40℃維持30分鐘的循環(將「-40℃×30分鐘、100℃×30分鐘」當作1循環)進行
1000循環試驗,以顯微鏡觀察龜裂的發生頻率,結果沒有發生龜裂及剝離。
將甲基三甲氧基矽烷12.7g、二甲基二甲氧基矽烷11.2g、甲醇3.3g、水8.1g及作為觸媒的5質量%乙醯丙酮鋁鹽甲醇溶液4.8g置入可密閉容器中及混合,進行密栓,邊以攪拌棒攪拌邊在50℃的溫水浴中加熱8小時後,回到室溫,調製水解‧聚縮合液。
將此水解‧聚縮合液,使用微量吸管,分成5、6次,以總量14.0mg滴下至LTCC基板的中心。其次,於35℃保持30分鐘,然後於50℃保持1小時而進行第1乾燥後,藉由於150℃保持3小時來進行第2乾燥,而製作厚度為1.17mm的密封膜樣品3個。對所得之密封膜樣品,與實施例1同樣地使用小型冷熱衝撃裝置,進行熱循環試驗,結果在全部的樣品發生剝離。
依照本發明之製造方法,得到熱衝撃耐性優異之半導體發光裝置。
Claims (13)
- 一種半導體發光裝置之製造方法,其係包含基板與元件和密封材作為構成構件的半導體發光裝置之製造方法,包括:於基板上設置元件之第1步驟,將選自由加成聚合型密封材及聚縮合型密封材所成之群的至少一種硬化前之密封材(i),以覆蓋元件之方式,灌注至基板上之第2步驟,與使所灌注的硬化前之密封材(i)硬化之第3步驟,與將硬化前的聚縮合型密封材(ii),灌注至已覆蓋元件的硬化後之密封材(i)之上,藉由使所灌注的硬化前之聚縮合型密封材(ii)硬化,而層合密封材之第4步驟,將在第2步驟所供給的硬化前的密封材(i)之供給量當作W1[g],將在第4步驟所供給的硬化前的聚縮合型密封材(ii)之供給量當作W2[g]之情況,當在第2步驟所供給的硬化前的密封材(i)為加成聚合型密封材時,W2/W1之比率為1.5~8,當在第2步驟所供給的硬化前的密封材(i)為聚縮合型密封材時,W2/W1之比率為1.5~13。
- 如請求項1之半導體發光裝置之製造方法,其中密封材(i)係加成聚合型密封材。
- 如請求項1之半導體發光裝置之製造方法,其中密封材(i)係聚縮合型密封材。
- 如請求項3之半導體發光裝置之製造方法,其中用 於第2步驟的硬化前之密封材(i),係包含具有以式(1)表示的二烷基矽氧烷構造之樹脂X的聚縮合型密封材;
- 如請求項4之半導體發光裝置之製造方法,其中n為5~1000之整數。
- 如請求項1~5中任一項之半導體發光裝置之製造方法,其中用於第4步驟的硬化前之聚縮合型密封材(ii),包含具有以式(2)表示的有機聚矽氧烷構造之樹脂A;
- 如請求項1~5中任一項之半導體發光裝置之製造 方法,其中第4步驟係將與於第3步驟所得的硬化後之密封材(i)為物性不同的硬化後之聚縮合型密封材(ii)予以層合之步驟。
- 如請求項7之半導體發光裝置之製造方法,其中物性係將施加於第4步驟所層合的硬化後之聚縮合型密封材(ii)的應力,以第3步驟所得的硬化後之密封材(i)緩和之物性。
- 如請求項8之半導體發光裝置之製造方法,其中第3步驟所得的硬化後之密封材(i),係具有比第4步驟所層合的硬化後之聚縮合型密封材(ii)更高的應力緩和性。
- 如請求項1~5中任一項之半導體發光裝置之製造方法,其中第3步驟所得的硬化後之密封材(i),係與第4步驟所層合的硬化後之聚縮合型密封材(ii)具有密著性。
- 如請求項1~5中任一項之半導體發光裝置之製造方法,其中半導體發光裝置係紫外線LED。
- 如請求項1~5中任一項之半導體發光裝置之製造方法,其中藉由重複第4步驟,而得到層合有3層以上的密封材之半導體發光裝置。
- 一種半導體發光裝置,其係藉由如請求項1~12中任一項之半導體發光裝置之製造方法所製造之半導體發光裝置,層合2層以上的密封材所成。
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