TWI623725B - 在一亮場差分干涉對比系統中提供高精確度檢驗或計量之方法 - Google Patents

在一亮場差分干涉對比系統中提供高精確度檢驗或計量之方法 Download PDF

Info

Publication number
TWI623725B
TWI623725B TW103108800A TW103108800A TWI623725B TW I623725 B TWI623725 B TW I623725B TW 103108800 A TW103108800 A TW 103108800A TW 103108800 A TW103108800 A TW 103108800A TW I623725 B TWI623725 B TW I623725B
Authority
TW
Taiwan
Prior art keywords
substrate
slope
determining
scanning spot
scan
Prior art date
Application number
TW103108800A
Other languages
English (en)
Chinese (zh)
Other versions
TW201447223A (zh
Inventor
艾里 賽普爾
傑迪 辛哈
科爾特 林賽 荷勒
佩拉迪 悟卡達拉
喬治 可蘭
張家堯
伊瑞維尼 瑪迪 維茲
Original Assignee
克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 克萊譚克公司 filed Critical 克萊譚克公司
Publication of TW201447223A publication Critical patent/TW201447223A/zh
Application granted granted Critical
Publication of TWI623725B publication Critical patent/TWI623725B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW103108800A 2013-03-12 2014-03-12 在一亮場差分干涉對比系統中提供高精確度檢驗或計量之方法 TWI623725B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/797,901 2013-03-12
US13/797,901 US9052190B2 (en) 2013-03-12 2013-03-12 Bright-field differential interference contrast system with scanning beams of round and elliptical cross-sections

Publications (2)

Publication Number Publication Date
TW201447223A TW201447223A (zh) 2014-12-16
TWI623725B true TWI623725B (zh) 2018-05-11

Family

ID=51525937

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103108800A TWI623725B (zh) 2013-03-12 2014-03-12 在一亮場差分干涉對比系統中提供高精確度檢驗或計量之方法

Country Status (4)

Country Link
US (1) US9052190B2 (enExample)
JP (1) JP6171080B2 (enExample)
TW (1) TWI623725B (enExample)
WO (1) WO2014164935A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104515481B (zh) * 2014-12-17 2017-06-09 中国科学院长春光学精密机械与物理研究所 测量大直径圆环面平面度的装置及方法
US10495446B2 (en) 2015-06-29 2019-12-03 Kla-Tencor Corporation Methods and apparatus for measuring height on a semiconductor wafer
JP6841202B2 (ja) * 2017-10-11 2021-03-10 株式会社Sumco 半導体ウェーハの評価方法および半導体ウェーハの製造方法
DE102017129356B3 (de) * 2017-12-08 2019-03-07 Infineon Technologies Ag Inspektionsverfahren für halbleitersubstrate unter verwendung von neigungsdaten und inspektionsgerät
KR102518971B1 (ko) * 2018-04-13 2023-04-05 가부시키가이샤 사무코 반도체 웨이퍼의 평가 방법 및 반도체 웨이퍼의 제조 방법
US11017520B2 (en) * 2018-09-04 2021-05-25 Kla Corporation Multi-wavelength interferometry for defect classification
JP7067524B2 (ja) * 2019-04-15 2022-05-16 信越半導体株式会社 ウェーハのフラットネス測定機の選定方法及び測定方法
JP7143831B2 (ja) * 2019-10-11 2022-09-29 信越半導体株式会社 ウェーハ形状の測定方法
US12216301B2 (en) * 2022-03-29 2025-02-04 Intel Corporation Apparatuses and methods for inspecting embedded features
US20240353219A1 (en) * 2023-04-18 2024-10-24 Kla Corporation Angular averaging calibration on bare wafer metrology tools for esfqr matching improvement
US20250290745A1 (en) * 2024-03-15 2025-09-18 Tokyo Electron Limited Apparatus and method for determining the surface profile of a semiconductor substrate using a laser scanning technique

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000035540A (ja) * 1998-07-16 2000-02-02 Nikon Corp 微分干渉顕微鏡
JP2002287328A (ja) * 2001-03-28 2002-10-03 Lasertec Corp 位相シフトマスクの欠陥検査装置
US20040115843A1 (en) * 2000-09-20 2004-06-17 Kla-Tencor, Inc. Methods and systems for determining a presence of macro defects and overlay of a specimen
JP2007086610A (ja) * 2005-09-26 2007-04-05 Lasertec Corp 微分干渉顕微鏡及び欠陥検査装置
TW200837327A (en) * 2007-01-31 2008-09-16 Zygo Corp Interferometry for lateral metrology
TW201037267A (en) * 2008-11-26 2010-10-16 Zygo Corp Scan error correction in low coherence scanning interferometry
JP2011220757A (ja) * 2010-04-07 2011-11-04 Lasertec Corp 検査装置及び欠陥検査方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001295060A1 (en) * 2000-09-20 2002-04-02 Kla-Tencor-Inc. Methods and systems for semiconductor fabrication processes

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000035540A (ja) * 1998-07-16 2000-02-02 Nikon Corp 微分干渉顕微鏡
US20040115843A1 (en) * 2000-09-20 2004-06-17 Kla-Tencor, Inc. Methods and systems for determining a presence of macro defects and overlay of a specimen
JP2002287328A (ja) * 2001-03-28 2002-10-03 Lasertec Corp 位相シフトマスクの欠陥検査装置
JP2007086610A (ja) * 2005-09-26 2007-04-05 Lasertec Corp 微分干渉顕微鏡及び欠陥検査装置
TW200837327A (en) * 2007-01-31 2008-09-16 Zygo Corp Interferometry for lateral metrology
TW201037267A (en) * 2008-11-26 2010-10-16 Zygo Corp Scan error correction in low coherence scanning interferometry
JP2011220757A (ja) * 2010-04-07 2011-11-04 Lasertec Corp 検査装置及び欠陥検査方法

Also Published As

Publication number Publication date
TW201447223A (zh) 2014-12-16
JP2016517631A (ja) 2016-06-16
US9052190B2 (en) 2015-06-09
US20140268172A1 (en) 2014-09-18
JP6171080B2 (ja) 2017-07-26
WO2014164935A1 (en) 2014-10-09

Similar Documents

Publication Publication Date Title
TWI623725B (zh) 在一亮場差分干涉對比系統中提供高精確度檢驗或計量之方法
TWI745640B (zh) 偵測一樣本上之一子解析度缺陷之方法及裝置
JP4885212B2 (ja) 薄膜構造についての情報に関する低コヒーレンス干渉計信号を解析するための方法およびシステム
CN100485312C (zh) 用于波前控制和改进的3d测量的方法和装置
TWI439662B (zh) 利用掃瞄干涉儀分析表面構造之方法與裝置
TWI448661B (zh) 使用極化掃描法之干涉儀
US7738113B1 (en) Wafer measurement system and apparatus
US6753972B1 (en) Thin film thickness measuring method and apparatus, and method and apparatus for manufacturing a thin film device using the same
TWI417518B (zh) 干涉儀及量測光學解析下表面特徵之特性的方法
US9305341B2 (en) System and method for measurement of through silicon structures
US10557803B2 (en) Surface height determination of transparent film
TW201942539A (zh) 使用表面形貌之樣本檢測
TW201825864A (zh) 用於圖案化半導體特徵之特徵化的掃描白光干涉測量系統
JP2008083059A (ja) ウェーハの測定システム及び測定装置
TWI692617B (zh) 具有像素化相移光罩之干涉儀及執行干涉儀量測之方法
WO2004072629A1 (en) System and method for inspection of silicon wafers
US20200357704A1 (en) Laser triangulation sensor system and method for wafer inspection
JP2018523838A (ja) ウェーハの表面性状を非接触検査するための方法及び装置
Liebens et al. In-line metrology for characterization and control of extreme wafer thinning of bonded wafers
WO2017122248A1 (ja) 薄膜付ウェーハの膜厚分布の測定方法
Riesz Makyoh topography: a simple yet powerful optical method for flatness and defect characterization of mirror-like surfaces
TWI735548B (zh) 檢測裝置及檢測方法
KR100852177B1 (ko) 웨이퍼 표면 결함 검사방법
Nutsch et al. Determination of flatness on patterned wafer surfaces using wavefront sensing methods
Trujillo-Sevilla et al. Wave Front Phase Imaging of Wafer Geometry Using High Pass Filtering for Improved Resolution