TWI620407B - 車用整流器封裝模組及模組中溫度感測器的連接狀態偵測方法 - Google Patents

車用整流器封裝模組及模組中溫度感測器的連接狀態偵測方法 Download PDF

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Publication number
TWI620407B
TWI620407B TW105142891A TW105142891A TWI620407B TW I620407 B TWI620407 B TW I620407B TW 105142891 A TW105142891 A TW 105142891A TW 105142891 A TW105142891 A TW 105142891A TW I620407 B TWI620407 B TW I620407B
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Taiwan
Prior art keywords
voltage
current
temperature sensor
reference voltage
control chip
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TW105142891A
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English (en)
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TW201824726A (zh
Inventor
Chi-Kai Wu
吳繼開
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Actron Technology Corporation
朋程科技股份有限公司
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Application filed by Actron Technology Corporation, 朋程科技股份有限公司 filed Critical Actron Technology Corporation
Priority to TW105142891A priority Critical patent/TWI620407B/zh
Priority to US15/439,927 priority patent/US10371724B2/en
Application granted granted Critical
Publication of TWI620407B publication Critical patent/TWI620407B/zh
Publication of TW201824726A publication Critical patent/TW201824726A/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16523—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using diodes, e.g. Zener diodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K15/00—Testing or calibrating of thermometers
    • G01K15/007—Testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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Abstract

車用整流器封裝模組及其溫度感測器的連接狀態偵測方法。車用整流器封裝模組包括至少一溫度感測器以及控制晶片。控制晶片具有一端點以透過封裝導線耦接至少一溫度感測器。控制晶片依據模式選擇信號而產生電流並提供參考電壓。電流透過封裝導線被提供至溫度感測器，且控制晶片比較端點上的電壓以及參考電壓以產生一比較結果。其中，在測試模式下，比較電路產生比較結果以指示端點與溫度感測器的連接狀態。

Description

車用整流器封裝模組及模組中溫度感測器的連接狀態偵測方法
本發明是有關於一種車用整流器封裝模組，且特別是有關於一種車用整流器封裝模組的溫度感測器的連接狀態偵測方法。
在發電機的技術領域中，為進行交流-直流間的轉換動作，常透過設置整流橋的方式來進行。在習知的技術領域中，整流橋可以由電晶體或是二極體來構成，並用以提供整流後的電壓以做為驅動負載的依據。
為檢測整流橋的工作狀態，對整流橋周圍的環境溫度偵測是一種必要的技術手段。因此，在形成整流橋的電晶體或是二極體附近，需要配置適當數量的溫度感測器。為得知溫度感測器的溫度感測結果，車用整流器中的控制晶片可透過導線連接至溫度感測器，並藉以進行資訊傳遞。然而，這些導線可能因為封裝或長期使用而造成劣化或甚至斷開的情形，如此一來，控制晶片將無法正確得知整流橋上的溫度變化狀態，有可能造成車用整流器動作異常，並甚至有發生損毀的風險。
本發明提供一種車用整流器封裝模組以及其溫度感測器的連接狀態偵測方法，可針對其中的溫度感測器的內連線狀態進行自我測試的能力。
本發明的車用整流器包括至少一溫度感測器以及控制晶片。控制晶片具有一端點。端點透過至少一封裝導線耦接至少一溫度感測器。控制晶片依據模式選擇信號而產生電流並提供參考電壓。上述的電流透過至少一封裝導線被提供至至少一溫度感測器，且控制晶片比較端點上的電壓以及參考電壓以產生一比較結果。其中，在測試模式下，比較電路產生比較結果以指示端點與溫度感測器的連接狀態。
本發明的車用整流器封裝模組中，溫度感測器透過至少一封裝導線耦接封裝模組中的一端點。溫度感測器的連接狀態偵測方法包括：依據模式選擇信號以產生電流，其中，電流被提供至溫度感測器；依據模式選擇信號提供參考電壓；以及，依據比較端點上的電壓以及參考電壓以產生比較結果，其中在測試模式下，比較結果指示溫度感測器與端點的連接狀態。
基於上述，本發明的控制晶片在測試模式下，透過提供電流以流過耦接至溫度感測器的封裝導線，並依據控制晶片上耦接封裝導線的端點上的電壓狀態來判定溫度感測器有無正常連接至控制器晶片。如此一來，透過控制晶片的自我測試功能，可確認溫度感測器可否正常動作，確保車用整流器的性能及安全。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
請參照圖1，圖1繪示本發明一實施例的車用整流器封裝模組的示意圖。車用整流器封裝模組100包括一個或多個的溫度感測器110、以及控制晶片120。控制晶片120上可具有銲墊PAD1以及PAD2，控制晶片120上的銲墊PAD1以及PAD2分別形成端點E1、E2並分別透過封裝導線BWIR1以及BWIR2耦接至溫度感測器110。控制晶片120例如包括電流產生器121、參考電壓產生器122以及比較電路123。電流產生器121耦接至端點E1以及比較電路123。電流產生器121接收模式選擇信號MD並依據模式選擇信號MD以產生電流I1或電流I2並提供電流I1或電流I2至端點E1。在本實施例中，電流產生器121所提供的電流I1或電流I2可藉由端點E1以及封裝導線BWIR1流向溫度感測器110，並流經溫度感測器110，再藉由封裝導線BWIR2流向端點E2並流向參考接地端GND。透過使不同電流值的電流I1或I2流通溫度感測器110，端點E1上可提供不同的電壓值。
參考電壓產生器122耦接至比較電路123。參考電壓產生器122接收模式選擇信號MD並依據模式選擇信號MD提供參考電壓RV至比較電路123。此外，比較電路123可針對端點E1上的電壓與參考電壓RV進行比較，並產生比較結果SD。
在動作細節方面，控制晶片120可依據模式選擇信號MD以操作在正常模式以及測試模式下。當在測試模式下時，電流產生器121可依據模式選擇信號MD提供電流I1及電流I2中具有較小電流值的電流I1至端點E1。在此同時，參考電壓產生器122可選擇第一電壓以及第二電壓中具有較大電壓值的電壓（例如第一電壓）來做為參考電壓RV。在測試模式下，若封裝導線BWIR1與封裝導線BWIR2皆正常且有效的連接在控制晶片120以及溫度感測器110間，電流I1可透過封裝導線BWIR1流向溫度感測器110，並透過封裝導線BWIR2流向參考接地端GND。如此一來，端點E1上的電壓值實質上可等於電流I1通過溫度感測器110時所產生的電壓降。相對的，若封裝導線BWIR1與封裝導線BWIR2的至少其中之一未有效的連接在控制晶片120以及溫度感測器110間，而有發生斷開或脫落的現象時，端點E1上的電壓值將會因為電流產生器121提供電流I1的拉高動作，而等於相對高的電壓值（實質上等於電流產生器121所接收的操作電源的電壓值）。
由上述說明可以得知，在測試模式下，比較電路123可以依據比較端點E1上的電壓值是否大於參考電壓RV，來獲知封裝導線BWIR1以及BWIR2的連接狀態。具體來說明，在測試模式下，當端點E1上的電壓值大於參考電壓RV時，表示封裝導線BWIR1、BWIR2以及溫度感測器110所形成的電氣迴路有瑕疵，或可能是被斷開的。此時，比較電路123所產生的比較結果SD可指示封裝導線BWIR1、BWIR2的至少其中之一可能發生斷開的現象。相對的，在測試模式下，當端點E1上的電壓值小於參考電壓RV時，表示封裝導線BWIR1、BWIR2以及溫度感測器110所形成的電氣迴路是正常的。此時，比較電路123所產生的比較結果SD可指示封裝導線BWIR1、BWIR2良好連接於溫度感測器110以及控制晶片120間。
值得一提的，在測試模式下，參考電壓產生器122所提供的參考電壓RV的電壓值是預先設定的。在本發明實施例中，可以依據電流產生器121所接收的操作電源的電壓值減去一個偏移值來設定參考電壓RV的電壓值。至於偏移值的大小可以由設計者依據實際的需求進行設置，沒有固定的限制。
在完成測試模式的測試動作後，若偵測出溫度感測器110正常連接至控制晶片120，則可進入正常模式。其中，控制晶片120在正常模式下可透過溫度感測器110來偵測出環境溫度的變化狀態。具體來說明，當在正常模式下，電流產生器121可依據模式選擇信號MD提供電流I1及電流I2中具有較大電流值的電流I2至端點E1。在此同時，參考電壓產生器122可選擇第一電壓以及第二電壓中具有較小電壓值的電壓（例如第二電壓）來做為參考電壓RV。在正常模式下，基於封裝導線BWIR1與封裝導線BWIR2皆正常且有效的連接在控制晶片120以及溫度感測器110間，電流I2可透過封裝導線BWIR1流向溫度感測器110，並透過封裝導線BWIR2流向參考接地端GND。在此時，溫度感測器110可依據環境溫度的大小而提供不同的導通壓降。如此一來，端點E1上的電壓值將可反映於環境溫度的變化而有所改變。
在此同時，比較電路123可使端點E1上的電壓VE1與此時的參考電壓RV進行比較，比較電路123所產生的比較結果SD可反映於環境溫度的變化狀態。
在正常模式下，可以依據預設的溫度臨界值來設定參考電壓RV的電壓值。其中，若設計使車用整流器封裝模組100中的環境溫度不超過溫度臨界值，可依據對應溫度臨界值時溫度感測器110對應提供的阻抗值以及電流I2的電流值來設定正常模式下參考電壓RV的電壓值。在正常模式下，當比較電路123判斷端點E1上的電壓VE1大於參考電壓RV時，表示車用整流器封裝模組100沒有發生過熱的狀況，可維持正常動作。相反的，當比較電路123判斷端點E1上的電壓VE1小於參考電壓RV時，表示車用整流器封裝模組100發生過熱的狀況，需要進行相對應的動作以維持系統的穩定及安全。
以下請參照圖2，圖2繪示本發明另一實施例的車用整流器封裝模組的示意圖。車用整流器封裝模組200包括溫度偵測器210以及控制晶片220。控制晶片220透過封裝導線BWIR1及BWIR2耦接至溫度偵測器210。控制晶片220例如包括電流產生器221、參考電壓產生器222以及比較電路223。電流產生器221接收模式選擇信號MD並依據模式選擇信號MD產生電流I1或電流I2。
參考電壓產生器222接收第一電壓V1、第二電壓V2以及模式選擇信號MD，並依據模式選擇信號MD選擇第一電壓V1及第二電壓V2的其中之一以做為參考電壓RV，參考電壓產生器222並提供參考電壓RV至比較電路223。其中，在本實施例中，參考電壓產生器222包括開關SW1及SW2。開關SW1及SW2為電晶體開關，並受控於模式選擇信號MD。開關SW1及SW2分別接收第一電壓V1以及第二電壓V2。在測試模式下，開關SW1導通，開關SW2斷開，參考電壓產生器222使電壓V1做為參考電壓RV。相對的，在正常模式下，開關SW2導通，開關SW1斷開，參考電壓產生器222使電壓V2做為參考電壓RV。開關SW1及SW2不會同時被導通。
比較電路223耦接電流產生器221以及參考電壓產生器222，並使端點E1上的電壓以及參考電壓RV進行比較來產生比較結果SD。在本實施例中，比較電路223可利用運算放大器來建構。而本領域具通常知識者所熟知的比較電路的架構都可以應用以實現比較電路223，沒有固定的限制。
溫度偵測器210則包括多數個串接的二極體TSD1~TSD4來形成，其中，二極體TSD1~TSD4依序順向偏壓於端點E1以及端點E2間。以二極體TSD1為範例，二極體TSD1的陽極耦接至端點E1，而其陰極則耦接至參考接地端GND。
值得一提的，溫度偵測器210所包括的二極體的數量並沒有固定的限制，透過不同電氣特性的二極體，設計者可在溫度偵測器210設置一個二極體或多個串接的二極體，在數量上沒有固定的限制。此外，透過二極體來建構溫度偵測器210也僅只是一個範例，本發明實施例中可透過其他對溫度敏感的電子元件來設計溫度偵測器210，例如，熱敏電阻。
在動作細節方面，在測試模式下，電流產生器221可依據模式選擇信號MD來產生例如等於1微安的電流I1，並使電流I1流至端點E1。同時，參考電壓產生器222依據模式選擇信號MD來使其中的開關SW1導通，並使開關SW2斷開。如此一來，參考電壓產生器222可提供電壓V1（例如等於3V）來做為參考電壓RV。
在測試模式下，比較電路223比較端點E1上的電壓有無大於參考電壓RV。若封裝導線BWIR1、BWIR2正常連接於溫度偵測器210以及控制晶片220間時，在正常的溫度範圍下，端點E1上的電壓值不會大於參考電壓RV。因此，依據比較電路223所產生的比較結果SD，可得知封裝導線BWIR1、BWIR2的連接狀態是否正常。
在另一方面，在正常模式下，控制晶片220可進行環境溫度的偵測動作。此時，電流產生器221可依據模式選擇信號MD來產生例如等於8微安的電流I2，並使電流I2流至端點E1。同時，參考電壓產生器222依據模式選擇信號MD來使其中的開關SW2導通，並使開關SW1斷開。如此一來，參考電壓產生器222可提供電壓V2（例如等於0.8V）來做為參考電壓RV。
基於此時的封裝導線BWIR1、BWIR2的連接狀態是正常的，電流I2可由端點E1透過封裝導線BWIR1流經溫度偵測器210的二極體串。溫度偵測器210中的二極體串則依據環境溫度的不同而提供不同的導通壓降。如此一來，端點E1上的電壓也可因環境溫度的變化而產生不同的電壓值。
比較電路222提供的參考電壓RV（等於第二電壓V2）例如是針對環境溫度等於攝氏215度（即為溫度臨界值）時，端點E1上所可能產生的電壓值來設定的。因此，當比較電路222比較出端點E1上的電壓小於參考電壓RV時，表示車用整流器封裝模組200內部的環境溫度過高（大於攝氏215度），有過熱的疑慮。相對的，當比較電路222比較出端點E1上的電壓大於參考電壓RV時，表示車用整流器封裝模組200內部的環境溫度未發生過熱現象。
在本發明其他實施例中，車用整流器封裝模組200中的溫度偵測器210的數量並不限定是一個。其中，多個溫度偵測器210可搭配多個電流產生器221、參考電壓產生器222以及比較電路223所形成的電路組合，並使各溫度偵測器210的連線狀態偵測以及溫度偵測動作皆可獨立且正常的被執行。
於上述實施例中，本領域具通常知識者亦可使用其他熟知的電路元件/架構來實現控制晶片120、220所執行的車用整流器模組中溫度感測器的連接狀態偵測的技術方案，而不限於使用電流產生器121、221、參考電壓產生器122、222及比較電路123、223。
以下請參照圖3A以及圖3B，圖3A以及圖3B分別繪示本發明實施例的電流產生器的不同實施方式的示意圖。在圖3A中，電流產生器310包括電壓控制電流源IA。電壓控制電流源IA接收偏壓電壓VB，並依據偏壓電壓VB的大小來產生電流I1或是I2。偏壓電壓VB可由偏壓產生器311來產生。其中，偏壓產生器311接收並依據模式選擇信號MD以產生偏壓電壓VB。
關於電壓控制電流源IA以及偏壓電壓VB的硬體實施架構，可分別應用本領域具通常知識者所熟知的電壓控制電流源及電壓產生器的硬體架構，沒有特定的限制。
在圖3B中，電流產生器310包括第一電流源IA1以及第二電流源IA2。第一電流源IA1以及第二電流源IA2接收模式選擇信號MD，並依據模式選擇信號MD來使第一電流源IA1提供電流I1或使第二電流源IA2提供電流I2。舉例來說明，當模式選擇信號MD為第一邏輯準位（對應測試模式）時，第一電流源IA1被致能並提供電流I1（此時第二電流源IA2不動作）。相對的，當模式選擇信號MD為第二邏輯準位（對應正常模式）時，第二電流源IA2被致能並提供電流I2（此時第一電流源IA1不動作）。
在本實施方式中，第一電流I1以及第二電流I2不會同時被提供。
以下請參照圖4A以及圖4B，圖4A繪示本發明另一實施例的車用整流器封裝模組的示意圖，圖4B則繪示依據線段A-A’的車用整流器封裝模組400的剖面示意圖。車用整流器封裝模組400包括導線架40、控制晶片410、電晶體T1~T4、基納二極體D1~D4以及溫度偵測器TS1~TS4。電晶體T1~T4配置在導線架40的第一表面的不同位置上。基納二極體D1~D4則配置在導線架40的第二表面，分別相對於電晶體T1~T4的不同位置上，其中，第一表面與第二表面相對。溫度偵測器TS1~TS4配置在導線架40的第一表面上，並分別配置在鄰近於電晶體T1~T4的位置上。溫度偵測器TS1~TS4可分別透過封裝導線W1~W4來與控制器晶片410電性連接。
此外，電晶體T1~T4可以為金屬氧化物半導體場效電晶體。而車用整流器封裝模組400並包括多個導電結構C11~C14，以分別使電晶體T1~T4與導線架40的不同位置電性連接。
電晶體T1~T4可形成多個整流橋。其中，電晶體T1、T3依序串接在電源接腳B+以及接地接腳E1間，電晶體T2、T4依序串接在電源接腳B+以及接地接腳E2間。其等效電路可參見圖5繪示的本發明實施例的車用整流器封裝模組的整流橋的等效電路圖。此外，基納二極體D1~D4分別耦接在電晶體T1~T4的兩端點（源極與汲極）間，並做為電晶體T1~T4的過壓保護元件。
此外，電晶體T1~T4分別接收控制信號CT1~CT4，控制信號CT1~CT4可由控制晶片410所提供。控制晶片410可透過封裝導線連接至電晶體T1~T4的控制端，並分別提供控制信號CT1~CT4。電晶體T1、T3耦接至相位輸出接腳P1，電晶體T2、T4則耦接至相位輸出接腳P2。
在本實施例中，導線架40包括外引接腳420。外引接腳420可透過封裝導線W5連接至控制晶片410。如此一來，控制晶片410可透過封裝導線W5將前述實施例的比較結果SD傳送至外部的電子裝置。其中，比較結果SD的傳送方式可以透過任意的串列通信協定來傳送，例如內部整合電路（Inter-Integrated Circuit, I 2C）、串列週邊介面（Serial Peripheral Interface, SPI）、單線通信協定等，沒有固定的限制。
在另一方面，車用整流器封裝模組400更包括二極體RD1。二極體RD1配置在導線架40中的兩個外引接腳430以及440間。其中，二極體RD1跨接在相鄰的外引接腳430以及440間，細節來說明，二極體RD1的陽極電性連接至外引接腳430而二極體RD1的陰極電性連接至外引接腳440。另外，控制晶片410透過封裝導線W6連接至外引接腳430，並連接至二極體RD1的陽極。控制晶片410中，承載封裝導線W6的銲墊可透過內部導線以及其他的封裝導線（電源傳輸導線）與電源接腳B+產生電性連接。另外，控制晶片410透過封裝導線W7連接至外引接腳440，並連接至二極體RD1的陰極。其中，承載封裝導線W7的銲墊並連接至控制晶片410的電源接收端。如此一來，可使二極體RD1順向偏壓於電源接腳B+以及控制晶片410的電源接收端間。
值得注意的，當使用者進行車用電池的連接動作時，若不小心發生反接現象時，被逆向偏壓的二極體RD1可以被斷開，並使反接於電源接腳B+以及參考接地接腳E1間的電壓不至於被提供至控制晶片410中。如此，使控制晶片410中的各電路元件不會因車用電池的反接動作而立刻燒毀。在一定的時間區間中，使用者仍可更正車用電池的錯誤連接，並使車用整流器封裝模組400仍可維持正常的動作。相對的，若使用者進行的車用電池的連接方向正確時，二極體RD1可以被導通，並使電源可以正常的被提供至車用整流器裝置封裝模組400中。
另外，在圖4B中，導線架40具有第一表面SF1以及第二表面SF2。其中，第一表面SF1上承載電晶體T1以及T2。導線架40第一表面透過導電黏接層S1以及S2分別電性連接至電晶體T1以及T2的第一端。電晶體T1、T2的第二端並分別透過導電黏接層S3、S4電性連接至導電結構C11以及C12的一端。導電結構C11以及C12的另一端則分別透過導電黏接層S5以及S6電性連接至導線架40的第一表面SF1上。
此外，導線架40的第二表面SF2上透過導電黏接層S7以及S9電性連接至基納二極體D1以及D2的陰極。基納二極體D1以及D2的陽極則分別透過導電黏接層S8以及S10電性連接至導電結構C21以及C22的一端，導電結構C21以及C22的另一端則分別透過導電黏接層S11以及S12電性連接至導線架40的第二表面SF2上。
在本實施例中，導電黏接層S1~S12可以由銲錫所構成，或利用其他本領域具通常知識者所熟知的具導電性的黏接材料所構成，沒有固定的限制。
在圖4B中，溫度偵測器TS1透過導電黏接層S41電性連接至區塊12的第一表面SF1上鄰近於電晶體T1的位置，用以偵測電晶體T1的溫度變化狀態。
以下請參照圖6，圖6繪示本發明實施例的車用整流器封裝模組中的溫度感測器的連接狀態偵測方法的流程圖。其中，車用整流器封裝模組中，溫度感測器透過至少一封裝導線耦接封裝模組中的一端點。溫度感測器的連接狀態偵測方法的步驟包括：在步驟S610中，依據模式選擇信號以產生電流，其中，電流被提供至溫度感測器；在步驟S620中則依據模式選擇信號來提供參考電壓。最後，步驟S630則依據比較端點上的電壓以及參考電壓以產生比較結果。其中，在測試模式下，比較結果指示溫度感測器與端點的連接狀態。
關於上述步驟的實施細節，在前述的實施方式及實施例中已有詳細的說明，在此恕不多贅述。
綜上所述，本發明透過在不同模式下提供不同的電流以流過溫度感測器，並依據偵測控制晶片與溫度感測器連接端點上的電壓，來獲知溫度感測器與控制晶片的連接狀態，以及偵測車用整流器封裝模組的內部環境溫度有無發生過熱的現象。透過本發明的控制晶片所提供的自我測試方式，溫度感測器的溫度偵測動作的可靠度可以提升，確保車用整流器封裝模組的工作的穩定性。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100、200、400‧‧‧車用整流器封裝模組
110、210‧‧‧溫度感測器
120、220、410‧‧‧控制晶片
PAD1、PAD2‧‧‧銲墊
E1、E2‧‧‧端點
BWIR1、BWIR2‧‧‧封裝導線
121、221‧‧‧電流產生器
122、222‧‧‧參考電壓產生器
123、223‧‧‧比較電路
310、320‧‧‧電流產生器
311‧‧‧偏壓產生器
IA‧‧‧電壓控制電流源
IA1、IA2‧‧‧電流源
VB‧‧‧偏壓電壓
MD‧‧‧模式選擇信號
I1、I2‧‧‧電流
SD‧‧‧比較結果
RV‧‧‧參考電壓
GND‧‧‧參考接地端
V1、V2‧‧‧電壓
SW1、SW2‧‧‧開關
C11、C12、C13、C14、C21、C22、C23、C24‧‧‧導電結構
W1~W7‧‧‧封裝導線
SF1‧‧‧第一表面
SF2‧‧‧第二表面
S1~S12、S41‧‧‧導電黏接層
D1~D4‧‧‧基納二極體
RD1、TSD1~TSD4‧‧‧二極體
TS1~TS4‧‧‧溫度偵測元件
T1~T4‧‧‧電晶體
CT1~CT4‧‧‧控制信號
B+‧‧‧電源接腳
P1、P2‧‧‧相位輸出接腳
40‧‧‧導線架
420、430、440‧‧‧外引接腳
E1、E2‧‧‧參考接地接腳
圖1繪示本發明一實施例的車用整流器封裝模組的示意圖。 圖2繪示本發明另一實施例的車用整流器封裝模組的示意圖。 圖3A以及圖3B分別繪示本發明實施例的電流產生器的不同實施方式的示意圖。 圖4A繪示本發明另一實施例的車用整流器封裝模組的示意圖。 圖4B則繪示依據線段A-A’的車用整流器封裝模組400的剖面示意圖。 圖5繪示的本發明實施例的車用整流器封裝模組的整流橋的等效電路圖。 圖6繪示本發明實施例的車用整流器封裝模組中的溫度感測器的連接狀態偵測方法的流程圖。

Claims (8)

  1. 一種車用整流器封裝模組，包括：至少一溫度感測器；一控制晶片，具有一端點，該端點透過至少一封裝導線耦接該至少一溫度感測器，該控制晶片依據一模式選擇信號而產生一電流並提供一參考電壓，該電流透過該至少一封裝導線被提供至該至少一溫度感測器，且該控制晶片比較該端點上的電壓以及該參考電壓以產生一比較結果，其中，在一測試模式下，該比較結果指示該端點與該至少一溫度感測器的連接狀態；一導線架，其中該至少一溫度感測器以及該控制晶片分別配置在該導線架的一第一表面的不同區域上；以及多數個電晶體，配置在該導線架的該第一表面上，用以形成至少一整流橋，其中，該至少一溫度感測器與該些電晶體鄰近配置。
  2. 如申請專利範圍第1項所述的車用整流器封裝模組，該電流包括不同電流值的一第一電流或一第二電流，該參考電壓包括不同電壓值的一第一電壓或一第二電壓，其中該控制晶片包括：一電流產生器，依據該模式選擇信號以產生該第一電流或該第二電流；一參考電壓產生器，依據該模式選擇信號提供該第一電壓或該第二電壓以作為該參考電壓；以及 一比較電路，耦接該電流產生器以及該參考電壓產生器，依據比較該端點上的電壓以及該參考電壓以產生該比較結果。
  3. 如申請專利範圍第2項所述的車用整流器封裝模組，其中：在該測試模式下，該電流產生器提供該第一電流至該至少一溫度感測器，該參考電壓產生器選擇該第一電壓以作為該參考電壓；以及在一正常模式下，該電流產生器提供該第二電流至該至少一溫度感測器，該參考電壓產生器選擇該第二電壓以作為該參考電壓，且該比較電路產生該比較結果以指示一環境溫度與一溫度臨界值的大小關係。
  4. 如申請專利範圍第3項所述的車用整流器封裝模組，其中該至少一溫度感測器依據該環境溫度提供一導通壓降，該至少一溫度感測器包括：至少一二極體，其陽極耦接至該端點，其陰極耦接至一參考接地端。
  5. 如申請專利範圍第1項所述的車用整流器封裝模組，其中該導線架包括至少一外引接腳，該控制晶片耦接至該至少一外引接腳並透過該至少一外引接腳傳送該比較結果。
  6. 如申請專利範圍第5項所述的車用整流器封裝模組，更包括： 一二極體，配置在該導線架的相鄰的二外引接腳間，其中，該控制晶片透過多數條電源傳輸導線使該導線架的一電源接腳電性連接至該二極體的陽極，並使該二極體的陰極耦接至該控制晶片的電源接收端。
  7. 如申請專利範圍第1項所述的車用整流器封裝模組，其中更包括：多數個基納二極體，配置在該導線架的第二表面上，該第一表面相對於該第二表面，該些基納二極體分別串接在該些電晶體的第一端及第二端間，其中該些電晶體包括金屬氧化物半導體場效電晶體。
  8. 一種車用整流器封裝模組中的一溫度感測器的連接狀態偵測方法，該溫度感測器透過至少一封裝導線耦接該封裝模組中的一端點，該方法包括下列步驟：依據一模式選擇信號以產生一電流，其中該電流被提供至該溫度感測器，且該電流包括不同電流值的一第一電流或一第二電流；依據該模式選擇信號提供一參考電壓，其中該參考電壓包括不同電壓值的一第一電壓或一第二電壓，且選擇該第一電壓及該第二電壓的其中之一作為該參考電壓，其中：在一測試模式下，提供該第一電流至該溫度感測器，並選擇該第一電壓以作為該參考電壓，在一正常模式下，提供該第二電流至該溫度感測器，並 選擇該第二電壓以作為該參考電壓；以及依據比較該端點上的電壓以及該參考電壓以產生一比較結果，其中在該測試模式下，該比較結果指示該溫度感測器與該端點的連接狀態，在該正常模式下，該比較結果指示一環境溫度與一溫度臨界值的大小關係，其中，該第一電流與該第二電流不同時被產生，且該第一電流的電流值小於該第二電流的電流值，該第一電壓的電壓值大於該第二電壓的電壓值，其中，在該測試模式下，當該端點上的電壓大於該參考電壓時，該比較結果指示該端點與該溫度感測器的連接狀態發生斷開的現象，在該正常模式下，當該端點上的電壓小於該參考電壓時，該比較結果指示該環境溫度大於該溫度臨界值。
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