TWI619790B - 暫時性黏合 - Google Patents

暫時性黏合 Download PDF

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Publication number
TWI619790B
TWI619790B TW105104515A TW105104515A TWI619790B TW I619790 B TWI619790 B TW I619790B TW 105104515 A TW105104515 A TW 105104515A TW 105104515 A TW105104515 A TW 105104515A TW I619790 B TWI619790 B TW I619790B
Authority
TW
Taiwan
Prior art keywords
copper
benzimidazole
alkyl
adhesive
transient
Prior art date
Application number
TW105104515A
Other languages
English (en)
Chinese (zh)
Other versions
TW201632603A (zh
Inventor
Mark S. Oliver
馬克 S 歐利夫
Zhifeng Bai
白志峰
Michael K. Gallagher
麥克 K 加拉格爾
Original Assignee
Rohm And Haas Electronic Materials Llc
羅門哈斯電子材料有限公司
Dow Global Technologies Llc
陶氏全球科技責任有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm And Haas Electronic Materials Llc, 羅門哈斯電子材料有限公司, Dow Global Technologies Llc, 陶氏全球科技責任有限公司 filed Critical Rohm And Haas Electronic Materials Llc
Publication of TW201632603A publication Critical patent/TW201632603A/zh
Application granted granted Critical
Publication of TWI619790B publication Critical patent/TWI619790B/zh

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Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/06Non-macromolecular additives organic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08Macromolecular additives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/50Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2400/00Presence of inorganic and organic materials
    • C09J2400/10Presence of inorganic materials
    • C09J2400/16Metal
    • C09J2400/163Metal in the substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7438Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07351Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07355Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/255Materials of outermost layers of multilayered bumps, e.g. material of a coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/321Structures or relative sizes of die-attach connectors
    • H10W72/325Die-attach connectors having a filler embedded in a matrix
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/353Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW105104515A 2015-03-03 2016-02-16 暫時性黏合 TWI619790B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/636,981 US9644118B2 (en) 2015-03-03 2015-03-03 Method of releasably attaching a semiconductor substrate to a carrier
US14/636,981 2015-03-03

Publications (2)

Publication Number Publication Date
TW201632603A TW201632603A (zh) 2016-09-16
TWI619790B true TWI619790B (zh) 2018-04-01

Family

ID=55262658

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105104515A TWI619790B (zh) 2015-03-03 2016-02-16 暫時性黏合

Country Status (6)

Country Link
US (1) US9644118B2 (https=)
EP (1) EP3065166B1 (https=)
JP (1) JP6346209B2 (https=)
KR (1) KR101767119B1 (https=)
CN (1) CN105938801B (https=)
TW (1) TWI619790B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9296915B1 (en) * 2015-04-10 2016-03-29 Dow Global Technologies Llc Toughened arylcyclobutene polymers
JP7201342B2 (ja) * 2018-06-06 2023-01-10 株式会社ディスコ ウエーハの加工方法
JP2019220550A (ja) 2018-06-19 2019-12-26 株式会社ディスコ ウエーハの加工方法
CN108734154B (zh) * 2018-07-27 2023-08-15 星科金朋半导体(江阴)有限公司 一种超薄指纹识别芯片的封装方法及其封装结构
CN108734156B (zh) * 2018-07-27 2023-08-15 星科金朋半导体(江阴)有限公司 一种超薄指纹识别芯片的封装方法及其封装结构
US12040311B1 (en) * 2022-12-22 2024-07-16 The Boeing Company Substrate debonding from bonded part
WO2025094887A1 (ja) * 2023-11-02 2025-05-08 日産化学株式会社 接着剤組成物、積層体、及び加工された半導体基板の製造方法
TW202603118A (zh) * 2024-03-27 2026-01-16 日商日產化學股份有限公司 接著劑組成物、積層體、及加工後之半導體基板之製造方法
TW202603117A (zh) * 2024-03-27 2026-01-16 日商日產化學股份有限公司 接著劑組成物、積層體、及加工後之半導體基板之製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201144393A (en) * 2010-03-24 2011-12-16 Sekisui Chemical Co Ltd Adhesive composition, adhesive tape, method for processing semiconductor wafer and method for producing tsv wafer
CN103779255A (zh) * 2012-10-25 2014-05-07 罗门哈斯电子材料有限公司 暂时性粘合

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661193A (en) 1984-08-27 1987-04-28 The Dow Chemical Company Adhesive compositions for arylcyclobutene monomeric compositions
US4812588A (en) 1987-12-14 1989-03-14 The Dow Chemical Company Polyorganosiloxane-bridged bisbenzocyclobutene monomers
WO1989006253A1 (fr) 1987-12-25 1989-07-13 Nippon Zeon Co., Ltd. Derive hydrogene d'un copolymere a ouverture de noyaux et procede de production
US5136069A (en) 1991-03-28 1992-08-04 The Dow Chemical Company Process for preparing vinylically-unsaturated compounds (II)
US5138081A (en) 1991-04-30 1992-08-11 The Dow Chemical Company Process for purifying vinylically-unsaturated organosilicon compounds
US5854302A (en) 1993-04-29 1998-12-29 The Dow Chemical Company Partially polymerized divinylsiloxane linked bisbenzocyclobutene resins and methods for making said resins
DE59408507D1 (de) 1993-10-06 1999-08-26 Ticona Gmbh Modifiziertes Cycloolefincopolymer
JPH07118619A (ja) * 1993-10-25 1995-05-09 Sekisui Chem Co Ltd 水溶性粘着剤組成物
EP0854849B1 (en) 1995-09-12 2001-10-31 The Dow Chemical Company Ethynyl substituted aromatic compounds, synthesis, polymers and uses thereof
US5874026A (en) * 1997-12-01 1999-02-23 Calgon Corporation Method of forming corrosion inhibiting films with hydrogenated benzotriazole derivatives
CN1252132C (zh) 2000-07-19 2006-04-19 陶氏环球技术公司 含涂布增强剂的旋布介电层组合物
US6722950B1 (en) * 2000-11-07 2004-04-20 Planar Labs Corporation Method and apparatus for electrodialytic chemical mechanical polishing and deposition
JP4565804B2 (ja) 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
WO2004051708A2 (de) 2002-11-29 2004-06-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und vorrichtung zum bearbeiten eines wafers sowie wafer mit trennschicht und trägerschicht
US6869894B2 (en) 2002-12-20 2005-03-22 General Chemical Corporation Spin-on adhesive for temporary wafer coating and mounting to support wafer thinning and backside processing
JP2005150235A (ja) 2003-11-12 2005-06-09 Three M Innovative Properties Co 半導体表面保護シート及び方法
WO2006093639A1 (en) 2005-03-01 2006-09-08 Dow Corning Corporation Temporary wafer bonding method for semiconductor processing
WO2007099146A1 (de) 2006-03-01 2007-09-07 Jakob + Richter Ip-Verwertungsgesellschaft Mbh Verfahren zum bearbeiten insbesondere dünnen der rückseite eines wafers, wafer-träger-anordnung hierfür und verfahren zur herstellung einer solchen wafer-träger-anordnung
US20080014532A1 (en) 2006-07-14 2008-01-17 3M Innovative Properties Company Laminate body, and method for manufacturing thin substrate using the laminate body
US7713835B2 (en) 2006-10-06 2010-05-11 Brewer Science Inc. Thermally decomposable spin-on bonding compositions for temporary wafer bonding
US20080200011A1 (en) * 2006-10-06 2008-08-21 Pillalamarri Sunil K High-temperature, spin-on, bonding compositions for temporary wafer bonding using sliding approach
JP5863157B2 (ja) * 2006-12-18 2016-02-16 日東電工株式会社 粘着シート
JP5256641B2 (ja) 2007-04-06 2013-08-07 Jsr株式会社 接着剤組成物
TWI418602B (zh) 2007-06-25 2013-12-11 布魯爾科技公司 高溫旋塗暫時結合組成物
US20090017323A1 (en) 2007-07-13 2009-01-15 3M Innovative Properties Company Layered body and method for manufacturing thin substrate using the layered body
WO2009094558A2 (en) 2008-01-24 2009-07-30 Brewer Science Inc. Method for reversibly mounting a device wafer to a carrier substrate
US8092628B2 (en) 2008-10-31 2012-01-10 Brewer Science Inc. Cyclic olefin compositions for temporary wafer bonding
DE102008044200B4 (de) 2008-11-28 2012-08-23 Thin Materials Ag Bonding-Verfahren
DE102008055155A1 (de) 2008-12-23 2010-07-01 Thin Materials Ag Trennverfahren für ein Schichtsystem umfassend einen Wafer
US8764026B2 (en) 2009-04-16 2014-07-01 Suss Microtec Lithography, Gmbh Device for centering wafers
TW201043658A (en) 2009-06-15 2010-12-16 Sumitomo Bakelite Co Temporarily fixing agent for semiconductor wafer and method for producing semiconductor device using the same
TWI479259B (zh) 2009-06-15 2015-04-01 住友電木股份有限公司 A temporary fixing agent for a semiconductor wafer, and a method of manufacturing the semiconductor device using the same
DE102009028025A1 (de) * 2009-07-27 2011-02-03 Henkel Ag & Co. Kgaa Mehrstufiges Verfahren zur Behandlung von Metalloberflächen vor einer Tauchlackierung
KR20120132472A (ko) 2009-12-23 2012-12-05 수스 마이크로텍 리소그라피 게엠바하 자동 열 슬라이드 디본더
KR20120132624A (ko) 2010-02-12 2012-12-06 다우 코닝 코포레이션 반도체 가공을 위한 임시 웨이퍼 접합 방법
JP2011168663A (ja) 2010-02-17 2011-09-01 Sumitomo Bakelite Co Ltd 有機基板の仮固定剤及びそれを用いた半導体装置の製造方法
US7883991B1 (en) 2010-02-18 2011-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Temporary carrier bonding and detaching processes
US8852391B2 (en) 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
US8461017B2 (en) 2010-07-19 2013-06-11 Soitec Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region
KR20120055601A (ko) 2010-08-06 2012-05-31 닛토덴코 가부시키가이샤 전자 부품의 제조 방법
US9263314B2 (en) 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
DE102011079687A1 (de) 2011-07-22 2013-01-24 Wacker Chemie Ag Temporäre Verklebung von chemisch ähnlichen Substraten
US8696864B2 (en) 2012-01-26 2014-04-15 Promerus, Llc Room temperature debonding composition, method and stack
EP2922582A1 (en) * 2012-11-21 2015-09-30 Boston Scientific Scimed, Inc. Ionic hydrophilic polymer coatings for use in medical devices
US9315696B2 (en) * 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
DE102019205487A1 (de) 2019-04-16 2020-10-22 Robert Bosch Gmbh Teilnehmerstation für ein serielles Bussystem und Verfahren zur Kommunikation in einem seriellen Bussystem

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201144393A (en) * 2010-03-24 2011-12-16 Sekisui Chemical Co Ltd Adhesive composition, adhesive tape, method for processing semiconductor wafer and method for producing tsv wafer
CN103779255A (zh) * 2012-10-25 2014-05-07 罗门哈斯电子材料有限公司 暂时性粘合

Also Published As

Publication number Publication date
JP2016174145A (ja) 2016-09-29
KR20160107097A (ko) 2016-09-13
CN105938801A (zh) 2016-09-14
US9644118B2 (en) 2017-05-09
EP3065166A1 (en) 2016-09-07
EP3065166B1 (en) 2025-01-22
JP6346209B2 (ja) 2018-06-20
US20160257861A1 (en) 2016-09-08
TW201632603A (zh) 2016-09-16
KR101767119B1 (ko) 2017-08-24
CN105938801B (zh) 2019-09-20

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