CN105938801B - 一种暂时性粘合的方法，组合物及结构 - Google Patents

一种暂时性粘合的方法，组合物及结构 Download PDF

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Publication number
CN105938801B
CN105938801B CN201610091933.5A CN201610091933A CN105938801B CN 105938801 B CN105938801 B CN 105938801B CN 201610091933 A CN201610091933 A CN 201610091933A CN 105938801 B CN105938801 B CN 105938801B
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copper
alkyl
adhesive
semiconductor substrate
amino
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CN105938801A (zh
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M·S·奥利弗
Z·白
M·K·加拉格尔
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Dow Global Technologies LLC
DuPont Electronic Materials International LLC
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Dow Global Technologies LLC
Rohm and Haas Electronic Materials LLC
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2400/00—Presence of inorganic and organic materials
    • C09J2400/10—Presence of inorganic materials
    • C09J2400/16—Metal
    • C09J2400/163—Metal in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7438—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07355—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/255—Materials of outermost layers of multilayered bumps, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201610091933.5A 2015-03-03 2016-02-19 一种暂时性粘合的方法，组合物及结构 Active CN105938801B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/636981 2015-03-03
US14/636,981 US9644118B2 (en) 2015-03-03 2015-03-03 Method of releasably attaching a semiconductor substrate to a carrier

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CN105938801A CN105938801A (zh) 2016-09-14
CN105938801B true CN105938801B (zh) 2019-09-20

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US (1) US9644118B2 (https=)
EP (1) EP3065166B1 (https=)
JP (1) JP6346209B2 (https=)
KR (1) KR101767119B1 (https=)
CN (1) CN105938801B (https=)
TW (1) TWI619790B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9296915B1 (en) * 2015-04-10 2016-03-29 Dow Global Technologies Llc Toughened arylcyclobutene polymers
JP7201342B2 (ja) * 2018-06-06 2023-01-10 株式会社ディスコ ウエーハの加工方法
JP2019220550A (ja) 2018-06-19 2019-12-26 株式会社ディスコ ウエーハの加工方法
CN108734154B (zh) * 2018-07-27 2023-08-15 星科金朋半导体（江阴）有限公司 一种超薄指纹识别芯片的封装方法及其封装结构
CN108734156B (zh) * 2018-07-27 2023-08-15 星科金朋半导体（江阴）有限公司 一种超薄指纹识别芯片的封装方法及其封装结构
US12040311B1 (en) * 2022-12-22 2024-07-16 The Boeing Company Substrate debonding from bonded part
WO2025094887A1 (ja) * 2023-11-02 2025-05-08 日産化学株式会社 接着剤組成物、積層体、及び加工された半導体基板の製造方法
TW202603118A (zh) * 2024-03-27 2026-01-16 日商日產化學股份有限公司 接著劑組成物、積層體、及加工後之半導體基板之製造方法
TW202603117A (zh) * 2024-03-27 2026-01-16 日商日產化學股份有限公司 接著劑組成物、積層體、及加工後之半導體基板之製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07118619A (ja) * 1993-10-25 1995-05-09 Sekisui Chem Co Ltd 水溶性粘着剤組成物
CN1280606A (zh) * 1997-12-01 2001-01-17 卡尔贡公司 氢化苯并三唑衍生物腐蚀抑制膜的形成方法
CN101535435A (zh) * 2006-12-18 2009-09-16 日东电工株式会社 粘合片
CN102482783A (zh) * 2009-07-27 2012-05-30 汉高股份有限及两合公司 在浸涂前处理金属表面的多步骤方法
CN102741983A (zh) * 2010-08-06 2012-10-17 日东电工株式会社 电子部件的制造方法
CN103779255A (zh) * 2012-10-25 2014-05-07 罗门哈斯电子材料有限公司 暂时性粘合

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661193A (en) 1984-08-27 1987-04-28 The Dow Chemical Company Adhesive compositions for arylcyclobutene monomeric compositions
US4812588A (en) 1987-12-14 1989-03-14 The Dow Chemical Company Polyorganosiloxane-bridged bisbenzocyclobutene monomers
WO1989006253A1 (fr) 1987-12-25 1989-07-13 Nippon Zeon Co., Ltd. Derive hydrogene d'un copolymere a ouverture de noyaux et procede de production
US5138081A (en) 1991-04-30 1992-08-11 The Dow Chemical Company Process for purifying vinylically-unsaturated organosilicon compounds
US5136069A (en) 1991-03-28 1992-08-04 The Dow Chemical Company Process for preparing vinylically-unsaturated compounds (II)
US5854302A (en) 1993-04-29 1998-12-29 The Dow Chemical Company Partially polymerized divinylsiloxane linked bisbenzocyclobutene resins and methods for making said resins
DE59408507D1 (de) 1993-10-06 1999-08-26 Ticona Gmbh Modifiziertes Cycloolefincopolymer
CA2231726A1 (en) 1995-09-12 1997-03-20 Dennis W. Smith, Jr. Ethynyl substituted aromatic compounds, synthesis, polymers and uses thereof
KR100741648B1 (ko) 2000-07-19 2007-07-24 다우 글로벌 테크놀로지스 인크. 피막 증강제를 함유하는 스핀-온-유전성 조성물
US6722950B1 (en) * 2000-11-07 2004-04-20 Planar Labs Corporation Method and apparatus for electrodialytic chemical mechanical polishing and deposition
JP4565804B2 (ja) 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
AU2003299296A1 (en) 2002-11-29 2004-06-23 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
US6869894B2 (en) 2002-12-20 2005-03-22 General Chemical Corporation Spin-on adhesive for temporary wafer coating and mounting to support wafer thinning and backside processing
JP2005150235A (ja) 2003-11-12 2005-06-09 Three M Innovative Properties Co 半導体表面保護シート及び方法
KR101278460B1 (ko) 2005-03-01 2013-07-02 다우 코닝 코포레이션 반도체 가공을 위한 임시 웨이퍼 접착방법
US8911583B2 (en) 2006-03-01 2014-12-16 Thin Materials Ag Method for processing, in particular, thin rear sides of a wafer, wafer-carrier arrangement and method for producing said type of wafer-carrier arrangement
US20080014532A1 (en) 2006-07-14 2008-01-17 3M Innovative Properties Company Laminate body, and method for manufacturing thin substrate using the laminate body
US7713835B2 (en) 2006-10-06 2010-05-11 Brewer Science Inc. Thermally decomposable spin-on bonding compositions for temporary wafer bonding
US20080200011A1 (en) * 2006-10-06 2008-08-21 Pillalamarri Sunil K High-temperature, spin-on, bonding compositions for temporary wafer bonding using sliding approach
JP5256641B2 (ja) 2007-04-06 2013-08-07 Ｊｓｒ株式会社 接着剤組成物
US7935780B2 (en) 2007-06-25 2011-05-03 Brewer Science Inc. High-temperature spin-on temporary bonding compositions
US20090017323A1 (en) 2007-07-13 2009-01-15 3M Innovative Properties Company Layered body and method for manufacturing thin substrate using the layered body
US9111981B2 (en) 2008-01-24 2015-08-18 Brewer Science Inc. Method for reversibly mounting a device wafer to a carrier substrate
US8092628B2 (en) 2008-10-31 2012-01-10 Brewer Science Inc. Cyclic olefin compositions for temporary wafer bonding
DE102008044200B4 (de) 2008-11-28 2012-08-23 Thin Materials Ag Bonding-Verfahren
DE102008055155A1 (de) 2008-12-23 2010-07-01 Thin Materials Ag Trennverfahren für ein Schichtsystem umfassend einen Wafer
US8267143B2 (en) 2009-04-16 2012-09-18 Suss Microtec Lithography, Gmbh Apparatus for mechanically debonding temporary bonded semiconductor wafers
KR20100134492A (ko) 2009-06-15 2010-12-23 스미토모 베이클리트 컴퍼니 리미티드 반도체 웨이퍼의 가고정제 및 그것을 이용한 반도체 장치의 제조 방법
TWI479259B (zh) 2009-06-15 2015-04-01 住友電木股份有限公司 A temporary fixing agent for a semiconductor wafer, and a method of manufacturing the semiconductor device using the same
EP2517237A2 (en) 2009-12-23 2012-10-31 Süss Microtec Lithography GmbH Automated thermal slide debonder
KR20120132624A (ko) 2010-02-12 2012-12-06 다우 코닝 코포레이션 반도체 가공을 위한 임시 웨이퍼 접합 방법
JP2011168663A (ja) 2010-02-17 2011-09-01 Sumitomo Bakelite Co Ltd 有機基板の仮固定剤及びそれを用いた半導体装置の製造方法
US7883991B1 (en) 2010-02-18 2011-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Temporary carrier bonding and detaching processes
KR101578575B1 (ko) 2010-03-24 2015-12-17 세키스이가가쿠 고교가부시키가이샤 접착제 조성물, 접착 테이프, 반도체 웨이퍼의 처리 방법 및 tsv 웨이퍼의 제조 방법
US8852391B2 (en) 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
US8461017B2 (en) 2010-07-19 2013-06-11 Soitec Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region
US9263314B2 (en) 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
DE102011079687A1 (de) 2011-07-22 2013-01-24 Wacker Chemie Ag Temporäre Verklebung von chemisch ähnlichen Substraten
US8696864B2 (en) 2012-01-26 2014-04-15 Promerus, Llc Room temperature debonding composition, method and stack
CN104936628B (zh) * 2012-11-21 2019-03-01 波士顿科学国际有限公司 用于医疗器械的离子亲水性聚合物涂层
US9315696B2 (en) * 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
DE102019205487A1 (de) 2019-04-16 2020-10-22 Robert Bosch Gmbh Teilnehmerstation für ein serielles Bussystem und Verfahren zur Kommunikation in einem seriellen Bussystem

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07118619A (ja) * 1993-10-25 1995-05-09 Sekisui Chem Co Ltd 水溶性粘着剤組成物
CN1280606A (zh) * 1997-12-01 2001-01-17 卡尔贡公司 氢化苯并三唑衍生物腐蚀抑制膜的形成方法
CN101535435A (zh) * 2006-12-18 2009-09-16 日东电工株式会社 粘合片
CN102482783A (zh) * 2009-07-27 2012-05-30 汉高股份有限及两合公司 在浸涂前处理金属表面的多步骤方法
CN102741983A (zh) * 2010-08-06 2012-10-17 日东电工株式会社 电子部件的制造方法
CN103779255A (zh) * 2012-10-25 2014-05-07 罗门哈斯电子材料有限公司 暂时性粘合

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TWI619790B (zh) 2018-04-01
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US9644118B2 (en) 2017-05-09
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