TWI617408B - 分斷裝置 - Google Patents

分斷裝置 Download PDF

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Publication number
TWI617408B
TWI617408B TW105125053A TW105125053A TWI617408B TW I617408 B TWI617408 B TW I617408B TW 105125053 A TW105125053 A TW 105125053A TW 105125053 A TW105125053 A TW 105125053A TW I617408 B TWI617408 B TW I617408B
Authority
TW
Taiwan
Prior art keywords
ring
platform
cutting
cutting ring
pressing
Prior art date
Application number
TW105125053A
Other languages
English (en)
Chinese (zh)
Other versions
TW201726342A (zh
Inventor
takuro Mitani
Houhi Kaku
Original Assignee
Mitsuboshi Diamond Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsuboshi Diamond Ind Co Ltd filed Critical Mitsuboshi Diamond Ind Co Ltd
Publication of TW201726342A publication Critical patent/TW201726342A/zh
Application granted granted Critical
Publication of TWI617408B publication Critical patent/TWI617408B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0052—Means for supporting or holding work during breaking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/042—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with blades or wires mounted in a reciprocating frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)
TW105125053A 2016-01-22 2016-08-05 分斷裝置 TWI617408B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016010475A JP6668776B2 (ja) 2016-01-22 2016-01-22 ブレイク装置

Publications (2)

Publication Number Publication Date
TW201726342A TW201726342A (zh) 2017-08-01
TWI617408B true TWI617408B (zh) 2018-03-11

Family

ID=59394409

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105125053A TWI617408B (zh) 2016-01-22 2016-08-05 分斷裝置

Country Status (4)

Country Link
JP (1) JP6668776B2 (ja)
KR (1) KR101833769B1 (ja)
CN (1) CN106994754B (ja)
TW (1) TWI617408B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109624109A (zh) * 2019-02-20 2019-04-16 广州安特激光技术有限公司 一种晶圆片切割装置的承载台

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50183B1 (ja) * 1970-03-26 1975-01-07
TW201009919A (en) * 2008-08-11 2010-03-01 Disco Corp Method of processing optical device wafer
WO2010087424A1 (ja) * 2009-01-30 2010-08-05 三星ダイヤモンド工業株式会社 基板ブレーク装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4227348A (en) * 1978-12-26 1980-10-14 Rca Corporation Method of slicing a wafer
JPH062684U (ja) * 1992-06-03 1994-01-14 日新ハイボルテージ株式会社 イオン注入装置用ウエファサイズ変換アダプタ
JP3042604B2 (ja) * 1997-02-04 2000-05-15 サンケン電気株式会社 半導体ウエハ組立体切断法及び半導体ウエハ用ワイヤソー切断機
JPH10284443A (ja) * 1997-04-08 1998-10-23 Hitachi Ltd ブレーキング方法および装置
JP3657190B2 (ja) * 2000-11-13 2005-06-08 Ｎｅｃセミコンパッケージ・ソリューションズ株式会社 エキスパンド装置
AU2003246209A1 (en) * 2002-07-01 2004-01-19 Mitsuboshi Diamond Industrial Co., Ltd. Device and method for scribing substrate of brittle material
JP4502260B2 (ja) * 2004-10-28 2010-07-14 株式会社ディスコ スピンナー洗浄装置及びダイシング装置
DE102005028112A1 (de) * 2005-06-13 2006-12-21 Schmid Technology Systems Gmbh Verfahren zur Positionierung und Lageerhaltung von Substraten, insbesondere von dünnen Siliziumwafern nach dem Drahtsägen zu deren Vereinzelung
DE102006032432B3 (de) * 2006-07-13 2007-09-27 Siltronic Ag Sägeleiste sowie Verfahren zum gleichzeitigen Abtrennen einer Vielzahl von Scheiben von einem zylindrischen Werkstück unter Verwendung der Sägeleiste
FR2961014A1 (fr) * 2010-06-08 2011-12-09 St Microelectronics Tours Sas Procede de fabrication de puces semiconductrices a partir d'une tranche semiconductrice

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50183B1 (ja) * 1970-03-26 1975-01-07
TW201009919A (en) * 2008-08-11 2010-03-01 Disco Corp Method of processing optical device wafer
WO2010087424A1 (ja) * 2009-01-30 2010-08-05 三星ダイヤモンド工業株式会社 基板ブレーク装置

Also Published As

Publication number Publication date
JP2017128081A (ja) 2017-07-27
JP6668776B2 (ja) 2020-03-18
KR20170088269A (ko) 2017-08-01
CN106994754A (zh) 2017-08-01
KR101833769B1 (ko) 2018-03-02
CN106994754B (zh) 2019-03-12
TW201726342A (zh) 2017-08-01

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