TWI665070B - Breaking device - Google Patents
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- TWI665070B TWI665070B TW105125054A TW105125054A TWI665070B TW I665070 B TWI665070 B TW I665070B TW 105125054 A TW105125054 A TW 105125054A TW 105125054 A TW105125054 A TW 105125054A TW I665070 B TWI665070 B TW I665070B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
- B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0052—Means for supporting or holding work during breaking
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
Abstract
本發明之課題係於分斷裝置中,可將載置有脆性材料基板之平台旋轉180°以上。
將保持著成為分斷對象之脆性材料基板之切割環保持於平台47上。平台47係被保持於於外周部分形成有齒輪之圓形之齒輪45之內側,可藉由驅動單元34使平台47旋轉180°以上。以位於齒輪45及平台47之鏈線纜33之上部之方式配置,且藉由將鏈線纜33之長度較先前更為加長而確保180°以上之旋轉角度。
Description
本發明係關於分斷經由黏著材料安裝於切割環之脆性材料基板之分斷裝置,尤其係關於可以任意之角度將脆性材料基板載置於平台之分斷裝置者。
於專利文獻1,揭示有將設置半導體晶圓之切割環保持於平台上,且自其上部按壓分斷條而分斷之分斷裝置。於該分斷裝置中,於保持於平台上之切割環之半導體晶圓預先以格子狀形成劃線。於將基板分斷成格子狀之情形,沿著1條劃線按壓分斷條而進行分斷。且,於一定方向平行地移動平台,且依次沿著多條劃線而分斷半導體晶圓。接著使平台旋轉約90°,沿著垂直於已分斷之劃線之劃線同樣地依次按壓分斷條而進行分斷,且於一定方向平行地移動平台。如此依次沿著多條劃線分斷半導體晶圓。
[專利文獻1]日本專利特開2014-83821號公報
於如此之先前之分斷裝置中,若結束某方向之分斷則有必要使平台90°旋轉,但平台可旋轉之角度僅限於約90°。因此於開始分斷前以已經形成之劃線與分斷條正確平行之方式載置切割環,於全部結束
沿著與分斷條平行之全部劃線之分斷後,有必要將平台90°旋轉,將分斷條與其他劃線平行後進行分斷。
最初劃線未以與分斷條正確平行之方式載置,適當地將切割環載置於平台者可於短時間結束載置。於該情形若劃線以與分斷條平行之方式旋轉後進行分斷,則於該分斷結束後,有必要進而90°旋轉平台而沿著剩餘之劃線進行分斷。因此,以該方法有必要將平台以最大限度180°旋轉。
本發明係著眼於此種問題點而完成者,其目的在於提供一種可180°以上旋轉平台之分斷裝置。
為了解決該課題,本發明之分斷裝置係分斷形成有劃線之脆性材料基板者,且具備:平台,其保持上述脆性材料基板;轉動機構,其使上述平台至少旋轉180°;平行移動機構,其使上述平台沿著其面平行移動;升降機構,其使分斷條相對於上述平台上之脆性材料基板之劃線升降;及控制機構,其以如下方式進行控制:藉由上述轉動機構使上述平台旋轉,且藉由上述平行移動機構使上述平台水平移動而與劃線一致,而使分斷條下降。
此處上述分斷裝置亦可具備監視被保持於上述平台上之脆性材料基板之劃線之相機,且上述控制機構係基於自上述相機獲得之脆性材料基板之圖像,以使劃線與分斷條平行之方式藉由上述轉動機構使平台旋轉者。
此處上述轉動機構亦可為具有:基環,其將上述平台旋轉自由地保持;驅動單元,其具有驅動齒輪,且使上述平台旋轉;及齒輪,其設置於上述基環,至少形成有180°之齒且與上述驅動單元之驅動齒輪嚙合者。
此處上述轉動機構亦可為包含:驅動單元,其具有驅動齒輪,
且使上述平台旋轉;基台,其保持貫通孔及上述驅動單元;圓形之交叉滾柱軸承,其係外環安裝於上述基台之貫通孔,且將內環設為自由旋轉;基環,其安裝於上述交叉滾柱軸承之內環;齒輪,其設置於上述基環之外周,至少形成有180°之齒,且與上述驅動單元之驅動齒輪嚙合;平台,其被保持於上述基環;及環壓制單元,其設置於上述基環之平台之外周部,且藉由轉動自由之臂而保持具有上述脆性材料基板之切割環者。
根據具有如此特徵之本發明之分斷裝置,可將平台旋轉180°以上。又,於請求項2之發明中,即使任意角度將切割環配置於平台上,亦可藉由相機確認環上之劃線。因此,可於劃線以與分斷條平行之方式旋轉驅動後,進行分斷。如此於將切割環載置於平台時,無須正確地平行地配置劃線與分斷條,可獲得可大幅提升作業效率之效果。
10‧‧‧分斷裝置
11‧‧‧載台
12‧‧‧Y軸移動機構
13‧‧‧水平固定構件
14‧‧‧伺服馬達
15‧‧‧滾珠螺桿
16‧‧‧水平固定構件
17‧‧‧上移動構件
18‧‧‧螺母
19a‧‧‧支持軸
19b‧‧‧支持軸
20‧‧‧下移動構件
21‧‧‧分斷條
30‧‧‧旋轉機構
31‧‧‧基台
31a‧‧‧貫通孔
31b‧‧‧缺口
32‧‧‧托架
33‧‧‧鏈線纜
34‧‧‧驅動單元
41‧‧‧交叉滾柱軸承
42‧‧‧環
43‧‧‧下基環
44‧‧‧上基環
44a‧‧‧環
44b‧‧‧環
44d‧‧‧缺口
44e‧‧‧缺口
44f‧‧‧缺口
45‧‧‧齒輪
46‧‧‧環
47‧‧‧平台
48‧‧‧平台固定塊
49‧‧‧塊
51‧‧‧切割環
52‧‧‧彈性板
53‧‧‧保護定位板
54‧‧‧彈性板
55‧‧‧切割環
60‧‧‧環壓制單元
61‧‧‧托架
62‧‧‧缸體
63‧‧‧臂
64‧‧‧壓臂
65‧‧‧壓板
66‧‧‧螺栓
67‧‧‧壓臂
71‧‧‧支柱
72‧‧‧相機
73‧‧‧相機
80‧‧‧控制器
81‧‧‧圖像處理部
82‧‧‧控制部
83‧‧‧輸入部
84‧‧‧監視器
85‧‧‧分斷條驅動部
86‧‧‧平台旋轉驅動部
87‧‧‧Y軸驅動部
88‧‧‧馬達
89‧‧‧馬達
y‧‧‧方向
圖1係本發明之實施形態之分斷裝置之概略立體圖。
圖2係本實施形態之旋轉機構之平台部分之俯視圖。
圖3係顯示本實施形態之旋轉機構之立體圖。
圖4係顯示切離本實施形態之旋轉機構之上部塊與下部塊之立體圖。
圖5係本實施形態之旋轉機構之下部塊之組裝構成圖。
圖6係顯示本實施形態之旋轉機構之上部塊之詳細組裝構成圖。
圖7係本實施形態之旋轉機構之側視圖。
圖8係顯示將平台固定於本實施形態之旋轉機構之上基環之狀態之部分立體圖。
圖9係顯示本實施形態之旋轉機構之環壓制單元與其周邊部分之
立體圖(其1)。
圖10係顯示本實施形態之旋轉機構之環壓制單元與其周邊部分之立體圖(其2)。
圖11係顯示於本實施形態之分斷裝置中切割環之更換過程之俯視圖(其1)。
圖12係顯示於本實施形態之分斷裝置中切割環之更換過程之俯視圖(其2)。
圖13係顯示於本實施形態之分斷裝置中切割環之更換過程之俯視圖(其3)。
圖14係顯示於本實施形態之分斷裝置中切割環之更換過程之俯視圖(其4)。
圖15係顯示於本實施形態之分斷裝置中切割環之更換過程之俯視圖(其5)。
圖16係顯示本實施形態之分斷裝置之概略圖之側視圖。
圖17係顯示本實施形態之分斷裝置之控制器之方塊圖。
接著,針對本發明之實施形態之分斷裝置10進行說明。分斷裝置10包含圖1所示之可向y軸正及負方向移動之載台11。於載台11之下方設置有將載台11沿著該面向y軸方向移動,進而沿著該面進行旋轉之Y軸移動機構12。於載台11之上部設置有字狀之水平固定構件13,且於其上部保持伺服馬達14。於伺服馬達14之旋轉軸直接連結滾珠螺桿15,滾珠螺桿15之下端以滾珠螺桿15可旋轉之方式受支持於另一水平固定構件16。上移動構件17於中央部具備螺合於滾珠螺桿15之螺母18,且具備自其兩端部朝向下方之支持軸19a、19b。支持軸19a、19b貫通水平固定構件16之一對貫通孔而連結於下移動構件20。於下移動構件20之下表面安裝有未圖示之分斷條。分斷條係細長之平
板,且將前端銳利化之金屬製之刀刃狀之構件,且以前端部分為下方之方式垂直於載台11之面地安裝於下移動構件20。如此於藉由伺服馬達14使滾珠螺桿15旋轉之情形時,上移動構件17與下移動構件20一體地上下移動,且分斷條亦同時上下移動。此處,伺服馬達14、水平固定構件13、16及上下移動構件17、20構成使分斷條升降之升降機構。
接著,針對設置於載台11之旋轉機構30進行說明。圖2係旋轉機構30之俯視圖,圖3係其立體圖,圖4係顯示分離其上部塊與下部塊之狀態之立體圖。又,圖5係下部塊之組裝構成圖。如圖5所示,於下部之基台31設置有圓形之帶有階之貫通孔31a與側方之缺口31b。如圖4所示,於基台31之側方安裝有圓弧狀之托架32與鏈線纜33(亦可稱為纜線導管,包含CABLEVEYOR(註冊商標))。鏈線纜33為柔軟之構件,且係用以對後述之環壓制單元供給電源者。又於基台31之缺口31b安裝設置有用以使平台旋轉之馬達或齒輪之驅動單元34。
接著,圖6係顯示圖4所示之上部塊之詳細分解立體圖。於上部塊之最下部設置有環狀軸承即交叉滾柱軸承41,且於其上部設置有環42。交叉滾柱軸承41係經由軸承而連結內環與外環,可藉由固定外環減小摩擦而使內環自由地旋轉。交叉滾柱軸承41插入於基台31之貫通孔31a內,其下部被保持在階差部分。環42係藉由自上部夾入交叉滾柱軸承41之外環且螺止於基台31,而固定交叉滾柱軸承41之外環者。下基環43係將環狀之環與直徑較小且向下方突出之突出環部分一體化而成者,下部之突出部插入於交叉滾柱軸承41之內環之內側且藉由上部而固定於內環。又,於下基環43之上部固定上基環44。上基環44係將環狀之環44a與直徑較小且向其上方突出之環44b一體化而成者,上部之突出環44於四方設置有缺口44c~44f。於上基環44之上部之突出環44b之外周部分安裝齒輪45。齒輪45係如圖示般於全周形成有齒輪之環狀之齒輪,與驅動單元34之驅動齒輪嚙合。於上基環44安裝有另
一環46。於環46之內側形成有階,將透明玻璃製之平台47嵌入保持於該階差之內側。平台47係保持要分斷之基板之圓形之構件,且設為與切割環大致同徑者,此處約為12英吋之徑。
接著,圖7係顯示該旋轉機構整體之側視圖,顯示除去托架32之狀態。如本圖所示般於基台31上設置有鏈線纜33,於鏈線纜33之上部設置有齒輪45。此處,顯示將8英吋用之切割環安裝於平台47上之狀態。此處,藉由下基環43與上基環44,構成較基台31之上表面更高地保持平台47與齒輪45之基環。
圖8係顯示於安裝後述之環壓制單元60之前將平台47安裝於上基環44之狀態之立體圖。於平台47之外周,如圖6所示設置有4個平台固定塊48與4個塊49。平台固定塊48係用以保持平台47之L字狀之塊,介隔環46以螺栓固定於上基環44。塊49係用以保持切割環者,介隔環46以螺栓固定於上基環44。
接著,於將12英吋之基板用之第1切割環51設置於平台47上之情形,如圖6所示介隔第1彈性板52直接將切割環51安裝固定於平台47之上表面。於將保持8英吋之基板之第2切割環安裝於平台47上之情形,使用保護定位板53。保護定位板53係較第2切割環更大外徑,此處為大致等於平台之尺寸之約12英吋之環狀薄平板,且於中央部設置有供第2彈性板54插入之開口。於安裝保持8英吋之基板之第2切割環55之情形,將保護定位板53保持於平台47上,將第2彈性板54插入於其開口,且自其上部安裝8英吋用之切割環55。第1切割環51或第2切割環55於載置於平台47之周圍之塊49後,以設置於平台周圍之4個環壓制單元60保持。第1,第2彈性板52、54係橡膠製等具有彈性之圓板,且為了自下側之相機可確認基板之劃線而採用透明體。
圖9、圖10係顯示環壓制單元60與其周邊部分之詳細立體圖。環壓制單元60係分別安裝於上基環44之4個缺口44c~44f,於圖9、圖10
中顯示其中1個。於圖9、圖10中環壓制單元60安裝於上基環44之上部環44b之缺口44c。環壓制單元60於L字形之托架61安裝有缸體62。缸體62係內置馬達且使其軸90°轉動者。於缸體62之軸設置有臂63。於臂63介隔壓板65以螺栓66安裝壓臂64或67。
為了將12英吋用之第1切割環51保持於平台47上,如圖9所示介隔壓板65且藉由螺栓66將壓臂64固定於臂63。為了將8英吋用之第2切割環55保持於平台47上,如圖10所示介隔壓板65且藉由螺栓66將壓臂67固定於臂63。臂63與壓臂64或67藉由缸體62內之馬達於順時針方向及逆時針方向90°旋轉。且壓臂之前端抵接於塊49之上部,於其間藉由夾著未圖示之切割環之端部而固定切割環51或55。此處經由上述之鏈線纜33對4個環壓制單元60供給電源。
於本實施形態中,成為分斷對象之脆性材料基板係採用半導體晶圓。半導體晶圓為了分離成晶片而藉由圓環之框狀體即切割環51或55保持。於各自之切割環之內側向上貼附有具有黏著材料之黏著膠帶,且於其上表面中央保持成為分斷對象之圓形之半導體晶圓。於半導體晶圓預先以格子狀形成多條劃線。
於本實施形態之旋轉機構30中,為了可將平台47旋轉180°以上,使用於全周設置有齒之齒輪45。又,如圖7所示,以位於鏈線纜33之上部之方式配置平台之旋轉機構,且藉由鏈線纜33之長度較先前更長而確保旋轉機構整體之尺寸不會變大且旋轉角度為180°以上。
圖11~圖15係顯示自12英吋用切割環51更換為8英吋用切割環55之過程之圖。首先於圖11中12英吋之切割環51安裝於平台47上,藉由環壓制單元60之12英吋用之短壓臂64固定切割環51之周圍。將此作為第1狀態。此處,於自12英吋之切割環51更換為8英吋用之切割環55之情形,首先如圖12所示將4個環壓制單元60之壓臂64轉動90°並朝上。藉此可卸除12英吋之切割環51。因此,同時卸除切割環51與其下部之
彈性板52。接著如圖13所示將環狀之保護定位板53載置於玻璃平台47之上部。進而如圖14所示將環壓制單元60之臂更換為較長之8英吋用之壓臂67。接著,將8英吋用之彈性板54載置於保護定位板53之中央之開口部分,如圖15所示將切割環55配置於塊49上,且藉由轉動壓臂67固定切割環55之周圍。將此作為第2狀態。如此,可使用同一分斷裝置將8英吋用與12英吋用之任一切割環51或55固定於平台47上。
接著於該實施形態中,如圖16中顯示分斷裝置整體之概略圖般,於水平固定構件13水平設置有支柱71,於該支柱71朝下方設置有相機72。該相機72係檢測切割環上之半導體晶圓之劃線狀態者。又如圖中虛線所示,於水平固定構件13之下方之壓下分斷條之位置之側下方設置有自下方向平台上之半導體晶圓進行拍攝而檢測劃線之相機73。
接著針對本實施形態之分斷裝置之控制器之構成使用方塊圖進行說明。圖17係分斷裝置之控制器80之方塊圖。控制器80係控制平台之旋轉與平行移動及分斷條之升降之控制機構。於本圖中,來自相機72、73之輸出係經由控制器80之圖像處理部81而被賦予至控制部82。輸入部83係輸入與脆性材料基板之分斷相關之資料者。於控制部82連接有監視器84、用以使分斷條上下移動之分斷條驅動部85、用以使平台旋轉之平台旋轉驅動部86、及Y軸驅動部87。分斷條驅動部85係驅動伺服馬達14而使分斷條上下移動者。又平台旋轉驅動部86係驅動設置於基台31之驅動單元34之馬達88者。Y軸驅動部87係驅動使載台11向y軸方向驅動之馬達89者。
此處,上述圖2所示之旋轉機構30與圖17所示之平台旋轉驅動部86及馬達88構成使平台至少180°旋轉之轉動機構。Y軸移動機構12與Y軸驅動部87及馬達89構成使載台向y軸方向移動之平行移動機構。又,上述升降機構與分斷條驅動部85構成使分斷條相對於劃線升降之
升降機構。
接著針對半導體晶圓之分斷方法進行說明。首先於載台11將任一切割環例如切割環51設置於旋轉機構之平台47上。採用於切割環51預先載置有半導體晶圓者。於該狀態下如圖16所示以相機72檢測半導體晶圓之劃線。接著以使分斷條與形成之劃線平行之方式,經由平台旋轉驅動部86驅動控制單元34之馬達88而使平台47旋轉。
若分斷條與劃線成為平行狀態,則驅動Y軸驅動部87,以最外側之劃線位於分斷條之正下方之方式使載台11向y軸方向移動。若劃線在分斷條之正下方,則使用分斷條驅動部85驅動伺服馬達14,使上移動構件17與下移動構件20同時降低,一面相對於載台11垂直保持分斷條一面緩緩下降,藉由沿著半導體晶圓之劃線按壓刀尖進行分斷。如此彈性板52經分斷條按壓而略變形為V字狀。且藉由使分斷條充分下降,沿著劃線完成分斷。若分斷完成,則使伺服馬達14反轉而使分斷條上升。然後使分斷條一度上升,將Y軸驅動部87驅動,僅將平台移動相當於鄰接之劃線之間隔之長度,成為任一劃線位於分斷條之正下方。且,若鄰接之劃線與分斷條成為平行狀態,則使用分斷條驅動部85將分斷條向下方向驅動,藉由沿著半導體晶圓之劃線按壓刀尖而分斷。如此藉由分斷條之升降與向y軸方向之折返移動,可針對一定方向之劃線完成全部之分斷。
接著若完成該一定方向之分斷,則藉由平台旋轉驅動部86使載台11自現在之位置90°旋轉,再次以與已分斷之劃線垂直之劃線平行於分斷條之方式設定。且可同樣地藉由沿著劃線按壓分斷條進行分斷。然後使載台11向y軸方向僅移動劃線之間距距離,同樣地使分斷條21下降。如此藉由分斷條之升降與向y軸方向之折返移動,可完成整面之分斷,將半導體晶圓分斷成格子狀。
如此於設置切割環之步驟中劃線與分斷條無須以正確平行之方
式載置,可獲得可大幅簡化作業步驟之效果。
另於該實施形態中,雖成為分斷對象之脆性材料基板係採用半導體晶圓進行說明,但其他脆性材料基板同樣可適用本發明。
另於該實施形態中,因將經劃線之半導體晶圓載置於可180°旋轉之平台上,故於載置時無須符合於以與切割環之直線狀之邊平行之方式載置劃線之時,簡單地載置於平台47上即可。其後藉由適當地旋轉平台47,可將切割環上之半導體晶圓之劃線與分斷條平行,且可沿著劃線進行分斷。
另,於本實施形態中齒輪45雖為於全周形成齒者,但因以180°以上旋轉平台47之方式構成即可,故齒輪45亦可為至少於半周以上之外周部形成齒之齒輪。
又於本實施形態中,劃線雖採用正交者,但無需一定以正交之方式形成。劃線亦可以任意之角度交叉之方式形成,並對準於該線而進行分斷,可獲得菱形或三角形等之形狀之晶片。
進而於該實施形態中,雖將半導體晶圓保持於張開於環狀之切割環之黏著膠帶上,但因為可保持於平台上者即可,故並無必要必須使用切割環等。
於設為簡單將平台旋轉180°以上者之情形,並非必須有相機72、73。又於不使用相機72之情形,將任一切割環保持於平台上,且以Y軸驅動部87將平台47移動至分斷條之正下方後,亦可藉由相機73檢測劃線並以與分斷條平行之方式轉動平台。於如此檢測劃線使劃線與分斷條平行之情形,有任一相機即可。
又,於該實施形態中雖將平台保持為較大之齒輪狀,但於自由地旋轉平台時並未限定於齒輪之驅動,例如亦可使用皮帶或轉盤而自由旋轉。
本發明因可使用分斷裝置正確地分斷半導體晶圓等之脆性材料基板,故適於精密地分斷脆性材料基板之分斷裝置。
Claims (4)
- 一種分斷裝置,其係分斷預先以格子狀形成有劃線之脆性材料基板者,且具備:平台,其保持上述脆性材料基板;轉動機構,其使上述平台至少旋轉180°;平行移動機構,其使上述平台沿著其面平行移動;升降機構,其使分斷條相對於上述平台上之脆性材料基板之劃線升降;及控制機構,其以如下方式進行控制:藉由上述轉動機構使上述平台旋轉,且藉由上述平行移動機構使上述平台水平移動,而使分斷條與劃線一致,進而使分斷條下降。
- 如請求項1之分斷裝置,上述分斷裝置具備:相機,其監視被保持於上述平台上之脆性材料基板之劃線,且上述控制機構係基於自上述相機獲得之脆性材料基板之圖像,藉由上述轉動機構使平台旋轉以使劃線與分斷條成為平行者。
- 如請求項1或2之分斷裝置,上述轉動機構具有:基環,其將上述平台旋轉自由地保持;驅動單元,其具有驅動齒輪,且使上述平台旋轉;及齒輪,其設置於上述基環,至少形成有180°之齒且與上述驅動單元之驅動齒輪嚙合。
- 如請求項1或2之分斷裝置,其中:上述轉動機構包含:驅動單元,其具有驅動齒輪,且使上述平台旋轉;基台,其保持貫通孔及上述驅動單元;圓形之交叉滾柱軸承,其外環安裝於上述基台之貫通孔,且將內環設為自由旋轉;基環,其安裝於上述交叉滾柱軸承之內環;齒輪,其設置於上述基環之外周,至少形成有180°之齒,且與上述驅動單元之驅動齒輪嚙合;平台,其被保持於上述基環;及環壓制單元,其設置於上述基環之平台之外周部,且藉由轉動自由之臂而保持具有上述脆性材料基板之切割環。
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TW201302638A (zh) * | 2011-05-31 | 2013-01-16 | Mitsuboshi Diamond Ind Co Ltd | 劃線方法、鑽石尖、劃線裝置 |
TW201536497A (zh) * | 2014-03-28 | 2015-10-01 | Mitsuboshi Diamond Ind Co Ltd | 樹脂片材之分斷方法及分斷裝置 |
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US4227348A (en) * | 1978-12-26 | 1980-10-14 | Rca Corporation | Method of slicing a wafer |
JP3042604B2 (ja) * | 1997-02-04 | 2000-05-15 | サンケン電気株式会社 | 半導体ウエハ組立体切断法及び半導体ウエハ用ワイヤソー切断機 |
KR20050054310A (ko) * | 2003-12-04 | 2005-06-10 | 엘지.필립스 엘시디 주식회사 | 액정표시패널의 컷팅 방법 |
US20090050610A1 (en) * | 2004-10-13 | 2009-02-26 | Mitsuboshi Diamond Industrial Co., Ltd. | Method and apparatus for scribing brittle material board and system for breaking brittle material board |
DE102005028112A1 (de) * | 2005-06-13 | 2006-12-21 | Schmid Technology Systems Gmbh | Verfahren zur Positionierung und Lageerhaltung von Substraten, insbesondere von dünnen Siliziumwafern nach dem Drahtsägen zu deren Vereinzelung |
DE102006032432B3 (de) * | 2006-07-13 | 2007-09-27 | Siltronic Ag | Sägeleiste sowie Verfahren zum gleichzeitigen Abtrennen einer Vielzahl von Scheiben von einem zylindrischen Werkstück unter Verwendung der Sägeleiste |
JP2013112534A (ja) * | 2011-11-25 | 2013-06-10 | Mitsuboshi Diamond Industrial Co Ltd | 脆性材料基板の分断方法 |
JP6039363B2 (ja) | 2012-10-26 | 2016-12-07 | 三星ダイヤモンド工業株式会社 | 脆性材料基板の分断方法並びに分断装置 |
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- 2016-08-05 TW TW105125054A patent/TWI665070B/zh not_active IP Right Cessation
- 2016-08-10 KR KR1020160101556A patent/KR101892051B1/ko active IP Right Grant
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Patent Citations (4)
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US20020179079A1 (en) * | 2001-05-30 | 2002-12-05 | Kazuma Sekiya | Cutting machine |
US7666069B2 (en) * | 2003-12-23 | 2010-02-23 | Samsung Electronics Co., Ltd. | Wafer holder and wafer conveyor equipped with the same |
TW201302638A (zh) * | 2011-05-31 | 2013-01-16 | Mitsuboshi Diamond Ind Co Ltd | 劃線方法、鑽石尖、劃線裝置 |
TW201536497A (zh) * | 2014-03-28 | 2015-10-01 | Mitsuboshi Diamond Ind Co Ltd | 樹脂片材之分斷方法及分斷裝置 |
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KR101892051B1 (ko) | 2018-08-28 |
CN106994752B (zh) | 2019-03-12 |
JP6699196B2 (ja) | 2020-05-27 |
JP2017128082A (ja) | 2017-07-27 |
CN106994752A (zh) | 2017-08-01 |
KR20170088270A (ko) | 2017-08-01 |
TW201726340A (zh) | 2017-08-01 |
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