TWI616552B - 製程工具防護板及具有防護板之物理氣相沉積室 - Google Patents
製程工具防護板及具有防護板之物理氣相沉積室 Download PDFInfo
- Publication number
- TWI616552B TWI616552B TW102114051A TW102114051A TWI616552B TW I616552 B TWI616552 B TW I616552B TW 102114051 A TW102114051 A TW 102114051A TW 102114051 A TW102114051 A TW 102114051A TW I616552 B TWI616552 B TW I616552B
- Authority
- TW
- Taiwan
- Prior art keywords
- process tool
- etch stop
- tool shield
- shield
- coating
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 165
- 238000005240 physical vapour deposition Methods 0.000 title claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 103
- 239000011248 coating agent Substances 0.000 claims abstract description 68
- 238000000576 coating method Methods 0.000 claims abstract description 68
- 238000000151 deposition Methods 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims description 70
- 229910052782 aluminium Inorganic materials 0.000 claims description 47
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 47
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 238000005137 deposition process Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- 239000011247 coating layer Substances 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 23
- 229910001220 stainless steel Inorganic materials 0.000 description 9
- 239000010935 stainless steel Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 238000004873 anchoring Methods 0.000 description 6
- 239000013529 heat transfer fluid Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000007750 plasma spraying Methods 0.000 description 2
- 208000000659 Autoimmune lymphoproliferative syndrome Diseases 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 229940082150 encore Drugs 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261637606P | 2012-04-24 | 2012-04-24 | |
| US61/637,606 | 2012-04-24 | ||
| US13/860,578 US20130277203A1 (en) | 2012-04-24 | 2013-04-11 | Process kit shield and physical vapor deposition chamber having same |
| US13/860,578 | 2013-04-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201346055A TW201346055A (zh) | 2013-11-16 |
| TWI616552B true TWI616552B (zh) | 2018-03-01 |
Family
ID=49379103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102114051A TWI616552B (zh) | 2012-04-24 | 2013-04-19 | 製程工具防護板及具有防護板之物理氣相沉積室 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20130277203A1 (enExample) |
| JP (1) | JP6238963B2 (enExample) |
| KR (2) | KR20150013594A (enExample) |
| CN (1) | CN104246004B (enExample) |
| TW (1) | TWI616552B (enExample) |
| WO (1) | WO2013162992A1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130136864A1 (en) * | 2011-11-28 | 2013-05-30 | United Technologies Corporation | Passive termperature control of hpc rotor coating |
| WO2013094200A1 (ja) * | 2011-12-22 | 2013-06-27 | キヤノンアネルバ株式会社 | 基板処理装置 |
| CN105097401B (zh) * | 2014-05-13 | 2017-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种反应腔室及半导体加工设备 |
| CN105779932B (zh) * | 2014-12-26 | 2018-08-24 | 北京北方华创微电子装备有限公司 | 用于处理腔室的工艺内衬和物理气相沉积设备 |
| US10546733B2 (en) | 2014-12-31 | 2020-01-28 | Applied Materials, Inc. | One-piece process kit shield |
| WO2016157771A1 (ja) * | 2015-03-31 | 2016-10-06 | 株式会社アルバック | カソードアッセンブリ |
| US10103012B2 (en) | 2015-09-11 | 2018-10-16 | Applied Materials, Inc. | One-piece process kit shield for reducing the impact of an electric field near the substrate |
| US9953812B2 (en) | 2015-10-06 | 2018-04-24 | Applied Materials, Inc. | Integrated process kit for a substrate processing chamber |
| KR20180077291A (ko) * | 2015-11-24 | 2018-07-06 | 어플라이드 머티어리얼스, 인코포레이티드 | Vhf-rf pvd 챔버들에서 사용하기 위한 프리-코팅된 실드 |
| CN114551206A (zh) * | 2015-12-04 | 2022-05-27 | 应用材料公司 | 用以防止hdp-cvd腔室电弧放电的先进涂层方法及材料 |
| US11017984B2 (en) * | 2016-04-28 | 2021-05-25 | Applied Materials, Inc. | Ceramic coated quartz lid for processing chamber |
| US9773665B1 (en) * | 2016-12-06 | 2017-09-26 | Applied Materials, Inc. | Particle reduction in a physical vapor deposition chamber |
| US10998172B2 (en) * | 2017-09-22 | 2021-05-04 | Applied Materials, Inc. | Substrate processing chamber having improved process volume sealing |
| JP7001448B2 (ja) * | 2017-12-05 | 2022-01-19 | 東京エレクトロン株式会社 | Ｐｖｄ処理方法およびｐｖｄ処理装置 |
| CN111602235B (zh) * | 2018-01-29 | 2025-03-14 | 应用材料公司 | 用于在pvd处理中减少颗粒的处理配件几何形状 |
| US10818839B2 (en) | 2018-03-15 | 2020-10-27 | Samsung Electronics Co., Ltd. | Apparatus for and method of fabricating semiconductor devices |
| US11584985B2 (en) * | 2018-08-13 | 2023-02-21 | Honeywell International Inc. | Sputter trap having a thin high purity coating layer and method of making the same |
| CN113412341B (zh) * | 2019-02-11 | 2024-11-01 | 应用材料公司 | 在脉冲式pvd中通过等离子体改性从晶片移除颗粒的方法 |
| US11289312B2 (en) | 2019-06-12 | 2022-03-29 | Applied Materials, Inc. | Physical vapor deposition (PVD) chamber with in situ chamber cleaning capability |
| KR102755075B1 (ko) * | 2019-11-15 | 2025-01-14 | 캐논 톡키 가부시키가이샤 | 성막장치 |
| KR102755070B1 (ko) * | 2019-11-20 | 2025-01-14 | 캐논 톡키 가부시키가이샤 | 성막장치 |
| CN114107931B (zh) * | 2021-11-19 | 2023-10-13 | 北京北方华创微电子装备有限公司 | 半导体腔室 |
| US12195843B2 (en) * | 2023-01-19 | 2025-01-14 | Applied Materials, Inc. | Multicathode PVD system for high aspect ratio barrier seed deposition |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020090464A1 (en) * | 2000-11-28 | 2002-07-11 | Mingwei Jiang | Sputter chamber shield |
| US20110278165A1 (en) * | 2010-05-14 | 2011-11-17 | Applied Materials, Inc. | Process kit shield for improved particle reduction |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5419029A (en) * | 1994-02-18 | 1995-05-30 | Applied Materials, Inc. | Temperature clamping method for anti-contamination and collimating devices for thin film processes |
| US6613442B2 (en) * | 2000-12-29 | 2003-09-02 | Lam Research Corporation | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof |
| KR100427842B1 (ko) * | 2001-09-21 | 2004-04-30 | 장건 | 진공증착박막코팅챔버용 실드 및 그 제조방법 |
| US7026009B2 (en) * | 2002-03-27 | 2006-04-11 | Applied Materials, Inc. | Evaluation of chamber components having textured coatings |
| US20050205415A1 (en) * | 2004-03-19 | 2005-09-22 | Belousov Igor V | Multi-component deposition |
| US7618769B2 (en) * | 2004-06-07 | 2009-11-17 | Applied Materials, Inc. | Textured chamber surface |
| JP4623055B2 (ja) * | 2007-05-23 | 2011-02-02 | 日本テキサス・インスツルメンツ株式会社 | メタル成膜装置におけるメタル膜剥離防止構造及び当該構造を用いる半導体装置の製造方法 |
| KR101571558B1 (ko) * | 2008-04-16 | 2015-11-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 프로세싱 증착 차폐 컴포넌트들 |
| US20100055298A1 (en) * | 2008-08-28 | 2010-03-04 | Applied Materials, Inc. | Process kit shields and methods of use thereof |
| KR20120021642A (ko) * | 2010-08-11 | 2012-03-09 | 주식회사 에스에프에이 | 스퍼터 장치 |
-
2013
- 2013-04-11 US US13/860,578 patent/US20130277203A1/en not_active Abandoned
- 2013-04-18 JP JP2015509032A patent/JP6238963B2/ja active Active
- 2013-04-18 WO PCT/US2013/037101 patent/WO2013162992A1/en not_active Ceased
- 2013-04-18 KR KR1020147032961A patent/KR20150013594A/ko not_active Ceased
- 2013-04-18 CN CN201380021330.2A patent/CN104246004B/zh active Active
- 2013-04-18 KR KR1020207018767A patent/KR20200079576A/ko not_active Ceased
- 2013-04-19 TW TW102114051A patent/TWI616552B/zh active
-
2016
- 2016-12-14 US US15/378,402 patent/US20170088942A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020090464A1 (en) * | 2000-11-28 | 2002-07-11 | Mingwei Jiang | Sputter chamber shield |
| US20110278165A1 (en) * | 2010-05-14 | 2011-11-17 | Applied Materials, Inc. | Process kit shield for improved particle reduction |
Also Published As
| Publication number | Publication date |
|---|---|
| US20170088942A1 (en) | 2017-03-30 |
| KR20200079576A (ko) | 2020-07-03 |
| US20130277203A1 (en) | 2013-10-24 |
| CN104246004A (zh) | 2014-12-24 |
| JP6238963B2 (ja) | 2017-11-29 |
| JP2015515551A (ja) | 2015-05-28 |
| CN104246004B (zh) | 2017-05-03 |
| TW201346055A (zh) | 2013-11-16 |
| WO2013162992A1 (en) | 2013-10-31 |
| KR20150013594A (ko) | 2015-02-05 |
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