JP6238963B2 - プロセスキットシールドおよびプロセスキットシールドを有する物理的気相堆積チャンバ - Google Patents

プロセスキットシールドおよびプロセスキットシールドを有する物理的気相堆積チャンバ Download PDF

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JP6238963B2
JP6238963B2 JP2015509032A JP2015509032A JP6238963B2 JP 6238963 B2 JP6238963 B2 JP 6238963B2 JP 2015509032 A JP2015509032 A JP 2015509032A JP 2015509032 A JP2015509032 A JP 2015509032A JP 6238963 B2 JP6238963 B2 JP 6238963B2
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kit shield
process kit
etch stop
stop coating
coating
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JP2015515551A5 (enExample
JP2015515551A (ja
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ムハンマド ラシード
ムハンマド ラシード
アドルフ ミラー アレン
アドルフ ミラー アレン
ジアンチー ワン
ジアンチー ワン
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2015509032A 2012-04-24 2013-04-18 プロセスキットシールドおよびプロセスキットシールドを有する物理的気相堆積チャンバ Active JP6238963B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261637606P 2012-04-24 2012-04-24
US61/637,606 2012-04-24
US13/860,578 US20130277203A1 (en) 2012-04-24 2013-04-11 Process kit shield and physical vapor deposition chamber having same
US13/860,578 2013-04-11
PCT/US2013/037101 WO2013162992A1 (en) 2012-04-24 2013-04-18 Process kit shield and physical vapor deposition chamber having same

Publications (3)

Publication Number Publication Date
JP2015515551A JP2015515551A (ja) 2015-05-28
JP2015515551A5 JP2015515551A5 (enExample) 2016-06-09
JP6238963B2 true JP6238963B2 (ja) 2017-11-29

Family

ID=49379103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015509032A Active JP6238963B2 (ja) 2012-04-24 2013-04-18 プロセスキットシールドおよびプロセスキットシールドを有する物理的気相堆積チャンバ

Country Status (6)

Country Link
US (2) US20130277203A1 (enExample)
JP (1) JP6238963B2 (enExample)
KR (2) KR20150013594A (enExample)
CN (1) CN104246004B (enExample)
TW (1) TWI616552B (enExample)
WO (1) WO2013162992A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10818839B2 (en) 2018-03-15 2020-10-27 Samsung Electronics Co., Ltd. Apparatus for and method of fabricating semiconductor devices

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US20130136864A1 (en) * 2011-11-28 2013-05-30 United Technologies Corporation Passive termperature control of hpc rotor coating
WO2013094200A1 (ja) * 2011-12-22 2013-06-27 キヤノンアネルバ株式会社 基板処理装置
CN105097401B (zh) * 2014-05-13 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种反应腔室及半导体加工设备
CN105779932B (zh) * 2014-12-26 2018-08-24 北京北方华创微电子装备有限公司 用于处理腔室的工艺内衬和物理气相沉积设备
US10546733B2 (en) 2014-12-31 2020-01-28 Applied Materials, Inc. One-piece process kit shield
WO2016157771A1 (ja) * 2015-03-31 2016-10-06 株式会社アルバック カソードアッセンブリ
US10103012B2 (en) 2015-09-11 2018-10-16 Applied Materials, Inc. One-piece process kit shield for reducing the impact of an electric field near the substrate
US9953812B2 (en) 2015-10-06 2018-04-24 Applied Materials, Inc. Integrated process kit for a substrate processing chamber
KR20180077291A (ko) * 2015-11-24 2018-07-06 어플라이드 머티어리얼스, 인코포레이티드 Vhf-rf pvd 챔버들에서 사용하기 위한 프리-코팅된 실드
CN114551206A (zh) * 2015-12-04 2022-05-27 应用材料公司 用以防止hdp-cvd腔室电弧放电的先进涂层方法及材料
US11017984B2 (en) * 2016-04-28 2021-05-25 Applied Materials, Inc. Ceramic coated quartz lid for processing chamber
US9773665B1 (en) * 2016-12-06 2017-09-26 Applied Materials, Inc. Particle reduction in a physical vapor deposition chamber
US10998172B2 (en) * 2017-09-22 2021-05-04 Applied Materials, Inc. Substrate processing chamber having improved process volume sealing
JP7001448B2 (ja) * 2017-12-05 2022-01-19 東京エレクトロン株式会社 Ｐｖｄ処理方法およびｐｖｄ処理装置
CN111602235B (zh) * 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
US11584985B2 (en) * 2018-08-13 2023-02-21 Honeywell International Inc. Sputter trap having a thin high purity coating layer and method of making the same
CN113412341B (zh) * 2019-02-11 2024-11-01 应用材料公司 在脉冲式pvd中通过等离子体改性从晶片移除颗粒的方法
US11289312B2 (en) 2019-06-12 2022-03-29 Applied Materials, Inc. Physical vapor deposition (PVD) chamber with in situ chamber cleaning capability
KR102755075B1 (ko) * 2019-11-15 2025-01-14 캐논 톡키 가부시키가이샤 성막장치
KR102755070B1 (ko) * 2019-11-20 2025-01-14 캐논 톡키 가부시키가이샤 성막장치
CN114107931B (zh) * 2021-11-19 2023-10-13 北京北方华创微电子装备有限公司 半导体腔室
US12195843B2 (en) * 2023-01-19 2025-01-14 Applied Materials, Inc. Multicathode PVD system for high aspect ratio barrier seed deposition

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KR101571558B1 (ko) * 2008-04-16 2015-11-24 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 프로세싱 증착 차폐 컴포넌트들
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US9834840B2 (en) * 2010-05-14 2017-12-05 Applied Materials, Inc. Process kit shield for improved particle reduction
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10818839B2 (en) 2018-03-15 2020-10-27 Samsung Electronics Co., Ltd. Apparatus for and method of fabricating semiconductor devices
US11600776B2 (en) 2018-03-15 2023-03-07 Samsung Electronics Co., Ltd. Apparatus for and method of fabricating semiconductor device

Also Published As

Publication number Publication date
US20170088942A1 (en) 2017-03-30
KR20200079576A (ko) 2020-07-03
US20130277203A1 (en) 2013-10-24
CN104246004A (zh) 2014-12-24
TWI616552B (zh) 2018-03-01
JP2015515551A (ja) 2015-05-28
CN104246004B (zh) 2017-05-03
TW201346055A (zh) 2013-11-16
WO2013162992A1 (en) 2013-10-31
KR20150013594A (ko) 2015-02-05

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