TWI607385B - Semiconductor memory card and its manufacturing method - Google Patents

Description

Semiconductor memory card and method of manufacturing same [Related application]

The present application has priority on application based on Japanese Patent Application No. 2015-52664 (filing date: March 16, 2015). This application includes the entire contents of the basic application by reference to the basic application.

Embodiments of the present invention relate to a semiconductor memory card and a method of fabricating the same.

In a semiconductor memory card with a non-volatile semiconductor memory chip built in NAND (reverse) type flash memory, it is suitable for high-capacity, high-speed, and low manufacturing cost. A structure in which a semiconductor memory device having a SiP (System in Package) structure in which a memory chip or a controller chip is sealed is housed in a cartridge. The semiconductor memory device of the SiP structure includes, for example, a wiring board having an external terminal, a memory chip and a controller wafer mounted on a surface of the wiring substrate opposite to the terminal forming surface, and a sealing resin layer. The memory chip and the controller wafer are sealed.

The semiconductor memory device housed in the cartridge is prepared with a plurality of device size semiconductor memory devices by performance such as the memory capacity of the semiconductor memory card or the size of the semiconductor wafer mounted on the wiring substrate. If a cartridge that does not match the size or shape of the semiconductor memory device is used, the semiconductor memory device is shaken or shifted in the cartridge. Therefore, there is a case where a cartridge including a housing portion having a shape conforming to the accommodated semiconductor memory device is prepared. That is, with the semiconductor memory device that is housed A plurality of types of cartridges are prepared in a uniform shape. In order to prepare a plurality of types of cartridges, a forming die corresponding to each cartridge is required. This situation is a cause of an increase in the manufacturing cost or the number of manufacturing steps of the semiconductor memory card.

Embodiments of the present invention provide a semiconductor memory card capable of reducing manufacturing costs or manufacturing steps and a method of manufacturing the same.

In the method of manufacturing a semiconductor memory card according to the embodiment, the first semiconductor memory device or the second semiconductor memory device is housed in a first housing portion provided in the first housing and a second housing portion disposed in the second housing. The first case is sandwiched between the first case and the second case, and the first joint portion provided in the first case is joined to the second joint portion provided in the second case. The first semiconductor memory device includes an external terminal. The second semiconductor memory device includes an external terminal and has an outer shape smaller than that of the first semiconductor memory device. The first case includes an opening for exposing the external terminals of the first and second semiconductor memory devices. The first housing portion has a shape corresponding to the first semiconductor memory device. The first joint portion is provided on the outer peripheral portion of the first case. The second housing portion has a shape corresponding to the first semiconductor memory device. The second joint portion is provided on the outer peripheral portion of the second cartridge. At least one of the first housing portion and the second housing portion further has a support portion for positioning the second semiconductor memory device.

1‧‧‧Semiconductor memory card

10, 10A, 10B, 10C‧‧‧ card box

11, 11A, 11B, 11C‧‧‧ first box

12, 12A, 12B, 12C‧‧‧ second box

13‧‧‧Incision Department

14‧‧‧ openings

15, 17‧‧‧welding

16, 18‧‧‧ Housing Department

19‧‧ ‧ step department

20‧‧‧Protruding

30‧‧‧Semiconductor memory device

301, 301B, 301C‧‧‧1st semiconductor memory device

302, 302B, 302C‧‧‧2nd semiconductor memory device

31‧‧‧External terminals

32‧‧‧Wiring substrate

32a‧‧‧1st

32b‧‧‧2nd

33‧‧‧ memory chip

34‧‧‧ Controller chip

35,38‧‧‧Electrical pads

36, 39‧‧‧metal wire

37, 40‧‧‧ Connection pads

41‧‧‧ sealing resin layer

42‧‧‧ recess

191‧‧‧1st step difference

192‧‧‧2nd order difference

S1‧‧‧1st side

X‧‧‧ Straight line

Y1‧‧‧1st area

Y2‧‧‧2nd area

Z1‧‧‧A region corresponding to the first area Y1

Z2‧‧‧A region corresponding to the second region Y2

1(a) and 1(b) are views showing a semiconductor memory card of an embodiment.

2 is a plan view of a first semiconductor memory device housed in the semiconductor memory card shown in FIG. 1.

3 is a bottom perspective view of the first semiconductor memory device shown in FIG. 2.

4 is a plan view of a second semiconductor memory device housed in the semiconductor memory card shown in FIG. 1.

Figure 5 is a bottom perspective view of the second semiconductor memory device shown in Figure 4.

Figure 6 is a cross-sectional view taken along line A-A of Figures 3 and 5.

Fig. 7 is an exploded plan view showing a first configuration example of the cartridge for the semiconductor memory card shown in Fig. 1.

Fig. 8 is a view showing a state in which the first semiconductor memory device is housed in the first case of the cartridge shown in Fig. 7.

Fig. 9 is a view showing a state in which the second cartridge is joined to the first cartridge shown in Fig. 8.

Fig. 10 is a view showing a state in which the second semiconductor memory device is housed in the first case of the cartridge shown in Fig. 7.

Fig. 11 is a view showing a state in which the second cartridge is joined to the first cartridge shown in Fig. 10.

Fig. 12 is an exploded plan view showing a second configuration example of the cartridge for the semiconductor memory card shown in Fig. 1.

Fig. 13 is a plan view showing the first semiconductor memory device housed in the cartridge shown in Fig. 12;

Fig. 14 is a plan view showing a second semiconductor memory device housed in the cartridge shown in Fig. 12;

Fig. 15 is an exploded plan view showing a third configuration example of the cartridge for the semiconductor memory card shown in Fig. 1.

Fig. 16 is a plan view showing the first semiconductor memory device housed in the cartridge shown in Fig. 15;

Fig. 17 is a plan view showing the second semiconductor memory device housed in the cartridge shown in Fig. 15;

Fig. 18 is a plan view showing a first case for a cartridge of a semiconductor memory card according to another embodiment.

Hereinafter, a method of manufacturing a semiconductor memory card according to an embodiment will be described. In the respective embodiments, the same components are denoted by the same reference numerals, and a part of the description is omitted. Schema is pattern, and there is thickness and The relationship between the plane size and the thickness ratio of each part is different from the actual situation. In the description, the term "upper and lower directions" is used when the terminal surface of the following semiconductor memory card is set to the upper direction, and there is a case where the direction is the same as the direction of the gravity acceleration. .

First, a semiconductor memory card manufactured by the manufacturing method of the embodiment will be described with reference to Figs. 1 to 6 . 1 is a view showing a semiconductor memory card according to an embodiment, wherein FIG. 1(a) is a plan view of a semiconductor memory card, and FIG. 1(b) is a side view of a semiconductor memory card. 1 shown in the view of the semiconductor memory card 1 lines such as SD ^TM specifications of memory cards (SD ^TM card), and includes a pair of upper and lower cartridge 10, and accommodated in the cartridge 10 within the semiconductor memory device 30 (301 , 302).

The cartridge 10 includes a first case 11 as an upper cover and a second case 12 as a lower cover. The cartridge 10 has a structure in which a space serving as a housing portion of the semiconductor memory device 30 is formed when the first cartridge 11 and the second cartridge 12 are overlapped. The semiconductor memory device 30 disposed in the space is housed in the cartridge 10 by, for example, welding the outer peripheral portions of the first case 11 and the second case 12. The cartridge 10 has a notch portion 13 indicating the orientation of the front side or the front and back sides of the semiconductor memory card 1. The first case 11 that covers the upper surface (terminal forming surface) of the semiconductor memory device 30 has an opening portion 14 that exposes the external terminal 31 of the semiconductor memory device 30. The cartridge 10 is formed of, for example, a polycarbonate resin or an insulating resin material such as ABS (Acrylonitrile Butadiene Styrene) resin.

The semiconductor memory device 30 includes a semiconductor device of a SiP structure. However, the semiconductor memory device 30 is not limited to the SiP structure, and a semiconductor package including a memory chip or a controller wafer may be mounted on the wiring substrate. The composition of the semiconductor memory device 30 of the SiP structure will be described in detail below. 2 is a view (top view) obtained by observing the first semiconductor memory device 301 housed in the semiconductor memory card 1 shown in FIG. 1 from the upper surface (terminal forming surface), and FIG. 3 is a perspective view from the lower surface (molding surface). A perspective view (a bottom perspective view) of the first semiconductor memory device 301 is observed. 4 is a second half of the semiconductor memory card 1 shown in FIG. A top view of the conductor memory device 302, and FIG. 5 is a bottom perspective view of the second semiconductor memory device 302 shown in FIG. Figure 6 is a cross-sectional view taken along line A-A of Figures 4 and 5.

The first semiconductor memory device 301 shown in FIGS. 2 and 3 has substantially the same configuration as the second semiconductor memory device 302 shown in FIGS. 4 and 5. However, the second semiconductor memory device 302 has a smaller shape than the first semiconductor memory device 301. Each of the first and second semiconductor memory devices 301 and 302 has a wiring substrate 32 that also serves as a terminal forming substrate and a wafer mounting substrate. The wiring board 32 has a first surface 32a as a terminal forming surface and a second surface 32b as a wafer mounting surface. The wiring board 32 is, for example, a printed wiring board in which a wiring net is provided on the surface of the resin substrate or inside. The external terminal 31 is disposed on the first surface 32a of the wiring board 32. The external terminals 31 are arranged along the first outer side S1 so as to be located in the vicinity of the first outer side S1 of the wiring board 32.

The memory chip 33 is mounted on the second surface 32b of the wiring board 32. 2 to 6 show a configuration in which two memory chips 33 are stacked on the second surface 32b of the wiring board 32. However, the number of loads or the mounting structure of the memory chips 33 is not limited thereto. The number of the memory chips 33 to be loaded may be one or three or more, and may be appropriately set depending on the memory capacity of the memory chip 33 or the capacity of the semiconductor memory card 1. As the memory chip 33, a semiconductor memory wafer such as a NAND type flash memory can be used. A controller wafer 34 is laminated on the memory chip 33. The controller chip 34 selects a wafer from which data is written or read from a plurality of memory chips 33, and writes the data to the selected memory chip 33 and stores it in the selected memory chip 33. Reading of the data, etc.

In FIGS. 2 to 6, the two memory chips 33 have the same shape in a rectangular shape and each have an electrode pad 35. The two memory chips 33 are stacked in a stepped manner so as to expose the electrode pads 35. The electrode pads 35 of the two memory chips 33 are sequentially connected via the metal wires 36, and are electrically connected to the connection pads 37 of the wiring substrate 32 via the metal wires 36. The controller wafer 34 has electrode pads 38. The electrode pads 38 of the controller wafer 34 are electrically connected to the connection pads 40 of the wiring substrate 32 via the metal wires 39.

A sealing resin layer 41 using a thermosetting resin such as an epoxy resin is formed on the second surface 32b of the wiring substrate 32 on which the memory wafer 33 or the controller wafer 34 is mounted. The sealing resin layer 41 is formed, for example, by molding a mold. The memory chip 33 or the controller wafer 34 is integrally sealed with the sealing resin layer 41 together with the metal wires 36, 39 and the like. The semiconductor memory device 30 (301, 302) of the SiP structure is constructed by these. As described above, the semiconductor memory card 1 is constructed by accommodating the SiP structure semiconductor memory device 30 (301, 302) in the cartridge 10.

Next, the manufacturing steps of the above-described semiconductor memory card 1 will be described. First, a manufacturing procedure of the semiconductor memory card 1 using the first configuration example of the cartridge 10 will be described with reference to Figs. 7 to 11 . Fig. 7 is an exploded plan view showing the cartridge 10A of the first configuration example. The cartridge 10A shown in Fig. 7 is for housing the first semiconductor memory device 301 shown in Figs. 2 and 3 or the second semiconductor memory device 302 shown in Figs. 4 and 5. The cartridge 10A includes a pair of upper and lower cartridges 11A, 12A. The first case 11A has an opening portion 14 that exposes the external terminal 31.

The first welded portion 15 is provided as the first joined portion at the outer peripheral portion of the first case 11A. A first housing portion 16 that houses the semiconductor memory device 30 (301, 302) is provided inside the first welding portion 15. Similarly, the second welded portion 17 is provided as the second joined portion at the outer peripheral portion of the second case 12A. A second housing portion 18 that houses the semiconductor memory device 30 is provided inside the second welding portion 17. The overall shape of the first and second housing portions 16 and 18 corresponds to the first semiconductor memory device 301, respectively. In other words, each of the first and second housing portions 16 and 18 has a concave shape corresponding to the first semiconductor memory device 301. The first semiconductor memory device 301 disposed in the accommodating portions 16 and 18 is positioned by the inner wall surface of the accommodating portions 16 and 18 having the concave shape.

In the first and second accommodating portions 16 and 18, a step portion 19 is further provided, and when the second semiconductor memory device 302 having a shape smaller than that of the first semiconductor memory device 301 is housed, the second semiconductor memory device 302 is provided. Positioning support. In other words, the two side faces of the first and second housing portions 16 and 18 are provided such that the shape thereof is a stepped shape toward the inner side. There is a step portion 19. The first and second accommodating portions 16 and 18 are defined by a straight line X defined by the step portion 19 provided on both side faces, and have a first region (a region including the opening portion 14) Y1 which is higher than the straight line X. And the second region Y2 below the straight line X. The first region Y1 corresponds to the shape of the second semiconductor memory device 302.

When the first semiconductor memory device 301 is housed in the cartridge 10A and the semiconductor memory card 1 is produced, first, as shown in FIG. 8, the first semiconductor memory device 301 is placed in the first housing portion 16 of the first cartridge 11. . Both side faces of the first semiconductor memory device 301 have a stepped shape so as to correspond to the first housing portion 16. The first semiconductor memory device 301 has a portion in which a step is provided as a boundary, and has a region Z1 corresponding to the first region Y1 of the accommodating portions 16 and 18 and a region Z2 corresponding to the second region Y2 of the accommodating portions 16 and 18. . The region Z1 of the first semiconductor memory device 301 has the same shape as the second semiconductor memory device 302. The region Z2 of the first semiconductor memory device 301 has a shape in which the lateral width is smaller than the region Z1, so that the first semiconductor memory device 301 can be positioned to the accommodating portions 16, 18 after the second semiconductor memory device 302 is positioned by the step portion 19. Internal configuration.

Then, as shown in FIG. 9, the second case 72A is placed on the first case 11A in which the first semiconductor memory device 301 is housed. In other words, the first semiconductor memory device 301 is sandwiched between the first case 11A and the second case 12A while being housed in the accommodating portions 16 and 18. Thereafter, the welded portions 15 and 17 of the first and second cases 11A and 12A are melted by applying, for example, ultrasonic vibration, and the portions are hardened to integrally fix the welded portions 15 and 17. In this manner, the first semiconductor memory device 301 is housed in the cartridge 10A, and the semiconductor memory card 1 including the first semiconductor memory device 301 is produced.

Since the first semiconductor memory device 301 is positioned by the inner wall surface of the accommodating portions 16 and 18 in one of the outer shape sides, it is possible to suppress the occurrence of rattling or shifting of the first semiconductor memory device 301 in the semiconductor memory card 1. When the first semiconductor memory device 301 is positioned by the inner wall surface of the accommodating portions 16 and 18, it is preferable to perform positioning based on the shape of the first semiconductor memory device 301 other than the blade processing. The semiconductor memory device 301 is tied to, for example, a multi-piece set The memory wafer 33 or the controller wafer 34 is mounted on each of the device forming regions of the substrate, and the device forming regions are resin-sealed once, and then the resin sealing body is cut in accordance with each device forming region.

The cutting step of the resin sealing body has the steps of: processing the resin sealing body blade into a rectangular shape similar to the outer shape of the semiconductor memory device 301; and performing laser processing on the blade-shaped cutting body corresponding to the shape of the semiconductor memory device 301 machining. The semiconductor memory device 301 manufactured through the above-described cutting step has an outer edge formed by a blade and a laser-shaped outer edge. The tolerance of the size of the device based on the edge of the blade is about ±60 μm. On the other hand, the tolerance of the device based on the laser-shaped outer edge is about ±100 μm. Therefore, it is possible to more effectively suppress the occurrence of shaking of the first semiconductor memory device 301 in the semiconductor memory card 1 by positioning the edge of the first semiconductor memory device 301 other than the blade edge by the inner wall surfaces of the housing portions 16 and 18. Or offset, etc.

When the semiconductor memory card 1 is produced by accommodating the second semiconductor memory device 302 in the cartridge 10A, first, as shown in FIG. 10, the second semiconductor memory device is placed in the first housing portion 16 of the first cartridge 11. 302. The second semiconductor memory device 302 has a shape corresponding to the first region Y1 of the accommodating portions 16 and 18. Therefore, the second semiconductor memory device 302 housed in the first case 11 is positioned by the step portion 19 in the housing portions 16 and 18. Then, as shown in FIG. 11, the second case 12A is placed on the first case 11A in which the second semiconductor memory device 302 is housed. Thereafter, the welded portions 15 and 17 of the first and second cases 11A and 12A are melted and further cured by, for example, additional ultrasonic vibration, whereby the welded portions 15 and 17 are integrally fixed.

The semiconductor memory card 1 including the second semiconductor memory device 302 is produced by accommodating the second semiconductor memory device 302 in the cartridge 10A. Since the second semiconductor memory device 302 is positioned by the inner wall surface of the accommodating portions 16 and 18 and the step portion 19, part of the outer shape of the semiconductor memory device 302 can suppress the sway or shift of the second semiconductor memory device 302 in the semiconductor memory card 1. Wait. The second semiconductor memory device 301 is preferably the same as the first semiconductor memory device 301. Positioning based on the edge of the blade. In this manner, the second semiconductor memory device 302 having a shape smaller than that of the cartridge 10 can be favorably housed in the cartridge 10 common to the first semiconductor memory device 301. Therefore, it is possible to suppress not only the occurrence of shaking or shifting of the semiconductor memory device 30 but also the manufacturing cost or the number of manufacturing steps of the semiconductor memory card 1.

Next, a manufacturing procedure of the semiconductor memory card 1 using the second configuration example of the cartridge 10 will be described with reference to Figs. 12 to 14 . Fig. 12 is an exploded plan view showing the cartridge 10B of the second configuration example. The cartridge 10B shown in Fig. 12 is for housing the first semiconductor memory device 301B shown in Fig. 13 or the second semiconductor memory device 302B shown in Fig. 14. The cartridge 10B has a step portion 19 provided on one of the side faces of the housing portions 16 and 18 of the cartridges 11B and 12B. The step portion 19 supporting the second semiconductor memory device 302B may be provided on the side of only one of the housing portions 16, 18. Even in such a step portion 19, the second semiconductor memory device 302B in the semiconductor memory card 1 can be prevented from being shaken, shifted, or the like.

Next, a manufacturing procedure of the semiconductor memory card 1 using the third configuration example of the cartridge 10 will be described with reference to Figs. 15 to 17 . Fig. 15 is an exploded plan view showing the cartridge 10C of the third configuration example. The cartridge 10C shown in Fig. 15 is for housing the first semiconductor memory device 301C shown in Fig. 16 or the second semiconductor memory device 302C shown in Fig. 17. The first and second cases 11C and 12C constituting the cartridge 10C have projections 20 projecting from both side faces of the accommodating portions 16 and 18 as support portions for positioning the second semiconductor memory device 302.

The second semiconductor memory device 302C is positioned by the inner wall surface of the accommodating portions 16 and 18 and the protruding portion 20 by one of the outer shape sides, so that the second semiconductor memory device 302C in the semiconductor memory card 1 can be prevented from being shaken or shifted. On the other hand, the first semiconductor memory device 301C has a concave portion 42 provided on the side surface thereof so as to correspond to the protruding portion 20. When the first semiconductor memory device 301C is housed in the cartridges 11C and 12C, the first semiconductor memory device 301C can be housed in the card common to the second semiconductor memory device 302 by fitting the protruding portion 20 to the concave portion 42. Inside the box 10C. When the protruding portion 20 is used as the supporting portion, the size of the first semiconductor memory device 301C can be made larger than the applied step portion 19.

According to the manufacturing method of the embodiment, the semiconductor memory card 1 can be manufactured by using the first semiconductor memory device 301, the second semiconductor memory device 302 having a shape smaller than that of the first semiconductor memory device 301, and the common cartridge 10. Even in such a case, the semiconductor memory device 30 (301, 302) in the semiconductor memory card 1 can be suppressed from being shaken or shifted. Therefore, the high-quality semiconductor memory card 1 corresponding to the plurality of semiconductor memory devices 30 can be produced at low cost and at a low number of steps. Further, the semiconductor memory device 30 disposed in the cartridge 10 is not limited to two, and may be three or more.

Fig. 18 is a view showing a first cartridge 11 of a cartridge of another embodiment. The housing portion 16 of the cartridge 11 shown in Fig. 18 has a shape corresponding to the first semiconductor memory device. The first accommodating portion 191 supporting the second semiconductor memory device having a shape smaller than that of the first semiconductor memory device and the third semiconductor memory device having a shape smaller than the second semiconductor memory device are provided in the accommodating portion 16. The second step difference portion 192. A cartridge common to three or more semiconductor memory devices 30 can be provided by applying the housing portion 16 in which a plurality of step portions 191 and 192 (or protrusions) are provided.

In addition, the embodiments of the present invention have been described, but the embodiments are presented as examples and are not intended to limit the scope of the invention. The embodiments can be implemented in various other forms, and various omissions, substitutions and changes can be made without departing from the scope of the invention. These embodiments and variations thereof are included in the scope of the invention and the scope of the invention as set forth in the appended claims.

10A‧‧‧卡盒

11A‧‧‧1st box

12A‧‧‧2nd box

14‧‧‧ openings

15, 17‧‧‧welding

16, 18‧‧‧ Housing Department

19‧‧ ‧ step department

X‧‧‧ Straight line

Y1‧‧‧1st area

Y2‧‧‧2nd area

Claims (7)

A method of manufacturing a semiconductor memory card, comprising: storing a first semiconductor memory device or a second semiconductor memory device in a first housing portion provided in a first cartridge and a second housing portion disposed in a second cartridge And sandwiching the first box and the second box; and joining the first joint portion provided in the first box to the second joint portion provided in the second box; the first semiconductor memory The device includes an external terminal; the second semiconductor memory device includes an external terminal and has an outer shape smaller than the first semiconductor memory device, and the first case includes the external terminal for exposing the first and second semiconductor memory devices In the opening, the first housing portion has a shape corresponding to the first semiconductor memory device, and the first bonding portion is provided on an outer peripheral edge portion of the first cartridge, and the second housing portion has a first semiconductor memory device In the corresponding shape, the second joint portion is provided on the outer peripheral edge portion of the second cartridge, and at least one of the first storage portion and the second storage portion has the above-described A support portion for positioning the second semiconductor memory device. The method of manufacturing a semiconductor memory card according to claim 1, wherein each of the first and second semiconductor memory devices includes a wiring board including the external terminal, a memory chip and a controller chip, and the like. And a connection member electrically connecting the wiring substrate to the memory chip and the controller chip; and a sealing resin layer formed on the wiring by sealing the memory chip and the controller wafer On the substrate. A method of manufacturing a semiconductor memory card according to claim 1 or 2, wherein said support member a step portion provided to have a side surface shape of at least one of the first and second housing portions as a stepped shape, wherein the first and second housing portions are defined by the step portion. The first semiconductor memory device includes a first region and a second region, and the first semiconductor memory device has a stepped shape corresponding to the stepped portion, and the second semiconductor memory device has a shape corresponding to the first region. The method of manufacturing a semiconductor memory card according to claim 1 or 2, wherein the support portion has a protruding portion that protrudes from a side surface of at least one of the first and second housing portions, and the first and second housing portions are The protrusion is a boundary and has a first region and a second region including the opening, the first semiconductor memory device has a recess corresponding to the protrusion, and the second semiconductor memory device has a shape corresponding to the first region . The method of manufacturing a semiconductor memory card according to claim 1 or 2, wherein said first and second semiconductor memory devices have a shape other than a blade edge, and said first and second semiconductor memory devices are formed by said outer shape Positioning in the first and second housing portions. A semiconductor memory card comprising: a first cartridge having a first housing portion and a first joint portion; and a second cartridge having a second housing portion and a second joint portion, and the second cartridge The joint portion is joined to the first joint portion; and the first semiconductor memory device or the second semiconductor memory device is housed in a space formed by the first storage portion and the second storage portion; the first cartridge includes At least one of the first accommodating portion and the second accommodating portion has a support portion for positioning the second semiconductor memory device, The first semiconductor memory device includes an external terminal exposed from the opening, and has a shape corresponding to the first housing portion and the second housing portion, and the second semiconductor memory device includes an external terminal exposed from the opening. Further, it has a shape smaller than that of the first semiconductor memory device, and is supported by the support unit. The semiconductor memory card of claim 6, wherein the support portion has a protrusion protruding from a side surface of at least one of the first and second housing portions, and the first and second housing portions are demarcated by the protrusion portion The first semiconductor memory device includes a first region and a second region including the opening, and the first semiconductor memory device has a concave portion corresponding to the protruding portion, and the second semiconductor memory device has a shape corresponding to the first region.