TWI606099B - 圖案處理方法 - Google Patents
圖案處理方法 Download PDFInfo
- Publication number
- TWI606099B TWI606099B TW105117280A TW105117280A TWI606099B TW I606099 B TWI606099 B TW I606099B TW 105117280 A TW105117280 A TW 105117280A TW 105117280 A TW105117280 A TW 105117280A TW I606099 B TWI606099 B TW I606099B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- pattern
- monomer
- block
- processing method
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0384—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
- G03F7/0955—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer one of the photosensitive systems comprising a non-macromolecular photopolymerisable compound having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/165—Monolayers, e.g. Langmuir-Blodgett
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- H10P76/2041—
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Plasma & Fusion (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Graft Or Block Polymers (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562170538P | 2015-06-03 | 2015-06-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201708442A TW201708442A (zh) | 2017-03-01 |
| TWI606099B true TWI606099B (zh) | 2017-11-21 |
Family
ID=57452498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105117280A TWI606099B (zh) | 2015-06-03 | 2016-06-01 | 圖案處理方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9671697B2 (enExample) |
| JP (1) | JP6231163B2 (enExample) |
| KR (3) | KR20160142783A (enExample) |
| CN (1) | CN106249540A (enExample) |
| TW (1) | TWI606099B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016223046A (ja) * | 2015-06-04 | 2016-12-28 | 東京応化工業株式会社 | 表面にパターンを有する繊維の製造方法 |
| JP6877932B2 (ja) * | 2015-09-28 | 2021-05-26 | 東京応化工業株式会社 | レジストパターン形成方法及びシュリンク剤組成物 |
| US10656522B2 (en) * | 2015-11-19 | 2020-05-19 | Az Electronic Materials (Luxembourg) S.A.R.L. | Composition for forming fine resist pattern and pattern forming method using same |
| US10162265B2 (en) * | 2015-12-09 | 2018-12-25 | Rohm And Haas Electronic Materials Llc | Pattern treatment methods |
| WO2018008481A1 (ja) * | 2016-07-07 | 2018-01-11 | Jsr株式会社 | パターン形成用組成物及びパターン形成方法 |
| US9910355B2 (en) * | 2016-07-29 | 2018-03-06 | Rohm And Haas Electronic Materials Llc | Method of negative tone development using a copolymer multilayer electrolyte and articles made therefrom |
| US9910353B2 (en) * | 2016-07-29 | 2018-03-06 | Dow Global Technologies Llc | Method of negative tone development using a copolymer multilayer electrolyte and articles made therefrom |
| US10790251B2 (en) | 2018-06-20 | 2020-09-29 | Micron Technology, Inc. | Methods for enhancing adhesion of three-dimensional structures to substrates |
| US11567408B2 (en) * | 2019-10-15 | 2023-01-31 | Rohm And Haas Electronic Materials Korea Ltd. | Coating composition for use with an overcoated photoresist |
| US11682559B2 (en) | 2020-06-11 | 2023-06-20 | Tokyo Electron Limited | Method to form narrow slot contacts |
| KR20230122862A (ko) | 2022-02-15 | 2023-08-22 | 주식회사 산흥이지 | 빛반사도료 및 엘이디를 이용한 횡단보도안전표시 점멸장치 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4665131A (en) * | 1985-06-14 | 1987-05-12 | Nippon Oil And Fats Company, Ltd. | Block copolymer |
| US5219945A (en) * | 1992-02-20 | 1993-06-15 | E. I. Du Pont De Nemours And Company | ABC triblock methacrylate polymers |
| TW536734B (en) * | 2000-07-31 | 2003-06-11 | Clariant Int Ltd | Process for manufacturing a microelectronic device |
| US20030008968A1 (en) | 2001-07-05 | 2003-01-09 | Yoshiki Sugeta | Method for reducing pattern dimension in photoresist layer |
| US6790908B2 (en) * | 2002-05-09 | 2004-09-14 | Rhodia Inc. | Block copolymer |
| JP3675434B2 (ja) | 2002-10-10 | 2005-07-27 | 東京応化工業株式会社 | 微細パターンの形成方法 |
| KR100585138B1 (ko) * | 2004-04-08 | 2006-05-30 | 삼성전자주식회사 | 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법 |
| JP4859437B2 (ja) * | 2005-10-25 | 2012-01-25 | 大阪有機化学工業株式会社 | 被膜形成用樹脂組成物 |
| US7985534B2 (en) | 2007-05-15 | 2011-07-26 | Fujifilm Corporation | Pattern forming method |
| US7763319B2 (en) * | 2008-01-11 | 2010-07-27 | International Business Machines Corporation | Method of controlling orientation of domains in block copolymer films |
| US7745077B2 (en) | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
| US20100183851A1 (en) | 2009-01-21 | 2010-07-22 | Yi Cao | Photoresist Image-forming Process Using Double Patterning |
| US8821978B2 (en) | 2009-12-18 | 2014-09-02 | International Business Machines Corporation | Methods of directed self-assembly and layered structures formed therefrom |
| JP2014505119A (ja) * | 2010-11-24 | 2014-02-27 | ダウ コーニング コーポレーション | ブロックコポリマーの形態の制御 |
| KR101311446B1 (ko) * | 2011-01-21 | 2013-09-25 | 금호석유화학 주식회사 | 수용성 수지 조성물 및 이를 이용하여 미세패턴을 형성하는 방법 |
| KR20140090595A (ko) * | 2011-09-06 | 2014-07-17 | 코넬 유니버시티 | 블럭 공중합체 및 그것을 사용한 리소그래피 패턴화 |
| JP5793399B2 (ja) | 2011-11-04 | 2015-10-14 | 富士フイルム株式会社 | パターン形成方法及びその方法に用いる架橋層形成用組成物 |
| KR102028109B1 (ko) * | 2011-12-23 | 2019-11-15 | 금호석유화학 주식회사 | 미세패턴 형성용 수용성 수지 조성물 및 이를 이용한 미세패턴의 형성방법 |
| JP5979660B2 (ja) | 2012-02-09 | 2016-08-24 | 東京応化工業株式会社 | コンタクトホールパターンの形成方法 |
| JP5891075B2 (ja) | 2012-03-08 | 2016-03-22 | 東京応化工業株式会社 | ブロックコポリマー含有組成物及びパターンの縮小方法 |
| KR20150036130A (ko) * | 2012-06-29 | 2015-04-07 | 제이에스알 가부시끼가이샤 | 패턴 형성용 조성물 및 패턴 형성 방법 |
| US9606440B2 (en) | 2013-02-25 | 2017-03-28 | The University Of Queensland | Lithographically produced features |
| FR3003257B1 (fr) * | 2013-03-13 | 2015-03-20 | Polymem | Copolymere a blocs amphiphile et son utilisation pour la fabrication de membranes polymeres de filtration |
| KR20140120212A (ko) | 2013-04-02 | 2014-10-13 | 주식회사 동진쎄미켐 | 미세패턴 형성용 코팅 조성물 및 이를 이용한 미세패턴 형성방법 |
| JP6134619B2 (ja) | 2013-09-13 | 2017-05-24 | 富士フイルム株式会社 | パターン形成方法、及び、電子デバイスの製造方法 |
| JP6233240B2 (ja) * | 2013-09-26 | 2017-11-22 | 信越化学工業株式会社 | パターン形成方法 |
| KR102198023B1 (ko) | 2013-10-30 | 2021-01-05 | 삼성전자주식회사 | 반도체 소자의 패턴 형성방법 |
| KR20150101875A (ko) * | 2014-02-27 | 2015-09-04 | 삼성전자주식회사 | 블록 공중합체를 이용한 미세 패턴 형성 방법 |
| JP6459759B2 (ja) | 2014-05-26 | 2019-01-30 | 信越化学工業株式会社 | パターン形成方法及びシュリンク剤 |
| US9448483B2 (en) | 2014-07-31 | 2016-09-20 | Dow Global Technologies Llc | Pattern shrink methods |
-
2016
- 2016-06-01 CN CN201610383259.8A patent/CN106249540A/zh active Pending
- 2016-06-01 TW TW105117280A patent/TWI606099B/zh not_active IP Right Cessation
- 2016-06-02 JP JP2016111345A patent/JP6231163B2/ja not_active Expired - Fee Related
- 2016-06-02 KR KR1020160068686A patent/KR20160142783A/ko not_active Ceased
- 2016-06-03 US US15/172,246 patent/US9671697B2/en not_active Expired - Fee Related
-
2018
- 2018-06-26 KR KR1020180073234A patent/KR101940008B1/ko not_active Expired - Fee Related
- 2018-12-05 KR KR1020180155074A patent/KR101992695B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR101992695B1 (ko) | 2019-06-25 |
| TW201708442A (zh) | 2017-03-01 |
| JP2017010016A (ja) | 2017-01-12 |
| KR20160142783A (ko) | 2016-12-13 |
| CN106249540A (zh) | 2016-12-21 |
| KR101940008B1 (ko) | 2019-04-10 |
| KR20180077125A (ko) | 2018-07-06 |
| JP6231163B2 (ja) | 2017-11-15 |
| US9671697B2 (en) | 2017-06-06 |
| US20160357110A1 (en) | 2016-12-08 |
| KR20180132586A (ko) | 2018-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI606099B (zh) | 圖案處理方法 | |
| TWI617900B (zh) | 圖案處理方法 | |
| TWI588896B (zh) | 圖案收縮方法 | |
| TWI624737B (zh) | 圖案處理方法 | |
| TWI603145B (zh) | 光微影方法 | |
| TWI615460B (zh) | 用於圖案處理的組合物和方法 | |
| TW201816004A (zh) | 圖案處理方法 | |
| TWI627220B (zh) | 用於圖案處理之組合物及方法 | |
| TW201716524A (zh) | 嵌段共聚物及圖案處理組合物以及方法 | |
| TWI655499B (zh) | 使用共聚物多層電解質之負型顯影方法及由其製備之製品 | |
| TWI636321B (zh) | 使用共聚物多層電解質的負型顯影方法及由其製備的製品 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |