TWI603371B - Plasma processing apparatus having control of exhaust flow path size - Google Patents
Plasma processing apparatus having control of exhaust flow path size Download PDFInfo
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- TWI603371B TWI603371B TW106121345A TW106121345A TWI603371B TW I603371 B TWI603371 B TW I603371B TW 106121345 A TW106121345 A TW 106121345A TW 106121345 A TW106121345 A TW 106121345A TW I603371 B TWI603371 B TW I603371B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
- H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid
Description
本發明關於一種調節排氣通路之尺寸之電漿處理裝置。 The present invention relates to a plasma processing apparatus for adjusting the size of an exhaust passage.
如圖1所示，現有的電漿處理裝置包括在內部具有利用電漿處理基板1的空間的腔室2、使工作氣體流入這種腔室2內部的噴頭3、對流入的工作氣體施加高頻電壓以形成電漿的天線4、位於腔室2的內部並放置基板的載盤5、以及連接於腔室2一側以吸入工作氣體的排氣泵6。 As shown in Fig. 1, the conventional plasma processing apparatus includes a chamber 2 having a space for treating the substrate 1 with plasma inside, and a head 3 for allowing a working gas to flow into the inside of the chamber 2, and applying a high working gas to the inside. The frequency voltage is an antenna 4 for forming a plasma, a carrier 5 located inside the chamber 2 and placing the substrate, and an exhaust pump 6 connected to the side of the chamber 2 to draw in a working gas.
腔室2內部形成有排氣通路7，以使工作氣體向排氣泵6方向流動。另一方面，為改善基板1的均勻性(Uniformity)，均勻處理基板1的內側和外側極為重要，為此，需要控制電漿處理裝置的多種工作環境，其一種方法是，通過調節排氣通路7的尺寸來調節電漿停留於腔室2內部的時間，改善基板1的均勻性。 An exhaust passage 7 is formed inside the chamber 2 to flow the working gas in the direction of the exhaust pump 6. On the other hand, in order to improve the uniformity of the substrate 1, it is extremely important to uniformly process the inside and the outside of the substrate 1. For this reason, it is necessary to control various working environments of the plasma processing apparatus, one method of which is to adjust the exhaust passage. The size of 7 adjusts the time during which the plasma stays inside the chamber 2, improving the uniformity of the substrate 1.
習知技術中所使用的方法是，通過改變腔室2的形狀本身來調節排氣通路7的尺寸。 The method used in the prior art is to adjust the size of the exhaust passage 7 by changing the shape itself of the chamber 2.
然而，在這種方法中，排氣通路7的尺寸是固定的，因而所存在的問題是，很難統一適用於利用電漿處理裝置處理的多種基板，需要根據基板更換腔室2。 However, in this method, the size of the exhaust passage 7 is fixed, and thus there is a problem that it is difficult to uniformly apply to various substrates processed by the plasma processing apparatus, and it is necessary to replace the chamber 2 according to the substrate.
此外，由於藉由改變腔室2的形狀來調節排氣通路7的尺寸 所存在的問題是腔室2在基板1的處理過程中容易被副產物污染，且容易因電漿而受損，從而導致腔室2的更換週期變短。 Further, since the size of the exhaust passage 7 is adjusted by changing the shape of the chamber 2 The problem is that the chamber 2 is easily contaminated by by-products during the processing of the substrate 1, and is easily damaged by the plasma, thereby causing the replacement period of the chamber 2 to become short.
上述作為先前技術說明的事項僅用於加深對本發明的背景的理解，不能被理解為相當於本領域的通常知識者所已知的習知技術。 The above description of the prior art is only for the purpose of understanding the background of the present invention and is not to be construed as equivalent to the known skill of ordinary skill in the art.
〔先前技術文獻〕 [Previous Technical Literature]
〔專利文獻〕 [Patent Document]
〔專利文獻1〕KR 10-2014-0140514(2014.12.09) [Patent Document 1] KR 10-2014-0140514 (2014.12.09)
本發明的目的在於，提供一種利用排氣通路調節部調節排氣通路的尺寸，從而無需更換腔室並可適用於多種產品以防止腔室內壁在工作過程中直接受影響之能夠調節排氣通路之尺寸之電漿處理裝置。 It is an object of the present invention to provide an exhaust passage adjusting portion for adjusting the size of an exhaust passage, thereby eliminating the need to replace a chamber and being applicable to various products to prevent the inner wall of the chamber from being directly affected during operation to adjust the exhaust passage. The size of the plasma processing device.
為了實現上述目的，本發明之調節排氣通路之尺寸之電漿處理裝置，其特徵在於，包括：腔室，其包括位於上部的第一腔室和從所述第一腔室向下擴展而形成的第二腔室；載盤，其設置於所述腔室內部，以放置基板；排氣泵，其連接於所述第二腔室一側，以吸入存在於所述腔室內部的工作氣體；排氣通路，其形成於所述腔室與所述載盤之間，以使工作氣體向所述排氣泵方向流動；以及排氣通路調節部，其設置於所述腔室內部，以使所述排氣通路的尺寸能夠變化，在所述第一腔室和第二腔室內部空間升降而調節所述排氣通路的尺寸，所述排氣通路調節部包括：上端位於所述第一腔室內部且形成為中空的圓柱形狀的環形部、在所述環形部 的外周面上向所述環形部的外側方向延伸而形成且位於所述第二腔室內部的延伸部、以及與所述延伸部連接而伸縮的升降部，所述環形部與所述升降部連動而升降來調節所述排氣通路的尺寸，且所述環形部始終位於高於所述載盤的位置。 In order to achieve the above object, a plasma processing apparatus for adjusting the size of an exhaust passage of the present invention includes: a chamber including a first chamber at an upper portion and a downwardly extending from the first chamber a second chamber formed; a carrier disposed inside the chamber to place a substrate; and an exhaust pump coupled to one side of the second chamber for inhaling work existing inside the chamber a gas; an exhaust passage formed between the chamber and the carrier to flow a working gas toward the exhaust pump; and an exhaust passage adjusting portion disposed inside the chamber To adjust the size of the exhaust passage to increase the size of the exhaust passage in the first chamber and the second chamber, the exhaust passage adjusting portion includes: an upper end located at the Inside the first chamber and formed into a hollow cylindrical annular portion at the annular portion An outer peripheral surface of the outer peripheral surface extending toward the outer side of the annular portion and extending inside the second chamber, and a lifting portion connected to the extending portion for expansion and contraction, the annular portion and the lifting portion The size of the exhaust passage is adjusted by moving up and down, and the annular portion is always located higher than the position of the carrier.
其特徵在於，包括：腔室，其包括位於上部的第一腔室和從所述第一腔室向下擴展而形成的第二腔室；載盤，其設置於所述腔室內部，以放置基板；排氣泵，其連接於所述第二腔室一側，以吸入存在於所述腔室內部的工作氣體；排氣通路，其形成於所述腔室與所述載盤之間，以使工作氣體向所述排氣泵方向流動；以及排氣通路調節部，其包括：引導部，該引導部包括上端結合於所述第二腔室上端內壁且內徑向下縮小的中空形狀的第一引導部、和在所述第一引導部下端向下延伸而形成且形成為中空的圓柱形狀的第二引導部；上端位於所述第二引導部內部或外部且形成為中空的圓柱形狀的環形部；在所述環形部外周面上向所述環形部的外側方向延伸而形成且位於所述第二腔室內部的延伸部；以及與所述延伸部連接而伸縮的升降部，所述環形部與所述升降部連動而升降來調節所述排氣通路的尺寸，且所述環形部始終位於高於所述載盤的位置。 The method includes a chamber including a first chamber at an upper portion and a second chamber formed to extend downward from the first chamber, and a carrier disposed inside the chamber to a substrate; an exhaust pump connected to one side of the second chamber to suck in a working gas existing inside the chamber; and an exhaust passage formed between the chamber and the carrier a flow of the working gas toward the exhaust pump; and an exhaust passage adjusting portion including: a guiding portion including an upper end coupled to an inner wall of the upper end of the second chamber and having an inner diameter that is downwardly reduced a first guiding portion having a hollow shape, and a second guiding portion formed to extend downward at a lower end of the first guiding portion and formed into a hollow cylindrical shape; an upper end being located inside or outside the second guiding portion and formed to be hollow a cylindrical-shaped annular portion; an extending portion formed on the outer peripheral surface of the annular portion toward the outer side of the annular portion and located inside the second chamber; and a lifting portion that is connected to the extending portion to expand and contract Portion, the ring portion and the liter The interlocking portion is raised and lowered to adjust the size of the exhaust passage, and said annular portion is always located above the carrier disc.
另外，本發明的特徵在於，所述延伸部為以環形部為中心延伸的中空的圓盤形狀或以環形部為中心延伸的具有長度的板材形狀。 Further, the present invention is characterized in that the extending portion is a hollow disk shape extending around the annular portion or a plate shape having a length extending around the annular portion.
另外，本發明的特徵在於，所述環形部和延伸部包括鋁而構成。 Further, the present invention is characterized in that the annular portion and the extending portion are composed of aluminum.
另外，本發明的特徵在於，所述延伸部從中心沿外側方向形成有孔或狹縫。 Further, the present invention is characterized in that the extending portion is formed with a hole or a slit in the outer direction from the center.
另外，本發明的特徵在於，所述環形部的表面形成有陽極氧化膜或氧化釔膜。 Further, the present invention is characterized in that an anodized film or a ruthenium oxide film is formed on the surface of the annular portion.
根據本發明，可以實現如下多種效果。第一，具有無需改變腔室形狀，可藉由升降排氣通路調節部調節排氣通路的尺寸的優點。第二，在工作過程中排氣通路調節部覆蓋腔室，因而具有在需要時可以更換比腔室價格低廉的排氣通路調節部，從而延長腔室更換週期的優點。 According to the present invention, various effects as follows can be achieved. First, there is an advantage that the size of the exhaust passage can be adjusted by the elevation exhaust passage adjusting portion without changing the shape of the chamber. Second, the exhaust passage adjusting portion covers the chamber during operation, and thus has an advantage that the exhaust passage adjusting portion which is cheaper than the chamber can be replaced when necessary, thereby extending the chamber replacement period.
10‧‧‧基板 10‧‧‧Substrate
20‧‧‧腔室 20‧‧‧ chamber
22‧‧‧第一腔室 22‧‧‧ first chamber
24‧‧‧第二腔室 24‧‧‧Second chamber
30‧‧‧載盤 30‧‧‧Package
40‧‧‧排氣泵 40‧‧‧Exhaust pump
50‧‧‧排氣通路 50‧‧‧Exhaust passage
60‧‧‧排氣通路調節部 60‧‧‧Exhaust passage adjustment department
61‧‧‧環形部 61‧‧‧Rings
62‧‧‧延伸部 62‧‧‧Extension
63‧‧‧升降部 63‧‧‧ Lifting Department
64‧‧‧引導部 64‧‧‧Guidance Department
64a‧‧‧第一引導部 64a‧‧‧First Guide
64b‧‧‧第二引導部 64b‧‧‧Second Guide
M‧‧‧動力部 M‧‧‧Power Department
H‧‧‧貫通部 H‧‧‧through department
圖1是現有的電漿處理裝置的結構圖。 Fig. 1 is a configuration diagram of a conventional plasma processing apparatus.
圖2是本發明之調節排氣通路之尺寸之電漿處理裝置的結構圖。 Fig. 2 is a structural view showing a plasma processing apparatus for adjusting the size of an exhaust passage of the present invention.
圖3是本發明之調節排氣通路之尺寸之電漿處理裝置的另一實施例的結構圖。 Fig. 3 is a structural view showing another embodiment of the plasma processing apparatus for adjusting the size of the exhaust passage of the present invention.
圖4(a)、4(b)是作為本發明之調節排氣通路之尺寸之電漿處理裝置的一主要部分的排氣通路調節部的結構圖。 4(a) and 4(b) are configuration diagrams of an exhaust passage adjusting portion which is a main portion of a plasma processing apparatus for adjusting the size of an exhaust passage of the present invention.
圖5是本發明之調節排氣通路之尺寸之電漿處理裝置的另一實施例的結構圖。 Fig. 5 is a structural view showing another embodiment of the plasma processing apparatus for adjusting the size of the exhaust passage of the present invention.
圖6的(a)是作為本發明之調節排氣通路之尺寸之電漿處理裝置的一主要部分的排氣通路調節部的平面圖。 Fig. 6 (a) is a plan view showing an exhaust passage adjusting portion which is a main portion of the plasma processing apparatus for adjusting the size of the exhaust passage of the present invention.
圖6的(b)是作為本發明之調節排氣通路之尺寸之電漿處理裝置的一主要部分的排氣通路調節部的另一實施例的平面圖。 Fig. 6 (b) is a plan view showing another embodiment of the exhaust passage adjusting portion which is a main portion of the plasma processing apparatus for adjusting the size of the exhaust passage of the present invention.
圖7(a)、7(b)是作為本發明之調節排氣通路之尺寸之電漿處理裝置 的一主要部分的排氣通路調節部的另一實施例的平面圖。 7(a) and 7(b) are plasma processing apparatuses which are sizes of the exhaust passage of the present invention. A plan view of another embodiment of a main portion of the exhaust passage adjusting portion.
圖8是示出作為本發明之調節排氣通路之尺寸之電漿處理裝置的一主要部分的排氣通路調節部的另一實施例的平面圖的圖。 Fig. 8 is a plan view showing another embodiment of an exhaust passage adjusting portion which is a main portion of the plasma processing apparatus for adjusting the size of the exhaust passage of the present invention.
本發明的目的、特定優點及新特徵將在下面結合圖式描述的詳細說明和實施例中變得更容易理解。值得注意的是，在本說明書中對各圖的構成要素標記參考符號時，就相同的構成要素而言，即使在不同的圖中標示，也儘量使其具有相同的編號。此外，儘管第一、第二等用語可以用於說明多種構成要素，但所述構成要素不限於所述用語。所述用語僅用於區分一個構成要素與另一個構成要素的目的。此外，在說明本發明的過程中，當判斷對相關習知技術的具體說明反而多餘地使本發明的主旨不清楚時，省略其詳細說明。 The objects, the specific advantages and the novel features of the present invention will become more <RTIgt; It is to be noted that, in the present specification, when the reference numerals are attached to the constituent elements of the respective drawings, the same constituent elements are denoted by the same reference numerals as much as possible even if they are indicated in different drawings. Further, although the terms first, second, etc. may be used to describe various constituent elements, the constituent elements are not limited to the terms. The terms are only used to distinguish one component from another. Further, in the course of explaining the present invention, when it is judged that the detailed description of the related art is omitted, the detailed description of the present invention is omitted.
〔第1實施方式〕 [First Embodiment]
如圖2所示，本發明的調節排氣通路之尺寸之電漿處理裝置包括：腔室20、載盤30、排氣泵40、排氣通路50以及排氣通路調節部60。 As shown in FIG. 2, the plasma processing apparatus for adjusting the size of the exhaust passage of the present invention includes a chamber 20, a carrier 30, an exhaust pump 40, an exhaust passage 50, and an exhaust passage adjusting portion 60.
腔室20在內部具有利用電漿處理基板10的空間，在位於這種腔室20的內部空間的載盤30上放置基板10。 The chamber 20 has a space inside the substrate 10 by plasma treatment, and the substrate 10 is placed on the carrier 30 located in the internal space of such a chamber 20.
排氣泵40位於腔室20的外部，且與腔室20連接以吸入腔室20內部工作氣體。 The exhaust pump 40 is located outside the chamber 20 and is connected to the chamber 20 to draw in the working gas inside the chamber 20.
此外，在腔室20內部空間存在工作氣體，腔室20內壁與載盤30之間形成有排氣通路50，排氣泵40與腔室20連接，且與排氣通路50連通。 Further, a working gas is present in the internal space of the chamber 20, and an exhaust passage 50 is formed between the inner wall of the chamber 20 and the carrier 30. The exhaust pump 40 is connected to the chamber 20 and communicates with the exhaust passage 50.
這種排氣通路50由排氣通路調節部60調節尺寸。排氣通路調節部60包括：環形部61、延伸部62、升降部63。 This exhaust passage 50 is sized by the exhaust passage adjusting portion 60. The exhaust passage adjusting portion 60 includes an annular portion 61, an extending portion 62, and a lifting portion 63.
環形部61呈內部形成為中空的圓柱形狀，其位於載盤30的上部。 The annular portion 61 is formed in a hollow cylindrical shape inside, and is located at an upper portion of the carrier 30.
延伸部62以環形部61為中心在環形部61的一側延伸，也可以在環形部61下端向環形部61的外側方向延伸而形成。延伸部62與升降部63連接，以使環形部61和延伸部62升降。 The extending portion 62 extends on one side of the annular portion 61 around the annular portion 61, and may be formed to extend toward the outer side of the annular portion 61 at the lower end of the annular portion 61. The extension portion 62 is coupled to the elevation portion 63 to raise and lower the annular portion 61 and the extension portion 62.
升降部63的一端與延伸部62的另一端連接，其另一端與腔室外部的缸體、直線電機等多種動力源M連接。 One end of the lifting portion 63 is connected to the other end of the extending portion 62, and the other end thereof is connected to a plurality of power sources M such as a cylinder block or a linear motor outside the chamber.
升降部63的一端靠這種動力源M上升和下降，因此與其連接的延伸部62也隨之上升和下降，其結果是，環形部61上升和下降。 One end of the elevating portion 63 is raised and lowered by such a power source M, so that the extending portion 62 connected thereto also rises and falls, and as a result, the annular portion 61 ascends and descends.
環形部61與升降部63連動而上升和下降，以調節排氣通路50的尺寸。 The annular portion 61 moves up and down in conjunction with the lifting portion 63 to adjust the size of the exhaust passage 50.
腔室20包括形成於上部的第一腔室22和從這種第一腔室22向下擴展形成的第二腔室24，環形部61的上端位於第一腔室22的內部，延伸部62向環形部61的外側方向延伸而形成，位於第二腔室24內部，環形部61和延伸部62隨著升降部63工作而升降。 The chamber 20 includes a first chamber 22 formed at an upper portion and a second chamber 24 formed downwardly from the first chamber 22, the upper end of the annular portion 61 being located inside the first chamber 22, the extension portion 62 It is formed to extend in the outer direction of the annular portion 61, and is located inside the second chamber 24, and the annular portion 61 and the extending portion 62 are raised and lowered as the lifting portion 63 operates.
此時，第一腔室22與環形部61之間可以接觸，但為了環形部61的升降，較佳為彼此隔開。 At this time, the first chamber 22 and the annular portion 61 may be in contact with each other, but for the elevation of the annular portion 61, it is preferably spaced apart from each other.
通常，當排氣泵40工作時，工作氣體通過形成於載盤30與第二腔室24的頂棚內壁之間的排氣通路50流動，而在本發明中，利用環形部61和延伸部62將排氣通路50規定為載盤30與延伸部62之間的區域， 且可隨著環形部61和延伸部62的升降調節排氣通路50的尺寸。 Generally, when the exhaust pump 40 is operated, the working gas flows through the exhaust passage 50 formed between the carrier 30 and the inner wall of the ceiling of the second chamber 24, and in the present invention, the annular portion 61 and the extension portion are utilized. 62 defines the exhaust passage 50 as an area between the carrier 30 and the extension 62, The size of the exhaust passage 50 can be adjusted as the annular portion 61 and the extended portion 62 are lifted and lowered.
因此，當環形部61和延伸部62下降時，排氣通路50的尺寸會減少，排氣通路50的尺寸所減少的量是環形部61下降後位於第二腔室24區域的長度的量，工作氣體會通過形成於載盤30與延伸部62之間的排氣通路50流動。當環形部61和延伸部62上升時，排氣通路50按照與上述原理相反的原理增加，根據基板10的尺寸，無需改變腔室20的形狀即可調節排氣通路50的尺寸。 Therefore, when the annular portion 61 and the extending portion 62 are lowered, the size of the exhaust passage 50 is reduced, and the amount by which the size of the exhaust passage 50 is reduced is the amount of the length of the region of the second chamber 24 after the annular portion 61 is lowered. The working gas flows through the exhaust passage 50 formed between the carrier 30 and the extension 62. When the annular portion 61 and the extended portion 62 rise, the exhaust passage 50 is increased in accordance with the principle opposite to the above principle, and the size of the exhaust passage 50 can be adjusted without changing the shape of the chamber 20 depending on the size of the substrate 10.
此外，腔室20內壁被排氣通路調節部60覆蓋，不會直接暴露於電漿，因而可以延長更換週期，需要時，可以更換比腔室20價格低廉的排氣通路調節部60，從而在最優的工作環境下對基板10進行電漿處理。 Further, the inner wall of the chamber 20 is covered by the exhaust passage adjusting portion 60, and is not directly exposed to the plasma, so that the replacement cycle can be extended, and if necessary, the exhaust passage adjusting portion 60 which is cheaper than the chamber 20 can be replaced, thereby The substrate 10 is plasma treated in an optimal working environment.
如圖3所示，排氣通路調節部60還包括位於載盤30的上部，內部形成為中空，且一側結合於腔室20的內部的引導部64。 As shown in FIG. 3, the exhaust passage adjusting portion 60 further includes a guide portion 64 which is located at an upper portion of the carrier 30, and is internally formed to be hollow, and one side is coupled to the inside of the chamber 20.
基板10一般位於腔室20下部，當腔室20由第一腔室22和第二腔室24形成時，通常會位於第二腔室24空間。此時，引導部64位於第二腔室24、且其下端位於基板10的上方，從而有利於集中地向基板10提供電漿。 The substrate 10 is generally located in the lower portion of the chamber 20 and is generally located in the second chamber 24 space when the chamber 20 is formed by the first chamber 22 and the second chamber 24. At this time, the guiding portion 64 is located at the second chamber 24 and its lower end is located above the substrate 10, thereby facilitating the concentrated supply of plasma to the substrate 10.
亦即，引導部64包括中空的尺寸向另一側方向逐漸變小的漏斗形狀的第一引導部64a和在第一引導部64a的另一側延伸形成且形成為中空的圓柱形狀的第二引導部64b，且較佳為第二引導部64b的內徑形成為比基板10的直徑大規定尺寸的量。 That is, the guiding portion 64 includes a funnel-shaped first guiding portion 64a whose hollow dimension gradually decreases toward the other side direction, and a second cylindrical shape formed to extend on the other side of the first guiding portion 64a and formed into a hollow cylindrical shape. The inner diameter of the guide portion 64b, and preferably the second guide portion 64b, is formed to be larger than the diameter of the substrate 10 by a predetermined size.
分散的電漿經由在第一引導部64a的另一側方向上中空的尺寸逐漸變小的漏斗形狀時向中央密集，因而具有提高基板處理的均勻性 的優點。 The dispersed plasma is densely concentrated toward the center via a funnel shape that is gradually hollowed out in the direction of the other side of the first guiding portion 64a, thereby improving uniformity of substrate processing. The advantages.
另一方面，如圖3至圖5所示，較佳為第二引導部64b和環形部61重疊。亦即，環形部61的上端位於第二引導部62b內部，環形部61在上下方向上移動而升降。 On the other hand, as shown in FIGS. 3 to 5, it is preferable that the second guiding portion 64b and the annular portion 61 overlap. That is, the upper end of the annular portion 61 is located inside the second guiding portion 62b, and the annular portion 61 moves in the up and down direction to ascend and descend.
第二引導部64b和環形部61可以以第二引導部64b的中空的直徑大於環形部61的外周面的直徑而使環形部61的上端插入第二引導部64b的形式或環形部61的中空的直徑大於第二引導部64b的外周面的直徑而使第二引導部64b的下端插入環形部61的形式重疊。 The second guiding portion 64b and the annular portion 61 may have the upper end of the annular portion 61 inserted into the form of the second guiding portion 64b or the hollow portion of the annular portion 61 with the hollow diameter of the second guiding portion 64b being larger than the diameter of the outer peripheral surface of the annular portion 61. The diameter of the second guide portion 64b is larger than the diameter of the outer peripheral surface of the second guide portion 64b so that the lower end of the second guide portion 64b is inserted into the annular portion 61.
第二引導部64b被固定，環形部61升降而調節排氣通路50的尺寸。 The second guiding portion 64b is fixed, and the annular portion 61 is raised and lowered to adjust the size of the exhaust passage 50.
此時，第二引導部62b與環形部61之間可以接觸，但為了環形部61的升降，較佳為彼此隔開。 At this time, the second guiding portion 62b and the annular portion 61 may be in contact with each other, but it is preferable to separate the annular portions 61 from each other.
如圖6所示，延伸部62可以是以環形部61為中心延伸的中空的圓盤形狀或以環形部61為中心延伸的具有長度的板材形狀。 As shown in FIG. 6, the extending portion 62 may have a hollow disc shape extending around the annular portion 61 or a plate shape having a length extending around the annular portion 61.
當延伸部62為圓盤形狀時，覆蓋腔室20，因而具有將副產物施加於腔室20的影響減少到最低程度的優點；當延伸部62為板材形狀時，具有將升降時副產物懸浮減少到最低程度的優點，因而較佳為根據工作環境選擇。 When the extension portion 62 is in the shape of a disk, it covers the chamber 20, and thus has the advantage of minimizing the effect of applying by-products to the chamber 20; when the extension portion 62 is in the shape of a sheet, it has a suspension of by-products during lifting. The advantage of being reduced to a minimum is therefore preferred depending on the working environment.
環形部61和延伸部62較佳為鋁和鋁合金的等輕金屬材質。尤其，由鋁構成的環形部61和延伸部62具有重量輕、耐蝕性優異的優點。 The annular portion 61 and the extending portion 62 are preferably made of a light metal such as aluminum or aluminum alloy. In particular, the annular portion 61 and the extended portion 62 made of aluminum have the advantages of light weight and excellent corrosion resistance.
如圖7至圖8所示，延伸部62可以在中心沿外側方向形成有由兩個以上的孔或狹縫形成的貫通部H。 As shown in FIGS. 7 to 8, the extending portion 62 may have a penetration portion H formed of two or more holes or slits in the outer direction in the center.
此時，貫通部H由兩個以上的孔構成時，較佳為從中心向外側方向直線延伸的假想的線形成有多個孔。 In this case, when the penetration portion H is composed of two or more holes, it is preferable that a plurality of holes are formed in a virtual line extending linearly from the center toward the outside.
此外，如圖7所示，當延伸部62形成為圓形時，較佳為貫通部H在延伸部的中心沿圓周方向隔開一定角度而形成多個。 Further, as shown in FIG. 7, when the extending portion 62 is formed in a circular shape, it is preferable that the through portion H is formed in plural at a predetermined angle in the circumferential direction at the center of the extending portion.
當延伸部62形成有貫通部H時，重量會變輕，且在升降和下降時發生的阻力因孔而減少，因而具有將副產物懸浮減少到最低程度的優點。 When the extending portion 62 is formed with the penetrating portion H, the weight becomes light, and the resistance generated at the time of raising and lowering is reduced by the hole, and thus there is an advantage that the by-product suspension is minimized.
另一方面，也可以在由鋁構成的延伸部62形成貫通部H。 On the other hand, the penetration portion H may be formed in the extending portion 62 made of aluminum.
較佳為在環形部61和延伸部62的表面塗覆陽極氧化膜或氧化釔膜。 It is preferable to apply an anodized film or a ruthenium oxide film to the surfaces of the annular portion 61 and the extended portion 62.
在環形部61和延伸部62的表面塗覆陽極氧化膜、氧化釔膜，將提高耐蝕性，因而具有延長更換週期的優點。 Applying an anodized film or a ruthenium oxide film to the surfaces of the annular portion 61 and the extending portion 62 improves corrosion resistance and thus has an advantage of extending the replacement period.
本發明的調節排氣通路之尺寸之電漿處理裝置的基板處理方法如下，在卡載盤30放置基板10，利用排氣通路調節部60調節排氣通路50的尺寸，並利用電漿處理基板10。 The substrate processing method of the plasma processing apparatus for adjusting the size of the exhaust passage of the present invention is as follows. The substrate 10 is placed on the card tray 30, the size of the exhaust passage 50 is adjusted by the exhaust passage adjusting portion 60, and the substrate is treated with the plasma. 10.
此時，利用電漿對基板10進行的處理可以是蝕刻或蒸鍍。 At this time, the treatment of the substrate 10 by the plasma may be etching or evaporation.
此外，根據反覆進行蝕刻和蒸鍍的波希工程(Bosch process)中的基板處理方法，在載盤放置基板10，利用排氣通路調節部60調節排氣通路50的尺寸，利用電漿對基板10進行蝕刻，利用排氣通路調節部60調節排氣通路50的尺寸，並利用電漿對基板10進行蒸鍍。 Further, according to the substrate processing method in the Bosch process in which etching and vapor deposition are repeatedly performed, the substrate 10 is placed on the carrier, and the size of the exhaust passage 50 is adjusted by the exhaust passage adjusting portion 60, and the substrate is made of plasma. 10 etching is performed, and the size of the exhaust passage 50 is adjusted by the exhaust passage adjusting portion 60, and the substrate 10 is vapor-deposited by plasma.
此時，蝕刻和蒸鍍反覆進行兩次以上，用於蝕刻的電漿可藉由對工作氣體SF6施加高頻電壓形成，用於蒸鍍的電漿可藉由對工作氣體 C4F8施加高頻電壓形成。 At this time, the etching and evaporation are repeatedly performed twice or more, and the plasma for etching can be formed by applying a high-frequency voltage to the working gas SF 6 , and the plasma for vapor deposition can be obtained by the working gas C 4 F 8 A high frequency voltage is applied to form.
儘管透過具體實施例對本發明進行了詳細說明，但這些是為具體說明本發明而進行的描述，本發明不限於上述實施例的調節排氣通路之尺寸之電漿處理裝置，顯然，本領域之通常知識者可以在本發明的技術思想範圍內對本發明實施變形或改良。 Although the present invention has been described in detail by way of specific embodiments, these are described in detail to illustrate the invention, and the invention is not limited to the plasma processing apparatus of the above-described embodiment for adjusting the size of the exhaust passage, obviously, in the art A person skilled in the art can devise or modify the invention within the scope of the technical idea of the invention.
本發明的單純變形及變更均屬於本發明的所屬領域，因而本發明的具體保護範圍將透過所附申請專利範圍變得更為清楚。 The scope of the invention is to be understood as being limited by the scope of the appended claims.
10‧‧‧基板 10‧‧‧Substrate
20‧‧‧腔室 20‧‧‧ chamber
22‧‧‧第一腔室 22‧‧‧ first chamber
24‧‧‧第二腔室 24‧‧‧Second chamber
30‧‧‧載盤 30‧‧‧Package
40‧‧‧排氣泵 40‧‧‧Exhaust pump
50‧‧‧排氣通路 50‧‧‧Exhaust passage
60‧‧‧排氣通路調節部 60‧‧‧Exhaust passage adjustment department
61‧‧‧環形部 61‧‧‧Rings
62‧‧‧延伸部 62‧‧‧Extension
63‧‧‧升降部 63‧‧‧ Lifting Department
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| KR102078364B1 (en) * | 2019-04-25 | 2020-02-17 | 주식회사 기가레인 | Discharge flow control unit and plasma processing apparatus including the same |
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| US20130087286A1 (en) * | 2011-10-05 | 2013-04-11 | Applied Materials, Inc. | Symmetric plasma process chamber |
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