CN105789006B - A kind of Height Adjustable focusing ring and its height adjusting method - Google Patents
A kind of Height Adjustable focusing ring and its height adjusting method Download PDFInfo
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- CN105789006B CN105789006B CN201410823652.5A CN201410823652A CN105789006B CN 105789006 B CN105789006 B CN 105789006B CN 201410823652 A CN201410823652 A CN 201410823652A CN 105789006 B CN105789006 B CN 105789006B
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Abstract
The invention discloses a kind of Height Adjustable focusing ring assemblies, loop configuration is set to, comprising：Dead ring, is arranged on the top of pedestal extension；Exterior focusing ring, is arranged on the top of dead ring, around the lateral wall for being set in wafer；Internal focusing ring, is arranged on the top of dead ring, and its internal diameter is less than brilliant diameter of a circle, and its external diameter is less than the internal diameter of exterior focusing ring, internal focusing ring is at least partially disposed within the edge of wafer lower surface；Elastic ring, is arranged between exterior focusing ring and the dead ring, is hollow and inflatable in elastic ring, by changing the pressure of gas in elastic ring, adjusts the height of exterior focusing ring.The invention also discloses a kind of focusing ring height adjusting method.The present invention realizes the purpose for changing plasma sheath by the longitudinal direction height of pneumatic regulation focusing ring.
Description
Technical field
The present invention relates to semiconductor processing technology field, and in particular to a kind of Height Adjustable focusing ring and its height are adjusted
Section method.
Background technology
With the extension of etching technics time, plasma etching focusing ring surface, which can also be etched, to be consumed.Focusing ring
Apparent height is reduced, and the plasma sheath above it is moved down, and silicon chip edge partial etching technique changes.It is desirable to poly-
Burnt ring can be moved in vertical direction, can be by vertically moving regulation more when it is because of etching consumption apparent height reduction
Mend apparent height.Prior art generally drives an elevating lever to realize the drive up and down to focusing ring using cylinder or motor
It is dynamic, but these mechanisms can bring many problems, it is the mechanisms such as bottom electrode that cylinder or motor, which are taken below much room, focusing ring,
It can not place, it is necessary to additionally set a space in the case where placing the pedestal of semiconductor chip, this provides for improved design and dimension
The difficulty of shield.And focusing ring be etched consumption speed it is very slow, carrying out the etching of dozens or even hundreds of hour just needs to adjust
The height of focusing ring, so the elevating mechanism utilization rate that these high costs are set is very low, loses more than gain.In addition, for reality
Now the lifting of focusing ring also may require that multiple holes for allowing elevating lever to pass through, these holes additionally set are set on pedestal
Rf electric field can be caused in the skewness of surface of semiconductor chip.It is very clean due to being needed in plasma treatment, it is impossible to
There is the generation of particulate matter, the generation particle so these elevating levers can not mutually rub with the side wall of hole, so in focusing ring from most
Lower position is namely gradually risen to during departing from dead ring by the position of lower section non-conductive ring support, the potential meeting of focusing ring
From with dead ring identical change be one by plasma in negative electrical charge the potential formed is accumulated on focusing ring, exist between the two
Huge electrical potential difference, and very little vacuum gap, the generation of this meeting guiding discharge phenomenon are only saved as between the two.Electric discharge phenomena meeting
Semiconductor chip is caused to be damaged, so strongly to be avoided in plasma treatment.These problems are all prior arts
Drive device is insurmountable, so need to design a kind of micro driving of new easy drive device realization to focusing ring,
Also it is avoided that generation electric discharge phenomena simultaneously.
The content of the invention
It is an object of the invention to provide a kind of Height Adjustable focusing ring and its height adjusting method, pass through pneumatic tune
The longitudinal direction height of focusing ring is saved, the purpose for changing plasma sheath is realized.
In order to achieve the above object, the present invention is achieved through the following technical solutions：A kind of Height Adjustable focusing ring group
Part, is set to loop configuration, in a plasma etch, and plasma etch includes a pedestal, base central
Overlying regions are supported by wafer, and pedestal periphery also includes an annular extension and surrounds the wafer, the upper surface of the extension
Less than the lower surface of the wafer, it is characterized in, the focusing ring assemblies are included：
One dead ring, is arranged on the top of the extension；
One exterior focusing ring, is arranged on the top of the dead ring, around the lateral wall for being set in the wafer,；
One internal focusing ring, is arranged on the top of the dead ring, and its internal diameter is less than the brilliant diameter of a circle, and its external diameter is less than
The internal diameter of the exterior focusing ring, makes the internal focusing ring be at least partially disposed within the edge of wafer lower surface；
Elastic ring, is arranged between the exterior focusing ring and the dead ring, to be hollow and inflatable in the elastic ring,
By changing the pressure of gas in elastic ring, the height of exterior focusing ring is adjusted.
Preferably, the material of described elastic ring is rubber.
Preferably, a stopper slot is opened up at the top of described dead ring, the elastic ring is arranged in the stopper slot.
Preferably, the material of described dead ring is ceramics.
Preferably, the pressure of gas is by setting an aerating device reality outside elastic ring in described change elastic ring
Existing.
Preferably, the pressure of gas is by setting a temperature control device reality outside elastic ring in described change elastic ring
Existing.
Preferably, the pressure of gas is by being filled outside elastic ring while setting one to inflate in described change elastic ring
Put and temperature control device realizes.
The invention also discloses a kind of focusing ring height adjusting method, it is characterized in, is entered using above-mentioned focusing ring assemblies
Row etch process, methods described is comprised the steps of：
S1, wafer to be etched is placed into above the upper surface in base central region；
S2, dead ring is arranged on pedestal periphery extension top；
S3, the top that exterior focusing ring is arranged on to dead ring, around the lateral wall for being set in the wafer；
S4, the top that internal focusing ring is arranged on to dead ring, make internal focusing ring be at least partially disposed at the side of wafer lower surface
Within edge；
S5, elastic ring is arranged between exterior focusing ring and dead ring；
S6, technique is performed etching in plasma etch；
S7, in etching technics, according to the consumption of exterior focusing ring, adjust the longitudinal direction height of the exterior focusing ring；
Wherein, it is hollow and inflatable in elastic ring, by changing the pressure of gas in elastic ring, regulation exterior focusing ring
Highly.
Preferably, the pressure of gas is by changing the aeration quantity of gas in elastic ring come real in described change elastic ring
Existing.
Preferably, the pressure of gas is realized by changing the temperature of gas in elastic ring in described change elastic ring
's.
Preferably, the pressure of gas is by while changing the aeration quantity of gas in elastic ring in described change elastic ring
And the temperature of gas is realized.
Another technical scheme of the present invention discloses a kind of Height Adjustable focusing ring assemblies, is set to ring junction
Structure, in a plasma etch, plasma etch includes a pedestal, and base central overlying regions are supported by
Wafer, pedestal periphery also includes an annular extension and surrounds the wafer, and the upper surface of the extension is less than the wafer
Lower surface, is characterized in, the focusing ring assemblies are included：
Once dead ring, is arranged on above the extension；
Dead ring on one, is arranged on the top of the lower dead ring；
One elastic ring, is arranged between the lower dead ring and the upper dead ring；
One focusing ring, is arranged on the top of the upper dead ring, and the focusing ring includes a main loop portion, surround and is set in
Within the lateral wall of the wafer, in addition to an extension, the edge for being at least partially disposed at wafer lower surface, wherein
It is hollow and inflatable in the elastic ring, by changing the pressure of gas in elastic ring, adjusts the height of focusing ring
Degree.
It is preferred that the material of described elastic ring is rubber.
It is preferred that opening up a stopper slot at the top of described lower dead ring, the elastic ring is arranged on the stopper slot
It is interior.
It is preferred that the bottom of described upper dead ring opens up a stopper slot, the elastic ring is arranged on the stopper slot
It is interior.
It is preferred that the bottom of described upper dead ring is corresponding with the top of lower dead ring to open up stopper slot, the elastic ring
It is arranged in the stopper slot.
It is preferred that the material of described upper dead ring and the material of lower dead ring are ceramics.
It is preferred that the pressure of gas is by setting an aerating device reality outside elastic ring in described change elastic ring
Existing.
It is preferred that the pressure of gas is by setting a temperature control device reality outside elastic ring in described change elastic ring
Existing.
It is preferred that in described change elastic ring the pressure of gas be by outside elastic ring set an aerating device and
What one temperature control device was realized.
The invention also discloses a kind of focusing ring height adjusting method, it is characterized in, is entered using above-mentioned focusing ring assemblies
Row etch process, methods described is comprised the steps of：
S1, wafer to be etched is placed into above the upper surface in base central region；
S2, the top that lower dead ring is arranged on to pedestal extension；
S3, the top that upper dead ring is arranged on to lower dead ring；
S4, elastic ring is arranged between lower dead ring and upper dead ring；
S5, the top that focusing ring is arranged on to upper dead ring, wherein, the main loop portion of focusing ring is around being set in wafer
Lateral wall, the extension of focusing ring is at least partially disposed within the edge of wafer lower surface；
S6, technique is performed etching in plasma etch；
S7, in etching technics, according to the consumption of focusing ring, adjust the longitudinal direction height of the focusing ring；
Wherein, it is hollow and inflatable in elastic ring, by changing the pressure of gas in elastic ring, adjusts the height of focusing ring
Degree.
It is preferred that the pressure of gas is by changing the aeration quantity of gas in elastic ring come real in described change elastic ring
Existing.
It is preferred that the pressure of gas is realized by changing the temperature of gas in elastic ring in described change elastic ring
's.
It is preferred that the pressure of gas is by while changing the aeration quantity of gas in elastic ring in described change elastic ring
And the temperature of gas is realized.
A kind of Height Adjustable focusing ring of the present invention and its height adjusting method have following excellent compared with prior art
Point：The height of focusing ring can be adjusted, and realized the purpose for changing plasma sheath, realized by the way of pneumatic, structure letter
It is single, realize simple；Focusing ring is separate type, can compensate drift of the etching technics with the time, preferably realizes etching repeatability；
By opening up stopper slot, fixed elastic ring on dead ring.
Brief description of the drawings
Fig. 1 is the overall structure diagram of focusing ring assemblies in one embodiment of the invention；
Fig. 2 is the overall structure diagram of focusing ring assemblies in another embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, by describing a preferably specific embodiment in detail, the present invention is further elaborated.
As shown in figure 1, a kind of Height Adjustable focusing ring assemblies, are set to loop configuration, positioned at a plasma etching
In chamber, plasma etch includes a pedestal 101, and the central area upper support of pedestal 101 has wafer 102, pedestal 101
Periphery also includes an annular extension and surrounds the wafer 102, and the upper surface of the extension is less than the following table of the wafer 102
Face, the focusing ring assemblies are included：One dead ring 1031, is arranged on above the extension；One exterior focusing ring 1032, is arranged on
The top of the dead ring 1031, around the lateral wall for being set in the wafer 102；One internal focusing ring 1033, is arranged on described
The top of dead ring 1031, its internal diameter is less than the diameter of the wafer 102, and its external diameter is less than the interior of the exterior focusing ring 1032
Footpath, makes the internal focusing ring 1033 be at least partially disposed within the edge of the lower surface of wafer 102, internal focusing ring 1033 is fixed not
It is dynamic, from without influenceing plasma sheath 104；Elastic ring 1034, is arranged on the exterior focusing ring 1032 and the dead ring
It is hollow and inflatable between 1031, in the elastic ring 1034, by changing the pressure of gas in elastic ring 1034, regulation is outer
The height of focusing ring 1032.Change the pressure of gas in elastic ring 1034, can be by setting one in the outside of elastic ring 1034
Individual aerating device, aerating device insufflation gas into elastic ring 1034 change pressure, so as to reach regulation exterior focusing ring 1032
The purpose of height.In one alternate embodiment by the temperature control device in an outside for being arranged on elastic ring 1034, change bullet
Property circle 1034 in gas temperature, so as to change gas pressure, so as to reach the purpose of the height of regulation exterior focusing ring 1032.
Aerating device and temperature control device can be set simultaneously in another alternative embodiment of the invention, to reach the mesh for changing gas pressure
's.Aerating device of the present invention can be the pipeline of any arrangement, as long as can with the space gases UNICOM in elastic ring
With, such pipeline can arbitrarily devised pipeline as needed, cause Machine Design and the difficult space of later maintenance around meeting, and
And the interference to plasma distribution above pedestal can be reduced.
In the preferred embodiment, the material selection ceramics of dead ring 1031, the material selection of elastic ring 1034
Rubber.For more preferable fixed elastic ring 1034, a stopper slot is opened up at the top of dead ring 1031, elastic ring 1034 is set
Put in the stopper slot.
In order to preferably describe the operation principle for focusing on ring assemblies, explained in detail by a kind of focusing ring height adjusting method
State, methods described is comprised the steps of：
S1, wafer 102 to be etched is placed into above the upper surface of the central area of pedestal 101；
S2, dead ring 1031 is arranged on above the extension of the periphery of pedestal 101；
S3, the top that exterior focusing ring 1032 is arranged on to dead ring 1031, around the outside for being set in the wafer 102
Wall；
S4, the top that internal focusing ring 1033 is arranged on to dead ring 1031, make internal focusing ring 1033 be at least partially disposed at crystalline substance
Within the edge of 102 lower surfaces of circle；
S5, elastic ring 1034 is arranged between exterior focusing ring 1032 and dead ring 1031；
S6, technique is performed etching in plasma etch；
S7, in etching technics, according to the consumption of exterior focusing ring 1032, the longitudinal direction for adjusting the exterior focusing ring 1032 is high
Degree, so as to realize the purpose for changing plasma sheath 104；
Wherein, it is hollow and inflatable in elastic ring 1034, by changing the pressure of gas in elastic ring 1034, regulation is outer
The height of focusing ring 1032.The pressure of gas is by changing gas in elastic ring 1034 in described change elastic ring 1034
Aeration quantity and/or change the temperature of gas in elastic ring 1034 and realize.
As shown in Figure 2 in another embodiment of the present invention, it is contemplated that if gap between focusing ring and dead ring
Occur, potential difference may cause other problemses therebetween.Therefore dead ring can be separated into two-piece, elastic ring is positioned in it
In.
A kind of Height Adjustable focusing ring assemblies, are set to loop configuration, in a plasma etch, plasma
Body etched cavity includes a pedestal 201, and the central area upper support of pedestal 201 has wafer 202, and the periphery of pedestal 201 also includes
One annular extension surrounds the wafer 202, and the upper surface of the extension is less than the lower surface of the wafer 202, described poly-
Burnt ring assemblies are included：Once dead ring 2031, are arranged on above the extension；Dead ring 2032 on one, be arranged on it is described under
The top of dead ring 2031；One elastic ring 2033, is arranged between the lower dead ring 2031 and the upper dead ring 2032；One
Focusing ring, is arranged on the top of the upper dead ring 2032, and the focusing ring includes a main loop portion 2034, surround and is set in institute
The lateral wall of wafer 202 is stated, the focusing ring also includes an extension 2035, is at least partially disposed at the lower surface of wafer 202
Within edge, plasma sheath 204 is not influenceed；Wherein, it is hollow and inflatable in the elastic ring 2033, by changing bullet
Property circle 2033 in gas pressure, adjust focusing ring height.Change the pressure of gas in elastic ring 2033, can be by bullet
Property circle 2033 outside set an aerating device, aerating device insufflation gas into elastic ring 2033, change pressure, so as to reach
To the purpose of the height of regulation focusing ring.Pass through the temperature in an outside for being arranged on elastic ring 2033 in one alternate embodiment
Device is controlled, changes the temperature of gas in elastic ring 2033, so that change gas pressure, so that reach the height of regulation focusing ring
Purpose.Aerating device and temperature control device can be set simultaneously in another alternative embodiment of the invention, to reach change gas
The purpose of pressure.Because upper dead ring 2032, lower dead ring 2031 are all made up of insulating materials, preferably by ceramics, institute
So that before and after focusing ring lifting, the potential of focusing ring and the assembly of upper dead ring 2032 remains constant, so can keep away
Exempt from the generation of electric discharge phenomena.
Aerating device of the present invention can be the pipeline of any arrangement, as long as can be with the space gases in elastic ring 2033
UNICOM just can be with, such pipeline can arbitrarily devised pipeline as needed, cause Machine Design and later maintenance difficult around meeting
Space, and the interference to plasma distribution above pedestal can be reduced.
The material of elastic ring 2033 of the present invention is preferably fluorubber, and preferably FFKM can so resist plasma
Corrosive etching gas in body etched cavity, the corrosion of such as fluorocarbons.Due to elastic ring 2033 in upward expansion and downwards
Will not occur mechanical friction so would not also produce particle contamination with peripheral parts in contraction process.Elastic ring 2033 can simultaneously
In outer surface or inner surface of pipeline coating conductive coating, can so reduce focusing ring and climb away the upper dead ring in lower section
Electrical potential difference after 2032 between the two, it is to avoid electric discharge（arcing）Phenomenon is produced.
For more preferable fixed elastic ring 2033, a stopper slot is opened up at the top of lower dead ring 2031, by elastic ring
2033 are arranged in the stopper slot.In one alternate embodiment, a stopper slot is opened up in the bottom of upper dead ring 2032,
Elastic ring 2033 is arranged in the stopper slot., can be simultaneously at the bottom of upper dead ring 2032 in another alternative embodiment
Portion is corresponding with the top of lower dead ring 2031 to open up stopper slot, and elastic ring 2033 is arranged in the stopper slot.
In order to preferably describe the operation principle for focusing on ring assemblies, explained in detail by a kind of focusing ring height adjusting method
State, methods described is comprised the steps of：
S1, wafer 202 to be etched is placed into above the upper surface of the central area of pedestal 201；
S2, the top that lower dead ring 2031 is arranged on to the extension of pedestal 201；
S3, the top that upper dead ring 2032 is arranged on to lower dead ring；
S4, elastic ring 2033 is arranged between lower dead ring 2031 and upper dead ring 2032；
S5, the top that focusing ring is arranged on to upper dead ring, wherein, the main loop portion 2034 of focusing ring is around being set in crystalline substance
Round lateral wall, focuses on extension 2035 and is at least partially disposed within the edge of the lower surface of wafer 202；
S6, technique is performed etching in plasma etch；
S7, in etching technics, according to the consumption of focusing ring, the longitudinal direction height of the focusing ring is adjusted, so as to realize
Change the purpose of plasma sheath 204；
Wherein, it is hollow and inflatable in elastic ring, by changing the pressure of gas in elastic ring, adjusts the height of focusing ring
Degree.Change the pressure of gas in elastic ring 2033, can be by setting an aerating device, inflation in the outside of elastic ring 1034
Device insufflation gas into elastic ring 2033, change pressure, so as to reach the purpose of the height of regulation focusing ring.It is optional at one
By the temperature control device in an outside for being arranged on elastic ring 2033 in embodiment, change the temperature of gas in elastic ring 2033,
So as to change gas pressure, so as to reach the purpose of the height of regulation focusing ring.In another alternative embodiment of the invention
Aerating device and temperature control device can be set simultaneously, to reach the purpose for changing gas pressure.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (24)
1. a kind of Height Adjustable focusing ring assemblies, are set to loop configuration, in a plasma etch, plasma
Etched cavity includes a pedestal, and base central overlying regions are supported by wafer, and pedestal periphery also includes an annular extension and enclosed
Around the wafer, the upper surface of the extension is less than the lower surface of the wafer, it is characterised in that the focusing ring assemblies bag
Contain：
One dead ring, is arranged on above the extension；
One exterior focusing ring, is arranged on the top of the dead ring, around the lateral wall for being set in the wafer；
One internal focusing ring, is arranged on the top of the dead ring, and its internal diameter is less than the brilliant diameter of a circle, and its external diameter is less than described
The internal diameter of exterior focusing ring, makes the internal focusing ring be at least partially disposed within the edge of wafer lower surface；
Elastic ring, is arranged between the exterior focusing ring and the dead ring, is hollow and inflatable in the elastic ring, passes through
Change the pressure of gas in elastic ring, adjust the height of exterior focusing ring；The outer surface of elastic ring or inner surface of pipeline, which are coated with, leads
Electrocoat.
2. ring assemblies are focused on as claimed in claim 1, it is characterised in that the material of described elastic ring is rubber.
3. as claimed in claim 1 focus on ring assemblies, it is characterised in that opened up at the top of described dead ring one it is spacing
Groove, the elastic ring is arranged in the stopper slot.
4. ring assemblies are focused on as claimed in claim 1, it is characterised in that the material of described dead ring is ceramics.
5. ring assemblies are focused on as claimed in claim 1, it is characterised in that the pressure of gas is logical in described change elastic ring
Cross and set what an aerating device was realized outside elastic ring.
6. ring assemblies are focused on as claimed in claim 1, it is characterised in that the pressure of gas is logical in described change elastic ring
Cross and set what a temperature control device was realized outside elastic ring.
7. ring assemblies are focused on as claimed in claim 1, it is characterised in that the pressure of gas is logical in described change elastic ring
Cross outside elastic ring while setting what an aerating device and a temperature control device were realized.
8. a kind of focusing ring height adjusting method, it is characterised in that utilize the claims 1-7 any one claim institute
The focusing ring assemblies stated are etched technique, and methods described is comprised the steps of：
S1, wafer to be etched is placed into above the upper surface in base central region；
S2, dead ring is arranged on pedestal periphery extension top；
S3, the top that exterior focusing ring is arranged on to dead ring, around the lateral wall for being set in the wafer；
S4, the top that internal focusing ring is arranged on to dead ring, make internal focusing ring be at least partially disposed at the edge of wafer lower surface with
It is interior；
S5, elastic ring is arranged between exterior focusing ring and dead ring, the outer surface of elastic ring or inner surface of pipeline coating are conductive
Coating；
S6, technique is performed etching in plasma etch；
S7, in etching technics, according to the consumption of exterior focusing ring, adjust the longitudinal direction height of the exterior focusing ring；
Wherein, it is hollow and inflatable in elastic ring, by changing the pressure of gas in elastic ring, adjusts the height of exterior focusing ring
Degree.
9. focusing ring height adjusting method as claimed in claim 8, it is characterised in that described changes gas in elastic ring
Pressure is realized by changing the aeration quantity of gas in elastic ring.
10. focusing ring height adjusting method as claimed in claim 8, it is characterised in that gas in described change elastic ring
Pressure be to be realized by changing the temperature of gas in elastic ring.
11. focusing ring height adjusting method as claimed in claim 8, it is characterised in that gas in described change elastic ring
Pressure be by being realized while changing in elastic ring the aeration quantity of gas and the temperature of gas.
12. a kind of Height Adjustable focusing ring assemblies, are set to loop configuration, in a plasma etch, plasma
Body etched cavity includes a pedestal, and base central overlying regions are supported by wafer, and pedestal periphery also includes an annular extension
Around the wafer, the upper surface of the extension is less than the lower surface of the wafer, it is characterised in that the focusing ring assemblies
Comprising：
Once dead ring, is arranged on above the extension；
Dead ring on one, is arranged on the top of the lower dead ring；
One elastic ring, is arranged between the lower dead ring and the upper dead ring, the outer surface of elastic ring or inner surface of pipeline
It is coated with conductive coating；
One focusing ring, is arranged on the top of the upper dead ring, and the focusing ring includes a main loop portion, described around being set in
Within the lateral wall of wafer, in addition to an extension, the edge for being at least partially disposed at wafer lower surface, wherein
It is hollow and inflatable in the elastic ring, by changing the pressure of gas in elastic ring, adjusts the height of focusing ring.
13. ring assemblies are focused on as claimed in claim 12, it is characterised in that the material of described elastic ring is rubber.
14. ring assemblies are focused on as claimed in claim 12, it is characterised in that a limit is opened up at the top of described lower dead ring
Position groove, the elastic ring is arranged in the stopper slot.
15. ring assemblies are focused on as claimed in claim 12, it is characterised in that the bottom of described upper dead ring opens up a limit
Position groove, the elastic ring is arranged in the stopper slot.
16. ring assemblies are focused on as claimed in claim 12, it is characterised in that the bottom of described upper dead ring and lower dead ring
Top correspondence open up stopper slot, the elastic ring is arranged in the stopper slot.
17. ring assemblies are focused on as claimed in claim 12, it is characterised in that the material and lower dead ring of described upper dead ring
Material be ceramics.
18. ring assemblies are focused on as claimed in claim 12, it is characterised in that the pressure of gas is in described change elastic ring
By setting what an aerating device was realized outside elastic ring.
19. ring assemblies are focused on as claimed in claim 12, it is characterised in that the pressure of gas is in described change elastic ring
By setting what a temperature control device was realized outside elastic ring.
20. ring assemblies are focused on as claimed in claim 12, it is characterised in that the pressure of gas is in described change elastic ring
Realized by setting an aerating device and a temperature control device simultaneously outside elastic ring.
21. a kind of focusing ring height adjusting method, it is characterised in that will using the claims 12-20 any one right
Described focusing ring assemblies are asked to be etched technique, methods described is comprised the steps of：
S1, wafer to be etched is placed into above the upper surface in base central region；
S2, the top that lower dead ring is arranged on to pedestal extension；
S3, the top that upper dead ring is arranged on to lower dead ring；
S4, elastic ring is arranged between lower dead ring and upper dead ring, the outer surface of elastic ring or inner surface of pipeline coating are led
Electrocoat；
S5, the top that focusing ring is arranged on to upper dead ring, wherein, the main loop portion of focusing ring is around the outside for being set in wafer
Wall, the extension of focusing ring is at least partially disposed within the edge of wafer lower surface；
S6, technique is performed etching in plasma etch；
S7, in etching technics, according to the consumption of focusing ring, adjust the longitudinal direction height of the focusing ring；
Wherein, it is hollow and inflatable in elastic ring, by changing the pressure of gas in elastic ring, adjusts the height of focusing ring.
22. focusing ring height adjusting method as claimed in claim 21, it is characterised in that gas in described change elastic ring
Pressure be to be realized by changing the aeration quantity of gas in elastic ring.
23. focusing ring height adjusting method as claimed in claim 21, it is characterised in that gas in described change elastic ring
Pressure be to be realized by changing the temperature of gas in elastic ring.
24. focusing ring height adjusting method as claimed in claim 21, it is characterised in that gas in described change elastic ring
Pressure be by being realized while changing in elastic ring the aeration quantity of gas and the temperature of gas.
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